Relevant bibliographies by topics / Doping by nitrogen

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Doping by nitrogen'

Author: Grafiati
Published: 28 May 2022
Last updated: 30 May 2022

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Journal articles on the topic "Doping by nitrogen"

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Ngidi, Nonjabulo P. D., Moses A. Ollengo, and Vincent O. Nyamori. "Effect of Doping Temperatures and Nitrogen Precursors on the Physicochemical, Optical, and Electrical Conductivity Properties of Nitrogen-Doped Reduced Graphene Oxide." Materials 12, no. 20 (October 16, 2019): 3376. http://dx.doi.org/10.3390/ma12203376.

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The greatest challenge in graphene-based material synthesis is achieving large surface area of high conductivity. Thus, tuning physico-electrochemical properties of these materials is of paramount importance. An even greater problem is to obtain a desired dopant configuration which allows control over device sensitivity and enhanced reproducibility. In this work, substitutional doping of graphene oxide (GO) with nitrogen atoms to induce lattice–structural modification of GO resulted in nitrogen-doped reduced graphene oxide (N-rGO). The effect of doping temperatures and various nitrogen precursors on the physicochemical, optical, and conductivity properties of N-rGO is hereby reported. This was achieved by thermal treating GO with different nitrogen precursors at various doping temperatures. The lowest doping temperature (600 °C) resulted in less thermally stable N-rGO, yet with higher porosity, while the highest doping temperature (800 °C) produced the opposite results. The choice of nitrogen precursors had a significant impact on the atomic percentage of nitrogen in N-rGO. Nitrogen-rich precursor, 4-nitro-ο-phenylenediamine, provided N-rGO with favorable physicochemical properties (larger surface area of 154.02 m2 g−1) with an enhanced electrical conductivity (0.133 S cm−1) property, making it more useful in energy storage devices. Thus, by adjusting the doping temperatures and nitrogen precursors, one can tailor various properties of N-rGO.
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Jorge, A. Belén, Jordi Fraxedas, Andrés Cantarero, Anthony J. Williams, Jennifer Rodgers, J. Paul Attfield, and Amparo Fuertes. "Nitrogen Doping of Ceria." Chemistry of Materials 20, no. 5 (March 2008): 1682–84. http://dx.doi.org/10.1021/cm7028678.

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Pöykkö, S., M. J. Puska, T. Korhonen, and R. M. Nieminen. "Nitrogen doping in ZnSe." Materials Science and Engineering: B 43, no. 1-3 (January 1997): 1–4. http://dx.doi.org/10.1016/s0921-5107(96)01823-5.

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Granzier-Nakajima, Tomotaroh, Kazunori Fujisawa, Vivek Anil, Mauricio Terrones, and Yin-Ting Yeh. "Controlling Nitrogen Doping in Graphene with Atomic Precision: Synthesis and Characterization." Nanomaterials 9, no. 3 (March 12, 2019): 425. http://dx.doi.org/10.3390/nano9030425.

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Graphene provides a unique platform for the detailed study of its dopants at the atomic level. Previously, doped materials including Si, and 0D-1D carbon nanomaterials presented difficulties in the characterization of their dopants due to gradients in their dopant concentration and agglomeration of the material itself. Graphene’s two-dimensional nature allows for the detailed characterization of these dopants via spectroscopic and atomic resolution imaging techniques. Nitrogen doping of graphene has been well studied, providing insights into the dopant bonding structure, dopant-dopant interaction, and spatial segregation within a single crystal. Different configurations of nitrogen within the carbon lattice have different electronic and chemical properties, and by controlling these dopants it is possible to either n- or p-type dope graphene, grant half-metallicity, and alter nitrogen doped graphene’s (NG) catalytic and sensing properties. Thus, an understanding and the ability to control different types of nitrogen doping configurations allows for the fine tuning of NG’s properties. Here we review the synthesis, characterization, and properties of nitrogen dopants in NG beyond atomic dopant concentration.
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Wang, Zhi Yong. "The Effects of Heteroatom-Doping in Stone-Wales Defects on the Electronic Properties of Graphene Nanoribbons." Advanced Materials Research 463-464 (February 2012): 793–97. http://dx.doi.org/10.4028/www.scientific.net/amr.463-464.793.

