Dissertations / Theses: 'Double Heterojunction Bipolar Transistor'

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Ang, Oon Sim. "Modeling of double heterojunction bipolar transistors." Thesis, University of British Columbia, 1990. http://hdl.handle.net/2429/29458.

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A one-dimensional analytical model in the Ebers-Moll formulation of a graded base double heterojunction bipolar transistor (DHBT) is developed and used to examine the effects of base grading, the emitter-base barrier and the base-collector barrier on the d.c. current gain, offset voltage and the high frequency performance of a N — Al[formula omitted]Ga₁[formula omitted]As/p — Al[formula omitted]Ga₁[formula omitted]As/N — Al[formula omitted]Ga₁[formula omitted]As DHBTs. Recombination processes considered in the space charge regions and the neutral regions are: Shockley-Read-Hall, radiative and Auger. The trade-off between base-grading, which reduces the base current, and the neutral base recombination, which is brought about by varying the aluminium the junctions, results in an optimum aluminium mole fraction profile regarding the d.c. current gain. For high frequency performance, a similar trade-off to that of the d.c. situation exists. In this case, the important manifestation of the increased collector-base barrier height is an increase in the base transit time. The aluminium mole fraction profile which optimises the unity gain cut-off frequency, f[formula omitted], and the unity power gain cut-off frequency, f[formula omitted], is established. DHBTs which are symmetrical, both in aluminium mole fraction and doping concentration profiles, are shown to have low common-emitter offset voltages, V[formula omitted],[formula omitted]. Base-grading reduces V[formula omitted],[formula omitted] in devices in which the difference between the emitter and collector aluminium mole fraction is < 0.1; otherwise, V[formula omitted],[formula omitted] increases as base-grading increases. The model is also used to examine the performance of a N-Al[formula omitted]Ga₁[formula omitted]As/p-In[formula omitted]Ga₁[formula omitted]As/N-Al[formula omitted]Ga₁[formula omitted]As DHBT. It is shown that radiative and Auger recombination limit the d.c. current gain in this device.
Applied Science, Faculty of
Electrical and Computer Engineering, Department of
Graduate

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BALARAMAN, PRADEEP ARUGUNAM. "DESIGN, SIMULATION AND MODELING OF InP/GaAsSb/InP DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS." University of Cincinnati / OhioLINK, 2003. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1069275786.

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Flitcroft, Richard M. "Wide bandgap collector III-V double heterojunction bipolar transistors." Thesis, University of Sheffield, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.341875.

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Schnyder, Iwan. "An indium-phosphide double-heterojunction bipolar transistor technology for 80 Gb/s integrated circuits /." Konstanz : Hartung-Gorre, 2005. http://www.loc.gov/catdir/toc/fy0610/2006356171.html.

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5

Zhang, Yun. "Development of III-nitride bipolar devices: avalanche photodiodes, laser diodes, and double-heterojunction bipolar transistors." Diss., Georgia Institute of Technology, 2011. http://hdl.handle.net/1853/42703.

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This dissertation describes the development of III-nitride (III-N) bipolar devices for optoelectronic and electronic applications. Research mainly involves device design, fabrication process development, and device characterization for Geiger-mode gallium nitride (GaN) deep-UV (DUV) p-i-n avalanche photodiodes (APDs), indium gallium nitride (InGaN)/GaN-based violet/blue laser diodes (LDs), and GaN/InGaN-based npn radio-frequency (RF) double-heterojunction bipolar transistors (DHBTs). All the epitaxial materials of these devices were grown in the Advanced Materials and Devices Group (AMDG) led by Prof. Russell D. Dupuis at the Georgia Institute of Technology using the metalorganic chemical vapor deposition (MOCVD) technique. Geiger-mode GaN p-i-n APDs have important applications in DUV and UV single-photon detections. In the fabrication of GaN p-i-n APDs, the major technical challenge is the sidewall leakage current. To address this issue, two surface leakage reduction schemes have been developed: a wet-etching surface treatment technique to recover the dry-etching-induced surface damage, and a ledged structure to form a surface depletion layer to partially passivate the sidewall. The first Geiger-mode DUV GaN p-i-n APD on a free-standing (FS) c-plane GaN substrate has been demonstrated. InGaN/GaN-based violet/blue/green LDs are the coherent light sources for high-density optical storage systems and the next-generation full-color LD display systems. The design of InGaN/GaN LDs has several challenges, such as the quantum-confined stark effect (QCSE), the efficiency droop issue, and the optical confinement design optimization. In this dissertation, a step-graded electron-blocking layer (EBL) is studied to address the efficiency droop issue. Enhanced internal quantum efficiency (ɳi) has been observed on 420-nm InGaN/GaN-based LDs. Moreover, an InGaN waveguide design is implemented, and the continuous-wave (CW)-mode operation on 460-nm InGaN/GaN-based LDs is achieved at room temperature (RT). III-N HBTs are promising devices for the next-generation RF and power electronics because of their advantages of high breakdown voltages, high power handling capability, and high-temperature and harsh-environment operation stability. One of the major technical challenges to fabricate high-performance RF III-N HBTs is to suppress the base surface recombination current on the extrinsic base region. The wet-etching surface treatment has also been employed to lower the surface recombination current. As a result, a record small-signal current gain (hfe) > 100 is achieved on GaN/InGaN-based npn DHBTs on sapphire substrates. A cut-off frequency (fT) > 5.3 GHz and a maximum oscillation frequency (fmax) > 1.3 GHz are also demonstrated for the first time. Furthermore, A FS c-plane GaN substrate with low epitaxial defect density and good thermal dissipation ability is used for reduced base bulk recombination current. The hfe > 115, collector current density (JC) > 141 kA/cm², and power density > 3.05 MW/cm² are achieved at RT, which are all the highest values reported ever on III-N HBTs.

