Relevant bibliographies by topics / Electron doping induced metal-insulator transition

Academic literature on the topic 'Electron doping induced metal-insulator transition'

Author: Grafiati
Published: 10 December 2022
Last updated: 29 January 2023

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Journal articles on the topic "Electron doping induced metal-insulator transition"

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FARKAŠOVSKÝ, PAVOL, and HANA ČENČARIKOVÁ. "VALENCE AND METAL-INSULATOR TRANSITIONS IN THE SPINLESS FALICOV–KIMBALL MODEL INDUCED BY DOPING." International Journal of Modern Physics B 19, no. 23 (September 20, 2005): 3603–12. http://dx.doi.org/10.1142/s0217979205032395.

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The influence of doping on valence and metal-insulator transitions in the spinless Falicov–Kimball model is studied by the well-controlled numerical method. Two types of doping are examined, and namely, the substitution of rare-earth ions by non-magnetic ions that introduce (i) one or (ii) no additional electron (per non-magnetic ion) into the conduction band. It is found that the first type of substitution increases the average f-state occupancy of rare-earth ions, whereas the second type of substitution has the opposite effect. In both cases valence changes are accompanied by a doping induced insulator-metal transition. The results obtained are used to describe valence and metal-insulator transitions in the samarium hexaboride solid solutions.
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Bustarret, E., P. Achatz, B. Sacépé, C. Chapelier, C. Marcenat, L. Ortéga, and T. Klein. "Metal-to-insulator transition and superconductivity in boron-doped diamond." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 366, no. 1863 (November 19, 2007): 267–79. http://dx.doi.org/10.1098/rsta.2007.2151.

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The experimental discovery of superconductivity in boron-doped diamond came as a major surprise to both the diamond and the superconducting materials communities. The main experimental results obtained since then on single-crystal diamond epilayers are reviewed and applied to calculations, and some open questions are identified. The critical doping of the metal-to-insulator transition (MIT) was found to coincide with that necessary for superconductivity to occur. Some of the critical exponents of the MIT were determined and superconducting diamond was found to follow a conventional type II behaviour in the dirty limit, with relatively high critical temperature values quite close to the doping-induced insulator-to-metal transition. This could indicate that on the metallic side both the electron–phonon coupling and the screening parameter depend on the boron concentration. In our view, doped diamond is a potential model system for the study of electronic phase transitions and a stimulating example for other semiconductors such as germanium and silicon.
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Piatti, Erik, Jessica Montagna Bozzone, and Dario Daghero. "Anomalous Metallic Phase in Molybdenum Disulphide Induced via Gate-Driven Organic Ion Intercalation." Nanomaterials 12, no. 11 (May 27, 2022): 1842. http://dx.doi.org/10.3390/nano12111842.

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Transition metal dichalcogenides exhibit rich phase diagrams dominated by the interplay of superconductivity and charge density waves, which often result in anomalies in the electric transport properties. Here, we employ the ionic gating technique to realize a tunable, non-volatile organic ion intercalation in bulk single crystals of molybdenum disulphide (MoS2). We demonstrate that this gate-driven organic ion intercalation induces a strong electron doping in the system without changing the pristine 2H crystal symmetry and triggers the emergence of a re-entrant insulator-to-metal transition. We show that the gate-induced metallic state exhibits clear anomalies in the temperature dependence of the resistivity with a natural explanation as signatures of the development of a charge-density wave phase which was previously observed in alkali-intercalated MoS2. The relatively large temperature at which the anomalies are observed (∼150 K), combined with the absence of any sign of doping-induced superconductivity down to ∼3 K, suggests that the two phases might be competing with each other to determine the electronic ground state of electron-doped MoS2.
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Huang, X. Z., A. Saxena, and A. R. Bishop. "Doping induced insulator-metal transition in the platinum based MX complexes." Synthetic Metals 56, no. 2-3 (April 1993): 3438–42. http://dx.doi.org/10.1016/0379-6779(93)90141-i.

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Raveau, B., A. Maignan, and C. Martin. "Insulator–Metal Transition Induced by Cr and Co Doping in Pr0.5Ca0.5MnO3." Journal of Solid State Chemistry 130, no. 1 (April 1997): 162–66. http://dx.doi.org/10.1006/jssc.1997.7373.

