Journal articles: 'Electromechanical chain, Silicon Carbide (SiC)'

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Lee, Te-Hao, Swarup Bhunia, and Mehran Mehregany. "Electromechanical Computing at 500°C with Silicon Carbide." Science 329, no. 5997 (September 9, 2010): 1316–18. http://dx.doi.org/10.1126/science.1192511.

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Logic circuits capable of operating at high temperatures can alleviate expensive heat-sinking and thermal-management requirements of modern electronics and are enabling for advanced propulsion systems. Replacing existing complementary metal-oxide semiconductor field-effect transistors with silicon carbide (SiC) nanoelectromechanical system (NEMS) switches is a promising approach for low-power, high-performance logic operation at temperatures higher than 300°C, beyond the capability of conventional silicon technology. These switches are capable of achieving virtually zero off-state current, microwave operating frequencies, radiation hardness, and nanoscale dimensions. Here, we report a microfabricated electromechanical inverter with SiC complementary NEMS switches capable of operating at 500°C with ultralow leakage current.

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Mu, Yi, Cai Cheng, Cui-E. Hu, and Xiao-Lin Zhou. "Structural and electronic transport properties of a SiC chain encapsulated inside a SiC nanotube: first-principles study." Physical Chemistry Chemical Physics 21, no. 46 (2019): 25548–57. http://dx.doi.org/10.1039/c9cp03945g.

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Silicon carbide (SiC) chains and silicon carbide nanotubes (SiCNTs) have potential applications in more controllable nanoelectronic devices. Here a new hybrid nanostructure with encapsulation of a SiC chain inside a SiCNT is designed and studied.

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Niebelschütz, F., V. Cimalla, K. Brückner, R. Stephan, K. Tonisch, M. A. Hein, and O. Ambacher. "Sensing applications of micro- and nanoelectromechanical resonators." Proceedings of the Institution of Mechanical Engineers, Part N: Journal of Nanoengineering and Nanosystems 221, no. 2 (June 1, 2007): 59–65. http://dx.doi.org/10.1243/17403499jnn100.

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The sensitivity of micro- and nanoscale resonator beams for sensing applications in ambient conditions was investigated. Micro-electromechanical (MEMS) and nanoelectromechanical systems (NEMS) were realized using silicon carbide (SiC) and polycrystalline aluminium nitride (AlN) as active layers on silicon substrates. Resonant frequencies and quality factors in vacuum as well as in air were measured. The sensitivity behaviour under ambient conditions with a mass loading in the range of picogram (pg) was verified and measurements with biological mass loading were performed. In addition, the sensitivity to pressure variations was analysed.

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Zhong, Bo, Wei Wu, Jian Wang, Lian Zhou, Jing Hou, Baojian Ji, Wenhui Deng, Qiancai Wei, Chunjin Wang, and Qiao Xu. "Process Chain for Ultra-Precision and High-Efficiency Manufacturing of Large-Aperture Silicon Carbide Aspheric Mirrors." Micromachines 14, no. 4 (March 27, 2023): 737. http://dx.doi.org/10.3390/mi14040737.

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A large-aperture silicon carbide (SiC) aspheric mirror has the advantages of being light weight and having a high specific stiffness, which is the key component of a space optical system. However, SiC has the characteristics of high hardness and multi-component, which makes it difficult to realize efficient, high-precision, and low-defect processing. To solve this problem, a novel process chain combining ultra-precision shaping based on parallel grinding, rapid polishing with central fluid supply, and magnetorheological finishing (MRF) is proposed in this paper. The key technologies include the passivation and life prediction of the wheel in SiC ultra-precision grinding (UPG), the generation and suppression mechanism of pit defects on the SiC surface, deterministic and ultra-smooth polishing by MRF, and compensation interference detection of the high-order aspheric surface by a computer-generated hologram (CGH). The verification experiment was conducted on a Ø460 mm SiC aspheric mirror, whose initial surface shape error was 4.15 μm in peak-to-valley (PV) and a root-mean-square roughness (Rq) of 44.56 nm. After conducting the proposed process chain, a surface error of RMS 7.42 nm and a Rq of 0.33 nm were successfully obtained. Moreover, the whole processing cycle is only about 216 h, which sheds light on the mass production of large-aperture silicon carbide aspheric mirrors.

