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Journal articles on the topic 'Electroluminescence'

Author: Grafiati
Published: 4 June 2021
Last updated: 29 July 2024

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1

Ando, Masanori, Chie Hosokawa, Ping Yang, and Norio Murase. "Electroluminescence of Hybrid Self-Organised Fibres Incorporating CdTe Quantum Dots." Australian Journal of Chemistry 65, no. 9 (2012): 1257. http://dx.doi.org/10.1071/ch12127.

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We demonstrated electroluminescence from hybrid 1D glass fibres incorporating CdTe quantum dots with a thin SiO2 overlayer which contains CdS-like clusters. The self-organised fibres, prepared by refluxing precursor nanowires, exhibited red electroluminescence on Au interdigitated array electrodes at room temperature. Although fluctuation with time was observed in the electroluminescence, relatively low threshold electric field (2.6 × 106 V m–1) suggests that the CdTe quantum dots-based hybrid fibres are expected to be applied to low voltage driven electroluminescent devices.
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2

Xiao, T., G. Liu, M. Adams, and A. H. Kitai. "Green Zn2SiO4:Mn thin-film electroluminescence on silicon substrates." Canadian Journal of Physics 74, no. 3-4 (March 1, 1996): 132–35. http://dx.doi.org/10.1139/p96-020.

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Bright electroluminescence has been achieved on silicon substrates for the first time using Zn2SiO4:Mn thin films that were RF magnetron sputtered. A brightness of over 16 foot lambert (fL) was observed at 400 Hz and 260 V, with a steep brightness–voltage behaviour characteristic of ZnS electroluminescence. A multiplexed electroluminescent display is now feasible using Zn2SiO4:Mn.
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3

Михайлова, М. П., Э. В. Иванов, Л. В. Данилов, Р. В. Левин, И. А. Андреев, Е. В. Куницына, and Ю. П. Яковлев. "Электролюминесценция в гетероструктурах n-GaSb/InAs/ p-GaSb с одиночной квантовой ямой, выращенных методом МОГФЭ." Физика и техника полупроводников 53, no. 1 (2019): 50. http://dx.doi.org/10.21883/ftp.2019.01.46986.8958.

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AbstractThe electroluminescent characteristics of a type-II n -GaSb/ n -InAs/ p -GaSb heterostructure with a single deep quantum well grown by metalorganic vapor-phase epitaxy are investigated. The energy-band diagram of the structure and the positions of the electron and heavy-hole energy levels are calculated. The analysis of the current–voltage characteristics demonstrates that the dark current in the structure under study flows via the tunneling mechanism. Intense electroluminescence characterized by a weak temperature dependence was observed in the spectral range of 3–4 μm at T = 77 and 300 K. The main electroluminescence band ( h ν = 0.40 eV at 77 K) corresponds to direct radiative transitions between electrons from level E _1 in the InAs quantum well and heavy holes from the continuum at the n -GaSb/ n -InAs heterointerface. A low-intensity electroluminescence band at h ν = 0.27 eV ( T = 77 K) originates from indirect (tunneling) transitions from the first electron level in the quantum well to the second level of heavy holes localized in the valence-band “notch” at the n -InAs/ p -GaSb heterointerface.
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4

Semakova A. A., Ruzhevich M. S., Romanov V. V., Bazhenov N. L., Mynbaev K. D., and Moiseev K. D. "Stimulated emission in the InAs/InAsSb/InAsSbP heterostructures with asymmetric electronic confinement." Semiconductors 56, no. 9 (2022): 659. http://dx.doi.org/10.21883/sc.2022.09.54131.9925.

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The electroluminescent characteristics of the InAs/InAs1-ySby/InAsSbP asymmetric light-emitting diode heterostructures with high InSb mole fraction in the active region (y>0.09) in the temperature range 4.2-300 K have been studied. Stimulated emission was achieved in the wavelength range 4.1-4.2 μm at low temperatures (T<30 K). It was found that the electroluminescence spectra were formed as a result of the superposition of contributions from different channels of radiative recombination of charge carriers near the type II heterointerface. The effect of the quality of the type II InAsSb/InAsSbP heterojunction on the radiative interface transitions with an increase in the content of InSb in the ternary solid solution is considered. Keywords: heterojunctions, InAs, antimonides, electroluminescence, light-emitting diodes.
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5

Parkhomenko Ya. A., Ivanov E. V., and Moiseev K. D. "Radiative recombination in the InAs/InSb type II broken-gap heterojucntion with quantum dots at the interface." Physics of the Solid State 65, no. 4 (2023): 628. http://dx.doi.org/10.21883/pss.2023.04.56006.11.

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The electroluminescent properties of narrow-gap type II InAs/InSb/InAs heterostructures containing a single layer of InSb quantum dots placed at the interface of the p-n junction in InAs were studied. The features of the electroluminescence spectra depending on the surface density of nanoobjects at a broken-gap type II heterointerface were investigated both at forward and reverse bias. When applying a reverse bias to the heterostructures under study, the suppression of negative interband luminescence and the dominance of interface recombination transitions at the InSb/InAs type II heterojunction were observed at room temperature. The radiation, which corresponded to recombination transitions involving localized states of InSb quantum dots, was recorded at low temperature. Keywords: quantum dots, electroluminescence, InAs, InSb, type II heterojunction.
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6

Miyake, Seiya, Toshinobu Inagaki, Tatsuo Mori, and Teruyosi Mizutani. "Electroluminescence and Electrical Properties of Organic Electroluminescent Diodes." IEEJ Transactions on Fundamentals and Materials 115, no. 12 (1995): 1257–62. http://dx.doi.org/10.1541/ieejfms1990.115.12_1257.

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7

Pappalardo, R. G. "Photo‐Electroluminescence in Commercial Thin‐Film Electroluminescent Panels." Journal of The Electrochemical Society 137, no. 11 (November 1, 1990): 3469–74. http://dx.doi.org/10.1149/1.2086252.

