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Journal articles on the topic 'Electroluminescence'

Author: Grafiati

Published: 4 June 2021

Last updated: 25 July 2025

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1

Ando, Masanori, Chie Hosokawa, Ping Yang, and Norio Murase. "Electroluminescence of Hybrid Self-Organised Fibres Incorporating CdTe Quantum Dots." Australian Journal of Chemistry 65, no. 9 (2012): 1257. http://dx.doi.org/10.1071/ch12127.

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We demonstrated electroluminescence from hybrid 1D glass fibres incorporating CdTe quantum dots with a thin SiO2 overlayer which contains CdS-like clusters. The self-organised fibres, prepared by refluxing precursor nanowires, exhibited red electroluminescence on Au interdigitated array electrodes at room temperature. Although fluctuation with time was observed in the electroluminescence, relatively low threshold electric field (2.6 × 106 V m–1) suggests that the CdTe quantum dots-based hybrid fibres are expected to be applied to low voltage driven electroluminescent devices.

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2

Xiao, T., G. Liu, M. Adams, and A. H. Kitai. "Green Zn2SiO4:Mn thin-film electroluminescence on silicon substrates." Canadian Journal of Physics 74, no. 3-4 (1996): 132–35. http://dx.doi.org/10.1139/p96-020.

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Bright electroluminescence has been achieved on silicon substrates for the first time using Zn2SiO4:Mn thin films that were RF magnetron sputtered. A brightness of over 16 foot lambert (fL) was observed at 400 Hz and 260 V, with a steep brightness–voltage behaviour characteristic of ZnS electroluminescence. A multiplexed electroluminescent display is now feasible using Zn2SiO4:Mn.

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3

Михайлова, М. П., Э. В. Иванов, Л. В. Данилов та ін. "Электролюминесценция в гетероструктурах n-GaSb/InAs/ p-GaSb с одиночной квантовой ямой, выращенных методом МОГФЭ". Физика и техника полупроводников 53, № 1 (2019): 50. http://dx.doi.org/10.21883/ftp.2019.01.46986.8958.

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AbstractThe electroluminescent characteristics of a type-II n -GaSb/ n -InAs/ p -GaSb heterostructure with a single deep quantum well grown by metalorganic vapor-phase epitaxy are investigated. The energy-band diagram of the structure and the positions of the electron and heavy-hole energy levels are calculated. The analysis of the current–voltage characteristics demonstrates that the dark current in the structure under study flows via the tunneling mechanism. Intense electroluminescence characterized by a weak temperature dependence was observed in the spectral range of 3–4 μm at T = 77 and 3

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4

Semakova A. A., Ruzhevich M. S., Romanov V. V., Bazhenov N. L., Mynbaev K. D., and Moiseev K. D. "Stimulated emission in the InAs/InAsSb/InAsSbP heterostructures with asymmetric electronic confinement." Semiconductors 56, no. 9 (2022): 659. http://dx.doi.org/10.21883/sc.2022.09.54131.9925.

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The electroluminescent characteristics of the InAs/InAs1-ySby/InAsSbP asymmetric light-emitting diode heterostructures with high InSb mole fraction in the active region (y&gt;0.09) in the temperature range 4.2-300 K have been studied. Stimulated emission was achieved in the wavelength range 4.1-4.2 μm at low temperatures (T&lt;30 K). It was found that the electroluminescence spectra were formed as a result of the superposition of contributions from different channels of radiative recombination of charge carriers near the type II heterointerface. The effect of the quality of the type II

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5

Parkhomenko Ya. A., Ivanov E. V., and Moiseev K. D. "Radiative recombination in the InAs/InSb type II broken-gap heterojucntion with quantum dots at the interface." Physics of the Solid State 65, no. 4 (2023): 628. http://dx.doi.org/10.21883/pss.2023.04.56006.11.

