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Journal articles on the topic 'Doping Effects'

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Published: 6 September 2023

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1

Elmar qızı Şahbazlı, Nəzrin. "Prohibited doping substances and methods, their definition. Doping control procedure." SCIENTIFIC WORK 65, no. 04 (April 21, 2021): 147–50. http://dx.doi.org/10.36719/2663-4619/65/147-150.

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Doping by humans, both in competitions and on a daily basis, remains a major health problem in modern times. There are many growing body of evidences on the negative health effects of using doping. Doping-is the use of substances that will artificially increase their performance and harm the physical and psychological health of the athlete during a race or in preparation for a game. Worldwide doping controls are carried out in accordance with the Code and the International Standard for Testing (IST). Athletes who compete at the international and national level may be tested anytime, anywhere. Specially trained and accredited doping control personnel carry out all tests. The doping control procedure is clearly defined for all anti-doping organizations in the World Anti-Doping Agency (WADA) International Standard for Testing and Investigations (ISTI). Key words: doping substances, sports, harmful substance, fairplay, health, control of doping, methods of doping

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2

Md. Ziaul Amin, Md Ziaul Amin, Khurram Karim Qureshi Khurram Karim Qureshi, and Md Mahbub Hossain Md. Mahbub Hossain. "Doping radius effects on an erbium-doped fiber amplifier." Chinese Optics Letters 17, no. 1 (2019): 010602. http://dx.doi.org/10.3788/col201917.010602.

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3

Yu, Fucheng, Hailong Hu, Bolong Wang, Haishan Li, Tianyun Song, Boyu Xu, Ling He, Shu Wang, and Hongyan Duan. "Effects of Al doping on defect behaviors of ZnO thin film as a photocatalyst." Materials Science-Poland 37, no. 3 (September 1, 2019): 437–45. http://dx.doi.org/10.2478/msp-2019-0050.

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AbstractAl doped ZnO (AZO) thin films were prepared on silica substrates by sol-gel method. The films showed a hexagonal wurtzite structure with a preferred orientation along c-axis. Suitable Al doping dramatically improved the crystal quality compared to the undoped ZnO films. Dependent on the Al dopant concentration, the diffraction peak of (0 0 2) plane in XRD spectra showed at first right-shifting and then left-shifting, which was attributed to the change in defect concentration induced by the Al dopant. Photocatalytic properties of the AZO film were characterized by degradation of methyl orange (MO) under simulated solar light. The transmittance of the films was enhanced by the Al doping, and the maximum transmittance of 80 % in the visible region was observed in the sample with Al concentration of 1.5 at.% (mole fraction). The film with 1.5 at.% Al doping achieved also maximum photocatalytic activity of 68.6 % under solar light. The changes in the film parameters can be attributed to the variation in defect concentration induced by different Al doping content.

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4

Li, Dan, Wei-Qing Huang, Zhong Xie, Liang Xu, Yin-Cai Yang, Wangyu Hu, and Gui-Fang Huang. "Mechanism of enhanced photocatalytic activities on tungsten trioxide doped with sulfur: Dopant-type effects." Modern Physics Letters B 30, no. 27 (October 10, 2016): 1650340. http://dx.doi.org/10.1142/s0217984916503401.

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The enhanced photocatalytic activity of tungsten trioxide (WO3) has been observed experimentally via doping with S element as different dopant types. Herein, a comparative study on the effect of different types of S dopant and native vacancy defects on the electronic structure and optical properties of WO3 is presented by using hybrid Heyd–Scuseria–Ernzerhof 2006 (HSE06) density functional methods. Six possible models (S[Formula: see text]–WO3, S[Formula: see text]–WO3, V[Formula: see text]–WO3, V[Formula: see text]–WO3, S[Formula: see text] + V[Formula: see text]–WO3 and S[Formula: see text] + V[Formula: see text]–WO3) based on WO3 are tentatively put forward. It is found that cationic S doping (the substitution of W by S) is more favorable than anionic S doping (replacing O with S), and both cases become easier to form as native vacancy defect is accompanied. The electronic structures of doped WO3 depend on the type of dopant: anionic S doping results into three isolated levels in the upper part of valence band, while cationic S doping only induces an effective band gap reduction, which is critical for efficient light-to-current conversion. Interestingly, the isolated states near gap of WO3 would appear as long as native vacancy defects exist. The introduced levels or reduced band gaps make the systems responsed to the visible light, even further to a range of 400–700 nm. These findings can rationalize the available experimental results and pave the way for developing WO3-based photocatalysts.

