Academic literature on the topic 'Electromigration-thermomigration'

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Journal articles on the topic "Electromigration-thermomigration"

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Yang, D., Y. C. Chan, B. Y. Wu, and M. Pecht. "Electromigration and thermomigration behavior of flip chip solder joints in high current density packages." Journal of Materials Research 23, no. 9 (September 2008): 2333–39. http://dx.doi.org/10.1557/jmr.2008.0305.

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The electromigration and thermomigration behavior of eutectic tin-lead flip chip solder joints, subjected to currents ranging from 1.6 to 2.0 A, at ambient temperatures above 100 °C, was experimentally and numerically studied. The temperature at the chip side was monitored using both a temperature coefficient of resistance method and a thermal infrared technique. The electron wind force and thermal gradient played the dominant role in accelerated atomic migration. The atomic flux of lead due to electromigration and thermomigration was estimated for comparison. At the current crowding region, electromigration induced a more serious void accumulation as compared with thermomigration. Also, because of different thermal dissipations, a morphological variation was detected at different cross-sectional planes of the solder joint during thermomigration.
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Abdulhamid, Mohd F., Cemal Basaran, and Yi-Shao Lai. "Thermomigration Versus Electromigration in Microelectronics Solder Joints." IEEE Transactions on Advanced Packaging 32, no. 3 (August 2009): 627–35. http://dx.doi.org/10.1109/tadvp.2009.2018293.

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Shidong Li, Mohd F. Abdulhamid, and Cemal Basaran. "Simulating Damage Mechanics of Electromigration and Thermomigration." SIMULATION 84, no. 8-9 (August 2008): 391–401. http://dx.doi.org/10.1177/0037549708094856.

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Yao, Wei, and Cemal Basaran. "Computational damage mechanics of electromigration and thermomigration." Journal of Applied Physics 114, no. 10 (September 14, 2013): 103708. http://dx.doi.org/10.1063/1.4821015.

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Gu, Xin, and Y. C. Chan. "Thermomigration and electromigration in Sn58Bi solder joints." Journal of Applied Physics 105, no. 9 (May 2009): 093537. http://dx.doi.org/10.1063/1.3125458.

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Gu, X., K. C. Yung, Y. C. Chan, and D. Yang. "Thermomigration and electromigration in Sn8Zn3Bi solder joints." Journal of Materials Science: Materials in Electronics 22, no. 3 (April 18, 2010): 217–22. http://dx.doi.org/10.1007/s10854-010-0116-9.

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Dohle, Rainer, Stefan Härter, Andreas Wirth, Jörg Goßler, Marek Gorywoda, Andreas Reinhardt, and Jörg Franke. "Electromigration Performance of Flip-Chips with Lead-Free Solder Bumps between 30 μm and 60 μm Diameter." International Symposium on Microelectronics 2012, no. 1 (January 1, 2012): 000891–905. http://dx.doi.org/10.4071/isom-2012-wp41.

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As the solder bump sizes continuously decrease with scaling of the geometries, current densities within individual solder bumps will increase along with higher operation temperatures of the dies. Since electromigration of flip-chip interconnects is highly affected by these factors and therefore an increasing reliability concern, long-term characterization of new interconnect developments needs to be done regarding the electromigration performance using accelerated life tests. Furthermore, a large temperature gradient exists across the solder interconnects, leading to thermomigration. In this study, a comprehensive overlook of the long-term reliability and analysis of the achieved electromigration performance of flip-chip test specimen will be given, supplemented by an in-depth material science analysis. In addition, the challenges to a better understanding of electromigration and thermomigration in ultra fine-pitch flip-chip solder joints are discussed. For all experiments, specially designed flip-chips with a pitch of 100 μm and solder bump diameters of 30–60 μm have been used [1]. Solder spheres can be made of every lead-free alloy (in our case SAC305) and are placed on a UBM which has been realized for our test chips in an electroless nickel process [2]. For the electromigration tests within this study, multiple combinations of individual current densities and temperatures were adapted to the respective solder sphere diameters. Online measurements over a time period up to 10,000 hours with separate daisy chain connections of each test coupon provide exact lifetime data during the electromigration tests. As failure modes have been identified: UBM consumption at the chip side or depletion of the Nickel layer at the substrate side, interfacial void formation at the cathode contact interface, and - to a much lesser degree - Kirkendall-like void formation at the anode side. A comparison between calculated life time data using Weibull distribution and lognormal distribution will be given.
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Shidong Li, M. F. Abdulhamid, and C. Basaran. "Damage Mechanics of Low Temperature Electromigration and Thermomigration." IEEE Transactions on Advanced Packaging 32, no. 2 (May 2009): 478–85. http://dx.doi.org/10.1109/tadvp.2008.2005840.

