Academic literature on the topic 'Electromechanical chain, Silicon Carbide (SiC)'
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Journal articles on the topic "Electromechanical chain, Silicon Carbide (SiC)":
1
Lee, Te-Hao, Swarup Bhunia, and Mehran Mehregany. "Electromechanical Computing at 500°C with Silicon Carbide." Science 329, no. 5997 (September 9, 2010): 1316–18. http://dx.doi.org/10.1126/science.1192511.
Abstract:
Logic circuits capable of operating at high temperatures can alleviate expensive heat-sinking and thermal-management requirements of modern electronics and are enabling for advanced propulsion systems. Replacing existing complementary metal-oxide semiconductor field-effect transistors with silicon carbide (SiC) nanoelectromechanical system (NEMS) switches is a promising approach for low-power, high-performance logic operation at temperatures higher than 300°C, beyond the capability of conventional silicon technology. These switches are capable of achieving virtually zero off-state current, microwave operating frequencies, radiation hardness, and nanoscale dimensions. Here, we report a microfabricated electromechanical inverter with SiC complementary NEMS switches capable of operating at 500°C with ultralow leakage current.
2
Mu, Yi, Cai Cheng, Cui-E. Hu, and Xiao-Lin Zhou. "Structural and electronic transport properties of a SiC chain encapsulated inside a SiC nanotube: first-principles study." Physical Chemistry Chemical Physics 21, no. 46 (2019): 25548–57. http://dx.doi.org/10.1039/c9cp03945g.
Abstract:
Silicon carbide (SiC) chains and silicon carbide nanotubes (SiCNTs) have potential applications in more controllable nanoelectronic devices. Here a new hybrid nanostructure with encapsulation of a SiC chain inside a SiCNT is designed and studied.
3
Niebelschütz, F., V. Cimalla, K. Brückner, R. Stephan, K. Tonisch, M. A. Hein, and O. Ambacher. "Sensing applications of micro- and nanoelectromechanical resonators." Proceedings of the Institution of Mechanical Engineers, Part N: Journal of Nanoengineering and Nanosystems 221, no. 2 (June 1, 2007): 59–65. http://dx.doi.org/10.1243/17403499jnn100.
Abstract:
The sensitivity of micro- and nanoscale resonator beams for sensing applications in ambient conditions was investigated. Micro-electromechanical (MEMS) and nanoelectromechanical systems (NEMS) were realized using silicon carbide (SiC) and polycrystalline aluminium nitride (AlN) as active layers on silicon substrates. Resonant frequencies and quality factors in vacuum as well as in air were measured. The sensitivity behaviour under ambient conditions with a mass loading in the range of picogram (pg) was verified and measurements with biological mass loading were performed. In addition, the sensitivity to pressure variations was analysed.
4
Zhong, Bo, Wei Wu, Jian Wang, Lian Zhou, Jing Hou, Baojian Ji, Wenhui Deng, Qiancai Wei, Chunjin Wang, and Qiao Xu. "Process Chain for Ultra-Precision and High-Efficiency Manufacturing of Large-Aperture Silicon Carbide Aspheric Mirrors." Micromachines 14, no. 4 (March 27, 2023): 737. http://dx.doi.org/10.3390/mi14040737.
Abstract:
A large-aperture silicon carbide (SiC) aspheric mirror has the advantages of being light weight and having a high specific stiffness, which is the key component of a space optical system. However, SiC has the characteristics of high hardness and multi-component, which makes it difficult to realize efficient, high-precision, and low-defect processing. To solve this problem, a novel process chain combining ultra-precision shaping based on parallel grinding, rapid polishing with central fluid supply, and magnetorheological finishing (MRF) is proposed in this paper. The key technologies include the passivation and life prediction of the wheel in SiC ultra-precision grinding (UPG), the generation and suppression mechanism of pit defects on the SiC surface, deterministic and ultra-smooth polishing by MRF, and compensation interference detection of the high-order aspheric surface by a computer-generated hologram (CGH). The verification experiment was conducted on a Ø460 mm SiC aspheric mirror, whose initial surface shape error was 4.15 μm in peak-to-valley (PV) and a root-mean-square roughness (Rq) of 44.56 nm. After conducting the proposed process chain, a surface error of RMS 7.42 nm and a Rq of 0.33 nm were successfully obtained. Moreover, the whole processing cycle is only about 216 h, which sheds light on the mass production of large-aperture silicon carbide aspheric mirrors.
