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Journal articles on the topic 'Doherty power amplifiers'

Author: Grafiati

Published: 6 September 2023

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1

Sajedin, Maryam, I. T. E. Elfergani, Jonathan Rodriguez, Raed Abd-Alhameed, and Monica Fernandez Barciela. "A Survey on RF and Microwave Doherty Power Amplifier for Mobile Handset Applications." Electronics 8, no. 6 (June 25, 2019): 717. http://dx.doi.org/10.3390/electronics8060717.

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This survey addresses the cutting-edge load modulation microwave and radio frequency power amplifiers for next-generation wireless communication standards. The basic operational principle of the Doherty amplifier and its defective behavior that has been originated by transistor characteristics will be presented. Moreover, advance design architectures for enhancing the Doherty power amplifier’s performance in terms of higher efficiency and wider bandwidth characteristics, as well as the compact design techniques of Doherty amplifier that meets the requirements of legacy 5G handset applications, will be discussed.

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2

Shi, Weimin, and Songbai He. "Design of a Tri-Band Doherty Amplifier Based on Generalized Impedance Inverter." Journal of Circuits, Systems and Computers 28, no. 10 (September 2019): 1950170. http://dx.doi.org/10.1142/s0218126619501706.

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This paper introduces a methodology for implementing multi-band Doherty power amplifiers. Traditionally, a 90∘ impedance inverter line is required in Doherty architecture. In this contribution, a generalized impedance inverter line is utilized to construct multi-band Doherty power amplifiers. A tri-band Doherty power amplifier operating at 1.15, 1.85 and 2.55[Formula: see text]GHz is designed to validate the proposed method. Measurement results show the fabricated Doherty power amplifier achieves 6[Formula: see text]dB output back-off drain efficiencies of 62.3%, 49.3% and 50.5% at 1.15, 1.85 and 2.55[Formula: see text]GHz, respectively. The peaking output power of the fabricated tri-band Doherty power amplifier is 43.2, 43.7 and 43.8[Formula: see text]dBm with drain efficiencies of 64.5%, 62.2% and 64.5% at three working frequency points, respectively. Furthermore, when the designed Doherty power amplifier is driven by a 20[Formula: see text]MHz wideband LTE signal with peak-to-average-power ratio of 6.4[Formula: see text]dB, adjacent channel power ratios of [Formula: see text]29.4 and [Formula: see text]57.1[Formula: see text]dBc are achieved before and after digital pre-distortion at 1.85[Formula: see text]GHz.

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3

Barmala, Ehsan. "Design and simulate a doherty power amplifier using GaAs technology for telecommunication applications." Indonesian Journal of Electrical Engineering and Computer Science 15, no. 2 (August 1, 2019): 845. http://dx.doi.org/10.11591/ijeecs.v15.i2.pp845-854.

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<span>In this paper, a Doherty power amplifier was designed and simulated at 2.4 GHz central frequency which has high efficiency. A Doherty power amplifier is a way to increase the efficiency in the power amplifiers. OMMIC ED02AH technology and PHEMT transistors, which is made of gallium arsenide, have been used in this simulation. The Doherty power amplifier unique feature is its simple structure which is consisting of two parallel power amplifiers and transmission lines. In order to integrate the circuit, the Doherty power transmission amplifier lines were implemented using an inductor and capacitive components. Also, the Wilkinson power divider is used on the chip input. To improve the efficiency, the auxiliary amplifier dimensions is selected enlarge and the further input power is allocated it by the power divider. A parallel R-C circuit has been used at the input of transistors to improve their stability. Simulation results show that the Doherty power amplifier has 17.2 dB output power gain, 23 dBm maximum output power, and its output power P<sub>1dB</sub> =22.6dBm at compression point -1 dB, also, its maximum efficiency is 55.5%.</span>

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4

Choi, Hojong. "A Doherty Power Amplifier for Ultrasound Instrumentation." Sensors 23, no. 5 (February 21, 2023): 2406. http://dx.doi.org/10.3390/s23052406.

