Relevant bibliographies by topics / Doping Effects

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
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Academic literature on the topic 'Doping Effects'

Author: Grafiati
Published: 6 September 2023

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Journal articles on the topic "Doping Effects"

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Elmar qızı Şahbazlı, Nəzrin. "Prohibited doping substances and methods, their definition. Doping control procedure." SCIENTIFIC WORK 65, no. 04 (April 21, 2021): 147–50. http://dx.doi.org/10.36719/2663-4619/65/147-150.

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Doping by humans, both in competitions and on a daily basis, remains a major health problem in modern times. There are many growing body of evidences on the negative health effects of using doping. Doping-is the use of substances that will artificially increase their performance and harm the physical and psychological health of the athlete during a race or in preparation for a game. Worldwide doping controls are carried out in accordance with the Code and the International Standard for Testing (IST). Athletes who compete at the international and national level may be tested anytime, anywhere. Specially trained and accredited doping control personnel carry out all tests. The doping control procedure is clearly defined for all anti-doping organizations in the World Anti-Doping Agency (WADA) International Standard for Testing and Investigations (ISTI). Key words: doping substances, sports, harmful substance, fairplay, health, control of doping, methods of doping
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Md. Ziaul Amin, Md Ziaul Amin, Khurram Karim Qureshi Khurram Karim Qureshi, and Md Mahbub Hossain Md. Mahbub Hossain. "Doping radius effects on an erbium-doped fiber amplifier." Chinese Optics Letters 17, no. 1 (2019): 010602. http://dx.doi.org/10.3788/col201917.010602.

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Yu, Fucheng, Hailong Hu, Bolong Wang, Haishan Li, Tianyun Song, Boyu Xu, Ling He, Shu Wang, and Hongyan Duan. "Effects of Al doping on defect behaviors of ZnO thin film as a photocatalyst." Materials Science-Poland 37, no. 3 (September 1, 2019): 437–45. http://dx.doi.org/10.2478/msp-2019-0050.

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AbstractAl doped ZnO (AZO) thin films were prepared on silica substrates by sol-gel method. The films showed a hexagonal wurtzite structure with a preferred orientation along c-axis. Suitable Al doping dramatically improved the crystal quality compared to the undoped ZnO films. Dependent on the Al dopant concentration, the diffraction peak of (0 0 2) plane in XRD spectra showed at first right-shifting and then left-shifting, which was attributed to the change in defect concentration induced by the Al dopant. Photocatalytic properties of the AZO film were characterized by degradation of methyl orange (MO) under simulated solar light. The transmittance of the films was enhanced by the Al doping, and the maximum transmittance of 80 % in the visible region was observed in the sample with Al concentration of 1.5 at.% (mole fraction). The film with 1.5 at.% Al doping achieved also maximum photocatalytic activity of 68.6 % under solar light. The changes in the film parameters can be attributed to the variation in defect concentration induced by different Al doping content.
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Li, Dan, Wei-Qing Huang, Zhong Xie, Liang Xu, Yin-Cai Yang, Wangyu Hu, and Gui-Fang Huang. "Mechanism of enhanced photocatalytic activities on tungsten trioxide doped with sulfur: Dopant-type effects." Modern Physics Letters B 30, no. 27 (October 10, 2016): 1650340. http://dx.doi.org/10.1142/s0217984916503401.

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The enhanced photocatalytic activity of tungsten trioxide (WO3) has been observed experimentally via doping with S element as different dopant types. Herein, a comparative study on the effect of different types of S dopant and native vacancy defects on the electronic structure and optical properties of WO3 is presented by using hybrid Heyd–Scuseria–Ernzerhof 2006 (HSE06) density functional methods. Six possible models (S[Formula: see text]–WO3, S[Formula: see text]–WO3, V[Formula: see text]–WO3, V[Formula: see text]–WO3, S[Formula: see text] + V[Formula: see text]–WO3 and S[Formula: see text] + V[Formula: see text]–WO3) based on WO3 are tentatively put forward. It is found that cationic S doping (the substitution of W by S) is more favorable than anionic S doping (replacing O with S), and both cases become easier to form as native vacancy defect is accompanied. The electronic structures of doped WO3 depend on the type of dopant: anionic S doping results into three isolated levels in the upper part of valence band, while cationic S doping only induces an effective band gap reduction, which is critical for efficient light-to-current conversion. Interestingly, the isolated states near gap of WO3 would appear as long as native vacancy defects exist. The introduced levels or reduced band gaps make the systems responsed to the visible light, even further to a range of 400–700 nm. These findings can rationalize the available experimental results and pave the way for developing WO3-based photocatalysts.
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Heiblum, M. "Doping effects in AlGaAs." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 3, no. 3 (May 1985): 820. http://dx.doi.org/10.1116/1.583110.

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Geibel, C., C. Schank, F. Jährling, B. Buschinger, A. Grauel, T. Lühmann, P. Gegenwart, R. Helfrich, P. H. P. Reinders, and F. Steglich. "Doping effects on UPd2Al3." Physica B: Condensed Matter 199-200 (April 1994): 128–31. http://dx.doi.org/10.1016/0921-4526(94)91757-4.