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Kareem, Aseel A. "Enhanced thermal and electrical properties of epoxy/carbon fiber–silicon carbide composites." Advanced Composites Letters 29 (January 1, 2020): 2633366X1989459. http://dx.doi.org/10.1177/2633366x19894598.

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The silicon carbide/carbon fiber (SiC/CF) hybrid fillers were introduced to improve the electrical and thermal conductivities of the epoxy resin composites. Results of Fourier transform infrared spectroscopy revealed that the peaks at 3532 and 2850 cm−1 relate to carboxylic acid O–H stretching and aldehyde C–H stretching appearing deeper with an increased volume fraction of SiC. Scanning electron microscopic image shows a better interface bonding between the fiber and the matrix when the volume fraction of SiC particles are increased. As frequency increases from 102 Hz to 106 Hz, dielectric constants decrease slightly. Dissipation factor (tan δ) values keep low and almost constant from 102 Hz to 104 Hz, has a slight increase after 104 Hz, and obtain relaxation peaks approximately between 105 and 106 Hz. A sharp increase in dielectric constant and dissipation factors is observed in epoxy (Ep)/CF composites with 30 vol.% of SiC. The increase in electrical conductivity of composites may result from the increased chain ordering by annealing effect. The electrical conductivities of the Ep/CF composites are decreasing with the increasing volume fraction of SiC. It is attributed to the introduction of insulating SiC. The glass transition temperature ( T g) of the Ep/CF-30 vol.% SiC composite was 352 C, which was higher than other composites. The decomposition temperature at 5% weight loss, decomposition temperature at 10% weight loss, and maximum decomposition temperature of the Ep/CF-30 vol.% SiC composite were about 389.5°C, 410.7°C, and 591°C, respectively, and were higher than pure epoxy and other composites. A higher thermal conductivity of 1.86 W (m K)−1 could be achieved with 30 vol.% SiC/CF hybrid fillers, which is about nine times higher than that of native epoxy resin of 0.202 W (m.K)−1.

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Erick Ogam, Z. E. A Fellah, Henry Otunga, Maxwell Mageto, and Andrew Oduor. "Temperature-Dependent Elastic Constants of Substrates for Manufacture of Mems Devices." Kabarak Journal of Research & Innovation 12, no. 1 (April 25, 2022): 30–35. http://dx.doi.org/10.58216/kjri.v12i1.64.

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We present a comparative computational study of temperature-dependent elastic constants of silicon (Si), silicon carbide (SiC) and diamond as substrates that are commonly used in the manufacture of Micro-Electromechanical Systems (MEMS) devices. Also mentioned is Cd2SnO4, whose ground-state elastic constants were determined just recently for the first time. Si is the dominant substrate used in the manufacture of MEMS devices, owing to its desirable electrical, electronic, thermal and mechanical properties. However, its low hardness, brittleness and inability to work under harsh environment such as high-temperature environment, has limited its use in the manufacture of MEMS like mechanical sensors and bioMEMS. Mechanical sensors are fabricated on SiC and diamond due to their high Young’s moduli as well as high fracture strength, while the bioMEMS are fabricated on polymers. The effect of temperature on the elastic constants of these substrates will help in giving insight into how their performance vary with temperature.

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Ji, Xiaojun, Qiang Xiao, and Jing Chen. "Full-Wave Analysis of Ultrahigh Electromechanical Coupling Surface Acoustic Wave Propagating Properties in a Relaxor Based Ferroelectric Single Crystal/Cubic Silicon Carbide Layered Structure." Modelling and Simulation in Engineering 2017 (2017): 1–6. http://dx.doi.org/10.1155/2017/7078383.

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This paper describes a full-wave analysis of ultrahigh electromechanical coupling surface acoustic wave (SAW) of Y-cut X propagating Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 (YX-PIMNT) single crystals on a cubic silicon carbide (3C-SiC) substrate. There are several eigenmodes including shear horizontal (SH) and Rayleigh SAWs. Based on the finite-element method (FEM), the phase velocity (vp) and coupling factor (K2) of SAWs varying with the top electrode thickness, thickness, and Euler angle (θ) of the YX-PIMNT substrate have been investigated. K2 of SH SAW can reach an extremely high value of 75.9%. The proper control of structural parameters can suppress unwanted responses caused by other modes without deteriorating the coupling factor. The large K2 value of SH SAW and suppression of unwanted responses have highly promising applications in developing ultrawideband and tunable SAW filters. Finally, the performance of 3C-SiC and 6H-SiC as substrates was investigated, and 3C-SiC was identified as a more attractive substrate candidate than 6H-SiC.