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The electroluminescent properties of narrow-gap type II InAs/InSb/InAs heterostructures containing a single layer of InSb quantum dots placed at the interface of the p-n junction in InAs were studied. The features of the electroluminescence spectra depending on the surface density of nanoobjects at a broken-gap type II heterointerface were investigated both at forward and reverse bias. When applying a reverse bias to the heterostructures under study, the suppression of negative interband luminescence and the dominance of interface recombination transitions at the InSb/InAs type II heterojuncti

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6

Miyake, Seiya, Toshinobu Inagaki, Tatsuo Mori, and Teruyosi Mizutani. "Electroluminescence and Electrical Properties of Organic Electroluminescent Diodes." IEEJ Transactions on Fundamentals and Materials 115, no. 12 (1995): 1257–62. http://dx.doi.org/10.1541/ieejfms1990.115.12_1257.

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7

Pappalardo, R. G. "Photo‐Electroluminescence in Commercial Thin‐Film Electroluminescent Panels." Journal of The Electrochemical Society 137, no. 11 (1990): 3469–74. http://dx.doi.org/10.1149/1.2086252.

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8

Wang, Junling, Zhuan Li, and Chunmei Liu. "A New Kind of Blue Hybrid Electroluminescent Device." Journal of Nanoscience and Nanotechnology 16, no. 4 (2016): 3763–67. http://dx.doi.org/10.1166/jnn.2016.11816.

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Bright blue Electroluminescence come from a ITO/BBOT doped silica (6×10−3 M) made by a sol–gel method/Al driven by AC with 500 Hz at different voltages and Gaussian analysis under 55 V showed that blue emission coincidenced with typical triple emission from BBOT. This kind of device take advantage of organics (BBOT) and inorganics (silica). Electroluminescence from a singlelayered sandwiched device consisting of blue fluorescent dye 2,5-bis (5-tert-butyl-2-benzoxazolyl) thiophene (BBOT) doped silica made by sol–gel method was investigated. A number of concentrations of hybrid devices were prep

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9

Kyômen, Tôru, Sayaka Hasuko, Minoru Hanaya, and Hiroshi Takashima. "Electroluminescence of a Multilayer in which Thin Films of NaNbO₃:Pr Phosphor and SnO₂:Sb Transparent Conductor Are Alternately Stacked." Key Engineering Materials 643 (May 2015): 33–37. http://dx.doi.org/10.4028/www.scientific.net/kem.643.33.

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Oxide inorganic electroluminescent device in which thin films of Pr-doped NaNbO3 phosphor and Sb-doped SnO2 transparent conductor are alternately stacked was prepared by sol-gel and spin-coating methods. Red electroluminescence was observed due to f-f transitions of Pr3+ ions by applying 5-kHz ac voltages to the device. The luminance was 1.0 cd m−2 at 25 V ac and5.0 cd m−2 at 34 V ac.

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10

Gurin, N. T., and O. Yu Sabitov. "Electroluminescence parameters of thin-film ZnS: Mn electroluminescent devices." Technical Physics 51, no. 8 (2006): 1012–24. http://dx.doi.org/10.1134/s106378420608010x.

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11

Baukol, B. A., J. C. Hitt, P. D. Keir, and J. F. Wager. "Electroluminescence thermal quenching in SrS:Cu thin-film electroluminescent devices." Applied Physics Letters 76, no. 2 (2000): 185–87. http://dx.doi.org/10.1063/1.125697.

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12

Feres, Flavio H., Lucas Fugikawa Santos, and Giovani Gozzi. "Temperature and Electric Field Influence on the Electrical Properties of Light-Emitting Devices Comprising PEDOT:PSS/GPTMS/Zn2SIO4:Mn Composites." MRS Advances 3, no. 33 (2018): 1883–89. http://dx.doi.org/10.1557/adv.2018.179.

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ABSTRACTIn the present study, we analyze the influence of temperature and active layer thickness on the electrical properties of electroluminescent devices comprising a polymeric conductive blend (poly(3,4 ethylenedioxythiophene):polystyrene sulfonate, PEDOT:PSS), an inorganic electroluminescent material (manganese doped zinc orthosilicate, Zn2SiO4:Mn) and an organosilicon material (3-glicidoxypropyltrimethoxysilane, GPTMS), manufactured at different weight ratios of the component materials. The devices were obtained by depositing the active layer by drop-casting onto ITO-coated (RF-sputtering

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13

Velasco, Jaime González. "Electroluminescence." Electroanalysis 3, no. 4-5 (1991): 261–71. http://dx.doi.org/10.1002/elan.1140030405.

