Relevant bibliographies by topics / Dopant diffusion

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Dopant diffusion'

Author: Grafiati
Published: 4 June 2021
Last updated: 20 February 2023

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Journal articles on the topic "Dopant diffusion"

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Bracht, Hartmut, S. Brotzmann, and Alexander Chroneos. "Impact of Carbon on the Diffusion of Donor Atoms in Germanium." Defect and Diffusion Forum 289-292 (April 2009): 689–96. http://dx.doi.org/10.4028/www.scientific.net/ddf.289-292.689.

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We report experiments on the diffusion of n-type dopants in isotopically controlled Ge multilayer structures doped with carbon. The diffusion profiles reveal a strong aggregation of the dopants within the carbon-doped layers and a retarded penetration depth compared to dopant diffusion in high purity natural Ge. Dopant aggregation and diffusion retardation is strongest for Sb and similar for P and As. Successful modeling of the simultaneous self- and dopant diffusion is performed on the basis of the vacancy mechanism and additional reactions that take into account the formation of carbon-vacancy-dopant and dopant-vacancy complexes. The stability of these complexes is confirmed by density functional theory calculations. The overall consistency between experimental and theoretical results supports the stabilization of donor-vacancy complexes in Ge by the presence of carbon and the dopant deactivation via the formation of dopant-vacancy complexes. These results help to develop concepts to suppress the enhanced diffusion of n-type dopants and the donor deactivation in Ge. Both issues hamper the formation of ultra shallow donor profiles with high active dopant concentrations that are required for the fabrication of Ge-based n-type metal oxide semiconductor field effect transistors.
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Khina, Boris B. "Extended 'Five-Stream' Model for Diffusion of Implanted Dopants in Silicon during Ultra-Shallow Junction Formation in VLSI Circuits." Defect and Diffusion Forum 277 (April 2008): 107–12. http://dx.doi.org/10.4028/www.scientific.net/ddf.277.107.

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Ion implantation of different dopants (donors and acceptors) into crystalline silicon with subsequent thermal annealing is used for the formation of ultra-shallow p-n junctions in VLSI technology. The experimentally observed phenomenon of transient enhanced diffusion (TED) during annealing hinders further downscaling of advanced VLSI circuits. However, modern mathematical models of dopant diffusion, which are based on the so-called “five-stream” approach, and software packages such as SUPREM4 encounter difficulties in describing TED. In this work, an extended five-stream model for diffusion in silicon is developed, which takes into account all the possible charge states of point defects (vacancies and silicon self-interstitials) and diffusing pairs “dopant atom–vacancy” and “dopant atom–silicon self-interstitial”. The model includes diffusion and drift of differently charged point defects and pairs in the internal electric field and the kinetics of interaction between unlike species. The expressions for diffusion fluxes and sink/source terms that appear in the non-linear, non-steady-state reaction-diffusion equations are derived for both donor and acceptor dopants accounting for multiple charge states of the diffusing species.
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Drabczyk, Kazimierz, Edyta Wróbel, Grazyna Kulesza-Matlak, Wojciech Filipowski, Krzysztof Waczynski, and Marek Lipinski. "Comparison of diffused layer prepared using liquid dopant solutions and pastes for solar cell with screen printed electrodes." Microelectronics International 33, no. 3 (August 1, 2016): 167–71. http://dx.doi.org/10.1108/mi-03-2016-0031.