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Li, Ning, Jinfu Ding, Liguang Hu, Xiao Wang, Lirong Lu, and Jianmeng Huang. "Preparation, Microstructure and Compressive Properties of Silicone GEL/SiC Composites for Elastic Abrasive." Advanced Composites Letters 27, no. 3 (May 2018): 096369351802700. http://dx.doi.org/10.1177/096369351802700305.

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An elastic abrasive tool based on micropore silica gel was designed and reinforced with silicon carbide (SiC) particle. The abrasive internal structure presents porous chain network structure, and the enhanced particles uniformly distributed in the matrix. The compression performance of modified composites is nonlinear increasing. The experimental results show that the accumulating energy of the self microporous structure is easy to overcome the internal friction in a certain deformation quantity of the materials. When the deformation quantity is large enough, the microporous structure and the chain segment structure of the matrix silica gel affect weakened, so that the properties of the composite decreased. And there is a synergistic relationship between the particles size and the matrix silica gel. That is, when the particle size is near the silicon chain length, the effect of particle enhancement is obvious. When the particle size is small, the effect of particles was reduced because the particles are inlaid between the slots in the silicon chain. On the other hand, when the particle size is larger, the particles are not work in the composites.

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Riviello, André Marques, and Fernando dos Santos Ortega. "Effect of Gel Chemistry on the Machinability of Green SiC Parts Produced by Gelcasting." Materials Science Forum 727-728 (August 2012): 1596–603. http://dx.doi.org/10.4028/www.scientific.net/msf.727-728.1596.

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The growing interesting in the use of silicon carbide in automotive components, biomaterials, energy, among others, which demand the production of parts with complex geometry that are difficult to obtain by conventional compaction techniques, motivates the search for developing new conformation processes. Within this context, this paper investigates the production of pieces of silicon carbide through the gelcasting process and subsequent green machining of these parts. Three systems of monomers were studied: MAM-NVP-MBAM, MAM-PEG (DMA) and MAM-HMAM. The effect of the concentration of monomers, concentration of chemical initiator and the ratio of chain-forming and crosslinker monomers on the cutting force during machining and surface roughness were evaluated. These data are compared with values of flexural strength and hardness of samples produced under the same conditions. Through a statistical analysis it was determined the best formulation for the production of parts of SiC with favorable characteristics of green machining.

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Cheng, Peng, Guan Jun Qiao, Di Chen Li, Ji Qiang Gao, Hong Jie Wang, and Zhi Hao Jin. "RB-SiC Ceramics Derived from the Phenol Resin Added with Starch." Key Engineering Materials 336-338 (April 2007): 1144–47. http://dx.doi.org/10.4028/www.scientific.net/kem.336-338.1144.

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Reaction bonded silicon carbide (RB-SiC) was fabricated by phenol resin, starch, solidified agent and silicon powder through the following steps: first, carbonizing at high temperature for 7-9h, infiltrating silicon at 1450-1600oC for 0.5-2h, and then removing excessive silicon at 1700oC for 0.5h. Scanning electron microscopy and X-ray diffraction were employed to characterize and analyze the microstructures and phase composition of the preforms and the final RB-SiC products. In addition, the effect of carbonization temperature, the amount of starch and solidified agent on strength and apparent porosity of final RB-SiC were also discussed. The results showed that the carbonization process of phenol resin can be divided into three steps: at temperatures from 400oC to 600oC, the structure of polymer changes less; at temperatures from 600oC to 1000oC, the fundamental chain of polymer is destroyed, and inverts to glass-like carbon; at temperatures from 1000oC to 1200oC, with the increasing of carbonization temperature, the structure of glass-like carbon changes into the structure of disorder graphite. And the increased micro-pores could be obtained by adding starch.