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Weiden, M., W. Richter, C. Geibel, F. Steglich, P. Lemmens, B. Eisener, M. Brinkmann, and G. Güntherodt. "Doping effects in CuGeO3." Physica B: Condensed Matter 225, no. 3-4 (July 1996): 177–90. http://dx.doi.org/10.1016/0921-4526(96)86773-1.

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Wang, Zhi Yong. "The Effects of Heteroatom-Doping in Stone-Wales Defects on the Electronic Properties of Graphene Nanoribbons." Advanced Materials Research 463-464 (February 2012): 793–97. http://dx.doi.org/10.4028/www.scientific.net/amr.463-464.793.

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The effects of boron(nitrogen/silicon)-dopant in Stone-Wales defects on electronic properties of graphene nanoribbons are investigated by using density functional theory. It is shown that the geometry structures and band structures have changed distinctly for these complex configurations. Interestingly for the dopant site 1, the distortions of boron/silicon-doping configurations are larger than that of the nitrogen-doping configurations, which affects the band structures of these configurations. The theoretical results may be valuable for the design of electronic devices.
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Wei, Yin, Hongjie Wang, Xuefeng Lu, Xingyu Fan, and Heng Wei. "Effects of element doping on electronic structures and optical properties in cubic boron nitride from first-principles." Modern Physics Letters B 31, no. 16 (June 2017): 1750166. http://dx.doi.org/10.1142/s0217984917501664.

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Attractive potential applications of cubic boron nitride (c-BN) derive from the properties of semiconductors, widely used in optoelectronic and microelectronic devices. In this paper, the effects of element doping on the electronic structures and optical properties in cubic boron nitride are investigated. The Al- and Ga-doped systems have the lower bonding energies of −11.544 eV and −5.302 eV, respectively, indicating better stability. Difference charge density maps demonstrate that the electron loss increases after P doping and decreases after Al, Ga and As dopings, indicating that the covalent character of polar covalent bonds decreases by doping in the range of P, Al, Ga and As, which is in accordance with the calculated atom population values. The Al- and Ga-doped systems show lower dielectric loss, absorption and reflectivity in the lower energy region, displaying the “transparent-type” characteristic and their potential applications in electron devices.
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Mohtar, Safia Syazana, Farhana Aziz, Ahmad Fauzi Ismail, Nonni Soraya Sambudi, Hamidah Abdullah, Ahmad Nazrul Rosli, and Bunsho Ohtani. "Impact of Doping and Additive Applications on Photocatalyst Textural Properties in Removing Organic Pollutants: A Review." Catalysts 11, no. 10 (September 26, 2021): 1160. http://dx.doi.org/10.3390/catal11101160.

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The effect of ion doping and the incorporation of additives on photocatalysts’ textural properties have been reviewed. Generally, it can be summarised that ion doping and additives have beneficial effects on photocatalytic efficiency and not all have an increase in the surface area. The excessive amount of dopants and additives will produce larger aggregated particles and also cover the mesoporous structures, thereby increasing the pore size (Pd) and pore volume (Pv). An excessive amount of dopants also leads to visible light shielding effects, thus influence photocatalytic performance. Ion doping also shows some increment in the surface areas, but it has been identified that synergistic effects of the surface area, porosity, and dopant amount contribute to the photocatalytic performance. It is therefore important to understand the effect of doping and the application of additives on the textural properties of photocatalysts, thus, their performance. This review will provide an insight into the development of photocatalyst with better performance for wastewater treatment applications.
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Dissertations / Theses on the topic "Doping Effects"

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Tutakhail, Abdulkarim. "Potential muscular doping effects of anti-depressants." Thesis, Université Paris-Saclay (ComUE), 2019. http://www.theses.fr/2019SACLS513.