5
Kareem, Aseel A. "Enhanced thermal and electrical properties of epoxy/carbon fiber–silicon carbide composites." Advanced Composites Letters 29 (January 1, 2020): 2633366X1989459. http://dx.doi.org/10.1177/2633366x19894598.
Abstract:
The silicon carbide/carbon fiber (SiC/CF) hybrid fillers were introduced to improve the electrical and thermal conductivities of the epoxy resin composites. Results of Fourier transform infrared spectroscopy revealed that the peaks at 3532 and 2850 cm−1 relate to carboxylic acid O–H stretching and aldehyde C–H stretching appearing deeper with an increased volume fraction of SiC. Scanning electron microscopic image shows a better interface bonding between the fiber and the matrix when the volume fraction of SiC particles are increased. As frequency increases from 102 Hz to 106 Hz, dielectric constants decrease slightly. Dissipation factor (tan δ) values keep low and almost constant from 102 Hz to 104 Hz, has a slight increase after 104 Hz, and obtain relaxation peaks approximately between 105 and 106 Hz. A sharp increase in dielectric constant and dissipation factors is observed in epoxy (Ep)/CF composites with 30 vol.% of SiC. The increase in electrical conductivity of composites may result from the increased chain ordering by annealing effect. The electrical conductivities of the Ep/CF composites are decreasing with the increasing volume fraction of SiC. It is attributed to the introduction of insulating SiC. The glass transition temperature ( T g) of the Ep/CF-30 vol.% SiC composite was 352 C, which was higher than other composites. The decomposition temperature at 5% weight loss, decomposition temperature at 10% weight loss, and maximum decomposition temperature of the Ep/CF-30 vol.% SiC composite were about 389.5°C, 410.7°C, and 591°C, respectively, and were higher than pure epoxy and other composites. A higher thermal conductivity of 1.86 W (m K)−1 could be achieved with 30 vol.% SiC/CF hybrid fillers, which is about nine times higher than that of native epoxy resin of 0.202 W (m.K)−1.
6
Erick Ogam, Z. E. A Fellah, Henry Otunga, Maxwell Mageto, and Andrew Oduor. "Temperature-Dependent Elastic Constants of Substrates for Manufacture of Mems Devices." Kabarak Journal of Research & Innovation 12, no. 1 (April 25, 2022): 30–35. http://dx.doi.org/10.58216/kjri.v12i1.64.
Abstract:
We present a comparative computational study of temperature-dependent elastic constants of silicon (Si), silicon carbide (SiC) and diamond as substrates that are commonly used in the manufacture of Micro-Electromechanical Systems (MEMS) devices. Also mentioned is Cd2SnO4, whose ground-state elastic constants were determined just recently for the first time. Si is the dominant substrate used in the manufacture of MEMS devices, owing to its desirable electrical, electronic, thermal and mechanical properties. However, its low hardness, brittleness and inability to work under harsh environment such as high-temperature environment, has limited its use in the manufacture of MEMS like mechanical sensors and bioMEMS. Mechanical sensors are fabricated on SiC and diamond due to their high Young’s moduli as well as high fracture strength, while the bioMEMS are fabricated on polymers. The effect of temperature on the elastic constants of these substrates will help in giving insight into how their performance vary with temperature.
7
Ji, Xiaojun, Qiang Xiao, and Jing Chen. "Full-Wave Analysis of Ultrahigh Electromechanical Coupling Surface Acoustic Wave Propagating Properties in a Relaxor Based Ferroelectric Single Crystal/Cubic Silicon Carbide Layered Structure." Modelling and Simulation in Engineering 2017 (2017): 1–6. http://dx.doi.org/10.1155/2017/7078383.
Abstract:
This paper describes a full-wave analysis of ultrahigh electromechanical coupling surface acoustic wave (SAW) of Y-cut X propagating Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 (YX-PIMNT) single crystals on a cubic silicon carbide (3C-SiC) substrate. There are several eigenmodes including shear horizontal (SH) and Rayleigh SAWs. Based on the finite-element method (FEM), the phase velocity (vp) and coupling factor (K2) of SAWs varying with the top electrode thickness, thickness, and Euler angle (θ) of the YX-PIMNT substrate have been investigated. K2 of SH SAW can reach an extremely high value of 75.9%. The proper control of structural parameters can suppress unwanted responses caused by other modes without deteriorating the coupling factor. The large K2 value of SH SAW and suppression of unwanted responses have highly promising applications in developing ultrawideband and tunable SAW filters. Finally, the performance of 3C-SiC and 6H-SiC as substrates was investigated, and 3C-SiC was identified as a more attractive substrate candidate than 6H-SiC.
