Relevant bibliographies by topics / Electroluminescence

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Electroluminescence'

Author: Grafiati
Published: 4 June 2021
Last updated: 29 July 2024

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Journal articles on the topic "Electroluminescence"

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Ando, Masanori, Chie Hosokawa, Ping Yang, and Norio Murase. "Electroluminescence of Hybrid Self-Organised Fibres Incorporating CdTe Quantum Dots." Australian Journal of Chemistry 65, no. 9 (2012): 1257. http://dx.doi.org/10.1071/ch12127.

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We demonstrated electroluminescence from hybrid 1D glass fibres incorporating CdTe quantum dots with a thin SiO2 overlayer which contains CdS-like clusters. The self-organised fibres, prepared by refluxing precursor nanowires, exhibited red electroluminescence on Au interdigitated array electrodes at room temperature. Although fluctuation with time was observed in the electroluminescence, relatively low threshold electric field (2.6 × 106 V m–1) suggests that the CdTe quantum dots-based hybrid fibres are expected to be applied to low voltage driven electroluminescent devices.
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Xiao, T., G. Liu, M. Adams, and A. H. Kitai. "Green Zn2SiO4:Mn thin-film electroluminescence on silicon substrates." Canadian Journal of Physics 74, no. 3-4 (March 1, 1996): 132–35. http://dx.doi.org/10.1139/p96-020.

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Bright electroluminescence has been achieved on silicon substrates for the first time using Zn2SiO4:Mn thin films that were RF magnetron sputtered. A brightness of over 16 foot lambert (fL) was observed at 400 Hz and 260 V, with a steep brightness–voltage behaviour characteristic of ZnS electroluminescence. A multiplexed electroluminescent display is now feasible using Zn2SiO4:Mn.
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Михайлова, М. П., Э. В. Иванов, Л. В. Данилов, Р. В. Левин, И. А. Андреев, Е. В. Куницына, and Ю. П. Яковлев. "Электролюминесценция в гетероструктурах n-GaSb/InAs/ p-GaSb с одиночной квантовой ямой, выращенных методом МОГФЭ." Физика и техника полупроводников 53, no. 1 (2019): 50. http://dx.doi.org/10.21883/ftp.2019.01.46986.8958.

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AbstractThe electroluminescent characteristics of a type-II n -GaSb/ n -InAs/ p -GaSb heterostructure with a single deep quantum well grown by metalorganic vapor-phase epitaxy are investigated. The energy-band diagram of the structure and the positions of the electron and heavy-hole energy levels are calculated. The analysis of the current–voltage characteristics demonstrates that the dark current in the structure under study flows via the tunneling mechanism. Intense electroluminescence characterized by a weak temperature dependence was observed in the spectral range of 3–4 μm at T = 77 and 300 K. The main electroluminescence band ( h ν = 0.40 eV at 77 K) corresponds to direct radiative transitions between electrons from level E _1 in the InAs quantum well and heavy holes from the continuum at the n -GaSb/ n -InAs heterointerface. A low-intensity electroluminescence band at h ν = 0.27 eV ( T = 77 K) originates from indirect (tunneling) transitions from the first electron level in the quantum well to the second level of heavy holes localized in the valence-band “notch” at the n -InAs/ p -GaSb heterointerface.
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Semakova A. A., Ruzhevich M. S., Romanov V. V., Bazhenov N. L., Mynbaev K. D., and Moiseev K. D. "Stimulated emission in the InAs/InAsSb/InAsSbP heterostructures with asymmetric electronic confinement." Semiconductors 56, no. 9 (2022): 659. http://dx.doi.org/10.21883/sc.2022.09.54131.9925.

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The electroluminescent characteristics of the InAs/InAs1-ySby/InAsSbP asymmetric light-emitting diode heterostructures with high InSb mole fraction in the active region (y>0.09) in the temperature range 4.2-300 K have been studied. Stimulated emission was achieved in the wavelength range 4.1-4.2 μm at low temperatures (T<30 K). It was found that the electroluminescence spectra were formed as a result of the superposition of contributions from different channels of radiative recombination of charge carriers near the type II heterointerface. The effect of the quality of the type II InAsSb/InAsSbP heterojunction on the radiative interface transitions with an increase in the content of InSb in the ternary solid solution is considered. Keywords: heterojunctions, InAs, antimonides, electroluminescence, light-emitting diodes.
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Parkhomenko Ya. A., Ivanov E. V., and Moiseev K. D. "Radiative recombination in the InAs/InSb type II broken-gap heterojucntion with quantum dots at the interface." Physics of the Solid State 65, no. 4 (2023): 628. http://dx.doi.org/10.21883/pss.2023.04.56006.11.

