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Journal articles on the topic 'Electron-beam lithography'

Author: Grafiati
Published: 4 June 2021
Last updated: 31 July 2024

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1

SUZUKI, KAZUAKI. "Electron Beam Lithography." Journal of the Institute of Electrical Engineers of Japan 120, no. 6 (2000): 348–51. http://dx.doi.org/10.1541/ieejjournal.120.348.

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2

Harrlott, Lloyd, and Alexander Liddle. "Electron-beam lithography." Physics World 10, no. 4 (April 1997): 41–46. http://dx.doi.org/10.1088/2058-7058/10/4/27.

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3

Tsarik, K. A. "Focused Ion Beam Exposure of Ultrathin Electron-Beam Resist for Nanoscale Field-Effect Transistor Contacts Formation." Proceedings of Universities. Electronics 26, no. 5 (2021): 353–62. http://dx.doi.org/10.24151/1561-5405-2021-26-5-353-362.

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The lithographic methods are used to form contacts for nanostructures smaller than 100 nm , in part, e-beam lithography and focused ion beam lithography with the use of electron-sensitive resist. Focused ion beam lithography is characterized by greater susceptibility to resist, high value of backward scattering, proximity effect, and best ratio of speed performance and contrast to exposed elements’ minimal size, compared to e-beam lithography. In this work, a method of ultrathin resist exposure by focused ion beam is developed. Electron-sensitive resist thickness dependence on increase of its toluene dilution was established. It was shown that electron-sensitive resist thinning down to 30 μm based on α-chloro-methacrylate with α-methylstyrene allows the 500-nm gapped metal contacts formation over a span of 30 μm. Silicon nanostructures within metallic nanoscale gap on dielectric substrate have been obtained. The geometry of obtained nanostructures was studied by optical, electron, ion, and probe microscopy. It has been established that it is possible to not use additional alignment keys when nanoscale field-effect transistors are created based on silicon nanostructures.
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4

SHIBATA, YUKINOBU. "Electron beam lithography system." Journal of the Japan Society of Precision Engineering 51, no. 12 (1985): 2190–95. http://dx.doi.org/10.2493/jjspe1933.51.2190.

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5

Chang, T. H. P., Marian Mankos, Kim Y. Lee, and Larry P. Muray. "Multiple electron-beam lithography." Microelectronic Engineering 57-58 (September 2001): 117–35. http://dx.doi.org/10.1016/s0167-9317(01)00528-7.

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6

Voznyuk G. V., Grigorenko I. N., Mitrofanov M. I., Nikolaev V. V., and Evtikhiev V. P. "Subwave textured surfaces for the radiation coupling from the waveguide." Technical Physics Letters 48, no. 3 (2022): 76. http://dx.doi.org/10.21883/tpl.2022.03.52896.19103.

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The paper presents a procedure for creating on GaAs(100) substrates textured surfaces by ion-beam etching with a focused beam. The possibility of flexibly controlling the shape and profile of the formed submicron elements of textured media is shown; this will later allow formation of textured surfaces of almost any complexity for realizing the surface radiation coupling from the waveguide. Original lithographic masks were developed, and 3D lithography was accomplished. The obtained lithographic patterns were controlled by the methods of optical, electron and atomic force microscopy. Keywords: ion-beam etching, metasurface, textured surface, lithography, surface coupling of radiation.
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7

Liu, Fan, Guo Dong Gu, Chun Hong Zeng, Hai Jun Li, Wei Wang, Bao Shun Zhang, and Jin She Yuan. "Fabrication of 50nm T-Gate on GaN Substrate." Advanced Materials Research 482-484 (February 2012): 2341–44. http://dx.doi.org/10.4028/www.scientific.net/amr.482-484.2341.

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This paper reports New advances in e-beam lithography which have made possible the fabrication of high electron mobility transistors (HEMT) on GaN substrate with gate length well in the nanometer regime. Using PMMA/PMMA-MMA Pseudo-bilayer resists technology with electron beam lithography preparation 50nm gate length T-gate. A method of in a single lithographic step and a development step, which can be applied to simplify the process and get a more narrow gate. The ratio of head to footprint of the T gate is controllable. The way meets the need of the device fabrication.
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8

SHIMAZU, Nobuo, and Haruo TSUYUZAKI. "High speed electron beam lithography." Journal of the Japan Society for Precision Engineering 53, no. 11 (1987): 1682–86. http://dx.doi.org/10.2493/jjspe.53.1682.

