Academic literature on the topic 'Electrical dopant activation'
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Journal articles on the topic "Electrical dopant activation"
Kennedy, Noel, Ray Duffy, Luke Eaton, Dan O’Connell, Scott Monaghan, Shane Garvey, James Connolly, Chris Hatem, Justin D. Holmes, and Brenda Long. "Phosphorus monolayer doping (MLD) of silicon on insulator (SOI) substrates." Beilstein Journal of Nanotechnology 9 (August 6, 2018): 2106–13. http://dx.doi.org/10.3762/bjnano.9.199.
Full textWang, Xiqiao, Joseph A. Hagmann, Pradeep Namboodiri, Jonathan Wyrick, Kai Li, Roy E. Murray, Alline Myers, et al. "Quantifying atom-scale dopant movement and electrical activation in Si:P monolayers." Nanoscale 10, no. 9 (2018): 4488–99. http://dx.doi.org/10.1039/c7nr07777g.
Full textChung, Suk, Shane R. Johnson, Ding Ding, Yong-Hang Zhang, David J. Smith, and Martha R. McCartney. "Quantitative Analysis of Dopant Distribution and Activation Across p-n Junctions in AlGaAs/GaAs Light-Emitting Diodes Using Off-Axis Electron Holography." IEEE Transactions on Electron Devices 56, no. 10 (September 2009): 1919–23. http://dx.doi.org/10.1109/ted.2009.2025914.
Full textWeber, W. J., C. W. Griffin, and J. L. Bates. "Electrical and thermal transport properties of the Y1 − x Mx CrO3 system." Journal of Materials Research 1, no. 5 (October 1986): 675–84. http://dx.doi.org/10.1557/jmr.1986.0675.
Full textRanchoux, B., and J. F. Currie. "Étude des corrélations entre paramètres de préparation, caractéristiques électriques et physico-chimiques d'échantillons de a-Si : H dopés ou non." Canadian Journal of Physics 63, no. 1 (January 1, 1985): 54–58. http://dx.doi.org/10.1139/p85-009.
Full textBrandt, Matthias, Holger von Wenckstern, Christoph Meinecke, Tilman Butz, Holger Hochmuth, Michael Lorenz, and Marius Grundmann. "Dopant activation in homoepitaxial MgZnO:P thin films." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 27, no. 3 (2009): 1604. http://dx.doi.org/10.1116/1.3086657.
Full textCifuentes, N., E. R. Viana, H. Limborço, D. B. Roa, A. Abelenda, M. I. N. da Silva, M. V. B. Moreira, G. M. Ribeiro, A. G. de Oliveira, and J. C. González. "Electrical Properties of Polytypic Mg Doped GaAs Nanowires." Journal of Nanomaterials 2016 (2016): 1–5. http://dx.doi.org/10.1155/2016/9451319.
Full textSierakowski, Kacper, Rafal Jakiela, Boleslaw Lucznik, Pawel Kwiatkowski, Malgorzata Iwinska, Marcin Turek, Hideki Sakurai, Tetsu Kachi, and Michal Bockowski. "High Pressure Processing of Ion Implanted GaN." Electronics 9, no. 9 (August 26, 2020): 1380. http://dx.doi.org/10.3390/electronics9091380.
Full textSong, Xi, Anne Elisabeth Bazin, Jean François Michaud, Frédéric Cayrel, Marcin Zielinski, Marc Portail, Thierry Chassagne, Emmanuel Collard, and Daniel Alquier. "Electrical Characterization of Nitrogen Implanted 3C-SiC by SSRM and CTLM Measurements." Materials Science Forum 679-680 (March 2011): 193–96. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.193.
Full textRahim, Madatov, Najafov Arzu, Alakbarov Aydin, Tagiev Teymur, and Khaliqzadeh Aydan. "Features of Electrical and Photoelectric Properties of GaS(Yb) Monocrystals." Zeitschrift für Naturforschung A 74, no. 9 (September 25, 2019): 821–25. http://dx.doi.org/10.1515/zna-2018-0475.
Full textDissertations / Theses on the topic "Electrical dopant activation"
Cornelius, Steffen. "Charge transport limits and electrical dopant activation in transparent conductive (Al,Ga):ZnO and Nb:TiO2 thin films prepared by reactive magnetron sputtering." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2014. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-156145.