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The electroluminescent properties of narrow-gap type II InAs/InSb/InAs heterostructures containing a single layer of InSb quantum dots placed at the interface of the p-n junction in InAs were studied. The features of the electroluminescence spectra depending on the surface density of nanoobjects at a broken-gap type II heterointerface were investigated both at forward and reverse bias. When applying a reverse bias to the heterostructures under study, the suppression of negative interband luminescence and the dominance of interface recombination transitions at the InSb/InAs type II heterojunction were observed at room temperature. The radiation, which corresponded to recombination transitions involving localized states of InSb quantum dots, was recorded at low temperature. Keywords: quantum dots, electroluminescence, InAs, InSb, type II heterojunction.
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Miyake, Seiya, Toshinobu Inagaki, Tatsuo Mori, and Teruyosi Mizutani. "Electroluminescence and Electrical Properties of Organic Electroluminescent Diodes." IEEJ Transactions on Fundamentals and Materials 115, no. 12 (1995): 1257–62. http://dx.doi.org/10.1541/ieejfms1990.115.12_1257.

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Pappalardo, R. G. "Photo‐Electroluminescence in Commercial Thin‐Film Electroluminescent Panels." Journal of The Electrochemical Society 137, no. 11 (November 1, 1990): 3469–74. http://dx.doi.org/10.1149/1.2086252.

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Wang, Junling, Zhuan Li, and Chunmei Liu. "A New Kind of Blue Hybrid Electroluminescent Device." Journal of Nanoscience and Nanotechnology 16, no. 4 (April 1, 2016): 3763–67. http://dx.doi.org/10.1166/jnn.2016.11816.

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Bright blue Electroluminescence come from a ITO/BBOT doped silica (6×10−3 M) made by a sol–gel method/Al driven by AC with 500 Hz at different voltages and Gaussian analysis under 55 V showed that blue emission coincidenced with typical triple emission from BBOT. This kind of device take advantage of organics (BBOT) and inorganics (silica). Electroluminescence from a singlelayered sandwiched device consisting of blue fluorescent dye 2,5-bis (5-tert-butyl-2-benzoxazolyl) thiophene (BBOT) doped silica made by sol–gel method was investigated. A number of concentrations of hybrid devices were prepared and the maxium concentration was 6×10−3 M. Blue electroluminescent (EL) always occurred above a threshold field 8.57×105 V/cm (30 V) at alternating voltage at 500 HZ. The luminance of the devices increased with the concentration of doped BBOT, but electroluminescence characteristics were different from a single molecule’s photoluminescence properties of triple peaks. When analyzing in detail direct-current electroluminescence devices of pure BBOT, a single peak centered at 2.82 eV appeared with the driven voltage increase, which is similar to the hybrid devices. Comparing Gaussian decomposition date between two kinds of devices, the triple peak characteristic of BBOT was consistent. It is inferred that BBOT contributed EL of the hybrid devices mainly and silica may account for a very small part. Meanwhile the thermal stability of matrix silica was measured by Thermal Gravity-Mass Spectroscopy (TG-MS). There is 12 percent weight loss from room temperature to 1000 °C and silica has about 95% transmittance. So the matric silica played an important role in thermal stability and optical stability for BBOT. In addition, this kind of blue electroluminescence device can take advantages of organic materials BBOT and inorganic materials silica. This is a promising way to enrich EL devices, especially enriching inorganic EL color at a low cost.
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Kyômen, Tôru, Sayaka Hasuko, Minoru Hanaya, and Hiroshi Takashima. "Electroluminescence of a Multilayer in which Thin Films of NaNbO3:Pr Phosphor and SnO2:Sb Transparent Conductor Are Alternately Stacked." Key Engineering Materials 643 (May 2015): 33–37. http://dx.doi.org/10.4028/www.scientific.net/kem.643.33.

