Relevant bibliographies by topics / Electron-beam lithography

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Electron-beam lithography'

Author: Grafiati
Published: 4 June 2021
Last updated: 31 July 2024

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Journal articles on the topic "Electron-beam lithography"

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SUZUKI, KAZUAKI. "Electron Beam Lithography." Journal of the Institute of Electrical Engineers of Japan 120, no. 6 (2000): 348–51. http://dx.doi.org/10.1541/ieejjournal.120.348.

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Harrlott, Lloyd, and Alexander Liddle. "Electron-beam lithography." Physics World 10, no. 4 (April 1997): 41–46. http://dx.doi.org/10.1088/2058-7058/10/4/27.

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Tsarik, K. A. "Focused Ion Beam Exposure of Ultrathin Electron-Beam Resist for Nanoscale Field-Effect Transistor Contacts Formation." Proceedings of Universities. Electronics 26, no. 5 (2021): 353–62. http://dx.doi.org/10.24151/1561-5405-2021-26-5-353-362.

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The lithographic methods are used to form contacts for nanostructures smaller than 100 nm , in part, e-beam lithography and focused ion beam lithography with the use of electron-sensitive resist. Focused ion beam lithography is characterized by greater susceptibility to resist, high value of backward scattering, proximity effect, and best ratio of speed performance and contrast to exposed elements’ minimal size, compared to e-beam lithography. In this work, a method of ultrathin resist exposure by focused ion beam is developed. Electron-sensitive resist thickness dependence on increase of its toluene dilution was established. It was shown that electron-sensitive resist thinning down to 30 μm based on α-chloro-methacrylate with α-methylstyrene allows the 500-nm gapped metal contacts formation over a span of 30 μm. Silicon nanostructures within metallic nanoscale gap on dielectric substrate have been obtained. The geometry of obtained nanostructures was studied by optical, electron, ion, and probe microscopy. It has been established that it is possible to not use additional alignment keys when nanoscale field-effect transistors are created based on silicon nanostructures.
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SHIBATA, YUKINOBU. "Electron beam lithography system." Journal of the Japan Society of Precision Engineering 51, no. 12 (1985): 2190–95. http://dx.doi.org/10.2493/jjspe1933.51.2190.

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Chang, T. H. P., Marian Mankos, Kim Y. Lee, and Larry P. Muray. "Multiple electron-beam lithography." Microelectronic Engineering 57-58 (September 2001): 117–35. http://dx.doi.org/10.1016/s0167-9317(01)00528-7.

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Voznyuk G. V., Grigorenko I. N., Mitrofanov M. I., Nikolaev V. V., and Evtikhiev V. P. "Subwave textured surfaces for the radiation coupling from the waveguide." Technical Physics Letters 48, no. 3 (2022): 76. http://dx.doi.org/10.21883/tpl.2022.03.52896.19103.

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The paper presents a procedure for creating on GaAs(100) substrates textured surfaces by ion-beam etching with a focused beam. The possibility of flexibly controlling the shape and profile of the formed submicron elements of textured media is shown; this will later allow formation of textured surfaces of almost any complexity for realizing the surface radiation coupling from the waveguide. Original lithographic masks were developed, and 3D lithography was accomplished. The obtained lithographic patterns were controlled by the methods of optical, electron and atomic force microscopy. Keywords: ion-beam etching, metasurface, textured surface, lithography, surface coupling of radiation.
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Liu, Fan, Guo Dong Gu, Chun Hong Zeng, Hai Jun Li, Wei Wang, Bao Shun Zhang, and Jin She Yuan. "Fabrication of 50nm T-Gate on GaN Substrate." Advanced Materials Research 482-484 (February 2012): 2341–44. http://dx.doi.org/10.4028/www.scientific.net/amr.482-484.2341.

