Academic literature on the topic 'Double Heterojunction Bipolar Transistor'
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Journal articles on the topic "Double Heterojunction Bipolar Transistor":
Magno, R., J. B. Boos, P. M. Campbell, B. R. Bennett, E. R. Glaser, B. P. Tinkham, M. G. Ancona, K. D. Hobart, D. Park, and N. A. Papanicolaou. "InAlAsSb∕InGaSb double heterojunction bipolar transistor." Electronics Letters 41, no. 6 (2005): 370. http://dx.doi.org/10.1049/el:20058107.
Yan, B. P., C. C. Hsu, X. Q. Wang, and E. S. Yang. "InGaP∕GaAs0.94Sb0.06∕GaAs double heterojunction bipolar transistor." Electronics Letters 38, no. 6 (2002): 289. http://dx.doi.org/10.1049/el:20020201.
LIU, QINGMIN, SURAJIT SUTAR, and ALAN SEABAUGH. "TUNNEL DIODE/TRANSISTOR DIFFERENTIAL COMPARATOR." International Journal of High Speed Electronics and Systems 14, no. 03 (September 2004): 640–45. http://dx.doi.org/10.1142/s0129156404002600.
Chang, P. C., A. G. Baca, N. Y. Li, X. M. Xie, H. Q. Hou, and E. Armour. "InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor." Applied Physics Letters 76, no. 16 (April 17, 2000): 2262–64. http://dx.doi.org/10.1063/1.126315.
Coquillat, D., V. Nodjiadjim, S. Blin, A. Konczykowska, N. Dyakonova, C. Consejo, P. Nouvel, et al. "High-Speed Room Temperature Terahertz Detectors Based on InP Double Heterojunction Bipolar Transistors." International Journal of High Speed Electronics and Systems 25, no. 03n04 (September 2016): 1640011. http://dx.doi.org/10.1142/s0129156416400115.
Pelouard, J.-L., P. Hesto, and R. Castagné. "Monte-Carlo study of the double heterojunction bipolar transistor." Solid-State Electronics 31, no. 3-4 (March 1988): 333–36. http://dx.doi.org/10.1016/0038-1101(88)90289-4.
Lew, K. L., and S. F. Yoon. "Model for InGaP/GaAs/InGaP double heterojunction bipolar transistor." Journal of Applied Physics 89, no. 6 (March 15, 2001): 3464–68. http://dx.doi.org/10.1063/1.1343888.
Prinz, E. J., X. Xiao, P. V. Schwartz, and J. C. Sturm. "A novel double-base heterojunction bipolar transistor for low-temperature bipolar logic." IEEE Transactions on Electron Devices 39, no. 11 (1992): 2636–37. http://dx.doi.org/10.1109/16.163484.
Yamina, Berrichi, and Ghaffour Kherreddine. "Modelling Electronic Characteristic of InP/InGaAs Double Heterojunction Bipolar Transistor." International Journal of Electrical and Computer Engineering (IJECE) 5, no. 3 (June 1, 2015): 525. http://dx.doi.org/10.11591/ijece.v5i3.pp525-530.
Lee, Geonyeop, Stephen J. Pearton, Fan Ren, and Jihyun Kim. "Heterojunction Bipolar Transistor: 2D Material-Based Vertical Double Heterojunction Bipolar Transistors with High Current Amplification (Adv. Electron. Mater. 3/2019)." Advanced Electronic Materials 5, no. 3 (March 2019): 1970015. http://dx.doi.org/10.1002/aelm.201970015.
Dissertations / Theses on the topic "Double Heterojunction Bipolar Transistor":
Ang, Oon Sim. "Modeling of double heterojunction bipolar transistors." Thesis, University of British Columbia, 1990. http://hdl.handle.net/2429/29458.
Applied Science, Faculty of
Electrical and Computer Engineering, Department of
Graduate
BALARAMAN, PRADEEP ARUGUNAM. "DESIGN, SIMULATION AND MODELING OF InP/GaAsSb/InP DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS." University of Cincinnati / OhioLINK, 2003. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1069275786.