Full textCornelius, Steffen [Verfasser], Wolfhard [Akademischer Betreuer] Möller, and Frank [Akademischer Betreuer] Richter. "Charge transport limits and electrical dopant activation in transparent conductive (Al,Ga):ZnO and Nb:TiO2 thin films prepared by reactive magnetron sputtering / Steffen Cornelius. Gutachter: Wolfhard Möller ; Frank Richter. Betreuer: Wolfhard Möller." Dresden : Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2014. http://d-nb.info/106904072X/34.
Full textSong, Xi. "Activation des dopants implantés dans le carbure de silicium (3C-SiC et 4H-SiC)." Thesis, Tours, 2012. http://www.theses.fr/2012TOUR4019/document.
Full textThis work was dedicated to the activation of implanted dopants in 3C-SiC and 4H-SiC. The goal is to propose optimized process conditions for n-type implantation in 3C-SiC and for p-type in 4H-SiC.We have first studied the n-type implantation in 3C-SiC. To do so, N, P implantations, N&P co-implantation and the associated annealings were performed. The nitrogen implanted sample, annealed at 1400°C-30 min evidences a dopant activation rate close to 100% while maintaining a good crystal quality. Furthermore, the electrical properties of extended defects in 3C-SiC have been studied. Using the SSRM measurements, we have evidenced for the first time that these defects have a very high electrical activity and as a consequence on future devices.Then, we have realized a study on p-type doping by Al implantation in 4H-SiC with different implantation and annealing temperatures. Al implantation at 200°C followed by an annealing at 1850°C-30min lead to the best results in terms of physical and electrical properties
Ruess, Frank Joachim Physics Faculty of Science UNSW. "Atomically controlled device fabrication using STM." Awarded by:University of New South Wales. Physics, 2006. http://handle.unsw.edu.au/1959.4/24855.
Full textMambou, Josiane. "Dopage au bore à partir de la phase vapeur : étude comparative des couches minces polycristallines et monocristallines de diamant." Université Joseph Fourier (Grenoble), 1997. http://www.theses.fr/1997GRE10055.
Full textChen, Hsin-Cheng, and 陳信誠. "Study on the influences of co-doping and initial layers on dopant activation and opto-electrical properties." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/92360621859382094080.
Full text南台科技大學
機械工程系
98
The purpose of this study is to investigate the influences of doping Al (Al/Zn=0.~5 at.%) and co-doping Al and Mg (Al/Zn=0.25~1.0 at.%、Mg/Zn=0.0 ~1.0 at.%) by using sol-gel method at the different growth behaviors (Rapid Thermal Annealing,tube furnace and radio frequency sputtering system) on the precursor compounds, micro-structural, surface morphology and optoelectronic properties of ZnO thin films and to find the best proportion of doping so that high quality of transparent conductive films can be obtained. In this experiment, the precursor was prepared by sol-gel method. We used two processes. First, Zinc acetate dehydrate was added into alcohol solvent. Then, MEA was added as stabilizer. Afterwards, adequate amount of metallic ions . Next, spin-coating was carried out on a glass substrate (corning eagle 2000). After different heat-treatments, the films were obtained. Second, process using RF sputtering with sol-gel method, rapid thermal annealing in the way of the films grain growth will not be subject to the direction of the initial layers.We used the sputtering process to create an initial layer on the glass substrate of the thicknesses of the initial layers were tens to hundreds of nanometers have also promoted the growth of the ZnO crystallites in the (002) direction. The specimens were optoelectronic properties analyzed by UV-Vis-NIR, SE, Hall and Four-Point Probe, and TF-XRD, FE-SEM patterns demonstrated that the preferential orientation of the films, XPS which are mainly used to analyze the influences on the dopant activation, and FTIR of activation compounds in Mg-doped ZnO films. Experimental results show that the lowest resistance of 2.66×10-3Ωcm was obtained with 0.75 at.% Al and 0.5 at.% Mg. The transmittance of the ZnO:(Al, Mg) films was over 80%. Because RTA process that the growth of the films began inside the sol-layer. However, TF process that the of the films began inside the substrate heated to different films growth characteristics than the favorable effect of dopant activation. Second, RF sputtering with sol-gel method of the resistivity was not improved. The application of a high quality initial layer could enhance the crystallographic quality of the ZnO films.
