Journal articles on the topic 'Electrical measurements C-V and G-V'
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Özden, Şadan, Ömer Güllü, and Osman Pakma. "Room temperature I–V and C–V characteristics of Au/mTPP/p-Si organic MIS devices." European Physical Journal Applied Physics 82, no. 2 (May 2018): 20101. http://dx.doi.org/10.1051/epjap/2018180004.
Full textPadma, R., and V. Rajagopal Reddy. "Electrical properties and the determination of interface state density from I-V, C-f and G-f measurements in Ir/Ru/n-InGaN Schottky barrier diode." Физика и техника полупроводников 51, no. 12 (2017): 1698. http://dx.doi.org/10.21883/ftp.2017.12.45189.8340.
Full textFaraz, Sadia Muniza, Wakeel Shah, Naveed Ul Hassan Alvi, Omer Nur, and Qamar Ul Wahab. "Electrical Characterization of Si/ZnO Nanorod PN Heterojunction Diode." Advances in Condensed Matter Physics 2020 (April 13, 2020): 1–9. http://dx.doi.org/10.1155/2020/6410573.
Full textPadovani, Andrea, Ben Kaczer, Milan Pesic, Attilio Belmonte, Mihaela Popovici, Laura Nyns, Dimitri Linten, et al. "A Sensitivity Map-Based Approach to Profile Defects in MIM Capacitors From ${I}$ – ${V}$ , ${C}$ – ${V}$ , and ${G}$ – ${V}$ Measurements." IEEE Transactions on Electron Devices 66, no. 4 (April 2019): 1892–98. http://dx.doi.org/10.1109/ted.2019.2900030.
Full textPananakakis, G., and G. Kamarinos. "Complete determination of the electrical interfacial parameters in Al-SiO2 (30 Å)-Si tunnel diodes using I–V, C–V, G–V measurements." Surface Science Letters 168, no. 1-3 (March 1986): A137. http://dx.doi.org/10.1016/0167-2584(86)90487-1.
Full textPananakakis, G., and G. Kamarinos. "Complete determination of the electrical interfacial parameters in Al-SiO2 (30 Å)-Si tunnel diodes using I–V, C–V, G–V measurements." Surface Science 168, no. 1-3 (March 1986): 657–64. http://dx.doi.org/10.1016/0039-6028(86)90897-6.
Full textAltındal, Şemsettin, Ali Barkhordari, Gholamreza Pirgholi-Givi, Murat Ulusoy, Hamidreza Mashayekhi, Süleyman Özçelik, and Yashar Azizian-Kalandaragh. "Comparison of the electrical and impedance properties of Au/(ZnOMn:PVP)/n-Si (MPS) type Schottky-diodes (SDs) before and after gamma-irradiation." Physica Scripta 96, no. 12 (December 1, 2021): 125881. http://dx.doi.org/10.1088/1402-4896/ac43d7.
Full textKoliakoudakis, C., J. Dontas, S. Karakalos, M. Kayambaki, S. Ladas, G. Konstantinidis, S. Kennou, and Konstantinos Zekentes. "Fabrication and Characterization of Cr-Based Schottky Diode on n-Type 4H-SiC." Materials Science Forum 615-617 (March 2009): 651–54. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.651.
Full textAfandiyeva, İ. M., İ. Dökme, Ş. Altındal, L. K. Abdullayeva, and Sh G. Askerov. "The frequency and voltage dependent electrical characteristics of Al–TiW–Pd2Si/n-Si structure using I–V, C–V and G/ω–V measurements." Microelectronic Engineering 85, no. 2 (February 2008): 365–70. http://dx.doi.org/10.1016/j.mee.2007.07.010.
Full textGiannazzo, Filippo, Stefan Hertel, Andreas Albert, Antonino La Magna, Fabrizio Roccaforte, Michael Krieger, and Heiko B. Weber. "Electrical Nanocharacterization of Epitaxial Graphene/Silicon Carbide Schottky Contacts." Materials Science Forum 778-780 (February 2014): 1142–45. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.1142.
Full textDAŞ, Elif. "Some Electrical and Photoelectrical Properties of Conducting Polymer Graphene Composite /n-Silicon Heterojunction Diode." Sakarya University Journal of Science 26, no. 5 (October 20, 2022): 1000–1009. http://dx.doi.org/10.16984/saufenbilder.1129742.
Full textKaya, A., Ö. Sevgili, and Ş. Altındal. "Energy density distribution profiles of surface states, relaxation time and capture cross-section in Au/n-type 4H-SiC SBDs by using admittance spectroscopy method." International Journal of Modern Physics B 28, no. 17 (May 29, 2014): 1450104. http://dx.doi.org/10.1142/s0217979214501045.