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The effects of boron(nitrogen/silicon)-dopant in Stone-Wales defects on electronic properties of graphene nanoribbons are investigated by using density functional theory. It is shown that the geometry structures and band structures have changed distinctly for these complex configurations. Interestingly for the dopant site 1, the distortions of boron/silicon-doping configurations are larger than that of the nitrogen-doping configurations, which affects the band structures of these configurations. The theoretical results may be valuable for the design of electronic devices.
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Namiki, Ryota, Takuya Suyama, Chihiro Izawa, Tomoko Ikeda-Fukazawa, Michiyo Honda, Tomoaki Watanabe, and Mamoru Aizawa. "Chemical State of Nitrogen in Nitrogen-Doped Hydroxyapatite Ceramics with Enhanced Bioactivity." Key Engineering Materials 720 (November 2016): 215–18. http://dx.doi.org/10.4028/www.scientific.net/kem.720.215.

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The chemical state of nitrogen which was induced into crystal structure of hydroxyapatite by nitrogen-doping method (N-doping method) was examined. Determination of lattice constants by powder X-ray diffraction (XRD) showed that the nitrogen species induced by N-doping method substituted the OH- ion in the crystal structure of hydroxyapatite. In addition, Fourier transform infrared spectroscopy (FT-IR) and temperature programmed desorption-mass spectroscopy (TPD-MS) determined that the chemical state of nitrogen induced by N-doping method was N2O.
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Sato, Go, Takahiro Numai, Mitsuo Hoshiyama, Ikuo Suemune, Hideaki Machida, and Norio Shimoyama. "Metalorganic MBE Growth of Nitrogen-doped ZnSe: TAN Doping and Nitrogen Plasma Doping." Japanese Journal of Applied Physics 35, Part 1, No. 2B (February 28, 1996): 1436–39. http://dx.doi.org/10.1143/jjap.35.1436.

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Ewels, C. P., and M. Glerup. "Nitrogen Doping in Carbon Nanotubes." Journal of Nanoscience and Nanotechnology 5, no. 9 (September 1, 2005): 1345–63. http://dx.doi.org/10.1166/jnn.2005.304.

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Burda, Clemens, Yongbing Lou, Xiaobo Chen, Anna C. S. Samia, John Stout, and James L. Gole. "Enhanced Nitrogen Doping in TiO2Nanoparticles." Nano Letters 3, no. 8 (August 2003): 1049–51. http://dx.doi.org/10.1021/nl034332o.

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Sun, Xi Lian, and Hong Tao Cao. "Effects of Nitrogen Doping on Optical Properties of Tungsten Oxide Thin Films." Advanced Materials Research 616-618 (December 2012): 1773–77. http://dx.doi.org/10.4028/www.scientific.net/amr.616-618.1773.

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In depositing nitrogen doped tungsten oxide thin films by using reactive dc pulsed magnetron sputtering process, nitrous oxide gas (N2O) was employed instead of nitrogen (N2) as the nitrogen dopant source. The nitrogen doping effect on the structural and optical properties of WO3 thin films was investigated by X-ray diffraction, transmission electron microscopy and UV-Vis spectroscopy. The thickness, refractive index and optical band gap energy of these films have been determined by analyzing the SE spectra using parameterized dispersion model. Morphological images reveal that the films are characterized by a hybrid structure comprising nanoparticles embeded in amorphous matrix and open channels between the agglomerated nanoparticles. Increasing nitrogen doping concentration is found to decrease the optical band gap energy and the refractive index. The reduced band gaps are associated with the N 2p orbital in the N-doped tungsten oxide films.
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Dissertations / Theses on the topic "Doping by nitrogen"

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Liu, Jia. "Optical spectroscopic study of GaAs with dilute nitrogen doping /." View Abstract or Full-Text, 2002. http://library.ust.hk/cgi/db/thesis.pl?PHYS%202002%20LIU.

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Wellenius, Patrick. "Nitrogen Doping and Ion Beam Processing of Zinc Oxide Thin Films." NCSU, 2006. http://www.lib.ncsu.edu/theses/available/etd-01042006-015801/.