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Oxide inorganic electroluminescent device in which thin films of Pr-doped NaNbO3 phosphor and Sb-doped SnO2 transparent conductor are alternately stacked was prepared by sol-gel and spin-coating methods. Red electroluminescence was observed due to f-f transitions of Pr3+ ions by applying 5-kHz ac voltages to the device. The luminance was 1.0 cd m−2 at 25 V ac and5.0 cd m−2 at 34 V ac.
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Feres, Flavio H., Lucas Fugikawa Santos, and Giovani Gozzi. "Temperature and Electric Field Influence on the Electrical Properties of Light-Emitting Devices Comprising PEDOT:PSS/GPTMS/Zn2SIO4:Mn Composites." MRS Advances 3, no. 33 (2018): 1883–89. http://dx.doi.org/10.1557/adv.2018.179.

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ABSTRACTIn the present study, we analyze the influence of temperature and active layer thickness on the electrical properties of electroluminescent devices comprising a polymeric conductive blend (poly(3,4 ethylenedioxythiophene):polystyrene sulfonate, PEDOT:PSS), an inorganic electroluminescent material (manganese doped zinc orthosilicate, Zn2SiO4:Mn) and an organosilicon material (3-glicidoxypropyltrimethoxysilane, GPTMS), manufactured at different weight ratios of the component materials. The devices were obtained by depositing the active layer by drop-casting onto ITO-coated (RF-sputtering) glass substrates and thermally evaporating gold top electrodes in high vacuum. The results show that 90 wt% Zn2SiO4:Mn is required to observe high electroluminescence from the fabricated devices and that the optimum performance (turn-on voltage of 33 V, luminous efficacy of 24 cd/A and maximum luminance of almost 2000 cd/m2) was achieve for a (9.5/0.5/90) (GPTMS/PEDOT:PSS/Zn2SiO4:Mn) weight ratio. The device turn-on voltage found to be as proportional to the thickness of the active layer, indicating that the electroluminescence occurs by a field-effect mechanism. The temperature variation in the 100-300 K range allowed us to develop a theoretical model for the device operation, where the charge carrier transport in the active layer is well described by the variable range hopping model, with luminous efficacy nearby independent of the temperature.
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Dissertations / Theses on the topic "Electroluminescence"

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Mackay, Ian. "Thin film electroluminescence /." Online version of thesis, 1989. http://hdl.handle.net/1850/10551.

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O'Brien, Diarmuid Francis. "Conjugated polymer electroluminescence." Thesis, University of Sheffield, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.266004.

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Greenham, Neil Clement. "Electroluminescence in conjugated polymers." Thesis, University of Cambridge, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.296643.

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Metsios, Ioannis. "Electroluminescence and inorganic phosphor science." Thesis, University of Hull, 2007. http://hydra.hull.ac.uk/resources/hull:5856.