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Purpose The purpose of this study is comparison of the diffusion processes performed using the commercial available dopant paste made by Filmtronics and the original prepared liquid dopant solution. To decrease prices of industrially produced silicon-based solar cells, the new low-cost production processes are necessary. The main components of most popular silicon solar cells are with diffused emitter layer, passivation, anti-reflective layers and metal electrodes. This type of cells is prepared usually using phosphorus oxychloride diffusion source and metal pastes for screen printing. The diffusion process in diffusion furnace with quartz tube is slow, complicated and requires expensive equipment. The alternative for this technology is very fast in-line processing using the belt furnaces as an equipment. This approach requires different dopant sources. Design/methodology/approach In this work, the diffusion processes were made for two different types of dopant sources. The first one was the commercial available dopant paste from Filmtronics and the second one was the original prepared liquid dopant solution. The investigation was focused on dopant sources fabrication and diffusion processes. The doping solution was made in two stages. In the first stage, a base solution (without dopants) was made: dropwise deionized (DI) water and ethyl alcohol were added to a solution consisting of tetraethoxysilane (TEOS) and 99.8 per cent ethyl alcohol. Next, to the base solution, orthophosphoric acid dissolved in ethyl alcohol was added. Findings Diffused emitter layers with sheet resistance around 60 Ω/sq were produced on solar grade monocrystalline silicon wafers using two types of dopant sources. Originality/value In this work, the diffusion processes were made for two different types of dopant sources. The first one was the commercial available dopant paste from Filmtronics and the second one was the original prepared liquid dopant solution.
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Pennycook, S. J., R. J. Culbertson, and J. Narayan. "Formation of stable dopant interstitials during ion implantation of silicon." Journal of Materials Research 1, no. 3 (June 1986): 476–92. http://dx.doi.org/10.1557/jmr.1986.0476.

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High concentrations of self-interstitials are trapped by dopant atoms during ion implantation into Si. For group V dopants, these complexes are sufficiently stable to survive solid-phase-epitaxial (SPE) growth but break up on subsequent thermal processing and cause a transientenhanced diffusion. Dopant diffusion coefficients are enhanced by up to five orders of magnitude over tracer values and are characterized by an activation energy of approximately one half of the tracer values. In the case of group III dopants, any complexes formed during implantation do not survive SPE growth but a second source of self-interstitials becomes significant and leads to similar transient effects. This is the damaged layer underlying the original amorphous/crystalline interface. These observations provide direct evidence for longrange self-interstitial migration in Si, and we believe these are the first observations of the interstitialcy diffusion mechanism with no vacancy contribution. We propose that the complexes are simply interstitial dopant atoms (in a split <100> interstitialcy configuration) that are particularly stable in the case of group V dopants. As they decay self-interstitials are released and cause the transient-enhanced diffusion.
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Pankratov, Evgeny L., and Elena A. Bulaeva. "Optimization of spatial dependence of diffusion coefficient for acceleration of dopant diffusion." Multidiscipline Modeling in Materials and Structures 12, no. 4 (November 14, 2016): 672–77. http://dx.doi.org/10.1108/mmms-06-2016-0026.

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Purpose It has been recently shown that diffusion of dopant during doping of inhomogeneous structure could be accelerated or decelerated in comparison with diffusion of dopant in structure with averaged diffusion coefficient. As a continuation of previous work, the purpose of this paper is to introduce an approach of estimating the limited value of acceleration of the dopant diffusion by choosing the dependence of the dopant diffusion coefficient on the coordinates. Design/methodology/approach The authors analyzed relaxation of concentration of dopant during diffusion in inhomogeneous material. The authors determine conditions for maximal acceleration and deceleration of diffusion of dopant. The authors introduced analytical approach for analysis of dopant diffusion in inhomogeneous material. Findings The authors determine conditions for maximal acceleration and deceleration of diffusion of dopant. Originality/value It has been shown that dopant diffusion could be decelerated essentially to a greater extent, rather than accelerated.
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PANKRATOV, E. L. "INFLUENCE OF MECHANICAL STRESS IN A MULTILAYER STRUCTURE ON SPATIAL DISTRIBUTION OF DOPANTS IN IMPLANTED-JUNCTION AND DIFFUSION-JUNCTION RECTIFIERS." Modern Physics Letters B 24, no. 09 (April 10, 2010): 867–95. http://dx.doi.org/10.1142/s0217984910022925.

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The influence of mechanical stress in a multilayer structure on spatial distribution of dopants in implanted-junction and diffusion-junction rectifiers, which was produced in the structure has been analyzed. It is shown that the stress leads to additional reduction of spatial dimensions of the p–n junction in comparison with the reduction — a result of inhomogeneity — of the diffusion coefficient of dopant and other parameters of dopant redistribution (see, for example, Refs. 1–3).
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Sueoka, Koji, Ken Kamimura, and Seiji Shiba. "Systematic Investigation of Gettering Effects on 4th Row Element Impurities in Si by Dopant Atoms." Advances in Materials Science and Engineering 2009 (2009): 1–3. http://dx.doi.org/10.1155/2009/309209.