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9

Hohn, F. J. "Electron beam lithography: Its applications." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 7, no. 6 (November 1989): 1405. http://dx.doi.org/10.1116/1.584546.

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10

Peterson, P. A. "Low-voltage electron beam lithography." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 10, no. 6 (November 1992): 3088. http://dx.doi.org/10.1116/1.585934.

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11

Derkach, V. P., L. V. Starikova, and E. N. Levchenko. "Simulation of electron-beam lithography." Cybernetics 24, no. 4 (1989): 482–93. http://dx.doi.org/10.1007/bf01070589.

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12

Bauch, L., U. Jagdhold, and M. Böttcher. "Electron beam lithography over topography." Microelectronic Engineering 30, no. 1-4 (January 1996): 53–56. http://dx.doi.org/10.1016/0167-9317(95)00193-x.

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13

Broers, A. N., A. C. F. Hoole, and J. M. Ryan. "Electron beam lithography—Resolution limits." Microelectronic Engineering 32, no. 1-4 (September 1996): 131–42. http://dx.doi.org/10.1016/0167-9317(95)00368-1.

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14

Kwon, B., and Jong H. Kim. "Importance of Molds for Nanoimprint Lithography: Hard, Soft, and Hybrid Molds." Journal of Nanoscience 2016 (June 22, 2016): 1–12. http://dx.doi.org/10.1155/2016/6571297.

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Nanoimprint lithography has attracted considerable attention in academic and industrial fields as one of the most prominent lithographic techniques for the fabrication of the nanoscale devices. Effectively controllable shapes of fabricated elements, extremely high resolution, and cost-effectiveness of this especial lithographic system have shown unlimited potential to be utilized for practical applications. In the past decade, many different lithographic techniques have been developed such as electron beam lithography, photolithography, and nanoimprint lithography. Among them, nanoimprint lithography has proven to have not only various advantages that other lithographic techniques have but also potential to minimize the limitations of current lithographic techniques. In this review, we summarize current lithography techniques and, furthermore, investigate the nanoimprint lithography in detail in particular focusing on the types of molds. Nanoimprint lithography can be categorized into three different techniques (hard-mold, soft-mold, and hybrid nanoimprint) depending upon the molds for imprint with different advantages and disadvantages. With numerous studies and improvements, nanoimprint lithography has shown great potential which maximizes its effectiveness in patterning by minimizing its limitations. This technique will surely be the next generation lithographic technique which will open the new paradigm for the patterning and fabrication in nanoscale devices in industry.
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15

Shamsuddin, Liyana, Khairudin Mohamed, and Alsadat Rad Maryam. "The Investigation of Microstructures Fabrication on Quartz Substrate Employing Electron Beam Lithography (EBL) and ICP-RIE Process." Advanced Materials Research 980 (June 2014): 69–73. http://dx.doi.org/10.4028/www.scientific.net/amr.980.69.

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The fabrication of micro or nano-structures on quartz substrate has attracted researchers' attention and interests in recent years due to a wide range of potential applications such as NEMS/MEMS, sensors and biomedical engineering. Various types of next generation lithographic methods have been explored since optical lithography physical limitations has hindered the fabrication of high aspects ratio (HAR) structure on quartz substrates. In this research, the top-down fabrication approach was employed to fabricate microstructures on quartz substrate using Electron Beam Lithography (EBL) system, followed by the pattern transfer process using Inductively Coupled Plasma-Reactive Ion Etching (ICP-RIE) technique. The factors that influenced pattern definition include the type of electron beam (e-beam) photoresist, e-beam exposure parameter such as spot size, working distance, write field, step size, e-beam current, dosage as well as the type of developer and its developing time. The optimum conditions were investigated in achieving micro or nano-structures. Field emission scanning electron microscopy (FESEM) with energy-dispersive X-ray (EDX) and atomic force microscope (AFM) were utilized to characterize the structures profiles.
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16

Petric, Paul, Chris Bevis, Mark McCord, Allen Carroll, Alan Brodie, Upendra Ummethala, Luca Grella, Anthony Cheung, and Regina Freed. "Reflective electron beam lithography: A maskless ebeam direct write lithography approach using the reflective electron beam lithography concept." Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 28, no. 6 (November 2010): C6C6—C6C13. http://dx.doi.org/10.1116/1.3511436.