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Wen, Zhiyuan, Jiaheng Li, Ziqiang Wang, Yong Xu, and Jing Zhu. "Soft-mode-phonon-mediated insulator–superconductor transition in doped two-dimensional topological insulator RuC." Applied Physics Letters 121, no. 1 (July 4, 2022): 013102. http://dx.doi.org/10.1063/5.0095044.

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Recently, the search of superconducting materials with topological states has attracted extensive interest due to their exotic properties. By using first-principles calculations, we predict that RuC monolayer is a two-dimensional topological insulator (TI) and shows a TI–superconductor transition under electron doping, leading to a superconducting transition temperature Tc of 1.4 K. Further analysis reveals that the emergence of superconductivity in RuC depends critically on the existence of flatband optical phonons as well as the appearance of multiple electron-pockets and phonon mode softening induced by doping. Moreover, we find that Li-intercalated RuC (LiRuC) is a thermal dynamically stable, superconducting material with a high Tc of 9.8 K, benefitting from the strong electron–phonon coupling. Many other superconductors with flat phonon bands are also predicted via elemental substitution in LiRuC. Our results will broaden the research interest in exploring more superconductors and modulating their physical properties through flat phonon bands.
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OVCHINNIKOV, S. G. "THE NATURE OF THE IN-GAP STATES IN WEAKLY DOPED La2−x Srx CuO4." Modern Physics Letters B 06, no. 30 (December 30, 1992): 1927–33. http://dx.doi.org/10.1142/s0217984992001630.

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A single-particle density of states is calculated in the strong electron correlation limit of the generalized multiband Hubbard model by exact diagonalization for CuO4 cluster. Several in-gap states are induced by hole doping that are mixtures of Cu d(x2−y2) and b1 O states and Cu d(z2), O a1 states and nonbonding O states. The Fermi level depends on the hole concentration nonmonotonically. The critical concentration of the insulator-metal transition of the Anderson type is estimated.
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Wang, Helin, William M. Postiglione, Vipul Chaturvedi, Evan L. Runnerstrom, Angela Cleri, Josh Nordlander, Jon-Paul Maria, and Chris Leighton. "Electrolyte-gate-driven carrier density modulation and metal–insulator transition in semiconducting epitaxial CdO films." APL Materials 10, no. 12 (December 1, 2022): 121106. http://dx.doi.org/10.1063/5.0116294.

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CdO has drawn much recent interest as a high-room-temperature-mobility oxide semiconductor with exciting potential for mid-infrared photonics and plasmonics. Wide-range modulation of carrier density in CdO is of interest both for fundamental reasons (to explore transport mechanisms in single samples) and for applications (in tunable photonic devices). Here, we thus apply ion-gel-based electrolyte gating to ultrathin epitaxial CdO(001) films, using transport, x-ray diffraction, and atomic force microscopy to deduce a reversible electrostatic gate response from −4 to +2 V, followed by rapid film degradation at higher gate voltage. Further advancing the mechanistic understanding of electrolyte gating, these observations are explained in terms of low oxygen vacancy diffusivity and high acid etchability in CdO. Most importantly, the 6-V-wide reversible electrostatic gating window is shown to enable ten-fold modulation of the Hall electron density, a striking voltage-induced metal–insulator transition, and 15-fold variation of the electron mobility. Such modulations, which are limited only by unintentional doping levels in ultrathin films, are of exceptional interest for voltage-tunable devices.
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Anggarini, Ufafa, Liang Yu, Hiroki Nagasawa, Masakoto Kanezashi, and Toshinori Tsuru. "Metal-induced microporous aminosilica creates a highly permeable gas-separation membrane." Materials Chemistry Frontiers 5, no. 7 (2021): 3029–42. http://dx.doi.org/10.1039/d1qm00009h.

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Hybrid microporous aminosilica membranes have been successfully synthesized via doping with Ag-, Cu- and Ni-into dense bis[3-(trimethoxysilyl)propyl] amine (BTPA) membranes, which creates micropores via the crosslinking between donor pairs of electrons in the amine moiety and electron acceptors in the empty “d” orbital of a transition metal.
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Li, Bowen, Liyan Xie, Zhaowu Wang, Shi Chen, Hui Ren, Yuliang Chen, Chengming Wang, Guobin Zhang, Jun Jiang, and Chongwen Zou. "Electron–Proton Co‐doping‐Induced Metal–Insulator Transition in VO 2 Film via Surface Self‐Assembled l ‐Ascorbic Acid Molecules." Angewandte Chemie International Edition 58, no. 39 (September 23, 2019): 13711–16. http://dx.doi.org/10.1002/anie.201904148.