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The gettering of 4th row element impurities (K, Ca, 3d transition metals, and Zn) in Si crystals by dopant atoms was systematically investigated by first-principles calculation through evaluation of the diffusion barrier and the binding energy. The dopant atoms considered include p-type dopants (B), n-type dopants (P, As, Sb), or light elements (C, O). It was found that (1) the diffusion barrier of impurity atoms decreases with an increase in their atomic number up to Ni, (2) B atom becomes an efficient gettering center for metals except for Ni, (3) most of the metals except for Fe and Co cannot be gettered by n-type dopants, and (4) C and O atoms alone do not become efficient gettering centers for the metals used in actual LSI processes. The vacancy and n-type dopant complexes (P, As, Sb) can be efficient gettering centers for Cu in n/n+ epitaxial wafers.
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An, Dao Khac. "Important Features of Anomalous Single-Dopant Diffusion and Simultaneous Diffusion of Multi-Dopants and Point Defects in Semiconductors." Defect and Diffusion Forum 268 (November 2007): 15–36. http://dx.doi.org/10.4028/www.scientific.net/ddf.268.15.

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This paper summarizes some of the main results obtained concerning aspects of anomalous single-dopant diffusion and the simultaneous diffusion of multi-diffusion species in semiconductors. Some important explanations of theoretical/practical aspects have been investigated, such as anomalous phenomena, general diffusivity expressions, general non-linear diffusion equations, modified Arrhenius equations and lowered activation energy have been offered in the case of the anomalous fast diffusion for single-dopant diffusion process. Indeed, a single diffusion process is always a complex system involving many interacting factors; conventional diffusion theory could not be applied to its investigation. The author has also investigated a system of multi-diffusion species with mutual interactions between them. More concretely, irreversible thermodynamics theory was used to investigate the simultaneous diffusion of dopants (As, B) and point defects (V, I) in Si semiconductors. Some attempts at theory development were made, such as setting up a system of general diffusion equations for the simultaneous diffusion of multi-diffusion species involving mutual interactions between them, such as the pair association and disassociation mechanisms which predominated during the simultaneous diffusion of dopants and point defects. The paper then gives some primary results of the numerical solution of distributions of dopants (B, As) and point defects (V, I) in Si semiconductor, using irreversible thermodynamics theory. Finally, several applications of simultaneous diffusion to semiconductor technology devices are also offered.
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Cowern, Nicholas, and Conor Rafferty. "Enhanced Diffusion in Silicon Processing." MRS Bulletin 25, no. 6 (June 2000): 39–44. http://dx.doi.org/10.1557/mrs2000.97.

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Semiconductor-grade silicon is one of the most perfect crystalline materials that can be fabricated. It contains less than 1 ppb of unintended impurities and negligible twins or dislocations. Dopants can diffuse in this near-ideal crystal only by interacting with atomic-scale point defects: interstitial atoms or vacancies. These defects migrate through the silicon lattice, occasionally binding with a dopant atom and displacing it by one or more lattice positions.
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Kuganathan, Navaratnarajah, Sashikesh Ganeshalingam, and Alexander Chroneos. "Defects, Diffusion, and Dopants in Li2Ti6O13: Atomistic Simulation Study." Materials 12, no. 18 (September 4, 2019): 2851. http://dx.doi.org/10.3390/ma12182851.

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In this study, force field-based simulations are employed to examine the defects in Li-ion diffusion pathways together with activation energies and a solution of dopants in Li2Ti6O13. The lowest defect energy process is found to be the Li Frenkel (0.66 eV/defect), inferring that this defect process is most likely to occur. This study further identifies that cation exchange (Li–Ti) disorder is the second lowest defect energy process. Long-range diffusion of Li-ion is observed in the bc-plane with activation energy of 0.25 eV, inferring that Li ions move fast in this material. The most promising trivalent dopant at the Ti site is Co3+, which would create more Li interstitials in the lattice required for high capacity. The favorable isovalent dopant is the Ge4+ at the Ti site, which may alter the mechanical property of this material. The electronic structures of the favorable dopants are analyzed using density functional theory (DFT) calculations.
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Dissertations / Theses on the topic "Dopant diffusion"

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Christensen, Jens S. "Dopant diffusion in Si and SiGe." Doctoral thesis, KTH, Microelectronics and Information Technology, IMIT, 2004. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3712.