6

Lee, Tae-Woo. "An experimental and theoretical study of InGaP-GaAs double heterojunction bipolar transistors." Thesis, University of Sheffield, 1992. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.324090.

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Balaraman, Pradeep A. "Design, simulation and modelling of InP/GaAsSb/InP double heterojunction bipolar transistors." Cincinnati, Ohio : University of Cincinnati, 2003. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=ucin1069275786.

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Bauknecht, Raimond. "InP double heterojunction bipolar transistors for driver circuits in fiber optical communication systems /." [S.l.] : [s.n.], 1998. http://e-collection.ethbib.ethz.ch/show?type=diss&nr=12455.

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Mohiuddin, Muhammad. "InGaAs/InA1As Double Heterojunction Bipolar transistors for high-speed, low-power digital applications." Thesis, University of Manchester, 2010. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.511942.

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Schneider, Karl. "Broadband amplifiers for high data rates using InP, InGaAs double heterojunction bipolar transistors." Karlsruhe : Univ.-Verl. Karlsruhe, 2006. http://deposit.d-nb.de/cgi-bin/dokserv?idn=979772826.

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Chen, Pin-Fan. "Investigation of GaInP/GaAs double heterojunction bipolar transistors for microwave power amplifier applications /." Diss., Connect to a 24 p. preview or request complete full text in PDF format. Access restricted to UC campuses, 2001. http://wwwlib.umi.com/cr/ucsd/fullcit?p3001274.

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Sotoodeh, Mohammed. "Design, characterisation, and numerical simulation of double heterojunction bipolar transistors for microwave power applications." Thesis, King's College London (University of London), 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.367945.

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13

He, Jianqing. "Investigation of transport mechanisms for n-p-n InP/InGaAs/InP double heterojunction bipolar transistors." Thesis, Virginia Tech, 1989. http://hdl.handle.net/10919/44645.

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A more complete model for InP/InGaAs Double Heterojunction Bipolar Transistors (DHBT) is obtained in this thesis by physically analyzing the transport process of the main current components. The potential distribution of the energy barrier constitutes a fundamental analytical concept and is employed for applying the diffusion, the thermionic emission, and the tunneling theories in investigating the injection mechanisms at the e-b heterojunction interface. The diffusion transport is considered first for electron injection from the emitter into the base. The thermionic emission is applied properly at the point of maximum potential energy as one of the boundary conditions at that interface. A suitable energy level is selected with respect to which the energy barrier expression is expanded for the calculation of the tunneling probability. The first "spike" at the conduction band discontinuity is described as the potential energy for the injected electrons to obtain kinetic energy to move into the base region with a substantially high Velocity. The electron blocking action of the second "spike" at the bâ c junction is also analyzed by considering the transport Velocity with which electrons are swept out of that boundary. Based on the material parameters recently reported for both InP and InGaAs, computations of the nI current components are carried out to provide Ã characteristics in good agreement with the reported experimental results.
Master of Science

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Schneider, Karl [Verfasser]. "Broadband amplifiers for high data rates using InP, InGaAs double heterojunction bipolar transistors / von Karl Schneider." Karlsruhe : Univ.-Verl. Karlsruhe, 2006. http://d-nb.info/979772826/34.

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15

Davy, Nil. "Optimisation du transistor bipolaire à double hétérojonction sur substrat d’InP (TBDH InP) pour circuits intégrés ultra-rapides." Electronic Thesis or Diss., Bordeaux, 2024. http://www.theses.fr/2024BORD0043.