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Lin, Y. H., C. M. Tsai, Y. C. Hu, Y. L. Lin, J. Y. Tsai, and C. R. Kao. "Electromigration Induced Metal Dissolution in Flip-Chip Solder Joints." Materials Science Forum 475-479 (January 2005): 2655–58. http://dx.doi.org/10.4028/www.scientific.net/msf.475-479.2655.

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The failure of flip chip solder joints through the dissolution of the Cu metallization was studied. From the location and geometry of the dissolved Cu, it can be concluded that current crowding played a critical role in the dissolution. It can also be concluded that temperature, as an experimental variable, is not less import than the current density in electromigration study. Experimentally, no evidence of mass transport due to thermomigration was observed.
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Somaiah, Nalla, and Praveen Kumar. "Tuning electromigration-thermomigration coupling in Cu/W Blech structures." Journal of Applied Physics 124, no. 18 (November 14, 2018): 185102. http://dx.doi.org/10.1063/1.5045086.

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Dissertations / Theses on the topic "Electromigration-thermomigration"

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Ou, Yang Fan-Yi. "Electromigration and thermomigration in Pb-free SnAgCu and eutectic SnPb flip chip solder joints." Diss., Restricted to subscribing institutions, 2007. http://proquest.umi.com/pqdweb?did=1495962721&sid=1&Fmt=2&clientId=1564&RQT=309&VName=PQD.

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Meinshausen, Lutz. "Modelling the SAC microstructure evolution under thermal, thermo-mechanical and electronical constraints." Thesis, Bordeaux, 2014. http://www.theses.fr/2014BORD0149/document.

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L'assemblage tridimensionnel des circuits microélectroniques et leur utilisation dansdes conditions environnementales extrêmement sévères nécessitent ledéveloppement d’alternatives plus robustes pour les contacts électriques. Unetechnique prometteuse est la transformation des contacts de brasure conventionnelleen composés intermétalliques (IMC). Ce processus est appelé « Transient LiquidPhase Soldering » (TLPS).Dans ce contexte, des tests accélérés permettant la formation d’IMC parélectromigration et thermomigration ont été effectués sur des structures « Packageon Package ». L'objectif principal est le développement d'un modèle généralpermettant de décrire la formation des IMC dans les joints de brasure. Combiné avecune analyse par éléments finis ce modèle pourra être utilisé pour prédire la formationdes IMC dans les joints de brasure pour des structures et des profils de missiondifférents. Le modèle de formation des IMC pourra être utilisé pour optimiser unprocessus TLPS
A further miniaturization of microelectronic components by three dimensionalpackaging, as well as the use of microelectronic devices under harsh environmentconditions, requires the development of more robust alternatives to the existing Snbased solder joints. One promising technique is the diffusion and migration driventransformation of conventional solder bumps into intermetallic compound (IMC)connections. The related process is called transient liquid phase soldering (TLPS).Against this background an investigation of the IMC formation under consideration ofelectromigration and thermomigration was performed. For the stress tests Packageon Package structures are used. The final result is a general model for the IMCformation in solder joints. Combined with a Finite Element Analysis (FEA) this modelis used to predict the IMC formation in solder joints for a broad range of boundaryconditions. In future the model of the IMC formation can be used to optimize a TLPSprocess
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El, Barraj Ali. "Growth and electro-thermomigration on semiconductor surfaces by low energy electron microscopy." Thesis, Aix-Marseille, 2019. http://www.theses.fr/2019AIXM0393.

