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Relevant bibliographies by topics / Electrical Spin Injection

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Journal articles

Academic literature on the topic 'Electrical Spin Injection'

Author: Grafiati

Published: 6 September 2023

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Journal articles on the topic "Electrical Spin Injection"

1

Mi, Yi Lin, and Jiang Nan Gao. "Effect of Electric-Field on Spin Injection Efficiency in the Organic Semiconductors." Materials Science Forum 852 (April 2016): 704–7. http://dx.doi.org/10.4028/www.scientific.net/msf.852.704.

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The spin injection efficiency in the ferromagnet/ organic semiconductors system (FM/OSE) was studied under an external electric-field. It is found that the spin injection efficiency can be strongly influenced by the spin-dependent electrical conductivity and the downstream spin diffusion length of polarons. With the increase of external electric-field, the downstream spin diffusion length increases and makes the spin-dependent electrical conductivity increase, too. So the spin injection efficiency is enhanced. When the external electric-field increases from 1 to 10 mV/μm at T=80K, the spin injection efficiency increases about 20%. It seems that the downstream spin diffusion length is an significant factor to affect the spin injection efficiency in the FM/ OSE under an external electric-field.

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2

Mi, Yi Lin, Feng Yan Liu, and Jiang Nan Gao. "Spin Injection in a Ferromagnetic/Organic System." Advanced Materials Research 502 (April 2012): 416–20. http://dx.doi.org/10.4028/www.scientific.net/amr.502.416.

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Spin injection efficiency in the ferromagnet/ organic semiconductors system (FM/OSEs) was explored considering the spin dependence of the electric-conductivity induced by spin injection in the OSEs. It is known that the OSEs is spin polarized, once spin was injected from FM layer to OSEs layer. The up-spin polarons and the down-spin polarons have different density. The spin dependence of the electric-conductivity is so induced. In the literature, it was usually supposed that the electric-conductivity in the spin polarized OSEs is spin independent. So, it is crucial to reflect the physics in the spin injection. Our work shows that the spin-dependent electrical-conductivity is one of the significant factors which affect the spin injection efficiency. The spin injection efficiency increases obviously with the rising of the spin-dependent electrical-conductivity in the same spin injection system. And the effect becomes larger, when the polaron proportion increases. Furthermore, the effects of interfacial electrochemical-potential proportion on the spin injection efficiency in the heterojunction are also included.

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3

Schmidt, G., and L. W. Molenkamp. "Electrical spin injection into semiconductors." Physica E: Low-dimensional Systems and Nanostructures 9, no. 1 (2001): 202–8. http://dx.doi.org/10.1016/s1386-9477(00)00195-8.

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4

Liu, B. L., M. Sénès, S. Couderc, et al. "Optical and electrical spin injection in spin-LED." Physica E: Low-dimensional Systems and Nanostructures 17 (April 2003): 358–60. http://dx.doi.org/10.1016/s1386-9477(02)00809-3.

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5

Hövel, S., N. C. Gerhardt, M. R. Hofmann, et al. "Room temperature electrical spin injection in remanence." Applied Physics Letters 93, no. 2 (2008): 021117. http://dx.doi.org/10.1063/1.2957469.

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6

Schmidt, Georg, and Laurens W. Molenkamp. "Electrical spin injection using dilute magnetic semiconductors." Physica E: Low-dimensional Systems and Nanostructures 10, no. 1-3 (2001): 484–88. http://dx.doi.org/10.1016/s1386-9477(01)00142-4.

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7

Fitzgerald, Richard. "Magnetic Semiconductors Enable Efficient Electrical Spin Injection." Physics Today 53, no. 4 (2000): 21–22. http://dx.doi.org/10.1063/1.883032.

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8

Heedt, S., C. Morgan, K. Weis, et al. "Electrical Spin Injection into InN Semiconductor Nanowires." Nano Letters 12, no. 9 (2012): 4437–43. http://dx.doi.org/10.1021/nl301052g.

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9

Löffler, W., D. Tröndle, J. Fallert, et al. "Electrical spin injection into InGaAs quantum dots." physica status solidi (c) 3, no. 7 (2006): 2406–9. http://dx.doi.org/10.1002/pssc.200668004.

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10

Bibes, M., N. Reyren, E. Lesne, et al. "Towards electrical spin injection into LaAlO 3 –SrTiO 3." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 370, no. 1977 (2012): 4958–71. http://dx.doi.org/10.1098/rsta.2012.0201.

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Future spintronics devices will be built from elemental blocks allowing the electrical injection, propagation, manipulation and detection of spin-based information. Owing to their remarkable multi-functional and strongly correlated character, oxide materials already provide such building blocks for charge-based devices such as ferroelectric field-effect transistors (FETs), as well as for spin-based two-terminal devices such as magnetic tunnel junctions, with giant responses in both cases. Until now, the lack of suitable channel materials and the uncertainty of spin-injection conditions in these compounds had however prevented the exploration of similar giant responses in oxide-based lateral spin transport structures. In this paper, we discuss the potential of oxide-based spin FETs and report magnetotransport data that suggest electrical spin injection into the LaAlO 3 –SrTiO 3 interface system. In a local, three-terminal measurement scheme, we analyse the voltage variation associated with the precession of the injected spin accumulation driven by perpendicular or longitudinal magnetic fields (Hanle and ‘inverted’ Hanle effects). The spin accumulation signal appears to be much larger than expected, probably owing to amplification effects by resonant tunnelling through localized states in the LaAlO 3 . We give perspectives on how to achieve direct spin injection with increased detection efficiency, as well on the implementation of efficient top gating schemes for spin manipulation.

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