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Dopant diffusion in semiconductors is an interestingphenomenon from both technological and scientific points ofview. Firstly, dopant diffusion is taking place during most ofthe steps in electronic device fabrication and, secondly,diffusion is related to fundamental properties of thesemiconductor, often controlled by intrinsic point defects:self-interstitials and vacancies. This thesis investigates thediffusion of P, B and Sb in Si as well as in strained andrelaxed SiGe. Most of the measurements have been performedusing secondary ion mass spectrometry on high purityepitaxially grown samples, having in-situ incorporated dopantprofiles, fabricated by reduced pressure chemical vapordeposition or molecular beam epitaxy. The samples have beenheat treated both under close-to-equilibrium conditions (i. e.,long time annealings in an inert ambient) and conditions whichresulted in non-equilibrium diffusion (i. e., vacuum annealing,oxidation, short annealing duration, and protonirradiation).

Equilibrium P and B diffusion coefficients in Si asdetermined in this thesis differ from a substantial part ofpreviously reported values. This deviation may be attributed toslow transients before equilibrium concentrations of pointdefects are established, which have normally not been takeninto account previously. Also an influence of extrinsic dopingconditions may account for the scattering of the diffusivityvalues reported in literature. B and Sb diffusion in Si underproton irradiation at elevated temperatures was found to obeythe so-called intermittent model. Parameters describing themicroscopic diffusion process were derived in terms of theintermittent diffusion mechanism, and it was found also thatthe presence of Sb strongly affected the B diffusion and viceversa.

In relaxed Si1-xGex-alloys, which has the same lattice structure as Sibut a larger lattice constant, P diffusion is found to increasewith increasing Ge content (x≤ 0.2). In Si/SiGe/Si heterostructures, wherethe SiGe layer is biaxially strained in order to comply withthe smaller lattice parameter of Si, P diffusion in thestrained layer is retarded as compared with relaxed materialhaving the same Ge content. In addition, P is found tosegregate into the Si layer via the Si/SiGe interface and thesegregation coefficient increases with increasing Ge content inthe SiGe layer.

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Liao, Sheng Zhou. "Long-range lateral dopant diffusion in tungsten silicide layers." Thesis, Queen's University Belfast, 2011. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.534690.

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Chang, Ruey-dar. "Physics and modeling of dopant diffusion for advanced device applications /." Digital version accessible at:, 1998. http://wwwlib.umi.com/cr/utexas/main.

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De, Souza Maria Merlyne. "Atomic level diffusion mechanisms in silicon." Thesis, University of Cambridge, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.319817.

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Ndoye, Coumba. "Characterization of Dopant Diffusion in Bulk and lower dimensional Silicon Structures." Thesis, Virginia Tech, 2010. http://hdl.handle.net/10919/46321.

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The semiconductor industry scaling has mainly been driven by Mooreâ s law, which states that the number of transistors on a single chip should double every year and a half to two years. Beyond 2011, when the channel length of the Metal Oxide Field effect transistor (MOSFET) approaches 16 nm, the scaling of the planar MOSFET is predicted to reach its limit. Consequently, a departure from the current planar MOSFET on bulk silicon substrate is required to push the scaling limit further while maintaining electrostatic control of the gate over the channel. Alternative device structures that allow better control of the gate over the channel such as reducing short channel effects, and minimizing second order effects are currently being investigated. Such novel device architectures such as Fully-Depleted (FD) planar Silicon On Insulator (SOI) MOSFETS, Triple gate SOI MOSFET and Gate-All-Around Nanowire (NW) MOSFET utilize Silicon on Insulator (SOI) substrates to benefit from the bulk isolation and reduce second order effects due to parasitic effects from the bulk. The doping of the source and drain regions and the redistribution of the dopants in the channel greatly impact the electrical characteristics of the fabricated device. Thus, in nano-scale and reduced dimension transistors, a tight control of doping levels and formation of pn junctions is required. Therefore, deeper understanding of the lateral component of the diffusion mechanisms and interface effects in these lower dimensional structures compared to the bulk is necessary. This work focuses on studying the dopant diffusion mechanisms in Silicon nanomembranes (2D), nanoribbons (â 1.Xâ D), and nanowires (1D). This study also attempts to benchmark the 1D and 2D diffusion against the well-known bulk (3D) diffusion mechanisms.
Master of Science
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Hearne, M. T. "Diffusion models for the doping of semiconductor crystals." Thesis, University of Nottingham, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.384711.

