Relevant bibliographies by topics / Electron-Beam-Induced Annealing

Academic literature on the topic 'Electron-Beam-Induced Annealing'

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Published: 4 June 2021
Last updated: 29 January 2023

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Journal articles on the topic "Electron-Beam-Induced Annealing"

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Muntifering, Brittany, Rémi Dingreville, Khalid Hattar, and Jianmin Qu. "Electron Beam Effects during In-Situ Annealing of Self-Ion Irradiated Nanocrystalline Nickel." MRS Proceedings 1809 (2015): 13–18. http://dx.doi.org/10.1557/opl.2015.499.

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ABSTRACTTransmission electron microscopy (TEM) is a valuable methodology for investigating radiation-induced microstructural changes and elucidating the underlying mechanisms involved in the aging and degradation of nuclear reactor materials. However, the use of electrons for imaging may result in several inadvertent effects that can potentially change the microstructure and mechanisms active in the material being investigated. In this study, in situ TEM characterization is performed on nanocrystalline nickel samples under self-ion irradiation and post irradiation annealing. During annealing, voids are formed around 200 °C only in the area illuminated by the electron beam. Based on diffraction patterns analyses, it is hypothesized that the electron beam enhanced the growth of a NiO layer resulting in a decrease of vacancy mobility during annealing. The electron beam used to investigate self-ion irradiation ultimately significantly affected the type of defects formed and the final defect microstructure.
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Tripathi, S., R. Brajpuriya, A. Sharma, T. Shripathi, and S. M. Chaudhari. "Annealing induced structural changes in electron beam evaporated Si/Ge multilayers." European Physical Journal Applied Physics 34, no. 1 (March 23, 2006): 13–19. http://dx.doi.org/10.1051/epjap:2006028.

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Váczi, Tamás, and Lutz Nasdala. "Electron-beam-induced annealing of natural zircon: a Raman spectroscopic study." Physics and Chemistry of Minerals 44, no. 6 (December 2, 2016): 389–401. http://dx.doi.org/10.1007/s00269-016-0866-x.

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Mizuno, Naomi, Fernando Camino, and Xu Du. "In Situ Study of the Impact of Aberration-Corrected Electron-Beam Lithography on the Electronic Transport of Suspended Graphene Devices." Nanomaterials 10, no. 4 (April 2, 2020): 666. http://dx.doi.org/10.3390/nano10040666.

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The implementation of aberration-corrected electron beam lithography (AC-EBL) in a 200 keV scanning transmission electron microscope (STEM) is a novel technique that could be used for the fabrication of quantum devices based on 2D atomic crystals with single nanometer critical dimensions, allowing to observe more robust quantum effects. In this work we study electron beam sculpturing of nanostructures on suspended graphene field effect transistors using AC-EBL, focusing on the in situ characterization of the impact of electron beam exposure on device electronic transport quality. When AC-EBL is performed on a graphene channel (local exposure) or on the outside vicinity of a graphene channel (non-local exposure), the charge transport characteristics of graphene can be significantly affected due to charge doping and scattering. While the detrimental effect of non-local exposure can be largely removed by vigorous annealing, local-exposure induced damage is irreversible and cannot be fixed by annealing. We discuss the possible causes of the observed exposure effects. Our results provide guidance to the future development of high-energy electron beam lithography for nanomaterial device fabrication.
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HEILMANN, A., A. D. MÜLLER, and J. WERNER. "SIZE AND SHAPE MANIPULATION OF SILVER AND INDIUM SMALL PARTICLES BY ELECTRON-BEAM IRRADIATION." Surface Review and Letters 03, no. 01 (February 1996): 1113–19. http://dx.doi.org/10.1142/s0218625x96001996.

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Small particles of indium or silver were encapsulated in a thin polymer film matrix by simultaneous plasma polymerization and metal evaporation. Electron-beam irradiation inside transmission electron microscopes and with a microfocus electron source was used to induce changes of the encapsulated particle size and shape. At encapsulated indium particles, substantial microstructural changes were observed during the electron-beam irradiation in the electron microscope. Selected area diffraction demonstrates that indium oxide was formed during the electron irradiation. Additional in situ annealing demonstrates that the indium melting point was not reached during electron-beam-induced local heating of the indium particles. At electron-beam irradiation of plasma polymer films with encapsulated silver particles by using a microfocus electron source, the coalescence of the silver particles can be limited to the irradiated areas of the films.
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Kato, Tetsuji, Yoshiaki Nakamura, P. P. T. Son, Jun Kikkawa, and Akira Sakai. "Electron-Beam-Induced Current Study of Electronic Property Change at SrTiO3 Bicrystal Interface Induced by Forming Process." Materials Science Forum 725 (July 2012): 261–64. http://dx.doi.org/10.4028/www.scientific.net/msf.725.261.