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14

van Gorkom, Hans J. "Electroluminescence." Photosynthesis Research 48, no. 1-2 (1996): 107–16. http://dx.doi.org/10.1007/bf00041001.

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15

Tadesse, Melkie Getnet, and Jörn Felix Lübben. "Recent Progress in Self-Healable Hydrogel-Based Electroluminescent Devices: A Comprehensive Review." Gels 9, no. 3 (2023): 250. http://dx.doi.org/10.3390/gels9030250.

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Flexible electronics have gained significant research attention in recent years due to their potential applications as smart and functional materials. Typically, electroluminescence devices produced by hydrogel-based materials are among the most notable flexible electronics. With their excellent flexibility and their remarkable electrical, adaptable mechanical and self-healing properties, functional hydrogels offer a wealth of insights and opportunities for the fabrication of electroluminescent devices that can be easily integrated into wearable electronics for various applications. Various st

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16

Rau, U., T. C. M. Müller, T. M. H. Tran, B. E. Pieters, and A. Gerber. "Electroluminescence of Cu(In,Ga)Se2 solar cells and modules." MRS Proceedings 1538 (2013): 133–44. http://dx.doi.org/10.1557/opl.2013.979.

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ABSTRACTFundamental aspects of (electro-)luminescence of Cu(In,Ga)Se2 solar cells and modules are investigated by means of spectrally and spatially resolved measurements. The validity of the reciprocity relation between spectrally resolved electroluminescence emission and photovoltaic quantum efficiency is verified for the case of industrially produced ZnO/CdS/Cu(In,Ga)Se2 heterojunction solar cells. Further we find that photo- and electroluminescent emission in these devices obey a superposition principle only in a limited range of the applied electrical or illumination bias. This range depen

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17

Wang, Ying, Dong Yun Ma, Zhao Hua Jiang, et al. "Synthesis, Characterization and Luminescent Properties of a Rare Earth Complex Eu(TTA)₃(TPPO)₂." Advanced Materials Research 512-515 (May 2012): 1767–70. http://dx.doi.org/10.4028/www.scientific.net/amr.512-515.1767.

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A complex of Eu(Ⅲ), HTTA and TPPO was synthesized in alcohol (HTTA= 2-Thenoyltrifluoroacetone and TPPO=Triphenyl phosphine oxide )and its corresponding single crystal was obtained. The complex was characterized by IR,UV, X-ray single crystal diffraction.The photoluminescent and electroluminescent properties of the complex were studied. The results showed that the spectra structure characterization is consistent with that of single-crystal diffraction. The complex exhibited ligand-sensitized red emission, and it has higher sensitized luminescent efficiency and good thermal stability.In device I

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18

Xiong, Wenjing, Cheng Zhang, Yuanyuan Fang, Mingsheng Peng, and Wei Sun. "Progresses and Perspectives of Near-Infrared Emission Materials with “Heavy Metal-Free” Organic Compounds for Electroluminescence." Polymers 15, no. 1 (2022): 98. http://dx.doi.org/10.3390/polym15010098.

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Organic/polymer light-emitting diodes (OLEDs/PLEDs) have attracted a rising number of investigations due to their promising applications for high-resolution fullcolor displays and energy-saving solid-state lightings. Near-infrared (NIR) emitting dyes have gained increasing attention for their potential applications in electroluminescence and optical imaging in optical tele-communication platforms, sensing and medical diagnosis in recent decades. And a growing number of people focus on the “heavy metal-free” NIR electroluminescent materials to gain more design freedom with cost advantage. This

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19

Zhang, Yanfu, Ruinan Wang, Fangbin Wang, Darong Zhu, Xue Gong, and Xiuzhi Cheng. "Electroluminescence as a Tool to Study the Polarization Characteristics and Generation Mechanism in Silicon PV Panels." Applied Sciences 13, no. 3 (2023): 1591. http://dx.doi.org/10.3390/app13031591.