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Das, Hrishikesh, Petr Kostelnik, Karel Kocian, Tomas Novak, Martin Domeij, Swapna Sunkari, and Joshua Justice. "(Invited) Challenges in Fabricating and Scaling up Silicon Carbide Wafers and Devices." ECS Meeting Abstracts MA2023-02, no. 35 (December 22, 2023): 1676. http://dx.doi.org/10.1149/ma2023-02351676mtgabs.

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Silicon Carbide is rapidly growing in the power electronics industry. This is fueled to a great degree by the adoption of electric cars and power electronics needed both inside the vehicle and to support the charging infrastructure. This attention from automotive industry comes with a clear spotlight on the cost, quality, and efficiency of SiC power devices. This in turn results in intense pressure and scrutiny to improve yields and reduce defects in every part of the manufacturing chain. There is a wide release and proliferation of Diode and MOSFET devices from various companies in the marketplace. Several companies are investing billions of dollars in capacity expansions driving exponential growth of wafers and devices. In this review, we will discuss the steps and processes of fabricating a SiC wafer including crystal growth, wafering, epitaxy and device fabrication. The process challenges associated with the steps unique to SiC will be highlighted with a perspective on scaling up volumes and the transition to 200mm wafers. New innovations at some of the steps are enabling higher efficiency and output. The impact of these innovations will be presented. In addition, defects at each step of the process will be reviewed along with how they interact with the following steps [1]. Finally, the effect of various processes and defects on devices and reliability will be presented [2,3]. References: H. Das, et. al., Mater. Sci. Forum, Vol. 1004, pp 458-463, (2020) T. Neyer et. al., 2021 IEEE International Reliability Physics Symposium (IRPS), pp. 1-6, (2021) S. Kochoska et. al., Mater. Sci. Forum, Vol. 1062, pp 554-559, (2022)

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Shalygina, Taisiya A., Mikhail S. Rudenko, Ivan V. Nemtsev, Vladimir A. Parfenov, Svetlana Y. Voronina, Igor D. Simonov-Emelyanov, and Polina E. Borisova. "Influence of the Filler Particles’ Surface Morphology on the Polyurethane Matrix’s Structure Formation in the Composite." Polymers 13, no. 22 (November 9, 2021): 3864. http://dx.doi.org/10.3390/polym13223864.

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This article presents the surface morphology effect of silicon carbide (SiC) particles on the polyurethane binder’s structure formation in a dispersed-filled composite. The difference in the morphology and surface relief of filler particles was ensured by the implementation of plasma chemical modification. As a result of this modification, the filler consisted of core-shell particles characterized by a SiC core and a carbon shell (SiC@C), as well as a carbon shell decorated with silicon nanoparticles (SiC@C/SiNP) or nanos (SiC@C/SiNW). The study of the relaxation properties of polyurethane composites has shown that the strongest limiting effect on the molecular mobility of boundary layer’s chain segments is exerted by a highly developed surface with a complex relief of SiC@C/SiNP and SiC@C/SiNW particles. An empirical method was proposed to find the polymer fractions spent on the formation of the boundary, transition and bulk layers of the polymer matrix in the composite. It was shown that the morphology of the filler particles’ surface does not affect the dependence of the boundary layer thickness on the filler’s volume fraction. However, with an increase in the degree of surface development, the boundary layer thickness decreases.

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Reese, Samantha, Kelsey Horowitz, Timothy Remo, and Margaret Mann. "Regional Manufacturing Cost Structures and Supply Chain Considerations for SiC Power Electronics in Medium Voltage Motor Drives." Materials Science Forum 924 (June 2018): 518–22. http://dx.doi.org/10.4028/www.scientific.net/msf.924.518.

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With the growth in wide bandgap (WBG) semiconductors, specifically Silicon Carbide (SiC), the technology has matured enough to highlight a need to understand the drivers of manufacturing cost, regional manufacturing costs, and plant location decisions. Further, ongoing research and investment, necessitates analytical analysis to help inform development of wide bandgap technologies. The paper explores the anticipated device, module, and motor drive cost at volume manufacturing. It additional outlines the current regional contributors to the supply chain and proposes how the base models can be used to evaluate the cost reduction potential of proposed research advances.

