Relevant bibliographies by topics / Electro-optic devices

Academic literature on the topic 'Electro-optic devices'

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Published: 4 June 2021
Last updated: 20 February 2023

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Journal articles on the topic "Electro-optic devices"

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Huang, Lidu. "Novel electro-optic devices." International Journal of Applied Electromagnetics and Mechanics 22, no. 1-2 (October 21, 2005): 3–10. http://dx.doi.org/10.3233/jae-2005-687.

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Yagi, Shogo, and Kazuo Fujiura. "Electro-optic KTN Devices." Physics Procedia 56 (2014): 40–47. http://dx.doi.org/10.1016/j.phpro.2014.08.093.

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Wang, Yan, Tongtong Liu, Jiangyi Liu, Chuanbo Li, Zhuo Chen, and Shuhui Bo. "Organic electro-optic polymer materials and organic-based hybrid electro-optic modulators." Journal of Semiconductors 43, no. 10 (October 1, 2022): 101301. http://dx.doi.org/10.1088/1674-4926/43/10/101301.

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Abstract High performance electro-optic modulator, as the key device of integrated ultra-wideband optical systems, have become the focus of research. Meanwhile, the organic-based hybrid electro-optic modulators, which make full use of the advantages of organic electro-optic (OEO) materials (e.g. high electro-optic coefficient, fast response speed, high bandwidth, easy processing/integration and low cost) have attracted considerable attention. In this paper, we introduce a series of high-performance OEO materials that exhibit good properties in electro-optic activity and thermal stability. In addition, the recent progress of organic-based hybrid electro-optic devices is reviewed, including photonic crystal-organic hybrid (PCOH), silicon-organic hybrid (SOH) and plasmonic-organic hybrid (POH) modulators. A high-performance integrated optical platform based on OEO materials is a promising solution for growing high speeds and low power consumption in compact sizes.
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Dalton, L. R. "Organic electro-optic materials." Pure and Applied Chemistry 76, no. 7-8 (January 1, 2004): 1421–33. http://dx.doi.org/10.1351/pac200476071421.

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The macroscopic electrooptic activity of organic materials depends upon the molecular hyperpolarizability, beta, of individual organic chromophores and upon the product of number density, N, and noncentrosymmetric order, <cos3theta>, of the chromophores in a hardened polymer lattice. Quantum and statistical mechanical calculations provide the basis for rational improvement of these parameters leading to electro-optic coefficients (at telecommunication wavelengths) of greater than 100 pm/V (a factor of 3 larger than values for the best inorganic material, lithium niobate). Such calculations also provide insight into what further improvements can be expected. Owing to low and relatively dispersionless dielectric constants and refractive indicies, organic materials facilitate the fabrication of devices with 3 dB operational bandwidths of greater than 100 GHz. Moreover, robust and low optical loss materials can be fabricated by design. An under-appreciated advantage of organic electro-optic materials is their processability, and a variety of stripline, cascaded prism and super-prism, and ring microresonator devices are readily fabricated. Conformal, flexible, and three-dimensional devices are also readily produced. With ring microresonator devices, active wavelength division multiplexing, optical network reconfiguration, and laser frequency tuning are straightforwardly accomplished.
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Nann, Thomas, and William M. Skinner. "Quantum Dots for Electro-Optic Devices." ACS Nano 5, no. 7 (July 5, 2011): 5291–95. http://dx.doi.org/10.1021/nn2022974.

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Raghunathababu and Siddaiah P. "ELECTRO OPTIC MODULATOR DEVICES FOR HIGH SPEED DATA IN OPTICAL COMMUNICATION." International Journal of Research -GRANTHAALAYAH 3, no. 10 (October 31, 2015): 38–42. http://dx.doi.org/10.29121/granthaalayah.v3.i10.2015.2930.