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8

Wang, Junling, Zhuan Li, and Chunmei Liu. "A New Kind of Blue Hybrid Electroluminescent Device." Journal of Nanoscience and Nanotechnology 16, no. 4 (April 1, 2016): 3763–67. http://dx.doi.org/10.1166/jnn.2016.11816.

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Bright blue Electroluminescence come from a ITO/BBOT doped silica (6×10−3 M) made by a sol–gel method/Al driven by AC with 500 Hz at different voltages and Gaussian analysis under 55 V showed that blue emission coincidenced with typical triple emission from BBOT. This kind of device take advantage of organics (BBOT) and inorganics (silica). Electroluminescence from a singlelayered sandwiched device consisting of blue fluorescent dye 2,5-bis (5-tert-butyl-2-benzoxazolyl) thiophene (BBOT) doped silica made by sol–gel method was investigated. A number of concentrations of hybrid devices were prepared and the maxium concentration was 6×10−3 M. Blue electroluminescent (EL) always occurred above a threshold field 8.57×105 V/cm (30 V) at alternating voltage at 500 HZ. The luminance of the devices increased with the concentration of doped BBOT, but electroluminescence characteristics were different from a single molecule’s photoluminescence properties of triple peaks. When analyzing in detail direct-current electroluminescence devices of pure BBOT, a single peak centered at 2.82 eV appeared with the driven voltage increase, which is similar to the hybrid devices. Comparing Gaussian decomposition date between two kinds of devices, the triple peak characteristic of BBOT was consistent. It is inferred that BBOT contributed EL of the hybrid devices mainly and silica may account for a very small part. Meanwhile the thermal stability of matrix silica was measured by Thermal Gravity-Mass Spectroscopy (TG-MS). There is 12 percent weight loss from room temperature to 1000 °C and silica has about 95% transmittance. So the matric silica played an important role in thermal stability and optical stability for BBOT. In addition, this kind of blue electroluminescence device can take advantages of organic materials BBOT and inorganic materials silica. This is a promising way to enrich EL devices, especially enriching inorganic EL color at a low cost.
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9

Kyômen, Tôru, Sayaka Hasuko, Minoru Hanaya, and Hiroshi Takashima. "Electroluminescence of a Multilayer in which Thin Films of NaNbO3:Pr Phosphor and SnO2:Sb Transparent Conductor Are Alternately Stacked." Key Engineering Materials 643 (May 2015): 33–37. http://dx.doi.org/10.4028/www.scientific.net/kem.643.33.

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Oxide inorganic electroluminescent device in which thin films of Pr-doped NaNbO3 phosphor and Sb-doped SnO2 transparent conductor are alternately stacked was prepared by sol-gel and spin-coating methods. Red electroluminescence was observed due to f-f transitions of Pr3+ ions by applying 5-kHz ac voltages to the device. The luminance was 1.0 cd m−2 at 25 V ac and5.0 cd m−2 at 34 V ac.
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10

Feres, Flavio H., Lucas Fugikawa Santos, and Giovani Gozzi. "Temperature and Electric Field Influence on the Electrical Properties of Light-Emitting Devices Comprising PEDOT:PSS/GPTMS/Zn2SIO4:Mn Composites." MRS Advances 3, no. 33 (2018): 1883–89. http://dx.doi.org/10.1557/adv.2018.179.

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ABSTRACTIn the present study, we analyze the influence of temperature and active layer thickness on the electrical properties of electroluminescent devices comprising a polymeric conductive blend (poly(3,4 ethylenedioxythiophene):polystyrene sulfonate, PEDOT:PSS), an inorganic electroluminescent material (manganese doped zinc orthosilicate, Zn2SiO4:Mn) and an organosilicon material (3-glicidoxypropyltrimethoxysilane, GPTMS), manufactured at different weight ratios of the component materials. The devices were obtained by depositing the active layer by drop-casting onto ITO-coated (RF-sputtering) glass substrates and thermally evaporating gold top electrodes in high vacuum. The results show that 90 wt% Zn2SiO4:Mn is required to observe high electroluminescence from the fabricated devices and that the optimum performance (turn-on voltage of 33 V, luminous efficacy of 24 cd/A and maximum luminance of almost 2000 cd/m2) was achieve for a (9.5/0.5/90) (GPTMS/PEDOT:PSS/Zn2SiO4:Mn) weight ratio. The device turn-on voltage found to be as proportional to the thickness of the active layer, indicating that the electroluminescence occurs by a field-effect mechanism. The temperature variation in the 100-300 K range allowed us to develop a theoretical model for the device operation, where the charge carrier transport in the active layer is well described by the variable range hopping model, with luminous efficacy nearby independent of the temperature.
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11

Gurin, N. T., and O. Yu Sabitov. "Electroluminescence parameters of thin-film ZnS: Mn electroluminescent devices." Technical Physics 51, no. 8 (August 2006): 1012–24. http://dx.doi.org/10.1134/s106378420608010x.

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12

Baukol, B. A., J. C. Hitt, P. D. Keir, and J. F. Wager. "Electroluminescence thermal quenching in SrS:Cu thin-film electroluminescent devices." Applied Physics Letters 76, no. 2 (January 10, 2000): 185–87. http://dx.doi.org/10.1063/1.125697.

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13

Velasco, Jaime González. "Electroluminescence." Electroanalysis 3, no. 4-5 (May 1991): 261–71. http://dx.doi.org/10.1002/elan.1140030405.

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14

van Gorkom, Hans J. "Electroluminescence." Photosynthesis Research 48, no. 1-2 (May 1996): 107–16. http://dx.doi.org/10.1007/bf00041001.

