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1
Rius, Suñé Gemma. "Electron beam lithography for Nanofabrication." Doctoral thesis, Universitat Autònoma de Barcelona, 2008. http://hdl.handle.net/10803/3404.
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La litografía por haz de electrones (Electron Beam Lithography, EBL) se ha consolidado como una de las técnicas más eficaces que permiten definir motivos en el rango nanométrico. Su implantación ha permitido la nanofabricación de estructuras y dispositivos para su uso en el campo de la nanotecnología y la nanociencia.La EBL se basa en la definición de motivos submicrónicos mediante el rastreo de un haz energético de electrones sobre una resina. La naturaleza de los electrones y el desarrollo the haces extremadamente finos y su control preciso establecen la plataforma ideal para los requerimientos de la Nanofabricación. El uso de la EBL para el desarrollo de un gran número de nanoestructuras, nanodispositivos y nanosistemas ha sido, y continúa siendo, crucial para las aplicaciones de producción de máscaras, prototipaje o dispositivos discretos para la investigación fundamental. Su éxito radica en la alta resolución, flexibilidad y compatibilidad de la EBL con otros procesos de fabricación convencionales.
El objetivo de esta tesis es el avance en el conocimiento, desarrollo y aplicación de la EBL en las areas de los micro/nanosistemas y la nanoelectrónica. El presente documento refleja parte del trabajo realizado en el Laboratorio de Nanofabricación del Instituto de Microelectrónica de Barcelona IMB-CNM-CSIC durante los últimos cinco años. Debido a la falta de experiencia previa en el IMB en la utilización de la EBL, ha sido necesario el desarrollo y consolidación de una serie de procesos, lo que ha condicionado parcialmente la investigación, tal y como recoge la memoria.
Entre los aspectos relevantes compilados en esta tesis, en cuanto a innovación tecnológica, cabe destacar diversos avances en procesos tecnológicos basados en la EBL. Una nueva resina de tono negativo ha sido caracterizada y disponible para su uso en nanofabricación. La optimización de la EBL se ha llevado a cabo mediante métodos de corrección del efecto de proximidad. Se ha establecido el proceso de integración de estructuras nanomecánicas en circuitos CMOS, así como la fabricación de dispositivos basados en nanotubos de carbono. En concreto, el primer FET basado en un sólo nanotubo de carbono fabricado en España. Finalmente, la compatibilidad y viabilidad de los métodos de fabricación basados en haces de partículas se ha estudiado mediante el análisis del efecto de los haces de partículas cargadas sobre dispositivos. Por otro lado, esta memoria no sólo contiene la descripción de los principales resultados obtenidos, sinó que pretende aportar información general sobre procesos de nanofabricación basados en haces de electrones para ser utilizados en futuras investigaciones de este area.
Electron beam lithography (EBL) has consolidated as one of the most common techniques for patterning at the nanoscale meter range. It has enabled the nanofabrication of structures and devices within the research field of nanotechnology and nanoscience.
EBL is based on the definition of submicronic features by the scanning of a focused energetic beam of electrons on a resist. The nature of electrons and the development of extremely fine beams and its flexible control provide the platform to satisfy the requirements of Nanofabrication. Use of EBL for the development of a wide range of nanostructures, nanodevices and nanosystems has been, and continues to be, crucial for the applications of mask production, prototyping and discrete devices for fundamental research and it relies on its high resolution, flexibility and compatibility with other conventional fabrication processes.
The purpose of this thesis is to advance in the knowledge, development and application of electron beam lithography in the areas of micro/nano systems and nanoelectronics. In this direction, this memory reflects part of the work performed at the Nanofabrication Laboratory of the IMB-CNM. Since there was no previous experience on EBL at CNM, the need for developing a set of processes has determined partially the work.
The variety of topics that concern to nanoscience and nanotechnology is enormous. Chapter 1 briefly sintetizes nanoscale related aspects. This section aims to frame the contents of this thesis, coherently. Also for completeness, it is intended to address the specific subjects under discussion or contained in the following chapters and it is based or oriented to the experimental results that will be presented.
Chapter 2 is a general overview of the EBL technique from the point of view of the system and the physical interaction of the process. In particular, the characteristics of the SEM and specifications of the lithographic capabilities of the system that is used are presented.
In chapter 3, irradiation effect on resists is studied. The chemical behaviour of different polymeric materials is correlated with theoretical simulations for two types of resists: methacrylic based positive resists and epoxy based negative resists. The first is used for validation of the modelization and to describe the general performance of EBL on different conditions. The second covers the experiments oriented to establish the performance parameters of a new resist and comparison with another existing negative electron beam resist. Proximity effect correction concludes with the correlation of theory and experimental results for both types of resists, positive and negative.
Chapter 4 is an example of the fabrication and optimization of a micro/nanosystem for sensing at the nanoscale. In particular, nanoresonators are developed with two approaches (EBL and FIB) and enhanced response is achieved by their integration on CMOS circuitry.
Chapter 5 presents carbon nanotube (CNT) based devices that are realized and implemented for applications in nanoelectronics and sensing. First, different fabrication approaches for contacting CNTs are discussed. Then, the results of electrical characterization of the devices are presented. Finally, technology development for the use of these devices for sensing is established.
The last chapter embraces all the previous sections and pays attention to the effect of electron beam on the devices. In particular, electron induced effect is studied on nanomechanical structures integrated in circuits and CNT based devices, in order to evaluate EBL based fabrication, SEM characterization or more fundamental aspects. Advanced characterization techniques are used together with simulations, both assessing a deeper understanding of the results. Electrical measurements and AFM based techniques are used to characterise the effect of the electron irradiation by changes in their performance characteristics, charging, surface potential imaging, etc.
Main results and solved challenges are summarized in the conclusive chapter 7 that finishes with this document.
2
Yang, Yugu. "Feedback Control for Electron Beam Lithography." UKnowledge, 2012. http://uknowledge.uky.edu/ece_etds/9.