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Electro Optic devices in fiber optic Communication systems are playing a Vital Role in telecommunication infrastructure for worldwide broadband networks. Wide bandwidth of signal transmission with low delay, wide transmission bandwidth with less latency, the transmission medium for long distance with high data rate transmission. This paper gives an overview of Electro optic devices for fiber optic systems and their key technologies, their technological trend towards the next generation.
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Oh, Min-Cheol Oh, Wol-Yon Hwang Hwang, and Jang-Joo Kim Kim. "Integrated-Optic Polarization Controlling Devices Using Electro-Optic Polymers." ETRI Journal 18, no. 4 (January 1, 1997): 287–99. http://dx.doi.org/10.4218/etrij.97.0197.0045.

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BECHTEL, JAMES, JAMES MENDERS, and DE YU ZANG. "Electro-Optic Polymer Integrated Optic Devices and Future Applications." Fiber & Integrated Optics 22, no. 4 (January 1, 2003): 211–24. http://dx.doi.org/10.1080/01468030303813.

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BECHTEL, JAMES. "Electro-Optic Polymer Integrated Optic Devices and Future Applications." Fiber and Integrated Optics 22, no. 4 (January 2003): 211–24. http://dx.doi.org/10.1080/01468030390208411.

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Nguimdo, Romain Modeste, Pere Colet, and Claudio Mirasso. "Electro-Optic Delay Devices With Double Feedback." IEEE Journal of Quantum Electronics 46, no. 10 (October 2010): 1436–43. http://dx.doi.org/10.1109/jqe.2010.2050055.

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Dissertations / Theses on the topic "Electro-optic devices"

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DeRose, Christopher Todd. "Electro-Optic Polymers: Materials and Devices." Diss., The University of Arizona, 2009. http://hdl.handle.net/10150/195650.

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Electro-optic (EO) polymers are an attractive alternative to inorganic nonlinear materials. EO polymers with a Pockel's coefficient, r33, greater than 320 pm/V have been recently demonstrated. In addition to their high EO activity, EO polymers have the additional benefit that their dielectric constants at optical and millimeter wave frequencies are closely matched which allow for bandwidths which are limited only by the resistive losses of traveling wave electrodes. The amorphous nature of the host polymer makes heterogeneous integration of the materials on any substrate possible. The devices which will have the most immediate impact based on these recent materials developments are EO waveguide modulators. Performance benchmarks of less than 6 dB insertion loss, sub-volt Vpi and greater than 100 GHz bandwidth have been achieved separately however, the challenge of achieving all of these benchmarks in a single device has not yet been met.The aim of this dissertation is to optimize passive materials to achieve efficient in device poling of EO polymers, optimize the chromophore loading of the active polymers and to optimize waveguide modulators for device performance within a particular system, analog RF photonic links. These optimizations were done by defining figures of merit for the materials and modulators. This research strategy has led to significant improvements in poling efficiency as well as modulators with record low insertion losses which maintain a low half-wave voltage; on the order of 1 - 2 Volts. Using this optimization strategy and state of the art EO polymers, devices which meet or surpass the benchmark performance values in all categories are expected in the near future.
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Taboada, John Martin. "Polymer electro-optic and thermo-optic devices for optical interconnects /." Full text (PDF) from UMI/Dissertation Abstracts International, 2000. http://wwwlib.umi.com/cr/utexas/fullcit?p3023563.

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Choy, Wallace Chik-Ho. "Modelling of acousto-optic and electro-optic quantum-wells modulation devices." Thesis, University of Surrey, 1998. http://epubs.surrey.ac.uk/843772/.