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Electroluminescence is a defect detection method commonly used in photovoltaic industry. However, the current research mainly focuses on qualitative analysis rather quantitative evaluation, since there exists some shortcomings, such as fuzzy edges, unclear texture, etc., in the obtained electroluminescence images. Electroluminescence polarization imagery is a new method for defect detection in photovoltaic modules, which can effectively make up for the aforementioned deficiencies. In this paper, the polarization characteristics and formation mechanism of silicon solar panels was investigated b

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20

Kyômen, Tôru, Miyu Seki, Minoru Hanaya, and Hiroshi Takashima. "Photoluminescence and Electroluminescence Properties of (Ca,Sr)TiO₃:Er." Key Engineering Materials 698 (July 2016): 60–65. http://dx.doi.org/10.4028/www.scientific.net/kem.698.60.

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Powder samples of (Ca,Sr)TiO3:Er were prepared by a solid-state reaction method. Photoluminescence due to f-f transitions of Er3+ was not induced by band-gap excitation of (Ca,Sr)TiO3 but by f-f transitions of Er3+. An electroluminescent device in which thin films of Ca0.6Sr0.4TiO3:Er and SnO2:Sb are stacked alternately was prepared by sol-gel and spin-coating methods. Very weak electroluminescence due to f-f transition of Er3+ was observed in the device.

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21

YANG, KI-SUNG, HO-SIK LEE, SEUNG-UN KIM, et al. "ELECTRICAL AND OPTICAL PROPERTIES OF OLED USING NEW EMISSIVE MATERIAL Al2Nq4." International Journal of Nanoscience 05, no. 06 (2006): 859–64. http://dx.doi.org/10.1142/s0219581x06005273.

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Since the first report of the light-emitting diodes based on Alq 3, many organic materials have been synthesized and extended efforts have been made to obtain high performance electroluminescent (EL) device. We synthesized new emissive material, 1, 4-dihydoxy-5, 8-naphtaquinone· Alq 3 complex( Al 2 Nq 4), and extended efforts have been made to obtain high-performance electroluminescent (EL) devices. Current–voltage (I–V) and luminance–voltage (L–V) characteristics were measured by Flat Panel Display Analysis System (Model 200-AT) at room temperature. The Al 2 Nq 4 shows green photoluminescence

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22

Song, Seongkyu, Hyeon-Seo Choi, Chang-Hee Cho, Sang Kyoo Lim, and Soon Moon Jeong. "Bright and uniform light emission from stretchable, dual-channel energy conversion systems: Simultaneous harnessing of electrical and mechanical excitations." Applied Physics Reviews 9, no. 1 (2022): 011423. http://dx.doi.org/10.1063/5.0080090.

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Recently, significant progress has been made in the development of new techniques for the fabrication of mechanically durable, bright, and deformable electroluminescent devices, leading to the emergence of various technologies, such as soft robots, actuators, flexible/stretchable/wearable electronics, and self-healable devices. However, these devices mostly possess coplanar structures, wherein the internally generated light must be transmitted through at least one of the electrodes, and require a thin emissive layer (EML), causing low brightness and less applicability in soft devices. This is

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23

Baukol, B. A., J. C. Hitt, J. F. Wager, and S. S. Sun. "Electroluminescence thermal quenching in alternating-current thin-film electroluminescent devices." Journal of Applied Physics 90, no. 5 (2001): 2185–90. http://dx.doi.org/10.1063/1.1385570.

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24

Cimrová, Věra, Christoph Ulbricht, Vagif Dzhabarov, Drahomír Výprachtický, and Daniel Ayuk Mbi Egbe. "New electroluminescent carbazole-containing conjugated polymer: Synthesis, photophysics, and electroluminescence." Polymer 55, no. 24 (2014): 6220–26. http://dx.doi.org/10.1016/j.polymer.2014.10.015.

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25

Ga¸siorski, P., E. Gondek, K. S. Danel, M. Pokladko-Kowar, P. Armatys, and A. V. Kityk. "Green electroluminescence from azafluoranthene derivatives in polymer based electroluminescent devices." Optical Materials 35, no. 3 (2013): 681–84. http://dx.doi.org/10.1016/j.optmat.2012.09.027.

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26

Imai, Yoshitane, Ryo Amasaki, Yoshihiko Yanagibashi, Seika Suzuki, Ryuta Shikura, and Shigeyuki Yagi. "Magnetically Induced Near-Infrared Circularly Polarized Electroluminescence from an Achiral Perovskite Light-Emitting Diode." Magnetochemistry 10, no. 6 (2024): 39. http://dx.doi.org/10.3390/magnetochemistry10060039.