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This paper reports New advances in e-beam lithography which have made possible the fabrication of high electron mobility transistors (HEMT) on GaN substrate with gate length well in the nanometer regime. Using PMMA/PMMA-MMA Pseudo-bilayer resists technology with electron beam lithography preparation 50nm gate length T-gate. A method of in a single lithographic step and a development step, which can be applied to simplify the process and get a more narrow gate. The ratio of head to footprint of the T gate is controllable. The way meets the need of the device fabrication.
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SHIMAZU, Nobuo, and Haruo TSUYUZAKI. "High speed electron beam lithography." Journal of the Japan Society for Precision Engineering 53, no. 11 (1987): 1682–86. http://dx.doi.org/10.2493/jjspe.53.1682.

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Hohn, F. J. "Electron beam lithography: Its applications." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 7, no. 6 (November 1989): 1405. http://dx.doi.org/10.1116/1.584546.

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Peterson, P. A. "Low-voltage electron beam lithography." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 10, no. 6 (November 1992): 3088. http://dx.doi.org/10.1116/1.585934.

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Dissertations / Theses on the topic "Electron-beam lithography"

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Rius, Suñé Gemma. "Electron beam lithography for Nanofabrication." Doctoral thesis, Universitat Autònoma de Barcelona, 2008. http://hdl.handle.net/10803/3404.

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La litografía por haz de electrones (Electron Beam Lithography, EBL) se ha consolidado como una de las técnicas más eficaces que permiten definir motivos en el rango nanométrico. Su implantación ha permitido la nanofabricación de estructuras y dispositivos para su uso en el campo de la nanotecnología y la nanociencia.
La EBL se basa en la definición de motivos submicrónicos mediante el rastreo de un haz energético de electrones sobre una resina. La naturaleza de los electrones y el desarrollo the haces extremadamente finos y su control preciso establecen la plataforma ideal para los requerimientos de la Nanofabricación. El uso de la EBL para el desarrollo de un gran número de nanoestructuras, nanodispositivos y nanosistemas ha sido, y continúa siendo, crucial para las aplicaciones de producción de máscaras, prototipaje o dispositivos discretos para la investigación fundamental. Su éxito radica en la alta resolución, flexibilidad y compatibilidad de la EBL con otros procesos de fabricación convencionales.
El objetivo de esta tesis es el avance en el conocimiento, desarrollo y aplicación de la EBL en las areas de los micro/nanosistemas y la nanoelectrónica. El presente documento refleja parte del trabajo realizado en el Laboratorio de Nanofabricación del Instituto de Microelectrónica de Barcelona IMB-CNM-CSIC durante los últimos cinco años. Debido a la falta de experiencia previa en el IMB en la utilización de la EBL, ha sido necesario el desarrollo y consolidación de una serie de procesos, lo que ha condicionado parcialmente la investigación, tal y como recoge la memoria.
Entre los aspectos relevantes compilados en esta tesis, en cuanto a innovación tecnológica, cabe destacar diversos avances en procesos tecnológicos basados en la EBL. Una nueva resina de tono negativo ha sido caracterizada y disponible para su uso en nanofabricación. La optimización de la EBL se ha llevado a cabo mediante métodos de corrección del efecto de proximidad. Se ha establecido el proceso de integración de estructuras nanomecánicas en circuitos CMOS, así como la fabricación de dispositivos basados en nanotubos de carbono. En concreto, el primer FET basado en un sólo nanotubo de carbono fabricado en España. Finalmente, la compatibilidad y viabilidad de los métodos de fabricación basados en haces de partículas se ha estudiado mediante el análisis del efecto de los haces de partículas cargadas sobre dispositivos. Por otro lado, esta memoria no sólo contiene la descripción de los principales resultados obtenidos, sinó que pretende aportar información general sobre procesos de nanofabricación basados en haces de electrones para ser utilizados en futuras investigaciones de este area.
Electron beam lithography (EBL) has consolidated as one of the most common techniques for patterning at the nanoscale meter range. It has enabled the nanofabrication of structures and devices within the research field of nanotechnology and nanoscience.
EBL is based on the definition of submicronic features by the scanning of a focused energetic beam of electrons on a resist. The nature of electrons and the development of extremely fine beams and its flexible control provide the platform to satisfy the requirements of Nanofabrication. Use of EBL for the development of a wide range of nanostructures, nanodevices and nanosystems has been, and continues to be, crucial for the applications of mask production, prototyping and discrete devices for fundamental research and it relies on its high resolution, flexibility and compatibility with other conventional fabrication processes.
The purpose of this thesis is to advance in the knowledge, development and application of electron beam lithography in the areas of micro/nano systems and nanoelectronics. In this direction, this memory reflects part of the work performed at the Nanofabrication Laboratory of the IMB-CNM. Since there was no previous experience on EBL at CNM, the need for developing a set of processes has determined partially the work.
The variety of topics that concern to nanoscience and nanotechnology is enormous. Chapter 1 briefly sintetizes nanoscale related aspects. This section aims to frame the contents of this thesis, coherently. Also for completeness, it is intended to address the specific subjects under discussion or contained in the following chapters and it is based or oriented to the experimental results that will be presented.
Chapter 2 is a general overview of the EBL technique from the point of view of the system and the physical interaction of the process. In particular, the characteristics of the SEM and specifications of the lithographic capabilities of the system that is used are presented.
In chapter 3, irradiation effect on resists is studied. The chemical behaviour of different polymeric materials is correlated with theoretical simulations for two types of resists: methacrylic based positive resists and epoxy based negative resists. The first is used for validation of the modelization and to describe the general performance of EBL on different conditions. The second covers the experiments oriented to establish the performance parameters of a new resist and comparison with another existing negative electron beam resist. Proximity effect correction concludes with the correlation of theory and experimental results for both types of resists, positive and negative.
Chapter 4 is an example of the fabrication and optimization of a micro/nanosystem for sensing at the nanoscale. In particular, nanoresonators are developed with two approaches (EBL and FIB) and enhanced response is achieved by their integration on CMOS circuitry.
Chapter 5 presents carbon nanotube (CNT) based devices that are realized and implemented for applications in nanoelectronics and sensing. First, different fabrication approaches for contacting CNTs are discussed. Then, the results of electrical characterization of the devices are presented. Finally, technology development for the use of these devices for sensing is established.
The last chapter embraces all the previous sections and pays attention to the effect of electron beam on the devices. In particular, electron induced effect is studied on nanomechanical structures integrated in circuits and CNT based devices, in order to evaluate EBL based fabrication, SEM characterization or more fundamental aspects. Advanced characterization techniques are used together with simulations, both assessing a deeper understanding of the results. Electrical measurements and AFM based techniques are used to characterise the effect of the electron irradiation by changes in their performance characteristics, charging, surface potential imaging, etc.
Main results and solved challenges are summarized in the conclusive chapter 7 that finishes with this document.
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Yang, Yugu. "Feedback Control for Electron Beam Lithography." UKnowledge, 2012. http://uknowledge.uky.edu/ece_etds/9.