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5

Heiblum, M. "Doping effects in AlGaAs." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 3, no. 3 (May 1985): 820. http://dx.doi.org/10.1116/1.583110.

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6

Geibel, C., C. Schank, F. Jährling, B. Buschinger, A. Grauel, T. Lühmann, P. Gegenwart, R. Helfrich, P. H. P. Reinders, and F. Steglich. "Doping effects on UPd2Al3." Physica B: Condensed Matter 199-200 (April 1994): 128–31. http://dx.doi.org/10.1016/0921-4526(94)91757-4.

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7

Weiden, M., W. Richter, C. Geibel, F. Steglich, P. Lemmens, B. Eisener, M. Brinkmann, and G. Güntherodt. "Doping effects in CuGeO3." Physica B: Condensed Matter 225, no. 3-4 (July 1996): 177–90. http://dx.doi.org/10.1016/0921-4526(96)86773-1.

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8

Wang, Zhi Yong. "The Effects of Heteroatom-Doping in Stone-Wales Defects on the Electronic Properties of Graphene Nanoribbons." Advanced Materials Research 463-464 (February 2012): 793–97. http://dx.doi.org/10.4028/www.scientific.net/amr.463-464.793.

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The effects of boron(nitrogen/silicon)-dopant in Stone-Wales defects on electronic properties of graphene nanoribbons are investigated by using density functional theory. It is shown that the geometry structures and band structures have changed distinctly for these complex configurations. Interestingly for the dopant site 1, the distortions of boron/silicon-doping configurations are larger than that of the nitrogen-doping configurations, which affects the band structures of these configurations. The theoretical results may be valuable for the design of electronic devices.

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9

Wei, Yin, Hongjie Wang, Xuefeng Lu, Xingyu Fan, and Heng Wei. "Effects of element doping on electronic structures and optical properties in cubic boron nitride from first-principles." Modern Physics Letters B 31, no. 16 (June 2017): 1750166. http://dx.doi.org/10.1142/s0217984917501664.

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Attractive potential applications of cubic boron nitride (c-BN) derive from the properties of semiconductors, widely used in optoelectronic and microelectronic devices. In this paper, the effects of element doping on the electronic structures and optical properties in cubic boron nitride are investigated. The Al- and Ga-doped systems have the lower bonding energies of −11.544 eV and −5.302 eV, respectively, indicating better stability. Difference charge density maps demonstrate that the electron loss increases after P doping and decreases after Al, Ga and As dopings, indicating that the covalent character of polar covalent bonds decreases by doping in the range of P, Al, Ga and As, which is in accordance with the calculated atom population values. The Al- and Ga-doped systems show lower dielectric loss, absorption and reflectivity in the lower energy region, displaying the “transparent-type” characteristic and their potential applications in electron devices.

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10

Mohtar, Safia Syazana, Farhana Aziz, Ahmad Fauzi Ismail, Nonni Soraya Sambudi, Hamidah Abdullah, Ahmad Nazrul Rosli, and Bunsho Ohtani. "Impact of Doping and Additive Applications on Photocatalyst Textural Properties in Removing Organic Pollutants: A Review." Catalysts 11, no. 10 (September 26, 2021): 1160. http://dx.doi.org/10.3390/catal11101160.

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The effect of ion doping and the incorporation of additives on photocatalysts’ textural properties have been reviewed. Generally, it can be summarised that ion doping and additives have beneficial effects on photocatalytic efficiency and not all have an increase in the surface area. The excessive amount of dopants and additives will produce larger aggregated particles and also cover the mesoporous structures, thereby increasing the pore size (Pd) and pore volume (Pv). An excessive amount of dopants also leads to visible light shielding effects, thus influence photocatalytic performance. Ion doping also shows some increment in the surface areas, but it has been identified that synergistic effects of the surface area, porosity, and dopant amount contribute to the photocatalytic performance. It is therefore important to understand the effect of doping and the application of additives on the textural properties of photocatalysts, thus, their performance. This review will provide an insight into the development of photocatalyst with better performance for wastewater treatment applications.

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11

Chen, Hungru, and Naoto Umezawa. "Sensitization of Perovskite Strontium Stannate SrSnO3towards Visible-Light Absorption by Doping." International Journal of Photoenergy 2014 (2014): 1–3. http://dx.doi.org/10.1155/2014/643532.