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15

Tadesse, Melkie Getnet, and Jörn Felix Lübben. "Recent Progress in Self-Healable Hydrogel-Based Electroluminescent Devices: A Comprehensive Review." Gels 9, no. 3 (March 21, 2023): 250. http://dx.doi.org/10.3390/gels9030250.

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Flexible electronics have gained significant research attention in recent years due to their potential applications as smart and functional materials. Typically, electroluminescence devices produced by hydrogel-based materials are among the most notable flexible electronics. With their excellent flexibility and their remarkable electrical, adaptable mechanical and self-healing properties, functional hydrogels offer a wealth of insights and opportunities for the fabrication of electroluminescent devices that can be easily integrated into wearable electronics for various applications. Various strategies have been developed and adapted to obtain functional hydrogels, and at the same time, high-performance electroluminescent devices have been fabricated based on these functional hydrogels. This review provides a comprehensive overview of various functional hydrogels that have been used for the development of electroluminescent devices. It also highlights some challenges and future research prospects for hydrogel-based electroluminescent devices.
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16

Rau, U., T. C. M. Müller, T. M. H. Tran, B. E. Pieters, and A. Gerber. "Electroluminescence of Cu(In,Ga)Se2 solar cells and modules." MRS Proceedings 1538 (2013): 133–44. http://dx.doi.org/10.1557/opl.2013.979.

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ABSTRACTFundamental aspects of (electro-)luminescence of Cu(In,Ga)Se2 solar cells and modules are investigated by means of spectrally and spatially resolved measurements. The validity of the reciprocity relation between spectrally resolved electroluminescence emission and photovoltaic quantum efficiency is verified for the case of industrially produced ZnO/CdS/Cu(In,Ga)Se2 heterojunction solar cells. Further we find that photo- and electroluminescent emission in these devices obey a superposition principle only in a limited range of the applied electrical or illumination bias. This range depends on the light soaking history of the sample and extends up to an injected current density of approximately 15 mAcm-2 after 3 h of light soaking at a temperature of 400 K. In the state prior to light soaking this range is limited to 4 mAcm-2. At higher bias, a characteristic discrepancy between electroluminescence and electro-modulated photoluminescence appears. We attribute this anomaly to a potential barrier behavior close to the CdS/ Cu(In,Ga)Se2 interface. Metastable defect reactions induced by holes injected into the space charge region partly reduce this barrier. We further find that the luminescence efficiency is enhanced by a factor of 3 by light soaking at 400 K. Spatially resolved electroluminescence measurements conducted during application of voltage or current bias at ambient temperature in the dark are qualitatively compatible with the conclusions drawn from the spectrally resolved measurements.
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17

Wang, Ying, Dong Yun Ma, Zhao Hua Jiang, Yun Jie Zhang, Huan Yuan, Yu Guang Lv, Hong Liu, Yong Chang Zhu, and Wei Fang. "Synthesis, Characterization and Luminescent Properties of a Rare Earth Complex Eu(TTA)3(TPPO)2." Advanced Materials Research 512-515 (May 2012): 1767–70. http://dx.doi.org/10.4028/www.scientific.net/amr.512-515.1767.

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A complex of Eu(Ⅲ), HTTA and TPPO was synthesized in alcohol (HTTA= 2-Thenoyltrifluoroacetone and TPPO=Triphenyl phosphine oxide )and its corresponding single crystal was obtained. The complex was characterized by IR,UV, X-ray single crystal diffraction.The photoluminescent and electroluminescent properties of the complex were studied. The results showed that the spectra structure characterization is consistent with that of single-crystal diffraction. The complex exhibited ligand-sensitized red emission, and it has higher sensitized luminescent efficiency and good thermal stability.In device ITO/PVK/ Eu(TTA)3(TPPO)2/Al, Eu3+ may be excited by intramolecular energy transfer from ligand as observed by electroluminescence. The main emitting peak at 614 nm can be attributed to the europium of 5D0→7F2 of Eu 3+ ion and this process results in the enhancement of red emission from electroluminescence device. The present study may be important and helpful for the development of red color rare earth display applications.
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18

Xiong, Wenjing, Cheng Zhang, Yuanyuan Fang, Mingsheng Peng, and Wei Sun. "Progresses and Perspectives of Near-Infrared Emission Materials with “Heavy Metal-Free” Organic Compounds for Electroluminescence." Polymers 15, no. 1 (December 26, 2022): 98. http://dx.doi.org/10.3390/polym15010098.

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Organic/polymer light-emitting diodes (OLEDs/PLEDs) have attracted a rising number of investigations due to their promising applications for high-resolution fullcolor displays and energy-saving solid-state lightings. Near-infrared (NIR) emitting dyes have gained increasing attention for their potential applications in electroluminescence and optical imaging in optical tele-communication platforms, sensing and medical diagnosis in recent decades. And a growing number of people focus on the “heavy metal-free” NIR electroluminescent materials to gain more design freedom with cost advantage. This review presents recent progresses in conjugated polymers and organic molecules for OLEDs/PLEDs according to their different luminous mechanism and constructing systems. The relationships between the organic fluorophores structures and electroluminescence properties are the main focus of this review. Finally, the approaches to enhance the performance of NIR OLEDs/PLEDs are described briefly. We hope that this review could provide a new perspective for NIR materials and inspire breakthroughs in fundamental research and applications.
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19

Kyômen, Tôru, Miyu Seki, Minoru Hanaya, and Hiroshi Takashima. "Photoluminescence and Electroluminescence Properties of (Ca,Sr)TiO3:Er." Key Engineering Materials 698 (July 2016): 60–65. http://dx.doi.org/10.4028/www.scientific.net/kem.698.60.