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Scanning-electron-beam lithography (SEBL) is the primary technology to generate arbitrary features at the nano-scale. However, pattern placement accuracy still remains poor compared to its resolution due to the open-loop nature of SEBL systems. Vibration, stray electromagnetic fields, deflection distortion and hysteresis, substrate charging, and other factors prevent the electron-beam from reaching its target position and one has no way to determine the actual beam position during patterning with conventional systems. To improve the pattern placement accuracy, spatial-phase-locked electron-beam lithography (SPLEBL) provides feedback control of electron-beam position by monitoring the secondary electron signal from electron-transparent fiducial grids on the substrate. While scanning the electron beam over the fiducial grids, the phase of the grid signal is analyzed to estimate the electron-beam position error; then the estimates are sent back to beam deflection system to correct the position error. In this way, closed-loop control is provided to ensure pattern placement accuracy. The implementation of spatial-phase-locking on high speed field-programmable gate array (FPGA) provides a low-cost method to create a nano-manufacturing platform with 1 nm precision and significantly improved throughput. Shot-to-shot, or pixel-to-pixel, dose variation during EBL is a significant practical and fundamental problem. Dose variations associated with charging, electron source instability, optical system drift, and ultimately shot noise in the beam itself conspire to increase critical dimension variability and line width roughness and to limit the throughput. It would be an important improvement to e-beam patterning technology if real-time feedback control of electron-dose were provided to improve pattern quality and throughput even beyond the shot noise limit. A novel approach is proposed in this document to achieve the real-time dose control based on the measurement of electron arrival at the sample to be patterned, rather than from the source or another point in the electron-optical system. A dose control algorithm, implementation on FPGA, and initial experiment results for the real-time feedback dose control on the e-beam patterning tool is also presented.
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Leonard, S. "Negative polymeric resists for electron beam lithography." Thesis, University of Liverpool, 1987. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.234905.

