Academic literature on the topic 'Electromigration-thermomigration'

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Journal articles on the topic "Electromigration-thermomigration"

1

Yang, D., Y. C. Chan, B. Y. Wu, and M. Pecht. "Electromigration and thermomigration behavior of flip chip solder joints in high current density packages." Journal of Materials Research 23, no. 9 (2008): 2333–39. http://dx.doi.org/10.1557/jmr.2008.0305.

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The electromigration and thermomigration behavior of eutectic tin-lead flip chip solder joints, subjected to currents ranging from 1.6 to 2.0 A, at ambient temperatures above 100 °C, was experimentally and numerically studied. The temperature at the chip side was monitored using both a temperature coefficient of resistance method and a thermal infrared technique. The electron wind force and thermal gradient played the dominant role in accelerated atomic migration. The atomic flux of lead due to electromigration and thermomigration was estimated for comparison. At the current crowding region, e
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2

Abdulhamid, Mohd F., Cemal Basaran, and Yi-Shao Lai. "Thermomigration Versus Electromigration in Microelectronics Solder Joints." IEEE Transactions on Advanced Packaging 32, no. 3 (2009): 627–35. http://dx.doi.org/10.1109/tadvp.2009.2018293.

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3

Shidong Li, Mohd F. Abdulhamid, and Cemal Basaran. "Simulating Damage Mechanics of Electromigration and Thermomigration." SIMULATION 84, no. 8-9 (2008): 391–401. http://dx.doi.org/10.1177/0037549708094856.

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4

Yao, Wei, and Cemal Basaran. "Computational damage mechanics of electromigration and thermomigration." Journal of Applied Physics 114, no. 10 (2013): 103708. http://dx.doi.org/10.1063/1.4821015.

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5

Gu, Xin, and Y. C. Chan. "Thermomigration and electromigration in Sn58Bi solder joints." Journal of Applied Physics 105, no. 9 (2009): 093537. http://dx.doi.org/10.1063/1.3125458.

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6

Gu, X., K. C. Yung, Y. C. Chan, and D. Yang. "Thermomigration and electromigration in Sn8Zn3Bi solder joints." Journal of Materials Science: Materials in Electronics 22, no. 3 (2010): 217–22. http://dx.doi.org/10.1007/s10854-010-0116-9.

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7

Dohle, Rainer, Stefan Härter, Andreas Wirth та ін. "Electromigration Performance of Flip-Chips with Lead-Free Solder Bumps between 30 μm and 60 μm Diameter". International Symposium on Microelectronics 2012, № 1 (2012): 000891–905. http://dx.doi.org/10.4071/isom-2012-wp41.

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As the solder bump sizes continuously decrease with scaling of the geometries, current densities within individual solder bumps will increase along with higher operation temperatures of the dies. Since electromigration of flip-chip interconnects is highly affected by these factors and therefore an increasing reliability concern, long-term characterization of new interconnect developments needs to be done regarding the electromigration performance using accelerated life tests. Furthermore, a large temperature gradient exists across the solder interconnects, leading to thermomigration. In this s
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8

Shidong Li, M. F. Abdulhamid, and C. Basaran. "Damage Mechanics of Low Temperature Electromigration and Thermomigration." IEEE Transactions on Advanced Packaging 32, no. 2 (2009): 478–85. http://dx.doi.org/10.1109/tadvp.2008.2005840.

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9

Lin, Y. H., C. M. Tsai, Y. C. Hu, Y. L. Lin, J. Y. Tsai, and C. R. Kao. "Electromigration Induced Metal Dissolution in Flip-Chip Solder Joints." Materials Science Forum 475-479 (January 2005): 2655–58. http://dx.doi.org/10.4028/www.scientific.net/msf.475-479.2655.

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The failure of flip chip solder joints through the dissolution of the Cu metallization was studied. From the location and geometry of the dissolved Cu, it can be concluded that current crowding played a critical role in the dissolution. It can also be concluded that temperature, as an experimental variable, is not less import than the current density in electromigration study. Experimentally, no evidence of mass transport due to thermomigration was observed.
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10

Somaiah, Nalla, and Praveen Kumar. "Tuning electromigration-thermomigration coupling in Cu/W Blech structures." Journal of Applied Physics 124, no. 18 (2018): 185102. http://dx.doi.org/10.1063/1.5045086.

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