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The ultrasound instrumentation uses linear power amplifiers with low power efficiency, generating unwanted heat and resulting in the deterioration of the echo signal quality of measured targets. Therefore, this study aims to develop a power amplifier scheme to increase power efficiency while maintaining appropriate echo signal quality. In communication systems, the Doherty power amplifier has shown relatively good power efficiency while producing high signal distortion. The same design scheme cannot be directly applied to ultrasound instrumentation. Therefore, the Doherty power amplifier needs to be re-designed. To verify the feasibility of the instrumentation, a Doherty power amplifier was designed to obtain high power efficiency. The measured gain, output 1-dB compression point, and power-added efficiency of the designed Doherty power amplifier were 33.71 dB, 35.71 dBm, and 57.24% at 25 MHz, respectively. In addition, the performance of the developed amplifier was measured and tested using the ultrasound transducer through the pulse-echo responses. The output power with 25 MHz, 5-cycle, and 43.06 dBm generated from the Doherty power amplifier was sent through the expander to the focused ultrasound transducer with 25 MHz and 0.5″ diameter. The detected signal was sent via a limiter. Afterwards, the signal was amplified by a 36.8 dB gain preamplifier, and then displayed in the oscilloscope. The measured peak-to-peak amplitude in the pulse-echo response with an ultrasound transducer was 0.9698 V. The data showed a comparable echo signal amplitude. Therefore, the designed Doherty power amplifier can improve the power efficiency used for medical ultrasound instrumentation.

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5

Yan, Jonmei J., Paul Draxler, Calogero D. Presti, Donald F. Kimball, and Peter M. Asbeck. "Digital predistortion of envelope-tracking power amplifiers under average power back-off and long-term average power efficiency for base-station applications." International Journal of Microwave and Wireless Technologies 5, no. 2 (February 18, 2013): 171–77. http://dx.doi.org/10.1017/s1759078713000147.

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In many base-station applications, the load/usage fluctuates over time periods of hours to days, thereby varying the required transmit power by as much as 10 dB. It is desirable to maintain high efficiency and linearity in the power amplifier under these back-off conditions in order to achieve high long-term efficiency. This paper demonstrates a scalable digital predistortion (DPD) approach that can be applied under different power back-off levels in envelope-tracking (ET) amplifiers and quantifies the associated efficiency. Efficiency comparisons are made with other amplifier configurations such as Class B and Doherty. Efficiency of 60% at full power (35 W average power) and >30% efficiency at 10 dB average power back-off are measured in an ET amplifier with a 7.54 dB peak-to-average ratio (PAPR) single-carrier WCDMA signal while meeting linearity specifications. Long-term base-station usage probability functions are presented. The long-term efficiency of the ET amplifiers is simulated to be greater than that of Class B and Doherty amplifiers.

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6

Darraji, Ramzi, Pedram Mousavi, and Fadhel M. Ghannouchi. "Doherty Goes Digital: Digitally Enhanced Doherty Power Amplifiers." IEEE Microwave Magazine 17, no. 8 (August 2016): 41–51. http://dx.doi.org/10.1109/mmm.2016.2561478.

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7

McKnight, Ken, Ali Darwish, and Mona Zaghloul. "A Compact Output Power Combiner for Broadband Doherty Power Amplifiers." Electronics 8, no. 3 (March 2, 2019): 275. http://dx.doi.org/10.3390/electronics8030275.

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A novel compact output power combiner for broadband Doherty Power Amplifiers is proposed in this paper. The proposed output power combiner avoids the use of quarter-wave impedance transformers as they are sizable and work over narrow bandwidths. Instead, the proposed combiner utilizes a distributed Brune Section to implement a compact broadband impedance inverter. The final area of the proposed output combiner is λ2/48. When compared to the conventional broadband Doherty structure, which has an approximate area of λ2/16, this structure offers an approximate size reduction of 67%. The proposed combiner is verified by using it in the design of a broadband Doherty power amplifier with an operating bandwidth of 1.7 GHz to 3.4 GHz. The saturated output power varies from 39.2 to 40.4 dBm with a peak power drain efficiency ranging from 58% to 66%. The drain efficiency at 6 dB Output Power Back-Off (OPBO) varies from 37.4% to 45% over an octave.

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8

Parisi, Alessandro, Giuseppe Papotto, Claudio Nocera, Alessandro Castorina, and Giuseppe Palmisano. "A Ka-Band Doherty Power Amplifier in a 150 nm GaN-on-SiC Technology for 5G Applications." Electronics 12, no. 17 (August 29, 2023): 3639. http://dx.doi.org/10.3390/electronics12173639.