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Scanning-electron-beam lithography (SEBL) is the primary technology to generate arbitrary features at the nano-scale. However, pattern placement accuracy still remains poor compared to its resolution due to the open-loop nature of SEBL systems. Vibration, stray electromagnetic fields, deflection distortion and hysteresis, substrate charging, and other factors prevent the electron-beam from reaching its target position and one has no way to determine the actual beam position during patterning with conventional systems. To improve the pattern placement accuracy, spatial-phase-locked electron-beam lithography (SPLEBL) provides feedback control of electron-beam position by monitoring the secondary electron signal from electron-transparent fiducial grids on the substrate. While scanning the electron beam over the fiducial grids, the phase of the grid signal is analyzed to estimate the electron-beam position error; then the estimates are sent back to beam deflection system to correct the position error. In this way, closed-loop control is provided to ensure pattern placement accuracy. The implementation of spatial-phase-locking on high speed field-programmable gate array (FPGA) provides a low-cost method to create a nano-manufacturing platform with 1 nm precision and significantly improved throughput.
Shot-to-shot, or pixel-to-pixel, dose variation during EBL is a significant practical and fundamental problem. Dose variations associated with charging, electron source instability, optical system drift, and ultimately shot noise in the beam itself conspire to increase critical dimension variability and line width roughness and to limit the throughput. It would be an important improvement to e-beam patterning technology if real-time feedback control of electron-dose were provided to improve pattern quality and throughput even beyond the shot noise limit. A novel approach is proposed in this document to achieve the real-time dose control based on the measurement of electron arrival at the sample to be patterned, rather than from the source or another point in the electron-optical system. A dose control algorithm, implementation on FPGA, and initial experiment results for the real-time feedback dose control on the e-beam patterning tool is also presented.
3
Leonard, S. "Negative polymeric resists for electron beam lithography." Thesis, University of Liverpool, 1987. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.234905.
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Ferrera, Juan (Ferrera Uranga). "Nanometer-scale placement in electron-beam lithography." Thesis, Massachusetts Institute of Technology, 2000. http://hdl.handle.net/1721.1/9117.
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Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2000.Includes bibliographical references (p. 259-268).
Electron-beam lithography is capable of high-resolution lithographic pattern generation (down to 10 nm or below). However, for conventional e-beam lithography, pattern-placement accuracy is inferior to resolution. Despite significant efforts to improve pattern placement, a limit is being approached. The placement capability of conventional e-beam tools is insufficient to fabricate narrow-band optical filters and lasers, which require sub-micrometer-pitch gratings with a high degree of spatial coherence. Moreover, it is widely recognized that placement accuracy will not be sufficient for future semiconductor device generations, with minimum feature sizes below 100 nm. In electron-beam lithography, an electromagnetic deflection system is used in conjunction with a laser-interferometer-controlled stage to generate high-resolution patterns over large areas. Placement errors arise because the laser interferometer monitors the stage position, but the e-beam can independently drift relative to the stage. Moreover, the laser interferometer can itself drift during exposure. To overcome this fundamental limitation, the method of spatial phase-locked electron-beam lithography has been proposed. The beam position is referenced to a high-fidelity grid, exposed by interference lithography, on the substrate surface. In this method, pattern-placement performance depends upon the accuracy of the reference grid and the precision with which patterns can be locked to the grid. The grid must be well characterized to serve as a reliable fiducial. This document describes work done to characterize grids generated by interference lithography. A theoretical model was developed to describe the spatial-phase progression of interferometric gratings and grids. The accuracy of the interference lithography apparatus was found to be limited by substrate mounting errors and uncertainty in setting the geometrical parameters that determine the angle of interference. Experimental measurements were performed, which agreed well with the theoretical predictions. A segmented-grid spatial-phase locking system was implemented on a vector-scan e-beam tool to correct field placement errors, in order to fabricate high-quality Bragg reflectors for optical filters and distributed-feedback lasers. Before this work, Bragg reflectors of adequate fidelity had not been fabricated by e-beam lithography. The phase coherence of the gratings fabricated with the segmented-grid method was characterized by measuring the displacement between adjacent fields. From these measurements, field-placement errors of ~ 20 nm (mean + 3 sigma) were estimated. The segmented grid method was used to pattern Bragg gratings, which were used in the fabrication of integrated optical filters. The devices demonstrated excellent performance.
by Juan Ferrera.
Ph.D.
5
Konkola, Paul Thomas 1973. "Magnetic bearing stages for electron beam lithography." Thesis, Massachusetts Institute of Technology, 1998. http://hdl.handle.net/1721.1/9315.
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Chen, Zhong Wei. "Nanometer-scale electron beam lithography over large areas." Thesis, University of Cambridge, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.317706.
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Zhang, Feng 1973. "Real-time spatial-phase-locked electron-beam lithography." Thesis, Massachusetts Institute of Technology, 2005. http://hdl.handle.net/1721.1/34460.
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Thesis (Sc. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2005.Includes bibliographical references (p. 131-139).
The ability of electron-beam lithography (EBL) to create sub-10-nm features with arbitrary geometry makes it a critical tool in many important applications in nanoscale science and technology. The conventional EBL system is limited by its poor absolute-placement accuracy, often worse than its resolution. Spatial-phase-locked electron-Beam lithography (SPLEBL) improves the placement accuracy of EBL tools to the nanometer level by directly referencing the beam position via a global-fiducial grid placed on the substrate, and providing feedback corrections to the beam position. SPLEBL has several different modes of operation, and it can be applied to both scanning electron-beam lithography (SEBL) and variable-shaped-beam lithography. This research focuses primarily on implementing real-time SPLEBL in SEBL systems. Real-time SPLEBL consists of three major components: a fiducial-reference grid, a beam-position detection algorithm and a partial-beam blanker. Several types of fiducial grids and their fabrication processes were developed and evaluated for their signal-to-noise ratio and ease of usage. An algorithm for detecting the beam position based on Fourier techniques was implemented, and -1 nm placement accuracy achieved. Finally, various approaches to partial-beam blanking were examined, and one based on an electrostatic quadrupole lens was shown to provide the best performance.
by Feng Zhang.
