Relevant bibliographies by topics / Electrical device-LED

Academic literature on the topic 'Electrical device-LED'

Author: Grafiati
Published: 6 September 2023

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Journal articles on the topic "Electrical device-LED"

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Dal Lago, M., M. Meneghini, N. Trivellin, G. Mura, M. Vanzi, G. Meneghesso, and E. Zanoni. "“Hot-plugging” of LED modules: Electrical characterization and device degradation." Microelectronics Reliability 53, no. 9-11 (September 2013): 1524–28. http://dx.doi.org/10.1016/j.microrel.2013.07.054.

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Liu, H. C., E. Dupont, M. Byloos, M. Buchanan, C. Y. Song, and Z. R. Wasilewski. "QWIP-LED PIXELLESS THERMAL IMAGING DEVICE." International Journal of High Speed Electronics and Systems 12, no. 03 (September 2002): 891–905. http://dx.doi.org/10.1142/s0129156402001733.

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Over the past several years, we have been developing an alternative approach to thermal imaging based on pixelless quantum well infrared photodetectors (QWIP) integrated with light emitting diodes (LED). This paper reviews the basic concept, presents our latest results, and discusses issues related to the imaging performance. Analytical expressions are derived for evaluating noise equivalent temperature difference. Areas that need improvements are pointed out.
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Zhao, Zhan Feng, and Juan Ye. "Design Key Points for High Power LED Encapsulation." Advanced Materials Research 651 (January 2013): 706–9. http://dx.doi.org/10.4028/www.scientific.net/amr.651.706.

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LED performance was significantly improved because of the improvement of encapsulation design and materials properties. The design key points were reviewed in point view of optical, electrical, thermal, and reliability consideration. It was concluded that the packaging design should be simultaneously implemented with the chip design, integrally considering the optics, electrics, thermal, and reliability together. The interfacial thermal resistance and stress from packaging also play critical roles for the optical efficiency and reliability of packaged LED device.
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Arakawa, Takumi, and Kazuya Tada. "Improvement of Simple Spectral Sensitivity Measurement Device Using LED." IEEJ Transactions on Electronics, Information and Systems 139, no. 12 (December 1, 2019): 1527–28. http://dx.doi.org/10.1541/ieejeiss.139.1527.

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PRALGAUSKAITĖ, SANDRA, VILIUS PALENSKIS, JONAS MATUKAS, JUOZAS PETRULIS, and GENADIJUS KURILČIK. "NOISE CHARACTERISTICS AND RELIABILITY OF LIGHT EMITTING DIODES BASED ON NITRIDES." Fluctuation and Noise Letters 07, no. 03 (September 2007): L367—L378. http://dx.doi.org/10.1142/s0219477507004008.

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Optical and electrical noises and correlation factor between optical and electrical fluctuations of nitride-based light emitting diodes (LEDs) have been investigated under forward bias. Their electrical, optical and noise characteristics were compared with ones of LEDs of other materials. LED noise characteristic changes during aging have been measured, too. It is found that optical and electrical noise spectra under forward bias for more reliable LEDs distinguish by lower l/f type fluctuations and Lorentzian type noise at higher frequencies. LEDs with intensive 1/f noise demonstrate shorter lifetime. It is shown that reason of LED degradation is related with defects presence in device structure. These defects can be formed during device fabrication or appear during operation. An analysis of LED current-voltage and electrical noise characteristics under forward and reverse bias has shown that LEDs with intensive 1/f electrical noise, large reverse current (low reverse breakdown voltage) and larger terminal voltage under forward bias distinguish by short lifetime.
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Mamaev, Daniil S., and Artem A. Sharapov. "DEVELOPMENT OF A SMART LED LIGHT LAMP." Interexpo GEO-Siberia 7, no. 1 (July 8, 2020): 181–86. http://dx.doi.org/10.33764/2618-981x-2020-7-1-181-186.