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This paper presents a Ka-band three-stage power amplifier for 5G communications, which has been implemented in a 150 nm GaN-on-SiC technology and adopts a Doherty architecture. The amplifier is made up of a 50 Ω input buffer, which drives a power splitter, thanks to which it delivers its output power to the two power amplifier units of the Doherty topology, namely the main and auxiliary amplifier. Finally, the outputs of the two power amplifiers are properly arranged in a current combining scheme that enables the typical load modulation of the Doherty architecture, alongside allowing power combining at the final output. The proposed amplifier achieves a small signal gain of around 30 dB at 27 GHz, while providing a saturated output power of 32 dBm, with a power-added efficiency (PAE) as high as 26% and 18% at peak and 6 dB output power back-off, respectively.

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9

Santhanam, Suganthi, and Palavesam Selvan. "New Approach of Efficiency Improvement in 10 dB Doherty Power Amplifier for 4G LTE and 5G Wireless Applications." Applied Computational Electromagnetics Society 36, no. 4 (May 10, 2021): 379–85. http://dx.doi.org/10.47037/2020.aces.j.360403.

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In this research article, the design procedure and comparative analysis of the 10 dB Doherty power amplifier (DPA) with single and double auxiliary amplifier for maximum efficiency has been presented. A new Doherty amplifier structure with parallel two auxiliary amplifiers based on conventional design having optimum value of load resistance of 3.162 ohm has been proposed with higher efficiency of 85.803% and analyzed with n-tone sinusoidal signal. The proposed Doherty power amplifier can achieve drain efficiency of 83.299% & with single and 85.803% with dual auxiliary amplifier at the output power back, off of 10 dB from the saturated power point. The simulated outputs are matched with mathematically derived design values. The simulated n-tone time response shows that the proposed design of DPA can able to handle different modulation standards at different frequencies with compatible structure.

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10

Zhou, Xin Yu, Wing Shing Chan, Shichang Chen, and Wen Jie Feng. "Broadband Highly Efficient Doherty Power Amplifiers." IEEE Circuits and Systems Magazine 20, no. 4 (2020): 47–64. http://dx.doi.org/10.1109/mcas.2020.3027221.

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11

Abdulkhaleq, Ahmed M., Maan A. Yahya, Neil McEwan, Ashwain Rayit, Raed A. Abd-Alhameed, Naser Ojaroudi Parchin, Yasir I. A. Al-Yasir, and James Noras. "Recent Developments of Dual-Band Doherty Power Amplifiers for Upcoming Mobile Communications Systems." Electronics 8, no. 6 (June 6, 2019): 638. http://dx.doi.org/10.3390/electronics8060638.

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Power amplifiers in modern and future communications should be able to handle different modulation standards at different frequency bands, and in addition, to be compatible with the previous generations. This paper reviews the recent design techniques that have been used to operate dual-band amplifiers and in particular the Doherty amplifiers. Special attention is focused on the design methodologies used for power splitters, phase compensation networks, impedance inverter networks and impedance transformer networks of such power amplifier. The most important materials of the dual-band Doherty amplifier are highlighted and surveyed. The main problems and challenges covering dual-band design concepts are presented and discussed. In addition, improvement techniques to enhance such operations are also exploited. The study shows that the transistor parasitic has a great impact in the design of a dual-band amplifier, and reduction of the transforming ratio of the inverter simplifies the dual-band design. The offset line can be functionally replaced by a Π-network in dual-band design rather than T-network.

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12

Ma, Chao. "Current State and Advanced Architectures of Doherty Power Amplifiers." Highlights in Science, Engineering and Technology 62 (July 27, 2023): 42–46. http://dx.doi.org/10.54097/hset.v62i.10422.

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Power amplifiers are critical components of wireless communication systems, providing the necessary power to transmit signals over long distances. Among various power amplifier solutions, the Dougherty power amplifier (DPA) remains a popular choice due to its high efficiency, speed, and power combination. However, conventional DPAs suffer from limited bandwidth and linearity, which have been major challenges in contemporary DPA design. This paper discusses the status, challenges, and potential solutions for improving the bandwidth and linearity of the DPAs. The limited bandwidth of conventional DPAs has been a challenge for their use in wireless data communication. Furthermore, concerning DPA linearity, this paper discusses the importance of linearity for modern wireless communication and potential DPA linearization techniques. The paper proposes several emerging DPA architectures, namely the Asymmetric Dougherty Power Amplifier, Multi-Stage Dougherty Power Amplifier, and Digital Dougherty Power Amplifier. The findings of this paper provide insights into the current status and future development of DPA technology, particularly in terms of bandwidth and linearity.

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13

Saad, Paul, Zahra Asghari, Christian Fager, and Hossein Mashad Nemati. "Driver Topologies for RF Doherty Power Amplifiers." IEEE Microwave and Wireless Components Letters 27, no. 1 (January 2017): 67–69. http://dx.doi.org/10.1109/lmwc.2016.2629977.