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Mihalic, Soares de Sousa, Burzic, Hinterreiter, Stifter, and Fürst. "Morphology and Characterisation of Novolac–LDPE-Based Mixtures as Matrix for Injection Moulded Green Bodies for Bio-Based SiC Ceramics." Ceramics 2, no. 3 (September 9, 2019): 536–50. http://dx.doi.org/10.3390/ceramics2030041.

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This work focuses on the influence of the composition of novolac–LDPE-based mixtures, which serve as a matrix for the green bodies for bio-based silicon carbide (C/Si/SiC) ceramics, on the morphology and the mechanical properties of the green bodies and the ceramics produced thereof. The green bodies were obtained through compounding and injection moulding, and were characterised by scanning electron microscopy (SEM) and mechanical testing. Selected formulations were reinforced with natural fibres, pyrolysed to yield porous carbon templates, and converted into C/Si/SiC ceramics via liquid silicon infiltration. The carbon and ceramic specimens were characterised by light optical microscopy (LOM) and mechanical testing. Without further additives, very coarse morphologies of the novolac–LDPE-based mixtures were obtained, but the miscibility could be improved by the addition of a coupling agent and a lubricant. The pore structure of the carbon specimens was dependent on the phase distribution in the green bodies, and in turn determined the morphology of the C/Si/SiC ceramics. In all steps of the process chain, the morphology had a very strong influence on the mechanical properties. From green bodies with a homogeneous phase distribution, ceramic specimens with a SiC content of up to 75 vol% could be obtained.

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Long, Hu, Na Ren, and Kuang Sheng. "Direct barrier evaluation method for SiC devices with junction barrier Schottky structures demonstrated with quasi-continuous spacing variation." AIP Advances 12, no. 8 (August 1, 2022): 085004. http://dx.doi.org/10.1063/5.0100828.

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Junction barrier Schottky (JBS) structures are extensively used in silicon carbide devices; however, the complex surface composition makes the direct barrier evaluation difficult. To exclude the field-dependent distortion on a barrier for a direct unbiased evaluation in JBS structures, this work proposes a new evaluation method with a physics-based derivation and experimental demonstration, where a batch of JBS diodes are fabricated with a quasi-continuous spacing variation distribution achieved by the spreading etching technique. In addition, a detailed analysis based on the field-dependent barrier is provided. The result illustrates the chain-like activation and its saturation limit with a quantitative estimate in the straggle region. With the capability of the high linearity to exploit the statistical information for analysis stability, the proposed indicator could be a quantitative and versatile reference for designers dealing with nonideal surfaces.

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Sun, Jie, Guotong Xia, Wenjin Yang, Yue Hu, and Weibo Shen. "Microwave-assisted method to degrade phenol using persulfate or hydrogen peroxide catalyzed by Cu-bearing silicon carbide." Water Science and Technology 82, no. 4 (August 6, 2020): 704–14. http://dx.doi.org/10.2166/wst.2020.370.

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Abstract The radical generation properties of hydrogen peroxide and persulfate for phenol degradation were investigated under microwave irradiation using copper-doped silicon carbide (Cu/SiC) composites as catalyst. The results showed that 90% and 70% of phenol and total organic carbon (TOC), respectively, were removed within 7 min. Microwave activation of hydrogen peroxide and sodium persulfate in terms of thermal effects and accelerated electron transfer was analyzed by degradation kinetics and X-ray photoelectron spectroscopy (XPS). The microwave activation of Na2S2O8 demonstrated that the hot spots promote decomposition of persulfate more rapidly and the rate of persulfate decomposition was more than three times the activation rate of a normal heating method. There is a synergistic effect between Cu and microwave radiation, which is highlighted by the H2O2 activation; ·OH was generated due to the redox cycle between Cu(I)/Cu(II) and was responsible for phenol degradation using H2O2. High performance liquid chromatography (HPLC) analysis indicated that hydroxylation and sulfate radicals addition of phenol were the initial oxidation reaction steps of hydrogen peroxide and persulfate, respectively, followed by further oxidation to form short-chain carboxylic acids.

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Statnik, Eugene S., Semen D. Ignatyev, Andrey A. Stepashkin, Alexey I. Salimon, Dilyus Chukov, Sergey D. Kaloshkin, and Alexander M. Korsunsky. "The Analysis of Micro-Scale Deformation and Fracture of Carbonized Elastomer-Based Composites by In Situ SEM." Molecules 26, no. 3 (January 22, 2021): 587. http://dx.doi.org/10.3390/molecules26030587.