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Powder samples of (Ca,Sr)TiO3:Er were prepared by a solid-state reaction method. Photoluminescence due to f-f transitions of Er3+ was not induced by band-gap excitation of (Ca,Sr)TiO3 but by f-f transitions of Er3+. An electroluminescent device in which thin films of Ca0.6Sr0.4TiO3:Er and SnO2:Sb are stacked alternately was prepared by sol-gel and spin-coating methods. Very weak electroluminescence due to f-f transition of Er3+ was observed in the device.
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20

YANG, KI-SUNG, HO-SIK LEE, SEUNG-UN KIM, YOON-KI JANG, DOO-SEOK KIM, HOON-KYU SHIN, YOUNG-SOO KWON, and CHUNGKYUN KIM. "ELECTRICAL AND OPTICAL PROPERTIES OF OLED USING NEW EMISSIVE MATERIAL Al2Nq4." International Journal of Nanoscience 05, no. 06 (December 2006): 859–64. http://dx.doi.org/10.1142/s0219581x06005273.

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Since the first report of the light-emitting diodes based on Alq 3, many organic materials have been synthesized and extended efforts have been made to obtain high performance electroluminescent (EL) device. We synthesized new emissive material, 1, 4-dihydoxy-5, 8-naphtaquinone· Alq 3 complex( Al 2 Nq 4), and extended efforts have been made to obtain high-performance electroluminescent (EL) devices. Current–voltage (I–V) and luminance–voltage (L–V) characteristics were measured by Flat Panel Display Analysis System (Model 200-AT) at room temperature. The Al 2 Nq 4 shows green photoluminescence and electroluminescence spectra at about 510 nm, and ITO/Al 2 Nq 4/Cathode device shows typical rectifying characteristics.
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21

Zhang, Yanfu, Ruinan Wang, Fangbin Wang, Darong Zhu, Xue Gong, and Xiuzhi Cheng. "Electroluminescence as a Tool to Study the Polarization Characteristics and Generation Mechanism in Silicon PV Panels." Applied Sciences 13, no. 3 (January 26, 2023): 1591. http://dx.doi.org/10.3390/app13031591.

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Electroluminescence is a defect detection method commonly used in photovoltaic industry. However, the current research mainly focuses on qualitative analysis rather quantitative evaluation, since there exists some shortcomings, such as fuzzy edges, unclear texture, etc., in the obtained electroluminescence images. Electroluminescence polarization imagery is a new method for defect detection in photovoltaic modules, which can effectively make up for the aforementioned deficiencies. In this paper, the polarization characteristics and formation mechanism of silicon solar panels was investigated based on the principle of electroluminescence. Firstly, the polarization imaging mechanism of electroluminescence of photovoltaic modules was studied. Then, an electroluminescence polarization experimental platform was built, and the polarized electroluminescence images of photovoltaic panels were obtained and preprocessed with Gaussian filter. Finally, the influence of view angle, bias voltage and other factors on the polarization characteristics was discussed. The results show that the electroluminescence of photovoltaic modules has polarization characteristics, and the degree and angle of polarization are related to the view angle and bias voltage; the degree of polarization of photovoltaic panel electroluminescence increases with the angle of view, and first increases then rapidly decreases with bias voltage.
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22

Song, Seongkyu, Hyeon-Seo Choi, Chang-Hee Cho, Sang Kyoo Lim, and Soon Moon Jeong. "Bright and uniform light emission from stretchable, dual-channel energy conversion systems: Simultaneous harnessing of electrical and mechanical excitations." Applied Physics Reviews 9, no. 1 (March 2022): 011423. http://dx.doi.org/10.1063/5.0080090.

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Recently, significant progress has been made in the development of new techniques for the fabrication of mechanically durable, bright, and deformable electroluminescent devices, leading to the emergence of various technologies, such as soft robots, actuators, flexible/stretchable/wearable electronics, and self-healable devices. However, these devices mostly possess coplanar structures, wherein the internally generated light must be transmitted through at least one of the electrodes, and require a thin emissive layer (EML), causing low brightness and less applicability in soft devices. This is particularly challenging in the case of stretchable electroluminescent devices, which require electrodes exhibiting both high transmittance and low resistance even in the stretchable state because thin EMLs have low tolerance to external mechanical deformations. Herein, we report in-plane electric-field-driven, stretchable alternating-current electroluminescent devices with high brightness by utilizing a thick EML comprising multiple parallelly patterned silver nanowires embedded in a zinc-sulfide-embedded polydimethylsiloxane layer. Since the device is driven by an internal in-plane electric field, it can utilize a thick EML without using planar electrodes. At an electric field of 8 V/ μm, the device showed 3.8 times higher electroluminescence luminance than a thin coplanar-structured device and achieved a maximum brightness of 1324 cd/m2 (at 9.12 V/ μm), suggesting that the electric field expands throughout the thick EML. Furthermore, the device exhibited strong mechanoluminescence and good durability of dual-channel luminescence under simultaneous electromechanical stimulation. We believe that our results represent a breakthrough in electroluminescence and mechanoluminescence research and provide important insights into the development of sustainable and stretchable devices with high brightness.
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23

Imai, Yoshitane, Ryo Amasaki, Yoshihiko Yanagibashi, Seika Suzuki, Ryuta Shikura, and Shigeyuki Yagi. "Magnetically Induced Near-Infrared Circularly Polarized Electroluminescence from an Achiral Perovskite Light-Emitting Diode." Magnetochemistry 10, no. 6 (May 28, 2024): 39. http://dx.doi.org/10.3390/magnetochemistry10060039.