Flitcroft, Richard M. "Wide bandgap collector III-V double heterojunction bipolar transistors." Thesis, University of Sheffield, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.341875.
Schnyder, Iwan. "An indium-phosphide double-heterojunction bipolar transistor technology for 80 Gb/s integrated circuits /." Konstanz : Hartung-Gorre, 2005. http://www.loc.gov/catdir/toc/fy0610/2006356171.html.
Zhang, Yun. "Development of III-nitride bipolar devices: avalanche photodiodes, laser diodes, and double-heterojunction bipolar transistors." Diss., Georgia Institute of Technology, 2011. http://hdl.handle.net/1853/42703.
Lee, Tae-Woo. "An experimental and theoretical study of InGaP-GaAs double heterojunction bipolar transistors." Thesis, University of Sheffield, 1992. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.324090.
Balaraman, Pradeep A. "Design, simulation and modelling of InP/GaAsSb/InP double heterojunction bipolar transistors." Cincinnati, Ohio : University of Cincinnati, 2003. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=ucin1069275786.
Bauknecht, Raimond. "InP double heterojunction bipolar transistors for driver circuits in fiber optical communication systems /." [S.l.] : [s.n.], 1998. http://e-collection.ethbib.ethz.ch/show?type=diss&nr=12455.
Mohiuddin, Muhammad. "InGaAs/InA1As Double Heterojunction Bipolar transistors for high-speed, low-power digital applications." Thesis, University of Manchester, 2010. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.511942.
Schneider, Karl. "Broadband amplifiers for high data rates using InP, InGaAs double heterojunction bipolar transistors." Karlsruhe : Univ.-Verl. Karlsruhe, 2006. http://deposit.d-nb.de/cgi-bin/dokserv?idn=979772826.
Books on the topic "Double Heterojunction Bipolar Transistor":
Schnyder, Iwan. An indium-phosphide double-heterojunction bipolar transistor technology for 80 Gb/s integrated circuits. Konstanz: Hartung-Gorre Verlag, 2005.
Lam, Pui Leng. InGaAs-InAIAs N-P-N double heterojunction bipolar transistors grown by molecular beam epitaxy. Manchester: UMIST, 1995.
Hammer, Urs. Sub-micron InP/GaAsSb/InP double heterojunction bipolar transistors for ultra high-speed digital integrated circuits. Konstanz: Hartung-Gorre, 2010.
Chink, Hope Wuming. Emitter-up heterojunction bipolar transistor compatible laser. Ottawa: National Library of Canada, 1998.
Young, Stephen M. A superlattice emitter structure for a heterojunction bipolar transistor. Manchester: UMIST, 1993.
Xavier, Bernard Anthony. Analysis & modelling of gallium arsenide heterojunction bipolar transistor mixers. Uxbridge: Brunel University, 1993.
Lebby, Michael Stephen. Fabrication and characterisation of the heterojunction field effect transistor (HFET) and the bipolar inversion channel field effect transistor (BICFET): Characterisations of HFETs.... Bradford, 1987.
Book chapters on the topic "Double Heterojunction Bipolar Transistor":
Ramberg, L. P., P. M. Enquist, Y. K. Chen, F. E. Najjar, L. F. Eastman, E. A. Fitzgerald, and K. L. Kavanagh. "Lattice-Strained Double Heterojunction InGaAs/GaAs Bipolar Transistors." In High-Speed Electronics, 168–71. Berlin, Heidelberg: Springer Berlin Heidelberg, 1986. http://dx.doi.org/10.1007/978-3-642-82979-6_34.
Wei, C. J., H. C. Chung, Y. A. Tkachenko, and J. C. M. Hwang. "Capacitance Model of Microwave InP-Based Double Heterojunction Bipolar Transistors." In Simulation of Semiconductor Devices and Processes, 298–301. Vienna: Springer Vienna, 1995. http://dx.doi.org/10.1007/978-3-7091-6619-2_72.