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17

WATT, F., A. A. BETTIOL, J. A. VAN KAN, E. J. TEO, and M. B. H. BREESE. "ION BEAM LITHOGRAPHY AND NANOFABRICATION: A REVIEW." International Journal of Nanoscience 04, no. 03 (June 2005): 269–86. http://dx.doi.org/10.1142/s0219581x05003139.

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To overcome the diffraction constraints of traditional optical lithography, the next generation lithographies (NGLs) will utilize any one or more of EUV (extreme ultraviolet), X-ray, electron or ion beam technologies to produce sub-100 nm features. Perhaps the most under-developed and under-rated is the utilization of ions for lithographic purposes. All three ion beam techniques, FIB (Focused Ion Beam), Proton Beam Writing (p-beam writing) and Ion Projection Lithography (IPL) have now breached the technologically difficult 100 nm barrier, and are now capable of fabricating structures at the nanoscale. FIB, p-beam writing and IPL have the flexibility and potential to become leading contenders as NGLs. The three ion beam techniques have widely different attributes, and as such have their own strengths, niche areas and application areas. The physical principles underlying ion beam interactions with materials are described, together with a comparison with other lithographic techniques (electron beam writing and EUV/X-ray lithography). IPL follows the traditional lines of lithography, utilizing large area masks through which a pattern is replicated in resist material which can be used to modify the near-surface properties. In IPL, the complete absence of diffraction effects coupled with ability to tailor the depth of ion penetration to suit the resist thickness or the depth of modification are prime characteristics of this technique, as is the ability to pattern a large area in a single brief irradiation exposure without any wet processing steps. p-beam writing and FIB are direct write (maskless) processes, which for a long time have been considered too slow for mass production. However, these two techniques may have some distinct advantages when used in combination with nanoimprinting and pattern transfer. FIB can produce master stamps in any material, and p-beam writing is ideal for producing three-dimensional high-aspect ratio metallic stamps of precise geometry. The transfer of large scale patterns using nanoimprinting represents a technique of high potential for the mass production of a new generation of high area, high density, low dimensional structures. Finally a cross section of applications are chosen to demonstrate the potential of these new generation ion beam nanolithographies.
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18

Nalivaiko, V. I., and M. A. Ponomareva. "Promising developments of chalcogenide nanoresists for optical, x-ray and electron beam lithography." Interexpo GEO-Siberia 8, no. 1 (May 18, 2022): 33–36. http://dx.doi.org/10.33764/2618-981x-2022-8-1-33-36.

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The results of application of combined systems chalcogenide layer - silver layer as nanoresists are presented. With the help of electron-beam lithography, elements of drawings with a size of 4-7 nm are obtained. These experimental results put chalcogenide combined systems among the most promising lithographic nanoresists.
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19

Berger, Luisa, Jakub Jurczyk, Katarzyna Madajska, Iwona B. Szymańska, Patrik Hoffmann, and Ivo Utke. "Room Temperature Direct Electron Beam Lithography in a Condensed Copper Carboxylate." Micromachines 12, no. 5 (May 20, 2021): 580. http://dx.doi.org/10.3390/mi12050580.

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High-resolution metallic nanostructures can be fabricated with multistep processes, such as electron beam lithography or ice lithography. The gas-assisted direct-write technique known as focused electron beam induced deposition (FEBID) is more versatile than the other candidates. However, it suffers from low throughput. This work presents the combined approach of FEBID and the above-mentioned lithography techniques: direct electron beam lithography (D-EBL). A low-volatility copper precursor is locally condensed onto a room temperature substrate and acts as a positive tone resist. A focused electron beam then directly irradiates the desired patterns, leading to local molecule dissociation. By rinsing or sublimation, the non-irradiated precursor is removed, leaving copper-containing structures. Deposits were formed with drastically enhanced growth rates than FEBID, and their composition was found to be comparable to gas-assisted FEBID structures. The influence of electron scattering within the substrate as well as implementing a post-purification protocol were studied. The latter led to the agglomeration of high-purity copper crystals. We present this as a new approach to electron beam-induced fabrication of metallic nanostructures without the need for cryogenic or hot substrates. D-EBL promises fast and easy fabrication results.
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20