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Dans ce mémoire sont abordées quelques études sur la croissance, l'électromigration et la thermomigration de la surface des semiconducteurs tels que le Ge(111), le Si(100) et le Si(111). Sur le plan expérimental, la Microscopie à Electrons Lents (LEEM) nous a permis d'accéder à la dynamiques des phénomènes in situ et en temps réel. Nous étudions l'électromigration et la thermomigration sur la surface de Si(100) qui présente deux reconstructions de surfaces (2x1) et (1x2) selon l'orientation des dimères. Nous montrons que l'anisotropie de diffusion peut affecter le sens de mouvement des nanostructures (trous et îlots). Nous étudions aussi l'électromigration et la thermomigration sur la surface de Si(111). Nous montrons que les trous (1x1) dans la phase (7x7) bougent dans le sens opposé au courant électrique, et dans le même sens du gradient thermique. Nous avons obtenu la charge effective et le coefficient de Soret des atomes de Si en présence d'un courant électrique et d'un gradient thermique. Enfin est abordée l'étude de la nucléation, la croissance et la coalescence dynamique de gouttelettes d'Au sur la surface d'Au/Ge(111), ainsi que l'électromigration des domaines 2D d'Au/Ge(111)-(√3x√3) dans la phase (1x1)
This thesis is focused on the study of the growth, electromigration and thermomigration of nanostructures on the surface of semiconductors such as Si(100), Si(111) and Ge(111). On an experimental viewpoint, Low Energy Electron Microscopy (LEEM) allows us to access to the dynamics of the phenomena in situ and in real time. We have studied under electromigration and thermomigration the motions of 2D monoatomic holes and islands on the Si (100) surface. We have shown that diffusion anisotropy due to (2x1) and (1x2) surface reconstructions can affect the direction of motion of nanostructures. We have also studied electromigration and thermomigration of Si (111) surface. We show that 2D-(1x1) holes in the (7x7) phase move in the direction opposite to the electric current, while in the direction of the thermal gradient. We have obtained the effective charge and the Soret coefficient of Si atoms in presence of an electric current and a thermal gradient. At last, the nucleation, growth and dynamic coalescence of Au droplets on Au/Ge(111) surface is studied, and the electromigration of 2D Au/Ge(111)-( √3x√3) domains on Au/Ge(111)-(1x1) surface
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Lin, Minghui. "A thermodynamic framework for damage mechanics of electromigration and thermomigration." 2006. http://proquest.umi.com/pqdweb?did=1184163691&sid=5&Fmt=2&clientId=39334&RQT=309&VName=PQD.

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Thesis (Ph.D.)--State University of New York at Buffalo, 2006.
Title from PDF title page (viewed on Mar. 03, 2007) Available through UMI ProQuest Digital Dissertations. Thesis adviser: Basaran, Cemal. Includes bibliographical references.
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Guo, Shyh-Ming, and 郭世明. "Thermomigration and Electromigration in Flip Chip Sn-Ag-Cu Solder Bumps." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/54689599890953659188.

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碩士
國立成功大學
材料科學及工程學系碩博士班
93
The present work investigated the behaviors of electromigration and thermomigration in the Sn-3.0Ag-0.5Cu Pb-free flip chip solder bumps at 120°C by applying a three-bump set therein the electrical current flows in different directions. The third bump mainly experienced heat transfer from the Al trace without current flowing for comparison. The solder bumps were examined at specified period of current stressing using SEM (Scanning Electron Microscope) and EDX (Energy Dispersive X-ray Spectroscopy).  Voids formed on the Al trace/ solder interface regardless of the direction of electron flow. Voids also formed at the interface even though the current flowed along the Al trace. Thermomigration overwhelms electromigration and results in mass diffusion when counter flow of electron and thermal gradient exists. The thermal gradient throughout the bump drives the mass transfer of Sn and Al. Thermomigration results in the formation of voids on the Al trace/ solder interface and the accumulation of Sn on the substrate side. Due to the migration of Al through the IMC layer into the solder bump, the cracks are formed at the Al trace.  The electrical current resulted in the consumption of Ni in some local areas. The formation of intermetallic compound at the substrate side (metallized with Cu/Ni-P/Au) was suppressed when the electron flow and thermal gradient were in the opposite direction. On the other hand, the solder mass was forced to migrate to the substrate when the current flowed toward the substrate or along the Al trace.  In order to illustrate the importance of heat dissipation, a set of joints was stressed with current at an environmental temperature of –5oC. The comparison between the as produced bump and current stressed bump indicated that no visible defect exists either at the cathode or at the anode even after 600 hours. These observations further emphasized the significance of heat dissipation in reducing the migration defect.
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Shen, Yu-An, and 沈育安. "Effect of Sn Microstructure on Electromigration and Thermomigration in Sn2.3Ag Microbumps." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/42731029402804192866.