Full textMazurak, Andrzej, Jakub Jasin´ski, and Bogdan Majkusiak. "Determination of border/bulk traps parameters based on (C-G-V) admittance measurements." Journal of Vacuum Science & Technology B 37, no. 3 (May 2019): 032904. http://dx.doi.org/10.1116/1.5060674.
Full textGüler, G., Ö. Güllü, S. Karataş, and Ö. F. Bakkaloǧlu. "Electrical Characteristics of Co/n-Si Schottky Barrier Diodes Using I – V and C – V Measurements." Chinese Physics Letters 26, no. 6 (June 2009): 067301. http://dx.doi.org/10.1088/0256-307x/26/6/067301.
Full textDemirbilek, Nihat, Fahrettin Yakuphanoğlu, and Mehmet Kaya. "Structural and optical properties of pure ZnO and Al/Cu co-doped ZnO semiconductor thin films and electrical characterization of photodiodes." Materials Testing 63, no. 3 (March 1, 2021): 279–85. http://dx.doi.org/10.1515/mt-2020-0042.
Full textÖzdemir, Orhan, Beyhan Tatar, Deneb Yılmazer, Pınar Gökdemir, and Kubilay Kutlu. "Correlation of DC and AC electrical properties of Al/p-Si structure by I–V–T and C(G/ω)–V–T measurements." Materials Science in Semiconductor Processing 12, no. 4-5 (August 2009): 133–41. http://dx.doi.org/10.1016/j.mssp.2009.09.005.
Full textÇetinkaya, H. G., D. E. Yıldız, and Ş. Altındal. "On the negative capacitance behavior in the forward bias of Au/n–4H–SiC (MS) and comparison between MS and Au/TiO2/n–4H–SiC (MIS) type diodes both in dark and under 200 W illumination intensity." International Journal of Modern Physics B 29, no. 01 (December 18, 2014): 1450237. http://dx.doi.org/10.1142/s0217979214502373.
Full textThi, Tran Anh Tuan, Dong-Hau Kuo, Phuong Thao Cao, Pham Quoc-Phong, Vinh Khanh Nghi, and Nguyen Phuong Lan Tran. "Electrical and Structural Properties of All-Sputtered Al/SiO2/p-GaN MOS Schottky Diode." Coatings 9, no. 10 (October 21, 2019): 685. http://dx.doi.org/10.3390/coatings9100685.
Full textKhelfaoui, Fatima, Itidel Belaidi, Nadhir Attaf, Mohammed Salah Aida, and Jamal Bougdira. "Realization and Characterization of CH3NH3PbI3 /c-Si Heterojunction." Defect and Diffusion Forum 406 (January 2021): 364–74. http://dx.doi.org/10.4028/www.scientific.net/ddf.406.364.
Full textKhelfaoui, Fatima, Itidel Belaidi, Nadhir Attaf, Mohammed Salah Aida, and Jamal Bougdira. "Realization and Characterization of CH3NH3PbI3 /c-Si Heterojunction." Defect and Diffusion Forum 406 (January 2021): 364–74. http://dx.doi.org/10.4028/www.scientific.net/ddf.406.364.
Full textAlexandrova, S., and A. Szekeres. "Thickness-Dependent Interface Parameters of Silicon Oxide Films Grown on Plasma Hydrogenated Silicon." Solid State Phenomena 159 (January 2010): 163–66. http://dx.doi.org/10.4028/www.scientific.net/ssp.159.163.
Full textCañas, J., C. Dussarrat, T. Teramoto, C. Masante, M. Gutierrez, and E. Gheeraert. "High quality SiO2/diamond interface in O-terminated p-type diamond MOS capacitors." Applied Physics Letters 121, no. 7 (August 15, 2022): 072101. http://dx.doi.org/10.1063/5.0103037.
Full textHIROSE, Fumihiko, Yasuo KIMURA, and Michio NIWANO. "P3HT/Al Organic/Inorganic Heterojunction Diodes Investigated by I-V and C-V Measurements." IEICE Transactions on Electronics E92-C, no. 12 (2009): 1475–78. http://dx.doi.org/10.1587/transele.e92.c.1475.
Full textRyu, K., I. Kymissis, V. Bulovic, and C. G. Sodini. "Direct extraction of mobility in pentacene OFETs using C-V and I-V measurements." IEEE Electron Device Letters 26, no. 10 (October 2005): 716–18. http://dx.doi.org/10.1109/led.2005.854394.