Khodadad, Iman, Nathan Nelson-Fitzpatrick, Kevin Burcham, Arsen Hajian, and Simarjeet S. Saini. "Electron beam lithography using fixed beam moving stage." Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 35, no. 5 (September 2017): 051601. http://dx.doi.org/10.1116/1.4997018.

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21

Nakasuji, M., K. Kuniyoshi, T. Takigawa, and H. Wada. "Simplified variably shaped beam for electron beam lithography." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 3, no. 2 (March 1985): 424–29. http://dx.doi.org/10.1116/1.573233.

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22

Bojko, R. J. "Quantitative lithographic performance of proximity correction for electron beam lithography." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 8, no. 6 (November 1990): 1909. http://dx.doi.org/10.1116/1.585183.

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23

Potapkin, O. D., and B. V. Troshin. "Projection electron beam lithography for nanotechnology." Bulletin of the Russian Academy of Sciences: Physics 74, no. 7 (July 2010): 1015–19. http://dx.doi.org/10.3103/s1062873810070270.

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24

Hohn, Fritz J. "Electron Beam Lithography-Tools and Applications." Japanese Journal of Applied Physics 30, Part 1, No. 11B (November 30, 1991): 3088–92. http://dx.doi.org/10.1143/jjap.30.3088.

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25

Kirchner, M., and M. Kahl. "Raith - Electron Beam Lithography for Research." Acta Physica Polonica A 116, Supplement (December 2009): S—198—S—200. http://dx.doi.org/10.12693/aphyspola.116.s-198.

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26

Kotera, Masatoshi. "Precision Analysis of Electron Beam Lithography." IEEJ Transactions on Electronics, Information and Systems 126, no. 6 (2006): 683–89. http://dx.doi.org/10.1541/ieejeiss.126.683.

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27

Broers, A. N. "Resolution limits for electron-beam lithography." IBM Journal of Research and Development 32, no. 4 (July 1988): 502–13. http://dx.doi.org/10.1147/rd.324.0502.

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28

Marrian, Christie R. K. "Proximity correction for electron beam lithography." Optical Engineering 35, no. 9 (September 1, 1996): 2685. http://dx.doi.org/10.1117/1.600846.

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29

Cummings, K. D. "Charging effects from electron beam lithography." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 7, no. 6 (November 1989): 1536. http://dx.doi.org/10.1116/1.584528.

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30

Mulder, E. H. "Thermal effects in electron beam lithography." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 7, no. 6 (November 1989): 1552. http://dx.doi.org/10.1116/1.584531.

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31

Crandall, Richard, Uli Hofmann, and Richard L. Lozes. "Contrast limitations in electron-beam lithography." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 17, no. 6 (1999): 2945. http://dx.doi.org/10.1116/1.590930.

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32

Tseng, Shih Chun, Wen Yang Peng, Yi Fan Hsieh, Ping Jen Lee, and Wen Lang Lai. "Electron beam lithography on cylindrical roller." Microelectronic Engineering 87, no. 5-8 (May 2010): 943–46. http://dx.doi.org/10.1016/j.mee.2009.11.156.

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33

Liu, H., X. Zhu, E. Munro, and J. A. Rouse. "Tolerancing of electron beam lithography columns." Microelectronic Engineering 41-42 (March 1998): 163–66. http://dx.doi.org/10.1016/s0167-9317(98)00036-7.

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34

Semaltianos, N. G., K. Scott, and E. G. Wilson. "Electron beam lithography of Moiré patterns." Microelectronic Engineering 56, no. 3-4 (August 2001): 233–39. http://dx.doi.org/10.1016/s0167-9317(00)00418-4.

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35

Gourgon, C., C. Perret, and G. Micouin. "Electron beam photoresists for nanoimprint lithography." Microelectronic Engineering 61-62 (July 2002): 385–92. http://dx.doi.org/10.1016/s0167-9317(02)00429-x.