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Bien que l’effet psychotrope des antidépresseurs soit bien connu, afin de corriger les conséquences du stress et de renforcer la confiance en soi, de nombreux autres effets pharmacologiques, notamment périphériques, doivent encore être approfondis. Les antidépresseurs inhibiteurs de la recapture de la sérotonine (ISRS) peuvent avoir un effet bénéfique sur la performance physique en participant à une réparation et à une croissance plus rapides des muscles. Il a récemment été démontré que la sérotonine était impliquée dans la récupération de la force musculaire chez un modèle murin de myopathie de Duchenne (Gurel et al., 2015). Les antidépresseurs tels que les inhibiteurs sélectifs de la recapture de la sérotonine (ISRS) sont largement utilisés pour traiter divers troubles de la santé mentale, tels que la dépression modérée à sévère et l’anxiété. Les deux symptômes contribuent à l’insomnie, à la perte d’appétit, au manque de motivation et à une fatigue physique accrue. Ces symptômes peuvent nuire aux performances physiques des athlètes, en particulier de ceux qui développent des habiletés et des techniques spécifiques à un sport, reçoivent des volumes d’entraînement plus importants à différentes intensités et participent à des compétitions plus fréquentes. Par conséquent, les athlètes peuvent utiliser des médicaments qui renforcent la motivation et / ou améliorent la condition physique générale en réduisant les symptômes dépressifs. L'utilisation d'antidépresseurs n'est pas encore interdite dans les sports d'élite. Des rapports récents sur le dopage associé aux ISRS montrent une tendance croissante de son utilisation chez les athlètes en bonne santé. La consommation d'antidépresseurs chez les athlètes a augmenté dans différents sports au cours de la dernière décennie, notamment les sports d'endurance.. Notre projet doit donc permettre de caractériser les conséquences d'un traitement chronique par ISRS sur les performances physiques chez la souris et de mettre en évidence le ou les mécanismes impliqués, en particulier la variation du shunt métabolique sérotonine / kynurénine, ainsi que les modifications de biomarqueurs, variations potentiellement utilisables chez l'homme dans la lutte contre le dopage.Nous aimerions élucider notre travail de recherche dans les articles suivants:Article 1: Nous avons étudié les effets de l'exercice et de la fluoxétine seuls ou en association avec un traitement prolongé à la fluoxétine (18 mg / kg / jour) et un exercice physique d'endurance (six semaines) chez la souris mâle BalbC / j, sur tapis roulant. Nous avons ensuite évalué l'activité neurocomportementale, les marqueurs musculaires du stress oxydatif et les modifications du métabolisme du tryptophane dans les tissus plasmatiques, musculaires et cérébraux des souris BalbC / J. En général, nous nous sommes concentrés sur la vitesse aérobie la plus élevée, le temps d’endurance jusqu’à l’épuisement, la force musculaire des membres antérieurs en saisissant un mesureur de force, des tests neurocomportementaux tels que le test en champ ouvert et élevé et le labyrinthe, l’activité enzymatique mitochondriale (activité du citrate synthase et du cytochrome C oxydase) dans le muscle gastrocnémien. , marqueur de stress oxydant tel que le test DHE (Dihydroéthidium) et DCF-DA (Dichlorofluorscine diacétate).Article 2: Nous avons étudié les effets de l’exercice et de la fluoxétine seule ou les effets combinés d’un traitement prolongé à la fluoxétine (18 mg / kg / jour) et d’un exercice d’endurance physique (six semaines) chez la souris mâle BalbC / j, sur tapis roulant
As much as the psychotropic effect of antidepressants is well known, correcting the consequences of stress and boosting self-confidence, so many other pharmacological effects, peripheral in particular, remain to be deepened. Serotonin reuptake inhibitor antidepressants (SSRIs) may have a beneficial effect on physical performance by participating in faster muscle repair and growth. It has recently been shown that serotonin was involved in the recovery of muscle strength in a mouse model of Duchenne myopathy (Gurel et al., 2015).Antidepressants such as selective serotonin reuptake inhibitors (SSRIs) are widely used to treat various mental health disorders, such as moderate-to-severe depression and anxiety. Both symptoms contribute to insomnia, loss of appetite, lack of motivation and increased physical fatigue. These symptoms can impair physical performances for athletes, more specifically for those who develop sport-specific skills and techniques, receive higher training volumes at various intensities, and participate in more frequent competitions. Therefore athletes may use drugs that enhance motivation and/or improve overall fitness by reducing depressive symptoms. The use of antidepressants is not yet forbidden in elite sports. Recent reports on doping associated with SSRIs show an increasing trend of its usage among healthy athletes. The antidepressants intake among athletes has increased in different sports over the last decade, especially endurance sports. The antidepressants Bupropion and Amineptine were removed from the list of banned substances.Our project must therefore make it possible to characterize the consequences of chronic treatment with SSRIs on the physical performance in mice and to highlight the mechanism (s) involved, in particular the variation of the serotonin / kynurenine metabolic shunt, as well as the modifications of biomarkers, potentially usable variations in humans in the fight against doping.We would like to elucidate our research work in the following articles:Article 1: We studied the effects of exercise and fluoxetine alone or in combination of long-term fluoxetine treatment (18mg/kg/day) and endurance physical exercise (six weeks) in male balbC/j mice, on animal treadmill. Subsequently we evaluated neurobehavioral activity, muscle markers of oxidative stress, and changes in tryptophan metabolism in plasma, muscle and brain tissues in the BalbC/J mice. Generally we focused on the highest aerobic velocity, endurance time until exhaustion, forelimb muscle strength by gripping strength meter, neurobehavioral tests such as open field and elevated plus maze test, mitochondrial enzyme activity (Citrate synthase and cytochrome-C oxidase activity) in gastrocnemius muscle, oxidative stress marker such as DHE (Dihydroethidium) and DCF-DA (Dichlorofluorscine di-acetate)test.Article 2: We studied the effects of exercise and fluoxetine alone or combinative effects of long-term fluoxetine treatment (18mg/kg/day) and endurance physical exercise (six weeks) in male balbC/j mice, on animal treadmill. After the mentioned exercise protocol we focused on changes in tryptophan (TRP) metabolism in plasma, muscle and brain tissues in the BalbC/J mice. To confirm the metabolomic, we also studied the KP related enzyme related genes and proteins by the modern required materials and methods. We correlated the result of article1 with the metabolites level of kynurenine pathway of tryptophan metabolism. We studied the expression of transcriptor factor PGC1α level in muscle which is induced by physical exercise(Agudelo et al., 2014). PGC1α subsequently induce the expression of kynurenine aminotransferase 1 and 2 (KAT1 and KAT2) in skeletal muscles, which convert kynurenine (KYN) to kynurenic acid (KYNA). Conversion of kynurenine to kynurenic acid decrease the level of kynurenine and quinolinic acid an NMDA receptor agonist and a neurotoxic compound
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Thompson, Robin Forster. "Doping effects in hydrogenated amorphous silicon solar cells." Thesis, Heriot-Watt University, 1985. http://hdl.handle.net/10399/1624.

