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1

Vollenweider, Kilian. Dopant clustering and diffusion in silicon. Konstanz: Hartung-Gorre, 2010.

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2

1955-, Gibson Ursula Jane, White Alice E, and Pronko Peter P, eds. Materials modification and growth using Ion beams: Symposium held April 21-23, 1987, Anaheim, California, U.S.A. Pittsburgh, Pa: Materials Research Society, 1987.

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3

Impurities in semiconductors: Solubility, migration, and interactions. Boca Raton: CRC Press, 2004.

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4

Baudrant, Annie. Silicon technologies: Ion implantation and thermal treatment. London: ISTE, 2011.

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5

Kaschieva, S. Radiation defects in ion implanted and/or high-energy irradiated MOS structures. New York: Nova Science Publishers, 2010.

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6

Jones, Erin C., Kevin S. Jones, Martin D. Giles, Peter Stolk, and Jiro Matsuo. Si Front-End Processing : Volume 669: Physics and Technology of Dopant-Defect Interactions III. University of Cambridge ESOL Examinations, 2014.

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7

Doping: Properties, Mechanisms and Applications. Nova Science Pub Inc, 2013.

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8

Kar, Pradip. Doping in Conjugated Polymers. Wiley & Sons, Incorporated, John, 2013.

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9

Kar, Pradip. Doping in Conjugated Polymers. Wiley & Sons, Incorporated, John, 2013.

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10

Kar, Pradip. Doping in Conjugated Polymers. Wiley & Sons, Limited, John, 2013.

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11

Kar, Pradip. Doping in Conjugated Polymers. Wiley & Sons, Incorporated, John, 2013.

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12

Kar, Pradip. Doping in Conjugated Polymers. Wiley-Interscience, 2013.

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13

Kar, Pradip. Doping in Conjugated Polymers. Wiley & Sons, Incorporated, John, 2013.

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14

Fair, Richard B., Charles W. Pearce, and Jack Washburn. Impurity Diffusion and Gettering in Silicon: Volume 36. University of Cambridge ESOL Examinations, 2014.

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15

Agajanian, A. H. Ion Implantation in Microelectronics: A Comprehensive Bibliography. Springer, 2012.

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16

B, Fair Richard, Pearce Charles W, Washburn Jack 1921-, Materials Research Society Meeting, and Symposium on Impurity Diffusion and Gettering in Semiconductors (1984 : Boston, Mass.), eds. Impurity diffusion and gettering in silicon: Symposium held November 27-30, 1984, Boston, Massachusetts, U.S.A. Pittsburgh, Pa: Materials Research Society, 1985.

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17

Fistul, Victor I. Impurities in Semiconductors: Solubility, Migration and Interactions. CRC, 2004.

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18

Fistul, Victor I. Impurities in Semiconductors: Solubility, Migration and Interactions. Taylor & Francis Group, 2004.

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19

Fistul, Victor I. Impurities in Semiconductors: Solubility, Migration and Interactions. Taylor & Francis Group, 2004.

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20

Fistul, Victor I. Impurities in Semiconductors: Solubility, Migration and Interactions. Taylor & Francis Group, 2004.

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21

Fistul, Victor I. Impurities in Semiconductors: Solubility, Migration and Interactions. Taylor & Francis Group, 2004.

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22

Fistul, Victor I. Impurities in Semiconductors: Solubility, Migration and Interactions. Taylor & Francis Group, 2004.

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23

Baudrant, Annie. Silicon Technologies: Ion Implantation and Thermal Treatment. Wiley & Sons, Incorporated, John, 2011.

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24

Baudrant, Annie. Silicon Technologies: Ion Implantation and Thermal Treatment. Wiley & Sons, Incorporated, John, 2013.

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25

Defects and diffusion in silicon processing: Symposium held April 1-4, 1997, San Francisco, California, U.S.A. Pittsburgh, Pa: Materials Research Society, 1997.

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26

Tomas Diaz De LA Rubia (Editor), Salvatore Coffa (Editor), Peter A. Stolk (Editor), and Conor S. Rafferty (Editor), eds. Defects and Diffusion in Silicon Processing: Symposium Held April 1-4, 1997, San Francisco, California, U.S.A (Materials Research Society Symposia Proceedings, V. 469.). Materials Research Society, 1997.

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