Full textKabra, Vinay, Lubna Aamir, and M. M. Malik. "Low cost, p-ZnO/n-Si, rectifying, nano heterojunction diode: Fabrication and electrical characterization." Beilstein Journal of Nanotechnology 5 (November 24, 2014): 2216–21. http://dx.doi.org/10.3762/bjnano.5.230.
Full textNakano, Yoshitaka, Liwen Sang, and Masatomo Sumiya. "Electrical Characterization of Thick InGaN Films for Photovoltaic Applications." MRS Proceedings 1635 (2014): 29–34. http://dx.doi.org/10.1557/opl.2014.205.
Full textDe Cogan, D., and A. Alani. "Double-resonance technique for C/V measurements of semiconductor devices." Electronics Letters 21, no. 24 (1985): 1153. http://dx.doi.org/10.1049/el:19850816.
Full textBahari, Ali, Masoud Ebrahimzadeh, and Reza Gholipur. "Structural and electrical properties of zirconium doped yttrium oxide nanostructures." International Journal of Modern Physics B 28, no. 16 (May 13, 2014): 1450102. http://dx.doi.org/10.1142/s0217979214501021.
Full textBelkouch, S., L. Paquin, A. Deneuville, and E. Gheeraert. "Caractérisation physicochimique et électronique de la structure Pt–a-Si: H–c-Si(n)." Canadian Journal of Physics 69, no. 3-4 (March 1, 1991): 357–60. http://dx.doi.org/10.1139/p91-060.
Full textBita, Bogdan, Sorin Vizireanu, Daniel Stoica, Valentin Ion, Sasa Yehia, Adrian Radu, Sorina Iftimie, and Gheorghe Dinescu. "On the Structural, Morphological, and Electrical Properties of Carbon Nanowalls Obtained by Plasma-Enhanced Chemical Vapor Deposition." Journal of Nanomaterials 2020 (October 1, 2020): 1–6. http://dx.doi.org/10.1155/2020/8814459.
Full textAlisha, P. Chander, V. K. Malik, and R. Chandra. "Structural and Electrical Transport Properties of Sputter-Deposited SiC Thin Films." Journal of Physics: Conference Series 2518, no. 1 (June 1, 2023): 012016. http://dx.doi.org/10.1088/1742-6596/2518/1/012016.
Full textTokusu, Toji, Hirokazu Miyabayashi, Yuji Hiruma, Hajime Nagata, and Tadashi Takenaka. "Electrical Properties and Piezoelectric Properties of CaBi2Ta2O9-Based Ceramics." Key Engineering Materials 421-422 (December 2009): 46–49. http://dx.doi.org/10.4028/www.scientific.net/kem.421-422.46.
Full textZhang, Shiyu, Zeng Liu, Yuanyuan Liu, Yusong Zhi, Peigang Li, Zhenping Wu, and Weihua Tang. "Electrical Characterizations of Planar Ga2O3 Schottky Barrier Diodes." Micromachines 12, no. 3 (March 3, 2021): 259. http://dx.doi.org/10.3390/mi12030259.
Full textALI, A. N. M., and E. M. NASIR. "CHARACTERIZATION OF (ZnO)1-X-(CuO)x/GaAs HETEROJUNCTION SOLAR CELL GROWN BY PULSED LASER DEPOSITION." Digest Journal of Nanomaterials and Biostructures 16, no. 1 (January 2021): 169–74. http://dx.doi.org/10.15251/djnb.2021.161.169.
Full textKumar, Neeraj, and Rabinder Nath. "Ferroelectric and Electrical Properties of Potassium Nitrate Thin Composite Layers." Advanced Materials Research 403-408 (November 2011): 607–17. http://dx.doi.org/10.4028/www.scientific.net/amr.403-408.607.
Full textSelçuk, A. H., E. Orhan, S. Bilge Ocak, A. B. Selçuk, and U. Gökmen. "Investigation of dielectric properties of heterostructures based on ZnO structures." Materials Science-Poland 35, no. 4 (March 20, 2018): 885–92. http://dx.doi.org/10.1515/msp-2017-0108.
Full textKarataş, Ş., Ş. Altındal, A. Türüt, and M. Çakar. "Electrical transport characteristics of Sn/p-Si schottky contacts revealed from I–V–T and C–V–T measurements." Physica B: Condensed Matter 392, no. 1-2 (April 2007): 43–50. http://dx.doi.org/10.1016/j.physb.2006.10.039.
Full textThompson, J. R., J. J. Dubowski, and D. J. Northcott. "Electrical characterization of CdTe–InSb heterojunctions." Canadian Journal of Physics 69, no. 3-4 (March 1, 1991): 274–77. http://dx.doi.org/10.1139/p91-046.