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Dissertations / Theses on the topic "Electron doping induced metal-insulator transition"

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Lin, Geng-Li, and 林耕立. "Electron-phonon interaction induced high-temperature metal-insulator transition in few-layer MoS2." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/22075355936770273836.

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碩士
國立交通大學
電子物理系所
104
In this study, we exfoliate mechanically few-layer molybdenum disulfide (MoS2) flakes on silicon substrate capped with 300-nm thick silicon dioxide layer. The standard methods electron beam lithography and thermal evaporation were used to make a pattern of Au electrodes on MoS2 flakes. The patterned devices of MoS2 field effect transistor (FET) were then annealed in a high vacuum to reduce the contact resistance. Through electrical characterizations, we have studied the mobility and conductivity in a wide temperature range from 80 K to 600 K. The mobility of our MoS2 FET device is in the range of 5-150 cm2V-1s-1 at room temperature. In addition, their on/off ratios are of 106-108. As the temperature is lower than 200 K, the MoS2 FET devices show an insulating to metallic phase transition when the carrier concentration is increased by a positive back-gate voltage. The metal-to-insulator transition occurs at the device conductivity very close to the ideal value of e2/h. The transition could be attributed to strong electron-electron interaction in this special two dimensional material. The electron transport of MoS2, at temperatures between 80 and 200 K, is well described by the theory of two-dimensional variable range hopping, whereas that at temperatures between 250 and 350 K is well described by thermally activated transport. At zero back-gate voltage, the few-layer MoS2 exhibits a temperature behavior like semiconductor. When the temperature is higher than 450 K, the few-layer MoS2 changes its semiconducting behavior to metallic behavior. It shows another transition of an insulating to a metallic phase. In this temperature range, the resistance of few-layer MoS2 FET devices rises linearly with increasing temperature and the temperature coefficient of resistance is 0.016 K-1. This metal-to-insulator transition could be attributed to electron-phonon interaction.
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Books on the topic "Electron doping induced metal-insulator transition"

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Stafström, Sven, and Mikael Unge. Disorder-induced electron localization in molecular-based materials. Edited by A. V. Narlikar and Y. Y. Fu. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533046.013.25.

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This article examines disorder-induced electron localization in molecular-based materials, using DNA and pentacene molecular crystals as examples. In DNA, the disorder is intrinsic and strong, resulting in very short localization lengths. The pentacene crystal, on the other hand, is intrinsically homogeneous and the disorder is extrinsic and weak, which makes a metal–insulator transition (MIT) possible. After providing an overview of carbon-based materials for electronic applications, the article explains the methodology for calculating the localization properties of a DNA double strand and a pentacene molecular crystal, namely Hamiltonian, transfer matrix, and finite-size scaling. It also discusses the results, which show a substantial increase in the localization length of the electronic state with correlated disorder as compared to the case of uncorrelated disorder.
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Book chapters on the topic "Electron doping induced metal-insulator transition"

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Hemberger, J., M. Paraskevoupolos, J. Sichelschmidt, M. Brando, R. Wehn, F. Mayr, K. Pucher, et al. "Field Induced Metal-Insulator Transition in (Pr:Ca:Sr)MnO3." In Open Problems in Strongly Correlated Electron Systems, 247–52. Dordrecht: Springer Netherlands, 2001. http://dx.doi.org/10.1007/978-94-010-0771-9_25.

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Zhang, Yiming, Yuanfeng Xu, Yujie Xia, Juan Zhang, Hao Zhang, and Desheng Fu. "Photo-Induced Displacive Phase Transition in Two-dimensional MoTe2 from First-Principle Calculations." In Phase Change Materials - Technology and Applications [Working Title]. IntechOpen, 2022. http://dx.doi.org/10.5772/intechopen.108460.