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The modification of single crystal epitaxial ZnO thin films grown by Pulsed Laser Deposition on c-axis oriented sapphire substrates by Ion Beam Processing was investigated. Nitrogen doping of the films was attempted using nuclear transmutation using the 16O (3He, 4He) 15O reaction at 6.6 MeV. The 15O product is unstable and decays to 15N after several minutes by positron emission. There are several potential advantages to using nuclear transmutation including producing nitrogen atoms on the correct lattice site for doping and reduced crystal damage as compared to conventional ion beam implantation. In the experiments in this thesis the doping levels achieved ~1014 cm-3 were too low to be expected to dope the films to p-type. However several beneficial effects due to the ion beam processing were observed, including large increases in resistivity, reduction of defect luminescence, and substantial increases in the response of photoconductive detectors. In addition to desired effects in some films it was also found that in some films bubble like structures approximately 10 ìm in diameter were formed where the thin film delaminated from the surface. It was assumed that mechanism for the bubble formation was the build up of helium gas at the sapphire/ZnO interface.
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Moldovan, Monica. "Photoluminescence investigation of compensation in nitrogen doped ZnSe." Morgantown, W. Va. : [West Virginia University Libraries], 1999. http://etd.wvu.edu/templates/showETD.cfm?recnum=740.

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Thesis (Ph. D.)--West Virginia University, 1999.
Title from document title page. Document formatted into pages; contains xiv, 154 p. : ill. Includes abstract. Includes bibliographical references (p. 148-154).
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Mawudoku, Daniel, George Affadu_Danful, Caitlin Millsaps, and Gregory Bishop. "Immobilization of Electrocatalytically Active Gold Nanoparticles on Nitrogen-Doped Carbon Fiber Electrodes." Digital Commons @ East Tennessee State University, 2019. https://dc.etsu.edu/asrf/2019/schedule/106.

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Immobilization of Electrocatalytically Active Gold Nanoparticles on Nitrogen-Doped Carbon Fiber Electrodes ABSTRACT Recently, immobilization of single metal nanoparticles on nanometer-sized electrodes has been demonstrated as a means to electrochemically probe the relationship between nanoparticle structure and function. Such studies of individual, isolated nanoparticles enable investigation of electrochemical behavior and electrocatalytic properties in the absence of complicating factors like interparticle distance and nanoparticle loading that are typically associated with collections of particles distributed on electrode supports. However, interpretation of electrochemical data obtained from single nanoparticle immobilization experiments can also be difficult since the underlying nanoelectrode platform can sometimes contribute to the measured current or the immobilization strategy may have adverse effects on electron transfer. Here we report immobilization of gold nanoparticles on relatively catalytically inert carbon fiber ultramicro- and nanoelectrodes through a modification method based on recently reported soft nitriding process found to be effective in attaching ligand-free ultrasmall noble metal catalysts to activated carbons. X-ray photoelectron spectroscopy results reveal that the nitriding of carbon fibers provides 3.5 times increase in surface nitrogen content, introducing mostly pyridinic and amine nitrogen groups. The nitrogen-containing surface sites proved to be beneficial to the deposition of gold nanoparticles (AuNPs), as sodium borohydride reduction of tetrachloroaurate resulted in attachment of AuNPs on nitrided carbon fiber ultramicroelectrodes (N-CF-UMEs) in as little as 10 seconds while immobilization of AuNPs on unmodified CF-UMEs required at least 12 hours. A recently reported electrochemical method was employed to characterize immobilized AuNPs, and AuNP size was found to be directly related to deposition time. AuNPs immobilized on N-CF-UMEs also exhibited electrocatalytic activity towards methanol oxidation. Reduction of electrode size will enable this strategy to be employed to investigate electrochemical behavior of individual gold nanoparticles, while the ligand-free nature of the immobilized particles also provides the opportunity to investigate effects of surface capping agents on electrocatalytic properties.
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Chindanon, Kritsa. "Nitrogen doping in low temperature halo-carbon homoepitaxial growth of 4H-silicon carbide." Master's thesis, Mississippi State : Mississippi State University, 2008. http://library.msstate.edu/etd/show.asp?etd=etd-07102008-045510.

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Villalpando, Paéz Federico. "Effects of doping single and double walled carbon nanotubes with nitrogen and boron." Thesis, Massachusetts Institute of Technology, 2006. http://hdl.handle.net/1721.1/36215.