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Circularly polarized electroluminescent devices are conventionally fabricated by incorporating an optically active chiral luminophore into their emission layer. Herein, we developed a circularly polarized perovskite light-emitting diode (PeLED) system with an optically inactive perovskite luminophore that can emit near-infrared circularly polarized electroluminescence (CPEL) upon application of an external magnetic field. The magnitude of the magnetic CPEL (gMCPEL) was in the order of 10−3 in the near-infrared wavelength range of 771–773 nm. Although the Pb perovskite quantum dots were achiral, the rotation direction of the CPEL of the magnetic circularly polarized PeLED system was successfully reversed by switching the Faraday geometry of the applied magnetic field. The use of achiral luminophores exhibiting magnetic-field-induced CPEL represents a new approach for the development of circularly polarized electroluminescent devices.
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24

Baukol, B. A., J. C. Hitt, J. F. Wager, and S. S. Sun. "Electroluminescence thermal quenching in alternating-current thin-film electroluminescent devices." Journal of Applied Physics 90, no. 5 (September 2001): 2185–90. http://dx.doi.org/10.1063/1.1385570.

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25

Cimrová, Věra, Christoph Ulbricht, Vagif Dzhabarov, Drahomír Výprachtický, and Daniel Ayuk Mbi Egbe. "New electroluminescent carbazole-containing conjugated polymer: Synthesis, photophysics, and electroluminescence." Polymer 55, no. 24 (November 2014): 6220–26. http://dx.doi.org/10.1016/j.polymer.2014.10.015.

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26

Ga¸siorski, P., E. Gondek, K. S. Danel, M. Pokladko-Kowar, P. Armatys, and A. V. Kityk. "Green electroluminescence from azafluoranthene derivatives in polymer based electroluminescent devices." Optical Materials 35, no. 3 (January 2013): 681–84. http://dx.doi.org/10.1016/j.optmat.2012.09.027.

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27

Rothberg, Lewis J., and Andrew J. Lovinger. "Status of and prospects for organic electroluminescence." Journal of Materials Research 11, no. 12 (December 1996): 3174–87. http://dx.doi.org/10.1557/jmr.1996.0403.

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We review the device and materials science behind organic electroluminescent diodes made both using discrete evaporable molecules and spin-cast organic polymers. A great deal of progress has been made in improving the efficiencies and spectral properties of organic light-emitting diodes, and these are now adequate for many applications. More work is necessary to understand the stability and degradation of emissive and charge-transporting organics, but some systems have been shown to be stable for 104 hours at display brightness. Major challenges still face the community in terms of developing satisfactory systems design and processing techniques if organic electroluminescence is to realize either performance or economic advantages over technologies and significantly penetrate the display market. We present an analysis of the suitability of organic light-emitting diodes for various applications, and consider the materials and manufacturing obstacles that must be overcome.
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28

Hou, Qiong, Jie Luo, Sui Lian Luo, Hong Zhu, and Guang Shi. "White Electroluminescence from a Single Fluorene-Based Copolymer." Advanced Materials Research 160-162 (November 2010): 732–36. http://dx.doi.org/10.4028/www.scientific.net/amr.160-162.732.

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White light emitting polymers were synthesized through incorporating of low-band gap red light emitting 4,7-di(4-hexyl-thien-2-yl)-2,1,3-benzothiadiazole (DHTBT) moieties into the backbone of a blue-light-emitting poly(9,9-dioctylfluorene) (PFO). Incomplete energy transfer from the blue electroluminescent PFO backbone to the red light emitting unit occurred by carefully controlling the relative content of the low-band gap unit DHTBT in the resulting polymers. Pure white light electroluminescence from a single polymer has been obtained in a device with a configuration of ITO/PVK/polymer/Ba/Al.The highest external quantum efficiency is 1.04% at the luminance of 249 cd/m2 for the white emitting polymer with color coordinates (0.30, 0.35) very close to the CIE coordinates for National Television System Committee (NTSC) standard white-light emission (0.33,0.33).
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29

Zhang, Yuanming, Xu Yuan, Zhuo Chen, Dong Li, Jingwen Feng, Yang Gao, Yanzhao Li, Xinguo Li, and Xiaoguang Xu. "61‐2: Distinguished Paper: Development of the Ink‐jet Printing Technology for 55 inch 8K AMQLED Display." SID Symposium Digest of Technical Papers 54, no. 1 (June 2023): 869–71. http://dx.doi.org/10.1002/sdtp.16702.

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In this study, we obtained the optimal the structure of QLED topemission spin‐coating device. We use the device structure for inkjet printing, and optimize the morphology and thickness of each layer by controlling the drying process. The red, green and blue devices prepared by using the optimized inkjet printing process show that the electroluminescence area is equal to the designed area of pixels, with clear boundaries, uniform electroluminescent morphologies within a single sub‐pixel, and no significant difference in luminescence between pixels. Finally, we assembled and fabricated a 55‐inch 8K AMQLED display.
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30

Polosan, Silviu, Iulia Corina Ciobotaru, and Claudiu Constantin Ciobotaru. "Organometallic Coatings for Electroluminescence Applications." Coatings 10, no. 3 (March 17, 2020): 277. http://dx.doi.org/10.3390/coatings10030277.

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Organometallic compounds embedded in thin films are widely used for Organic Light-Emitting Diodes (OLED), but their functionalities are strongly correlated with the intrinsic properties of those films. Controlling the concentration of the organometallics in the active layers influences the OLED performances through the aggregation processes. These aggregations could lead to crystallization processes that significantly modify the efficiency of light emission in the case of electroluminescent devices. For functional devices with organometallic-based thin films, some improvements, such as the optimization of the charge injection, are needed to increase the light output. One dual emitter IrQ(ppy)2 organometallic compound was chosen for the aggregation correlations from a multitude of macromolecular organometallics that exist on the market for OLED applications. The choice of additional layers like conductive polymers or small molecules as host for the active layer may significantly influence the performances of the OLED based on the IrQ(ppy)2 organometallic compound. The use of the CBP small molecule layer may lead to an increase in the electroluminescence versus the applied voltage.
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Ibanez, Jorge G., Daniel Zavala-Araiza, and Biaani Sotomayor-MartínezBarranco. "Simultaneous Electroluminescence." Journal of the Chinese Chemical Society 60, no. 4 (January 20, 2013): 407–11. http://dx.doi.org/10.1002/jccs.201200406.