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Ferrera, Juan (Ferrera Uranga). "Nanometer-scale placement in electron-beam lithography." Thesis, Massachusetts Institute of Technology, 2000. http://hdl.handle.net/1721.1/9117.

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Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2000.
Includes bibliographical references (p. 259-268).
Electron-beam lithography is capable of high-resolution lithographic pattern generation (down to 10 nm or below). However, for conventional e-beam lithography, pattern-placement accuracy is inferior to resolution. Despite significant efforts to improve pattern placement, a limit is being approached. The placement capability of conventional e-beam tools is insufficient to fabricate narrow-band optical filters and lasers, which require sub-micrometer-pitch gratings with a high degree of spatial coherence. Moreover, it is widely recognized that placement accuracy will not be sufficient for future semiconductor device generations, with minimum feature sizes below 100 nm. In electron-beam lithography, an electromagnetic deflection system is used in conjunction with a laser-interferometer-controlled stage to generate high-resolution patterns over large areas. Placement errors arise because the laser interferometer monitors the stage position, but the e-beam can independently drift relative to the stage. Moreover, the laser interferometer can itself drift during exposure. To overcome this fundamental limitation, the method of spatial phase-locked electron-beam lithography has been proposed. The beam position is referenced to a high-fidelity grid, exposed by interference lithography, on the substrate surface. In this method, pattern-placement performance depends upon the accuracy of the reference grid and the precision with which patterns can be locked to the grid. The grid must be well characterized to serve as a reliable fiducial. This document describes work done to characterize grids generated by interference lithography. A theoretical model was developed to describe the spatial-phase progression of interferometric gratings and grids. The accuracy of the interference lithography apparatus was found to be limited by substrate mounting errors and uncertainty in setting the geometrical parameters that determine the angle of interference. Experimental measurements were performed, which agreed well with the theoretical predictions. A segmented-grid spatial-phase locking system was implemented on a vector-scan e-beam tool to correct field placement errors, in order to fabricate high-quality Bragg reflectors for optical filters and distributed-feedback lasers. Before this work, Bragg reflectors of adequate fidelity had not been fabricated by e-beam lithography. The phase coherence of the gratings fabricated with the segmented-grid method was characterized by measuring the displacement between adjacent fields. From these measurements, field-placement errors of ~ 20 nm (mean + 3 sigma) were estimated. The segmented grid method was used to pattern Bragg gratings, which were used in the fabrication of integrated optical filters. The devices demonstrated excellent performance.
by Juan Ferrera.
Ph.D.
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Konkola, Paul Thomas 1973. "Magnetic bearing stages for electron beam lithography." Thesis, Massachusetts Institute of Technology, 1998. http://hdl.handle.net/1721.1/9315.

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Chen, Zhong Wei. "Nanometer-scale electron beam lithography over large areas." Thesis, University of Cambridge, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.317706.

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Zhang, Feng 1973. "Real-time spatial-phase-locked electron-beam lithography." Thesis, Massachusetts Institute of Technology, 2005. http://hdl.handle.net/1721.1/34460.