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Janke, Colin. "Density functional theory modelling of intrinsic and dopant-related defects in Ge and Si." Thesis, University of Exeter, 2008. http://hdl.handle.net/10036/46913.

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This thesis covers the application of the local density approximation of density functional theory to a variety of related processes in germanium and silicon. Effort has been made to use calculated results to explain experimentally observed phenomena. The behaviour of vacancies and vacancy clusters in germanium has been studied as these are the dominant intrinsic defects in the material. Particular attention was paid to the annealing mechanisms for the divacancy as a precursor to the growth of the larger clusters, for which the electrical properties and formation energies have been studied. Some preliminary work is also presented on the germanium self-interstitial structure and migration paths. Attention was then turned to a selection of dopant-vacancy defects in both silicon and germanium. An effort was made to explain recent experimental observations in silicon through investigating a number of defects related to the arsenic E-centre. Following this, the properties of donor-vacancy clusters in germanium were studied, and comparison with the results calculated for silicon suggest a significant parallel between the behaviour of the defects and dopants in the two materials. Finally, extensive work was performed on the diffusion of phosphorus and boron in germanium. Diffusion of both dopants was studied via interstitial and vacancy mediated paths as well as by a correlated exchange path not involving any intrinsic defects. The results obtained confirmed current theories of the mechanisms involved in the diffusion of the two defects, while also expanding the knowledge of other paths and giving Fermi level dependences for the energy and mechanism for diffusion of the two defects. Boron diffusion was found to exhibit strong Meyer-Neldel rule effects, which are used to explain the unusually high diffusivity prefactors and energy barriers calculated from experimental measurements for this dopant.
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Ismail, Razali. "Simulation of dopant diffusion in silicon using finite element method : an adaptive meshing approach." Thesis, University of Cambridge, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.291751.

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Velayudhan, Nirmalkumar. "Analysis of Thermally Diffused Single Mode Optical Fiber Couplers." Thesis, Virginia Tech, 1994. http://hdl.handle.net/10919/36771.

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The phenomenon of dopant diffusion as a viable means of coupler fabrication is investigated. It is well known that the diffusion of dopants can improve the uniformity of multimode star couplers manufactured by the fused biconical taper technique. The theoretical basis for the same phenomenon in a single mode coupler is developed, on the basis of the theory of diffusion and the Gaussian approximation for circular fibers. A novel technique to manufacture and design single mode optical fiber couplers with a minimization of the manufacturing complexity is demonstrated. Traditionally fused biconical tapered couplers have been manufactured by twisting, fusing and elongating optical fibers at elevated temperatures. Usually, high temperature oxy-hydrogen flames are used for such purposes and some degree of skill is needed for a human operator. The complexity of control procedures for automation of the process is greatly increased by the fact that the tapering process is an integral part of the feedback loop. This can be eliminated if a constant tension is maintained on the fibers in the heating process while heat is applied uniformly from a source such as a platinum wire furnace. Since the refractive index differentials responsible for the guiding phenomenon at optical frequencies are directly dependent on concentration of dopants like fluorine and germania, radial diffusion of such dopants causes the fiber cores that are heated in a platinum wire furnace to come closer together. Such proximity leads to the phenomenon of evanescent field interaction or coupling of optical power from one arm of the coupler to the other. The time evolution of the coupling process can be predicted in theory. While initial results are promising, the ability to automate the manufacture of couplers will be successful only after greater control over the variables is established. It is the intention of this work to understand the physics behind the mechanism as well as to prove the feasibility of modeling real world phenomena under controlled conditions.
Master of Science
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Moreau, Patrick. "Diffusion moléculaire d'un dopant hydrosoluble dans une phase lamellaire lyotropeTransition smectique - cholestérique dans un mélange de molécules amphiphiles." Bordeaux 1, 2004. http://www.theses.fr/2004BOR12896.