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Carbonized elastomer-based composites (CECs) possess a number of attractive features in terms of thermomechanical and electromechanical performance, durability in aggressive media and facile net-shape formability, but their relatively low ductility and strength limit their suitability for structural engineering applications. Prospective applications such as structural elements of micro-electro-mechanical systems MEMS can be envisaged since smaller principal dimensions reduce the susceptibility of components to residual stress accumulation during carbonization and to brittle fracture in general. We report the results of in situ in-SEM study of microdeformation and fracture behavior of CECs based on nitrile butadiene rubber (NBR) elastomeric matrices filled with carbon and silicon carbide. Nanostructured carbon composite materials were manufactured via compounding of elastomeric substance with carbon and SiC fillers using mixing rolling mill, vulcanization, and low-temperature carbonization. Double-edge notched tensile (DENT) specimens of vulcanized and carbonized elastomeric composites were subjected to in situ tensile testing in the chamber of the scanning electron microscope (SEM) Tescan Vega 3 using a Deben microtest 1 kN tensile stage. The series of acquired SEM images were analyzed by means of digital image correlation (DIC) using Ncorr open-source software to map the spatial distribution of strain. These maps were correlated with finite element modeling (FEM) simulations to refine the values of elastic moduli. Moreover, the elastic moduli were derived from unloading curve nanoindentation hardness measurements carried out using a NanoScan-4D tester and interpreted using the Oliver–Pharr method. Carbonization causes a significant increase of elastic moduli from 0.86 ± 0.07 GPa to 14.12 ± 1.20 GPa for the composite with graphite and carbon black fillers. Nanoindentation measurements yield somewhat lower values, namely, 0.25 ± 0.02 GPa and 9.83 ± 1.10 GPa before and after carbonization, respectively. The analysis of fractography images suggests that crack initiation, growth and propagation may occur both at the notch stress concentrator or relatively far from the notch. Possible causes of such response are discussed, namely, (1) residual stresses introduced by processing; (2) shape and size of fillers; and (3) the emanation and accumulation of gases in composites during carbonization.

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Fox, Joseph R., Douglas A. White, Susan M. Oleff, Robert D. Boyer, and Phyllis A. Budinger. "Pyrolysis of Organosilicon Gels to Silicon Carbide." MRS Proceedings 73 (1986). http://dx.doi.org/10.1557/proc-73-395.

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AbstractSol-gel precursors to silicon carbide have been prepared using trifunctional chloro and alkoxysilanes which contain both the silicon and carbon necessary for SiC formation. Crosslinked gels having the ideal formula [RSiO1 5].]n have been synthesized by a hydrolysis/condensation scheme for a series of saturated and unsaturated R groups. The starting gels have been characterized by a variety of elemental analysis, spectroscopic and physical measurements including IR. XRD. TGA.. surface area and pore volume. A particularly powerful method for characterizing these gels is the combination of 13C and 29 Si solid state NMR which can provide information about the degree of crosslinking as well as residual hydroxy/alkoxy content.The controlled pyrolysis of these gels has been used to prepare silicon carbide-containing ceramic products with surface areas in excess of 600m2/gm. The pyrolysis products are best described as a partially crystalline, partially amorphous mixture of β-SiC, silica and carbon. The effect of carbon chain length and the degree of unsaturation in the R group on the composition and surface area of the product has been determined. The origin of the high surface area of the pyrolysis products has been identified and its implications on potential uses of these materials is discussed.

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Mühlbauer, Andreas, Dominik Keiner, Tansu Galimova, and Christian Breyer. "Analysis of production routes for silicon carbide using air as carbon source empowering negative emissions." Mitigation and Adaptation Strategies for Global Change 29, no. 1 (January 2024). http://dx.doi.org/10.1007/s11027-023-10100-6.