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14

Giofrè, Rocco, Paolo Colantonio, Franco Giannini, Chiara Ramella, Vittorio Camarchia, Mustazar Iqbal, Marco Pirola, and Roberto Quaglia. "A comprehensive comparison between GaN MMIC Doherty and combined class-AB power amplifiers for microwave radio links." International Journal of Microwave and Wireless Technologies 8, no. 4-5 (February 11, 2016): 673–81. http://dx.doi.org/10.1017/s175907871600012x.

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A combined class-AB and a Doherty power amplifier conceived for microwave backhaul in the 7 GHz frequency band are here presented and compared. They are fabricated in the same GaN monolithic process and have identical total active device periphery. For the given application, the linearity-efficiency trade-off for the two architectures is discussed. The two modules have been thoroughly characterized in linear and non-linear continuous wave conditions. Then, to evaluate linearity under the actual operative conditions, a system level characterization has been carried out, applying a modulated input signal and comparing the spectral responses of the two amplifiers with and without digital predistortion. A saturated output power of 40 dBm has been achieved by both circuits. At 6 dB of output back-off, the Doherty amplifier shows an efficiency of 33%, 10 points higher than that of the class-AB module. On the other hand, system level measurements show that, adopting the same predistorter complexity to comply with the reference standard emission masks, the Doherty amplifier needs at least 1 dB of extra back-off. This negatively affects its efficiency, therefore reducing the advantages it can claim with respect to the class-AB amplifier in continuous wave condition.

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15

Aydin, Omer, Osman Palamutçuoğulları, and Binboğa Sıddık Yarman. "Effect of offset lines in Doherty power amplifiers." IEICE Electronics Express 12, no. 24 (2015): 20150867. http://dx.doi.org/10.1587/elex.12.20150867.

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16

Piazzon, Luca, Rocco Giofre, Paolo Colantonio, and Franco Giannini. "A METHOD FOR DESIGNING BROADBAND DOHERTY POWER AMPLIFIERS." Progress In Electromagnetics Research 145 (2014): 319–31. http://dx.doi.org/10.2528/pier14011301.

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17

Zhou, Xin Yu, Wing Shing Chan, Tushar Sharma, Wen Jie Jie, and Jing Xia. "Harnessing Harmonics in Doherty Power Amplifiers [Application Notes]." IEEE Microwave Magazine 22, no. 8 (August 2021): 16–31. http://dx.doi.org/10.1109/mmm.2021.3078042.

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18

Hao, Peng, Songbai He, Fei You, Jiayan Wu, Chuan Li, and Jun Peng. "Configurable Independently Tunable Linearizer for Doherty Power Amplifiers." IEEE Microwave and Wireless Components Letters 30, no. 11 (November 2020): 1077–80. http://dx.doi.org/10.1109/lmwc.2020.3026699.

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19

Kang, Daehyun, Jinsung Choi, Dongsu Kim, and Bumman Kim. "Design of Doherty Power Amplifiers for Handset Applications." IEEE Transactions on Microwave Theory and Techniques 58, no. 8 (August 2010): 2134–42. http://dx.doi.org/10.1109/tmtt.2010.2053074.

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20

Piacibello, Anna, and Vittorio Camarchia. "Watt-Level Ka-Band Integrated Doherty Power Amplifiers: Technologies and Power Combination Strategies Invited Paper." Electronics 11, no. 1 (December 28, 2021): 84. http://dx.doi.org/10.3390/electronics11010084.

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This paper discusses some of the design choices underlying the development of watt-level integrated Doherty power amplifiers in the K and Ka band, focusing on compound semiconductor technologies. The key aspect of on-chip power combination is discussed, presenting and comparing some of the possible alternatives. Then, the impact on the achievable bandwidth and performance of different parameters is quantified, adopting an approximate analysis, which focuses on the Doherty output combiner and allows estimating the non-linear performance of the amplifier thanks to some simplifying assumptions, without requiring a full, non-linear model of the active devices. Two sample GaAs and GaN technologies are compared first, considering parameters that are representative of the currently available commercial processes, and then several power combination strategies are analyzed, adopting the GaN technology, which is currently the only one that allows achieving the power levels required by the applications directly on chip. Finally, some hints as to the impact of the output parasitic effects of the transistors on the presented analysis are given.