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Rodriguez-Nieva, Joaquin F. (Joaquin Francisco). "Effects of isotope doping on the phonon modes in graphene." Thesis, Massachusetts Institute of Technology, 2012. http://hdl.handle.net/1721.1/79563.

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Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2012.
Cataloged from PDF version of thesis.
Includes bibliographical references (p. 41-46).
Carbon related systems have attracted a large amount of attention of the science and technology community during the last few decades. In particular, graphene and carbon nanotubes have remarkable properties that have inspired applications in several fields of science and engineering. Despite these properties, creating structurally perfect samples is a difficult objective to achieve. Defects are usually seen as imperfections that degrade the properties of materials. However, defects can also be exploited to create novel materials and devices. The main topic of this thesis is studying the effect of isotope doping on the phonon properties of graphene. The advantage of the isotope enrichment technique is that only phonon frequencies or thermal properties can be modified without changing the electrical or chemical properties. We calculated the values of the phonon lifetimes due to isotope impurity scattering for all values of isotopic fractions, isotopic masses and for all wave-vectors using second order perturbation theory. We found that for natural concentrations of 13C, the contribution of isotopic scattering of optical modes is negligible when compared to the contribution from the electron-phonon interaction. Nevertheless, for atomic concentrations of 13C as high as [rho] = 0.5 both the isotopic and electron-phonon contributions become comparable. Our results are compared with recent experimental results and we find good agreement both in the 13C atomic density dependence of the lifetime as well as in the calculated spectral width of the G-band. Due to phonon scattering by 13C isotopes, some graphene phonon wave-functions become localized in real space. Numerical calculations show that phonon localized states exist in the high-energy optical phonon modes and in regions of flat phonon dispersion. In particular, for the case of in-plane optical phonon modes, a typical localization length is on the order of 3 nm for 13C atomic concentrations of [rho] ~~ 0.5. Optical excitation of phonon modes may provide a way to experimentally observe localization effects for phonons in graphene.
by Joaquin F. Rodriguez-Nieva.
S.M.
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Walkup, Daniel. "Doping and strain effects in strongly spin-orbit coupled systems." Thesis, Boston College, 2016. http://hdl.handle.net/2345/bc-ir:106810.

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Thesis advisor: Vidya Madhavan
We present Scanning Tunneling Microscopy (STM) studies on several systems in which spin-orbit coupling leads to new and interesting physics, and where tuning by doping and/or strain can significantly modify the electronic properties, either inducing a phase transition or by sharply influencing the electronic structure locally. In the perovskite Iridate insulator Sr3Ir2O7, we investigate the parent compound, determining the band gap and its evolution in response to point defects which we identify as apical oxygen vacancies. We investigate the effects of doping the parent compound with La (in place of Sr) and Ru (in place of Ir). In both cases a metal-insulator transition (MIT) results: at x ~ 38% with Ru, and x ~ 5% with La. In the La-doped samples we find nanoscale phase separation at dopings just below the MIT, with metallic spectra associated with clusters of La atoms. Further, we find resonances near the Fermi energy associated with individual La atoms, suggesting an uneven distribution of dopants among the layers of the parent compound. Bi2Se3 is a topological insulator which hosts linearly dispersing Dirac surface states. Doping with In (in place of Bismuth) brings about topological phase transition, achieving a trivial insulator at x ~ 4%. We use high-magnetic field Landau level spectroscopy to study the surface state’s properties approaching the phase transition and find, by a careful analysis of the peak positions find behavior consistent with strong surface-state Zeeman effects: g~50. This interpretation implies, however, a relabeling of the Landau levels previously observed in pristine Bi2Se3, which we justify through ab initio calculations. The overall picture is of a g-factor which steadily decreases as In is added up to the topological phase transition. Finally, we examine the effects of strain on the surface states of (001) thin films of the topological crystalline insulator SnTe. When these films are grown on closely-related substrates—in this case PbSe(001)—a rich pattern of surface strain emerges. We use phase-sensitive analysis of atomic-resolution STM topographs to measure the strain locally, and spatially-resolved quasiparticle interference imaging to compare the Dirac point positions in regions with different types of strain, quantifying for the first time the effect of anisotropic strain on the surface states of a topological crystalline insulator
Thesis (PhD) — Boston College, 2016
Submitted to: Boston College. Graduate School of Arts and Sciences
Discipline: Physics
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Khromov, Sergey. "Doping effects on the structural and optical properties of GaN." Doctoral thesis, Linköpings universitet, Tunnfilmsfysik, 2013. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-100760.