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À l'ère des technologies de l'information, nous assistons à une augmentation continue du volume de données échangées. Celle-ci s'accompagne d'un besoin constant d'augmenter la bande passante des systèmes de communications optiques et radio-fréquences. Cette demande continue d'augmentation de la bande passante nécessite la conceptions de circuits toujours plus rapides capables de supporter la demande croissante de trafic de données. Ces circuits doivent eux-même s'appuyer sur des technologies de composants électroniques toujours plus rapides. C'est dans ce contexte que sont développés les transistors bipolaires à double hétérojonction (TBDH) en InP/InGaAs. Grâce aux propriétés des semi-conducteurs III-V, ces composants sont capable de fonctionner à des fréquences très élevées (> 500 GHz) tout en maintenant une tension de claquage relativement élevé (> 4V).Les travaux de cette thèse portent sur l'amélioration des performances de ces composants. Nous commencerons par nous intéresser à l'amélioration des mesures haute-fréquences des transistors afin de pouvoir évaluer leurs performances fréquentielles. Nous détaillerons les différents choix associées aux mesures (calibration, de-embedding, modèle de pointes RF) et proposerons des nouveaux plots de mesure. Dans un second temps, nous développerons un modèle analytique tenant comptes des spécifités du dessin et de la technologie du composant. Une fois calibré sur des mesures, celui-ci servira à déterminer les principaux axes d'amélioration des performances. Ensuite nous étudierons les performances de plusieures structures épitaxiales dans le but de réduire le temps de transit des électrons tout en maximisant les performances fréquentielles. Une nouvelle structure, optimisée pour maximiser la fréquence transition, sans dégrader la fréquence maximale d'oscillation, sera proposée. Par la suite nous étudierons les phénomènes physiques qui limitent la tension de claquage du transistor. Enfin, nous nous intéresserons au phénomène d'auto-échauffement qui dégrade les performances du transistor. Nous proposerons une modélisation de la résistance thermique et les pistes d'améliorations associées
In the era of information technology, we are witnessing a continuous increase in the volume of exchanged data. This comes with a constant need to enhance the bandwidth of optical and radio-frequency communication systems. The ongoing demand for increased bandwidth requires the design of faster circuits capable of supporting the growing data traffic. These circuits, in turn, must rely on ever-faster electronic component technologies. It is in this context that double-heterojunction bipolar transistors (DHBTs) in InP/InGaAs are developed. Thanks to the properties of III-V semiconductors, these components can operate at very high frequencies (> 500 GHz) while maintaining a relatively high breakdown voltage (> 4V).This thesis focus on improving the performance of these components. We will begin by addressing the improvement of high-frequency measurements of transistors to evaluate their frequency performance. We will delve into various choices associated with measurements (calibration, de-embedding, RF probe models) and introduce new measurement pads. In the second part, we will develop an analytical model, taking into account the specifics of the design and technology of the component. Once calibrated on measurements, this model will be used to determine the main axes for improving performance. Next, we will study the performance of several epitaxial structures with the aim of reducing electron transit time while maximizing frequency performance. A new structure, optimized to maximize the transition frequency without degrading the maximum oscillation frequency, will be proposed. Subsequently, we will investigate the physical phenomena limiting the breakdown voltage of the transistor. Finally, we will focus on the self-heating phenomenon that degrades transistor performance. We will propose a thermal resistance model and associated improvement strategies

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Knight, Robert John. "The development of a novel all ternary InAlAs/InGaAs double heterojunction bipolar transistor (DHBT) for the design, simulation and fabrication of a static divide-by-2 frequency divider." Thesis, University of Manchester, 2012. https://www.research.manchester.ac.uk/portal/en/theses/the-development-of-a-novel-all-ternary-inalasingaas-double-heterojunction-bipolar-transistor-dhbt-for-the-design-simulation-and-fabrication-of-a-static-divideby2-frequency-divider(5b2d74ab-ca13-4c1a-8b79-368687255172).html.

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The research focused on evaluating the feasibility into Microwave Monolithic Integrated Circuits (MMIC) fabrication capability, in the UK, using novel material type: all ternary In0.52Al0.48As/In0.53Ga0.47As lattice matched to InP substrate double heterojunction bipolar transistor (DHBT) technology; with the potential for providing high speed HBTs. The demonstration of a MMIC capability would follow with the development of a BiFET process that would satisfy SELEX Galileo circuit business needs. The research project complexity is divide into 5 phases: phase 1, the development of a high frequency In0.52Al0.48As / In0.53Ga0.47As lattice matched to InP substrate DHBT technology; phase 2, development of passive components; phase 3, the creation of two VBIC physical models; phase 4, the creation of a Process Development Kit (PDK) and phase 5, the design, simulation and fabrication of a divide-by-2 frequency divider using the technology developed in phase 1. Phase 1, concluded with a DHBT epitaxial design and fabrication that produced devices with a peak high frequency performance f_t = 140GHz and f_max = 95GHz at a current density Jc ≈ 1mA/µm2. This was achieved through the optimisation of the epitaxial design to reduce the base transit time τb through the introduction of a quasi electric field and thinning of base layer. To the best of the author’s knowledge, this is the highest f_t performance for a 1µm emitter width all ternary In0.52Al0.48As / In0.53Ga0.47As DHBT. The design, simulation and fabrication of a divide-by-2 frequency divider were only made possible by the successfully development of passive components (phase 2) and the VBIC model and PDK creation (phase 3 and 4). The divide-by-2 frequency divider design and simulation was done via the use of the PDK. The simulations resulted in a divide-by-2 frequency divider with a maximum operating frequency of 27GHz at a minimum input power of 2dBm. The fabrication of the MMIC resulted in a transistor component yield of 69%, which unfortunately resulted in a divide-by-2 frequency divider circuit yield of 0%. The fabrication of MMIC circuits is not possible with current state of the fabrication environment; however the only obstacle the University of Manchester (UoM) faces is low active component yield. To increase the active component yield to the 95% level required for high circuit yields, large capital investment into the fabrication equipment and human time into setting up the fabrication process to a repeatable and reliable standard is required.

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Tan, Eugene. "Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC), double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT)." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1998. http://www.collectionscanada.ca/obj/s4/f2/dsk1/tape11/PQDD_0006/NQ42767.pdf.

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18

Dupuy, Jean-Yves. "Théorie et Pratique de l'Amplificateur Distribué : Application aux Télécommunications Optiques à 100 Gbit/s." Thesis, Cergy-Pontoise, 2015. http://www.theses.fr/2015CERG0759/document.