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博士
國立交通大學
材料科學與工程學系所
105
Microbump plays an important role to connect chips in three-dimensional integrated circuit (3D IC) technology. With the reduction of solder volume, the increase in current density and thermal gradient has raised serious reliability concern during electromigration and thermomigration. Tin microstructures are very important on testing the reliability of solder joints; Tin grain orientation affects electromigration and thermomigration in solder joints due to the high anisotropic diffusivity of Cu and Ni in Tin crystals; In addition, Sn grain boundaries could provide a fast path for the diffusion of Cu and Ni atoms. In this study, we investigate the microstructures of microbumps with Cu-Cu, Cu-Ni, and Ni-Ni UBM. The Sn grains between Cu-Cu- and Cu-Ni UBMs are larger than those between Ni-Ni UBM. However, the UBM materials have no significant effect on the orientation of Sn grains. Furthermore, we observe that Sn grain orientation plays a critical role in the growth of Cu-Sn intermetallic compounds (IMCs) during electromigration and thermomigration. For Sn grains with low α-angles, which is the angle between the c-axis of a Sn grain and electron direction or the direction of thermal gradient, Cu-Sn IMCs grew very fast during electromigration and thermomigration. On the other hand, the thickness of interfacial IMCs did not grow much in Sn grains with high α angles. This is because Cu diffusion was very slow in high-α-angle Sn grains. In addition, for Sn-Ag solder joints, most of the grain boundaries consist of cyclic twins, unideal paths for fast diffusion for Cu atoms. Therefore, the grain-boundary diffusion of Cu is less important than Sn orientation in the formation of Cu-Sn IMCs during electromigration.
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Wei-ChiehWang and 王偉傑. "Electromigration and Thermomigration Behavior of IMCs in Sn2.4Ag Flip Chip Solder Joint." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/07245457252679599191.

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碩士
國立成功大學
材料科學及工程學系碩博士班
100
The present study investigated the effect of electromigration and thermomigration on the evolution of intermetallic compounds (IMCs) in the flip chip Cu/Sn2.4Ag/Cu solder joints. In this study, two joints in a set were used with different directions of electrical current flow. In contrast, another joint mainly experienced heat from the ambient temperature without current stressing. The in situ current stressing test was started under current density of 7.5×104 A/cm2 under room temperature. In addition, under the high-temperature current stressing test, the solder joints were stressed with various current densities of 1.5 and 3.0×104 A/cm2 at 100℃, 150℃ and 180℃ respectively. The kinetic behavior of the growth of IMCs was investigated by analyzing their size and their distribution of IMCs in the joints. In the in situ experiment, the thickness of Cu3Sn and Cu6Sn5 IMC at the interface between the Cu layer and the solder did not change significantly. However, the size of Cu6Sn5 IMC particles in the solder matrix became larger during current stressing. Under the current density of 1.5×104A/cm2 at 180℃ and under 3.0×104A/cm2 at 150℃, uneven consumption of the cathodic Cu pad was observed. The dissolved Cu atoms migrated as a result of the driving force induced by electromigration and thermomigration, and formed Cu6Sn5 IMC with Sn atoms. However, the Cu3Sn IMC and Ag3Sn IMC did not congregate at the anode side, and their size increased linearly with temperature. From the kinetics studies, it is revealed that the value of activation energy required for the growth of Ag3Sn IMC during current stressing decreases to the value of activation energy in liquid alloy, and the mechanism of this reaction changes from diffusion controlled under thermal aging to reaction controlled under current stressing.
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Chae, Seung-Hyun 1977. "Electromigration and thermomigration reliability of lead-free solder joints for advanced packaging applications." Thesis, 2010. http://hdl.handle.net/2152/ETD-UT-2010-05-994.