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AbstractA rapid defossilisation of the industry sector is required to stop further greenhouse gas emissions and to curb global warming. Additionally, to avoid irreversible consequences caused by climate change, the deployment of negative emission technologies is required to reduce the carbon dioxide (CO2) concentration in Earth’s atmosphere to a sustainable level. A novel approach to store gaseous CO2 from direct air capture facilities in solid silicon carbide (SiC) is presented. A chain of established processes to produce SiC from renewable electricity and air is evaluated in terms of energy and mass balances. Furthermore, possible fields of SiC utilisation are considered. Electricity-based SiC (e-SiC) can serve the growing global market for technical ceramics and can possibly be used to tackle increasing construction sand shortages in the construction industry by partially substituting sand. Calculations of the levelised cost of carbon dioxide removal show that storing ambient CO2 in solid SiC that can be subsequently sold on the world market can eventually create profit. In 2050, a net benefit of 259 €/tCO2 or 631 €/tSiC can be realised if the SiC product is sold at the world market with additional carbon compensation. Therefore, the proposed SiC production chain might be able to challenge conventionally produced SiC, while empowering negative emissions. In 2050, the net CO2 emission potential is limited to about 290 MtCO2/a for technical ceramics, but may reach up to 13.6 GtCO2/a for construction sand. Results show that e-SiC production is economically feasible for technical ceramics but not for construction sand without further process cost decrease. Alternative processes to produce e-SiC are described and evaluated. Future research opportunities are discussed.

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Somdee, Patcharapon, Manjunath Shettar, Natkrita Prasoetsopha, and Manauwar Ali Ansari. "Reinforcing poly(lactic acid)/poly(butylene succinate) biodegradable blends with silicon carbide (SiC): A silane‐coupled approach for enhanced mechanical and thermal performance." Polymer Composites, June 15, 2024. http://dx.doi.org/10.1002/pc.28655.

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AbstractThis study aims to enhance the properties of biodegradable plastics by blending poly(lactic acid) (PLA) as well as poly(butylene succinate) (PBS) with silicon carbide (SiC). SiC content was varied from 10 to 40 phr using an internal mixer, maintaining a 90/10 wt% ratio of PLA/PBS as the matrix. The investigation covered mechanical, thermal properties, chemical structure, and composite morphology. The morphological analysis confirmed even dispersion of SiC within the PLA/PBS matrix, possibly due to improved compatibility via a silane coupling treatment. This resulted in the maximum Young's modulus and impact strength with 40 phr SiC, showing a 40% and 76% enhancement, respectively, compared to pure PLA. Concerning thermal properties, SiC addition influenced the mobility of PLA/PBS molecular chains and crystalline structure, leading to an increase in Tg with higher SiC fractions. However, ΔHm of PLA, PBS, and Xc,PLA decreased, which corresponds to reduced viscosity in the PLA/PBS blend and increased mobility with higher SiC content, as indicated by the elevated MFI value.Highlights Young's modulus increased by 40% and impact strength by 76% than pure PLA. Even SiC dispersion in PLA/PBS, possibly aided by silane coupling. SiC alters chain mobility, boosts crystalline structure, raising Tg. ΔHm and Xc,PLA reduced, suggests reduced viscosity in PLA/PBS at more SiC. Elevated MFI value shows increased chain mobility in PLA/PBS blend at more SiC.

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Baboria, Munish, and Priya Devi. "Role of Nanotechnology in Reinforcement of Polymers." International Journal of Advanced Research in Science, Communication and Technology, September 11, 2021, 57–61. http://dx.doi.org/10.48175/ijarsct-1906.

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Nanotechnology with feasible engineering became a universal technique producing applications in different fields. Nanotechnology use variety of manipulating approach but the consequences and result are innovatory and much bigger then revolutionary. Nanotechnology is now known by many capabilities by using different materials, compositions, and structure on a molecular scale. From the electro-mechanical devices to the medical applications, all these theoretical work is now developed or in construction and with innovative progressing as well. Considering all these, it is clear that the nano tech approach is feasible and optimum and ready to mark the mark. Here we discuss the basic technology behind this and how it is used for the reinforcement of different materials in different cases and their usage. For example, use of Carbon Nanatubes(CNT) or the Silicon carbide (Sic) nanoparticles to give strength, stability or desired electromechanical properties whereas titanium dioxide and Gold Nano particles are good radiation absorbers (fall types)while used as photovoltaic devices and sensitive sensor respectively, This is the highest achievements and future expectations which include different fields s like automobile, aerospace metallurgy, electronics etc.

Journal articles on the topic 'Electromechanical chain, Silicon Carbide (SiC)'

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