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The article presents the process of developing a smart LED lamp. This device acts as a weather station, a security system and an ergonomic small lamp. The smart LED lamp can be used by ordinary citizens, gardeners or companies. By connecting the lamp to the Internet, it is possible to view information about the environment and the status of the security system from anywhere in the world. The electrical circuit of the device, a simulated 3D model of the case, assembled prototype, mobile application are given. The basic details necessary for the functioning of this device are determined. The result of the operation of the device is shown.
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Chen, Hsiang, Kun Min Hsieh, Yun Yang He, Li Chen Chu, Ming Ling Lee, and Kow Ming Chang. "Degradation of InGaN/GaN LEDs under Forward-bias Operations in Salty Water Vapor." Journal of New Materials for Electrochemical Systems 19, no. 1 (February 15, 2016): 007–10. http://dx.doi.org/10.14447/jnmes.v19i1.340.

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Forward-bias stress in salty water vapor can quickly degrade the InGaN/GaN LEDs. To examine the weakness of the device, electrical, optical, and material analyses and characterizations were performed to investigate the failure mechanism. Corrosion of the electrode and Au atom diffusion might result in damages of the device. Results indicate that forward-bias stress in salty water vapor can quickly influence the material properties, optical behaviors, and electrical characteristics of the LED device.
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SMOLIANINOV, V., and A. SUKHOPARA. "Improving the operation of the linear electromagnetic step device." Journal of Electrical and power engineering 23, no. 2 (December 23, 2020): 38–43. http://dx.doi.org/10.31474/2074-2630-2020-2-38-43.

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The improved operation of the linear electromagnetic device (LED) is proposed, without the use of additional sensors for control motion of mobile link LED and automation of technological process. Research focused on determination of the relationship of changes in active inductive parameters of the LED with its design parameters when moving the mobile link of LED and construction an improving the operation, that controls these changes for the increasing the efficiency of their functioning. For this research a theories of electrical circuits and electronic circuits were implemented, which takes into account the change in electrical parameters when moving the mobile link of the linear electromagnetic device. It is proved the dependence of the magnetic resistance in certain sections of the magnetic circuit from the position the mobile link and the design parameters of the LED, the intervals of the magnetic resistance change when the mobile link is moved by the size of the step. The accordance is found between the change in active - inductive parameters when the position of the moving link
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Zheng, Fuzhong, Shaochun Huang, Yuan Zhai, Yi Xiang, and Ying Wu. "LED Device Based on Single-Walled Carbon Nanotube Arrays." Journal of Nanoelectronics and Optoelectronics 16, no. 3 (March 1, 2021): 368–73. http://dx.doi.org/10.1166/jno.2021.2963.

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The migration model of the (n, 0) zigzag SWNT is established on the basis of Mathiessen’s law to calculate carrier mobility, which are the foundation for performance analysis of electroluminescence light emission. The split-gate technique is used to create p-and n-doped regions in the single-walled carbon nanotube (SWNT) arrays that are separated by a gap with a width of several microns. The LED devices based on SWNT arrays using split-gate technique are fabricated and tested by using an optical measurement system. Compared to the LED with the central gate, the split-gate SWNT LED has enhanced the light generation efficiency of the intrinsic SWNT array segment by decreasing the potential barrier across the junction of the intrinsic SWNT array segment. The results demonstrate the luminescent principle of LED based on SWNT array in theoretical simulation and device measurement.
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Rashid, Muhammad Haroon, Ants Koel, Toomas Rang, Nadeem Nasir, Haris Mehmood, and Salman Cheema. "Modeling and Simulations of 4H-SiC/6H-SiC/4H-SiC Single Quantum-Well Light Emitting Diode Using Diffusion Bonding Technique." Micromachines 12, no. 12 (November 30, 2021): 1499. http://dx.doi.org/10.3390/mi12121499.