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Thesis (Sc. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2005.
Includes bibliographical references (p. 131-139).
The ability of electron-beam lithography (EBL) to create sub-10-nm features with arbitrary geometry makes it a critical tool in many important applications in nanoscale science and technology. The conventional EBL system is limited by its poor absolute-placement accuracy, often worse than its resolution. Spatial-phase-locked electron-Beam lithography (SPLEBL) improves the placement accuracy of EBL tools to the nanometer level by directly referencing the beam position via a global-fiducial grid placed on the substrate, and providing feedback corrections to the beam position. SPLEBL has several different modes of operation, and it can be applied to both scanning electron-beam lithography (SEBL) and variable-shaped-beam lithography. This research focuses primarily on implementing real-time SPLEBL in SEBL systems. Real-time SPLEBL consists of three major components: a fiducial-reference grid, a beam-position detection algorithm and a partial-beam blanker. Several types of fiducial grids and their fabrication processes were developed and evaluated for their signal-to-noise ratio and ease of usage. An algorithm for detecting the beam position based on Fourier techniques was implemented, and -1 nm placement accuracy achieved. Finally, various approaches to partial-beam blanking were examined, and one based on an electrostatic quadrupole lens was shown to provide the best performance.
by Feng Zhang.
Sc.D.
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Taslimi, Shahrzad. "Fabrication of diffractive optical elements by electron beam lithography." Thesis, McGill University, 2011. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=96963.

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Diffractive optical elements (DOEs) are an important component in the success of optical Microsystems. Electron beam lithography is a key part of fabricating these elements with submicron feature dimensions. This thesis presents work done on the development of a process for the fabrication of multilevel diffractive optics in glass substrates using this method. This project investigates various challenges involved in the process, addresses possible problems that may arise and proposes and investigates solutions to resolve them. Sources of possible error in the creation and transfer of the patterns are identified and methods of eliminating or minimizing these errors are presented. Some of the main sources of error arise from charging due to electron accumulation and alignment issues during electron beam lithography.
Éléments d'optiques diffractives (EODs) composent une partie essentielle dans le succès de microsystèmes optiques. Lithographie à faisceau d'électrons est un élément clé pour la fabrication des structures avec des dimensions critiques submicroniques. Cette thèse présente le travail fait sur le développement d'un processus pour la fabrication des optiques diffractives en utilisant cette méthode. Ce projet étudie des divers défis impliqués dans ce processus, traite des problèmes qui pourrait surgir et propose des solutions pour les résoudre. Les sources d'erreur possible dans la création et le transfert des modèles sont identifiées et des méthodes de les éliminer ou les minimiser sont présentées. Certaines des erreurs sont attribuées à l'accumulation d'électrons et aux problèmes d'alignement lors de la lithographie.
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Docherty, Kevin Edward. "Improvements to the alignment process in electron-beam lithography." Thesis, University of Glasgow, 2010. http://theses.gla.ac.uk/1663/.

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Electron beam lithography is capable of defining structures with sub-10 nm linewidths. To exploit this capability to produce working devices with structures defined in multiple 'lithographic steps' a process of alignment must be used. The conventional method of scanning the electron beam across simple geometrically shaped markers will be shown inherently to limit the alignment accuracy attainable. Improvements to alignment allow precise placement of elements in complex multi-level devices and may be used to realise structures which are significantly smaller than the single exposure resist limit. Correlation based alignment has been used previously as an alignment technique, providing improvements to the attainable accuracy and noise immunity of alignment. It is well known that the marker pattern used in correlation based alignment has a strong influence on the magnitude of the improvements that can be realised. There has, to date, however, been no analytical study of how the design of marker pattern affects the correlation process and hence the alignment accuracy possible. This thesis analyses the correlation process to identify the features of marker patterns that are advantageous for correlation based alignment. Several classes of patterns have been investigated, with a range of metrics used to determine the suitability and performance of each type of pattern. Penrose tilings were selected on this basis as the most appropriate pattern type for use as markers in correlation based alignment. A process for performing correlation based alignment has been implemented on a commercial electron beam lithography tool and the improvements to the alignment accuracy have been demonstrated. A method of measuring alignment accuracy at the nanometer scale, based on the Fourier analysis of inter-digitated grating has been introduced. The improvements in alignment accuracy realised have been used to facilitate the fabrication of 'nanogap' and 'nanowire' devices - structures which have application in the fields of molecular electronics and quantum conduction. Fabrication procedures for such devices are demonstrated and electrical measurements of such structures presented to show that it is a feasible method of fabrication which offers much greater flexibility than the existing methods for creating these devices.
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Cheong, Lin Lee. "Low-voltage spatial-phase-locked scanning-electron-beam lithography." Thesis, Massachusetts Institute of Technology, 2010. http://hdl.handle.net/1721.1/60159.

