Academic literature on the topic 'Dispositifs opto-électroniques'
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Journal articles on the topic "Dispositifs opto-électroniques":
Podoleanu, A. Gh, I. M. Popescu, and P. E. Sterian. "Variante simple de mode-locking avec applications dans la mesure du temps de réponse des dispositifs opto-électroniques." Revue de Physique Appliquée 21, no. 4 (1986): 277–82. http://dx.doi.org/10.1051/rphysap:01986002104027700.
Dissertations / Theses on the topic "Dispositifs opto-électroniques":
Fierling, Géraldine. "Simulation des phénomènes de relaxation élastique dans les dispositifs opto-électroniques contraints." Ecully, Ecole centrale de Lyon, 1998. http://www.theses.fr/1998ECDL0054.
Martin, Matthieu. "Dispositifs opto-électroniques térahertz excités par des signaux optiques aux longueurs d'ondes télécoms." Paris 11, 2010. http://www.theses.fr/2010PA112282.
Terahertz (THz) radiation typically corresponds to the frequencies included between 100 GHz and 10 THz. Interest for these electromagnetic waves has risen dramatically since the advent of femtosecond lasers and THz optoelectronic sources and detectors in the 1980s. Ln our days, THz optoelectronic devices are mainly made with Low-Temperature Growth GaAs. This material implies the use of optical excitation wavelength around 800 nm. Ln order to improve the performances of THz systems, one way is to use lasers which are more stable and give access to fiber technology. Wide choices of such sources exist at the telecom wavelength and can contribute to the diffusion of modern THz systems. It is in this context that we studied optical and electric properties of Ga0,491 In0,509 As / Ga0,491 In0,509 Nx As1-x superlattice structures grown on InP substrate. By optimizing the N concentration of the Ga0,491 In0,509 Nx As1-x layers, we reduced the carrier lifetime down to picosecond values. We also realized a THz time domain spectroscopy system using optical pulses at the telecom wavelength. The emitter is an ion-irradiated Ga0,47 In0,53 As photoconductive antenna and the detector is based on the detection of the phase modulation of an optical probe beam into an electro-optic DAST crystal. This system shows frequencies up to 5 THz with a maximum dynamic of 40 dB. At last, we have demonstrated the efficient transfer of a gigahertz modulation from an optical carrier at telecom wavelengths to a free space terahertz beam. This demonstration is the first step toward the realization of a wireless transmission onto a THz carrier
Boussoufi, Félix. "Nanocristaux semi-conducteurs colloïdaux pour dispositifs opto-électroniques : synthèse et stabilité sous contraintes thermiques et optiques." Electronic Thesis or Diss., Sorbonne université, 2021. http://www.theses.fr/2021SORUS231.
Colloidal semiconductor nanocrystals have become during the last thirty years a class of materials that can address new technological solutions for many applications, such as light emitting diodes, solar cells, infrared photodetectors, medical imaging systems, etc. Nevertheless, these nanocrystals suffer from poor stability against external stress (heat, light, humidity, oxygen), limiting their use in many applications. Today, it is therefore necessary to study the physicochemical phenomena at the origin of their degradation and to propose new solutions to improve their stability. The main objective of this thesis was to develop an ink of lead sulfide quantum dots (PbS QDs) for a near-infrared photodetector, with stable optoelectronic properties under thermal stress (150 °C for 3 h). The manuscript first presents a study of nanocrystals films made of PbS QDs capped with halide ligands, NH4I and PbX2 (X = I, Br). The optical and photoconductive properties degrade rapidly under the effect of heat, mainly because of the formation of a Pb5S2I6 parasitic phase and of the coalescence of the nanocrystals. An ink of PbS QDs stabilized by CsPbI3 perovskite precursors was subsequently developed. This formulation provides more thermally stable nanocrystal films with better preserved optical, structural and photoconductive properties. These PbS-CsPbI3 QDs films were integrated into a near-infrared (940 nm) photodiode-type photodetector, demonstrating an external quantum efficiency of nearly 49% and a dark current of 10-5 A/cm2, after undergoing the thermal treatment of 150 °C for 3 h. Finally, a spray-drying polymer encapsulation method for CsPbBr3 perovskite nanocrystals is presented. The composite beads, made of acrylate-based polymers, possess a photoluminescence quantum yield of 35% with a fluorescence peak at 518 nm and a half-value width of 22 nm. The encapsulation of the nanocrystals allows an improvement of their photostability, with a stable green emission after 200 h under continuous illumination in an LED/nanocrystal downconverter device
Karray, Mohamed. "Contribution à la modélisation hiérarchique de systèmes opto-électroniques à base de VHD-AMS." Paris, ENST, 2004. http://www.theses.fr/2004ENST0044.