8
Li, Ning, Jinfu Ding, Liguang Hu, Xiao Wang, Lirong Lu, and Jianmeng Huang. "Preparation, Microstructure and Compressive Properties of Silicone GEL/SiC Composites for Elastic Abrasive." Advanced Composites Letters 27, no. 3 (May 2018): 096369351802700. http://dx.doi.org/10.1177/096369351802700305.
Abstract:
An elastic abrasive tool based on micropore silica gel was designed and reinforced with silicon carbide (SiC) particle. The abrasive internal structure presents porous chain network structure, and the enhanced particles uniformly distributed in the matrix. The compression performance of modified composites is nonlinear increasing. The experimental results show that the accumulating energy of the self microporous structure is easy to overcome the internal friction in a certain deformation quantity of the materials. When the deformation quantity is large enough, the microporous structure and the chain segment structure of the matrix silica gel affect weakened, so that the properties of the composite decreased. And there is a synergistic relationship between the particles size and the matrix silica gel. That is, when the particle size is near the silicon chain length, the effect of particle enhancement is obvious. When the particle size is small, the effect of particles was reduced because the particles are inlaid between the slots in the silicon chain. On the other hand, when the particle size is larger, the particles are not work in the composites.
9
Riviello, André Marques, and Fernando dos Santos Ortega. "Effect of Gel Chemistry on the Machinability of Green SiC Parts Produced by Gelcasting." Materials Science Forum 727-728 (August 2012): 1596–603. http://dx.doi.org/10.4028/www.scientific.net/msf.727-728.1596.
Abstract:
The growing interesting in the use of silicon carbide in automotive components, biomaterials, energy, among others, which demand the production of parts with complex geometry that are difficult to obtain by conventional compaction techniques, motivates the search for developing new conformation processes. Within this context, this paper investigates the production of pieces of silicon carbide through the gelcasting process and subsequent green machining of these parts. Three systems of monomers were studied: MAM-NVP-MBAM, MAM-PEG (DMA) and MAM-HMAM. The effect of the concentration of monomers, concentration of chemical initiator and the ratio of chain-forming and crosslinker monomers on the cutting force during machining and surface roughness were evaluated. These data are compared with values of flexural strength and hardness of samples produced under the same conditions. Through a statistical analysis it was determined the best formulation for the production of parts of SiC with favorable characteristics of green machining.
10
Cheng, Peng, Guan Jun Qiao, Di Chen Li, Ji Qiang Gao, Hong Jie Wang, and Zhi Hao Jin. "RB-SiC Ceramics Derived from the Phenol Resin Added with Starch." Key Engineering Materials 336-338 (April 2007): 1144–47. http://dx.doi.org/10.4028/www.scientific.net/kem.336-338.1144.
Abstract:
Reaction bonded silicon carbide (RB-SiC) was fabricated by phenol resin, starch, solidified agent and silicon powder through the following steps: first, carbonizing at high temperature for 7-9h, infiltrating silicon at 1450-1600oC for 0.5-2h, and then removing excessive silicon at 1700oC for 0.5h. Scanning electron microscopy and X-ray diffraction were employed to characterize and analyze the microstructures and phase composition of the preforms and the final RB-SiC products. In addition, the effect of carbonization temperature, the amount of starch and solidified agent on strength and apparent porosity of final RB-SiC were also discussed. The results showed that the carbonization process of phenol resin can be divided into three steps: at temperatures from 400oC to 600oC, the structure of polymer changes less; at temperatures from 600oC to 1000oC, the fundamental chain of polymer is destroyed, and inverts to glass-like carbon; at temperatures from 1000oC to 1200oC, with the increasing of carbonization temperature, the structure of glass-like carbon changes into the structure of disorder graphite. And the increased micro-pores could be obtained by adding starch.