Sc.D.
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Taslimi, Shahrzad. "Fabrication of diffractive optical elements by electron beam lithography." Thesis, McGill University, 2011. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=96963.
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Diffractive optical elements (DOEs) are an important component in the success of optical Microsystems. Electron beam lithography is a key part of fabricating these elements with submicron feature dimensions. This thesis presents work done on the development of a process for the fabrication of multilevel diffractive optics in glass substrates using this method. This project investigates various challenges involved in the process, addresses possible problems that may arise and proposes and investigates solutions to resolve them. Sources of possible error in the creation and transfer of the patterns are identified and methods of eliminating or minimizing these errors are presented. Some of the main sources of error arise from charging due to electron accumulation and alignment issues during electron beam lithography.Éléments d'optiques diffractives (EODs) composent une partie essentielle dans le succès de microsystèmes optiques. Lithographie à faisceau d'électrons est un élément clé pour la fabrication des structures avec des dimensions critiques submicroniques. Cette thèse présente le travail fait sur le développement d'un processus pour la fabrication des optiques diffractives en utilisant cette méthode. Ce projet étudie des divers défis impliqués dans ce processus, traite des problèmes qui pourrait surgir et propose des solutions pour les résoudre. Les sources d'erreur possible dans la création et le transfert des modèles sont identifiées et des méthodes de les éliminer ou les minimiser sont présentées. Certaines des erreurs sont attribuées à l'accumulation d'électrons et aux problèmes d'alignement lors de la lithographie.
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Docherty, Kevin Edward. "Improvements to the alignment process in electron-beam lithography." Thesis, University of Glasgow, 2010. http://theses.gla.ac.uk/1663/.
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Electron beam lithography is capable of defining structures with sub-10 nm linewidths. To exploit this capability to produce working devices with structures defined in multiple 'lithographic steps' a process of alignment must be used. The conventional method of scanning the electron beam across simple geometrically shaped markers will be shown inherently to limit the alignment accuracy attainable. Improvements to alignment allow precise placement of elements in complex multi-level devices and may be used to realise structures which are significantly smaller than the single exposure resist limit. Correlation based alignment has been used previously as an alignment technique, providing improvements to the attainable accuracy and noise immunity of alignment. It is well known that the marker pattern used in correlation based alignment has a strong influence on the magnitude of the improvements that can be realised. There has, to date, however, been no analytical study of how the design of marker pattern affects the correlation process and hence the alignment accuracy possible. This thesis analyses the correlation process to identify the features of marker patterns that are advantageous for correlation based alignment. Several classes of patterns have been investigated, with a range of metrics used to determine the suitability and performance of each type of pattern. Penrose tilings were selected on this basis as the most appropriate pattern type for use as markers in correlation based alignment. A process for performing correlation based alignment has been implemented on a commercial electron beam lithography tool and the improvements to the alignment accuracy have been demonstrated. A method of measuring alignment accuracy at the nanometer scale, based on the Fourier analysis of inter-digitated grating has been introduced. The improvements in alignment accuracy realised have been used to facilitate the fabrication of 'nanogap' and 'nanowire' devices - structures which have application in the fields of molecular electronics and quantum conduction. Fabrication procedures for such devices are demonstrated and electrical measurements of such structures presented to show that it is a feasible method of fabrication which offers much greater flexibility than the existing methods for creating these devices.
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Cheong, Lin Lee. "Low-voltage spatial-phase-locked scanning-electron-beam lithography." Thesis, Massachusetts Institute of Technology, 2010. http://hdl.handle.net/1721.1/60159.
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Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2010.Includes bibliographical references (p. 63-64).
Spatial-phase-locked electron-beam lithography (SPLEBL) is a method that tracks and corrects the position of an electron-beam in real-time by using a reference grid placed above the electron-beam resist. In this thesis, the feasibility of spatial-phase-locked lowvoltage electron-beam lithography is investigated. First, the feasibility of low-voltage electron-beam lithography (LVEBL) is experimentally verified using the resists hydrogen silsesquioxane (HSQ) and polymethyl methacrylate (PMMA). Unlike electronbeam lithography at higher voltages, LVEBL has minimal proximity effects and is not resolution-limited by these effects. The fabrication of ultra-thin photoresist grids is investigated and the secondary electron signal levels of these grids are measured.
by Lin Lee Cheong.
S.M.
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Mulder, Elvira Hendrika. "On the throughput optimization of electron beam lithography systems /." Online version, 1991. http://bibpurl.oclc.org/web/26620.
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Abargues, López Rafael. "Conducting polymers as charge dissipator layers for electron beam lithography." [S.l.] : [s.n.], 2006. http://deposit.ddb.de/cgi-bin/dokserv?idn=981465927.
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Binnie, C. E. "The fabrication of small geometry MOSFET's using electron beam lithography." Thesis, University of Glasgow, 1985. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.372399.
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Hastings, Jeffrey Todd 1975. "Nanometer-precision electron-beam lithography with applications in integrated optics." Thesis, Massachusetts Institute of Technology, 2003. http://hdl.handle.net/1721.1/29949.
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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2003.Includes bibliographical references (p. 179-185).
Scanning electron-beam lithography (SEBL) provides sub-10-nm resolution and arbitrary-pattern generation; however, SEBL's pattern-placement accuracy remains inadequate for future integrated-circuits and integrated-optical devices. Environmental disturbances, system imperfections, charging, and a variety of other factors contribute to pattern-placement inaccuracy. To overcome these limitations, spatial-phase locked electron-beam lithography (SPLEBL) monitors the beam location with respect to a reference grid on the substrate. Phase detection of the periodic grid signal provides feedback control of the beam position to within a fraction of the period. Using this technique we exposed patterns globally locked to a fiducial grid and reduced local field-stitching errors to a < 1.3 nm. Spatial-phase locking is particularly important for integrated-optical devices that require pattern-placement accuracy within a fraction of the wavelength of light. As an example, Bragg-grating based optical filters were fabricated in silicon-on-insulator waveguides using SPLEBL. The filters were designed to reflect a narrow-range of wavelengths within the communications band near 1550-nm. We patterned the devices in a single lithography step by placing the gratings in the waveguide sidewalls. This design allows apodization of the filter response by lithographically varying the grating depth. Measured transmission spectra show greatly reduced sidelobe levels for apodized devices compared to devices with uniform gratings.
by Jeffrey Todd Hastings.