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Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2006.
Includes bibliographical references (p. 135-143).
Controlling the diameter and chirality of carbon nanotubes to fine tune their electronic band gap will no longer be enough to satisfy the growing list of characteristics that future carbon nanotube applications are starting to require. Controlling their band gap, wall reactivity and mechanical properties is imperative to make them functional. The solution to these challenges is likely to lie in smart defect engineering. Defects of every kind can induce significant changes on the intrinsic properties of carbon nanotubes. In this context, this thesis analyzes the effects of doping single and double walled carbon nanotubes with nitrogen and boron. We describe the synthesis of N-doped single-walled carbon nanotubes (N-SWNTs), that agglomerate in bundles and form long strands (<10cm), via the thermal decomposition of ferrocene/ethanol/benzylamine (FEB) solutions in an Ar atmosphere at 950°C. Using Raman spectroscopy, we noted that as the N content is increased in the starting FEB solution, the growth of large diameter tubes is inhibited. We observed that the relative electrical conductivity of the strands increases with increasing nitrogen concentration. Thermogravimetric analysis (TGA) showed novel features for highly doped tubes, that are related to chemical reactions on N sites.
(cont.) We also carried out resonance Raman studies of the coalescence process of double walled carbon nanotubes in conjunction with high resolution transmission electron microscope (HRTEM) experiments on the same samples, heat treated to a variety of temperatures and either undoped or Boron doped. As the heat treatment temperatures are increased (to 1300°C) a Raman mode related to carbon-carbon chains (w = 1855cm-1) is observed before DWNT coalescence occurs. These chains are expected to be 3-5 atoms long and they are established covalently between adjacent DWNTs. The sp carbon chains trigger nanotube coalescence via a zipper mechanism and the chains disappear once the tubes merge. Other features of the Raman spectra were analyzed as a function of heat treatment with special emphasis on the metallic or semiconducting nature of the layers constituting the DWNTs. DWNTs whose outer wall is metallic tend to interact more with the dopant and their outer tubes are the predominant contributors to the line shape of the G and G' bands.
(cont.) The metallic or semiconducting nature of the layers of the DWNTs does not affect their coalescence temperature. All the experiments and analysis presented in this thesis are the result of a collaborative effort between Professor Dresselhaus' group at MIT and its international collaborators, including Professor Endo's group at Shinshu University, Nagano, Japan, Professors Pimenta's and Jorio's group at the Federal University of Minas Gerais, Belo Horizonte, Brazil, and Professors M. and H. Terrones' group at IPICYT, San Luis Potosi, Mexico.
by Federico Villalpando Paéz.
S.M.
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Kuo, Ming-Tsun. "Field emission and annealing studies of n-type doped hydrogenated amorphous carbon films." Thesis, University of Bristol, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.340300.

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Sanwick, Alexis. "Heteroatom-Doped Chemical Vapor Deposition Carbon Ultramicroelectrodes." Digital Commons @ East Tennessee State University, 2020. https://dc.etsu.edu/honors/592.

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Metal nanoparticles have been a primary focus in areas of catalysis and electrocatalysis applications as a result of their large surface area-to-volume ratios. While there is an increased interest in understanding the properties and behaviors of metal nanoparticles, they can become expensive over time. Recent research has incorporated the idea of using heteroatom-doped materials as a cheaper catalytic alternative to metal nanoparticles. In this study nitrogen-doping and phosphorous-doping techniques were applied to chemical vapor-deposited carbon ultramicroelectrodes in order to study the electrocatalytic properties toward the oxygen reduction reaction and the enhanced affinity for the deposition of gold nanoparticles onto the electrodes.
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Wornyo, Eric. "Nitrogen-Doped Carbon Fiber Ultramicroelectrodes as Electrochemical Sensors for Detection of Hydrogen Peroxide." Digital Commons @ East Tennessee State University, 2021. https://dc.etsu.edu/etd/3960.