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La théorie, la conception, l'optimisation et la caractérisation d'amplificateurs distribués en technologie TBDH InP 0,7 µm, pour les systèmes de communications optiques à 100 Gbit/s, sont présentés. Nous montrons comment l'exploitation adaptée du concept d'amplificateur distribué avec une technologie de transistors bipolaires à produit vitesse-amplitude élevé a permis la réalisation d'un driver de modulateur électro-optique fournissant une amplitude différentielle d'attaque de 6,2 et 5,9 Vpp, à 100 et 112 Gbit/s, respectivement, avec une qualité de signal élevée. Ce circuit établit ainsi le record de produit vitesse-amplitude à 660 Gbit/s.V sur tranche et 575 Gbit/s.V en module hyperfréquence. Dans le cadre du projet Européen POLYSYS, il a été associé à un laser accordable et un modulateur pour la réalisation d'un module transmetteur optoélectronique compact, démontrant des performances avançant l'état de l'art des communications optiques courtes distances à 100 Gbit/s
The theory, design, optimisation and characterisation of distributed amplifiers in 0.7-µm InP DHBT technology, for 100-Gbit/s optical communication systems, are presented. We show how the appropriate implementation of the distributed amplifier concept in a bipolar transistors technology with high swing-speed product has enabled the realisation of an electro-optic modulator driver with 6.2- and 5.9-Vpp differential driving amplitude at 100 and 112 Gb/s, respectively, with a high signal quality. This circuit thus establishes the swing-speed product record at 660 Gb/s.V on wafer and at 575 Gb/s.V in a microwave module. In the frame of the European project POLYSYS, it has been co-packaged with a tunable laser and a modulator to realise a compact optoelectronic transmitter module, which has demonstrated performances advancing the state of the art of short reach 100-Gb/s optical communications

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Chik, Hope Wuming. "Emitter-up heterojunction bipolar transistor-compatible laser." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1998. http://www.collectionscanada.ca/obj/s4/f2/dsk2/tape17/PQDD_0014/MQ34129.pdf.

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20

Hall, S. "An integrated Schottky-collector heterojunction bipolar transistor." Thesis, University of Liverpool, 1987. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.384387.

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21

Mawby, P. A. "Characterisation and fabrication of heterojunction bipolar transistors." Thesis, University of Leeds, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.383334.

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22

Yüksel, Ayça. "The AlInP material system in heterojunction bipolar transistor technology." Thesis, Massachusetts Institute of Technology, 1994. http://hdl.handle.net/1721.1/37728.

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23

Suvar, Erdal. "SiGeC Heterojunction Bipolar Transistors." Doctoral thesis, KTH, Microelectronics and Information Technology, IMIT, 2003. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3674.

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Heterojunction bipolar transistors (HBT) based on SiGeC havebeen investigated. Two high-frequency architectures have beendesigned, fabricated and characterized. Different collectordesigns were applied either by using selective epitaxial growthdoped with phosphorous or by non-selective epitaxial growthdoped with arsenic. Both designs have a non-selectivelydeposited SiGeC base doped with boron and a poly-crystallineemitter doped with phosphorous.

Selective epitaxial growth of the collector layer has beendeveloped by using a reduced pressure chemical vapor deposition(RPCVD) technique. The incorporation of phosphorous and defectformation during selective deposition of these layers has beenstudied. A major problem of phosphorous-doping during selectiveepitaxy is segregation. Different methods, e.g. chemical orthermal oxidation, are shown to efficiently remove thesegregated dopants. Chemical-mechanical polishing (CMP) hasalso been used as an alternative to solve this problem. The CMPstep was successfully integrated in the HBT process flow.

Epitaxial growth of Si1-x-yGexCy layers for base layerapplications in bipolar transistors has been investigated indetail. The optimization of the growth parameters has beenperformed in order to incorporate carbon substitutionally inthe SiGe matrix without increasing the defect density in theepitaxial layers.

The thermal stability of npn SiGe-based heterojunctionstructures has been investigated. The influence of thediffusion of dopants in SiGe or in adjacent layers on thethermal stability of the structure has also been discussed.

SiGeC-based transistors with both non-selectively depositedcollector and selectively grown collector have been fabricatedand electrically characterized. The fabricated transistorsexhibit electrostatic current gain values in the range of 1000-2000. The cut-off frequency and maximum oscillation frequencyvary from 40-80 GHz and 15-30 GHz, respectively, depending onthe lateral design. The leakage current was investigated usinga selectively deposited collector design and possible causesfor leakage has been discussed. Solutions for decreasing thejunction leakage are proposed.

Key words:Silicon-Germanium-Carbon (SiGeC),Heterojunction bipolar transistor (HBT), chemical vapordeposition (CVD), selective epitaxy, non-selective epitaxy,collector design, high-frequency measurement, dopantsegregation, thermal stability.

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Pratapgarhwala, Mustansir M. "Characterization of Transistor Matching in Silicon-Germanium Heterojunction Bipolar Transistors." Thesis, Georgia Institute of Technology, 2005. http://hdl.handle.net/1853/7536.