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21

Moreno Rubio, Jorge Julián, Edison Ferney Angarita Malaver, and Luis Ángel Lara González. "Wideband Doherty Power Amplifier: A Design Approach." Micromachines 13, no. 4 (March 23, 2022): 497. http://dx.doi.org/10.3390/mi13040497.

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This paper presents a simple method to design wideband Doherty power amplifiers (DPAs) based on the synthesis of a combiner network which can mimic the response of an ideal compensation of the device reactive output equivalent network and exploit the maximum power capabilities of the device. Using the Wolfspeed’s CGH40006 and CG2H40025 GaN HEMT devices, two DPAs were designed and simulated to demonstrate the effectiveness of the proposed approach. In both cases, a 1.4 GHz bandwidth was obtained together with an efficiency higher than 44 and 49% at 6 dB OBO. The saturated output power was higher than 41.2 and 47 dBm over the band, for the DPAs using the CGH40006 and CG2H40025 devices, respectively.

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22

Díez-Acereda, Victoria, Sunil Lalchand Khemchandani, Javier del Pino, and Ayoze Diaz-Carballo. "A Comparative Analysis of Doherty and Outphasing MMIC GaN Power Amplifiers for 5G Applications." Micromachines 14, no. 6 (June 7, 2023): 1205. http://dx.doi.org/10.3390/mi14061205.

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A comparison between a fully integrated Doherty power amplifier (DPA) and outphasing power amplifier (OPA) for fifth Generation (5G) wireless communications is presented in this paper. Both amplifiers are integrated using pHEMT transistors from the OMMIC’s 100 nm GaN-on-Si technology (D01GH). After a theoretical analysis, the design and layout of both circuits are presented. The DPA uses an asymmetric configuration where the main amplifier is biased in class AB and the auxiliary amplifier is biased in class C, while the OPA uses two amplifiers biased in class B. In the comparative analysis, it has been observed that the OPA presents a better performance in terms of maximum power added efficiency (PAE), while the DPA provides higher linearity and efficiency at 7.5 dB output back-off (OBO). At a 1 dB compression point, the OPA exhibits an output power of 33 dBm with a maximum PAE of 58.3% compared to 44.2% for the DPA for an output power of 35 dBm, and at 7.5 dB OBO, the DPA achieves a PAE of 38.5%, while the OPA achieves 26.1%. The area has been optimized using absorbing adjacent component techniques, resulting in an area of 3.26 mm2 for the DPA and 3.18 mm2 for the OPA.

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23

Aydin, Omer, Osman Palamutcuogullari, and Binboga Siddik Yarman. "Effect of input phase mismatch in Doherty power amplifiers." IEICE Electronics Express 13, no. 20 (2016): 20160870. http://dx.doi.org/10.1587/elex.13.20160870.

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24

Shao, Jin, Rongguo Zhou, Han Ren, Bayaner Arigong, Mi Zhou, Hyoung Soo Kim, and Hualiang Zhang. "Design of GaN Doherty Power Amplifiers for Broadband Applications." IEEE Microwave and Wireless Components Letters 24, no. 4 (April 2014): 248–50. http://dx.doi.org/10.1109/lmwc.2013.2293659.

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25

Liang, Chenyu, Patrick Roblin, and Yunsik Hahn. "Accelerated Design Methodology for Dual-Input Doherty Power Amplifiers." IEEE Transactions on Microwave Theory and Techniques 67, no. 10 (October 2019): 3983–95. http://dx.doi.org/10.1109/tmtt.2019.2924373.

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26

Takayama, Yoichiro, Tetsuji Harada, Takayuki Fujita, and Kazusuke Maenaka. "Design method of microwave Doherty power amplifiers and its application to Si power MOSFET amplifiers." Electronics and Communications in Japan (Part II: Electronics) 88, no. 4 (2005): 9–17. http://dx.doi.org/10.1002/ecjb.20137.

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27

Kim, Jangheon, Bilel Fehri, Slim Boumaiza, and John Wood. "Power Efficiency and Linearity Enhancement Using Optimized Asymmetrical Doherty Power Amplifiers." IEEE Transactions on Microwave Theory and Techniques 59, no. 2 (February 2011): 425–34. http://dx.doi.org/10.1109/tmtt.2010.2086466.

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28

Hammi, Oualid. "Augmented Twin-Nonlinear Two-Box Behavioral Models for Multicarrier LTE Power Amplifiers." Scientific World Journal 2014 (2014): 1–7. http://dx.doi.org/10.1155/2014/762534.