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The research is focussed on wide bandgap 11-VI semiconductors, and more specifically on ZnS and CdS, with applications as thin film electroluminescent displays in the expanding display device market. The science of electroluminescent semiconductors and inorganic salt precipitation is combined with a unique, thin film laser processing technique known as laser induced forward transfer or direct writing (the later terminology used mostly in the case of metal films). Zinc sulfide and cadmium zinc sulfide films with a thickness ranging between 70 and 400 nin have been prepared in an aqueous chemical bath, on optically smooth, silica, or silica based, substrates. The chemical bath contained zinc and cadmium chlorides, thioacetamide, and urea, and the most successful combination of concentrations was found to be 2.6 mM, 56.36 mM and 167.71 mM, respectively. The solution was only slightly acidic, with a pH between 5 and 6.5, and a bath temperature of 90 to 92°C (as measured at I cm from the water surface of the bath) was found to be the most efficient. The films were doped with impurities, such as Cu, Ag and Mn in order to achieve specific luminescent characteristics. A KrF excimer laser at 248 nin was used to transfer the films from their original substrate to a new one. The laser pulse was focussed on the chemically deposited films through the back of the transparent silica substrate. The detached film was transported across a gap of 15 µm and attached to the new substrate. A fluence between 0.5 and 0.7 jCM⁻² was found to give the best transfers, and also able to achieve multiple layer transfers over the same area of the target substrate. The transfers were performed in an argon atmosphere of 4x 10⁻² mbar pressure. Ellipsometry and film reflectivity measurements were used to model and determine the film thickness of the chemically deposited films and the values obtained were confirmed by scanning electron microscopy. Ile latter, together with optical microscopy, atomic force microscopy and interferometry were exploited to investigate the structure of the chemically deposited and laser transferred films. It was found that a very thin ZnO film initially adhered to the substrate in the bath, on which the ZnS or CdZnS main film was attached as homogenously grown cluster beads or grown via ion by ion deposition. The homogeneously grown beads had a phase separation, containing the sulfide with the lowest Ksp in the centre, enclosed by highest Ksp sulfides, with the highest one as a shell. The phase separation between CuS and ZnS was also confirmed by extended X-ray absorption fine structure. The elemental composition of the chemically-prepared and laser-transferred films was investigated by energy dispersive X-ray analysis (EDX), inductively coupled plasma mass spectrometry and Raman microspectrometry, while the EDX and Raman methods also helped to confirm the phase separation between US and ZnS. Cathodoluminescence and photoluminescence measurements were employed to investigate the luminescence properties of the films, and the Mn doped films that were annealed at 700°C were found to be the most efficient cathode ray excited phosphors, while the Cu doped phosphors came next in efficiency, performing equally well under an electron or a UV laser beam (from a HeCd laser at 325 rim). Smaller luminescence peaks were also detected in Ag doped films. Transferred films showed similar luminescent properties to their original films, but with lower intensity. Thus the chemical bath deposition and laser transferring were successful, but the methods can be further improved.
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Mills, David H. "Electroluminescence and ageing of polyethylene." Thesis, University of Southampton, 2012. https://eprints.soton.ac.uk/338950/.

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Electrical insulation is known to age when under electrical stress. One cause of this is thought to relate to the movement and build up of charge within the insulation. The emission of a low level of light from polymeric materials when under electrical stressing is shown to occur before the onset of currently detectable material degradation. This light is termed electroluminescence (EL)and under an ac electric field is thought to relate to the interaction of charge in close proximity to the electrode-polymer interface. Understanding the cause of this light emission gives a very high resolution way of monitoring charge interaction and its influence on material ageing. This report presents the improvement to a system to measure changes in EL emission during the cycle of the applied field (point on wave measurements) under various electric fields. To investigate the relationship between EL and ageing, 100 �m, low-density polyethylene (LDPE) films were ultraviolet (UV) aged in 3 and 7 day intervals up to 17 days. The samples were aged in both air and nitrogen environments to separate the affect of photo-oxidation from photo irradiation reactions on charge movement. Changes as a result of ageing were characterised in terms of optical, chemical and electrical properties. These were investigated using ultraviolet and visible (UV-Vis) and Fourier transform infrared (FTIR) spectroscopy, ac ramp breakdown measurements and dielectric spectroscopy. The accumulation of space charge (SC) was then investigated using the pulsed electro acoustic (PEA) technique. This collection of results were used to explain changes in EL in terms of intensity and phase difference. A model using the bipolar charge recombination theory was then developed using trends shown in the characterising measurements to explain changes in EL. Results support the use of EL as a tool to investigate changes in charge movement very near the electrode-polymer interface.
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Weaver, Michael Stuart. "Electroluminescence from organic light emitting diodes." Thesis, University of Sheffield, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.265610.

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Bedrich, Karl G. "Quantitative electroluminescence measurements of PV devices." Thesis, Loughborough University, 2017. https://dspace.lboro.ac.uk/2134/27303.