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In this thesis, the surface acoustic waves (SAWs) and quantum well (QW) interdiffusion technologies are used to develop modulation devices including electrooptic and electro-absorption QW modulators. The modulation devices are crucial components for generating optical signals in opto-electronic circuits in the use of communication systems. The propagation of SAWs and it effects on a III-V semiconductor QW are modelled to determine the change of the QW subband structure. The change of optical properties is evaluated so that the optical modulators using SAWs can be studied and optimised. For the interdiffusion technology, the constituent atom composition after interdiffusion is modelled by solving the diffusion equations. The modifications of the QW subband structure which change the QW optical properties are studied here for the use of the QW modulators and lasers. SAWs are generated by interdigital transducers deposited on the top surface of device structures. Our aims here are to optimise the change of optical properties, including the change of the QW refractive index and absorption coefficient and to simplify the structure of the transducer by increasing and reducing the SAW wavelength and power respectively. The theoretical results show that by optimising the QW structures in a stack from a single QW to a diffused QW (DFQW) and pairs of asymmetric double QW (DQW), the optical change can be enhanced 100 times as compared to conventional bulk SAW modulators. Besides, the SAW frequency and power can be reduced to ~100MHz and few mW per SAW wavelength respectively. Recently, SAWs with a frequency of ~ 100MHz have been demonstrated in single QW by others. These suggest that SAW-QW modulators can be realised in the near future. DFQWs used as both the passive cladding regions and active region of modulation devices are studied here. The results show that an electro-optical phase modulator with disorder delineated optical confinement is comparable to existing phase modulators. We also propose to use DFQWs as the active region of optical devices to produce TE and TM modes polarisation insensitive optical properties in both AlGaAs/GaAs and InGaAsP/InP QWs. At the same time, InGaAsP DFQW have been demonstrated by others as the polarisation insensitive QW amplifiers. This indicates the potential of DFQW to realise the polarisation insensitive QW optical devices.
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Wallace, Chik-Ho Choy. "Modelling and electro-optic quantum-wells modulation devices." Thesis, University of Surrey, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.267967.

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Chen, Jianxiao. "Tunable electro-optic devices for fiber optical RF signal processing." Connect to a 24 p. preview or request complete full text in PDF format. Access restricted to UC campuses, 2006. http://wwwlib.umi.com/cr/ucsd/fullcit?p3203495.

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Thesis (Ph. D.)--University of California, San Diego, 2006.
Title from first page of PDF file (viewed March 1, 2006). Available via ProQuest Digital Dissertations. Vita. Includes bibliographical references.
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Mason, Karen B. "An electro-optic logic system employing liquid crystal display devices." Thesis, University of Manchester, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.329084.

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Jobanputra, Manish C. "Investigation of Organic Thin Films for Application in Electro-Optic Devices." University of Cincinnati / OhioLINK, 2002. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1017755544.

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Gan, Haiyong. "Electro-optic Polymer Based Fabry-Perot Interferometer Devices for Optoelectronic Applications." Diss., The University of Arizona, 2008. http://hdl.handle.net/10150/195839.

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Fabry-Perot interferometer (FPI) devices are designed based on the electro-optic (EO) activities of nonlinear optical (NLO) polymer materials for tunable optical filters (TOFs) and spatial light modulators (SLMs). The performance of the EO polymer based FPI devices is theoretically modeled with first order approximation on the FPI cavity interface phase dispersion. NLO materials including TCBD coupled hybrid sol-gel, AJL8/amorphous polycarbonate (APC), and AJLS102/APC are incorporated in FPI structures with distributed Bragg reflector mirrors and transparent conducting oxide electrodes for TOFs. High finesse (over 200), low drive voltage (10 dB isolation ratio with 5 V), and fast settling time (about sub-millisecond) are achieved. The physical origin of the large tunabilities is explored and the contributions from EO effect and inverse piezoelectric effect are analyzed. EO polymer SWOHF3ME/APC is employed in FPI devices with simplified structures for SLMs. Modulation beyond megahertz level is achieved with constant modulation ratio from DC frequency to high operation speed. The operation speed can be potentially over gigahertz with improved device and drive circuit design. When the EO polymer based SLM is configured to work at near the resonance band of the NLO material, the spectral tunability is increased due to resonance enhanced EO activity and the SLM performance is significantly improved. The EO polymer based FPI devices can be further optimized and are promising candidates for many optoelectronic applications.
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Wu, Xiaohua. "Field simulation and calibration in external electro-optic sampling /." *McMaster only, 1996.

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Tulli, Domenico. "Micro-nano structured electro-optic devices in LiNbO3 for communication and sensing." Doctoral thesis, Universitat Politècnica de Catalunya, 2012. http://hdl.handle.net/10803/81118.