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We investigated the spatial variation of energy band structure in a SrTiO3 (001) bicrystal with the (100) 10° tilt boundary before and after the annealing process at 973 K under a vacuum of ~10-7 Torr and after the subsequent forming process with electrical dielectric breakdown, using electron beam induced current (EBIC) method in the temperature range between 200 and 300K. Although the EBIC contrast at the tilt boundary was weak before and after the annealing, it became visible after the forming process and stronger as the observation temperature decreased to less than 260 K. It was found that the EBIC direction at the tilt boundary is opposite to that in the matrix, i.e. the single crystalline regions of both sides of the tilt boundary. In the matrix, the EBIC increased after the annealing and decreased again after the forming process. We propose energy band structures of the bicrystalline SrTiO3 after the annealing and after the forming process.
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Соковнин, С. Ю., В. Г. Ильвес, М. Г. Зуев, and М. А. Уймин. "Магнитные и люминесцентные свойства нанопорошка фторида бария, полученного методом испарения импульсным электронным пучком в газе низкого давления." Письма в журнал технической физики 44, no. 17 (2018): 19. http://dx.doi.org/10.21883/pjtf.2018.17.46566.17270.

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AbstractMesoporous amorphous-crystalline nanopowders of BaF_2 with the specific surface area up to 34.8 m^2/g were obtained using evaporation by a pulsed electron beam in vacuum. Influence of the thermal annealing of the BaF_2 nanoparticles in air at the temperatures from 200 to 900°C on the size and morphology of the particles and changes in their magnetic and luminescent properties was studied. The paramagnetic response of the BaF_2 nanopowder was found to transform to the ferromagnetic response after annealing at 900°C. The appearance and transformation of the magnetic response in nanopowders made of BaF_2, which is diamagnetic as the bulk material, are ascribed to the appearance of radiation-induced and structural defects during the synthesis process by pulsed electron-beam evaporation.
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Ohmura, Yamichi, Chiyuki Hayakawa, Takao Suzuki, and Kenji Tajima. "Annealing and Hydrogenation Behaviors of Electron-Beam Induced Defects in n-type Si." Japanese Journal of Applied Physics 38, Part 1, No. 7A (July 15, 1999): 4047–48. http://dx.doi.org/10.1143/jjap.38.4047.

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Chander, Subhash, and M. S. Dhaka. "Thermal annealing induced physical properties of electron beam vacuum evaporated CdZnTe thin films." Thin Solid Films 625 (March 2017): 131–37. http://dx.doi.org/10.1016/j.tsf.2017.01.052.

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Furuya, Kazuo, Masaki Takeguchi, and Kazutaka Mitsuishi. "Iron Nanostructures Fabricated by Electron Beam Induced Deposition and its Magnetic Properties." Solid State Phenomena 124-126 (June 2007): 139–42. http://dx.doi.org/10.4028/www.scientific.net/ssp.124-126.139.

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Electron beam induced deposition (EBID) was carried out with gas introduction systems attached to field emission scanning electron microscope (FE-SEM). Using iron carbonyl and ferrocene, three dimensional (3-D) antenna structures were fabricated in the range of 30-50 nm in diameter and 500-1000 nm in size. Post-deposition annealing of iron nanostructures resulted in the formation of crystalline alpha-iron and iron carbide phases. The iron concentration was controlled by the partial pressure of iron carbonyl and ferrocene. Electron holography observation with field emission transmission electron microscopy (FE-TEM) revealed that the remanent magnetic flux density Br of the nanostructures also depends on the iron concentration.
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Dissertations / Theses on the topic "Electron-Beam-Induced Annealing"

1

Khalil, Ali Saied, and askhalil2004@yahoo com. "Heavy-Ion-Irradiation-Induced Disorder in Indium Phosphide and Selected Compounds." The Australian National University. Research School of Information Sciences and Engineering, 2007. http://thesis.anu.edu.au./public/adt-ANU20070716.140841.

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Indium phosphide (InP) is an important III-V compound, with a variety of applications, for example, in light emitting diodes (LED), InP based photonic crystals and in semiconductor lasers, heterojunction bipolar transistors in integrated circuit applications and in transistors for microwave and millimeter-wave systems. The optical and electrical properties of this compound can be further tailored by ion implantation or prospectively by swift heavy ion beams. ¶ Thus knowledge of ion-induced disorder in this material is of important fundamental and practical interest. However, the disorder produced during heavy ion irradiation and the subsequent damage accumulation and recovery in InP is far from being completely understood. In terms of the damage accumulation mechanisms, the conclusions drawn in the numerous studies performed have often been in conflict with one another. A factor contributing to the uncertainties associated with these conflicting results is a lack of information and direct observation of the “building blocks” leading to the ultimate damage created at high ion fluences as an amorphous layer. These building blocks formed at lower fluence regimes by single ion impacts can be directly observed as isolated disordered zones and ion tracks for low energy and swift heavy ion irradiation, respectively. ¶ The primary aim of this work has thus been to obtain a better understanding of the disorder in this material through direct observations and investigation of disorder produced by individual heavy ions in both energy regimes (i.e. elastic and inelastic energy deposition regimes) especially with low ion fluence irradiations. In this thesis the heavy ion induced disorder introduced by low energy Au ions (100 keV Au+) and high energy Au (200 MeV Au+16) ion irradiation in InP were investigated using Transmission Electron Microscopy (TEM), Rutherford Backscattering Spectrometry (RBS/C) and Atomic Force Microscopy (AFM). ¶ The accumulation of damage due to disordered zones and ion tracks is described and discussed for both low energy and swift ion irradiation respectively. ¶ The in-situ TEM annealing of disordered zones created by 100 keV Au+ ion irradiation shows that these zones are sensitive to electron beam irradiation and anneal under electron energies not sufficient to elastically displace lattice atoms, i.e. subthreshold energies for both constituent atoms In and P. ¶ Ion tracks due to swift heavy ion irradiation were observed in this material and the interesting track morphology was described and discussed. The surface nanotopographical changes due to increasing fluence of swift heavy ions were observed by AFM where the onset of large increase in surface roughness for fluences sufficient to cause complete surface amorphization was observed. ¶ In addition to InP, the principle material of this project, a limited amount of TEM observation work has been performed on several other important compounds (apatite and monazite) irradiated by 200 MeV Au+ ions for comparative purposes. Again the observed segmental morphology of ion tracks were shown and possible track formation scenario and structure were discussed and similarities were drawn to the previously observed C60 cluster ion tracks in CaF2 as more knowledge and data base exist about defect dynamics and formation in that material.
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Smith, Gabriel. "PARAMETERS AFFECTING THE RESISTIVITY OF LP-EBID DEPOSITED COPPER NANOWIRES." UKnowledge, 2018. https://uknowledge.uky.edu/ece_etds/114.