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Perovskite strontium stannate SrSnO3is a promising photocatalyst. However, its band gap is too large for efficient solar energy conversion. In order to sensitize SrSnO3toward visible-light activities, the effects of doping with various selected cations and anions are investigated by using hybrid density functional calculations. Results show that doping can result in dopant level to conduction band transitions which lie lower in energy compared to the original band gap transition. Therefore, it is expected that doping SrSnO3can induce visible-light absorption.

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12

Singh, Bhavana, S. B. Shrivastava, and V. Ganesan. "Effects of Mn Doping on Zinc Oxide Films Prepared by Spray Pyrolysis Technique." International Journal of Nanoscience 16, no. 01 (February 2017): 1650024. http://dx.doi.org/10.1142/s0219581x16500241.

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The work deals with the preparation of Zinc Oxide (ZnO) thin films on microscopic glass substrate by spray pyrolysis technique. The systematic study on the influence of Mn doping up to 15% has been performed. The structural studies revealed that pure and doped film has hexagonal structure. In order to reduce the internal strain due to Mn doping, the crystallite size decreases. The atomic force microscopy (AFM) measurement shows the decrease in grain size and roughness with doping. The resistivity curve shows a clear hump corresponding to smaller Mn doping ([Formula: see text]) around [Formula: see text]. This hump was found to reduce with the increase in Mn concentration and for [Formula: see text], beyond which it vanishes completely. This is attributed to critical behavior of resistivity and may be due to the scattering of carriers by magnetic spin fluctuation via exchange interaction. The optical measurement shows the shift in absorption edge of Mn doped ZnO films toward the longer wavelength side. This correlates the reduction in grain size as a function of Mn concentration. The optical bandgap goes down, whereas refractive index increases with dopant concentration.

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13

Moritomo, Y., Sh Xu, T. Akimoto, A. Machida, N. Hamada, K. Ohoyama, E. Nishibori, M. Takata, and M. Sakata. "Electron doping effects in conductingSr2FeMoO6." Physical Review B 62, no. 21 (December 1, 2000): 14224–28. http://dx.doi.org/10.1103/physrevb.62.14224.

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14

Sun, Young, Xiaojun Xu, and Yuheng Zhang. "Effects of Fe doping inLa0.67Sr0.33CoO3." Physical Review B 62, no. 9 (September 1, 2000): 5289–92. http://dx.doi.org/10.1103/physrevb.62.5289.

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15

Kim, W. W., and G. R. Stewart. "Effects of hydrogen doping onUPd2Al3." Physical Review B 50, no. 14 (October 1, 1994): 9948–51. http://dx.doi.org/10.1103/physrevb.50.9948.

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16

Ghosh, K., S. B. Ogale, R. Ramesh, R. L. Greene, T. Venkatesan, K. M. Gapchup, Ravi Bathe, and S. I. Patil. "Transition-element doping effects inLa0.7Ca0.3MnO3." Physical Review B 59, no. 1 (January 1, 1999): 533–37. http://dx.doi.org/10.1103/physrevb.59.533.

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17

Blasco, J., J. A. Rodríguez-Velamazán, C. Ritter, J. Sesé, J. Stankiewicz, and J. Herrero-Martín. "Electron doping effects on Sr2FeReO6." Solid State Sciences 11, no. 9 (September 2009): 1535–41. http://dx.doi.org/10.1016/j.solidstatesciences.2009.06.026.

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18

Van Overstraeten, Roger J., and Robert P. Mertens. "Heavy doping effects in silicon." Solid-State Electronics 30, no. 11 (November 1987): 1077–87. http://dx.doi.org/10.1016/0038-1101(87)90070-0.

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19

FUNABIKI, Fuji, Toshio KAMIYA, and Hideo HOSONO. "Doping effects in amorphous oxides." Journal of the Ceramic Society of Japan 120, no. 1407 (2012): 447–57. http://dx.doi.org/10.2109/jcersj2.120.447.

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20

FUNABIKI, Fuji, Toshio KAMIYA, and Hideo HOSONO. "Doping effects in amorphous oxides." Journal of the Ceramic Society of Japan 120, no. 1408 (2012): 616—A—616—A. http://dx.doi.org/10.2109/jcersj2.120.616-a.