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36

Yuping, Sun, Zhu Wenzhen, Liang Junhou, Ge Huang, and Liang Jiuchun. "Irradiation damages in electron beam lithography." Journal of Electronics (China) 3, no. 1 (January 1986): 56–62. http://dx.doi.org/10.1007/bf02778895.

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37

Mølhave, Kristian, Dorte Nørgaard Madsen, and Peter Bøggild. "A simple electron-beam lithography system." Ultramicroscopy 102, no. 3 (February 2005): 215–19. http://dx.doi.org/10.1016/j.ultramic.2004.09.011.

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38

Koleva, E., K. Vutova, B. Asparuhova, I. Kostic, K. Cvetkov, and V. Gerasimov. "Modeling approaches for electron beam lithography." Journal of Physics: Conference Series 1089 (September 2018): 012016. http://dx.doi.org/10.1088/1742-6596/1089/1/012016.

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39

Thoms, Stephen, Douglas S. Macintyre, Kevin E. Docherty, and John M. R. Weaver. "Alignment verification for electron beam lithography." Microelectronic Engineering 123 (July 2014): 9–12. http://dx.doi.org/10.1016/j.mee.2014.02.005.

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40

Kim, Ho Seob, Young Chul Kim, Dae-Wook Kim, Seung Joon Ahn, Yong Jang, Hyung Woo Kim, Do Jin Seong, Kyoung Wan Park, Seong Soon Park, and Byung Jin Kim. "Low energy electron beam microcolumn lithography." Microelectronic Engineering 83, no. 4-9 (April 2006): 962–67. http://dx.doi.org/10.1016/j.mee.2006.01.099.

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41

Baylor, L. R., D. H. Lowndes, M. L. Simpson, C. E. Thomas, M. A. Guillorn, V. I. Merkulov, J. H. Whealton, E. D. Ellis, D. K. Hensley, and A. V. Melechko. "Digital electrostatic electron-beam array lithography." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 20, no. 6 (2002): 2646. http://dx.doi.org/10.1116/1.1520559.

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42

Abboud, F. "Electron beam lithography using MEBES IV." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 10, no. 6 (November 1992): 2734. http://dx.doi.org/10.1116/1.585993.

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43

Sakitani, Y. "Electron-beam cell-projection lithography system." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 10, no. 6 (November 1992): 2759. http://dx.doi.org/10.1116/1.585997.

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44

Ingino, J. "Workpiece charging in electron beam lithography." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 12, no. 3 (May 1994): 1367. http://dx.doi.org/10.1116/1.587300.

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45

Liu, W. "Resist charging in electron beam lithography." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 13, no. 5 (September 1995): 1979. http://dx.doi.org/10.1116/1.588118.

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46

Lutwyche, M. I. "The resolution of electron beam lithography." Microelectronic Engineering 17, no. 1-4 (March 1992): 17–20. http://dx.doi.org/10.1016/0167-9317(92)90006-d.

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47

Veneklasen, Lee H. "Electron beam lithography and information transfer." Microelectronic Engineering 3, no. 1-4 (December 1985): 33–42. http://dx.doi.org/10.1016/0167-9317(85)90007-3.

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48

Guang, Yao, Yong Peng, Zhengren Yan, Yizhou Liu, Junwei Zhang, Xue Zeng, Senfu Zhang, et al. "Electron Beam Lithography of Magnetic Skyrmions." Advanced Materials 32, no. 39 (August 18, 2020): 2003003. http://dx.doi.org/10.1002/adma.202003003.

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49

Craighead, H. G. "Ultra-High-Resolution electron-beam lithography." Journal of Electron Microscopy Technique 2, no. 2 (1985): 147–55. http://dx.doi.org/10.1002/jemt.1060020206.

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50

Liddle, J. Alexander, G. Patrick Watson, Steven D. Berger, and Peter D. Miller. "Proximity Effect Correction in Projection Electron Beam Lithography (Scattering with Angular Limitation Projection Electron-Beam Lithography)." Japanese Journal of Applied Physics 34, Part 1, No. 12B (December 30, 1995): 6672–78. http://dx.doi.org/10.1143/jjap.34.6672.

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