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Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2010.
Includes bibliographical references (p. 63-64).
Spatial-phase-locked electron-beam lithography (SPLEBL) is a method that tracks and corrects the position of an electron-beam in real-time by using a reference grid placed above the electron-beam resist. In this thesis, the feasibility of spatial-phase-locked lowvoltage electron-beam lithography is investigated. First, the feasibility of low-voltage electron-beam lithography (LVEBL) is experimentally verified using the resists hydrogen silsesquioxane (HSQ) and polymethyl methacrylate (PMMA). Unlike electronbeam lithography at higher voltages, LVEBL has minimal proximity effects and is not resolution-limited by these effects. The fabrication of ultra-thin photoresist grids is investigated and the secondary electron signal levels of these grids are measured.
by Lin Lee Cheong.
S.M.
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Books on the topic "Electron-beam lithography"

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Hahmann, Peter. Electron-beam lithography contributions from Jena. Jena: Verlag Vopelius, 2014.

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International Symposium on Electron, Ion, and Photon Beams (2nd 1984 Tarrytown, N.Y.). Proceedings of the 1984 International Symposium on Electron, Ion, and Photon Beams, 29 May-1 June, 1984, Westchester Marriott Hotel, Tarrytown, New York. Edited by Kelly J, American Vacuum Society, and American Institute of Physics. New York: Published for the American Vacuum Society by the American Institute of Physics, 1985.

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Popov, V. K. Raschet i proektirovanie ustroĭstv ėlektronnoĭ i ionnoĭ litografii. Moskva: "Radio i svi͡a︡zʹ", 1985.

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Gu, Wenqi. Dian zi shu bao guang wei na jia gong ji shu. Beijing: Beijing gong ye da xue chu ban she, 2004.

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International Symposium on Nanometer Structure Electronics (1984 Toyonaka, Osaka University). Nanometer structure electronics: An investigation of the future of micro-electronics : proceedings of the International Symposium on Nanometer Structure Electronics, April 16-18, 1984 Osaka University, Toyonaka, Japan. Tokyo, Japan: Ohm, 1985.

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Liebmann, Lars W. Design technology co-optimization in the era of sub-resolution IC scaling. Bellingham, Washington: SPIE, 2016.

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J, Resnick Douglas, and Society of Photo-optical Instrumentation Engineers., eds. Electron-beam, X-ray, and ion-beam technology: Submicrometer lithographies IX : 7-8 March 1990, San Jose, California. Bellingham, Wash., USA: SPIE--the International Society for Optical Engineering, 1990.

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D, Blais Phillip, and International Society for Hybrid Microelectronics., eds. Electron-beam, X-ray, & ion-beam techniques for submicrometer lithographies V: 11-12 March, 1986, Santa Clara, California. Bellinham, Wash., USA: SPIE--the International Society for Optical Engineering, 1986.

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1946-, Peckerar Martin Charles, and Society of Photo-optical Instrumentation Engineers., eds. Electon-beam, X-ray, and ion-beam submicrometer lithographies for manufacturing: 6-7 March 1991, San Jose, California. Bellingham, Wash: SPIE, 1991.

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O, Patterson David, Society of Photo-optical Instrumentation Engineers., and Semiconductor Equipment and Materials International., eds. Electron-beam, X-ray, and ion-beam submicrometer lithographies for manufacturing IV: 28 February-1 March 1994, San Jose, California. Bellingham, Wash: SPIE, 1994.

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Book chapters on the topic "Electron-beam lithography"

1

Constancias, Christophe, Stefan Landis, Serdar Manakli, Luc Martin, Laurent Pain, and David Rio. "Electron Beam Lithography." In Lithography, 101–82. Hoboken, NJ USA: John Wiley & Sons, Inc., 2013. http://dx.doi.org/10.1002/9781118557662.ch3.