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32

Ahanogbe, Koffi F., José Alvarez, Alexandre Jaffré, James P. Connolly, Marie-Estelle Gueunier-Farret, Erwann Fourmond, Seif El-Whibi, et al. "Electroluminescence analysis of silicon interdigitated back contact solar cells with a front surface selective band offset barrier." EPJ Photovoltaics 13 (2022): 16. http://dx.doi.org/10.1051/epjpv/2022015.

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Electroluminescence allows rapid characterization of an entire photovoltaic solar cell and visualization of defects at the micrometer scale. Here we focus on the optoelectronic properties of silicon interdigitated back contact cells characterized by electroluminescence. The spatially resolved electroluminescence helps us control the quality of interdigitated back contact structures used in silicon bottom subcells in a three-terminal tandem perovskite on silicon solar cell. Local variations in minority carrier diffusion length, surface recombination velocity and, the impact of resistive and optical losses were analyzed by electroluminescence mapping. In addition, we quantify the radiative saturation current density and the radiative open circuit voltage using the electroluminescence spectrum of the cell. This step allows us to accurately assess the performance limits induced in the device due to the non-radiative recombination.
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Li, Bowen, Qiang Cheng, Jinlin Song, Kun Zhou, Lu Lu, and Zixue Luo. "Thermodynamic performance of near-field electroluminescence and negative electroluminescent refrigeration systems." AIMS Energy 9, no. 3 (2021): 465–82. http://dx.doi.org/10.3934/energy.2021023.

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34

Jayaraj, M. K., Aldrin Antony, and P. Deneshan. "Green electroluminescence from Zn1–xMgxS:Mn alternating current thin film electroluminescent devices." Thin Solid Films 389, no. 1-2 (June 2001): 284–87. http://dx.doi.org/10.1016/s0040-6090(01)00902-6.

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35

Horii, Yoshinori, Masahiko Kitagawa, Hiroki Taneoka, Hiroyuki Kusano, Tomoko Murakami, Yuichi Hino, and Hiroshi Kobayashi. "Electroluminescence properties of PVCz electroluminescent devices doped with nano-crystalline particles." Materials Science and Engineering: B 85, no. 2-3 (August 2001): 92–95. http://dx.doi.org/10.1016/s0921-5107(01)00536-0.

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36

Gurin, N. T. "Infrared Quenching of Electroluminescence in ZnS : Mn Thin-Film Electroluminescent Structures." Technical Physics 50, no. 1 (2005): 44. http://dx.doi.org/10.1134/1.1854822.

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37

Yang, Yiyu, Ran Xiao, Xiaosong Cao, Zhanxiang Chen, Xialei Lv, Youming Zhang, Shaolong Gong, Yang Zou, and Chuluo Yang. "Phenoxazine-Dibenzothiophene Sulfoximine Emitters Featuring Both Thermally Activated Delayed Fluorescence and Aggregation Induced Emission." Molecules 26, no. 17 (August 29, 2021): 5243. http://dx.doi.org/10.3390/molecules26175243.

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In this work, we demonstrate dibenzothiophene sulfoximine derivatives as building blocks for constructing emitters featuring both thermally activated delayed fluorescent (TADF) and aggregation-induced emission (AIE) properties, with multiple advantages including high chemical and thermal stability, facile functionalization, as well as tunable electron-accepting ability. A series of phenoxazine-dibenzothiophene sulfoximine structured TADF emitters were successfully synthesized and their photophysical and electroluminescent properties were evaluated. The electroluminescence devices based on these emitters displayed diverse emissions from yellow to orange and reached external quantum efficiencies (EQEs) of 5.8% with 16.7% efficiency roll-off at a high brightness of 1000 cd·m−2.
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Hara, Michihiro, Takao Umeda, and Hiroyuki Kurata. "Fabrication and Characterisation of Organic EL Devices in the Presence of Cyclodextrin as an Interlayer." Sensors 21, no. 11 (May 25, 2021): 3666. http://dx.doi.org/10.3390/s21113666.

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This study examined glass-based organic electroluminescence in the presence of a cyclodextrin polymer as an interlayer. Glass-based organic electroluminescence was achieved by the deposition of five layers of N,N’-Bis(3-methylphenyl)N,N’-bis(phenyl)-benzidine, cyclodextrin polymer (CDP), tris-(8-hydroxyquinolinato) aluminium LiF and Al on an indium tin oxide-coated glass substrate. The glass-based OEL exhibited green emission owing to the fluorescence of tris-(8-hydroxyquinolinato) aluminium. The highest luminance was 19,620 cd m−2. Moreover, the glass-based organic electroluminescence device showed green emission at 6 V in the curved state because of the inhibited aggregation of the cyclodextrin polymer. All organic molecules are insulating, but except CDP, they are standard molecules in conventional organic electroluminescence devices. In this device, the CDP layer contained pores that could allow conventional organic molecules to enter the pores and affect the organic electroluminescence interface. In particular, self-association was suppressed, efficiency was improved, and light emission was observed without the need for a high voltage. Overall, the glass-based organic electroluminescence device using CDP is an environmentally friendly device with a range of potential energy saving applications.
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39

Lin, Gong-Ru. "Spectroscopic Analysis on Metal-Oxide-Semiconductor Light-Emitting Diodes with Buried Si Nanocrystals and Nano-Pyramids in SiOx Film." Journal of Nanoscience and Nanotechnology 8, no. 3 (March 1, 2008): 1092–100. http://dx.doi.org/10.1166/jnn.2008.18157.