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Today there is a strong drive towards higher efficiency light emitters and devices for power electronics based on GaN and its ternary compounds. Device performance can be improved in several ways on the material level. Development of bulk GaN to substitute sapphire and SiC as substrate materials can allow lower defect density epitaxial GaN layers to be grown. Using nonpolar homoepitaxial layers alleviates the problem of polarization fields present in polar GaN epilayers. This thesis advances the field by attacking outstanding problems related to doping and its influence on structural and optical properties of GaN. Optical and structural investigations were performed on bulk GaN grown by halide vapor phase epitaxy (HVPE) and on polar and nonpolar epitaxial GaN grown by metal organic chemical vapor deposition (MOCVD), doped with different impurities: Mg, Si, O or C. Optical characterization was done using photoluminescence (PL), time-resolved photoluminescence (TRPL), and cathodoluminescence (CL) in-situ scanning electron microscope, whereas structural properties were studied by means of transmission electron microscopy (TEM) and atom probe tomography (APT). A correlation between Mg doping levels and stacking fault (SF) concentration in highly Mg-doped c-plane homoepitaxial GaN layers is found. Increasing Mg concentrations, from 2×1018 cm-3 to 5×1019 cm-3, coincides with increasing density of small, 3-10 nm-sized, SFs. Emission lines ascribed to SFs are observed in CL in all the studied samples. The observed SF-related luminescence can be explained by a model where Mg atoms interacting with the nearby SF changes the confinement for holes and leads to a pronounced defectrelated luminescence. Non-polar m-plane homoepitaxial GaN layers with Mg concentration of 2×1018 cm-3 and 3×1019 cm-3 exhibits high density of basal SFs as well as a number of prismatic SFs. Instead of normally observed in nonpolar GaN SF-related broad lines several sharp lines are detected in the 3.36-3.42 eV region. Their relation to donor-acceptor pair recombination (DAP) was dismissed by calculating the DAP energies and fitting with the measured spectra. The sharp lines are tentatively explained by some impurities bound to point defects or SFs. The origin of two Mg related acceptor bound exciton (ABE) peaks in the emission spectra is also proposed: narrower ABE1 peak at 3.466 eV is identified as coming from a substitutional Mg atom. Broader emission at 3.454 eV is deemed to be coming from a Mg acceptor atom perturbed by a nearby SF. Additionally, Mg cluster formation in the highest doped sample ([Mg] = 1×1020 cm-3) was revealed by APT. Simultaneous doping by Si and O was studied for HVPE grown bulk GaN. Doping with O concentration from 1017 cm-3 leads to a decrease in the Si concentration to less than 1016 cm-3. Si incorporation is believed to be suppressed by the competing Ga-vacancy-O incorporation process. Bandgap narrowing by 6 meV due to high doping was observed. Donor bound exciton (DBE) lifetime was obtained from TPRL experimental data and it is found to decrease with increasing doping. In non-polar m-plane homoepitaxial GaN Si doping influences the SF-related luminescence. At moderate Si concentrations excitons are bound to the impurity atoms or impurity-SF complex. Proximity of impurity atoms changes the potential for SF creating localization for charge carriers resulting in SF-related emission. At dopant concentrations higher than the Mott limit screening destroys the carrier interaction and, thus, the exciton localization at impurity-SF complex. Finally, C-doped HVPE grown bulk GaN layers were studied by TEM, CL, and TRPL. Enhanced yellow line (YL) luminescence was observed with increasing C doping. Stability of YL in a wide temperature range (5-300 K) confirms that YL is due to a deep defect, likely CN-ON complex. Low-temperature CL mapping reveals a pit-like structure with different luminescence properties in different areas. DBE emission dominates in CL spectra within the pits while in pit-free areas, in contrast, two ABE lines typical for Mg-doped GaN are observed.
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Harrison, Mark J. "The effects of using aliovalent doping in cerium bromide scintillation crystals." Diss., Manhattan, Kan. : Kansas State University, 2009. http://hdl.handle.net/2097/1322.

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Bradley, I. V. "Interdiffusion of III-V semiconductors heterostructures : effects of ion implantation and doping." Thesis, University of Surrey, 1993. http://epubs.surrey.ac.uk/842950/.

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Photoluminescence coupled with repetitive thermal annealing has been used to determine diffusion coefficients for intermixing in In0.2Ga0.8As/GaAs and GaAs/Al0.2Ga0.8As 100A single quantum wells and to study the effects of doping with silicon and beryllium and of ion implantation on the interdiffusion. It has been shown that the diffusion obeys Pick's law and that doping concentrations of beryllium up to 2.5 x 1019 cm-3 and silicon up to 10 18 cm-3 have no effect on the interdiffusion coefficients in either material system. For the In0.2Ga0.8As/GaAs system it was shown that following implantation and annealing there was a fast interdiffusion process which is independent of implant ion species and anneal temperature. This is thought to be due to recovery of the crystals from implant damage. After this rapid process, it was found that neither gallium nor krypton ions had any further effects on the interdiffusion. However, following arsenic implantation an additional enhanced region of interdiffusion coefficient was observed, with diffusion coefficients an order of magnitude greater than that of a control unimplanted sample. This enhancement is thought to be due to the creation of group in vacancies by the implanted arsenic atoms moving onto group V sites. This fast process was transient in nature returning to that of the unimplanted samples after the well has broadened by about 85A. An activation energy for the diffusion process of 3.7 +/- 0.1 eV was measured over a temperature range of 750-1050°C. This was found to be independent of implanted ion or dopant incorporated in the samples, indicating that the same process controls the interdiffusion in all cases. Similar results were found for the GaAs/Al0.2Ga0.8As system.
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Gu, Hang. "Magnetoresistance and doping effects in conjugated polymer-based organic light emitting diodes." Thesis, Queen Mary, University of London, 2015. http://qmro.qmul.ac.uk/xmlui/handle/123456789/8940.