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Circularly polarized electroluminescent devices are conventionally fabricated by incorporating an optically active chiral luminophore into their emission layer. Herein, we developed a circularly polarized perovskite light-emitting diode (PeLED) system with an optically inactive perovskite luminophore that can emit near-infrared circularly polarized electroluminescence (CPEL) upon application of an external magnetic field. The magnitude of the magnetic CPEL (gMCPEL) was in the order of 10−3 in the near-infrared wavelength range of 771–773 nm. Although the Pb perovskite quantum dots were achiral

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27

Zhang, Yuanming, Xu Yuan, Zhuo Chen, et al. "61‐2: Distinguished Paper: Development of the Ink‐jet Printing Technology for 55 inch 8K AMQLED Display." SID Symposium Digest of Technical Papers 54, no. 1 (2023): 869–71. http://dx.doi.org/10.1002/sdtp.16702.

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In this study, we obtained the optimal the structure of QLED topemission spin‐coating device. We use the device structure for inkjet printing, and optimize the morphology and thickness of each layer by controlling the drying process. The red, green and blue devices prepared by using the optimized inkjet printing process show that the electroluminescence area is equal to the designed area of pixels, with clear boundaries, uniform electroluminescent morphologies within a single sub‐pixel, and no significant difference in luminescence between pixels. Finally, we assembled and fabricated a 55‐inch

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28

Rothberg, Lewis J., and Andrew J. Lovinger. "Status of and prospects for organic electroluminescence." Journal of Materials Research 11, no. 12 (1996): 3174–87. http://dx.doi.org/10.1557/jmr.1996.0403.

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We review the device and materials science behind organic electroluminescent diodes made both using discrete evaporable molecules and spin-cast organic polymers. A great deal of progress has been made in improving the efficiencies and spectral properties of organic light-emitting diodes, and these are now adequate for many applications. More work is necessary to understand the stability and degradation of emissive and charge-transporting organics, but some systems have been shown to be stable for 104 hours at display brightness. Major challenges still face the community in terms of developing

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29

Ibanez, Jorge G., Daniel Zavala-Araiza, and Biaani Sotomayor-MartínezBarranco. "Simultaneous Electroluminescence." Journal of the Chinese Chemical Society 60, no. 4 (2013): 407–11. http://dx.doi.org/10.1002/jccs.201200406.

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30

Hou, Qiong, Jie Luo, Sui Lian Luo, Hong Zhu, and Guang Shi. "White Electroluminescence from a Single Fluorene-Based Copolymer." Advanced Materials Research 160-162 (November 2010): 732–36. http://dx.doi.org/10.4028/www.scientific.net/amr.160-162.732.

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White light emitting polymers were synthesized through incorporating of low-band gap red light emitting 4,7-di(4-hexyl-thien-2-yl)-2,1,3-benzothiadiazole (DHTBT) moieties into the backbone of a blue-light-emitting poly(9,9-dioctylfluorene) (PFO). Incomplete energy transfer from the blue electroluminescent PFO backbone to the red light emitting unit occurred by carefully controlling the relative content of the low-band gap unit DHTBT in the resulting polymers. Pure white light electroluminescence from a single polymer has been obtained in a device with a configuration of ITO/PVK/polymer/Ba/Al.T

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31

Polosan, Silviu, Iulia Corina Ciobotaru, and Claudiu Constantin Ciobotaru. "Organometallic Coatings for Electroluminescence Applications." Coatings 10, no. 3 (2020): 277. http://dx.doi.org/10.3390/coatings10030277.

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Organometallic compounds embedded in thin films are widely used for Organic Light-Emitting Diodes (OLED), but their functionalities are strongly correlated with the intrinsic properties of those films. Controlling the concentration of the organometallics in the active layers influences the OLED performances through the aggregation processes. These aggregations could lead to crystallization processes that significantly modify the efficiency of light emission in the case of electroluminescent devices. For functional devices with organometallic-based thin films, some improvements, such as the opt

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32

Ahanogbe, Koffi F., José Alvarez, Alexandre Jaffré, et al. "Electroluminescence analysis of silicon interdigitated back contact solar cells with a front surface selective band offset barrier." EPJ Photovoltaics 13 (2022): 16. http://dx.doi.org/10.1051/epjpv/2022015.