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Electroluminescence (EL) imaging is a fast and comparatively low-cost method for spatially resolved analysis of photovoltaic (PV) devices. A Silicon CCD or InGaAs camera is used to capture the near infrared radiation, emitted from a forward biased PV device. EL images can be used to identify defects, like cracks and shunts but also to map physical parameters, like series resistance. The lack of suitable image processing routines often prevents automated and setup-independent quantitative analysis. This thesis provides a tool-set, rather than a specific solution to address this problem. Comprehensive and novel procedures to calibrate imaging systems, to evaluate image quality, to normalize images and to extract features are presented. For image quality measurement the signal-to-noise ratio (SNR) is obtained from a set of EL images. Its spatial average depends on the size of the background area within the EL image. In this work the SNR will be calculated spatially resolved and as (background independent) averaged parameter using only one EL image and no additional information of the imaging system. This thesis presents additional methods to measure image sharpness spatially resolved and introduces a new parameter to describe resolvable object size. This allows equalising images of different resolutions and of different sharpness allowing artefact-free comparison. The flat field image scales the emitted EL signal to the detected image intensity. It is often measured through imaging a homogeneous light source such as a red LCD screen in close distance to the camera lens. This measurement however only partially removes vignetting the main contributor to the flat field. This work quantifies the vignetting correction quality and introduces more sophisticated vignetting measurement methods. Especially outdoor EL imaging often includes perspective distortion of the measured PV device. This thesis presents methods to automatically detect and correct for this distortion. This also includes intensity correction due to different irradiance angles. Single-time-effects and hot pixels are image artefacts that can impair the EL image quality. They can conceivably be confused with cell defects. Their detection and removal is described in this thesis. The methods presented enable direct pixel-by-pixel comparison for EL images of the same device taken at different measurement and exposure times, even if imaged by different contractors. EL statistics correlating cell intensity to crack length and PV performance parameters are extracted from EL and dark I-V curves. This allows for spatially resolved performance measurement without the need for laborious flash tests to measure the light I-V- curve. This work aims to convince the EL community of certain calibration- and imaging routines, which will allow setup independent, automatable, standardised and therefore comparable results. Recognizing the benefits of EL imaging for quality control and failure detection, this work paves the way towards cheaper and more reliable PV generation. The code used in this work is made available to public as library and interactive graphical application for scientific image processing.
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Alshawa, Amer. "AC electroluminescence in thulium-doped zinc sulfide." Ohio : Ohio University, 1988. http://www.ohiolink.edu/etd/view.cgi?ohiou1182778578.

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Dhillon, S. S. "Terahertz intersubband electroluminescence from quantum cascade heterostructures." Thesis, University of Cambridge, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.598519.

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Mid-infrared quantum cascade lasers (QCLs) have been extensively developed since their realisation in 1994, with a spectral range covered from 3.4μm (88THz) to 24μm (12.5THz). This is a direct result of advances in molecular beam epitaxy and band-structure engineering. QCLs are fabricated from multi-quantum well semiconductor heterostructures in which an appropriate engineering of the thickness and composition of the semiconductor layers adjusts the intersubband transition energies, offering considerable design flexibility of the band profile. By application of a suitable electric field and stacking together successive active regions, each injected electron cascades through the device, generating a number of photons. QCLs have shown considerable advances in performance with high powers and room temperature operation demonstrated. Extension of this quantum cascade scheme to the far-infrared, or terahertz (THz) range, is now being investigated, where the lack of sources remains acute. Specifically, operation is sought at energies smaller than the characteristic LO phonon energy of the semiconductor material, where currently no lasing has been shown (<36meV, 9 THz). The dynamics of this spectral range, however, are considerably different to those in the mid-infrared. LO phonon emission is effectively forbidden for subband spacings less than the phonon energy but increases in electron-electron scattering are expected to dominate. Although THz electroluminescence has been shown from cascade structures, systematic investigations into key parameters have not been reported. This dissertation reports a comprehensive study of THz electroluminescence from n-type A1GaAs/GaAs quantum cascade emitters as a basis for understanding the radiative and scattering mechanisms that occur in this spectral range, forming the foundations of the development of a THz semiconductor laser. The electroluminescence was correlated thoroughly with band structure calculations, along with the structural and electrical properties of the samples. The many features observed in the far-infrared were characterised, with the intersubband peaks investigated extensively to confirm their origin.
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Fuhrer, Markus Franz. "Electroluminescence Spectroscopy of Quantum Well Solar Cells." Thesis, Imperial College London, 2010. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.516978.

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Books on the topic "Electroluminescence"

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Shionoya, Shigeo, and Hiroshi Kobayashi, eds. Electroluminescence. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-93430-8.

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Gerd, Mueller, ed. Electroluminescence. San Diego, CA: Academic Press, 2000.

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H, Kafafi Zakya, ed. Organic electroluminescence. Boca Raton, FL: Taylor & Francis, 2005.