Pelouard, J. L., P. Hesto, J. P. Praseuth, and L. Goldstein. "InGaAlAs/InGaAs/InGaAlAs NnpnN Double Heterojunction Bipolar Transistors: Experimental Characteristics and Monte-Carlo Interpretation." In High-Speed Electronics, 164–67. Berlin, Heidelberg: Springer Berlin Heidelberg, 1986. http://dx.doi.org/10.1007/978-3-642-82979-6_33.
Ahmad, Md Mufassal, Md Faiaad Rahman, and Tahmid Aziz Chowdhury. "Performance Analysis of MgF2-Si3N4 and MgF2-Ta2O5 Double-Layer Anti-reflection Coating on Heterojunction Bipolar Transistor Solar Cell." In Lecture Notes in Electrical Engineering, 285–94. Singapore: Springer Singapore, 2021. http://dx.doi.org/10.1007/978-981-16-1978-6_25.
Dubon-Chevallier, C., P. Desrousseaux, A. M. Duchenois, C. Besombes, J. Dangla, C. Bacot, and D. Ankri. "Emitter-Coupled Logic Ring Oscillators Implemented with GaAs/GaAlAs Single and Double Heterojunction Bipolar Transistors: A Comparison." In High-Speed Electronics, 151–55. Berlin, Heidelberg: Springer Berlin Heidelberg, 1986. http://dx.doi.org/10.1007/978-3-642-82979-6_30.
Cressler, John D. "Silicon-Germanium Heterojunction Bipolar Transistor." In Device and Circuit Cryogenic Operation for Low Temperature Electronics, 69–84. Boston, MA: Springer US, 2001. http://dx.doi.org/10.1007/978-1-4757-3318-1_4.
Su, L. M., N. Grote, P. Schumacher, and D. Franke. "Implanted-collector InGaAsP/InP Heterojunction Bipolar Transistor." In ESSDERC ’89, 275–78. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-52314-4_57.
Das, Arnima, Maitreyi Ray Kanjilal, and Payel Biswas. "Frequency Response of Si/SiGe Heterojunction Bipolar Transistor." In Computational Advancement in Communication Circuits and Systems, 339–44. New Delhi: Springer India, 2015. http://dx.doi.org/10.1007/978-81-322-2274-3_37.
Asbeck, P. M. "Heterojunction Bipolar Transistor Technology for High-Speed Integrated Circuits." In Picosecond Electronics and Optoelectronics, 32–37. Berlin, Heidelberg: Springer Berlin Heidelberg, 1985. http://dx.doi.org/10.1007/978-3-642-70780-3_5.
Teeter, Douglas A., Jack R. East, Richard K. Mains, and George I. Haddad. "A Numerical Large Signal Model for the Heterojunction Bipolar Transistor." In Computational Electronics, 43–46. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4757-2124-9_7.
Conference papers on the topic "Double Heterojunction Bipolar Transistor":
Yu-Qiu Chen and Shiou-Ying Cheng. "An InP/InGaAs double heterojunction bipolar transistor." In 2014 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC). IEEE, 2014. http://dx.doi.org/10.1109/edssc.2014.7061115.
Diouf, I., P. Nouvel, L. Varani, A. Penarier, N. Diakonova, D. Coquillat, V. Nodjiadjim, et al. "Double-Heterojunction Bipolar Transistor as THz Detector for Communications." In 2021 46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz). IEEE, 2021. http://dx.doi.org/10.1109/irmmw-thz50926.2021.9566983.
Coquillat, D., V. Nodjiadjim, A. Konczykowska, M. Riet, N. Dyakonova, C. Consejo, F. Teppe, J. Godin, and W. Knap. "InP double heterojunction bipolar transistor as sub-terahertz detector." In 2014 39th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz). IEEE, 2014. http://dx.doi.org/10.1109/irmmw-thz.2014.6956515.