Dissertations / Theses on the topic "Electromechanical chain, Silicon Carbide (SiC)":
1
Taghia, Bouazza. "Modélisation et optimisation paramétrique d'une chaine électromécanique pour la prévention des décharges partielles dans un actionneur aéronautique." Electronic Thesis or Diss., Toulouse, INPT, 2023. http://www.theses.fr/2023INPT0121.
Abstract:
Actuellement, la distribution à bord des aéronefs de l’énergie électrique en haute tension continue (HVDC) et l'utilisation de technologies de rupture telle que l’utilisation des semi-conducteurs à grand gap (SiC et GaN) dans les convertisseurs statiques sont parmi les leviers indispensables pour le développement de l’avion plus électrique. L'utilisation des semi-conducteurs à grand gap augmente la densité massique des convertisseurs ; cependant, leurs commutations rapides (quelques dizaines de ns) favorisent la création de surtensions dues aux phénomènes de propagation et de réflexion le long des harnais. Les surtensions peuvent dépasser le double de la tension du bus DC ; un tel niveau de tension, combiné avec les contraintes aéronautiques (basse pression et/ou haute température) peut engendrer des phénomènes de décharges partielles (DP) pouvant causer une dégradation prématurée du système d’isolation électrique (SIE). Dans ce contexte, les travaux de cette thèse concernent la fiabilité d’une chaine électromécanique (association : onduleur à MOSFET-SiC + harnais long + machine électrique) alimentée par le réseau HVDC 540V ; ils visent à intégrer la prévention des DP dans le bobinage d’une machine électrique dès les premières phases de conception. D’une part, ces travaux de recherche visent à maitriser les surtensions, et pour cela nous proposons un modèle prédictif et large bande fréquentielle d’une chaine électromécanique triphasée ; sa bonne précision validée expérimentalement permet une meilleure compréhension des phénomènes de surtension, notamment, vis-à-vis de la commutation rapide de la technologie SiC. Le modèle proposé adopte une résolution fréquentielle à faible temps de calcul, ce qui est adapté à une utilisation dans des outils de conception par optimisation. D’autre part, pour pouvoir tenir compte des DP dès la phase de conception, il est essentiel de connaitre le seuil d’apparition des décharges partielles (SADP) en fonction des paramètres de SIE (matériaux isolants, épaisseur) et des paramètres environnementaux (pression, température) : pour ce faire, nous proposons d’améliorer la formule analytique de DAKIN de calcul du SADP dans une approche regroupant des données bibliographiques et les résultats d’une vaste investigation expérimentaleCurrently, the distribution of electrical energy aboard aircraft with high voltage direct current (HVDC) and the use of disruptive technologies such as wide bandgap (WBG) semiconductors (SiC and GaN) in static converters are among essential levers for the development of more electric aircraft. Using WBG semiconductors increases the mass density of converters; however, their fast switching (a few tens of ns) induces the creation of overvoltage due to propagation and reflection phenomena along harnesses. Overvoltage can exceed twice the voltage of the DC bus: such voltage level combined with aeronautical constraints (low pressure and/or high temperature) can generate partial discharges (PD) phenomena, which causes a premature degradation of electrical insulation systems (EIS). In this context, this PhD work focuses on the reliability of an electromechanical chain (association: MOSFET-SiC inverter + long harness + electrical machine) supplied by the HVDC 540V network; they aim to prevent the presence of PD in the winding of electrical machine from the early stage of design. On the one hand, this research aims to manage overvoltage, and for this, we develop a predictive, wide-band frequency model of a three-phase electromechanical chain; its good precision, experimentally validated, allows a better understanding of overvoltage phenomena, in particular, according to the fast switching of SiC technology. The proposed model adopts a frequency resolution with low computation time, which is suitable for use in design tools based on optimization algorithms. On the other hand, to be able to take PD into account from the first design stages, it is essential to integrate the knowledge of the partial discharges inception voltage (PDIV) according to the EIS parameters (insulating materials, thickness) and environmental parameters (pressure, temperature). In this scope, we propose to improve PDIV DAKIN's analytical formula using bibliographic data together with the results of a vast experiential investigation
2
Tian, Ye. "SiC Readout IC for High Temperature Seismic Sensor System." Doctoral thesis, KTH, Integrerade komponenter och kretsar, 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-213969.