In a technological context in which the integration degree in micro and optoelectronic circuits increases more and more, it becomes necessary for the designers to get complete simulation tools, in order to study not only the behavior of different constitutive elements of sub-systems that they design, but also to evaluate global performances of the system. This thesis work concerns the design of opto-electronic component models, by using VHDL-AMS language. This language is very convenient for multi-domain modelling : electronics, optics, thermics or mechanics. It gives also the capability to get models at different abstraction levels in the system. Our work is a part of SHAMAN project. Its objective is to model every component of an opto-electronic system with the conditions of high speed, short distance, and strong thermal and mechanical interactions. The methodology used is hierarchical, combining top-down and bottom-up design flow in order to get optimal solutions about performances, cost and design time, and by re-using virtual components following intellectual property rules (IP)
Laforest, Timothé. "Nouveaux dispositifs intégrés pour l'analyse et le contrôle de lumière cohérente : conception conjointe de circuits opto-électroniques et systèmes optiques." Thesis, Grenoble, 2014. http://www.theses.fr/2014GRENT113/document.
Among the optical medical imaging techniques used in medicine, the main limitation is the low resolution at a penetration depth greater than a few mm. This limitation does not allows competing with the standard imaging techniques such as X rays or RMI based imaging. In that scope, the acousto-optical imaging features several advantages: it allows measuring an optical contrast useful to detect tumors, in conjunction with the spatial resolution of ultrasound. However, the state of the art detecting devices feature a lack of sensitivity, which prevent its transfer to medical practitioners.This leads us to study the intrinsic features of the acousto-optical signal in order to propose two CMOS pixel architectures. The first one, fully analog, is compliant with the correlation time of biological tissue (1 ms typ.) and features an analog processing of the relevant signal. The second one is based on a digital pixel which contains an analog to digital converter, allowing simplifying the optical setup and increasing the robustness of the processing.In addition, related to the recent progress in wavefront control, an opto-electronic device, coupled with the first pixel architecture, has been proposed. It allows performing an optical phase operation (e.g. phase conjugation) in parallel on a pixels array, within the correlation time of biological media. Thus, this monolithic device circumvents the speed limitations of state of the art setup by a physical stacking of a liquid crystals spatial light modulator over a CMOS image sensor
Alves, Alves Estefania. "Émission de photons dans un microscope à effet tunnel : application à l'étude des propriétés optiques et électroniques de systèmes hybrides métal-semi-conducteur." Electronic Thesis or Diss., Toulouse 3, 2023. http://www.theses.fr/2023TOU30351.
Transition metal dichalcogenides (TMDs) are a family of semiconductors that exhibit a direct bandgap when their thickness is reduced to a monolayer, giving them remarkable optical and electronic properties, including high-efficiency luminescence. Photon emission from these monolayers is investigated using the STM-LE (Light Emission induced by Scanning Tunneling Microscopy) technique. This innovative method involves the localized injection of charge carriers into TMD monolayers through the tunneling current. This process results in the formation of excitons, electron-hole pairs bound by Coulomb forces, within the TMD monolayer. These excitons decay radiatively emitting photons whose energy corresponds to the direct bandgap of the semiconductor. This light emission process is experimentally studied using an STM microscope combined with a light detection system, enabling spectral and spatial analysis of the photon emission with nanometer-scale resolution. The electromagnetic interaction between TMD layers and their metallic substrates leads to the formation of hybrid metal-semiconductor structures, the optical and electronic properties of which are under investigation. The nature of the substrate (plasmonic or non-plasmonic) and its morphology (uniform or nanostructured) play a crucial role in both the intensity and spectral distribution of the emitted photons. Indeed, for plasmonic substrates, the photon emission process involves the electromagnetic coupling between plasmon modes excited by electron tunneling and excitons confined within the TMD monolayer. This interaction leads to an enhancement of the photon emission. Moreover, by tuning the morphology of the substrate, it becomes possible to modify this coupling and thus, the photon emission rate. Considering the significant role of the electromagnetic interaction between plasmon modes and excitons in the luminescence from TMD monolayers within a hybrid TMD/metal-plasmonic STM junction, electromagnetic numerical simulations are carried out using the DDA (Discrete Dipole Approximation) method. These simulations account for electron tunneling using the Quantum Corrected Model. By simulating the optical response of the junction to an incident excitation wave, the electromagnetic modes within the junction and their dependence on the tunneling parameters, such as tip-surface distance and bias voltage, are investigated. In particular, gap plasmon modes and the Fano-type plasmon-exciton coupling at the interface between the monolayer and the plasmon substrate are pointed out. Furthermore, the role of substrate morphology on the properties of these modes is also addressed. Based on theoretical models describing the light emission taking place in purely metallic STM junctions proposed in the literature, a model is developed to compute theoretical light emission spectra for a hybrid TMD/plasmonic-metal STM junction. This model takes into account the optical and electronic properties of the TMD monolayer, and the electron tunneling as the excitation source at the origin of the light emission phenomenon. In addition, using the results obtained from the numerical simulations, the electromagnetic coupling between the excitons confined in the TMD monolayer and the plasmons excited in the nanocavity formed by the tip-surface configuration of the STM is also considered. Finally, the effect of the substrate morphology on the light emission is studied theoretically. These results are compared with the experimental findings in order to validate the model presented
Hallak, Elwan Hamza. "Systèmes optiques dédiés à la 5° génération de réseaux sans fils (5G)." Thesis, Université Grenoble Alpes (ComUE), 2017. http://www.theses.fr/2017GREAT047/document.