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In the last decade, silicon carbide (SiC) has emerged as a potential material for high-frequency electronics and optoelectronics applications that may require elevated temperature processing. SiC exists in more than 200 different crystallographic forms, referred to as polytypes. Based on their remarkable physical and electrical characteristics, such as better thermal and electrical conductivities, 3C-SiC, 4H-SiC, and 6H-SiC are considered as the most distinguished polytypes of SiC. In this article, physical device simulation of a light-emitting diode (LED) based on the unique structural configuration of 4H-SiC and 6H-SiC layers has been performed which corresponds to a novel material joining technique, called diffusion welding/bonding. The proposed single quantum well (SQW) edge-emitting SiC-based LED has been simulated using a commercially available semiconductor device simulator, SILVACO TCAD. Moreover, by varying different design parameters, the current-voltage characteristics, luminous power, and power spectral density have been calculated. Our proposed LED device exhibited promising results in terms of luminous power efficiency and external quantum efficiency (EQE). The device numerically achieved a luminous efficiency of 25% and EQE of 16.43%, which is at par performance for a SQW LED. The resultant LED structure can be customized by choosing appropriate materials of varying bandgaps to extract the light emission spectrum in the desired wavelength range. It is anticipated that the physical fabrication of our proposed LED by direct bonding of SiC-SiC wafers will pave the way for the future development of efficient and cost-effective SiC-based LEDs.
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Dissertations / Theses on the topic "Electrical device-LED"

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"A Study of Two High Efficiency Energy Conversion Processes: Semiconductor Photovoltaics and Semiconductor Luminescence Refrigeration." Doctoral diss., 2010. http://hdl.handle.net/2286/R.I.8671.

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abstract: As the world energy demand increases, semiconductor devices with high energy conversion efficiency become more and more desirable. The energy conversion consists of two distinct processes, namely energy generation and usage. In this dissertation, novel multi-junction solar cells and light emitting diodes (LEDs) are proposed and studied for high energy conversion efficiency in both processes, respectively. The first half of this dissertation discusses the practically achievable energy conversion efficiency limit of solar cells. Since the demonstration of the Si solar cell in 1954, the performance of solar cells has been improved tremendously and recently reached 41.6% energy conversion efficiency. However, it seems rather challenging to further increase the solar cell efficiency. The state-of-the-art triple junction solar cells are analyzed to help understand the limiting factors. To address these issues, the monolithically integrated II-VI and III-V material system is proposed for solar cell applications. This material system covers the entire solar spectrum with a continuous selection of energy bandgaps and can be grown lattice matched on a GaSb substrate. Moreover, six four-junction solar cells are designed for AM0 and AM1.5D solar spectra based on this material system, and new design rules are proposed. The achievable conversion efficiencies for these designs are calculated using the commercial software package Silvaco with real material parameters. The second half of this dissertation studies the semiconductor luminescence refrigeration, which corresponds to over 100% energy usage efficiency. Although cooling has been realized in rare-earth doped glass by laser pumping, semiconductor based cooling is yet to be realized. In this work, a device structure that monolithically integrates a GaAs hemisphere with an InGaAs/GaAs quantum-well thin slab LED is proposed to realize cooling in semiconductor. The device electrical and optical performance is calculated. The proposed device then is fabricated using nine times photolithography and eight masks. The critical process steps, such as photoresist reflow and dry etch, are simulated to insure successful processing. Optical testing is done with the devices at various laser injection levels and the internal quantum efficiency, external quantum efficiency and extraction efficiency are measured.
Dissertation/Thesis
Ph.D. Physics 2010
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Štípek, Radek. "Prvková analýza plochých zobrazovacích zařízení pro urban mining." Master's thesis, 2016. http://www.nusl.cz/ntk/nusl-351394.