Abstract:
Over the last decade, electronics operating at high temperatures have been increasingly demanded to support in situ sensing applications such as automotive, deep-well drilling and aerospace. However, few of these applications have requirements above 460 °C, as the surface temperature of Venus, which is a specific target for the seismic sensing application in this thesis. Due to its wide bandgap, Silicon Carbide (SiC) is a promising candidate to implement integrated circuits (ICs) operating in such extreme environments. In this thesis, various analog and mixed-signal ICs in 4H-SiC bipolar technology for high-temperature sensing applications are explored, in which the device performance variation over temperatures are considered. For this purpose, device modeling, circuit design, layout design, and device/circuit characterization are involved. In this thesis, the circuits are fabricated in two batches using similar technologies. In Batch 1, the first SiC sigma-delta modulator is demonstrated to operate up to 500 °C with a 30 dB peak SNDR. Its building blocks including a fully-differential amplifier, an integrator and a comparator are characterized individually to investigate the modulator performance variation over temperatures. In the succeeding Batch 2, a SiC electromechanical sigma-delta modulator is designed with a chosen Si capacitive sensor for seismic sensing on Venus. Its building blocks including a charge amplifier, a multiplier and an oscillator are designed. Compared to Batch 1, a smaller transistor and two metal-interconnects are used to implement higher integration ICs in Batch 2. Moreover, the first VBIC-based compact model featured with continuous-temperature scalability from 27 to 500 °C is developed based on the SiC transistor in Batch 1, in order to optimize the design of circuits in Batch 2. The demonstrated performance of ICs in Batch 1 show the feasibility to further develop the SiC readout ICs for seismic sensor system operating on Venus.QC 20170911
Conference papers on the topic "Electromechanical chain, Silicon Carbide (SiC)":
1
Feng, X. L., M. H. Matheny, R. B. Karabalin, C. A. Zorman, M. Mehregany, and M. L. Roukes. "Silicon carbide (SiC) top-down nanowire electromechanical resonators." In TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference. IEEE, 2009. http://dx.doi.org/10.1109/sensor.2009.5285595.
2
Reese, Samantha, Margaret Mann, Timothy Remo, and Kelsey Horowitz. "Regional Manufacturing Cost Structures and Supply Chain Considerations for Medium Voltage Silicon Carbide Power Applications." In ASME 2018 13th International Manufacturing Science and Engineering Conference. American Society of Mechanical Engineers, 2018. http://dx.doi.org/10.1115/msec2018-6601.
Abstract:
Bottoms-up cost analysis has been a mainstay of commoditized industry and manufacturing processes for years, however a holistic objective supply chain analysis to inform research and investment in the development of early stage technologies has not. The potential for rapid adoption of wide bandgap (WBG) semiconductors, specifically silicon carbide (SiC), highlights a need to understand the drivers of location-specific manufacturing cost, global supply chains, and plant location decisions. Further, ongoing research and investment, necessitates analytical analysis to help inform the roadmap of SiC technologies. In collaboration with PowerAmerica the project explores the bottoms-up cost analysis of wafers, devices, modules, and variable frequency motor drives at the anticipated manufacturing levels. Leveraging these models, it outlines how the cost reduction potential of proposed research advances can be quantified.
3
Kazinczi, R., J. R. Mollinger, and A. Bossche. "Down-Scale Problems of Resonant Mode SiC Devices." In ASME 2000 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2000. http://dx.doi.org/10.1115/imece2000-1095.
Abstract:
Abstract Silicon carbide (SiC) is a promising candidate to replace conventional silicon based electronics and micro electromechanical devices in various applications. The present study characterizes material properties of SiC thin films and addresses reliability issues focused on down-scaled resonant mode future devices. The Young’s modulus was calculated from resonant measurements on SiC cantilever beams. The long-term stability of the resonator was studied in various environments. Thin cantilevers operating in air and in humid air exhibit stiffening effect due to surface oxidation. Mechanical shocks generate cracks in the surface oxide layer which results in drop of the resonance frequency. This unstable behaviour leads to failure of the resonant mode devices. Non-oxidising media, such as nitrogen and argon enhances the stability, which offers convenient packaging solutions.
4
Shen, Haoting, M. Tanjidur Rahman, Navid Asadizanjani, Mark Tehranipoor, and Swarup Bhunia. "Coating-Based PCB Protection against Tampering, Snooping, EM Attack, and X-ray Reverse Engineering." In ISTFA 2018. ASM International, 2018. http://dx.doi.org/10.31399/asm.cp.istfa2018p0290.