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Hohn, Fritz J. "Electron Beam Lithography." In The Handbook of Surface Imaging and Visualization, 115–29. Boca Raton: CRC Press, 2022. http://dx.doi.org/10.1201/9780367811815-10.

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Tarui, Yasuo. "Electron Beam Lithography." In VLSI Technology, 8–120. Berlin, Heidelberg: Springer Berlin Heidelberg, 1986. http://dx.doi.org/10.1007/978-3-642-69192-8_2.

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Cui, Zheng. "Electron Beam Lithography." In Nanofabrication, 83–139. Cham: Springer International Publishing, 2024. http://dx.doi.org/10.1007/978-3-031-62546-6_3.

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Pala, Nezih, and Mustafa Karabiyik. "Electron Beam Lithography (EBL)." In Encyclopedia of Nanotechnology, 1033–57. Dordrecht: Springer Netherlands, 2016. http://dx.doi.org/10.1007/978-94-017-9780-1_344.

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Auffan, Mélanie, Catherine Santaella, Alain Thiéry, Christine Paillès, Jérôme Rose, Wafa Achouak, Antoine Thill, et al. "Electron Beam Lithography (EBL)." In Encyclopedia of Nanotechnology, 718–40. Dordrecht: Springer Netherlands, 2012. http://dx.doi.org/10.1007/978-90-481-9751-4_344.

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Bohlen, Harald, and Werner Kulcke. "Micropositioning for Submicron Electron Beam Lithography." In Progress in Precision Engineering, 174–85. Berlin, Heidelberg: Springer Berlin Heidelberg, 1991. http://dx.doi.org/10.1007/978-3-642-84494-2_18.

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Friedman, Avner. "Mathematical problems in electron beam lithography." In The IMA Volumes in Mathematics and Its Applications, 79–87. New York, NY: Springer New York, 1989. http://dx.doi.org/10.1007/978-1-4615-7402-6_9.

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Ferry, D. K., G. Bernstein, and Wen-Ping Liu. "Electron-Beam Lithography of Ultra-Submicron Devices." In Physics and Technology of Submicron Structures, 37–44. Berlin, Heidelberg: Springer Berlin Heidelberg, 1988. http://dx.doi.org/10.1007/978-3-642-83431-8_4.

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Wilkinson, C. D. W. "Applications of Electron Beam Lithography to Integrated Optics." In Springer Series in Optical Sciences, 30–33. Berlin, Heidelberg: Springer Berlin Heidelberg, 1985. http://dx.doi.org/10.1007/978-3-540-39452-5_8.

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Conference papers on the topic "Electron-beam lithography"

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Lennon, D. M., S. J. Spector, T. H. Fedynyshyn, T. M. Lyszczarz, M. Rothschild, J. Thackeray, and K. Spear-Alfonso. "Hybrid optical: electron-beam resists." In Advanced Lithography, edited by Qinghuang Lin. SPIE, 2007. http://dx.doi.org/10.1117/12.714370.

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Kingsborough, Richard P., Russell B. Goodman, David Astolfi, and Theodore H. Fedynyshyn. "Electron-beam directed materials assembly." In SPIE Advanced Lithography, edited by Daniel J. C. Herr. SPIE, 2010. http://dx.doi.org/10.1117/12.846000.

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Saitou, Norio, Teruo Iwasaki, and Fumio Murai. "Multiple scattered electron-beam effect in electron-beam lithography." In Micro - DL tentative, edited by Martin C. Peckerar. SPIE, 1991. http://dx.doi.org/10.1117/12.47355.

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Feinerman, Alan D., David A. Crewe, Dung-Ching Perng, S. E. Shoaf, and Albert V. Crewe. "High-throughput electron-beam lithography." In Optical Engineering Midwest 1992, edited by Robert J. Heaston. SPIE, 1992. http://dx.doi.org/10.1117/12.130961.

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Saitou, Norio, and Yoshio Sakitani. "Cell projection electron-beam lithography." In SPIE's 1994 Symposium on Microlithography, edited by David O. Patterson. SPIE, 1994. http://dx.doi.org/10.1117/12.175811.