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21

Li, J. Q., C. C. Lam, J. Feng, and K. C. Hung. "Effects of In doping in." Superconductor Science and Technology 11, no. 2 (February 1, 1998): 217–22. http://dx.doi.org/10.1088/0953-2048/11/2/008.

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22

Piner, E. L., D. M. Keogh, J. S. Flynn, and J. M. Redwing. "AlGaN/GaN High Electron Mobility Transistor Structure Design and Effects on Electrical Properties." MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 349–54. http://dx.doi.org/10.1557/s109257830000449x.

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We report on the effect of strain induced polarization fields in AlGaN/GaN heterostructures due to the incorporation of Si dopant ions in the lattice. By Si-doping (Al)GaN, a contraction of the wurtzite unit cell can occur leading to strain in doped AlGaN/GaN heterostructures such as high electron mobility transistors (HEMTs). In a typical modulation doped AlGaN/GaN HEMT structure, the Si-doped AlGaN supply layer is separated from the two-dimensional electron gas channel by an undoped AlGaN spacer layer. This dopant-induced strain, which is tensile, can create an additional source of charge at the AlGaN:Si/AlGaN interface. The magnitude of this strain increases as the Si doping concentration increases and the AlN mole fraction in the AlGaN decreases. Consideration of this strain should be given in AlGaN/GaN HEMT structure design.

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23

R.W. Ahmad, W., M. H. Mamat, A. S. Zoolfakar, Z. Khusaimi, M. M. Yusof, A. S. Ismail, S. A. Saidi, and M. Rusop. "The Effects of Sn-Doping on a-Fe2O3 Nanostructures Properties." International Journal of Engineering & Technology 7, no. 3.11 (July 21, 2018): 34. http://dx.doi.org/10.14419/ijet.v7i3.11.15925.

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In this study, undoped and Sn-doped hematite (α-Fe2O3) nanostructures with variation of Sn (0.5, 1, 2, 3 at. %) were deposited on fluorine doped tin oxide (FTO) coated glass substrate using sonicated immersion method. The effect of Sn-dopant on structural and crystallinity properties were investigated by characterizing FESEM and XRD respectively, while the optical properties were measured by UV-Vis-NIR spectrometer. The surface morphologies from FESEM have shown that the hematite nanostructures were grown uniformly in all samples. However, as the dopant atomic percentage increases, the amount of hematite nanostructure being grown on the FTO decreases. Results demonstrated that the amount of Sn-doping was undoubtedly influence the structural, optical and electrical properties of hematite nanostructures.

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24

Lin, Huixing, Wei Chen, and Lan Luo. "Effects of V2O5 on the synthesis of Ba2Ti9O20 powders." Journal of Materials Research 20, no. 10 (October 2005): 2741–44. http://dx.doi.org/10.1557/jmr.2005.0333.

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Phase-pure Ba2Ti9O20 powders were made by doping 3 wt% of V2O5 to a Ba:Ti = 2:9 molar composition, and the effects of the dopant on the phase formation were investigated. The study shows that BaTiO3, BaTi2O5, and BaTi4O9 were the intermediate phases before the formation of Ba2Ti9O20 for samples with or without V2O5. However, with V2O5 doping, the temperature at which Ba2Ti9O20 occurred were lowered from 1150 to 1050 °C and single phase Ba2Ti9O20 powders was easily obtained at 1150 °C for 2 h. Microstructure of the powders was examined by field emission scanning electron microscopy. No evidence of V2O5–Ba2Ti9O20 solid-solution was found by x-ray diffraction and energy-dispersive spectroscopy. The benefit of V2O5 to facilitate the Ba2Ti9O20 synthesis is most probably due to a vanadium-containing eutectic liquid phase which accelerates the migration of reactant species.

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25

Jandow, Nidhal Nissan. "Effects of Cu-Doping on Optical Properties of NiO." International Letters of Chemistry, Physics and Astronomy 48 (March 2015): 155–62. http://dx.doi.org/10.18052/www.scipress.com/ilcpa.48.155.

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This work presents the effect of Cu-doping on some optical properties of Cu:NiO thin film prepared by spray pyrolysis technique. UV-Visible spectrophotometer in the range 380-900 nm used to determine the absorbance spectra for various Cu-doping of Cu:NiO thin film. The transmittance and energy gap are decreased with increasing Cu-doping in the prepared films, while absorption coefficient, extinction coefficient, and skin depth are increased with increasing Cu-doping.