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H, Kafafi Zakya, ed. Organic electroluminescence. Boca Raton, FL: Taylor & Francis, 2005.

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H, Kafafi Zakya, ed. Organic electroluminescence. Boca Raton, FL: CRC Press, Taylor & Francis, 2005.

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Kitai, Adrian. Luminescent materials and applications. Hoboken, NJ: John Wiley, 2008.

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Kido, Junji. Yūki EL ni kakero!: Sekaiteki ken'i ga akasu Nihon kigyō ga Ssamusun ni katsu hōhō = Bet on electroluminescence! Tōkyō-to Shibuya-ku: Daiyamondosha, 2013.

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Ōnishi, Toshihiro. Kōbunshi EL zairyō: Hikaru kōbunshi no kaihatsu. Tōkyō: Kyōritsu Shuppan, 2004.

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H, Mauch R., Gumlich Hans-Eckart, and International Workshop on Electroluminescence (8th : 1996 : Berlin, Germany), eds. Inorganic and organic electroluminescence. Berlin: Wissenschaft und Technik, 1996.

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R, Vij D., and Institute of Physics (Great Britain), eds. Handbook of electroluminescent materials. Bristol: Institute of Physics Pub., 2004.

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Book chapters on the topic "Electroluminescence"

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Gumlich, H. E., A. Zeinert, and R. Mauch. "Electroluminescence." In Luminescence of Solids, 221–69. Boston, MA: Springer US, 1998. http://dx.doi.org/10.1007/978-1-4615-5361-8_6.

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Gooch, Jan W. "Electroluminescence." In Encyclopedic Dictionary of Polymers, 260. New York, NY: Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4419-6247-8_4284.

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Weik, Martin H. "electroluminescence." In Computer Science and Communications Dictionary, 489. Boston, MA: Springer US, 2000. http://dx.doi.org/10.1007/1-4020-0613-6_5904.

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Springholz, G., and G. Bauer. "9.7.4 Electroluminescence." In Growth and Structuring, 535–37. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-540-68357-5_102.

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Chadha, Surjit S. "Powder electroluminescence." In Solid State Luminescence, 159–227. Dordrecht: Springer Netherlands, 1993. http://dx.doi.org/10.1007/978-94-011-1522-3_6.

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Lane, Paul A. "Polyfluorene Electroluminescence." In Organic Light-Emitting Devices, 265–301. New York, NY: Springer New York, 2004. http://dx.doi.org/10.1007/978-0-387-21720-8_10.

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Rebohle, Lars, and Wolfgang Skorupa. "Electroluminescence Spectra." In Rare-Earth Implanted MOS Devices for Silicon Photonics, 53–83. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-14447-9_4.

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Rebohle, Lars, and Wolfgang Skorupa. "Electroluminescence Efficiency." In Rare-Earth Implanted MOS Devices for Silicon Photonics, 85–116. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-14447-9_5.

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Bradley, D. D. C., and C. Taliani. "Electroluminescence and Photorefractivity." In Photoactive Organic Materials, 553–57. Dordrecht: Springer Netherlands, 1996. http://dx.doi.org/10.1007/978-94-017-2622-1_40.

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Müller, G. O. "Thin film electroluminescence." In Solid State Luminescence, 133–57. Dordrecht: Springer Netherlands, 1993. http://dx.doi.org/10.1007/978-94-011-1522-3_5.

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Conference papers on the topic "Electroluminescence"

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Jia-yu, Zhang, Gu Pei Fu, Liu Xu, and Tang Jing Fa. "Experimental Study of Low-Voltage -Driven Thin Film Electroluminescence Mechanism." In Optical Interference Coatings. Washington, D.C.: Optica Publishing Group, 1995. http://dx.doi.org/10.1364/oic.1995.thc27.

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Thin film electroluminescent devices are now attracting much attention since they have open up a way to the application to the flat panel display. However, the bases of the physical phenomena governing the electroluminescence have been reported comparatively little. This is due to the difficulties to treat in detail the carrier dynamics of the interface and the bulk in the high electric field (1). In this paper, we study experimentally the field distribution in phosphor layer and the properties of insulator/phosphor interface.
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Burr, T. A., and K. D. Kolenbrander. "A Silicon Solid-State LED: Long-Lived Visible Electroluminescence from Silicon Nanocrystallites." In Microphysics of Surfaces: Nanoscale Processing. Washington, D.C.: Optica Publishing Group, 1995. http://dx.doi.org/10.1364/msnp.1995.msaa2.