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A material that is enabling integrated optics is the ferroelectric crystal Lithium Niobate (LiNbO3), which has excellent electro-optical, acousto-optical and nonlinear optical properties. Moreover, it can be doped with laser-active ions and allows for simple fabrication of low-loss optical waveguides. The broad aim of this work is to develop and introduce advanced micro- and nano-fabrication techniques for LiNbO3 and a new class of integrated based telecommunication and sensing devices. The techniques developed include precise micro-domain inversion, etching, bonding and thin film fabrication. From a device point of view, domain inversion is used to improve the electro-optic response of LiNbO3 waveguide modulators in terms of bandwidth and driving voltage. With respect to standard single-domain structures, larger bandwidths and lower driving voltages can be obtained, thus achieving figure of merits for the electro-optic response that are up to 50% larger. As a demonstration, a chirp-free modulator, having ~2V switching voltage and bandwidth of 15 GHz, was fabricated by placing the waveguide arms of a Mach-Zehnder interferometer in opposite do- main oriented regions. The modulator could be driven in a single-drive configuration with inexpensive low-voltage drivers, e.g. a SiGe based RF amplifier, typically used for electro-absorption devices. A further aspect of this work focuses on the development of devices for the precise measurement of strong electric fields, which are typically generated in power stations and transmission lines. Therefore, two new integrated electric field sensors are proposed, each of which exploits the aforementioned micro-fabrication techniques. The first device is based on a proton-exchange waveguide at cut-off, centered on a few microns wide domain-inverted region in a z-cut LiNbO3 substrate. The sensor’s performance is demonstrated by detecting DC fields up to 2.6 MV/m and high-frequency (1.1 GHz) fields ranging from 19 V/m to 23 kV/m. The second proposed device is fabricated by direct bonding a z-cut LiNbO3 substrate on top of a cut-off proton-exchanged waveguide centered on the domain-inverted region. It is possible to detect electric fields as high as 2 MV/m at low frequency with improved sensitivity compared to the previous device. These features make the devices suitable for use in high electric field and harsh conditions without endangering the operator. The conclusions section of the Thesis presents possible future developments which will contribute to increase the impact of the work in the optical telecommunication and sensing industries. After a brief introduction, the second chapter describes the basic properties of the material used in the thesis work: Lithium Niobate (LiNbO3). This includes the properties related to its ferroelectric crystal structure and the subsequent applications. Chapter three presents the micro-fabrication techniques, over 3 inch LiNbO3 wafers, developed at ICFO during this work. The chapter begins with a description of waveguides fabrication by Annealed Proton Exchange (APE). The mid-part of the chapter outlines the fabrication procedure for domain inversion using electric field poling technique and liquid electrodes while the last part describes the bonding technique to permanently join LiNbO3 with different substrates, namely Si, SiO2 and another LiNbO3. Moreover, lapping and polishing techniques for thin plate fabrication are presented. The forth chapter firstly introduces the fundamentals and main characteristics of travelling-wave LiNbO3 Mach-Zehnder modulators. Secondly, a new modulator design is proposed. It is based on domain inverted LiNbO3, with improved performance with respect to existing devices. The modulator characterization and the results obtained from the new design are presented. The chapter five begins with a literature review about DC and low frequency electric field optical sensors. Afterwards, two novel all-optical electric field sensors are presented. Both devices are based on a proton-exchange, domain inversion and bonding techniques. The sensors characterization, including the test set-up and the performance results are discussed. Finally, in chapter six, several conclusions on the thesis work and possible future work directions are presented.