Wang, Yu-Long, and 王裕隆. "Improving electrical characteristics of Fin-shaped Tunneling-Field-Effect-Transistor using Microwave dopant activation and Asymmetry structure." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/45990305348300769134.
Full text國立清華大學
工程與系統科學系
101
The market demand for portable electric equipment increase dramatically year by year. Although transistors develop toward low cost and high density, maintaining device characteristics becomes difficult due to the device fabrication and physics limitations of the device. Designing a device that different from conventional MOSFET is a necessary way. This thesis based on Fin-shaped Tunneling Transistor which operated by quantum tunneling mechanism. Thus, compared with conventional MOSFET operated by drift mechanism, the Tunneling Transistor can achieve fast on/off characteristic. By the Fin-shaped structure, it can affect the active layer electric potential distribution by multi-direction, increasing the gate control ability and enhance the characteristics. Above the discussion, the Fin-shaped tunneling transistor is a device with high-efficiency and good transfer characteristic. In this thesis, we focus on demonstrate that microwave dopant activation technique can help TFETs to form an abrupt tunneling junction. Subthreshold slope and driving current can be greatly enhanced by microwave annealing as the dopant activation method compare to traditional rapid thermal annealing. An interesting phenomenon of negative differential conductance in the output characteristic was observed, which is attributed to hot-carrier effect at the high gate overdrive operation. A positive temperature dependence of transfer characteristic is also observed, which is related to the bandgap narrowing effect and the enhancement of the thermionic field emissions of the grain boundary states. Finally, with the geometric difference between source and drain, we demonstrate a device with high on-state current and low off-state current, simultaneously. This work shows experimental data for device’s reliability; all the data can display Fin-shaped tunneling transistor has applied to high value actually, it would become the next-generation device.
Cornelius, Steffen. "Charge transport limits and electrical dopant activation in transparent conductive (Al,Ga):ZnO and Nb:TiO2 thin films prepared by reactive magnetron sputtering: Charge transport limits and electrical dopant activation in transparent conductive (Al,Ga):ZnO and Nb:TiO2 thin films prepared by reactive magnetron sputtering." Doctoral thesis, 2013. https://tud.qucosa.de/id/qucosa%3A28409.
Full textMtangi, Wilbert. "Electrical characterization of process, annealing and irradiation induced defects in ZnO." Thesis, 2012. http://hdl.handle.net/2263/30356.
Full textThesis (PhD)--University of Pretoria, 2013.
Physics
unrestricted
Zong, Shuang. "Preparation of N-doped porous carbon materials and their supercapacitator performance." Diss., 2021. http://hdl.handle.net/10500/27435.
Full textCollege of Engineering, Science and Technology
M. Tech.( Civil and Chemical Engineering
Book chapters on the topic "Electrical dopant activation"
Johnson, C. M., P. Kringhøj, and M. C. Ridgway. "The influence of non-stoichiometry on dopant electrical activation and depth distribution in InP implanted with Group IV or VI elements." In Ion Beam Modification of Materials, 895–98. Elsevier, 1996. http://dx.doi.org/10.1016/b978-0-444-82334-2.50176-3.
Full textSridhar, Rapolu, D. Ravinder, J. Laxman Naik, K. Vijaya Kumar, N. Maramu, and S. Katlakunta. "Investigation of Structural, Magnetic and Electrical Properties of Chromium Substituted Nickel Ceramic Nanopowders." In Advanced Ceramic Materials. IntechOpen, 2021. http://dx.doi.org/10.5772/intechopen.94941.
Full textConference papers on the topic "Electrical dopant activation"
Ivanov, Denis, Ilya Marinov, Yuriy Gorbachev, Alexander Smirnov, and Valeria Krzhizhanovskaya. "Computer Simulation of Laser Annealing of a Nanostructured Surface." In ASME 2009 International Design Engineering Technical Conferences and Computers and Information in Engineering Conference. ASMEDC, 2009. http://dx.doi.org/10.1115/detc2009-87087.
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