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aaaaaRare earth elements (Sc, Y and group 15 lanthanides) and their compounds currently have significant practical use in metallurgy, glass industry, as highly active catalysts for the production of so-called. NiMH batteries, alloys for the manufacture of permanent magnets and e.g. moderators rods in the nuclear energy, but above all they have an irreplaceable role in modern electronics for phosphors TV screens, CRT earlier today, PDP and LCD monitors and displays, tablets, mobile phones etc., which give them a high-quality picture and sound. Unlike most base and precious metals are concentrated in the conquerable ore deposits, occur in the form of compounds as part of mixed minerals in the rarely economically exploitable concentrations, a mining and processing is costly and negative impacts on the environment, paradoxically towards the title but their overall content in the crust is relatively high, the average concentration in the range of about 150 to 220 ppm. The main world producer of REE, China, in 2010, significantly reduced exports by 40 %, making prices of some REE increased up to 1500 % during the month. Demand for REE is growing, so often talks about the recycling of valuable materials back into production, as called. "Urban mining", ie "urban mining", thereby reducing the amount of...
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Book chapters on the topic "Electrical device-LED"

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P., Srividya. "SOI Technology in Designing Low-Power VLSI Circuits." In Advances in Computer and Electrical Engineering, 17–28. IGI Global, 2022. http://dx.doi.org/10.4018/978-1-6684-4974-5.ch002.

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At present, the transistor size is reduced to a few tens of nanometers, as larger transistors demand a large die area and power. Power is an important design parameter in multi-gigahertz communication and ASIC/SOC designs. To deliver higher performance with lower power, various technologies are adopted in semiconductor industry. SOI is one such technology that helps in achieving higher performance. It offers a platform to integrate digital and RF circuit onto a single chip. Adopting SOI technology, faster chips with lesser power can be designed. This extends the battery life of handheld devices. The SOI structure is comparable to MOSFET except for an added buried oxide (Box) layer beneath the device region. The Box layer isolates the top and the base silicon layers and reduces the junction capacitances. This reduction accelerates the speed, lowers the power consumption, allows higher transistor stacking, and improves the device performance. These capabilities have led SOI usage in RF circuits. This chapter discusses the SOI technology in building energy- and power-efficient designs.
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Mullick, S. "“Ferrites”: Synthesis, Structure, Properties and Applications." In Materials Research Foundations, 1–61. Materials Research Forum LLC, 2021. http://dx.doi.org/10.21741/9781644901595-1.

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Ferrites synthesis method and characterization techniques are attracting huge attentions of researchers because of their wide scope of uses in numerous areas. The ferrites include high resistivity, saturation magnetization, permeability, coercivity and low power losses. The above-mentioned useful ferrites characteristics make them appropriate for use in different applications. These ferrites are used in biomedical field for cancer cure and MRI. Electronic applications are transformers, transducers, and inductors which are also made using ferrites and also used in making magnetic fluids, sensors, and biosensors. Ferrite is a profoundly helpful material for many electrical and electronic applications. It has applications in pretty much every domestic device like LED bulb, mobile charger, TV, microwave, fridge, PC, printer, etc. This review mainly focus on the synthesis method, characterization techniques, and implementation of FNPs. This Chapter presents various methods used for ferrites preparation with distinctive examples, their advantages as well as limitations in detail. Ferrites properties like structural, optical, electrical and magnetic with their characterization techniques and various applications in the areas of biomedical, electronics, and environment are also discussed.
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Harcourt, Alison, George Christou, and Seamus Simpson. "802.11ax." In Global Standard Setting in Internet Governance, 102–21. Oxford University Press, 2020. http://dx.doi.org/10.1093/oso/9780198841524.003.0006.