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Electroluminescence allows rapid characterization of an entire photovoltaic solar cell and visualization of defects at the micrometer scale. Here we focus on the optoelectronic properties of silicon interdigitated back contact cells characterized by electroluminescence. The spatially resolved electroluminescence helps us control the quality of interdigitated back contact structures used in silicon bottom subcells in a three-terminal tandem perovskite on silicon solar cell. Local variations in minority carrier diffusion length, surface recombination velocity and, the impact of resistive and opt

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33

Li, Bowen, Qiang Cheng, Jinlin Song, Kun Zhou, Lu Lu, and Zixue Luo. "Thermodynamic performance of near-field electroluminescence and negative electroluminescent refrigeration systems." AIMS Energy 9, no. 3 (2021): 465–82. http://dx.doi.org/10.3934/energy.2021023.

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Jayaraj, M. K., Aldrin Antony, and P. Deneshan. "Green electroluminescence from Zn1–xMgxS:Mn alternating current thin film electroluminescent devices." Thin Solid Films 389, no. 1-2 (2001): 284–87. http://dx.doi.org/10.1016/s0040-6090(01)00902-6.

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Horii, Yoshinori, Masahiko Kitagawa, Hiroki Taneoka, et al. "Electroluminescence properties of PVCz electroluminescent devices doped with nano-crystalline particles." Materials Science and Engineering: B 85, no. 2-3 (2001): 92–95. http://dx.doi.org/10.1016/s0921-5107(01)00536-0.

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Gurin, N. T. "Infrared Quenching of Electroluminescence in ZnS : Mn Thin-Film Electroluminescent Structures." Technical Physics 50, no. 1 (2005): 44. http://dx.doi.org/10.1134/1.1854822.

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Yang, Yiyu, Ran Xiao, Xiaosong Cao, et al. "Phenoxazine-Dibenzothiophene Sulfoximine Emitters Featuring Both Thermally Activated Delayed Fluorescence and Aggregation Induced Emission." Molecules 26, no. 17 (2021): 5243. http://dx.doi.org/10.3390/molecules26175243.

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In this work, we demonstrate dibenzothiophene sulfoximine derivatives as building blocks for constructing emitters featuring both thermally activated delayed fluorescent (TADF) and aggregation-induced emission (AIE) properties, with multiple advantages including high chemical and thermal stability, facile functionalization, as well as tunable electron-accepting ability. A series of phenoxazine-dibenzothiophene sulfoximine structured TADF emitters were successfully synthesized and their photophysical and electroluminescent properties were evaluated. The electroluminescence devices based on thes

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38

Fukunari, Yuki, Takayuki Naka, Takeshi Ishida, et al. "20‐3: Invited Paper: Characteristics of Cadmium‐free Blue NanoLEDs with Protection Technology Applied to Quantum Dots." SID Symposium Digest of Technical Papers 55, no. 1 (2024): 243–46. http://dx.doi.org/10.1002/sdtp.17500.

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The nanoLED, an electroluminescent device utilizing quantum dots (QDs), is expected to be a promising candidate for the next‐generation display. This paper presents a newly developed QD protection technology for cadmium‐free nanoLEDs that enables simultaneous achievement of high‐efficiency electroluminescence (EL) and long lifetime. The device which was prototyped by applying ZnSeTe blue QDs to an emissive layer demonstrated a maximum external quantum efficiency (EQE) of 21.0% and a luminance half‐lifetime (LT50) of 128,000 hours at 100 nits. These results indicate that cadmium‐free nanoLEDs c

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39

Hara, Michihiro, Takao Umeda, and Hiroyuki Kurata. "Fabrication and Characterisation of Organic EL Devices in the Presence of Cyclodextrin as an Interlayer." Sensors 21, no. 11 (2021): 3666. http://dx.doi.org/10.3390/s21113666.