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Magnetoresistance (MR) and doping effects have been investigated in a poly(3-hexylthiophene-2,5-diyl) (P3HT) based organic light emitting diodes. In single device of fixed composition (Au/P3HT/Al as spun and processed in air), the measured MR strongly depends on the drive conditions. The magnetoconductance (MC) varies from negative to positive (-0.4% ≤ MC ≤ 0.4%) with increasing current density, depending on which microscopic mechanism dominates. The negative MC is due to bipolaron based interactions and the positive MC to triplet-polaron based interactions (as confirmed by light emission). Oxygen doping is prevalent in P3HT devices processed in air and the effect of de-doping (by annealing above the glass transition temperature) is investigated on the MC of an Au/P3HT/Al diode. De-doping reduces the current through the device under forward bias by ~3 orders of magnitude, but increases the negative (low current) MC from a maximum of -0.5% pre-annealing to -3% post-annealing. This increased negative MC is consistent with bipolaron theory predictions based on Fermi level shifts and density of states (DoS) changes due to de-doping. The decrease in current density is explained by increased injection barriers at both electrodes also resulting from de-doping. Deliberate chemical doping of P3HT is carried out using pentacene as a hole trap centre. The trapping effect of pentacene is confirmed by reproducible and significant hole mobility-pentacene concentration behaviour, as measured by dark injection (DI) transient measurements. The enhanced carrier injection resulting from the pentacene doping also leads to increased electroluminescence (EL). The resultant MC in pentacene doped devices is strongly dependent on carrier injection and can be significantly enhanced by doping, for example from -0.2% to -0.6% depending on device and drive conditions. Throughout this thesis Lorentzian and non-Lorentzian function fitting is carried out on the measured MC, although the underlying microscopic mechanisms cannot always be discerned.
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Crowley, Kyle McKinley. "Electrical Characterization, Transport, and Doping Effects in Two-Dimensional Transition Metal Oxides." Case Western Reserve University School of Graduate Studies / OhioLINK, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=case1597327584506971.

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Modarresi, M., M. R. Roknabadi, N. Shahtahmasbi, and M. Mirhabibi. "Many body effects on the transport properties of a doped nano device." Thesis, Sumy State University, 2011. http://essuir.sumdu.edu.ua/handle/123456789/20568.

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In this article, we study the effect of electron-electron interaction in a doped nano cluster sandwich between two electrodes. The Hamiltonian of the cluster is written in the tight-binding model and electrodes are described in the wide-band approximation. The GW approximation has been used for the calculation of the exchange-correlation term in the cluster region. Our results showed that in the presence of the electronelectron interaction the transmittance gap increases and current decreases. Also, in a doped nano structure the transmission decreases and many body effect becomes more important. By considering the exchange-correlation in a doped nano cluster in the GW approximation the transmission and current decrease drastically. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/20568
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Books on the topic "Doping Effects"

1

Doping in sports. Berlin: Springer, 2010.

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Duenow, Joel N. ZnO:Al doping level and hydrogen growth ambient effects on CIGS solar cell performance: Preprint. Golden, Colo: National Renewable Energy Laboratory, 2008.

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Kobayashi, Tatsuya. Study of Electronic Properties of 122 Iron Pnictide Through Structural, Carrier-Doping, and Impurity-Scattering Effects. Singapore: Springer Singapore, 2017. http://dx.doi.org/10.1007/978-981-10-4475-5.

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A, Neugroschel, and United States. National Aeronautics and Space Administration, eds. Heavy doping effects in high efficiency silicon solar cells: Quarterly report for period covering January 1, 1986 - March 31, 1986. [Washington, DC: National Aeronautics and Space Administration, 1986.

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Effects of performance enhancing drugs on the health of athletes and athletic competition: Hearing before the Committee on Commerce, Science, and Transportation, United States Senate, One Hundred Sixth Congress, first session, October 20, 1999. Washington: U.S. G.P.O., 2002.

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Kallings, Peter. Effects of bronchodilating and non-steriodal anti-inflammatory drugs on performance potential in the horse. Uppsala: Sveriges Lantbruksuniversitet, 1998.

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Roland, Shipe James, Savory John 1936-, International Union of Pure and Applied Chemistry., International Federation of Clinical Chemistry., and International Symposium on Drugs in Competitive Athletics (1st : 1988 : Brijuni, Croatia), eds. Drugs in competitive athletics: Proceedings of the First International Symposium held on the islands of Brioni, Yugoslavia 29 May-2 June 1988. Oxford: Blackwell Scientific Publications, 1991.

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United States. Dept. of Health and Human Services. Office of Inspector General. Office of Evaluation and Inspections., ed. Adolescents and steroids: A user perspective. Washington: U.S. Dept. of Health and Human Services, Office of Inspector General, Office of Evaluation and Inspections, 1990.