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The local wireless environment has been the setting for the co-existence of licensed mobile communications operators and unlicensed WiFi Internet access providers. The IEEE802.11 family of standards, developed for WiFi services in the Institute of Electrical and Electronics Engineers (IEEE), has dominated standards-setting. However, the burgeoning demand for mobile access to the Internet has led to competition for space on the spectrum. Left unaddressed, this co-existence has created practical issues of potential territorial incursion, technical interference, and, ultimately, device underperformance and service degradation. The chapter focuses on the IEEE’s efforts to create a co-existence standard in a crowded and highly contested standards-making space. It shows how alternative standards-making organizational contexts, based on licensed spectrum standards traditions, were able to develop and insert co-existence standards for WiFi ahead of the IEEE initiative. The chapter explains how the IEEE developed its 802.11ax co-existence standard in this environment.
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Anton Okhai, Timothy, Azeez O. Idris, Usisipho Feleni, and Lukas W. Snyman. "Nanomaterial-Enhanced Receptor Technology for Silicon On-Chip Biosensing Application." In Biosensor - Current and Novel Strategies for Biosensing [Working Title]. IntechOpen, 2020. http://dx.doi.org/10.5772/intechopen.94249.

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Nanomaterials integration in biosensors designs are known to enhance sensing and signaling capabilities by exhibiting remarkably high surface area enhancement and intrinsic reactivity owing to their distinctive optical, chemical, electrical and catalytic properties. We present the synthesis and characterization of silver nanoparticles (AgNPs), and their immobilization on a silicon on-chip biosensor platform to enhance sensing capability for prostate specific antigen (PSA) - cancer biomarkers. Several techniques, including UV-Visible (UV-Vis) absorption spectrum, Fourier transforms infrared spectroscopy (FTIR), high resolution transmission electron microscopy (HRTEM), scanning electron microscopy (SEM) and field emission scanning electron microscopy (FESEM) were used for characterizing the AgNPs. The biochemical sensor consists of AgNPs immobilized on the receptor layer of a silicon avalanche mode light emitting device (Si AM LED) which enables on-chip optical detection biological analytes. A bio-interaction layer etched from the chip interacts with the evanescent field of a micro dimensioned waveguide. An array of detectors below the receptor cavity selectively monitor reflected light in the UV, visible, infrared and far infrared wavelength regions. AgNPs used as an immobilization layer in the receptor layer enhances selective absorption analytes, causing a change in detection signal as a function of propagation wavelength as light is dispersed. The analytes could range from gases to cancer biomarkers like prostate specific antigen.
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Gupta, Shubha, Navitra Suman, and Neeraj Kumar Rai. "Implication of Biosensors For Cancer Diagnosis And Therapeutic." In Recent Advances in Biosensor Technology, 97–111. BENTHAM SCIENCE PUBLISHERS, 2023. http://dx.doi.org/10.2174/9789815123739123010008.

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“Caution is the parent of Safety”. Early-stage diagnosis of Cancer can provide better medicinal therapeutic responses. Currently, a majority of cancer is diagnosed after having metastasized throughout the body. This led to the urgent requirement for potent and precise cancer detection methods for clinical diagnosis. Over the last several decades, the majority of researchers have concentrated their efforts on developing a potential rapid detection technique based on Biosensor technology for a variety of frightening human health-related disorders, such as cardiovascular disease, cancer, diabetes, and others. Significant advances were made in a wide range of fields attributed to the designed techniques having enhanced sensitivity, specificity, and repeatability. The development of diagnostic treatments in medicine was aided by noteworthy advancements in other scientific fields, including genetics, chemistry, micro-electrical engineering, and computational biology. As a result, efficient, accurate, rapid, and steady sensing platforms have been successfully developed for specific and ultrasensitive biomarker-based disease diagnostics. Biosensors are analytical devices designed to detect biological analytes by converting biological entities’ responses (DNA, RNA, Protein) into potent electrical signals. The biosensor device combines a biological component with a physiochemical detector for sensing an analyte (biological samples). The discovery of the Biosensor boosted the potential clinical diagnosis of cancer at a large scale. Biosensors can be designed to detect emerging cancer biomarkers and determine drug efficacy at various target sites. Biosensor technology has the potential to be used as a diagnostic tool for accurate and impressive cancer cell imaging, tracking cancer cell angiogenesis and metastasis, and evaluating the efficacy of treatment for the disease. This chapter will provide a quick overview of the challenges facing the early diagnosis of cancer, get through the depth of how biosensor technology may be used as a reliable diagnostic tool, and highlight potential uses for biosensor technology in the future.
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Kaswan, Kuldeep Singh, and Jagjit Singh Dhatterwal. "Brain and Computer Interface." In Advances in Computing Communications and Informatics, 19–45. BENTHAM SCIENCE PUBLISHERS, 2022. http://dx.doi.org/10.2174/9789815040401122030004.