Ph.D.
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Cord, Bryan M. (Bryan Michael) 1980. "Achieving sub-10-nm resolution using scanning electron beam lithography." Thesis, Massachusetts Institute of Technology, 2009. http://hdl.handle.net/1721.1/53267.
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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2009.Cataloged from PDF version of thesis.
Includes bibliographical references (p. 165-174).
Achieving the highest possible resolution using scanning-electron-beam lithography (SEBL) has become an increasingly urgent problem in recent years, as advances in various nanotechnology applications have driven demand for feature sizes well into the sub-10-nm domain. While SEBL has the highest resolution of nearly any conventional patterning technique available, reliably defining features at these length scales has been a challenge, as well as an interesting scientific problem. In this work I have investigated, both theoretically and experimentally, many of the factors that limit SEBL resolution and attempted to understand and minimize their influence on the process. This includes resist development, where we have thoroughly characterized the temperature dependence of poly(methylmethacrylate) (PMMA) resist contrast and used the results to create transferable patterns smaller than nearly any published results to date with this resist chemistry. We have also examined the process of electron-beam exposure and attempted to characterize the various factors that affect the way energy is distributed in the resist by the beam, using theoretical arguments, Monte Carlo simulations, and experimental data. We have used the results of these investigations to create some of the smallest structures reported to date, using hydrogen silsesquioxane (HSQ) resist. Finally, we have applied some of the previously-gained knowledge to the design of a unique bilayer process for patterning high-resolution metal structures using evaporation and liftoff, while simultaneously developing a broadly-useful new model for the kinetics of resist development.
by Bryan M. Cord.
Ph.D.
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Travis, David William. "High resolution electron beam lithography for exploratory silicon device fabrication." Thesis, University of Edinburgh, 1999. http://hdl.handle.net/1842/14571.
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This thesis reports on a study into the fabrication of metal oxide silicon field effect transistors using electron beam lithography to pattern features with dimensions down to 100nm and below. The study is in an area of extensive research, with devices at these dimensions of interest for future generations of integrated circuit manufacture. The design and construction of a high resolution electron beam system is reported. The system is based on a very high resolution scanning electron microscope equipped with a thermal field emission gun. Chemically amplified resist processes, for electron beam lithography, have been characterised for silicon device fabrication and sub 100nm patterns have been demonstrated. The development of a fabrication process for silicon devices, with dimensions down to 100nm, is described. The process uses electron beam lithography for all levels of patterning and electrical measurements are reported for a range of the fabricated devices. Devices fabricated in this study are used to explore a novel width modification technique using focused ion beam milling to reduce the current drive of individual transistors. The transistors are characterised before and after modification and electrical measurements are presented which provide the basis for a new chip modification strategy.
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Agrawal, Ankur. "Development and characterization of advanced electron beam resists." Thesis, Georgia Institute of Technology, 2001. http://hdl.handle.net/1853/11887.
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Ahmadi, Amir. "Wafer-scale processing of arrays of nanopore devices." Diss., Georgia Institute of Technology, 2013. http://hdl.handle.net/1853/47533.
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Nanopore-based single-molecule analysis of biomolecules such as DNA and proteins is a subject of strong scientific and technological interest. In recent years, solid state nanopores have been demonstrated to possess a number of advantages over biological (e.g., ion channel protein) pores due to the relative ease of tuning the pore dimensions, pore geometry, and surface chemistry. However, solid state fabrication methods have been limited in their scalability, automation, and reproducibility.
In this work, a wafer-scale fabrication method is first demonstrated for reproducibly fabricating large arrays of solid-state nanopores. The method couples the high-resolution processes of electron beam lithography (EBL) and atomic layer deposition (ALD). Arrays of nanopores (825 per wafer) are successfully fabricated across a series of 4' wafers, with tunable pore sizes from 50 nm to sub-20 nm. The nanopores are fabricated in silicon nitride films with thicknesses varying from 10 nm to 50 nm. ALD of aluminum oxide is used to tune the nanopore size in the above range. By careful optimization of all the processing steps, a device survival rate of 96% is achieved on a wafer with 50 nm silicon nitride films on 60- 80 micron windows. Furthermore, a significant device survival rate of 88% was obtained for 20 nm silicon nitride films on order 100 micron windows. In order to develop a deeper understanding of nanopore fabrication-structure relationships, a modeling study was conducted to examine the physics of EBL, in particular: to investigate the effects of beam blur, dose, shot pattern, and secondary electrons on internal pore structure. Under the operating conditions used in pore production, the pores were expected to taper to a substantially smaller size than their apparent size in SEM. This finding was supported by preliminary conductance readings from nanopores.
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Anbumony, Kasi Lakshman Karthi Lee Soo-Young. "Analysis and correction of three-dimensional proximity effect in binary E-beam nanolithography." Auburn, Ala., 2007. http://repo.lib.auburn.edu/2006%20Fall/Theses/ANBUMONY_KASI_19.pdf.
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Agrawal, Ankur. "Development and characterization of advanced electron beam resists." Diss., Georgia Institute of Technology, 2003. http://hdl.handle.net/1853/34054.
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Guler, Urcan. "Localized Surface Plasmons In Metal Nanoparticles Engineered By Electron Beam Lithography." Master's thesis, METU, 2009. http://etd.lib.metu.edu.tr/upload/3/12610934/index.pdf.
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In this study, optical behavior of metal nanoparticles having dimensions smaller
than the wavelength of visible light is studied experimentally and numerically.