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Charles, Yesalis, ed. Anabolic steroids in sport and exercise. Champaign, IL: Human Kinetics Publishers, 1993.

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L, Fourcroy Jean, ed. Pharmacology, doping and sports: A scientific guide for athletes, coaches, physicians, scientists and administrators. Abingdon, Oxon: Routledge, 2008.

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Book chapters on the topic "Doping Effects"

1

Street, R. A. "Doping Effects in Amorphous Silicon." In Proceedings of the 17th International Conference on the Physics of Semiconductors, 845–50. New York, NY: Springer New York, 1985. http://dx.doi.org/10.1007/978-1-4615-7682-2_188.

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Petrakova, Vladimira, Miroslav Ledvina, and Milos Nesladek. "Surface Doping of Diamond and Induced Optical Effects." In Optical Engineering of Diamond, 209–38. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2013. http://dx.doi.org/10.1002/9783527648603.ch7.

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Weng, Z. Y., and C. S. Ting. "Doping Effects on the Spin-Density-Wave Background." In Dynamics of Magnetic Fluctuations in High-Temperature Superconductors, 335–46. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4684-7490-9_34.

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Yoshida, N., T. Tatsuki, T. Tamura, S. Adachi, K. Tanabe, S. Fujihara, and T. Kimura. "Effects of High-Valency Cation Doping in HgBa2Ca2Cu3Oy." In Advances in Superconductivity X, 335–38. Tokyo: Springer Japan, 1998. http://dx.doi.org/10.1007/978-4-431-66879-4_78.

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Hiramoto, Masahiro. "Parts-Per-Million-Level Doping Effects and Organic Solar Cells Having Doping-Based Junctions." In Organic Solar Cells, 217–53. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-9113-6_9.

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Al-Suraihy, Ibrahim, Abdellaziz Doghmane, and Zahia Hadjoub. "Investigation of Ag Doping Effects on Na1.5Co2O4 Elastic Parameters." In Damage and Fracture Mechanics, 415–24. Dordrecht: Springer Netherlands, 2009. http://dx.doi.org/10.1007/978-90-481-2669-9_44.

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Matsubara, Ichiro, Toru Ogura, Hiroshi Yamashita, Makoto Kinoshita, and Tomoji Kawai. "Effects of Li-Doping on the Superconductivity of Bi2Sr2Ca2Cu3O10 Whiskers." In Advances in Superconductivity IV, 225–28. Tokyo: Springer Japan, 1992. http://dx.doi.org/10.1007/978-4-431-68195-3_46.

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Zhao, Jing, Cuicui Sun, and Dechang Han. "Effects of Cu doping on SO2 adsorption by α-arsenene." In Advances in Energy, Environment and Chemical Engineering Volume 2, 501–6. London: CRC Press, 2022. http://dx.doi.org/10.1201/9781003363545-71.

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Mertens, R. "Heavy Doping Effects and Their Influence on Silicon Bipolar Transistors." In Semiconductor Silicon, 309–16. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-74723-6_25.

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Cheng, Xin, and Zong Hui Zhou. "Effects of Mn Doping on Dielectric Properties of BSTN Ceramics." In High-Performance Ceramics V, 72–74. Stafa: Trans Tech Publications Ltd., 2008. http://dx.doi.org/10.4028/0-87849-473-1.72.

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Conference papers on the topic "Doping Effects"

1

Volk, T. R., N. M. Rubinina, L. I. Ivleva, and V. A. Kondrat’ev. "Indium Doping Influence on LINBO3 Properties." In Photorefractive Materials, Effects, and Devices II. Washington, D.C.: Optica Publishing Group, 1993. http://dx.doi.org/10.1364/pmed.1993.thb.4.

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Vartanyan, E. S., R. S. Micaelyan, R. K. Hovsepyan, and A. R. Pogosyan. "Mechanisms of photochromic and photorefractive effects in double doped LiNbO3." In Photorefractive Materials, Effects, and Devices II. Washington, D.C.: Optica Publishing Group, 1990. http://dx.doi.org/10.1364/pmed.1990.f2.

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The Lithium niobate crystals doping is effective photo-induced crystals properties influence method. Therefor, this paper was devoted to experimental investigations of photorefractive and photochromic effects in lithium niobate crystals, doping with Fe: Mn, Fe: Cu, Fe9Ti and Fe: Hf impurity combinations. Separately doping with Fe, Cu, Ti, Hf crystals were used for comparison in experiments. The crystal absorbtion spectrums show, that the impurities interact in spite of small concentrations. Photorefractive sensibility determination was corried out with careful in this work.
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Shinada, Takahiro, Masahiro Hori, Yukinori Ono, Keigo Taira, Akira Komatsubara, Takashi Tanii, Tetsuo Endoh, and Iwao Ohdomari. "Reliable single atom doping and discrete dopant effects on transistor performance." In 2010 IEEE International Electron Devices Meeting (IEDM). IEEE, 2010. http://dx.doi.org/10.1109/iedm.2010.5703428.