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Carbon fiber ultramicroelectrodes (CF-UMEs) are commonly used as electrochemical probes and sensors due to their small size, fast response, and high signal-to-noise ratio. Surface modification strategies are often employed on CF-UMEs to improve their selectivity and sensitivity for desired applications. However, many modification methods are cumbersome and require expensive equipment. In this study, a simple approach known as soft nitriding is used to prepare nitrogen-doped CF-UMEs (N-CF-UMEs). Nitrogen groups introduced via soft nitriding act as electrocatalytic sites for the breakage of O-O bonds during the reduction of peroxides like H2O2, a common target of biosensing strategies. Voltammetric studies confirm that, compared to CF-UMEs, N-CF-UMEs possess enhanced electrocatalytic activity towards H2O2 reduction as evidenced by an increase in current and positive shift in onset potential for the reaction. N-CF-UMEs also proved capable for amperometric detection of H2O2, exhibiting good linear response from 0.1 to 5.6 mM at -0.4 V vs. Ag/AgCl.
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Correa, Washington Luiz Alves. "Contribuição para a sintese de diamante com dopagens de boro, nitrogenio ou enxofre." [s.n.], 2004. http://repositorio.unicamp.br/jspui/handle/REPOSIP/260578.

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Orientador: Vitor Baranauskas
Tese (doutorado) - Universidade Estadual de Campinas, Faculdade de Engenharia Eletrica e de Computação
Made available in DSpace on 2018-08-05T18:10:58Z (GMT). No. of bitstreams: 1 Correa_WashingtonLuizAlves_D.pdf: 3351242 bytes, checksum: 8f30a26c68d4c1e73a72d065eaedb4f9 (MD5) Previous issue date: 2004
Resumo: Estudamos processos de dopagem do diamante crescido por deposição química a partir da fase vapor (diamante CVD) com a introdução de impurezas dopantes durante o crescimento do diamante em reatores do tipo filamento-quente. Focalizamos nossa pesquisa na dopagem do diamante com boro, ou nitrogênio, ou enxofre, visando obter diamantes com propriedades semicondutoras com condutividade eletrônica (tipo n) ou condutividade por lacunas (tipo p). Foram utilizadas contaminações intencionais utilizando: trimetil borano (B(CH3)3), ou amônia (NH3), ou dissulfeto de carbono (CS2), misturados com metano e diluídos em hidrogênio. As amostras foram caracterizadas por microscopia eletrônica de varredura (SEM), espectroscopia Raman, espectroscopia de foto-elétrons excitados por raios X (XPS), espectroscopia de emissão de raios X excitado por feixe de prótons (PIXE) e efeito Hall. As dopagens do diamante do tipo p e do tipo n foram obtidas com contaminações de boro e enxofre, respectivamente. O diamante dopado com nitrogênio não apresentou propriedades semicondutoras
Abstract: We studied the diamond doping processes with introduction of doping impurities during the diamond growth in the chemical vapor deposition (CVD) technique, using a hot-filament reactor. Our research focused the use of boron, nitrogen or sulphur atoms in order to obtain diamond films with semiconductor properties of electronic (n-type) or hole (p-type) current transport mechanisms. Trimethyl-borane (B(CH3)3), or ammonia, or carbon disulphide (CS2), mixed with methane and hydrogen were used in the feed gas mixture. The diamond samples were characterized by scanning electron microscopy (SEM), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), Proton-induced X-ray emission (PIXE) and Hall effect. p-type and n-type diamonds have been obtained with boron and sulphur doping, respectively. However, the nitrogen doped samples do not presented semiconductor properties
Doutorado
Engenharia de Eletronica e Comunicações
Doutor em Engenharia Elétrica
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Books on the topic "Doping by nitrogen"

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United States. National Aeronautics and Space Administration., ed. Site-competition epitaxy for n-type and p-type dopant control in CVD SiC epilayers. [Washington, DC: National Aeronautics and Space Administration, 1995.

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United States. National Aeronautics and Space Administration., ed. Site-competition epitaxy for n-type and p-type dopant control in CVD SiC epilayers. [Washington, DC: National Aeronautics and Space Administration, 1995.

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United States. National Aeronautics and Space Administration., ed. Site-competition epitaxy for n-type and p-type dopant control in CVD SiC epilayers. [Washington, DC: National Aeronautics and Space Administration, 1995.

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United States. National Aeronautics and Space Administration., ed. Site-competition epitaxy for n-type and p-type dopant control in CVD SiC epilayers. [Washington, DC: National Aeronautics and Space Administration, 1995.

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Book chapters on the topic "Doping by nitrogen"

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Saurov, Alexandr, Sergey Bulyarskiy, Darya A. Bogdanova, and Alexandr Pavlov. "Nitrogen Interaction with Carbon Nanotubes: Adsorption and Doping." In Doping of Carbon Nanotubes, 115–69. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-55883-7_5.