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Transistor mismatch is a crucial design issue in high precision analog circuits, and is investigated here for the first time in SiGe HBTs. The goal of this work is to study the effects of mismatch under extreme conditions including radiation, high temperature, and low temperature. One portion of this work reports collector current mismatch data as a function of emitter geometry both before and after 63 MeV proton exposure for first-generation SiGe HBTs with a peak cut-off frequency of 60 GHz. However, minimal changes in device-to-device mismatch after radiation exposure were experienced. Another part of the study involved measuring similar devices at different temperatures ranging from 298K to 377K. As a general trend, it was observed that device-to-device mismatch improved with increasing temperature.

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Lemna, Boyd. "GaInP/GaAs heterojunction bipolar transistor, empirical investigation at 29 GHz." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1997. http://www.collectionscanada.ca/obj/s4/f2/dsk2/ftp04/mq22773.pdf.

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Yee, Mun Chun Marcus. "High current and voltage effects in heterojunction bipolar transistor collectors." Thesis, University of Sheffield, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.269460.

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Helme, John Peter. "Analytical charge control modelling of the speed response of heterojunction bipolar phototransistor and PIN-diode/heterojunction bipolar transistor photoreceivers." Thesis, University of Sheffield, 2005. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.425610.

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Pagette, Francois Carleton University Dissertation Engineering Electronics. "Implementation of a double-poly bipolar transistor technology." Ottawa, 1994.

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Guetre, Eric R. (Eric Rene) Carleton University Dissertation Engineering Electronics. "An Efficient Ka-band MMIC upconverter using a heterojunction bipolar transistor." Ottawa, 1997.

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Lee, Yi-Che. "Development of III-nitride transistors: heterojunction bipolar transistors and field-effect transistors." Diss., Georgia Institute of Technology, 2014. http://hdl.handle.net/1853/53472.

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The fabrication processes development for on III-nitride (III-N) heterojunction bipolar transistors (HBTs), heterojunction field-effect transistors (HFETs) and metal-insulator-semiconductor field-effect transistors (MISFETs) were performed. D.c, microwave and quasi-static I-V and C-V measurements were carried out to characterize the fabricated III-N transistors and diodes. The GaN/InGaN direct-growth HBTs (DG-HBTs) grown on free-standing GaN (FS-GaN) substrates demonstrated a high current gain (hfe) > 110, high current density (JC) > 141 kA/cm2, and high power density (Pdc) > 3 MW/cm2. The first III-N DG-HBT showing fT > 8 GHz and fmax > 1.3 GHz were also demonstrated on sapphire substrates. Recessed-gate AlGaN/AlN/GaN HFETs demonstrated Vth = 0 V with 0.17 V deviation across the sample. Baliga's figure of merit is 240 MW/cm2 was achieved. Current collapse was eliminated and the dynamic on-resistance was reduced by 67% after using a remote-oxygen-plasma treatment. Normally-off recessed-gate AlGaN/AlN/GaN MISFETs with Vth = 0.9 V were also fabricated with the remote-oxygen-plasma treatment. Low leakage current (< 1 pA/mm), high on-off ratio (> 2.2E11) are achieved. These achievements suggest that high-performance III-N transistors are very promising for high-power switching and microwave amplification. Findings concerning remaining process issues and implications for future research are also discussed.

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Amin, Farid Ahmed. "Design, characterisation and reliability of ohmic contacts for HBT applications." Thesis, King's College London (University of London), 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.251977.

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32

Stein, Félix. "SPICE Modeling of TeraHertz Heterojunction bipolar transistors." Thesis, Bordeaux, 2014. http://www.theses.fr/2014BORD0281/document.