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L'étude des propriétés de diffusion moléculaire d'un dopant dans une phase lamellaire orientée nous permet de mettre en évidence les caractéristiques de diffusion dans un milieux fortement anisotrope. En particulier, la variation continue de la dilution du système montre l'existence de deux régimes : un régime dilué où les molécules diffusent comme dans un solvant et un nouveau régime, très confiné, dans lequel les molécules diffusent comme des dopants membranaires. Le développement d'un modèle prenant en compte la fluidité des membranes nous permet d'interpréter ces résultats dans la majorité des cas et révèle l'importance de l'anisotropie des diffuseurs. Dans la seconde partie, nous nous intéressons à l'étude du mécanisme microscopique mis en jeu dans la transition smectique cholestérique dans les cristaux liquides lyotropes. En utilisant un système déjà connu au laboratoire (DMPC/C12E5/H2O), nous validons expérimentalement le scénario de transition par débouclage de boucles de dislocations proposé théoriquement depuis plusieurs années. Nous proposons ainsi un système expérimental de choix pour l'étude de ce genre de transition, prédites dans différents domaines de la physique de la matière condensée. La visualisation directe des défauts, la mise en évidence de leur structure en boucle, l'observation de leur différentes organisations nous permet également de proposer l'existence de nouvelles phases dans le domaine des cristaux liquides lyotropes (smectique biaxe et phase TGB)
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Books on the topic "Dopant diffusion"

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Vollenweider, Kilian. Dopant clustering and diffusion in silicon. Konstanz: Hartung-Gorre, 2010.

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1955-, Gibson Ursula Jane, White Alice E, and Pronko Peter P, eds. Materials modification and growth using Ion beams: Symposium held April 21-23, 1987, Anaheim, California, U.S.A. Pittsburgh, Pa: Materials Research Society, 1987.

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Impurities in semiconductors: Solubility, migration, and interactions. Boca Raton: CRC Press, 2004.

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Baudrant, Annie. Silicon technologies: Ion implantation and thermal treatment. London: ISTE, 2011.

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Kaschieva, S. Radiation defects in ion implanted and/or high-energy irradiated MOS structures. New York: Nova Science Publishers, 2010.

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Jones, Erin C., Kevin S. Jones, Martin D. Giles, Peter Stolk, and Jiro Matsuo. Si Front-End Processing : Volume 669: Physics and Technology of Dopant-Defect Interactions III. University of Cambridge ESOL Examinations, 2014.

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Doping: Properties, Mechanisms and Applications. Nova Science Pub Inc, 2013.

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Kar, Pradip. Doping in Conjugated Polymers. Wiley & Sons, Incorporated, John, 2013.

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Kar, Pradip. Doping in Conjugated Polymers. Wiley & Sons, Incorporated, John, 2013.

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Kar, Pradip. Doping in Conjugated Polymers. Wiley & Sons, Limited, John, 2013.

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Book chapters on the topic "Dopant diffusion"

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Kamins, Ted. "Dopant Diffusion and Segregation." In Polycrystalline Silicon for Integrated Circuits and Displays, 123–62. Boston, MA: Springer US, 1998. http://dx.doi.org/10.1007/978-1-4615-5577-3_3.

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Kamins, Ted. "Dopant Diffusion and Segregation." In Polycrystalline Silicon for Integrated Circuit Applications, 91–123. Boston, MA: Springer US, 1988. http://dx.doi.org/10.1007/978-1-4613-1681-7_3.

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Friedman, Avner. "Modeling of dopant diffusion networks." In Mathematics in Industrial Problems, 21–35. New York, NY: Springer New York, 1994. http://dx.doi.org/10.1007/978-1-4613-8383-3_3.

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Portavoce, Alain, Roberto Simola, Dominique Mangelinck, Jean Bernardini, and Pascal Fornara. "Dopant Diffusion during Amorphous Silicon Crystallization." In Defect and Diffusion Forum, 33–38. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/3-908451-41-8.33.