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Hu, Yating. "Nitrogen Doping of Mesoporous Carbon Materials." In Springer Theses, 35–47. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-10-8342-6_3.

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Rost, H. J., D. Schulz, and D. Siche. "High Nitrogen Doping During Bulk Growth of SiC." In Silicon Carbide, 163–78. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-642-18870-1_7.

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Govindaraj, Achutharao, and C. N. R. Rao. "Doping of Graphene by Nitrogen, Boron, and Other Elements." In Functionalization of Graphene, 283–358. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2014. http://dx.doi.org/10.1002/9783527672790.ch10.

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Kuo, Chin-Lung, and Yu-Jen Tsai. "Effect of Nitrogen Doping on the Li-Storage Capacity of Graphene Nanomaterials." In Lithium-Ion Batteries and Solar Cells, 45–58. First edition. | Boca Raton, FL : CRC Press/ Taylor & Francis Group, LLC, 2021.: CRC Press, 2020. http://dx.doi.org/10.1201/9781003138327-3.

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Guo, Wei, and Tingli Ma. "Nanostructured Nitrogen Doping TiO2 Nanomaterials for Photoanodes of Dye-Sensitized Solar Cells." In Green Energy and Technology, 55–75. London: Springer London, 2014. http://dx.doi.org/10.1007/978-1-4471-6473-9_3.

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Kato, Tomohisa, Tomonori Miura, Keisuke Wada, Eiji Hozomi, Hiroyoshi Taniguchi, Shin Ichi Nishizawa, and Kazuo Arai. "Defect and Growth Analysis of SiC Bulk Single Crystals with High Nitrogen Doping." In Materials Science Forum, 239–42. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-442-1.239.

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Siche, D., M. Albrecht, J. Doerschel, K. Irmscher, H. J. Rost, M. Rossberg, and D. Schulz. "Effect of Nitrogen Doping on the Formation of Planar Defects in 4H-SiC." In Materials Science Forum, 39–42. Stafa: Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/0-87849-963-6.39.

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Fu, Xiao An, Jacob Trevino, M. Mehregany, and Christian A. Zorman. "Nitrogen-Doping of Polycrystalline 3C-SiC Films Deposited by Low Pressure Chemical Vapor Deposition." In Silicon Carbide and Related Materials 2005, 311–14. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.311.

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Kim, Kwan Mo, Soo Hyung Seo, Jae Woo Kim, Joon Suk Song, Myung Hwan Oh, Wook Bahng, and Eun Dong Kim. "The Method for Enhancing Nitrogen Doping in 6H-SiC Single Crystals Grown by Sublimation Process: The Effect of Si Addition in SiC Powder Source." In Silicon Carbide and Related Materials 2005, 55–58. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.55.

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Conference papers on the topic "Doping by nitrogen"

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Ikeda, A., D. Marui, H. Ikenoue, and T. Asano. "Nitrogen doping of 4H-SiC by excimer laser irradiation in liquid nitrogen." In 2014 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2014. http://dx.doi.org/10.7567/ssdm.2014.n-1-1.

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Zhou, Yingke, Robert Pasquarelli, Joe Berry, David Ginley, and Ryan O’Hayre. "Improving PEM Fuel Cell Catalysts Using Nitrogen-Doped Carbon Supports." In ASME 2008 6th International Conference on Fuel Cell Science, Engineering and Technology. ASMEDC, 2008. http://dx.doi.org/10.1115/fuelcell2008-65172.