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The difference between the white and near-infrared electroluminescence of metal-oxide-semiconductor light-emitting diodes fabricated on 1,100 °C-annealed Si-rich SiOx/p-Si substrate with interfacial pyramidal Si dots (Si nano-pyramids)was characterized. By changing the substrate temperature and induced coupled plasma power during the plasma enhanced chemical vapor deposition of Si-rich SiOx films, the effects of the growth conditions on the defect- and Si nano-pyramid-related carrier transport and Si nanocrystal-related electroluminescence spectroscopy were also investigated. The annealed Si-rich SiOx/p-Si films grown at higher synthesized substrate temperate (350 °C)show the larger Si nano-pyramids precipitating near the Si/SiO2 interface. The indium tin oxide/Si-rich SiOx/p-Si/Al metal-oxide-semiconductor light-emitting diodes with Si-rich SiOx films exhibit different white-light electroluminescence spectra at wavelengths from 400 to 650 nm. The Si nanocrystal-related electroluminescence spectra at 650–850 nm are confirmed, whereas the electroluminescence spectra are shorter wavelengths is attributed to oxygen related defects. These defects become an electron-preferred transporting path within the Si-rich SiOx film, whose densities are decreased by increasing the substrate temperature or reducing the induced coupled plasma power. Defect-related white-light electroluminescence emits power for a relatively short lifetime. The lifetime can be lengthened and the electroluminescence power can be raised simultaneously by increasing deposition temperature to 350 °C and adjusting the induced coupled plasma power to a threshold of 30 W, which effectively increases the densities of Si nanocrystals and nano-pyramids in the Si-rich SiOx film with Si concentration of up to 40 at%. A nearly defect-free Si-rich SiOx sample can be grown under such conditions, which contributes to the most stable and largest near-infrared electroluminescence with the longest lifetime, although the power–current slope of purely Si nanopyramid related electroluminescence at near-infrared wavelengths is slightly lower.
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40

Witkowska, Ewelina, Gabriela Wiosna-Salyga, Ireneusz Glowacki, Tung-Huei Ke, Pawel Malinowski, and Paul Heremans. "Effect of TADF Assistance on Performance Enhancement in Solution Processed Green Phosphorescent OLEDs." Polymers 13, no. 7 (April 2, 2021): 1148. http://dx.doi.org/10.3390/polym13071148.

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Many methods have been proposed to increase the efficiency of organic electroluminescent materials applied as an emissive layer in organic light emitting diodes (OLEDs). Herein, we demonstrate enhancement of electroluminescence efficiency and operational stability solution processed OLEDs by employing thermally activated delayed fluorescence (TADF) molecules as assistant dopants in host-guest systems. The TADF assistant dopant (SpiroAC–TRZ) is used to facilitate efficient energy transfer from host material poly(N–vinylcarbazole) (PVK) to a phosphorescent Ir(III) emitter. We present the analysis of energy transfer and charge trapping—two main processes playing a crucial role in light generation in host–guest structure OLEDs. The investigation of photo-, electro- and thermoluminescence for the double-dopant layer revealed that assistant dopant does not only harvest and transfer the electrically generated excitons to phosphorescent emitter molecules but also creates exciplexes. The triplet states of formed PVK:SpiroAC–TRZ exciplexes are involved in the transport process of charge carriers and promote long–range exciton energy transfer to the emitter, improving the efficiency of electroluminescence in a single emissive layer OLED, resulting in devices with luminance exceeding 18 000 cd/m2 with a luminous efficiency of 23 cd/A and external quantum efficiency (EQE) of 7.4%.
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41

Rosa, José, Mikko J. Heikkilä, Mika Sirkiä, and Saoussen Merdes. "Red Y2O3:Eu-Based Electroluminescent Device Prepared by Atomic Layer Deposition for Transparent Display Applications." Materials 14, no. 6 (March 19, 2021): 1505. http://dx.doi.org/10.3390/ma14061505.

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Y2O3:Eu is a promising red-emitting phosphor owing to its high luminance efficiency, chemical stability, and non-toxicity. Although Y2O3:Eu thin films can be prepared by various deposition methods, most of them require high processing temperatures in order to obtain a crystalline structure. In this work, we report on the fabrication of red Y2O3:Eu thin film phosphors and multilayer structure Y2O3:Eu-based electroluminescent devices by atomic layer deposition at 300 °C. The structural and optical properties of the phosphor films were investigated using X-ray diffraction and photoluminescence measurements, respectively, whereas the performance of the fabricated device was evaluated using electroluminescence measurements. X-ray diffraction measurements show a polycrystalline structure of the films whereas photoluminescence shows emission above 570 nm. Red electroluminescent devices with a luminance up to 40 cd/m2 at a driving frequency of 1 kHz and an efficiency of 0.28 Lm/W were achieved.
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42

Wu, Li Shuang, Xiao Yi Huang, and Hui Shan Yang. "The Influence of the Performance to the Blue Organic Electroluminescent Device with Excton Confining Layer TPBi." Applied Mechanics and Materials 536-537 (April 2014): 1464–68. http://dx.doi.org/10.4028/www.scientific.net/amm.536-537.1464.

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The blue organic electroluminescent device using TPBi as hole blocking layer is reported. The structure of device is ITO/ NPB(30 nm)/ DPVBi (15 nm)/ TPBi (x nm,x=0, 6)/ Alq (30 nm)/ LiF(1 nm)/ Al (200 nm) . With the addition of the TPBi not only make the highly of the blue organic electroluminescent device stable attachment x=0.168,y=0.170, but also the color coordinates change is very small and the chromaticity is relatively stable, which is coming from TPBi blocked hole in the organic emitting layer so as to improve the balance of the carrier, the composite probability of the exciton in organic functional layer and the efficiency of the organic electroluminescence device. The experiment shows the efficiency of the device is 3.32 cd/A, the maximum brightness of the device can reach 2222 cd/m2when the voltage is 20V, respectively.
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43

Koester, Lukas, Emanuel Vallarella, Atse Louwen, Sascha Lindig, and David Moser. "Evaluating the effects of photovoltaic module heating during electroluminescence inspection." EPJ Photovoltaics 14 (2023): 14. http://dx.doi.org/10.1051/epjpv/2023002.