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Petric, Paul, Chris Bevis, Alan Brodie, Allen Carroll, Anthony Cheung, Luca Grella, Mark McCord, Henry Percy, Keith Standiford, and Marek Zywno. "REBL nanowriter: Reflective Electron Beam Lithography." In SPIE Advanced Lithography, edited by Frank M. Schellenberg and Bruno M. La Fontaine. SPIE, 2009. http://dx.doi.org/10.1117/12.817319.

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Kojima, Yoshinori, Yasushi Takahashi, Shuzo Ohshio, Shinji Sugatani, and Junichi Kon. "Practical study on the electron-beam-only alignment strategy for the electron beam direct writing technology." In SPIE Advanced Lithography, edited by William M. Tong and Douglas J. Resnick. SPIE, 2013. http://dx.doi.org/10.1117/12.2011628.

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Lin, Luke, Jia-Yun Chen, Wen-Yi Wong, Mark McCord, Alex Tsai, Steven Oestreich, Indranil De, Jan Lauber, and Andrew Kang. "Etch process monitoring by electron beam wafer inspection." In Advanced Lithography, edited by Chas N. Archie. SPIE, 2007. http://dx.doi.org/10.1117/12.712386.

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Isotalo, Tero J., and Tapio Niemi. "Dots-on-the-fly electron beam lithography." In SPIE Advanced Lithography, edited by Christopher Bencher and Joy Y. Cheng. SPIE, 2016. http://dx.doi.org/10.1117/12.2219136.

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Jamieson, Andrew, Bennett Olson, Maiying Lu, and Nathan Wilcox. "Advanced electron beam resist requirements and challenges." In SPIE Advanced Lithography, edited by Mark H. Somervell. SPIE, 2013. http://dx.doi.org/10.1117/12.2014527.

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Reports on the topic "Electron-beam lithography"

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Browning, R., and R. F. Pease. Low Voltage Electron Beam Lithography. Fort Belvoir, VA: Defense Technical Information Center, April 1994. http://dx.doi.org/10.21236/ada281046.

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NAVAL RESEARCH LAB WASHINGTON DC. Low Voltage Electron Beam Lithography. Fort Belvoir, VA: Defense Technical Information Center, March 1995. http://dx.doi.org/10.21236/ada293396.

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Liu, Weidong. Low Voltage Electron Beam Lithography. Fort Belvoir, VA: Defense Technical Information Center, June 1995. http://dx.doi.org/10.21236/ada296625.

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Browning, R., and R. F. Pease. Low Voltage Electron Beam Lithography. Fort Belvoir, VA: Defense Technical Information Center, October 1992. http://dx.doi.org/10.21236/ada263360.

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Browning, R., and R. F. Pease. Low Voltage Electron Beam Lithography. Fort Belvoir, VA: Defense Technical Information Center, February 1993. http://dx.doi.org/10.21236/ada265358.

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Smith, Henry I. Spatial-Phase-Locked Electron-Beam Lithography. Fort Belvoir, VA: Defense Technical Information Center, December 1999. http://dx.doi.org/10.21236/ada379019.

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Liu, Weidong. Electron Specimen Interaction in Low Voltage Electron Beam Lithography,. Fort Belvoir, VA: Defense Technical Information Center, July 1995. http://dx.doi.org/10.21236/ada327202.

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Lee, Sing H. Establishment of an Electron Beam Lithography Facility. Fort Belvoir, VA: Defense Technical Information Center, February 1989. http://dx.doi.org/10.21236/ada206215.

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Fulton, R. D., J. Abdallah, J. C. Goldstein, M. E. Jones, D. P. Kilcrease, J. M. Kinross-Wright, S. H. Kong, and D. C. Nguyen. A debris free, electron beam driven, lithography source at 130 {angstrom}. Office of Scientific and Technical Information (OSTI), December 1994. http://dx.doi.org/10.2172/10113361.

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Fulton, Robert Douglas, and Alan Todd. RF Electron-Beam-Driven Plasma Radiation Source for EUV Lithography and High Resolution Radiography of Containment Vessels. Office of Scientific and Technical Information (OSTI), July 1997. http://dx.doi.org/10.2172/770485.

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