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Electromigration (EM) and thermomigration (TM) reliability of Pb-free solder joints are emerging as critical concerns in advanced packages. In this study, EM and TM phenomena in Sn-2.5Ag solder joints with thick Cu or thin Ni under-bump metallurgy (UBM) were investigated. A series of EM tests were performed to obtain activation energy (Q) and current density exponent (n), and to understand failure mechanisms. Joule heating was also taken into account. Q and n values were determined as follows: for Cu UBM solders, Q = 1.0 eV and n = 1.5; for Ni UBM solders, Q = 0.9 and n = 2.2. Important factors limiting EM reliability of Pb-free solder joints were found to be UBM dissolution with extensive intermetallic compound (IMC) growth and current crowding. IMC growth without current stressing was found to follow the parabolic growth law whereas linear growth law was observed for Cu₆Sn₅ and Ni₃Sn₄ under high current stressing. For Cu UBM solders, the apparent activation energy for IMC growth was consistent with the activation energy for EM, which supports that EM failure was closely related to IMC growth. In contrast, for Ni UBM solders the apparent activation energy was higher than the EM activation energy. It was suggested that the EM failure in the Ni UBM solders could be associated with more than one mass transport mechanism. The current crowding effect was analyzed with different thicknesses of Ni UBM. It was found that the maximum current density in solder could represent the current density term in Black's equation better than the average current density. FEM studies demonstrated that current crowding was mainly controlled by UBM thickness, metal trace design, and passivation opening diameter. A large temperature gradient of the order of 10³ °C/cm was generated across the sample to induce noticeable TM and to compare its effect against that of EM. TM-induced voiding was observed in Ni UBM solders while UBM dissolution with IMC formation occurred in Cu UBM solders. However, the relative effect of TM was found to be several times smaller than that of EM even at this large temperature gradient.
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Tsai, Chia-Ming, and 蔡家銘. "Study of Electromigration and Thermomigration in Flip-Chip Solder Joints under Electron Flow Stressing." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/9d959a.

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博士
國立中央大學
化學工程與材料工程研究所
94
Abstract The flip chip technology has been the dominating packaging solution for high performance chips and will remain so in the foreseeable future due to its shorter electrical connection length between the chip and substrate. As the chip complexity increases, the I/O density on each chip also increases. To accommodate the continuing rise of the I/O density, the diameter of the flip chip solder joints must shrink. At present, the diameter of a solder joint is about 100 �慆, and it will be reduced to 50 �慆 soon. It means that the average current density in such a 50 �慆 joint is about 103 A/cm2 when a 0.02 A current is applied. Electromigration in flip-chip solder joints has become a serious reliability concern when the current density reaches the 103 A/cm2 level, which is about two orders of magnitude smaller than that in Al and Cu interconnects. The reason for this lower threshold current density to cause electromigration in solders has been pointed out to be the combination of several factors in the “critical product” of electromigration, including the higher resistivity, the smaller Young’s modulus, and the larger effective charge of solders. This lower threshold makes electromigration in solders now one of the major reliability threats to microelectronic devices. This investigation studies how electron flow distribution and vacancy concentration gradient affect the diffusion of solder atoms in a flip-chip solder joint under current stress. The migration of materials was traced by monitoring the positions of 21 Pb grains of the eutectic PbSn solder joint. Experimental results indicate that the displacements of the Pb grains were not uniform along in the electron flow direction. Additionally, certain Pb grains exhibited lateral displacements. The non-uniform material migration is attributable to the combined effect of electromigration and the vacancy concentration gradient, which was caused by electromigration. The combined effects of electromigration and thermomigration on material migration were also examined in this study. When the direction of electron flow is the same with temperature gradient, more solder atoms migrate. When the direction of electron flow is opposite with temperature gradient, less solder atoms migrate. Considering the effect of thermomigration in solder bump, the displacements of the Pb grains were measured, and the DZ* value of Sn in eutectic SnPb solder estimated to be -3.4×10-10 cm2/s. The calculated Z* value is about -34. This study also reported that the solder joints failed by local melting of PbSn eutectic solder bump. The local melting occurred due to a sequence of events induced by the microstructure changes of the flip chip solder joint. The formation of a depression in current crowding region of solder joint induced a local electrical resistance increased. The rising local resistance resulted in a larger Joule heating, which, in turn, raised the local temperature. When the local temperature rose above the eutectic temperature of the PbSn solder, the solder joint melted and consequently failed. This result also shows that several points need to be considered when we face the issues of electromigration on reliability of flip chip solder joints. Firstly, the geometry of flip solder joints should be designed to avoid the formation of current crowding region in solder bump. Secondly, in order to resist the microstructure change, the higher mechanical intensity solder need be chose. Thirdly, increasing heat dissipation of solder joint under current stressing or choosing the solder which has higher melting point in order to prevent the melting phenomenon occurred.
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Lin, Ger-Pin, and 林哲平. "Electromigration and Thermomigration in Ball Grid ArraySn-Zn-Ag-Al-Ga Lead-Free Solders." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/46125153766103878900.