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26

Jandow, Nidhal Nissan. "Effects of Cu-Doping on Optical Properties of NiO." International Letters of Chemistry, Physics and Astronomy 48 (March 25, 2015): 155–62. http://dx.doi.org/10.56431/p-5mlawz.

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This work presents the effect of Cu-doping on some optical properties of Cu:NiO thin film prepared by spray pyrolysis technique. UV-Visible spectrophotometer in the range 380-900 nm used to determine the absorbance spectra for various Cu-doping of Cu:NiO thin film. The transmittance and energy gap are decreased with increasing Cu-doping in the prepared films, while absorption coefficient, extinction coefficient, and skin depth are increased with increasing Cu-doping.

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27

El-Shobaky, G. A., M. A. Shouman, and M. N. Alaya. "Effects of Li2O Doping on the Surface and Catalytic Properties of Co3O4–Fe2O3 Solids Precalcined at Different Temperatures." Adsorption Science & Technology 18, no. 3 (April 2000): 243–60. http://dx.doi.org/10.1260/0263617001493413.

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The effects of Li2O treatment on the solid–solid interactions and the surface and catalytic properties of the Co3O4–Fe2O3 system have been studied using TG, DTA and XRD methods, nitrogen adsorption studies at −196°C and the catalytic oxidation of CO by O2 at 150–350°C. The results obtained showed that Li2O doping followed by precalcination at 500–1000°C enhanced the formation of cobalt ferrite to an extent proportional to the amount of dopant added (0.52–6.0 mol% Li2O). The solid–solid interaction leading to the formation of CoFe2O4 took place at temperatures ≥700°C in the presence of the Li2O dopant. Lithia doping modified the surface characteristics of the Co3O4–Fe2O3 solids, both increasing and decreasing their BET surface areas depending on the amount of dopant added and the precalcination temperature employed for the treated solids. The activation energy of sintering (ΔES) of cobalt/ferric mixed oxides was determined for the pure and doped solids from the variation in their specific surface areas as a function of the precalcination temperature. Both an increase and a decrease in the value of ΔES due to Li2O doping occurred depending on the amount of lithia added. The doping of Co3O4–FeO solids, followed by precalcination at 500°C, effected a significant increase (144%) in their catalytic activity towards CO oxidation by O2. Precalcination at 700–1000°C of the mixed oxide solids doped with Li2O (0.52 and 0.75 mol%) resulted in an increase in their catalytic activity which decreased upon increasing the amount of Li2O added above this limit. The activation energy of the catalyzed reaction was determined for the pure and variously doped solids studied.

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28

Goldmann, Benedek A., Matt J. Clarke, James A. Dawson, and M. Saiful Islam. "Atomic-scale investigation of cation doping and defect clustering in the anti-perovskite Na₃OCl sodium-ion conductor." Journal of Materials Chemistry A 10, no. 5 (2022): 2249–55. http://dx.doi.org/10.1039/d1ta07588h.

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29

Tsubouchi, Nobuteru, M. Ogura, H. Watanabe, Akiyoshi Chayahara, and Hideyo Okushi. "Diamond Doped by Hot Ion Implantation." Materials Science Forum 600-603 (September 2008): 1353–56. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.1353.

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Multiple P or S hot ion implantation to diamond substrates was performed at 800°C. Optical absorption spectra indicated that instantaneous annealing during hot ion implantation occurs. Temperature dependence of resistance demonstrated that a P as-implanted sample using a homoepitaxial diamond film substrate emerges a weak doping effect. Also on S implantation, a presence of a weak doping effect was observed in an as-implanted sample, but it was suggested that the dopant is not S itself but S and defect complex. However, post-implantation annealing resulted in high resistance of the samples and missing of such weak doping effects.

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30

Srinivasan, Bhuvanesh, Alain Gellé, Jean-François Halet, Catherine Boussard-Pledel, and Bruno Bureau. "Detrimental Effects of Doping Al and Ba on the Thermoelectric Performance of GeTe." Materials 11, no. 11 (November 11, 2018): 2237. http://dx.doi.org/10.3390/ma11112237.