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Kostritskii, S. M., D. B. Maring, R. F. Tavlykaev, and R. V. Ramaswamy. "Enhancement of the Photorefractive Effect by Er Doping in LiTaO3." In Advances in Photorefractive Materials, Effects and Devices. Washington, D.C.: OSA, 1999. http://dx.doi.org/10.1364/apmed.1999.mc12.

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Iwase, Syohei, Yoshihide Kimishima, and Masatomo Uehara. "Pressure and Cr-Doping Effects of CdCyNi3." In Proceedings of the International Conference on Strongly Correlated Electron Systems (SCES2013). Journal of the Physical Society of Japan, 2014. http://dx.doi.org/10.7566/jpscp.3.015030.

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Haggren, T., J. P. Kakko, H. Jiang, V. Dhaka, T. Huhtio, and H. Lipsanen. "Effects of Zn doping on GaAs nanowires." In 2014 IEEE 14th International Conference on Nanotechnology (IEEE-NANO). IEEE, 2014. http://dx.doi.org/10.1109/nano.2014.6968091.

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Giraldo, Sergio, Markus Neuschitzer, Victor Izquierdo-Roca, Alejandro Perez-Rodriguez, and Edgardo Saucedo. "Doping Effects on Kesterites Other than Alkalis." In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC). IEEE, 2018. http://dx.doi.org/10.1109/pvsc.2018.8548209.

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Haddad, H., L. Forbes, P. Burke, and W. Richling. "Carbon Doping Effects on Hot Electron Trapping." In 28th International Reliability Physics Symposium. IEEE, 1990. http://dx.doi.org/10.1109/irps.1990.363535.

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Borden, P. "Non-destructive Characterizing of Lateral Doping Effects." In CHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY 2005. AIP, 2005. http://dx.doi.org/10.1063/1.2062973.

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Segev, E., and A. Natan. "Effects of multiple atom doping in graphene." In 2017 International Conference on Electromagnetics in Advanced Applications (ICEAA). IEEE, 2017. http://dx.doi.org/10.1109/iceaa.2017.8065530.

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Reports on the topic "Doping Effects"

1

Ovenell, R. Sensitivity Effects of Hollow Glass Micro-Balloon Doping on RDX-Based Explosives. Office of Scientific and Technical Information (OSTI), June 2022. http://dx.doi.org/10.2172/1968547.

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Deis, T. A., N. G. Eror, P. Krishnaraj, B. C. Prorok, M. Lelovic, and U. Balachandran. Effects of low-level Ag doping on Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8+x}. Office of Scientific and Technical Information (OSTI), July 1995. http://dx.doi.org/10.2172/510389.

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Kriz, J. F., J. Monnier, and M. Ternan. Nickel-molybdenum/alumina catalysts: effects of doping with fluoride and lithium and changes in particulate size when applied to bitumen hydroprocessing. Natural Resources Canada/ESS/Scientific and Technical Publishing Services, 1990. http://dx.doi.org/10.4095/304484.

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Espitia, Jose. Doping effect of Al in LLZO. Office of Scientific and Technical Information (OSTI), September 2020. http://dx.doi.org/10.2172/1765793.

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Rudakova, Aida, Tair Bakiev, Alyona Mikheleva, Alexei Emeline, and Kirill Bulanin. Effect of Nb doping on the hydrophilicity of TiO2 thin films. Peeref, June 2023. http://dx.doi.org/10.54985/peeref.2306p5197959.

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Evgeniy, Dryuchkov, Zaporotskova Irina, and Zaporotskov Pavel. Effect of boron doping on sensing properties of CNTS functionalized with nitro group. Peeref, June 2023. http://dx.doi.org/10.54985/peeref.2306p8273508.

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Takase, Y., J. I. Scheinbeim, and B. A. Newman. Effect of TCP Doping on the Remnant Polarization in Uniaxially Oriented Poly(vinylidene Fluoride) Films. Fort Belvoir, VA: Defense Technical Information Center, May 1991. http://dx.doi.org/10.21236/ada237001.

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Balapanov, M. Kh, K. A. Kuterbekov, M. M. Kubenova, R. Kh Ishembetov, B. M. Akhmetgaliev, and R. A. Yakshibaev. Effect of lithium doping on electrophysical and diffusion proper-ties of nonstoichiometric superionic copper selenide Cu1.75Se. Phycal-Technical Society of Kazakhstan, December 2017. http://dx.doi.org/10.29317/ejpfm.2017010203.

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Stambolova, Irina D., Daniela D. Stoyanova, Miroslav V. Abrashev, Vladimir N. Blaskov, Maria G. Shipochka, Sasho V. Vassilev, and Alexander E. Eliyas. Phase Composition and Structure of TiO2 Powders: Effect of Phosphorus Dopant. "Prof. Marin Drinov" Publishing House of Bulgarian Academy of Sciences, September 2019. http://dx.doi.org/10.7546/crabs.2019.09.05.

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COORDINATING RESEARCH COUNCIL INC ATLANTA GA. The Effect of Stadis 450 on MSEP Rating and Coalescence Technical Basis of Re-Doping Turbine Fuels With Stadis 450. Fort Belvoir, VA: Defense Technical Information Center, September 1999. http://dx.doi.org/10.21236/ada373482.

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