This thesis is for the development of future devices, systems and networks supporting the 5th Generation (5G) high-speed wireless internet. The demand for very high bit rate requires a sufficient large bandwidth, and therefore Millimeter-Wave (mm-wave) frequency band has a lot of interest. Several number of technologies will need to converge, co-exist and interoperate, and most importantly, cooperate, if this vision is to be efficiently and cost-effectively realized. The main concept within this next 5G is the integration of optical fiber networks and radio networks through Radio-over-Fiber (RoF) technology at mm-wave frequencies, to provide high-bandwidth front/backhaul services and enable scalable and manageable networks without a highly complex interface structure and multiple overlaid protocols.In this thesis, the mm-wave RoF communication systems are theoretically studied and experimentally demonstrated to investigate the system impairments. The work presented in this thesis is focused on optical noise represented by phase and intensity noise induced by optical source and chromatic dispersion introduced by optical fiber. The optical noise is analyzed and measured for different optical generation techniques. Two different down-conversion stages, mixer and envelope detector, are applied for signal processing and to decorrelate phase and intensity noise. We would like to highlight that this study and the model can be applicable toany kind of optical heterodyne generation system and any frequency range. The correlation among optical modes in optical frequency comb is examined to show the impact of chromatic dispersion. This thesis also exhibits the mm-wave power distribution over fiber span and how the chromatic dispersion effect on the RoF network is modified by varying dispersion parameters. Then, this thesis demonstrates how the optical phase decorrelation induced by chromatic dispersion results in mode partition noise at mm-wave RoF communication networks.When transmitting some types of data over the system, the results demonstrate the impact of optical noise and chromatic dispersion on the signal quality. The simulation results are presented and are in very good agreement with experimental results. The error vector magnitudethrough online process shows the impact of the system impairments on the system performance. The data rate and system evolution are compliance with communication standards at mm-wave
Pes, Salvatore. "Nanostructures-based 1.55 μm-emitting Vertical-(External)-Cavity Surface-Emitting Lasers for microwave photonics and coherent communications." Thesis, Rennes, INSA, 2019. https://tel.archives-ouvertes.fr/tel-02892844.
The work presented in this dissertation focus on the development of InP-based semiconductor vertical-cavity lasers, based on quantum nanostructures and emitting at the telecom wavelengths (1550-1600 nm). A new technological process for the realization of compact VCSELs is described. This process (named TSHEC) has been employed to realize optically-pumped VCSELs, integrated onto a host Silicon platform, with good performances. The same process has been adapted to develop an electrically-driven version of VCSELs: a preliminary study of the confinement section based on a InGaAs-BTJ is presented, together with the development of a mask set. Thanks to the development of the liquid crystals μ-cell technology (in collaboration with LAAS, IMT Atlantique et C2N), we realized a tunable photodiode at 1.55 μm, and a tunable VCSEL is currently under development. This work also presents the first realization of a 1.6 μm- emitting optically-pumped quantum dashes-based VECSELs, and its characterization in multi-mode and single-frequency regime. Finally, the realization of an experimental setup for the investigation of the coupling between two orthogonal eigenstates of a bi- frequency 1.54 μm-emitting SQW-VECSEL has been conceived and realized. This setup, which allowed the direct quantification of the coupling constant on such a device, in the near future will allow performing the same study on anisotropic structures like quantum dashes or quantum dots, with the objective of studying the inhomogeneous broadening effect observed in these gain regions