Uno de los materiales que permite el avance de la tecnología de dispositivos ópticos integrados es el niobato de litio (LiNbO3). Se trata de un cristal ferro-eléctrico, con excelentes propiedades electro-ópticas, acusto-ópticas y no lineales. Además, es posible fabricar guías de onda de bajas pérdidas mediante las técnicas de intercambio protónico (PE) y difusión de titanio. El objetivo principal de este trabajo es el desarrollo y la introducción tanto de las técnicas avanzadas de micro-nano fabricación para el niobato de litio como de nuevos dispositivos ópticos integrados para las comunicaciones ópticas y la detección de campo eléctricos de alto voltaje. La técnicas de fabricación desarrolladas incluyen inversión de dominios mediante la técnica de poling de alto voltaje, grabado, bonding y capas delgadas. Desde el punto de vista de los dispositivos, la inversión de dominios ha sido utilizada para mejorar la respuesta electro-óptica de los moduladores en LiNbO3 en términos de ancho de banda (BW) y voltaje de control (Vπ). En comparación con los moduladores comerciales actuales de un único dominio, con esta técnica es posible obtener mayores anchos de banda y menores voltajes de control resultando en un aumento del 50% del producto BW·Vπ. Para demonstrar la eficacia de la técnica desarrollada, se ha fabricado un modulador Mach-Zehnder chirp-free poniendo los brazos del interferómetro en dos regiones de dominios opuestos. De las mediciones efectuadas se han obtenidos valores de voltaje de control de 2V y ancho de banda de 15 GHz. Estos resultados muestran que los dispositivos desarrollados pueden reducir el coste total de funcionamiento, ya que permiten el uso de controladores económicos de Si-Ge que operan en el rango de los 2V. Otro aspecto de este trabajo se enfoca en el desarrollo de dispositivos para medir, de forma exacta, altos campos eléctricos, que normalmente son generados en las centrales eléctricas y en las líneas de transmisión. Por este motivo, se han desarrollado dos sensores de campo eléctrico mediante las técnicas de micro-fabricación anteriormente mencionadas. El primer dispositivo está basado en una guía fabricada mediante intercambio protónico en LiNbO3 z-cut, diseñada a la frecuencia de corte y centrada en una región de dominio invertido de 10 micras de ancho y 10mm de largo. El rendimiento del dispositivo se ha demostrado detectando campos a baja frecuencia con amplitudes de hasta 2.6MV/m y campos a la frecuencia de 1.1GHz con amplitudes desde 19V/m hasta 23kV/m. El segundo dispositivo se ha fabricado mediante bonding directo de un sustrato de LiNbO3 encima de una guía PE diseñada a la frecuencia de corte y centrada en una región de dominio invertido de 10 micras de ancho y 10mm de largo. El dispositivo se ha caracterizado a baja frecuencia y ha sido posible medir campos eléctricos de hasta 2MV/m con un aumento de sensibilidad comparado con el primer dispositivo fabricado sin la técnica del bonding. Estos resultados muestran que los dispositivos desarrollados pueden ser utilizados para mediciones de campos eléctricos intensos en condiciones peligrosas sin ningún riesgo para el operador. Después de una breve introducción en el Capítulo 1 de esta Tesis, las propiedades del LiNbO3 se discuten en el Capítulo 2, prestando especial atención a sus características ópticas y electro-ópticas. El Capítulo 3 presenta las técnicas de micro fabricación desarrolladas durante este trabajo sobre sustratos de 3 pulgadas. En particular, se presentan las técnicas de fabricación de guías mediante intercambio protónico, de inversión de dominios mediante poling de alto voltaje, de bonding de LiNbO3 con diferentes sustratos (LiNbO3 , SiO2, Si) y la fabricación de capas delgadas. El Capítulo 4 ofrece una introducción sobre los moduladores interferométricos Mach-Zehnder de onda propagada, presentando sus principales características. Además se presenta una nueva estructura de modulador basada sobre inversión de dominios y los resultados obtenidos. El Capítulo 5 empieza con una introducción sobre los sensores de campo eléctrico y después se presentan dos nuevos sensores de campo eléctrico completamente ópticos fabricados en LiNbO3 z-cut. Los dispositivos están basados en las técnicas de intercambio protónico, inversión de dominios y bonding directo. Finalmente, en el Capítulo 6 se presentan las conclusiones y posibles desarrollos futuros que pueden contribuir al aumento del impacto de este trabajo en las industrias de comunicaciones ópticas y de detección.
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Books on the topic "Electro-optic devices"