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Les études qui seront présentées dans le cadre de cette thèse portent sur le développement et l’optimisation des techniques pour la modélisation compacte des transistors bipolaires à hétérojonction (TBH). Ce type de modélisation est à la base du développement des bibliothèques de composants qu’utilisent les concepteurs lors de la phase de simulation des circuits intégrés. Le but d’une technologie BiCMOS est de pouvoir combiner deux procédés technologiques différents sur une seule et même puce. En plus de limiter le nombre de composants externes, cela permet également une meilleure gestion de la consommation dans les différents blocs digitaux, analogiques et RF. Les applications dites rapides peuvent ainsi profiter du meilleur des composants bipolaires et des transistors CMOS. Le défi est d’autant plus critique dans le cas des applications analogiques/RF puisqu’il est nécessaire de diminuer la puissance consommée tout en maintenant des fréquences de fonctionnement des transistors très élevées. Disposer de modèles compacts précis des transistors utilisés est donc primordial lors de la conception des circuits utilisés pour les applications analogiques et mixtes. Cette précision implique une étude sur un large domaine de tensions d’utilisation et de températures de fonctionnement. De plus, en allant vers des nœuds technologiques de plus en plus avancés, des nouveaux effets physiques se manifestent et doivent être pris en compte dans les équations du modèle. Les règles d’échelle des technologies plus matures doivent ainsi être réexaminées en se basant sur la physique du dispositif. Cette thèse a pour but d’évaluer la faisabilité d’une offre de modèle compact dédiée à la technologie avancée SiGe TBH de chez ST Microelectronics. Le modèle du transistor bipolaire SiGe TBH est présenté en se basant sur le modèle compact récent HICUMversion L2.3x. Grâce aux lois d’échelle introduites et basées sur le dessin même des dimensions du transistor, une simulation précise du comportement électrique et thermique a pu être démontrée.Ceci a été rendu possible grâce à l’utilisation et à l’amélioration des routines et méthodes d’extraction des paramètres du modèle. C’est particulièrement le cas pour la détermination des éléments parasites extrinsèques (résistances et capacités) ainsi que celle du transistor intrinsèque. Finalement, les différentes étapes d’extraction et les méthodes sont présentées, et ont été vérifiées par l’extraction de bibliothèques SPICE sur le TBH NPN Haute-Vitesse de la technologie BiCMOS avancée du noeud 55nm, avec des fréquences de fonctionnement atteignant 320/370GHz de fT = fmax
The aim of BiCMOS technology is to combine two different process technologies intoa single chip, reducing the number of external components and optimizing power consumptionfor RF, analog and digital parts in one single package. Given the respectivestrengths of HBT and CMOS devices, especially high speed applications benefit fromadvanced BiCMOS processes, that integrate two different technologies.For analog mixed-signal RF and microwave circuitry, the push towards lower powerand higher speed imposes requirements and presents challenges not faced by digitalcircuit designs. Accurate compact device models, predicting device behaviour undera variety of bias as well as ambient temperatures, are crucial for the development oflarge scale circuits and create advanced designs with first-pass success.As technology advances, these models have to cover an increasing number of physicaleffects and model equations have to be continuously re-evaluated and adapted. Likewiseprocess scaling has to be verified and reflected by scaling laws, which are closelyrelated to device physics.This thesis examines the suitability of the model formulation for applicability to production-ready SiGe HBT processes. A derivation of the most recent model formulationimplemented in HICUM version L2.3x, is followed by simulation studies, whichconfirm their agreement with electrical characteristics of high-speed devices. Thefundamental geometry scaling laws, as implemented in the custom-developed modellibrary, are described in detail with a strong link to the specific device architecture.In order to correctly determine the respective model parameters, newly developed andexisting extraction routines have been exercised with recent HBT technology generationsand benchmarked by means of numerical device simulation, where applicable.Especially the extraction of extrinsic elements such as series resistances and parasiticcapacitances were improved along with the substrate network.The extraction steps and methods required to obtain a fully scalable model library wereexercised and presented using measured data from a recent industry-leading 55nmSiGe BiCMOS process, reaching switching speeds in excess of 300GHz. Finally theextracted model card was verified for the respective technology

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Ahmed, Adnan. "Study of Low-Temperature Effects in Silicon-Germanium Heterojunction Bipolar Transistor Technology." Thesis, Georgia Institute of Technology, 2005. http://hdl.handle.net/1853/7227.

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This thesis investigates the effects of low temperatures on Silicon Germanium (SiGe) Hterojunction Bipolar Transistors (HBT) BiCMOS technology. A comprehensive set of dc measurements were taken on first, second, third and fourth generation IBM SiGe technology over a range of temperatures (room temperature to 43K for first generation, and room temperature to 15K for the rest). This work is unique in the sense that this sort of comprehensive study of dc characteristics on four SiGe HBT technology generations over a wide range of temperatures has never been done before to the best of the authors knowledge.

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Roberts, Victoria. "The growth and characterisation of silicon alloys for heterojunction bipolar transistor applications." Thesis, University of York, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.259846.

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Iqbal, Ahmer. "Heterojunction bipolar transistor based distributed amplifiers for fibre optic receiver front-end applications." Thesis, University of Manchester, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.734182.

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Oka, Tohru. "Novel GaAs Heterojunction Bipolar Transistor Technologies for High-Speed and Low-Power Applications." 京都大学 (Kyoto University), 2003. http://hdl.handle.net/2433/148898.

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Lidsky, David. "Design, Fabrication and Characterization of a GaAs/InxGa1-xAs/GaAs Heterojunction Bipolar Transistor." Thesis, Virginia Tech, 2014. http://hdl.handle.net/10919/52591.

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Designs for PnP GaAs/InxGa1-xAs/GaAs heterojunction bipolar transistors (HBTs) are proposed and simulated with the aid of commercial software. Band diagrams, Gummel plots and common emitter characteristics are shown for the specific case of x=1, x=0.7, and x linearly graded from 0.75 to 0.7. Of the three designs, it is found that the linearly graded case has the lowest leakage current and the highest current gain. IV curves for all four possible classes of InAs/GaAs heterojunction (nN, nP, pN, pP) are calculated. A pN heterojunction is fabricated and characterized. In spite of the 7% lattice mismatch between InAs and GaAs, the diode has an ideality factor of 1.26 over three decades in the forward direction. In the reverse direction, the leakage current grows exponentially with the magnitude of the bias, and shows an effective ideality factor of 3.17, in stark disagreement with simulation. IV curves are taken over a temperature range of 105 K to 405 and activation energies are extracted. For benchmarking the device processing and the characterization apparatus, a conventional GaAs homojunction diode was fabricated and characterized, showing current rectification ratio of 109 between plus one volt and minus one volt. Because the PnP material for the optimal HBT design was not available, an Npn GaAs/InAs/InAs HBT structure was processed, characterized, and analyzed. The Npn device fails in both theory and in practice; however, by making a real structure, valuable lessons were learned for crystal growth, mask design, processing, and metal contacts.
Master of Science

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Laneve, Tony Carleton University Dissertation Engineering Electronics. "Empirical modeling of a GaAs/A1GaAs heterojunction bipolar transistor for microwave circuit applications." Ottawa, 1995.