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This study experimentally examines the effect of nitrogen doping on the activity of Pt/C catalyst systems. The investigation was accomplished through the development of geometrically well-defined model catalytic systems consisting of tunable assemblies of Pt catalyst nanoparticles deposited onto both N-doped and undoped highly-oriented pyrolytic graphite (HOPG) substrates. N-doping was achieved via ion beam implantation, and Pt was electrodeposited from solutions of H2PtCl6 in aqueous HClO4. Morphology from scanning electron microscopy (SEM) and catalytic activity measurement from aqueous electrochemical analysis were utilized to examine the N-doping effects. The results strongly support the theory that doping nitrogen into a graphite support significantly affects both the morphology and behavior of the overlying Pt nanoparticles. In particular, nitrogen-doping was observed to cause a significant decrease in the average Pt nanoparticle size, an increase in the Pt nanoparticle dispersion, and a significant increase in catalytic activity for both methanol oxidation and oxygen reduction.
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Mano, Takaaki, Masafumi Jo, Takashi Kuroda, Martin Elborg, Takeshi Noda, Yoshimasa Sugimoto, Yoshiki Sakuma, and Kazuaki Sakoda. "Nitrogen-concentration control in GaNAs/AlGaAs quantum wells using nitrogen δ-doping technique." In 7TH INTERNATIONAL CONFERENCE ON LOW DIMENSIONAL STRUCTURES AND DEVICES: (LDSD 2011). AIP Publishing LLC, 2014. http://dx.doi.org/10.1063/1.4878293.

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O’Hayre, Ryan, Yingke Zhou, Robert Pasquarelli, Joe Berry, and David Ginley. "Enhancement of Pt-Based Catalysts via N-Doped Carbon Supports." In ASME 2008 3rd Energy Nanotechnology International Conference collocated with the Heat Transfer, Fluids Engineering, and Energy Sustainability Conferences. ASMEDC, 2008. http://dx.doi.org/10.1115/enic2008-53078.

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This study experimentally examines the enhancement of carbon supported Pt-based catalysts systems via nitrogen doping. It has been reported that nitrogen-containing carbons promote significant enhancement in Pt/C catalyst activity and durability with respect to the methanol oxidation and oxygen reduction reactions. In order to systematically investigate the effect of N-doping, in this work we have developed geometrically well-defined model catalytic systems consisting of tunable assemblies of Pt catalyst nanoparticles deposited onto both N-doped and undoped highly-oriented pyrolytic graphite (HOPG) substrates. N-doping was achieved via ion beam implantation, and Pt was electrodeposited from solutions of H2PtCl6 in aqueous HClO4. Morphology from scanning electron microscopy (SEM) and catalytic activity measurement from aqueous electrochemical analysis were utilized to examine the N-doping effects. The results strongly support the theory that doping nitrogen into a graphite support significantly affects both the morphology and behavior of the overlying Pt nanoparticles. In particular, nitrogen-doping was observed to cause a significant decrease in the average Pt nanoparticle size, an increase in the Pt nanoparticle dispersion, and a significant increase in catalytic activity for both methanol oxidation and oxygen reduction.
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Honjo, M., N. Komatsu, C. Kimura, and H. Aoki. "Influence of Nitrogen Doping on the LaAlO Film Properties." In 2010 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2010. http://dx.doi.org/10.7567/ssdm.2010.h-1-4.

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Kageshima, H., A. Taguchi, and K. Wada. "Theoretical Comparison of the Effects of Nitrogen-Doping and Oxygen-Doping on Silicon Crystal Growth." In PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006. AIP, 2007. http://dx.doi.org/10.1063/1.2729749.

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Makimoto, Toshiki, Hisao Saito, and Naoki Kobayashi. "Origin of Nitrogen-Pair Luminescence in GaAs Studied by Nitrogen Atomic-Layer-Doping in MOVPE." In 1996 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1996. http://dx.doi.org/10.7567/ssdm.1996.c-4-1.

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Okada, Takeru, and Seiji Samukawa. "Selective nitrogen doping of graphene by energy-controlled neutral beam." In 2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO). IEEE, 2015. http://dx.doi.org/10.1109/nano.2015.7388856.

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Murota, Junichi, Masao Sakuraba, and Bernd Tillack. "Atomically controlled processing for nitrogen doping of group IV semiconductors." In 2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT). IEEE, 2014. http://dx.doi.org/10.1109/icsict.2014.7021213.

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Sen, Banani, and B. L. Yang. "Electrical characteristics and reliability of hafnium oxide films with nitrogen doping." In 2008 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC). IEEE, 2008. http://dx.doi.org/10.1109/edssc.2008.4760707.

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Reports on the topic "Doping by nitrogen"

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Fermi Research Alliance, Fermi Alliance. Development of High-Q SRF Structures by Nitrogen Doping for Superconducting Electron Linacs. Office of Scientific and Technical Information (OSTI), September 2019. http://dx.doi.org/10.2172/1568827.

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