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A novel class of behavioral models is proposed for LTE-driven Doherty power amplifiers with strong memory effects. The proposed models, labeled augmented twin-nonlinear two-box models, are built by cascading a highly nonlinear memoryless function with a mildly nonlinear memory polynomial with cross terms. Experimental validation on gallium nitride based Doherty power amplifiers illustrates the accuracy enhancement and complexity reduction achieved by the proposed models. When strong memory effects are observed, the augmented twin-nonlinear two-box models can improve the normalized mean square error by up to 3 dB for the same number of coefficients when compared to state-of-the-art twin-nonlinear two-box models. Furthermore, the augmented twin-nonlinear two-box models lead to the same performance as previously reported twin-nonlinear two-box models while requiring up to 80% less coefficients.

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29

Akhter, Muhammad Ovais, and Najam Muhammad Amin. "Design and Optimization of 2.1 mW ULP Doherty Power Amplifier with Interstage Capacitances Using 65 nm CMOS Technology." Mathematical Problems in Engineering 2021 (November 19, 2021): 1–12. http://dx.doi.org/10.1155/2021/3364016.

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This research proposed the design and calculations of ultra-low power (ULP) Doherty power amplifier (PA) using 65 nm CMOS technology. Both the main and the peaking amplifiers are designed and optimized using equivalent lumped parameters and power combiner models. The operation has been performed in RF-nMOS subthreshold or triode region to achieve ultra-low power (ULP) and to improve the linearity of the overall power amplifier (PA). The novel design consumes a DC power of 2.1 mW, power-added efficiency (PAE) of 29.8%, operating at 2.4 GHz band, and output referred 1 dB compression point at 4.1dBm. The simulation results show a very good capability of drive current, high gain, and very low input and output insertion losses.

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Wiegner, Dirk, Gerhard Luz, Patrick Jüschke, Robin Machinal, Thomas Merk, Ulrich Seyfried, Wolfgang Templ, Andreas Pascht, Rüdiger Quay, and Friedbert Van Raay. "AlGaN/GaN-based power amplifiers for mobile radio applications: a review from the system supplier's perspective." International Journal of Microwave and Wireless Technologies 2, no. 1 (February 2010): 95–104. http://dx.doi.org/10.1017/s175907871000022x.

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This paper gives a summarized overview on the progress and achievements on AlGaN/GaN high electron mobility transistors (HEMT)-based power amplifiers (PAs) for mobile radio applications which have been achieved within two national funded German projects during a period of six years. Starting with a first 34 dBm (2.5 W, peak) amplifier in 2003 the impressive progress toward highly efficient S-band mobile radio PAs with up to >50 dBm (100 W) peak output power is described by means of some selected single- and multiband amplifier demonstrators. This progress has been mainly enabled by clear progress on GaN technology, device packaging, and PA design. Targeting at highly efficient single-band amplifier applications, a 2.7 GHz symmetrical Doherty amplifier with up to 45% drain efficiency at close to 45 dBm average output power under single-carrier W-CDMA (Wideband Code Division Multiple Access) operation using digital predistortion can be highlighted. In case of multiband capable amplifiers addressing software-defined radio applications, a class-AB-based demonstrator covering a frequency range from 1.8 to 2.7 GHz was realized. The amplifier showed >30% drain efficiency up to 2.5 GHz as well as up to 40 dBm average output power under single-carrier W-CDMA operation using proprietary digital predistortion. Finally, Alcatel-Lucent's activities on envelope tracking for future efficiency improved GaN-based amplifiers are described.

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31

Quaglia, Roberto, Marco Pirola, and Chiara Ramella. "Offset Lines in Doherty Power Amplifiers: Analytical Demonstration and Design." IEEE Microwave and Wireless Components Letters 23, no. 2 (February 2013): 93–95. http://dx.doi.org/10.1109/lmwc.2013.2241535.

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32

Hongyo, Reina, Yoshimasa Egashira, Thomas M. Hone, and Keiichi Yamaguchi. "Deep Neural Network-Based Digital Predistorter for Doherty Power Amplifiers." IEEE Microwave and Wireless Components Letters 29, no. 2 (February 2019): 146–48. http://dx.doi.org/10.1109/lmwc.2018.2888955.

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33

Grebennikov, Andrei, and Senad Bulja. "High-Efficiency Doherty Power Amplifiers: Historical Aspect and Modern Trends." Proceedings of the IEEE 100, no. 12 (December 2012): 3190–219. http://dx.doi.org/10.1109/jproc.2012.2211091.