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Mathiot, Daniel. "Dopant Diffusion: Modeling and Technological Challenges." In Silicon Technologies, 155–207. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2013. http://dx.doi.org/10.1002/9781118601044.ch3.

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Pakfar, Ardechir, A. Poncet, T. Schwartzmann, and H. Jaouen. "A Unified Model of Dopant Diffusion in SiGe." In Simulation of Semiconductor Processes and Devices 2001, 62–65. Vienna: Springer Vienna, 2001. http://dx.doi.org/10.1007/978-3-7091-6244-6_14.

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Pakfar, A., P. Holliger, A. Poncet, C. Fellous, D. Dutartre, T. Schwartzmann, and H. Jaouen. "Modeling dopant diffusion in SiGe and SiGeC layers." In Simulation of Semiconductor Processes and Devices 2004, 45–48. Vienna: Springer Vienna, 2004. http://dx.doi.org/10.1007/978-3-7091-0624-2_11.

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An, Dao Khac. "Important Features of Anomalous Single-Dopant Diffusion and Simultaneous Diffusion of Multi-Dopants and Point Defects in Semiconductors." In Defects and Diffusion in Ceramics IX, 15–36. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/3-908451-47-7.15.

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Lin, Chih-Chuan, and Mark E. Law. "2-D Adaptive Simulation of Dopant Implantation and Diffusion." In Simulation of Semiconductor Devices and Processes, 282–85. Vienna: Springer Vienna, 1995. http://dx.doi.org/10.1007/978-3-7091-6619-2_68.

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Honeycutt, J. W., and G. A. Rozgonyi. "Dopant Diffusion and Point Defects in Silicon During Silicidation." In Crucial Issues in Semiconductor Materials and Processing Technologies, 415–19. Dordrecht: Springer Netherlands, 1992. http://dx.doi.org/10.1007/978-94-011-2714-1_41.

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Conference papers on the topic "Dopant diffusion"

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Aziz, M. J. "Dopant diffusion under pressure and stress." In IEEE International Conference on Simulation of Semiconductor Processes and Devices. IEEE, 2003. http://dx.doi.org/10.1109/sispad.2003.1233656.

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Bae, Sangyoon, Sijin Lee, and Jonghoon Yi. "Localized Diffusion of Dopant by Laser Assist." In CIOMP-OSA Summer Session: Lasers and Their Applications. Washington, D.C.: OSA, 2011. http://dx.doi.org/10.1364/sumsession.2011.tu6.

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Tan, L. T., Gary H. G. Chan, W. F. Kho, and X. D. Wang. "N-type dopant out diffusion induced EEPROM failure." In 2013 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA). IEEE, 2013. http://dx.doi.org/10.1109/ipfa.2013.6599150.

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Shayesteh, M., V. Djara, M. Schmidt, M. White, A. M. Kelleher, and Ray Duffy. "Fluorine implantation in germanium for dopant diffusion control." In ION IMPLANTATION TECHNOLOGY 2012: Proceedings of the 19th International Conference on Ion Implantation Technology. AIP, 2012. http://dx.doi.org/10.1063/1.4766503.

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Dev, K., C. T. M. Kwok, R. Vaidyanathan, R. D. Braatz, and E. G. Seebauer. "Controlling Dopant Diffusion and Activation through Surface Chemistry." In ION IMPLANTATION TECHNOLOGY: 16th International Conference on Ion Implantation Technology - IIT 2006. AIP, 2006. http://dx.doi.org/10.1063/1.2401459.

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Cai, Yan, Rodolfo Camacho-Aguilera, Jonathan T. Bessette, Lionel C. Kimerling, and Jurgen Michel. "High n++ doped germanium: Dopant in-diffusion and modeling." In 2011 IEEE 8th International Conference on Group IV Photonics (GFP). IEEE, 2011. http://dx.doi.org/10.1109/group4.2011.6053772.

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Meinshausen, Lutz, Soumik Banerjee, Indranath Dutta, and Bhaskar Majumdar. "Mitigation of Tin Whisker Growth by Dopant Addition." In ASME 2015 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems collocated with the ASME 2015 13th International Conference on Nanochannels, Microchannels, and Minichannels. American Society of Mechanical Engineers, 2015. http://dx.doi.org/10.1115/ipack2015-48155.