Gold (Au) and silver (Ag) nanoparticles are studied due to their superior optical
properties when compared to other metals. A compact code based on Discrete
Dipole Approximation (DDA) is developed to compute extinction efficiencies of
nanoparticles with various different properties such as material, dimension and
geometry. To obtain self consistent nanoparticle arrays with well defined
geometries and dimensions, Electron Beam Lithography (EBL) technique is
mainly used as the manufacturing method. Dose parameters required to produce
nanoparticles with dimensions down to 50 nm over substrates with different
electrical conductivities are determined. Beam current is found to affect the doseV
size relation. The use of thin Au films as antistatic layer for e-beam patterning
over insulating substrates is considered and production steps, involving
instabilities due to contaminants introduced to the system during additional
removal steps, are clarified. 4 nm thick Au layer is found to provide sufficient
conductivity for e-beam patterning over insulating substrates. An optical setup
capable of performing transmittance and reflectance measurements of samples
having small areas patterned with EBL is designed. Sizes of the metal
nanoparticles are determined by scanning electron microscope (SEM) and spectral
data obtained using the optical setup is analyzed to find out the parameters
affecting the localized surface plasmon resonances (LSPR). Arrays of particles
with diameters between 50 &ndash200 nm are produced and optically analyzed. Size and shape of the nanoparticles are found to affect the resonance behavior. Furthermore, lattice constants of the particle arrays and surrounding medium are also shown to influence the reflectance spectra. Axes with different lengths in ellipsoidal nanoparticles are observed to cause distinguishable resonance peaks when illuminated with polarized light. Peak intensities obtained from both polarizations are observed to decrease under unpolarized illumination. Binary systems consisting of nanosized particles and holes provided better contrast for transmitted light.
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Fretwell, Tracey Ann. "Monte Carlo simulation of energy intensity distributions for electron beam lithography." Thesis, University of Manchester, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.576984.
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Fairley, Kurtis. "Development and Applications of Thin Film Resists for Electron Beam Lithography." Thesis, University of Oregon, 2016. http://hdl.handle.net/1794/19703.
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Throughout this work several thin film resists have been studied with substantial focus on HafSOx and SU-8. The study of HafSOx has granted more insight into how inorganic, spin coated films form and react under the electron beam. These films have been shown to form a thin dense crust at the surface that could have interesting implications in the interaction of the electrons. Continuing to further understand the electron interactions within the resist, low voltage patterns were created allowing the accelerating voltage to be matched to the film. With this general knowledge, higher resolution films can be constructed with shorter patterning times. Both resists complement each other in that HafSOx produces incredibly thin, dense structures to be formed with features below 10 nm in all dimensions. SU-8 allows micron thick features to be created over several millimeters. This flexibility in feature size enabled the creation of large fractals that could improve neuron binding to artificial retina down to the smallest fractals reported that are interesting for their applications as antennas. The final facet of this work involved looking at other methods of making structures. This was done through adding differing salts to organic molecules that stack into unique crystals.
This dissertation includes previously published co-authored material.
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Do, Hyung Wan. "Three-dimensional nanofabrication by electron-beam lithography and directed self-assembly." Thesis, Massachusetts Institute of Technology, 2014. http://hdl.handle.net/1721.1/93778.
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Thesis: S.M., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2014.This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
Cataloged from student-submitted PDF version of thesis.
Includes bibliographical references.
In this thesis, we investigated three-dimensional (3D) nanofabrication using electron-beam lithography (EBL), block copolymer (BCP) self-assembly, and capillary force-induced self-assembly. We first developed new processes for fabricating 3D nanostructures using a hydrogen silsesquioxane (HSQ) and poly(methylmeth-acrylate) (PMMA) bilayer resist stack. We demonstrated self-aligned mushroom-shaped posts and freestanding supported structures. Next, we used the 3D nanostructures as topographical templates guiding the self-assembly of polystyrene-b-polydimethylsiloxane (PS-b-PDMS) block copolymer thin films. We observed parallel cylinders, mesh-shaped structures, and bar-shaped structures in PDMS. Finally, we studied capillary force-induced self-assembly of linear nanostructures using a spin drying process. We developed a computation schema based on the pairwise collapse of nanostructures. We achieved propagation of information and built a proof of concept logic gate.
by Hyung Wan Do.
S.M.
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Zhang, Tao. "A low energy electron beam system and its application to lithography." Thesis, University of Cambridge, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.627249.
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Smith, Neil Ronald. "USING ELECTRON BEAM LITHOGRAPHY TO MAKE ELECTRODES FOR SINGLE MOLECULE ELECTRONICTS." Miami University / OhioLINK, 2005. http://rave.ohiolink.edu/etdc/view?acc_num=miami1123213432.
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O'Neill, Robin W. "Characterisation of micron sized ferromagnetic structures fabricated by focussed ion beam and electron beam lithography." Thesis, University of Glasgow, 2007. http://theses.gla.ac.uk/6256/.
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Traditionally electron beam lithography (EBL) has been used to fabricate micron and sub-micron sized devices, such as Γ and Τ gates for metal-semiconductor devices for study within the semiconductor industry. EBL is also used for the fabrication of ferromagnetic elements for use as components in magnetic random access memory (MRAM) and read/write heads in hard disk drives (HDD). MRAM is being investigated as a direct replacement to standard semiconductor RAM as it has lower power consumption and is a non-volatile memory solution, although the areal density, at present, is not as great. Smaller read/write heads are necessary for HDD as recent advances now allow for perpendicular magnetisation (as opposed to parallel magnetisation) of films and increase the areal density to 100 Gb/inch2, four times the current value. In this thesis, the physical and magnetic properties of such micron-sized devices that have been fabricated by focussed ion beam (FIB) lithography for comparison to those fabricated by the EBL method are discussed. In addition to this work, the physical and magnetic properties of micron-sized element that have been irradiated using the 30 keV gallium ion source are also discussed. Also in this thesis, the results of 10×10 μm2 arrays of 50 nm thick polycrystalline cobalt elements (270×270 nm2 with a 400 nm period) that are fabricated by EBL to determine if there is any magnetic superdomain structure present are discussed. Bright field imaging in a transmission electron microscope (TEM) is used to investigate the physical structure of the ferromagnets, such as the grain size, element roughness and dimensions. Additional information about the topography is measured by atomic force microscopy (AFM). The magnetic properties, such as the magnitude of the applied field at which irreversible events happen and the domain structure, are investigated by the Fresnel imaging and the differential phase contrast modes of Lorentz microscopy. A programme known as object orientated micromagnetic framework (OOMMF) is used to model the magnetic properties of such structures.