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The discovery and control of new phases of matter are a central endeavor in materials research. Phase transition in two-dimensional (2D) materials has been achieved through laser irradiation, strain engineering, electrostatic doping, and controlled chemical vapor deposition growth, and laser irradiation is considered as a fast and clean technique for triggering phase transition. By using first-principles calculations, we predict that the monolayer MoTe2 exhibits a photo-induced phase transition (PIPT) from the semiconducting 2H phase to the topological 1T′ phase. The purely electronic excitations by photon soften multiple lattice vibrational modes and lead to structural symmetry breaking within sub-picosecond timescales, which is shorter than the timescale of a thermally driven phase transition, enabling a controllable phase transition by means of photons. This finding provides deep insight into the underlying physics of the phase transition in 2D transition-metal ditellurides and show an ultrafast phase-transition mechanism for manipulation of the topological properties of 2D systems. More importantly, our finding opens a new avenue to discover the new families of PIPT materials that are very limited at present but are essential to design the next generation of devices operated at ultrafast speed.
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Conference papers on the topic "Electron doping induced metal-insulator transition"

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Hishida, Tomoko, Kazusige Ohbayashi, Mario Okawa, and Tomohiko Saitoh. "Electronic Structure Evolution of La0.6Sr0.4Mn1−yNbyO3across a Metal-Insulator Transition by Nb Doping." In Proceedings of the International Conference on Strongly Correlated Electron Systems (SCES2013). Journal of the Physical Society of Japan, 2014. http://dx.doi.org/10.7566/jpscp.3.013022.

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Ali, Anzar, Jaskaran Singh, and R. K. Gopal. "Doping-induced metal to insulator transition and the thermal transport properties in germanium." In DAE SOLID STATE PHYSICS SYMPOSIUM 2018. AIP Publishing, 2019. http://dx.doi.org/10.1063/1.5113292.

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Kayama, Shuei, Shigeki Tanaka, Atsushi Miyake, Tomoko Kagayama, Katsuya Shimizu, and Fumitoshi Iga. "Pressure Induced Insulator-to-Metal Transition at 170 GPa of Kondo Semiconductor YbB12." In Proceedings of the International Conference on Strongly Correlated Electron Systems (SCES2013). Journal of the Physical Society of Japan, 2014. http://dx.doi.org/10.7566/jpscp.3.012024.

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Rini, M. "Photo-induced insulator-to-metal phase transition in nanocrystals of strongly correlated electron systems." In International Quantum Electronics Conference, 2005. IEEE, 2005. http://dx.doi.org/10.1109/iqec.2005.1560840.

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Tateiwa, Naoyuki, Yoshinori Haga, Etsuji Yamamoto, and Zachary Fisk. "Drastic Change in Ferromagnetic Ground State Associated with Pressure-Induced Metal-Insulator Transition in β-US2." In Proceedings of the International Conference on Strongly Correlated Electron Systems (SCES2013). Journal of the Physical Society of Japan, 2014. http://dx.doi.org/10.7566/jpscp.3.011086.

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Chang, Ruxia, Desong Fan, and Qiang Li. "Research on Thermal Properties of Insulator-Metal Transition at Room Temperature in Sm1-xCaxMnO3." In ASME 2019 6th International Conference on Micro/Nanoscale Heat and Mass Transfer. American Society of Mechanical Engineers, 2019. http://dx.doi.org/10.1115/mnhmt2019-3963.

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Abstract The high-purity electron-doped manganites Sm1-xCaxMnO3 nanopowder were prepared by the solid-state reaction method, then the bulk material were obtained through granulation, molding, calcining, grinding and polishing. SCMO nanoparticles with 200 nm were obtained by the sol-gal process. The phase and surface morphology of these materials were characterized by X-ray diffraction and Scanning electron microscope and other experiments. The variable resistivity of the bulk materials were measured by two-wire method in the temperature range of 100–420K. The thermal conductivity was measured by the Laser Flash method. The results show that different doping ratios can change the phase transition temperature of the metal-insulation state. The temperature changed from 0 to 50 °C. The TMI could be regulated to room temperature. When the temperature is high than the TMI, it performs as metal state, on the contrary, it performs as an insulating state.
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Zhai, Zhao-Hui, Liang-Hui Du, Si-Chao Chen, and Li-Guo Zhu. "Competing Interplay of Photo-thermal and Photo-doping Effect during Light-induced Ultrafast Insulator-to-Metal Transition in VO2 Nanofilms at Terahertz Frequency." In 2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz). IEEE, 2019. http://dx.doi.org/10.1109/irmmw-thz.2019.8874511.

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