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This study examined glass-based organic electroluminescence in the presence of a cyclodextrin polymer as an interlayer. Glass-based organic electroluminescence was achieved by the deposition of five layers of N,N’-Bis(3-methylphenyl)N,N’-bis(phenyl)-benzidine, cyclodextrin polymer (CDP), tris-(8-hydroxyquinolinato) aluminium LiF and Al on an indium tin oxide-coated glass substrate. The glass-based OEL exhibited green emission owing to the fluorescence of tris-(8-hydroxyquinolinato) aluminium. The highest luminance was 19,620 cd m−2. Moreover, the glass-based organic electroluminescence device

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40

Lin, Gong-Ru. "Spectroscopic Analysis on Metal-Oxide-Semiconductor Light-Emitting Diodes with Buried Si Nanocrystals and Nano-Pyramids in SiOx Film." Journal of Nanoscience and Nanotechnology 8, no. 3 (2008): 1092–100. http://dx.doi.org/10.1166/jnn.2008.18157.

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The difference between the white and near-infrared electroluminescence of metal-oxide-semiconductor light-emitting diodes fabricated on 1,100 °C-annealed Si-rich SiOx/p-Si substrate with interfacial pyramidal Si dots (Si nano-pyramids)was characterized. By changing the substrate temperature and induced coupled plasma power during the plasma enhanced chemical vapor deposition of Si-rich SiOx films, the effects of the growth conditions on the defect- and Si nano-pyramid-related carrier transport and Si nanocrystal-related electroluminescence spectroscopy were also investigated. The annealed Si-r

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Koester, Lukas, Emanuel Vallarella, Atse Louwen, Sascha Lindig, and David Moser. "Evaluating the effects of photovoltaic module heating during electroluminescence inspection." EPJ Photovoltaics 14 (2023): 14. http://dx.doi.org/10.1051/epjpv/2023002.

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The application of electroluminescence imaging of photovoltaic modules increased in the last years, due to the reliable and detailed identification of degradation and failures. In future plants the time-consuming connection of power supplies could be overcome by use of inverters with bi-directional functionality, allowing backpowering of connected module strings directly. Temperature influences the open-circuit voltage of photovoltaic modules and must therefore be considered during backpowering. This work investigates the heating due to backpowering of photovoltaic modules of different types d

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Witkowska, Ewelina, Gabriela Wiosna-Salyga, Ireneusz Glowacki, Tung-Huei Ke, Pawel Malinowski, and Paul Heremans. "Effect of TADF Assistance on Performance Enhancement in Solution Processed Green Phosphorescent OLEDs." Polymers 13, no. 7 (2021): 1148. http://dx.doi.org/10.3390/polym13071148.

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Many methods have been proposed to increase the efficiency of organic electroluminescent materials applied as an emissive layer in organic light emitting diodes (OLEDs). Herein, we demonstrate enhancement of electroluminescence efficiency and operational stability solution processed OLEDs by employing thermally activated delayed fluorescence (TADF) molecules as assistant dopants in host-guest systems. The TADF assistant dopant (SpiroAC–TRZ) is used to facilitate efficient energy transfer from host material poly(N–vinylcarbazole) (PVK) to a phosphorescent Ir(III) emitter. We present the analysi

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Романов, В. В., Э. В. Иванов та К. Д. Моисеев. "Формирование гетероперехода II типа в полупроводниковой структуре InAsSb/InAsSbP". Физика твердого тела 62, № 11 (2020): 1822. http://dx.doi.org/10.21883/ftt.2020.11.50055.139.

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The results of studying the electroluminescent and current-voltage characteristics of the n-InAs/n-InAsSb/p-InAsSbP heterostructure grown by gas-phase epitaxy from organometallic compounds are presented. Intense electroluminescence was detected in the spectral range 0.23–0.29 eV at the temperature T = 77 K. The position of the maximum of the main emission band (h ~ 0.24 eV) showed a noticeable “blue” shift with increasing applied forward bias. Based on the performed studies, it was concluded that there is a staggered type II heterojunction at the InAs0.84Sb0.16/InAs0.32Sb0.28P0.40 heterointer

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Rosa, José, Mikko J. Heikkilä, Mika Sirkiä, and Saoussen Merdes. "Red Y2O3:Eu-Based Electroluminescent Device Prepared by Atomic Layer Deposition for Transparent Display Applications." Materials 14, no. 6 (2021): 1505. http://dx.doi.org/10.3390/ma14061505.