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Cybart, Shane A. "Planar Josephson junctions and arrays by electron beam lithography and ion damage." Diss., Connected to a 24 p. preview or request complete full text in PDF format. Access restricted to UC campuses, 2005. http://wwwlib.umi.com/cr/ucsd/fullcit?p3190007.
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Thesis (Ph. D.)--University of California, San Diego, 2005.Title from first page of PDF file (viewed March 8, 2006). Available via ProQuest Digital Dissertations. Vita. Includes bibliographical references (p. 108-111).
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St, Quintin Andra. "Electron beam lithography of a diffractive element for surface plasmon resonance sensing." Thesis, McGill University, 2013. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=114573.
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Surface plasmon resonance (SPR) sensing is seen as a viable option for developing biological sensors that provide portable, real-time, integrated detection systems. Certain implementations of this sensing technique have already been commercialized, but there is a continued trend to provide systems that are ever-more compact and integrated. In accordance with this trend, previous work has designed a multi-channel SPR device which relies on diffractive lenses to couple light to and from its sensing spots. This thesis presents the development of a fabrication process for these lenses using electron beam lithography, and presents optical results from a prototype device. The fabrication process is demonstrated to provide a high degree of control for pattern alignment and for the size of fabricated features. The developed method is then used to create a reflective diffractive lens on a silicon substrate. The diffraction efficiency of the lens is measured to be approximately 18%, and the focal spot size of the lens is in accordance with predictions based upon the fabricated profile.La résonance plasmonique de surface (SPR) est considérée comme une option convenable pour le développement de capteurs biologiques offrant un système de détection portatif, en temps réel et intégré. Certains instruments utilisant cette technique de détection ont déjà été commercialisés; cependant, la tendance se maintient pour le développement de systèmes qui sont encore plus compacts et intégrés. Dans cette même direction, un dispositif SPR à multiples canaux basé sur des lentilles diffractives pour focaliser la lumière vers et depuis les régions de détection a été conçu précédemment. Cette thèse présente la conception d'un procédé de fabrication pour ces lentilles utilisant la lithographie par faisceau d'électrons ainsi que les résultats optiques obtenus avec un prototype. Il est démontré que le procédé de fabrication permet un grand contrôle de l'alignement du motif et de la taille des détails. La méthode conçue est ensuite utilisée pour créer une lentille diffractive et réflective sur un substrat de silicium. L'efficacité de diffraction de la lentille est de 18% environ et la taille du faisceau au foyer est en accord avec les prédictions basées sur le profile de fabrication.
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Yasin, Shazia. "Nanotechnology using electron beam lithography and ultrasonically assisted development in organic resists." Thesis, University of Cambridge, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.275393.
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Manfrinato, Vitor Riseti. "Electron-beam lithography towards the atomic scale and applications to nano-optics." Thesis, Massachusetts Institute of Technology, 2015. http://hdl.handle.net/1721.1/101466.
Full textAbstract:
Thesis: Ph. D., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2015.This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
Cataloged from student-submitted PDF version of thesis.
Includes bibliographical references (pages 146-163).
Electron-beam lithography (EBL) is a high-resolution pattern generation technique widely used in research and development. However, EBL resolution has been limited to 4 nm isolated features and 16 nm periodic structures. Furthermore, the physical mechanisms that limit EBL resolution are not quantitatively clear. The fundamental understanding of the resolution limits of EBL is critically important to push nanotechnology toward the atomic scale. In this thesis we show a comprehensive study of the resolution limiting factors of EBL. We demonstrated that low-energy (sub-5 keV) EBL is able to achieve sub-10 nm half-pitch structures. We investigated the resolution of EBL using an aberration-corrected scanning transmission electron microscope as the exposure tool at 200 keV. We achieved isolated features with critical dimensions of 2 nm and 5 nm half-pitch in hydrogen silsesquioxane resist. We analyzed the resolution limits of this technique by measuring the lithographic point-spread function (PSF). In addition, we measured the delocalized energy transfer in EBL exposure by using chromatic aberration-corrected energy-filtered transmission electron microscopy (EFTEM) at the sub-10 nm scale. We have defined the role of spot-size, electron scattering, secondary electrons, and volume plasmons in the lithographic PSF by performing EFTEM, momentum-resolved electron energy loss spectroscopy (EELS), sub-10 nm EBL, and Monte Carlo simulations. Finally, we show two applications in nano-optics that demand sub-10 nm EBL. First, we performed lithographic placement of nanometer-sized photon sources, i.e., 5-nm-diameter colloidal quantum dots. Second, we fabricated sub-20 nm plasmonic antennas designed to engineer surface and volume plasmons in the ultraviolet region of the electromagnetic spectrum (3 to 30 eV).
by Vitor Riseti Manfrinato.
Ph. D.
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Bieber, Jay A. "Synthesis of nanostructures in single crystal silicon carbide by electron beam lithography." [Tampa, Fla.] : University of South Florida, 2004. http://purl.fcla.edu/fcla/etd/SFE0000284.
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Jeyakumar, Augustin. "Development of Inorganic Resists for Electron Beam Lithography: Novel Materials and Simulations." Diss., Available online, Georgia Institute of Technology, 2004:, 2004. http://etd.gatech.edu/theses/available/etd-06102004-100620/unrestricted/Augustin%5FJeyakumar%5Fphd%5F200405.pdf.
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Thesis (Ph. D.)--School of Chemical and Biomolecular Engineering, Georgia Institute of Technology, 2005. Directed by Clifford L. Henderson.Brent Carter, Committee Member ; Clifford L. Henderson, Committee Chair ; Dennis Hess, Committee Member ; Peter Ludovice, Committee Member ; Kevin Martin, Committee Member. Vita. Includes bibliographical references.