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Center for Occupational Research and Development (U.S.), ed. Laser/electro-optic devices: Course 7. Waco, Tex: Center for Occupational Research and Development, 1986.

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Center for Occupational Research and Development (U.S.). Laser and electro-optic components. Waco, Tex: Center for Occupational Research and Development, 1988.

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1943-, Bhalla A. S., Vogel E. M, Nair K. M, and American Ceramic Society, eds. Electro-optics and nonlinear optic materials. Westerville, Ohio: American Ceramic Society, 1990.

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Chauhan, D. The application of electro-optic devices to the display of stereoscopic images. Leicester: De Montfort University, 1995.

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Singer, Kenneth D. "Poling of microwave electro-optic devices": Final technical report : contract # NCC3-431. [Washington, DC: National Aeronautics and Space Administration, 1997.

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Coles, Marcus James. Electro-optic studies of polymer liquid crystal systems and their implications for devices. Manchester: University of Manchester, 1995.

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Fu, Xiaoning. Guang dian ding wei yu guang dian dui kang: Electro-optic Ranging & Countermeasure. Beijing: Dian zi gong ye chu ban she, 2012.

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Conference on Lasers and Electro-optics (1996 Anaheim, Calif.). Laser and electro-optic applications program: CLEO-LEAP : Anaheim Convention Center, June 4-6, 1996. Washington, DC: Optical Society of America, 1996.

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International Congress on Applications of Lasers and Electro-optics. (6th 1987 San Diego, Calif.). Focus on electro-optic sensing and measurement: Proceedings of the 6th International Congress on Applications of Lasers and Electro-optics ICALEO '87, 8-12 November 1987, San Diego, California. Bedford: IFS Publications, 1988.

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Marchenko, Aleksey, and Mihail Nemcov. Electronics. ru: INFRA-M Academic Publishing LLC., 2023. http://dx.doi.org/10.12737/1587595.

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The material of module 2 "Electronics" is systematically presented in accordance with the modern university program of the discipline " Electrical Engineering and Electronics" for non-electrotechnical areas of training of bachelors and certified specialists. The element base of semiconductor electronics devices is considered: classification, voltage and frequency characteristics, features of the use of electronic devices in various operating modes are given. The principles of construction and functioning of typical analog, pulse and digital devices are described in detail. A separate chapter is devoted to the principles of converting light energy into electrical energy and vice versa, the design and operation of optoelectronic devices and fiber- optic lines of information transmission. Meets the requirements of the federal state educational standards of higher education of the latest generation. For students of higher educational institutions studying in non-electro- technical areas of bachelor's and graduate training.
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Book chapters on the topic "Electro-optic devices"

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Voges, E. "Integrated Electro-optic Devices." In Springer Proceedings in Physics, 150–58. Berlin, Heidelberg: Springer Berlin Heidelberg, 1987. http://dx.doi.org/10.1007/978-3-642-71907-3_12.

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Chandrasekhar, Prasanna. "Electro-Optic and Optical Devices." In Conducting Polymers, Fundamentals and Applications, 509–26. Boston, MA: Springer US, 1999. http://dx.doi.org/10.1007/978-1-4615-5245-1_18.

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Chandrasekhar, Prasanna. "Electro-Optic and Optical Devices." In Conducting Polymers, Fundamentals and Applications, 671–84. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-69378-1_41.

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Raynes, E. P. "Electro-optic Devices Using Liquid Crystals." In Springer Proceedings in Physics, 99–109. Berlin, Heidelberg: Springer Berlin Heidelberg, 1987. http://dx.doi.org/10.1007/978-3-642-71907-3_9.

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Lytel, R., G. F. Lipscomb, J. Thackara, J. Altman, P. Elizondo, M. Stiller, and B. Sullivan. "Nonlinear and Electro-Optic Organic Devices." In Nonlinear Optical and Electroactive Polymers, 415–26. Boston, MA: Springer US, 1988. http://dx.doi.org/10.1007/978-1-4613-0953-6_26.

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Wang, Jing. "CMOS-Compatible Silicon Electro-Optic Modulator." In CMOS-Compatible Key Engineering Devices for High-Speed Silicon-Based Optical Interconnections, 15–67. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-13-3378-1_2.

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Grell, Martin. "Electronic and Electro-Optic Molecular Materials and Devices." In Nanoscale Science and Technology, 282–342. Chichester, UK: John Wiley & Sons, Ltd, 2005. http://dx.doi.org/10.1002/0470020873.ch6.