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碩士
國立成功大學
材料科學及工程學系碩博士班
94
Eutectic Sn-Pb solder are mainly used to connect the electronic devices and printed circuit board. But, many countries have concerned about lead, which would pollute environment and hurt human health. The development of lead-free solders has become the most important issue, oxidation resistance, wettability, and other properties. This study investigated Sn8.5Zn0.5Ag0.01Al0.1Ga solder balls, which was developed by our lab. This study investigated the micro-structure of solder balls under electromigration and thermomigration effects. After assembly, we would apply different of current density to solder balls at 120℃. Electrons would impact the intermetallic compounds (AuZn3 and AgZn3) seriously in current crowding section. The intermetallic compounds would decompose. The atoms coming from intermetallic compound decomposition would move in the direction of temperature gradient and react to form intermetallic compounds. Without other atom to occupy the site in which intermetallic compounds decomposed, it would be observed voids. If the directions of thermomigration and electromigration were the same, Sn atom would be affected seriously by temperature gradient and electric impaction, and move in the direction. In this lead-free solder, the AgZn3-AuZn3-AgZn3 three layers compound would transfer and consume the Zn-rich phase in solder balls.
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Book chapters on the topic "Electromigration-thermomigration"

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Basaran, Cemal. "Unified Mechanics of Metals under High Electrical Current Density: Electromigration and Thermomigration." In Introduction to Unified Mechanics Theory with Applications, 395–425. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-57772-8_8.

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Basaran, Cemal. "Unified Mechanics of Metals Under High Electrical Current Density: Electromigration and Thermomigration." In Introduction to Unified Mechanics Theory with Applications, 427–58. Cham: Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-031-18621-9_8.

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Lloyd, James, King-Ning Tu, and Jasvir Jaspal. "The Physics and Materials Science of Electromigration and Thermomigration in Solders." In Handbook of Lead-Free Solder Technology for Microelectronic Assemblies. CRC Press, 2004. http://dx.doi.org/10.1201/9780203021484.ch20.

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"The Physics and Materials Science of Electromigration and Thermomigration in Solders." In Handbook of Lead-Free Solder Technology for Microelectronic Assemblies, 844–67. CRC Press, 2004. http://dx.doi.org/10.1201/9780203021484-25.

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Conference papers on the topic "Electromigration-thermomigration"

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Xin Gu, Kunpeng Ding, Jian Cai, and Lingwen Kong. "Electromigration and thermomigration in Sn3Ag0.5Cu solder joints." In High Density Packaging (ICEPT-HDP). IEEE, 2010. http://dx.doi.org/10.1109/icept.2010.5582786.

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Tu, K. N., Annie Huang, and Fan-Yi Ouyang. "Electromigration and thermomigration in flip chip solder joints." In 2006 8th International Conference on Electronic Materials and Packaging - EMAP '06. IEEE, 2006. http://dx.doi.org/10.1109/emap.2006.4430563.

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Cui, Zhen, Xuejun Fan, and Guoqi Zhang. "Effect of Thermomigration on Electromigration in SWEAT Structures." In 2023 24th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE). IEEE, 2023. http://dx.doi.org/10.1109/eurosime56861.2023.10100774.