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Brain-computer interfaces (BCIs) are defined as the science and technology of devices and systems responding to neural processes in the brain that generate motor movements and to cognitive processes (e.g., memory) that modify motor movements. Advances in neuroscience, computational technology, component miniaturization, the biocompatibility of materials, and sensor technology have led to the much-improved feasibility of useful BCIs. Brain-Computer Interface can be developed by engineers, neuroscientists, physical scientists, and behavioral and social scientists as a team effort. A study on brain computers (BCI) discusses how the brain and external systems interact. In intrusive systems, electrodes are implanted in the cortex; in non-invasive systems, they are mounted on the scalp and use electroencephalography or electrocorticography to monitor neuronal activity. The BCI systems can be generally ranked based on the location of the electrodes used for detecting and measuring neurons in the brain. This WTEC report was intended to compile and reveal to government decision-makers and the scientific community the information on global developments and patterns in BCI research. The design of hardware, device architecture, functional electrical stimulation, non-invasive systems of communication, academic and industrial cognitive and emotional neuroprosthesis has been discussed in this chapter. The purpose of the present chapter is to review the current sensor technologies used for invasive and non-invasive BCI approaches throughout North America, Europe, and Asia. We have visited and/or interacted with key laboratories with expertise in these areas. Although not completely comprehensive, this chapter gives an overview of the major sensor technologies being developed for potential BCI applications.
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Conference papers on the topic "Electrical device-LED"

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Todorov, Georgi, Konstantin Kamberov, Hristo Vasilev, and Tsvetozar Ivanov. "Design Variants Assessment Of Street LED Device Based On Virtual Prototyping." In 2021 17th Conference on Electrical Machines, Drives and Power Systems (ELMA). IEEE, 2021. http://dx.doi.org/10.1109/elma52514.2021.9503086.

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Setiabudy, Rudy, Muhammad Rully Syahputra, and Herlina. "The Effect of Surface Mounted Device (SMD) Configuration Array on Light Distribution on LED Lamp." In 2018 International Conference on Electrical Engineering and Computer Science (ICECOS). IEEE, 2018. http://dx.doi.org/10.1109/icecos.2018.8605237.

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Simard-Normandin, M., C. Banks, N. Havercroft, P. Clark, and E. Tallarek. "ToF-SIMS, Time-of-Flight Secondary Ion Mass Spectroscopy for Counterfeit Detection of Electrical, Electronic, and Electromechanical (EEE) Parts." In ISTFA 2019. ASM International, 2019. http://dx.doi.org/10.31399/asm.cp.istfa2019p0053.

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Abstract This presentation demonstrates how Time-of-Flight Secondary Ion Mass Spectroscopy provides unique information to identify suspect counterfeit semiconductor devices. An example is shown where the epitaxial layers of a light emitting device (LED) do not match those of the exemplar. Keywords: Secondary Ion Mass Spectroscopy, SIMS, counterfeit detection, LED, Light emitting diode.
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Towse, Alexander J., Benjamin C. Fortune, Chistopher G. Pretty, and Michael P. Hayes. "A Tripolar Electromyography Device With Active Electrode-Skin Impedance Imbalance Compensation." In ASME 2021 International Design Engineering Technical Conferences and Computers and Information in Engineering Conference. American Society of Mechanical Engineers, 2021. http://dx.doi.org/10.1115/detc2021-71924.