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Barbic, Mladen. "Characterization of patterned magnetic media prepared via nano-lithography /." Diss., Connect to a 24 p. preview or request complete full text in PDF format. Access restricted to UC IP addresses, 2000. http://wwwlib.umi.com/cr/ucsd/fullcit?p9975884.
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Rommel, Marcus [Verfasser], and Jürgen [Akademischer Betreuer] Weis. "High resolution electron beam lithography : an improved understanding of a versatile lithography technique / Marcus Rommel ; Betreuer: Jürgen Weis." Stuttgart : Universitätsbibliothek der Universität Stuttgart, 2018. http://d-nb.info/1162893567/34.
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Brown, Karl. "Coupled electron gases fabricated by in situ ion beam lithography and MBE growth." Thesis, University of Cambridge, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.319460.
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Finlayson, Mark Alan 1977. "Development of a scintillating reference grid for spatial-phase-locked electron-beam lithography." Thesis, Massachusetts Institute of Technology, 2001. http://hdl.handle.net/1721.1/16793.
Full textAbstract:
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2001.Includes bibliographical references (p. 59-61).
This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
by Mark Alan Finlayson.
S.M.
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Manfrinato, Vitor Riseti. "Sub-10-nm electron-beam lithography for templated placement of colloidal quantum dots." Thesis, Massachusetts Institute of Technology, 2011. http://hdl.handle.net/1721.1/68504.
Full textAbstract:
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2011.Cataloged from PDF version of thesis.
Includes bibliographical references (p. 53-55).
This thesis presents the investigation of resolution limits of electron-beam lithography (EBL) at the sub-10-nm scale. EBL patterning was investigated at low electron energy (2 keV) in a converted scanning electron microscope and at high electron energy (200 keV) in an aberration-corrected scanning transmission electron microscope. Sub-10-nm structures were fabricated and proximity effects were evaluated in both conditions. As an application of sub-10-nm EBL, this thesis presents a templated-self-assembly technique to control the position of individual colloidal quantum dots smaller than 10 nm.
by Vitor Riseti Manfrinato.
S.M.
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Bieber, Jay A. "Synthesis of Nanoscale Structures in Single Crystal Silicon Carbide by Electron Beam Lithography." Scholar Commons, 2004. https://scholarcommons.usf.edu/etd/960.
Full textAbstract:
Nanostructures were formed on diced specimens of several silicon carbide polytypes and silicon using electron beam lithography. A general introduction to nanostructure synthesis and electron beam lithography,are presented. A scanning electron microscope was retrofitted with a commercially available electron beam lithography package and an electrostatic beam blanker to permit nanoscale lithography to be performed.
A process was first developed and optimized on silicon substrates to expose, poly-methyl-methacrylate (PMMA) resist with an electron beam to make nanoscale nickel masks for reactive ion etching. The masks consist of an array of nickel dots that range in size from 20 to 100 nm in diameter. Several nanoscale structures were then fabricated in silicon carbide using electron beam lithography. The structures produced are characterized by field emission Scanning Electron Microscopy.
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Long, Renhai. "In-situ Scanning Electron Microscopy for Electron-beam Lithography and In-situ One Dimensional Nano Materials Characterization." ScholarWorks@UNO, 2009. http://scholarworks.uno.edu/td/966.
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In this thesis, we demonstrate in-situ scanning electron microscopy techniques for both electron beam lithography (EBL) and in-situ one dimensional nano materials electrical characterization. A precise voltage contrast image positioning for in-situ EBL to integrate nanowires into suspended structures for nanoswitch fabrication has been developed. The in-situ EBL eliminates the stage movement error and field stitching error by preventing any movements of the stage during the nanolithography process; hence, a high precision laser stage and alignment marks on the substrate are not needed, which simplifies the traditional EBL process. The ZnO piezoelectronics is also studied using nano-manipulators in scanning electron microscope. Methods to improve the contact have been demonstrated and the contacts between probe tips and the nanowires are found to have significant impact on the measurement results.
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Chen, Wei. "Nanotechnology : resolution limits and ultimate miniaturisation." Thesis, University of Cambridge, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.321025.
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Konijn, Mark. "Multilevel Nanoengineering for Imprint Lithography." Thesis, University of Canterbury. Electrical and Computer Engineering, 2005. http://hdl.handle.net/10092/1071.
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The current trend in pushing photo lithography to smaller and smaller resolutions is becoming increasingly difficult and expensive. Extreme ultra-violet lithography is an alternate method that has the potential to provide feature sizes down to 30 nm, however, it will come at an even greater cost. Nanoimprint lithography (NIL) is another lithographic technique which is promising to provide very high resolutions at a relatively low cost. Imprinting works by using a mold with a surface patterned with the required nano structures and pressing it into a substrate coated with a deformable polymer. Due to its direct pattern replication technique, it is very capable of reproducing three-dimensional structures, however limited research has been performed on this to date. In this study, investigations have been performed into developing a reliable process for creating SiN molds with sub-100 nm structures with variable height control. The process relies on a negative tone electron beam resist which can be patterned to various thicknesses by varying the exposure dosage. This allows for the creation of complex multi-layer structures in a single electron beam lithography step. These patterns then have been transferred into the SiN substrate by a single reactive ion etch. From here the mold is ready for use in imprinting. Study has also been performed into imprinting process as well. This includes the development of an imprint press, the manner in which NIL works. Investigations have been performed into the imprinting performance of 3D molds. Thermal expansion issues have been found and addressed, as have adhesion problems. Some other aspects of 3D NIL which have not been addressed in this study have been outlined in future work for further investigation.
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Tabor, Christopher Eugene. "Some optical and catalytic properties of metal nanoparticles." Diss., Atlanta, Ga. : Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/31794.
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Thesis (Ph.D)--Chemistry and Biochemistry, Georgia Institute of Technology, 2010.Committee Chair: El-Sayed, Mostafa; Committee Member: Perry, Joseph; Committee Member: Wang, Zhong; Committee Member: Whetten, Robert; Committee Member: Zhang, John. Part of the SMARTech Electronic Thesis and Dissertation Collection.
