Relevant bibliographies by topics / Disorder -Polycrystalline Oxides

Contents

  1. Journal articles

Academic literature on the topic 'Disorder -Polycrystalline Oxides'

Author: Grafiati
Published: 7 September 2023

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the lists of relevant articles, books, theses, conference reports, and other scholarly sources on the topic 'Disorder -Polycrystalline Oxides.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Journal articles on the topic "Disorder -Polycrystalline Oxides"

1

Vahidi, Hasti, Komal Syed, Huiming Guo, Xin Wang, Jenna Laurice Wardini, Jenny Martinez, and William John Bowman. "A Review of Grain Boundary and Heterointerface Characterization in Polycrystalline Oxides by (Scanning) Transmission Electron Microscopy." Crystals 11, no. 8 (July 28, 2021): 878. http://dx.doi.org/10.3390/cryst11080878.

Full text
Abstract:
Interfaces such as grain boundaries (GBs) and heterointerfaces (HIs) are known to play a crucial role in structure-property relationships of polycrystalline materials. While several methods have been used to characterize such interfaces, advanced transmission electron microscopy (TEM) and scanning TEM (STEM) techniques have proven to be uniquely powerful tools, enabling quantification of atomic structure, electronic structure, chemistry, order/disorder, and point defect distributions below the atomic scale. This review focuses on recent progress in characterization of polycrystalline oxide interfaces using S/TEM techniques including imaging, analytical spectroscopies such as energy dispersive X-ray spectroscopy (EDXS) and electron energy-loss spectroscopy (EELS) and scanning diffraction methods such as precession electron nano diffraction (PEND) and 4D-STEM. First, a brief introduction to interfaces, GBs, HIs, and relevant techniques is given. Then, experimental studies which directly correlate GB/HI S/TEM characterization with measured properties of polycrystalline oxides are presented to both strengthen our understanding of these interfaces, and to demonstrate the instrumental capabilities available in the S/TEM. Finally, existing challenges and future development opportunities are discussed. In summary, this article is prepared as a guide for scientists and engineers interested in learning about, and/or using advanced S/TEM techniques to characterize interfaces in polycrystalline materials, particularly ceramic oxides.
APA, Harvard, Vancouver, ISO, and other styles
2

ZHANG, A. M., H. L. CAI, X. S. WU, Z. H. WANG, and J. GAO. "PHASE SEPARATION INDUCED BY CATION DISORDER IN (La, Y)2/3(Sr, Ca)1/3MnO3." International Journal of Modern Physics B 25, no. 11 (April 30, 2011): 1501–9. http://dx.doi.org/10.1142/s0217979211100576.

Full text
Abstract:
Polycrystalline manganite oxides with different A-site cation disorder were synthesized. The hole concentration and average radius of A-site cation are kept unchanged while the A-site cation disorder increases linearly by Y and Sr co-doped in La 2/3 Ca 1/3 MnO 3. All these samples exhibit a paramagnetic insulator to ferromagnetic (FM) metal transition, and the transition temperature T C and T MI decrease while the transition width increases with increasing the A-site cation disorder. T MI is usually 10 K higher than T C for the small cation disorder samples. However, with increasing the cation disorder, T MI is about 60 K lower than T C , and the resistivity increases in magnitude while the magnetization decreases. The metal-to-insulator transition for samples with small cation disorder can be well described by a percolative model, which indicates FM-metal state and antiferromagnetic insulator state assuredly coexist in the transition interval. It reveals that cation disorder suppresses the long-range FM-metal state which results in the phase separation behavior in samples with large cation disorder.
APA, Harvard, Vancouver, ISO, and other styles
3

DEAC, I. G., A. VLĂDESCU, I. BALASZ, A. TUNYAGI, and R. TETEAN. "ELECTRICAL AND MAGNETIC BEHAVIOR OF TRANSITION METAL OXIDES Ln0.7A0.3TMO3, Ln= La, Pr; A = Ca, Sr AND TM = Mn, Co." International Journal of Modern Physics B 24, no. 06n07 (March 20, 2010): 762–69. http://dx.doi.org/10.1142/s0217979210064393.

Full text
Abstract:
We present a detailed magnetic study of the polycrystalline transition metal oxides Ln 0.7 A 0.3 TMO 3, Ln = La , Pr ; A = Ca , Sr and TM = Mn , Co at low temperatures including electrical resistance, magnetization and ac susceptibility measurements. The effect of the A-site and B-site substitutions on the properties of these compounds is discussed. The results of this analysis indicate that the electrical and magnetic behavior of these compounds have some reminiscences of the manganites having similar formula, but the spin disorder and the grain boundary effects control the properties of these materials.
APA, Harvard, Vancouver, ISO, and other styles
4

Marinov, Georgi, Biliana Georgieva, Marina Vasileva, and Tsvetanka Babeva. "Study of Structure, Morphology and Optical Properties of Cobalt-Doped and Co/Al-co-Doped ZnO Thin Films Deposited by Electrospray Method." Applied Sciences 13, no. 17 (August 25, 2023): 9611. http://dx.doi.org/10.3390/app13179611.