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Shah, Alam Huhmmad. "RF modelling of deep-submicron CMOS and heterojunction bipolar transistor for wireless communication systems." Thesis, Queen's University Belfast, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.269173.

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Konistis, Konstantinos 1973. "A heterojunction bipolar transistor with stepwise allog-graded base : analysis, design, fabrication, and characterization." Thesis, Massachusetts Institute of Technology, 2004. http://hdl.handle.net/1721.1/28712.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2004.
Includes bibliographical references (p. 117-126).
(cont.) features but the device self-heating turned out to be crucial for the longevity of the base micro-airbridges. The short lifetime of the base micro-airbridges was prohibitive for the realization of high frequency measurements. This work serves as the foundation for the implementation of robust HBT transit-time oscillators with the incorporation of slight modifications in the fabrication process.
This thesis explores the potential benefits of a GaAs-based heterojunction bipolar transistor (HBT) with stepwise alloy-graded base. The step height is slightly greater than the longitidinal optical (LO) phonon energy h[omega]LO in order to facilitate LO-phonon-enhanced forward diffusion of minority carriers in the base. The intuitive theoretical approach of carrier transport in the base, as proposed by other workers for this type of alloy-grading, did not incorporate in detail the various mechanisms of transport. In this work, we solved the Botzmann transport equation (BTE) in one dimension across the base for arbritrary frequencies. Impurity and LO phonon scattering were considered as the dominant scattering mechanisms. The intrinsic and extrinsic elements were combined and a small-signal equivalent circuit was proposed for the evaluation of the high-frequency performance of the device. The unique feature of this HBT is that the base transport factor undergoes a moderate magnitude attenuation and phase delay. By choosing a suitable collector delay, a band-limited negative output resistance can emerge in the microwave/millimeter-wave regime. The main benefit of the device is its inherent property as a transit-time high-frequency oscillator. Using our device simulator, we selected the material parameters for epitaxial growth (MBE) of the device wafer and we investigated various device layouts. We implemented the complete microfabrication of 2 [micro]m x 15 [micro]m, self-aligned, emitter-up HBTs with micro-airbridges for device isolation purposes. We performed DC measurements of various devices and they provided us with feedback for modifications in the MBE design and growth conditions of the device wafer. We finally fabricated HBTs with favorable DC
by Konstantinos Konistis.
Ph.D.

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Lebby, M. S. "Fabrication and characterisation of the Heterojunction field effect transistor (HFET) and the bipolar inversion channel field effect transistor (BIFCET)." Thesis, University of Bradford, 1987. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.379863.

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Rubio, Robert Dale. "The design, simulation and analysis of InP double heterojunction transistor for power amplifiers." Diss., Restricted to subscribing institutions, 2009. http://proquest.umi.com/pqdweb?did=1779690361&sid=2&Fmt=2&clientId=48051&RQT=309&VName=PQD.

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Bellini, Marco. "Operation of silicon-germanium heterojunction bipolar transistors on." Diss., Atlanta, Ga. : Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/28206.

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Thesis (M. S.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2009.
Committee Chair: Cressler, John D.; Committee Member: Papapolymerou, John; Committee Member: Ralph, Stephen; Committee Member: Shen, Shyh-Chiang; Committee Member: Zhou, Hao Min.

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Liu, Xiang. "Reliability study of InGaP/GaAs heterojunction bipolar transistor MMIC technology by characterization, modeling and simulation." Doctoral diss., University of Central Florida, 2011. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/4967.