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Abstract This paper discusses the development of a tripolar EMG device featuring electrode impedance compensation circuitry. The device also includes circuitry to test the effectiveness of these features at improving EMG signal quality. Due to various factors, the electrode-skin impedance of different electrodes is typically imbalanced. This imbalance increases EMG susceptibility to electrical noise. These issues can be mitigated by applying impedance compensation. This was done for a tripolar configuration specifically to also reduce interference due to crosstalk. The development process and design choices behind the device features are discussed, with particular focus on the impedance compensation circuit. This includes key components used, and the justification behind their selection. Testing found the tripolar electrode configuration had limited effect on crosstalk interference. Fortunately, the impedance compensation circuit could successfully correct for impedance imbalance. This led to a marked reduction in noise due to electrical interference, such as from 50Hz mains hum.
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Chen, Liangshan, Yuting Wei, Tanya Schaeffer, and Chongkhiam Oh. "Identifying the Root Cause of Source-Drain Leakage Caused Soft Fail in Advanced Bulk FinFET Devices." In ISTFA 2018. ASM International, 2018. http://dx.doi.org/10.31399/asm.cp.istfa2018p0383.

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Abstract The paper reports the investigation on the root cause of source-drain leakage in bulk FinFET devices. While the failing device was readily isolated by nanoprobing technique and the electrical analysis pinpointed the potential defect location inside the Fin channel, the identification of physical root cause went through extreme challenges imposed by the tiny-sized device and the unique FinFET 3D architecture. The initial TEM analysis was misled by the projection of a species in the lamella surface and thus could not explain the electrical data. Careful analysis on the device structure was able to identify the origin of the species and led to the discovery of the actual root cause. This paper will provide the analysis details leading to the findings, and highlight the role of electrical understanding in not only providing guidance for physical analysis but also revealing the true root cause of failure in FinFET devices.
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Tagawa, A., H. Minami, M. Mitani, T. Noda, K. Sasagawa, T. Tokuda, H. Tamura, et al. "A Multimodal CMOS Sensor Device with an On-Chip Mounted LED and Electrodes for Imaging of Fluorescence and Electrical Potential in a Mouse Deep Brain." In 2009 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2009. http://dx.doi.org/10.7567/ssdm.2009.j-7-4.

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Tsang, Yuk L., Alex VanVianen, Xiang D. Wang, and N. David Theodore. "Analysis of an Anomalous CMOS Transistor Exhibiting Drain to Source Leakage—Its Model and Cause." In ISTFA 2014. ASM International, 2014. http://dx.doi.org/10.31399/asm.cp.istfa2014p0205.

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Abstract In this paper, we report a device model that has successfully described the characteristics of an anomalous CMOS NFET and led to the identification of a non-visual defect. The model was based on detailed electrical characterization of a transistor exhibiting a threshold voltage (Vt) of about 120mv lower than normal and also exhibiting source to drain leakage. Using a simple graphical simulation, we predicted that the anomalous device was a transistor in parallel with a resistor. It was proposed that the resistor was due to a counter doping defect. This was confirmed using Scanning Capacitance Microscopy (SCM). The dopant defect was shown by TEM imaging to be caused by a crystalline silicon dislocation.
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Feenstra, Joel, Jonathan Granstrom, and Henry A. Sodano. "Amplified Piezoelectric Stack Actuators for Harvesting Electrical Energy From a Backpack." In ASME 2007 International Design Engineering Technical Conferences and Computers and Information in Engineering Conference. ASMEDC, 2007. http://dx.doi.org/10.1115/detc2007-35813.