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Y2O3:Eu is a promising red-emitting phosphor owing to its high luminance efficiency, chemical stability, and non-toxicity. Although Y2O3:Eu thin films can be prepared by various deposition methods, most of them require high processing temperatures in order to obtain a crystalline structure. In this work, we report on the fabrication of red Y2O3:Eu thin film phosphors and multilayer structure Y2O3:Eu-based electroluminescent devices by atomic layer deposition at 300 °C. The structural and optical properties of the phosphor films were investigated using X-ray diffraction and photoluminescence me

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Wu, Li Shuang, Xiao Yi Huang, and Hui Shan Yang. "The Influence of the Performance to the Blue Organic Electroluminescent Device with Excton Confining Layer TPBi." Applied Mechanics and Materials 536-537 (April 2014): 1464–68. http://dx.doi.org/10.4028/www.scientific.net/amm.536-537.1464.

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The blue organic electroluminescent device using TPBi as hole blocking layer is reported. The structure of device is ITO/ NPB(30 nm)/ DPVBi (15 nm)/ TPBi (x nm,x=0, 6)/ Alq (30 nm)/ LiF(1 nm)/ Al (200 nm) . With the addition of the TPBi not only make the highly of the blue organic electroluminescent device stable attachment x=0.168,y=0.170, but also the color coordinates change is very small and the chromaticity is relatively stable, which is coming from TPBi blocked hole in the organic emitting layer so as to improve the balance of the carrier, the composite probability of the exciton in orga

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Jayathilaka, Wanasinghe Arachchige Dumith Madushanka, Amutha Chinnappan, Ju Nie Tey, Jun Wei, and Seeram Ramakrishna. "Alternative current electroluminescence and flexible light emitting devices." Journal of Materials Chemistry C 7, no. 19 (2019): 5553–72. http://dx.doi.org/10.1039/c9tc01267b.

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Flexible electroluminescence has become a trending technological breakthrough from large-scale displays to wearable light emitting devices. Among different techniques, alternative current electroluminescence (ACEL) has out-shined due to its intrinsic advantages.

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Dorokhin, M. V., Y. A. Danilov, Alexei V. Kudrin, E. I. Malysheva, M. M. Prokof’eva, and B. N. Zvonkov. "Fabrication of InGaAs/GaAs Light-Emitting Diodes with GaMnSb Ferromagnetic Injector Layer." Solid State Phenomena 190 (June 2012): 89–92. http://dx.doi.org/10.4028/www.scientific.net/ssp.190.89.

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The electroluminescence properties of ferromagnetic GaMnSb/GaAs diodes have been investigated. It has been found that diodes properties are significantly dependent on GaMnSb layer electrical properties. The intensity of electroluminescence of the diode with semiconductor GaMnSb contact is relatively low, that is due to a high potential barrier at the interface. In case of metallic GaMnSb/GaAs contact high hole injection efficiency provides relatively high electroluminescence intensity. Investigated light-emitting diodes can be prospective for investigation of spin injection effects.

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Bagraev N. T., Kukushkin S. A., Osipov A. V., Klyachkin L. E., Malyarenko A. M., and Khromov V. S. "Terahertz emission from silicon carbide nanostructures." Semiconductors 56, no. 13 (2022): 2050. http://dx.doi.org/10.21883/sc.2022.13.53897.9709.

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For the first time, electroluminescence detected in the middle and far infrared ranges from silicon carbide nanostructures on silicon, obtained in the framework of the Hall geometry. Silicon carbide on silicon was grown by the method of substitution of atoms on silicon. The electroluminescence from the edge channels of nanostructures is induced due to the longitudinal drain- source current. The electroluminescence spectra obtained in the terahertz frequency range, 3.4, 0.12 THz, arise due to the quantum Faraday effect. Within the framework of the proposed model, the longitudinal current induce

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Brennan, K. F., and C. J. Summers. "The variably spaced superlattice electroluminescent display: A new high efficiency electroluminescence scheme." Journal of Applied Physics 61, no. 12 (1987): 5410–18. http://dx.doi.org/10.1063/1.338281.

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Zhu, Jiarong, Ninghua Yin, and Liheng Feng. "Two non-doped blue emitters for electroluminescent devices: Preparation, photophysics and electroluminescence." Dyes and Pigments 132 (September 2016): 121–27. http://dx.doi.org/10.1016/j.dyepig.2016.04.048.

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