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We have constructed and characterized visible electroluminescent devices based on Si nanocrystallite thin films. The key to stable electroluminescent emission is the nature of the Si surface capping layer, which determines the efficiency and stability of the devices. The layers must be transparent to the emitted light, provide sufficient electrical contact to insure carrier transport to the active layer, stabilize the Si surfaces to prevent chemical and electrical degradation, and passivate the dangling surface bonds which would act as non-radiative recombination centers and quench emission. Our devices use Al and ITO (indium tin oxide) electrodes, as well as transparent polymer capping layers to provide the necessary carrier injection and chemical and electronic passivation for the silicon nanocrystallite active layer. Their electrical and optical behavior was evaluated in terms of the I-V characteristics, electroluminescence spectra, and photoluminescence spectra. These devices represent a first step towards developing efficient silicon based light-emitting technology.
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Sarkas, Harry W., Charles D. Merritt, and Zakya H. Kafafi. "Preparation, Optical Spectroscopy, and Fluorescence of Molecular Organic Composites for Light-Emitting Diodes." In Organic Thin Films for Photonic Applications. Washington, D.C.: Optica Publishing Group, 1995. http://dx.doi.org/10.1364/otfa.1995.md.35.

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Electroluminescence from small organic molecules has been known for some time. Thirty years ago, Helfrich and Schneider reported blue-violet electroluminescence in anthracene with an external quantum efficiency as high as 8%.1 This quantum efficiency is much better than that for the best polymer-based light-emitting diode (LED) reported to date.2 In spite of the superior quantum efficiency of molecular-based electroluminescent devices, no major progress was achieved until fairly recently when Tang and VanSlyke reported the first low-voltage organic LED with an external quantum efficiency of 1% (number of photons per electron).3 The emitting layer in this device consists of a thin layer of the metal complex, tris (8-hydroxyquinolinato) aluminum (AlQ3). Later, Littman and Martie showed an enhancement in the electroluminescence quantum efficiency of AlQ3 by doping it with the highly fluorescent laser dyes, Coumarin 540, Coumarin 343, and DCM.4 The paper focuses on a new class of organic composites consisting of highly fluorescent guest molecules dispersed in AlQ3. The electronic and optical properties of organic nanostructures based on these materials are studied, as functions of the luminescent center concentration, via optical and fluorescence spectroscopies. Photoluminescence quantum yields are measured and used to probe the efficiency of energy transfer between host and guest molecules.
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Eda, Goki. "Upconversion electroluminescence in van der Waals tunnel diodes." In JSAP-Optica Joint Symposia. Washington, D.C.: Optica Publishing Group, 2023. http://dx.doi.org/10.1364/jsapo.2023.20p_a602_8.

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Plasmonic tunnel junctions comprising van der Waals semiconductor are an attractive platform where the interplay between inelastically tunneling electrons, surface plasmons, and excitons is expected to give rise to novel light emission phenomena. Here, we report observation of peculiar upconversion electroluminescene in van der Waals tunnel diodes comprising a monolayer transition metal dichalcogenide (TMD) in the electron tunneling pathway. The device exhibits bimodal electroluminescence with a broad low energy band and a narrow high energy band. Interestingly, the high energy emission, which is attributed to the TMD ground exciton, is found to turn on at applied biases significantly lower than the threshold defined by its emission energy whereas the low energy emission, which arises from plasmonic emission, strictly obeys the quantum cut-off (Figure 1). We examine several possible model and show that momentum-indirect excitation of high energy carriers enabled by inelastic electron tunneling is a key component enabling the apparent energy gain.
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Yan Xie and Shihong Qin. "Principle and application of inorganic Electroluminescence and organic Electroluminescence." In 2011 International Conference on Electric Information and Control Engineering (ICEICE). IEEE, 2011. http://dx.doi.org/10.1109/iceice.2011.5777215.

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Yu, S. Q., D. Ding, J. B. Wang, S. R. Johnson, and Y. H. Zhang. "Electroluminescence refrigeration in semiconductors." In 2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference. IEEE, 2006. http://dx.doi.org/10.1109/cleo.2006.4628594.