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34

Esch, Jim. "High-Efficiency Doherty Power Amplifiers: Historical Aspect and Modern Trends." Proceedings of the IEEE 100, no. 12 (December 2012): 3187–89. http://dx.doi.org/10.1109/jproc.2012.2219195.

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35

Kang, Daehyun, Dongsu Kim, Yunsung Cho, Byungjoon Park, Jooseung Kim, and Bumman Kim. "Design of Bandwidth-Enhanced Doherty Power Amplifiers for Handset Applications." IEEE Transactions on Microwave Theory and Techniques 59, no. 12 (December 2011): 3474–83. http://dx.doi.org/10.1109/tmtt.2011.2171042.

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36

Kang, Daehyun, Yunsung Cho, Dongsu Kim, Byungjoon Park, Jooseung Kim, and Bumman Kim. "Impact of Nonlinear $C_{bc}$ on HBT Doherty Power Amplifiers." IEEE Transactions on Microwave Theory and Techniques 61, no. 9 (September 2013): 3298–307. http://dx.doi.org/10.1109/tmtt.2013.2273762.

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37

Nghiem, Xuan Anh, Junqing Guan, Thomas Hone, and Renato Negra. "Design of Concurrent Multiband Doherty Power Amplifiers for Wireless Applications." IEEE Transactions on Microwave Theory and Techniques 61, no. 12 (December 2013): 4559–68. http://dx.doi.org/10.1109/tmtt.2013.2281959.

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38

Shi, Weimin, Songbai He, Xiaoyu Zhu, Bin Song, Zhitao Zhu, Gideon Naah, and Min Zhang. "Broadband Continuous-Mode Doherty Power Amplifiers With Noninfinity Peaking Impedance." IEEE Transactions on Microwave Theory and Techniques 66, no. 2 (February 2018): 1034–46. http://dx.doi.org/10.1109/tmtt.2017.2749224.

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39

Moradi Ardekani, Mohammad Hadi, and Habibollah Abiri. "A new design procedure for wide band Doherty power amplifiers." AEU - International Journal of Electronics and Communications 98 (January 2019): 181–90. http://dx.doi.org/10.1016/j.aeue.2018.11.021.

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Colantonio, P., F. Giannini, R. Giofrè, and L. Piazzon. "Class F against tuned load configuration in Doherty power amplifiers." Microwave and Optical Technology Letters 52, no. 2 (December 8, 2009): 450–52. http://dx.doi.org/10.1002/mop.24918.

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41

Liu, Haiwen. "Nonlinear behavioral of GaN Doherty power amplifiers using neural modeling." Microwave and Optical Technology Letters 52, no. 2 (December 8, 2009): 307–9. http://dx.doi.org/10.1002/mop.24924.

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Seidel, Andres, Jens Wagner, and Frank Ellinger. "Frequency analysis of load modulation networks for asymmetric Doherty power amplifiers in GaN." International Journal of Microwave and Wireless Technologies 14, no. 2 (November 22, 2021): 123–33. http://dx.doi.org/10.1017/s1759078721001550.

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AbstractThis paper investigates the frequency response of load modulation networks for asymmetric Doherty power amplifiers (ADPA) with an output back-off power level larger than 6 dB and a power ratio of peak to main amplifier (N − 1) larger than 1. The influence of the main path impedance transformer (IT) on the Doherty impedances at main and peak path as well as on the ADPA's efficiency is analyzed. Scaling of the main IT's characteristic impedance via ξ indicates a maximum broadband matching for an input voltage Vin of ξ · Vin,max. By weighting the frequency- and ξ-dependent efficiency curves using a probability density function (PDF), an optimum is obtained for ξ = 1/N. To verify the theory, three ADPAs with different ξ-scaled ITs are designed, measured, and compared. For the design at 3.6 GHz, a gallium nitride (GaN) transistor is used. By means of the intrinsic node matching technique, matching at the current source plane is obtained. In laboratory measurements, the ADPA with ξ = 1/N achieves a power-added efficiency (PAE) of 63% at 42 dBm output power and a PDF-weighted average PAE of 38.8% within 400 MHz bandwidth for 8 dB peak-to-average power ratio. Comparison with similar state-of-the-art ADPAs in GaN technology shows highest PAE and operation power gain GP for center frequencies larger than 3.0 GHz.