Liu, Min, Yuming Zhang, Hongliang Lu, Yimen Zhang, Jincan Zhang, Chenghuan Li, Wei Zhou, and Lifan Wu. "Geometrical scaling effects in InP/InGaAs double heterojunction bipolar transistor." In 2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT). IEEE, 2014. http://dx.doi.org/10.1109/icsict.2014.7021230.
Coquillat, D., V. Nodjiadjim, A. Konczykowska, N. Dyakonova, C. Consejo, S. Ruffenach, F. Teppe, et al. "InP double heterojunction bipolar transistor for detection above 1 THz." In 2015 40th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz). IEEE, 2015. http://dx.doi.org/10.1109/irmmw-thz.2015.7327777.
Arabhavi, Akshay Mahadev, Sara Hamzeloui, Filippo Ciabattini, Olivier Ostinelli, and Colombo R. Bolognesi. "Terahertz InP/GaAsSb Double Heterojunction Bipolar Transistors." In 2022 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2022. http://dx.doi.org/10.7567/ssdm.2022.j-3-01.
Bolognesi, C. R., A. M. Arabhavi, W. Quan, O. Ostinelli, X. Wen, and M. Luisier. "Advances in InP Double Heterojunction Bipolar Transistors." In 2018 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2018. http://dx.doi.org/10.7567/ssdm.2018.d-5-01.
Okada, Y., K. Tada, R. J. Simes, L. A. Coldren, and J. L. Merz. "GaAs/AlGaAs Double-Heterojunction Bipolar Transistor Carrier-Injected Optical Intensity Modulator." In 1989 Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1989. http://dx.doi.org/10.7567/ssdm.1989.s-c-6.
HIDAKA, Osamu, Kouhei MORIZUKA, and Hiroshi MOCHIZUKI. "Thermal Runaway Tolerance in Double Heterojunction Bipolar Transistors." In 1994 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1994. http://dx.doi.org/10.7567/ssdm.1994.d-2-3.
Zhou, Xingbao, Shouli Zhou, Hao Wen, Hongliang Ren, Guiyong Huang, Jun Xu, and Yuhua Wang. "Simulation of electrical characteristics of InP/In0.24Ga0.76As0.73Sb0.27/In0.53Ga0.47As double heterojunction bipolar transistor." In 2014 IEEE 9th Conference on Industrial Electronics and Applications (ICIEA). IEEE, 2014. http://dx.doi.org/10.1109/iciea.2014.6931447.
Reports on the topic "Double Heterojunction Bipolar Transistor":
Rodwell, Mark, M. Urtega, D. Scott, M. Dahlstrom, and Y. Betser. Ultra High Speed Heterojunction Bipolar Transistor Technology. Fort Belvoir, VA: Defense Technical Information Center, January 2000. http://dx.doi.org/10.21236/ada413790.
Miller, D. L., and P. M. Asbeck. Fundamental Aspects of Heterojunction Bipolar Transistor Technology. Fort Belvoir, VA: Defense Technical Information Center, July 1986. http://dx.doi.org/10.21236/ada171225.
Gillespie, James K. AFRL/GaAsTek Heterojunction Bipolar Transistor (HBT) Process Development. Fort Belvoir, VA: Defense Technical Information Center, October 2001. http://dx.doi.org/10.21236/ada415646.
Patrizi, G. A., M. L. Lovejoy, R. P. Jr Schneider, H. Q. Hou, and P. M. Enquist. Multi-level interconnects for heterojunction bipolar transistor integrated circuit technologies. Office of Scientific and Technical Information (OSTI), December 1995. http://dx.doi.org/10.2172/212553.
Long, Stephen I., Herbert Kroemer, and M. A. Rao. Development of a Planar Heterojunction Bipolar Transistor for Very High Speed Logic. Fort Belvoir, VA: Defense Technical Information Center, October 1986. http://dx.doi.org/10.21236/ada174580.
Mitchell, Gregory A. The Role of the Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) in Mobile Technology Platforms. Fort Belvoir, VA: Defense Technical Information Center, September 2011. http://dx.doi.org/10.21236/ada552934.