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GeTe-based materials are emerging as viable alternatives to toxic PbTe-based thermoelectric materials. In order to evaluate the suitability of Al as dopant in thermoelectric GeTe, a systematic study of thermoelectric properties of Ge1−xAlxTe (x = 0–0.08) alloys processed by Spark Plasma Sintering are presented here. Being isoelectronic to Ge1−xInxTe and Ge1−xGaxTe, which were reported with improved thermoelectric performances in the past, the Ge1−xAlxTe system is particularly focused (studied both experimentally and theoretically). Our results indicate that doping of Al to GeTe causes multiple effects: (i) increase in p-type charge carrier concentration; (ii) decrease in carrier mobility; (iii) reduction in thermopower and power factor; and (iv) suppression of thermal conductivity only at room temperature and not much significant change at higher temperature. First principles calculations reveal that Al-doping increases the energy separation between the two valence bands (loss of band convergence) in GeTe. These factors contribute for Ge1−xAlxTe to exhibit a reduced thermoelectric figure of merit, unlike its In and Ga congeners. Additionally, divalent Ba-doping [Ge1−xBaxTe (x = 0–0.06)] is also studied.

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31

Ko, Hang-Ju, Yefan Chen, Soon-Ku Hong, and Takafumi Yao. "Doping effects in ZnO layers using Li3N as a doping source." Journal of Crystal Growth 251, no. 1-4 (April 2003): 628–32. http://dx.doi.org/10.1016/s0022-0248(03)00830-3.

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32

Nie, Xiliang, Shuping Zhuo, Gloria Maeng, and Karl Sohlberg. "Doping ofTiO2Polymorphs for Altered Optical and Photocatalytic Properties." International Journal of Photoenergy 2009 (2009): 1–22. http://dx.doi.org/10.1155/2009/294042.

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This paper reviews recent investigations of the influence of dopants on the optical properties ofTiO2polymorphs. The common undoped polymorphs ofTiO2are discussed and compared. The results of recent doping efforts are tabulated, and discussed in the context of doping by elements of the same chemical group. Dopant effects on the band gap and photocatalytic activity are interpreted with reference to a simple qualitative picture of theTiO2electronic structure, which is supported with first-principles calculations.

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33

Jing, Ming Han, Jun Lin Yang, Yi Liu, Zheng Jing Zhao, Xiao Qian Wang, Jing Bo Li, and Hai Bo Jin. "W-Nb Co-Doped VO<sub>2</sub> Films Realizing near Room-Temperature Transition and Satisfactory Thermochromic Performance for Smart Window." Materials Science Forum 1070 (October 13, 2022): 145–55. http://dx.doi.org/10.4028/p-rp934x.

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The W-Nb co-doped VO2 films are prepared through hydrothermal method. The effects of the Nb and W dopants are investigated respectively on the phase transition temperature (θc) and optical properties of VO2 by keeping the concentration of partner dopant at 1.0 at.%. The Nb doping induces a reduction of θc at a rate of ~ -13.0 °C per at.% Nb as Nb is less than ~1.5 at.%. For more than 1.5 at.% Nb, the θc shows a slight increase from ~23.0 °C. The W doping leads to a linear decrease of θc with a rate of ~ -17.2 °C per at.% W, more effective in reducing θc than the Nb dopant. However, the heavy W doping results in more serious deterioration of the solar energy modulation (ΔTsol) than the Nb doping. Therefore, taking use of the complementary advantages of W and Nb dopants, the 1.0 at.% W + 1.5 at.% Nb co-doped VO2 realizes the room-temperature transition at 23.0 °C with a satisfactory ΔTsol of ~9.6%, much better than the 1.5 at.% W + 1.0 at.% Nb co-doped which has a θc of ~22.1 °C and ΔTsol of ~5.3%. This work demonstrates the W-Nb co-doping is an effective doping formula in improving the performance of VO2 for smart window applications.

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34

Teng, Peng, Tong Zhou, Yonghuan Wang, Ke Zhao, Xiegang Zhu, and Xinchun Lai. "Electrical transport properties of cerium doped Bi₂Te₃ thin films grown by molecular beam epitaxy." Journal of Semiconductors 42, no. 12 (December 1, 2021): 122902. http://dx.doi.org/10.1088/1674-4926/42/12/122902.