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Shi, Weimin, Songbai He, Fei You, Haiping Xie, Gideon Naah, Qiang-An Liu, and Qirong Li. "The Influence of the Output Impedances of Peaking Power Amplifier on Broadband Doherty Amplifiers." IEEE Transactions on Microwave Theory and Techniques 65, no. 8 (August 2017): 3002–13. http://dx.doi.org/10.1109/tmtt.2017.2673822.

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Jang, Youna, Kwanhun Jeong, Jiwon Kim, Daeung Lee, and Dal Ahn. "A Wideband Doherty Combiner with Phase Variation Compensation Using LTCC Applicable for High Power Transmission." Journal of Electromagnetic Engineering and Science 22, no. 5 (September 30, 2022): 550–54. http://dx.doi.org/10.26866/jees.2022.5.r.121.

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In this paper, we propose a small-sized Doherty combiner with phase variation compensation using low temperature co-fired ceramic (LTCC) substrate. The proposed design theory for the Doherty combiner is derived using the phase calculation of the <i>S</i>-parameter based on the relation between the input and output ports. The proposed circuit is designed after determining the band edge frequency and the targeted degree of the phase balance. The proposed circuit is verified using the microstrip line and the LTCC substrate. The implemented structure, using LTCC as the substrate, is operated under a high-power test of continuous wave 50 W, the results of which also show that the amplitude and phase balance have variations within 0.2 dB and ±1°, respectively. The high-power test shows that the implemented structure is applicable for high power Doherty amplifiers or combiners.

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Ahmadi, Kayvan, Massoud Dousti, and Shahrooz Asadi. "A Highly Extended High-Efficiency Range Class-F–C Doherty Power Amplifier." Journal of Circuits, Systems and Computers 29, no. 09 (December 19, 2019): 2050152. http://dx.doi.org/10.1142/s0218126620501522.

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This paper presents a new extended high-efficiency-range Doherty power amplifier (DPA) with a main and only a single auxiliary amplifier. In order to extend the output high-efficiency range with a high-efficiency level, asymmetrical cells are employed as the main and auxiliary amplifiers in class-F and class-C complex combining load (CCL) methodology, respectively. To verify the proposed methodology, a DPA with 12-dB output back-off (OBO) is designed and fabricated for wideband code division multiple access (WCDMA) applications. Large-signal continuous-wave measurement results show the power gain of about 11[Formula: see text]dB with a drain efficiency of 59.9% at 12[Formula: see text]dB of OBO. A two-tone test exhibits a third-order intermodulation distortion (IMD) of lower than [Formula: see text][Formula: see text]dBc. Modulated wave measurements show over 55% of average drain efficiency and an adjacent channel leakage power ratio (ACLR) of lower than [Formula: see text][Formula: see text]dBc at an output power level of 31.5[Formula: see text]dBm.

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Nick, Morteza, and Amir Mortazawi. "Adaptive Input-Power Distribution in Doherty Power Amplifiers for Linearity and Efficiency Enhancement." IEEE Transactions on Microwave Theory and Techniques 58, no. 11 (November 2010): 2764–71. http://dx.doi.org/10.1109/tmtt.2010.2077930.

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Piazzon, Luca, Rocco Giofre, Roberto Quaglia, Vittorio Camarchia, Marco Pirola, Paolo Colantonio, Franco Giannini, and Giovanni Ghione. "Effect of Load Modulation on Phase Distortion in Doherty Power Amplifiers." IEEE Microwave and Wireless Components Letters 24, no. 7 (July 2014): 505–7. http://dx.doi.org/10.1109/lmwc.2014.2316507.

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Ruhul Hasin, Muhammad, and Jennifer Kitchen. "Exploiting Phase for Extended Efficiency Range in Symmetrical Doherty Power Amplifiers." IEEE Transactions on Microwave Theory and Techniques 67, no. 8 (August 2019): 3455–63. http://dx.doi.org/10.1109/tmtt.2019.2921366.

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Giofre, Rocco, Luca Piazzon, Paolo Colantonio, and Franco Giannini. "A Closed-Form Design Technique for Ultra-Wideband Doherty Power Amplifiers." IEEE Transactions on Microwave Theory and Techniques 62, no. 12 (December 2014): 3414–24. http://dx.doi.org/10.1109/tmtt.2014.2363851.

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Moazzen, Hamidreza, Abbas Mohammadi, and Rashid Mirzavand. "Multilevel outphasing system using six-port modulators and doherty power amplifiers." Analog Integrated Circuits and Signal Processing 90, no. 2 (December 20, 2016): 361–72. http://dx.doi.org/10.1007/s10470-016-0908-9.

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