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Werner, A. T., Hugh J. Byrne, Diarmuid F. O'Brien, and Siegmar Roth. "Electroluminescence in fullerene crystals." In SPIE's 1994 International Symposium on Optics, Imaging, and Instrumentation, edited by Zakya H. Kafafi. SPIE, 1994. http://dx.doi.org/10.1117/12.196129.

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Freitag, Marcus. "Electroluminescence in Carbon Nanotubes." In ELECTRONIC PROPERTIES OF NOVEL NANOSTRUCTURES: XIX International Winterschool/Euroconference on Electronic Properties of Novel Materials. AIP, 2005. http://dx.doi.org/10.1063/1.2103913.

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Friend, R. "Electroluminescence in conjugated polymers." In The European Conference on Lasers and Electro-Optics. Washington, D.C.: Optica Publishing Group, 1994. http://dx.doi.org/10.1364/cleo_europe.1994.cwe7.

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Friend, Richard. "Electroluminescence from conjugated polymers." In Organic Thin Films for Photonic Applications. Washington, D.C.: Optica Publishing Group, 1995. http://dx.doi.org/10.1364/otfa.1995.tua.1.

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Conjugated polymers can be processed as thin films, and can be used as the emissive or charge-transport layers in thin-film electroluminescent diodes. I will discuss the present understanding of the operation these devices, including the improvement to the efficiency that can be produced by the use of heterojunction devices.
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Reports on the topic "Electroluminescence"

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Bernard, J. E., G. Negley, S. Sarwate, C. B. Cooper, and F. E. Williams. Thin-Film Electroluminescence. Fort Belvoir, VA: Defense Technical Information Center, July 1985. http://dx.doi.org/10.21236/ada158352.

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Zhang, Xuejun, Ashok S. Shetty, and Samson A. Jenekhe. Electroluminescence and Photophysical Properties of Polyquinolines. Fort Belvoir, VA: Defense Technical Information Center, August 1999. http://dx.doi.org/10.21236/ada366991.

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Zhang, Yong-Hang. Time-Resolved IR Electroluminescence Spectroscopy System. Fort Belvoir, VA: Defense Technical Information Center, May 2006. http://dx.doi.org/10.21236/ada461015.

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Garter, M., R. Birkhahn, A. J. Steckl, and J. Scofield. Visible and Infrared Rare-Earth Activated Electroluminescence from Erbium Doped GaN. Fort Belvoir, VA: Defense Technical Information Center, January 1999. http://dx.doi.org/10.21236/ada457728.

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Jenekhe, Samson A., Xuejun Zhang, X. L. Chen, Vi-En Choong, and Yongli Gao. WITHDRAWN: Finite Size Effects on Electroluminescence of Nanoscale Semiconducting Polymer Heterojunctions. Fort Belvoir, VA: Defense Technical Information Center, September 1996. http://dx.doi.org/10.21236/ada314623.

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Zou, Lijuan. Device Optimization and Transient Electroluminescence Studies of Organic light Emitting Devices. Office of Scientific and Technical Information (OSTI), August 2003. http://dx.doi.org/10.2172/816439.

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Smith, D. B. ELECTROLUMINESCENT MATERIAL FOR FLAT PANEL DISPLAY. Office of Scientific and Technical Information (OSTI), November 2000. http://dx.doi.org/10.2172/885573.

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Sun, Sey-Shing. Development of a Manufacturable Blue Electroluminescent (EL) Phosphor Process for the Production of White Monochrome Thin Film Electroluminescent (TFEL) and Full Color Active Matrix Electroluminescent (AMEL) Displays. Fort Belvoir, VA: Defense Technical Information Center, November 2002. http://dx.doi.org/10.21236/ada408952.

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Jenekhe, Samson A., and Xuejun Zhang. Tunable Multicolor Electroluminescent Polymer Devices for Full Color Displays. Fort Belvoir, VA: Defense Technical Information Center, August 1999. http://dx.doi.org/10.21236/ada366990.

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Auflick, J. Human factors evaluation of electroluminescent display. number sign. 1. Office of Scientific and Technical Information (OSTI), August 1989. http://dx.doi.org/10.2172/5372081.

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