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Abdul Hamid, Mohd Foad, and Cemal Basaran. "Low temperature electromigration and thermomigration in lead-free solder joints." In 2008 33rd IEEE/CPMT International Electronics Manufacturing Technology Conference (IEMT). IEEE, 2008. http://dx.doi.org/10.1109/iemt.2008.5507782.

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Yang, Dan, and Y. C. Chan. "The characteristics of electromigration and thermomigration in flip chip solder joints." In 2007 13th International Workshop on Thermal Investigation of ICs and Systems (THERMINIC). IEEE, 2007. http://dx.doi.org/10.1109/therminic.2007.4451744.

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Ouyang, Fan-Yi, Wei-Cheng Jhu, Hao Hsu, and Tsung-Han Yang. "Electromigration and thermomigration of Pb-free microbumps in three-dimensional integrated circuits packaging." In 2014 International Conference on Electronics Packaging (ICEP). IEEE, 2014. http://dx.doi.org/10.1109/icep.2014.6826668.

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Bt Syed Noh, Sharifah Nur'ai Shikin, Mohd Foad Abdul Hamid, and Mohd Nasir Tamin. "Mass Migration Damaged Based Model and the Behaviour of Electromigration and Thermomigration in Interconnect." In 2018 IEEE 38th International Electronics Manufacturing Technology Conference (IEMT). IEEE, 2018. http://dx.doi.org/10.1109/iemt.2018.8511802.

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Li, Menglu, K. N. Tu, Dong-Wook Kim, and Sam Gu. "Electromigration induced thermomigration in microbumps by thermal cross-talk across neighboring chips in 2.5D IC." In 2016 IEEE International Reliability Physics Symposium (IRPS). IEEE, 2016. http://dx.doi.org/10.1109/irps.2016.7574627.

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9

Chen, Bicheng, and Cemal Basaran. "Full Field Joule Heating Measurement of Copper Plate Using Phase Shifting Moire´ Interferometry in Microscopic Scale." In ASME 2009 InterPACK Conference collocated with the ASME 2009 Summer Heat Transfer Conference and the ASME 2009 3rd International Conference on Energy Sustainability. ASMEDC, 2009. http://dx.doi.org/10.1115/interpack2009-89014.

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Abstract:
Heat generated from Joule heating is an important factor in several failure mechanisms in microelectronic packaging (e.g. thermomigration, electromigration and etc) and large amount of the heat causes severe heat dissipation problem. It is further exaggerated by the continuous marching towards miniaturization of microelectronics. The techniques of measuring the Joule heating effects at the microscopic scale are quite limited especially for the full field measurement. Infrared microscopic imaging has been reported to measure the heat radiation by the Joule heating in the microscopic scale. Moire´ interferometry with phase shifting is a highly sensitive and a high resolution method to measure the in-plane full field strain. In this paper, it is demonstrated that the Joule heating effect can be measured by Moire´ interferometry with phase shifting at the microscopic scale. The copper sheet is used for the demonstration because of isotropic material property and well known thermal properties and parameters. The specimen was designed to minimize the out-of-plane strain and the strain caused by the thermal-structural effects. A finite element model was developed to verify the design of the structure of the specimen and the specimen was tested under different current density (input current from 0 to 24 A). Based on the research, a correlation relationship between the current density and the strain in two orthogonal directions (one in the direction of the current flow) was determined. The regression coefficients of the full field were analyzed. The experiment demonstrates the capability of measuring microscopic Joule heating effects by using Moire´ interferometry with phase shifting. The method can be further applied to the measurement of Joule heating effect in the microscopic solid structures in the electronic packaging devices.
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Liang, Shui-Bao, Chang-Bo Ke, Cheng Wei, Min-Bo Zhou, and Xin-Ping Zhang. "Phase field study of the combined effects of electromigration and thermomigration on phase segregation and physical properties of Sn58Bi solder joints under electric current stressing coupled with temperature gradient." In 2018 19th International Conference on Electronic Packaging Technology (ICEPT). IEEE, 2018. http://dx.doi.org/10.1109/icept.2018.8480529.

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