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Ferrera, Juan (Ferrera Uranga). "Highly coherent gratings for optoelectronics : an application of spatial-phase-locked electron beam lithography." Thesis, Massachusetts Institute of Technology, 1994. http://hdl.handle.net/1721.1/12030.
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Schuler, Leo Pius. "Wireless identification and sensing using surface acoustic wave devices." Thesis, University of Canterbury. Electrical Engineering, 2003. http://hdl.handle.net/10092/1081.
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Wireless Surface Acoustic Wave (SAW) devices were fabricated and tested using planar Lithium Niobate (LiNbO₃) as substrate. The working frequencies were in the 180 MHz and 360 MHz range. Using a network analyser, the devices were interrogated with a wireless range of more than 2 metres. Trials with Electron Beam Lithography (EBL) to fabricate SAW devices working in the 2450 MHz with a calculated feature size of 350 nm are discussed. Charging problems became evident as LiNbO₃ is a strong piezoelectric and pyroelectric material. Various attempts were undertaken to neutralise the charging problems. Further investigation revealed that sputtered Zinc Oxide (ZnO) is a suitable material for attaching SAW devices on irregularly shaped material. DC sputtering was used and several parameters have been optimised to achieve the desired piezoelectric effect. ZnO was sputtered using a magnetron sputtering system with a 75 mm Zn target and a DC sputter power of 250 Watts. Several trials were performed and an optimised material has been prepared under the following conditions: 9 sccm of Oxygen and 6 sccm of Argon were introduced during the process which resulted in a process pressure of 1.2x10⁻² mbar. The coatings have been characterised using Rutherford Backscattering, X-ray diffraction, SEM imaging, and Atomic force microscopy. SAW devices were fabricated and tested on 600 nm thick sputtered ZnO on a Si substrate with a working frequency of 430 MHz. The phase velocity has been calculated as 4300m/s. Non-planar samples have been coated with 500 nm of sputtered ZnO and SAW structures have been fabricated on using EBL. The design frequency is 2450 MHz, with a calculated feature size of 1 µm. The surface roughness however prevented a successful lift-off. AFM imaging confirmed a surface roughness in the order of 20 nm. Ways to improve manufacturability on these samples have been identified.
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Chen, Xiaoming. "Laser-cluster interaction and its applications in semiconductor processing /." Digital version accessible at:, 1999. http://wwwlib.umi.com/cr/utexas/main.
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Stay, Justin L. "Multi-beam-interference-based methodology for the fabrication of photonic crystal structures." Diss., Atlanta, Ga. : Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/31783.
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Thesis (Ph.D)--Electrical and Computer Engineering, Georgia Institute of Technology, 2010.Committee Chair: Thomas K. Gaylord; Committee Member: Donald D. Davis; Committee Member: Gee-Kung Chang; Committee Member: Muhannad S. Bakir; Committee Member: Phillip N. First. Part of the SMARTech Electronic Thesis and Dissertation Collection.
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Lutwyche, Mark Ian. "The use of electron beam lithography and chemical etching for the fabrication of micromechanical structures." Thesis, University of Cambridge, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.239063.
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Near, Rachel Deanne. "Theoretical and experimental investigation of the plasmonic properties of noble metal nanoparticles." Diss., Georgia Institute of Technology, 2013. http://hdl.handle.net/1853/52181.
Full textAbstract:
Noble metal nanoparticles are of great interest due to their tunable optical and radiative properties. The specific wavelength of light at which the localized surface plasmon resonance occurs is dependent upon the shape, size and composition of the particle as well as the dielectric constant of the host medium. Thus, the optical properties of noble metal nanoparticles can be systematically tuned by altering these specific parameters. The purpose of this thesis is to investigate some of these properties related to metallic nanoparticles. The first several chapters focus on theoretical modeling to predict and explain various plasmonic properties of gold and silver nanoparticles while the later chapters focus on more accurately combining experimental and theoretical methods to explain the plasmonic properties of hollow gold nanoparticles of various shapes. The appendix contains a detailed description of the theoretical methods used throughout the thesis. It is intended to serve as a guide such that a user could carry out the various types of calculations discussed in this thesis simply by reading this appendix.
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Bobadilla, Alfredo D., Leonidas E. Ocola, Anirudha V. Sumant, Michael Kaminski, and Jorge M. Seminario. "PMMA-Assisted Plasma Patterning of Graphene." Hindawi Limited, 2018. http://hdl.handle.net/10757/624681.
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Microelectronic fabrication of Si typically involves high-temperature or high-energy processes. For instance, wafer fabrication, transistor fabrication, and silicidation are all above 500°C. Contrary to that tradition, we believe low-energy processes constitute a better alternative to enable the industrial application of single-molecule devices based on 2D materials. The present work addresses the postsynthesis processing of graphene at unconventional low temperature, low energy, and low pressure in the poly methyl-methacrylate- (PMMA-) assisted transfer of graphene to oxide wafer, in the electron-beam lithography with PMMA, and in the plasma patterning of graphene with a PMMA ribbon mask. During the exposure to the oxygen plasma, unprotected areas of graphene are converted to graphene oxide. The exposure time required to produce the ribbon patterns on graphene is 2 minutes. We produce graphene ribbon patterns with ∼50 nm width and integrate them into solid state and liquid gated transistor devices.)e submitted manuscript has been created by UChicago Argonne, LLC, Operator of Argonne National Laboratory (“Argonne”). Argonne, a U.S. Department of Energy Office of Science laboratory, is operated under Contract DE-AC02-06CH11357. )e U.S. Government retains for itself, and others acting on its behalf, a paid-up nonexclusive, irrevocable worldwide license in said article to reproduce, prepare derivative works, distribute copies to the public, and perform publicly and display publicly, by or on behalf of the government. Funding text #2 )e Center for Nanoscale Materials was supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract DE-AC02-06CH11357. )e authors also acknowledge financial support from Argonne National Laboratory’s Laboratory-Directed Research and Development Strategic Initiative.
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