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Abstract Introducing magnetism into topological insulators (TIs) can tune the topological surface states and produce exotic physical effects. Rare earth elements are considered as important dopant candidates, due to their large magnetic moments from heavily shielded 4f electrons. As the first element with just one 4f electron, cerium (Ce) offers an ideal platform for exploring the doping effect of f-electron in TIs. Here in this work, we have grown cerium-doped topological insulator Bi2Te3 thin films on an Al2O3(0001) substrate by molecular beam epitaxy (MBE). Electronic transport measurements revealed the Kondo effect, weak anti-localization (WAL) effect and suppression of surface conducting channels by Ce doping. Our research shows the fundamental doping effects of Ce in Bi2Te3 thin films, and demonstrates that such a system could be a good platform for further research.

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35

Ni, Tie Quan, Chang Jun Ke, and Bing Yuan. "Effects of Modified Gypsum on Autoclaved Products Strength." Advanced Materials Research 374-377 (October 2011): 1235–38. http://dx.doi.org/10.4028/www.scientific.net/amr.374-377.1235.

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The modified tests are put on by selecting gypsum from different habitats, using doping technology and calcination technology. The tests results can be summarized as follows. Different kinds of gypsums have different effects on the strength of fly ash autoclaved products, and so do the gypsums collected from different habitats. Low-purity gypsums helps to improve the strength of autoclaved products. Low-purity scatter of gypsum can be achieved by means of natural doping and artificial doping, and natural doping is better. Calcined gypsum could increase the strength of fly ash products within a certain range, and the best calcining temperature is about 650°C.

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Jian, Yongxin, Zhifu Huang, Yu Wang, and Jiandong Xing. "Effects of Doped Elements (Si, Cr, W and Nb) on the Stability, Mechanical Properties and Electronic Structures of MoAlB Phase by the First-Principles Calculation." Materials 13, no. 19 (September 23, 2020): 4221. http://dx.doi.org/10.3390/ma13194221.

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First-principles calculations based on density functional theory (DFT) have been performed to explore the effects of Si, Cr, W, and Nb elements on the stability, mechanical properties, and electronic structures of MoAlB ternary boride. The five crystals, with the formulas of Mo4Al4B4, Mo4Al3SiB4, Mo3CrAl4B4, Mo3WAl4B4, and Mo3NbAl4B4, have been respectively established. All the calculated crystals are thermodynamically stable, according to the negative cohesive energy and formation enthalpy. By the calculation of elastic constants, the mechanical moduli and ductility evolutions of MoAlB with elemental doping can be further estimated, with the aid of B/G and Poisson’s ratios. Si and W doping cannot only enhance the Young’s modulus of MoAlB, but also improve the ductility to some degree. Simultaneously, the elastic moduli of MoAlB are supposed to become more isotropic after Si and W addition. However, Cr and Nb doping plays a negative role in ameliorating the mechanical properties. Through the analysis of electronic structures and chemical bonding, the evolutions of chemical bondings can be disclosed with the addition of dopant. The enhancement of B-B, Al/Si-B, and Al/Si-Mo bondings takes place after Si substitution, and W addition apparently intensifies the bonding with B and Al. In this case, the strengthening of chemical bonding after Si and W doping exactly accounts for the improvement of mechanical properties of MoAlB. Additionally, Si doping can also improve the Debye temperature and melting point of the MoAlB crystal. Overall, Si element is predicted to be the optimized dopant to ameliorate the mechanical properties of MoAlB.

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Hsu, Wen K., Steven Firth, Philipp Redlich, Mauricio Terrones, Humberto Terrones, Yan Q. Zhu, Nicole Grobert, et al. "Boron-doping effects in carbon nanotubes." Journal of Materials Chemistry 10, no. 6 (2000): 1425–29. http://dx.doi.org/10.1039/b000720j.

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Migita, M., K. Sugai, M. Takeda, M. Uehara, T. Kuramoto, Y. Takano, Y. Mizuguchi, D. Hamane, and Y. Kimishima. "Ag Doping Effects in FeSe0.5Te0.5 superconductor." Transactions of the Materials Research Society of Japan 38, no. 4 (2013): 609–13. http://dx.doi.org/10.14723/tmrsj.38.609.

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Schmidt, T. M., P. P. M. Venezuela, M. J. Caldas, and A. Fazzio. "Carbon doping of GaAs: Compensation effects." Applied Physics Letters 66, no. 20 (May 15, 1995): 2715–17. http://dx.doi.org/10.1063/1.113498.