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Šrobár, F. "Nature of Internal Feedback in the Self-Electro-Optic Effect Devices." In Heterostructure Epitaxy and Devices, 309–12. Dordrecht: Springer Netherlands, 1996. http://dx.doi.org/10.1007/978-94-009-0245-9_56.

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Bowman, D., and S. Bhandarkar. "Sol-Gel Processing of Batio3 for Electro-Optic Waveguide Devices." In Ceramic Transactions Series, 85–98. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2012. http://dx.doi.org/10.1002/9781118407233.ch7.

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Dykaar, Douglas R., Roman Sobolewski, James M. Chwalek, Thomas Y. Hsiang, and Gerard A. Mourou. "Electro-Optic Sampler for Characterization of Devices in a Cryogenic Environment." In A Cryogenic Engineering Conference Publication, 1097–104. Boston, MA: Springer US, 1988. http://dx.doi.org/10.1007/978-1-4613-9874-5_132.

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Conference papers on the topic "Electro-optic devices"

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Ticknor, A. J., G. F. Lipscomb, R. Lytel, M. A. Stiller, and J. I. Thackara. "Electro-Optic Polymer Waveguide Devices." In Optical Computing '88, edited by Pierre H. Chavel, Joseph W. Goodman, and Gerard Roblin. SPIE, 1989. http://dx.doi.org/10.1117/12.947889.

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Bechtel, James H., James H. Menders, and De Yu Zang. "Electro-optic polymer integrated optic devices and future applications." In Integrated Optoelectronics Devices, edited by James G. Grote and Toshikuni Kaino. SPIE, 2003. http://dx.doi.org/10.1117/12.479451.

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Lentine, Anthony L. "Application Specific Self Electro-optic Effect Devices." In Nonlinear Optics. Washington, D.C.: Optica Publishing Group, 1992. http://dx.doi.org/10.1364/nlo.1992.mc1.

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A few years ago, the predominant area of research in optical computing devices was to try to develop devices that could behave as optical logic gates or more specifically NOR gates. In theory, one could optically interconnect these NOR gates to implement arbitrary digital functions and ultimately a digital optical computer. Bistable devices based on non-linear optical materials in Fabry-Perot etalons were among those proposed, for these NOR gates [1,2] A variety of optoelectronic devices have also been investigated. One group of devices called self electro-optic effect devices (SEEDs) rely on changes in the optical absorption that can be induced by changes in an electric field perpendicular to the thin semiconductor layers in quantum well material [3,4]. If we place the quantum well material in the intrinsic region of a reverse biased diode, then as we apply a voltage across the diode we can change its absorption. We can also use the same device as a detector, generating photocurrent in response to an incident light beam. In a SF.FD, the photocurrent generated by one or more of these detectors causes the voltage to change across one or more modulators. Thus, a SEED has optical inputs for controlling optical outputs. One particularly useful device, the symmetric SEED (S-SEED) [5] consists of two of these quantum well p-i-n modulator/detector diodes connected electrically in series. It has the inherent characteristics of a set-reset latch, but can also do logic functions (such as NOR) by using a preset beam. It uses pairs of complementary optical signals, so it is insensitive to optical power supply fluctuations and operates with a wide dynamic range (1 nW - 500 μW). Uniform arrays of devices with as many as 32768 S-SEEDs have been made [6] and several system demonstrations have now been built using these devices [7].
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4

Ali, Khalid A. M., and Anthony J. Vickers. "Electro-optic probing of GaAs." In Optoelectronics '99 - Integrated Optoelectronic Devices, edited by Peter Blood, Akira Ishibashi, and Marek Osinski. SPIE, 1999. http://dx.doi.org/10.1117/12.356940.

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Lytel, R., G. F. Lipscomb, J. Thackara, J. Altman, P. Elizondo, M. Stiller, and B. Sullivan. "Advances In Organic Electro-Optic Devices." In Advances in Nonlinear Polymers and Inorganic Crystals, Liquid Crystals, and Laser Media, edited by Solomon Musikant. SPIE, 1988. http://dx.doi.org/10.1117/12.941974.