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Electron Beam Induced Deposition (EBID) is a direct write fabrication process with applications in circuit edit and debug, mask repair, and rapid prototyping. However, it suffers from significant drawbacks, most notably low purity. Work over the last several years has demonstrated that deposition from bulk liquid precursors, rather than organometallic gaseous precursors, results in high purity deposits of low resistivity (LPEBID). In this work, it is shown that the deposits resulting from LP-EBID are only highly conductive when deposited at line doses below 25μC/cm. When the dose exceeds this value, the resulting structure is highly porous providing a poor conductive pathway. It is also shown that beam current has no significant effect on the resistivity of the deposits. Nanowires with resistivity significantly lower than the previous best result of 67μΩ•cm were achieved, with the lowest resistivity being only 6.6μΩ•cm, only a factor of 4 higher than that bulk copper of 1.7μΩ•cm.
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3

Khalil, Ali Saied. "Heavy-Ion-Irradiation-Induced Disorder in Indium Phosphide and Selected Compounds." Phd thesis, 2007. http://hdl.handle.net/1885/47462.

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Indium phosphide (InP) is an important III-V compound, with a variety of applications, for example, in light emitting diodes (LED), InP based photonic crystals and in semiconductor lasers, heterojunction bipolar transistors in integrated circuit applications and in transistors for microwave and millimeter-wave systems. The optical and electrical properties of this compound can be further tailored by ion implantation or prospectively by swift heavy ion beams. ¶ Thus knowledge of ion-induced disorder in this material is of important fundamental and practical interest. However, the disorder produced during heavy ion irradiation and the subsequent damage accumulation and recovery in InP is far from being completely understood. In terms of the damage accumulation mechanisms, the conclusions drawn in the numerous studies performed have often been in conflict with one another. A factor contributing to the uncertainties associated with these conflicting results is a lack of information and direct observation of the “building blocks” leading to the ultimate damage created at high ion fluences as an amorphous layer. These building blocks formed at lower fluence regimes by single ion impacts can be directly observed as isolated disordered zones and ion tracks for low energy and swift heavy ion irradiation, respectively. ¶ The primary aim of this work has thus been to obtain a better understanding of the disorder in this material through direct observations and investigation of disorder produced by individual heavy ions in both energy regimes (i.e. elastic and inelastic energy deposition regimes) especially with low ion fluence irradiations. In this thesis the heavy ion induced disorder introduced by low energy Au ions (100 keV Au+) and high energy Au (200 MeV Au+16) ion irradiation in InP were investigated using Transmission Electron Microscopy (TEM), Rutherford Backscattering Spectrometry (RBS/C) and Atomic Force Microscopy (AFM). ¶ ...
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Book chapters on the topic "Electron-Beam-Induced Annealing"

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Pitaval, M., M. Tholomier, M. Ambri, G. Chemisky, D. Barbier, and A. Laugier. "SEM studies of structural defects induced by thermoelastic stresses during pulsed electron beam annealing in silicon." In Microscopy of Semiconducting Materials, 1983, 173–78. CRC Press, 2020. http://dx.doi.org/10.1201/9781003069614-26.

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Baljtjba, V. I., V. P. Vobonkdv, A. P. Vjatkin, N. I. Lebedeva, and D. E. Psoskdhovsky. "PHYSICAL AND ELECTROPHYSICAL PROPERTIES OF Ge2x(GaAs)1-x LAYERS INDUCED BY PULSE ELECTRON BEAM ANNEALING." In EPM ’89: 3rd International Conference on Energy Pulse and Particle Beam Modification of Materials, September 4.–8. 1989, Dresden, GDR, 191–93. De Gruyter, 1989. http://dx.doi.org/10.1515/9783112575666-034.

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