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HBT-based MMIC performance is very sensitive to the variation of core device characteristics and the reliability issues put the limit on its radio frequency (RF) behaviors. While many researchers have reported the observed stress-induced degradations of GaAs HBT characteristics, there has been little published data on the full understanding of stress impact on the GaAs HBT-based MMICs. If care is not taken to understand this issue, stress-induced degradation paths can lead to built-in circuit failure during regular operations. However, detection of this failure may be difficult due to the circuit complexity and lead to erroneous data or output conditions. Thus, a practical and analytical methodology has been developed to predict the stress impacts on HBT-based MMICs. It provides a quick way and guidance for the RF design engineer to evaluate the circuit performance with reliability considerations. Using the present existing EDA tools (Cadance SpectreRF and Agilent ADS) with the extracted pre- and post-stress transistor models, the electrothermal stress effects on InGaP/GaAs HBT-based RF building blocks including power amplifier (PA), low-noise amplifier (LNA) and oscillator have been systematically evaluated. This provides a potential way for the RF/microwave industry to save tens of millions of dollars annually in testing costs. The world now stands at the threshold of the age of advanced GaAs HBT MMIC technology and researchers have been exploring here for years. The reliability of GaAs HBT technology is no longer the post-design evaluation, but the pre-design consideration. The successful and fruitful results of this dissertation provide methods and guidance for the RF designers to achieve more reliable RF circuits with advanced GaAs HBT technology in the future.; Recent years have shown real advances of microwave monolithic integrated circuits (MMICs) for millimeter-wave frequency systems, such as wireless communication, advanced imaging, remote sensing and automotive radar systems, as MMICs can provide the size, weight and performance required for these systems. Traditionally, GaAs pseudomorphic high electron mobility transistor (pHEMT) or InP based MMIC technology has dominated in millimeter-wave frequency applications because of their high fsubscript T] and fsubscript max] as well as their superior noise performance. But these technologies are very expensive. Thus, for low cost and high performance applications, InGaP/GaAs heterojunction bipolar transistors (HBTs) are quickly becoming the preferred technology to be used due to their inherently excellent characteristics. These features, together with the need for only one power supply to bias the device, make InGaP/GaAs HBTs very attractive for the design of high performance fully integrated MMICs. With the smaller dimensions for improving speed and functionality of InGaP/GaAs HBTs, which dissipate large amount of power and result in heat flux accumulated in the device junction, technology reliability issues are the first concern for the commercialization. As the thermally triggered instabilities often seen in InGaP/GaAs HBTs, a carefully derived technique to define the stress conditions of accelerated life test has been employed in our study to acquire post-stress device characteristics for the projection of long-term device performance degradation pattern. To identify the possible origins of the post-stress device behaviors observed experimentally, a two dimensional (2-D) TCAD numerical device simulation has been carried out. Using this approach, it is suggested that the acceptor-type trapping states located in the emitter bulk are responsible for the commonly seen post-stress base current instability over the moderate base-emitter voltage region.
ID: 030423028; System requirements: World Wide Web browser and PDF reader.; Mode of access: World Wide Web.; Thesis (Ph.D.)--University of Central Florida, 2011.; Includes bibliographical references (p. 82-88).
Ph.D.
Doctorate
Electrical Engineering and Computer Science
Engineering and Computer Science

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Xu, Ziyan Niu Guofu. "Low temperature modeling of I-V characteristics and RF small signal parameters of SiGe HBTs." Auburn, Ala., 2009. http://hdl.handle.net/10415/1925.

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VUMMIDI, MURALI KRISHNA PRASAD. "Thermionic Emission Diffusion Model of InP-based Pnp Heterojunction Bipolar Transistor with Non-Uniform Base Doping." University of Cincinnati / OhioLINK, 2003. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1060110500.

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Malm, B. Gunnar. "High Frequency Characterization and Modeling of SiGe Heterojunction Bipolar Transistors." Doctoral thesis, KTH, Microelectronics and Information Technology, IMIT, 2002. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3324.

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Miyake, Hiroki. "Interface Control of AlGaN/SiC Heterojunction and Development of High-Current-Gain SiC-Based Bipolar Transistors." 京都大学 (Kyoto University), 2012. http://hdl.handle.net/2433/157593.

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Lee, Edwin Wendell II. "Growth and Nb-doping of MoS2 towards novel 2D/3D heterojunction bipolar transistors." The Ohio State University, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=osu1480686917234143.

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Wang, Wei-Chou, and 王偉州. "Investigation of Double Delta-Doped Heterojunction Bipolar Transistor." Thesis, 1998. http://ndltd.ncl.edu.tw/handle/87232646929972326322.

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碩士
國立成功大學
電機工程學系
86
The double heterojunction bipolar transistors (DHBT's) offer the promise for very high-speed and high-power integrated circuit applications. The predominantpurpose of this thesis is to investigate a lattice-matched In0.49Ga0.51As/GaAs/In0.49 Ga0.51As double delta-doped heterojunction bipolar transistor (D^3HBT) preparedby low-pressure metal organic chemical vapor deposition (LP-MOCVD). First, we realized the potential spikes and energy band diagrams of D^3HBT by solvingthe Poisson's equation, respectively. Moreover, the effects of delta-doped sheets at emitter-base (E-B) and base-collector (B-C) heterojunction will be discussed. Due tothe reduction of the potential spikes by inserting the delta-doped sheets and setback layers both at E-B and B-C heterojunctions, the electron blocking effect is removedand the dramatic improvement of current gain is obtained. Furthermore, a one-dimensional theoretical simulation is also employed to analyze the device performance. A ModifiedEbers-Moll model for both single and double heterojunction bipolar transistors with or without band spikes is developed. In addition, the carrier recombination within the quasi neutral base and space charge regions (SCRs) are taken into account duringthe simulation. We also clarify the discrepancy between theoretical and experimental results. We have successfully fabricated the double delta-doped heterojunction bipolar transistor(D^3HBT). The experimental results show that the common-emitter current gain over 210 atthe collector current of 35mA and an offset voltage smaller than 50mV are observed. Also, a lower knee-shaped voltage of 1.4V at the collector current of 40mA is observed due tothe significant elimination of the potential spike at B-C heterojunction. The base-collectorjunction breakdown voltage is about of 8V. Such excellent D.C. performances indeed improvethe drawbacks of conventional DHBT. From the simulation results, if the effective collectorarea is reduced to 100um^2, a good high-frequency performance of D^3HBT can be obtained.Consequently, the studied D^3HBT device provides a good promise for high-speed and high- power circuit applications.

Dissertations / Theses on the topic 'Double Heterojunction Bipolar Transistor'

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