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Jiang, Hua, Y. K. Zou, Q. Chen, K. K. Li, R. Zhang, Y. Wang, H. Ming, and Zhiqiang Zheng. "Transparent electro-optic ceramics and devices." In Photonics Asia 2004, edited by Hai Ming, Xuping Zhang, and Maggie Yihong Chen. SPIE, 2005. http://dx.doi.org/10.1117/12.582105.

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Pannell, Christopher N., Harald J. Gnewuch, and Jon Ward. "Some new developments in acousto-optic and electro-optic devices." In Integrated Optoelectronic Devices 2004. SPIE, 2004. http://dx.doi.org/10.1117/12.527814.

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Lu, Xuejun, and Miao Li. "A miniature electro-optic switch array." In Integrated Optoelectronic Devices 2007, edited by Shibin Jiang and Michel J. F. Digonnet. SPIE, 2007. http://dx.doi.org/10.1117/12.712476.

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Bechtel, James H., Weiping Lin, Yongqiang Shi, and Araz Yacoubian. "Electro-optic polymer integrated optic devices for space applications." In International Symposium on Optical Science and Technology, edited by Edward W. Taylor. SPIE, 2000. http://dx.doi.org/10.1117/12.405362.

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Ashley, Paul R., and Thomas A. Tumolillo. "New poling techniques for electro-optic polymer devices." In Integrated Photonics Research. Washington, D.C.: Optica Publishing Group, 1991. http://dx.doi.org/10.1364/ipr.1991.tha7.

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Much progress has been made in the development of electro-optic (EO) polymers for guided-wave device applications.1-4 Reported here are techniques that use the device electrodes directly for poling. A TE device is demonstrated in which surface electrodes were used to provide alignment parallel to the substrate surface requiring no ground plane. A novel TM device structure was also demonstrated in which a push-pull electrode was poled with counteraligned fields so that the signal field is coaligned, thus requiring only a single voltage source. This development permits polymeric devices the same advantages as LiNbO3.
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Reports on the topic "Electro-optic devices"

1

Watterson, C. E. Advanced Electro-Optic Surety Devices. Office of Scientific and Technical Information (OSTI), May 1997. http://dx.doi.org/10.2172/527946.

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2

Patel, Jay S. Fast Electro-Optic Devices for Next Generation Optical Cross-Connects. Fort Belvoir, VA: Defense Technical Information Center, September 2001. http://dx.doi.org/10.21236/ada397966.

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Bromenshenk, Jerry J., Edwin H. Abbott, David Dickensheets, Richard P. Donovan, J. D. Hobbs, Lee Spangler, Michele A. McGuirl, et al. Investigation of Electron Transfer-Based Photonic and Electro-Optic Materials and Devices. Office of Scientific and Technical Information (OSTI), March 2008. http://dx.doi.org/10.2172/926173.

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4

Hill, Richard A. Development of Highly Active Electro-Optic Polymers for In-Line Fiber Photonic Devices. Fort Belvoir, VA: Defense Technical Information Center, March 1998. http://dx.doi.org/10.21236/ada345658.

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Jain, Ravinder. Novel All-Fiber Devices Based on the Electro-Optic Effect in Poled Fused Silica. Fort Belvoir, VA: Defense Technical Information Center, March 2002. http://dx.doi.org/10.21236/ada401209.

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Talbot, Pierre J., and Joanne H. Maurice. Polycrystalline PLZT/ITO Ceramic Electro-Optic Phase Gratings: Electro- Optically Reconfigurable Diffractive Devices for Free-Space and In-Wafer Interconnects. Fort Belvoir, VA: Defense Technical Information Center, September 1994. http://dx.doi.org/10.21236/ada285861.

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Battiato, James M., Thomas W. Stone, Miles J. Murdocca, Rebecca J. Bussjager, and Paul R. Cook. Free Space Optical Memory Based on Vertical Cavity Surface Emitting Lasers and Self-Electro-Optic Effect Devices. Fort Belvoir, VA: Defense Technical Information Center, April 1995. http://dx.doi.org/10.21236/ada297049.

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Thomas, Jayan. Printed Biopolymer-Based Electro-Optic Device Components. Fort Belvoir, VA: Defense Technical Information Center, July 2013. http://dx.doi.org/10.21236/ada583167.

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