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Abstract:
Due to world wide Pb-free regulation for electroplated tin, whisker formation has returned as a long term reliability problem for tin coated electronic components. In addition the exact mechanism(s) responsible for Sn whisker growth mitigation by Pb were never clearly indentified, which makes the search for an replacement of Pb a difficult process. In this work the effects of In doping on tin whisker growth were investigated. In order to maintain Sn as a single phase material only small additions of In were incorporated, approximately 5–10 wt.% In. Indium was incorporated into Sn using a 100 nm over-plate of In on 1 μm thick Sn followed by heat treatments at 125°C and 160°C to permit diffusion of In into Sn. Control samples of pure Sn in the as-plated as well as 125 C heat treated conditions were also used. Whisker density results show a dramatic decrease of almost two orders of magnitude for the 160°C HT Sn-In sample. This is a new result in whisker mitigation studies, and we interpret it as a real effect of In, although further verification including the use of control samples are required. The segregation of dopants at the grain boundaries (GB) of tin, which might lead to reduced self diffusion of Sn, was investigated by performing molecular dynamic (MD) simulations on randomly added Pb atoms. Segregation of Pb clusters to GB was observed. While simulations with In dopant has not been conducted as yet, nevertheless such segregation may be one of several mechanisms responsible for the In effect.
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Pearson, Robert E., Karl D. Hirschman, and Robert Manley. "Process Model Verification for Dopant Segregation and Oxidation Enhanced Diffusion." In 2008 17th Biennial University/Government/Industry Micro/Nano Symposium. IEEE, 2008. http://dx.doi.org/10.1109/ugim.2008.46.

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KASHIO, Takako, and Koichi KATO. "A New Dopant Diffusion Modeling Based on Point Defect Kinetics." In 1988 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1988. http://dx.doi.org/10.7567/ssdm.1988.a-8-3.

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Black, Kevin. "Diffusion furnace dopant activation matching through a ramped temperature idle." In 2008 26th International Conference on Microelectronics (MIEL 2008). IEEE, 2008. http://dx.doi.org/10.1109/icmel.2008.4559278.

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Reports on the topic "Dopant diffusion"

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Moore, W., A. Lange, K. Sasan, J. Ha, and G. Kosiba. Simulating Dopant Diffusion in a Detalied Porous Structure. Office of Scientific and Technical Information (OSTI), August 2021. http://dx.doi.org/10.2172/1817990.

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Caturla, M., M. Johnson, T. Lenosky, B. Sadigh, S. K. Theiss, J. Zhu, and T. D. de la Rubia. Atomic scale models of Ion implantation and dopant diffusion in silicon. Office of Scientific and Technical Information (OSTI), March 1999. http://dx.doi.org/10.2172/12209.

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Caturla, M., M. D. Johnson, and J. Zhu. Toward a predictive atomistic model of ion implantation and dopant diffusion in silicon. Office of Scientific and Technical Information (OSTI), September 1998. http://dx.doi.org/10.2172/2853.

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Venezia, V. C., T. E. Haynes, A. Agarwal, H. J. Gossmann, and D. J. Eaglesham. Enhanced diffusion of dopants in vacancy supersaturation produced by MeV implantation. Office of Scientific and Technical Information (OSTI), April 1997. http://dx.doi.org/10.2172/474920.

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Fassnacht, Malena, and Hugh Lippincott. Analyzing Gas Diffusion in LXe-TPCs for Upcoming Hydrogen Doping Studies. Office of Scientific and Technical Information (OSTI), August 2019. http://dx.doi.org/10.2172/1637623.

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Balapanov, M. Kh, K. A. Kuterbekov, M. M. Kubenova, R. Kh Ishembetov, B. M. Akhmetgaliev, and R. A. Yakshibaev. Effect of lithium doping on electrophysical and diffusion proper-ties of nonstoichiometric superionic copper selenide Cu1.75Se. Phycal-Technical Society of Kazakhstan, December 2017. http://dx.doi.org/10.29317/ejpfm.2017010203.

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