Abstract:
Abstract In the last decades, the supply chain of printed circuit boards (PCBs) becomes distributed with growing complexity of PCB designs and the economic trend of outsourcing the PCB manufacturing. This makes the PCBs more vulnerable to security attacks, such as tampering, snooping, and electromagnetic (EM) attacks. Because of the large feature size of PCBs (compared to integrated circuits), it is challenging to protect the PCBs from those attacks or proof the suspected attacks. For the same reason, PCBs are vulnerable to non-invasive reverse engineering by X-ray tomography as well. In this paper, we propose a novel silicon carbide (SiC) coating technique to provide passive protection for PCBs from in-field tampering, snooping and EM attacks. In addition, capacitive sensors are designed based on the SiC coating, offering active defense against those attacks. The coating and sensors can be implemented on PCBs in cost-efficient ways and the area overheads are minimized. The insulating coating also allows an extra tungsten-based painting to be applied to prevent the X-ray reverse engineering.
5
Wang, B. X., and C. Y. Zhao. "Topological Phonon Polaritons for Thermal Radiation Control." In ASME 2019 6th International Conference on Micro/Nanoscale Heat and Mass Transfer. American Society of Mechanical Engineers, 2019. http://dx.doi.org/10.1115/mnhmt2019-4002.
Abstract:
Abstract Topological phonon polaritons (TPhPs) are highly localized edge modes that can achieve a strong confinement of electromagnetic waves and are topologically protected to be immune to impurities and disorder. In this paper, we theoretically study the topological phonon polaritons (TPhPs) in one-dimensional (1D) dimerized silicon carbide (SiC) nanoparticle (NP) chains, as an extension of the celebrated Su-Schrieffer-Heeger (SSH) model. We analytically calculate the band structure and complex Zak phase for such chains by taking all near-field and far-field interactions into account. It is found that the 1D dimerized chain supports nontrivial topological states as long as the dimeriza-tion parameter β > 0.5 and the long-range interactions are weak, although the system is non-Hermitian. By analyzing the distribution of eigenmodes and their participation ratios (PRs), we comprehensively study the effects of disorder on the band structure and midgap modes. We reveal that such TPhPs are very robust under high-degree disorders and even enhanced by the disorder. Through a finite-size scaling analysis, we show this enhancement can be attributed to Anderson localization scheme. These topological phonon polaritonic states provide an efficient interface for thermal radiation control in the mid-infrared.
6
Kramb, Marc, and Rolf Slatter. "The role of magnetic sensors in the hybridisation and electrification of vehicles." In 19th International Congress of Metrology (CIM2019), edited by Sandrine Gazal. Les Ulis, France: EDP Sciences, 2019. http://dx.doi.org/10.1051/metrology/201926007.
Abstract:
Electrical currents need to be measured in a wide variety of different applications in the field of power electronics. However, the requirements for these measurement devices are becoming steadily more demanding regarding accuracy, size and especially bandwidth. In order to increase the power density of power electronics, as particularly important in the field of electromobility, there is a clear causal chain. Soft switching leads to higher efficiency and higher frequencies, which enable smaller dimensions for a given power output. Higher switching frequencies allow the size of magnetic components to be reduced significantly, resulting in more compact and lighter designs. This trend is now being reinforced by use of new wide bandgap semiconductor materials like silicon carbide (SiC) and gallium nitride (GaN), as their low on-resistances and low parasitic capacitances reduce switching losses. Conventional current sensor solutions, e.g. hallor shunt based sensors exhibit a limited bandwidth, typically less than 250 kHz. Other current sensors, like those based on the Rogowski-Coil, are capable of highly dynamic current measurement, but are significantly more expensive, larger and hence not suitable for large series applications. Furthermore, Rogowski-Coils are only capable of measuring alternating currents (AC), which prevents their use in applications where DC currents must also be measured. In order to meet the above mentioned requirements, magnetoresistive (MR) current sensors are ideally suited due to the fact that the bandwidth of the magnetoresistive effect extends up into the GHz-range. This paper describes the principle of operation and main performance characteristics of highly integrated MR current sensors and describes their benefits compared to other types of current sensor, in particular with regard to applications in the hybridisation and electrification of vehicles.