Full textPorter, L. M., R. F. Davis, J. S. Bow, M. J. Kim, R. W. Carpenter, and R. C. Glass. "Chemistry, microstructure, and electrical properties at interfaces between thin films of titanium and alpha (6H) silicon carbide (0001)." Journal of Materials Research 10, no. 3 (March 1995): 668–79. http://dx.doi.org/10.1557/jmr.1995.0668.
Full textStark, Roger, Alexander Tsibizov, Salvatore Race, Thomas Ziemann, Ivana Kovacevic-Badstubner, and Ulrike Grossner. "Temperature Dependence of the Channel and Drift Resistance of SiC Power MOSFETs Extracted from I-V and C-V Measurements." Materials Science Forum 1092 (June 6, 2023): 165–70. http://dx.doi.org/10.4028/p-06b54k.
Full textKim, Minyeong, Nolan Hendricks, Neil Moser, Pragya Shrestha, Sujitra Pookpanratana, Sang-Mo Koo, and Qiliang Li. "Electrical Properties of Ga2O3 Schottky Barrier Diodes with and without Mesa Structure." ECS Meeting Abstracts MA2023-01, no. 32 (August 28, 2023): 1840. http://dx.doi.org/10.1149/ma2023-01321840mtgabs.
Full textPellegrino, Domenico, Lucia Calcagno, Massimo Zimbone, Salvatore Di Franco, and Antonella Sciuto. "Correlation between Defects and Electrical Performances of Ion-Irradiated 4H-SiC p–n Junctions." Materials 14, no. 8 (April 14, 2021): 1966. http://dx.doi.org/10.3390/ma14081966.
Full textUmar, Marjoni Imamora Ali. "Graphene-Au Film Synthesized from GrO in Au-Aquaeus Solution as Counter Electrode For DSSC Application." Lensa: Jurnal Kependidikan Fisika 7, no. 2 (December 31, 2019): 24. http://dx.doi.org/10.33394/j-lkf.v7i2.2644.
Full textJungwirth, Felix, Daniel Knez, Fabrizio Porrati, Alfons G. Schuck, Michael Huth, Harald Plank, and Sven Barth. "Vanadium and Manganese Carbonyls as Precursors in Electron-Induced and Thermal Deposition Processes." Nanomaterials 12, no. 7 (March 28, 2022): 1110. http://dx.doi.org/10.3390/nano12071110.
Full textFaraz, Sadia Muniza, Muhammed Naveed Alvi, Anne Henry, Omer Nour, Magnus Willander, and Qamar Ul Wahab. "Annealing Effects on Electrical and Optical Properties of N-ZnO/P-Si Heterojunction Diodes." Advanced Materials Research 324 (August 2011): 233–36. http://dx.doi.org/10.4028/www.scientific.net/amr.324.233.
Full textLEE, SEUNGJAE, and KIJUNG YONG. "SELF-LIMITING GROWTH OF TITANIUM SILICATE AND EFFECTS OF THERMAL ANNEALING ON THE ELECTRICAL PROPERTIES OF TITANIUM SILICATE/SiO2." Surface Review and Letters 14, no. 05 (October 2007): 921–25. http://dx.doi.org/10.1142/s0218625x07010433.
Full textDevi, V. Lakshmi, I. Jyothi, and V. Rajagopal Reddy. "Analysis of temperature-dependent Schottky barrier parameters of Cu–Au Schottky contacts to n-InP." Canadian Journal of Physics 90, no. 1 (January 2012): 73–81. http://dx.doi.org/10.1139/p11-142.
Full textIdris, Muhammad I., Nick G. Wright, and Alton B. Horsfall. "Effect of Post Oxide Annealing on the Electrical and Interface 4H-SiC/Al2O3 MOS Capacitors." Materials Science Forum 924 (June 2018): 486–89. http://dx.doi.org/10.4028/www.scientific.net/msf.924.486.
Full textYücedağ, İ., A. Kaya, and Ş. Altındal. "On the frequency dependent negative dielectric constant behavior in Al/Co-doped (PVC+TCNQ)/p-Si structures." International Journal of Modern Physics B 28, no. 23 (July 13, 2014): 1450153. http://dx.doi.org/10.1142/s0217979214501537.
Full textHong, J. H., and Jae Min Myoung. "Characteristics of HfO2 Dielectric Layer Grown by MOMBE." Materials Science Forum 449-452 (March 2004): 1005–8. http://dx.doi.org/10.4028/www.scientific.net/msf.449-452.1005.
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