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The application of electroluminescence imaging of photovoltaic modules increased in the last years, due to the reliable and detailed identification of degradation and failures. In future plants the time-consuming connection of power supplies could be overcome by use of inverters with bi-directional functionality, allowing backpowering of connected module strings directly. Temperature influences the open-circuit voltage of photovoltaic modules and must therefore be considered during backpowering. This work investigates the heating due to backpowering of photovoltaic modules of different types during electroluminescence inspection. The temperature increase until saturation is estimated by energy balance calculations and experimentally verified to be around 20 °C, with resulting voltage drops of up to 3 V. Further, these changes have an effect on the recorded luminescence intensity: a decrease of the electroluminescence signal intensity between beginning of backpowering and reaching saturation temperature is shown. For application of the results to a real-world scenario, the electroluminescence window of an electroluminescence-ready inverter is introduced, giving the boundaries of current and voltage that can be supplied. Combined with a simulation of the dark current–voltage curves of a connected photovoltaic module string, the electroluminescence inspection possibilities are visualized. Finally, the applicability of this heating phenomenon for snow melting is discussed.
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44

Романов, В. В., Э. В. Иванов, and К. Д. Моисеев. "Формирование гетероперехода II типа в полупроводниковой структуре InAsSb/InAsSbP." Физика твердого тела 62, no. 11 (2020): 1822. http://dx.doi.org/10.21883/ftt.2020.11.50055.139.

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The results of studying the electroluminescent and current-voltage characteristics of the n-InAs/n-InAsSb/p-InAsSbP heterostructure grown by gas-phase epitaxy from organometallic compounds are presented. Intense electroluminescence was detected in the spectral range 0.23–0.29 eV at the temperature T = 77 K. The position of the maximum of the main emission band (h ~ 0.24 eV) showed a noticeable “blue” shift with increasing applied forward bias. Based on the performed studies, it was concluded that there is a staggered type II heterojunction at the InAs0.84Sb0.16/InAs0.32Sb0.28P0.40 heterointerface, which is confirmed by the results of the calculation of the energy band diagram.
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45

Torah, Russel, Yang Wei, Neil Grabham, Yi Li, Marc de Vos, Todor Todorov, Boris Popov, et al. "Enabling platform technology for smart fabric design and printing." Journal of Engineered Fibers and Fabrics 14 (January 2019): 155892501984590. http://dx.doi.org/10.1177/1558925019845903.

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A hardware and software platform is presented enabling the design, and realisation via printing, of smart fabrics. The cultural and creative industries are an important economic area within which designers frequently utilise fabrics. Smart fabrics offer further creative opportunities to the cultural and creative industries, but designers often lack the required specialist knowledge, in electronics, software and materials, to produce smart fabrics. The software platform offers the ability to perform design, layout and visualisation of a smart fabric using a library of standard smart fabric functions (e.g. electroluminescence) so specialist expertise is not needed. Operation of the smart fabric can be simulated, and parameters can be set for smart fabric control electronics, which consists of standard circuit board modules. The software also provides driver code for the hardware platform to print the smart fabric. The hardware platform consists of a bespoke dispenser printer; functional inks are deposited via a pneumatic syringe controlled by the driver software, allowing bespoke rapid prototyped smart fabrics to be printed. Operation of the software and hardware system is demonstrated by the realisation of an interactive smart fabric consisting of electroluminescent lamps controlled by a proximity sensor. The modular electronics are used to control the smart fabric operation using embedded code generated by the software platform. For example, the blink rate of the electroluminescent lamp can be adjusted by the proximity of a hand. This control is achieved by the use of intuitive drop-down menus and input/output selections by the creative user. At present, the platform allows the design, print and implementation of smart fabrics incorporating the functions of colour change, electroluminescence, sound emission and proximity sensing. The platform can be expanded to add additional functions in the future and the printer will be compatible with new inks developed for screen and inkjet printing.
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46

Bacherikov, Yu Yu. "Electroluminescence powdered ZnS:Cu obtained by one-stage synthesis." Semiconductor Physics Quantum Electronics and Optoelectronics 18, no. 3 (September 30, 2015): 309–11. http://dx.doi.org/10.15407/spqeo18.03.309.

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47

Edel, Joshua B., Andrew J. deMello, and John C. deMello. "Solution-phase electroluminescence." Chemical Communications, no. 17 (August 7, 2002): 1954–55. http://dx.doi.org/10.1039/b205298a.

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48

So, Franky, Song Shi, and H. C. Lee. "Organic Electroluminescence Displays." International Journal of High Speed Electronics and Systems 08, no. 02 (June 1997): 247–63. http://dx.doi.org/10.1142/s0129156497000081.

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Recently, organic light emitting diodes have received a lot of attention in different research laboratories world-wide. Red, green and blue emitting devices are readily available. Devices with luminous efficiencies greater than 15 lm/W and lifetimes longer than 10,000 hours have been demonstrated. In this article, we will discuss the basic devices used in physics, materials used in organic light emitting diodes, device degradation mechanisms, and the opportunities of using this technology for commercial display applications.
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49

Bradley, D. D. C. "Conjugated polymer electroluminescence." Synthetic Metals 54, no. 1-3 (March 1993): 401–15. http://dx.doi.org/10.1016/0379-6779(93)91086-h.

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50

Kalinowski, Jan. "Electroluminescence in organics." Journal of Physics D: Applied Physics 32, no. 24 (December 3, 1999): R179—R250. http://dx.doi.org/10.1088/0022-3727/32/24/201.

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