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Yang, Jie, and Jun Shen. "Doping effects in organic electroluminescent devices." Journal of Applied Physics 84, no. 4 (August 15, 1998): 2105–11. http://dx.doi.org/10.1063/1.368271.

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41

Malavasi, Lorenzo, Maria Cristina Mozzati, Clemens Ritter, Vladimir Pomjakushin, Cristina Tealdi, Carlo Bruno Azzoni, and Giorgio Flor. "Doping Effects in Single-Layered La0.5Sr1.5MnO4Manganite." Journal of Physical Chemistry B 110, no. 35 (September 2006): 17430–36. http://dx.doi.org/10.1021/jp063384+.

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Bahoosh, Safa Golrokh, and J. M. Wesselinowa. "Ion doping effects in multiferroic MnWO4." Journal of Applied Physics 111, no. 8 (April 15, 2012): 083906. http://dx.doi.org/10.1063/1.4703913.

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Eriksson, S. G., L. G. Johansson, and C. Olsson. "Doping effects on the 123-system." Physica C: Superconductivity 153-155 (1988): 902–3. http://dx.doi.org/10.1016/s0921-4534(88)80146-1.

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Eggert, Sebastian, and Fabrizio Anfuso. "Doping effects in low dimensional antiferromagnets." Physica B: Condensed Matter 384, no. 1-2 (October 2006): 192–95. http://dx.doi.org/10.1016/j.physb.2006.05.225.

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Mousavi, Hamze. "Boron doping effects on graphene susceptibility." Physica E: Low-dimensional Systems and Nanostructures 43, no. 4 (February 2011): 971–74. http://dx.doi.org/10.1016/j.physe.2010.11.027.

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Zhang, Changjin, and Yuheng Zhang. "Effects of Fe doping of La1.85Sr0.15CuO4." Journal of Physics: Condensed Matter 14, no. 41 (October 3, 2002): 9659–65. http://dx.doi.org/10.1088/0953-8984/14/41/321.

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Polyakov, A. Y., N. B. Smirnov, A. V. Govorkov, N. G. Kolin, D. I. Merkurisov, V. M. Boiko, A. V. Korulin, and S. J. Pearton. "Neutron transmutation doping effects in GaN." Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 28, no. 3 (May 2010): 608–12. http://dx.doi.org/10.1116/1.3431083.

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Guan, Xiaoyu, Yong Zhao, and Xiaoqiu Jia. "Ni doping effects in YBa2Fe3O8+w." Journal of Modern Transportation 19, no. 4 (December 2011): 247–51. http://dx.doi.org/10.1007/bf03325765.

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Mori, T., T. Shishido, and K. Nakajima. "Doping Effects in Rare-Earth Borides." Journal of Electronic Materials 38, no. 7 (February 18, 2009): 1098–103. http://dx.doi.org/10.1007/s11664-009-0683-9.

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50

Direksilp, Chatrawee, and Anuvat Sirivat. "Synthesis and Characterization of Hollow-Sphered Poly(N-methyaniline) for Enhanced Electrical Conductivity Based on the Anionic Surfactant Templates and Doping." Polymers 12, no. 5 (May 1, 2020): 1023. http://dx.doi.org/10.3390/polym12051023.

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Poly(N-methylaniline) (PNMA) is a polyaniline derivative with a methyl substituent on the nitrogen atom. PNMA is of interest owing to its higher solubility in organic solvents when compared to the unsubstituted polyaniline. However, the electrical conductivity of polyaniline derivatives suffers from chemical substitution. PNMA was synthesized via emulsion polymerization using three different anionic surfactants, namely sodium dodecylsulfate (SDS), sodium dodecylbenzenesulfonate (SDBS), and dioctyl sodium sulfosuccinate (AOT). The effects of surfactant structures and concentrations on electrical conductivity, doping level, crystallinity, morphology, and thermal stability were investigated. The re-doping step using perchloric acid (HClO4) as a dopant was sequentially proceeded to enhance electrical conductivity. PNMA synthesized in SDBS at five times its critical micelle concentration (CMC) demonstrated the highest electrical conductivity, doping level, and thermal stability among all surfactants at identical concentrations. Scanning electron microscopy (SEM) images revealed that the PNMA particle shapes and sizes critically depended on the surfactant types and concentrations, and the doping mole ratios in the re-doping step. The highest electrical conductivity of 109.84 ± 20.44 S cm−1 and a doping level of 52.45% were attained at the doping mole ratio of 50:1.

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