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Over the past few decades the use of portable and wearable electronics has grown steadily. These devices are becoming increasingly more powerful, however, the gains that have been made in the device performance has resulted in the need for significantly higher power to operate the electronics. This issue has been further complicated due to the stagnate growth of battery technology over the past decade. In order to increase the life of these electronics, researchers have begun investigating methods of generating energy from ambient sources such that the life of the electronics can be prolonged. Recent developments in the field have led to the design of a number of mechanisms that can be used to generate electrical energy, from a variety of sources including thermal, solar, strain, inertia, etc. Many of these energy sources are available for use with humans, but their use must be carefully considered such that parasitic effects that could disrupt the user’s gait or endurance are avoided. This study develops a novel energy harvesting backpack that can generate electrical energy from the differential forces between the wearer and the pack. The goal of this system is to make the energy harvesting device transparent to the wearer such that his or her endurance and dexterity is not compromised. This will be accomplished by replacing the strap buckle with a mechanically amplified piezoelectric stack actuator. Piezoelectric stack actuators have found little use in energy harvesting applications due to their high stiffness which makes straining the material difficult. This issue will be alleviated using a mechanically amplified stack which allows the relatively low forces generated by the pack to be transformed to high forces on the piezoelectric stack. This paper will develop a theoretical model of the piezoelectric buckle and perform experimental testing to validate the model accuracy and energy harvesting performance.
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Kearney, Ian, and Hank Sung. "Integrated ESD Robustness through Device Analysis of Ultra-Small Low Voltage Power MOSFETs." In ISTFA 2014. ASM International, 2014. http://dx.doi.org/10.31399/asm.cp.istfa2014p0350.

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Abstract Low voltage power MOSFETs often integrate voltage spike protection and gate oxide ESD protection. The basic concept of complete-static protection for the power MOSFETs is the prevention of static build-up where possible and the quick, reliable removal of existing charges. The power MOSFET gate is equivalent to a low voltage low leakage capacitor. The capacitor plates are formed primarily by the silicon gate and source metallization. The capacitor dielectric is the silicon oxide gate insulation. Smaller devices have less capacitance and require less charge per volt and are therefore more susceptible to ESD than larger MOSFETs. A FemtoFETTM is an ultra-small, low on-resistance MOSFET transistor for space-constrained handheld applications, such as smartphones and tablets. An ESD event, for example, between a fingertip and the communication-port connectors of a cell phone or tablet may cause permanent system damage. Through electrical characterization and global isolation by active photon emission, the authors identify and distinguish ESD failures. Thermographic analysis provided additional insight enabling further separation of ESD failmodes. This paper emphasizes the role of failure analysis in new product development from the create phase through to product ramp. Coupled with device electrical simulation, the analysis observations led to further design enhancement.
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Zhang, Qin, and Jing Liu. "Additive Manufacturing of Conformable Electronics on Complex Objects Through Combined Use of Liquid Metal Ink and Packaging Material." In ASME 2013 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2013. http://dx.doi.org/10.1115/imece2013-66607.

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Abstract:
Conventional electronics manufacturing strategies are generally complicated, time, water, material and energy consuming. Besides, building an electronic device on a complex object generally requests a series of different connecting wires which would make the machine in a mess. Here from an alternative approach, we proposed an innovative method of realizing conformable electronic connection by the low melting point metal ink and the related flexible packaging material for quickly manufacturing electronics. The liquid metal ink could easily and directly be written on a series of complex surfaces and then coated with the packaging material which is to offer mechanical strength and prevent it from air oxygenization. For illustrating purpose, an electrical connection of LED circuit on cylindrical surface, concave, inclined structure, planes of right angle and sphere was demonstrated. Such optoelectronic device appears rather compact without any evident connecting wires exposing out. Further, a thermal cycle experiment (−40°C∼120°C) was designed to test the variation of the electrical properties of the working sample. It is disclosed that the conductive line covered by the packaging material has a temperature coefficient of 0.255 mΩ/°C (T0 = −16°C) and finally an increasing rate of only 4.24% in resistance after all thermal aging cycles. This electrical connection method is expected to have a significant impact in surface mount technology. Its applications will not only in industry but also can change the way we interact with each other and our everyday life.
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