Full text
Abstract:
A versatile electrospray method was utilized for deposition of thin ZnO films doped with Co (5%) (CZO) or co-doped with Co (2.5%) and Al (2.5%) (CAZO). Thin polycrystalline films with approximate thickness of 200 nm and high transmittance (more than 80%) were obtained. No additional XRD peaks due to dopant impurities or dopant oxides were observed. The cobalt doping led to decrease in grain size and increase in crystallite size from 22 nm to 29 nm in the (101) direction. Smaller changes were observed for the CAZO films. Surface roughness of the films was measured using a 3D optical profiler. Surface roughness of the doped films was from 5 nm to 9 nm higher than that of the pure films. Refractive index, extinction coefficient and thickness of the films were calculated using ellipsometric measurements and were further used for determination of optical band gap and Urbach energy. Refractive index and optical band gap increased with doping from 1.86 and 3.29 eV for pure ZnO to 2.00 and 3.35 eV for CZO and 1.97 and 3.33 eV for CAZO films. Through calculation of Urbach energy (119 meV for pure ZnO, 236 meV for CZO and 138 meV for CAZO), it was demonstrated that doping leads to an increase in structural disorder, most pronounced in the case of Co doping.
APA, Harvard, Vancouver, ISO, and other styles
5

Han, Zhiyong, and Zhenzhu Jing. "The Low Temperature Specific Heat of Pr0.65Ca0.35MnO3." Advances in Condensed Matter Physics 2014 (2014): 1–4. http://dx.doi.org/10.1155/2014/394296.

Full text
Abstract:
The low temperature specific heat of polycrystalline perovskite-type Pr0.65Ca0.35MnO3manganese oxide has been investigated experimentally. It is found that the low temperature electron specific heat in zero magnetic field is obviously larger than that of ordinary rare-earth manganites oxide. To get the contribution of phonon to the specific heat precisely, the lattice specific heat is calculated by Debye model fitting. Results confirm that the low temperature specific heat of Pr0.65Ca0.35MnO3is related to the itinerant electrons in ferromagnetic clusters and the disorder in the sample.
APA, Harvard, Vancouver, ISO, and other styles
6

Cohen, Oded, and Zvi Ovadyahu. "1/f NOISE NEAR THE METAL-INSULATOR TRANSITION." International Journal of Modern Physics B 08, no. 07 (March 30, 1994): 897–903. http://dx.doi.org/10.1142/s0217979294000440.

Full text
Abstract:
The 1/f noise level in polycrystalline indium oxide thin films and of zinc oxide accumulation layers is found to be much higher than that usually observed in metals. A systematic study of the flicker noise properties in these systems reveals a correlation between the 1/f noise magnitude and the proximity of the system to the insulating phase. In fact, the noise appears to increase dramatically close to the Anderson transition but when the average transport properties exhibited by the system are still diffusive. For static disorder that exceeds the critical value characterized by KFl≃1 the system exhibits insulating behavior and the noise level saturates at a rather high, but disorder independent value. The similarity of these findings to the behavior of the magnetic-field-induced Conductance Fluctuations in this system will be pointed out to suggest a common physical origin. This leads to the prediction of high levels of 1/f in all electronic systems that are close to the metal-insulator transition.
APA, Harvard, Vancouver, ISO, and other styles
7

Guillén, Cecilia. "Polycrystalline WO3−x Thin Films Obtained by Reactive DC Sputtering at Room Temperature." Materials 16, no. 4 (February 6, 2023): 1359. http://dx.doi.org/10.3390/ma16041359.

Full text
Abstract:
Tungsten oxide thin films have applications in various energy-related devices owing to their versatile semiconductor properties, which depend on the oxygen content and crystalline state. The concentration of electrons increases with intrinsic defects such as oxygen vacancies, which create new absorption bands that give rise to colored films. Disorders in the crystal structure produce additional changes in the electrical and optical characteristics. Here, WO3−x thin films are prepared on unheated glass substrates by reactive DC sputtering from a pure metal target, using the discharge power and the oxygen-to-argon pressure ratio as control parameters. A transition from amorphous to polycrystalline state is obtained by increasing the sputtering power and adjusting the oxygen content. The surface roughness is higher and the bandgap energy is lower for polycrystalline layers than for amorphous ones. Moreover, the electrical conductivity and sub-bandgap absorption increase as the oxygen content decreases.
APA, Harvard, Vancouver, ISO, and other styles
8

OKUDA, TETSUJI, RYOICHI KAJIMOTO, MARIO OKAWA, and TOMOHIKO SAITOH. "EFFECTS OF HOLE-DOPING AND DISORDER ON THE MAGNETIC STATES OF DELAFOSSITE CuCrO2 HAVING A SPIN-3/2 ANTIFERROMAGNETIC TRIANGULAR SUBLATTICE." International Journal of Modern Physics B 27, no. 05 (January 21, 2013): 1330002. http://dx.doi.org/10.1142/s0217979213300028.

Full text
Abstract:
In this review, we will discuss the effects of itinerant hole and disorder produced by substitutions on the magnetic states of polycrystalline delafossite oxide CuCrO 2 having a spin-3/2 antiferromagnetic triangular sublattice. First, we will show the effects of hole-doping by the substitution of nonmagnetic Mg 2+ for magnetic Cr 3+ on the physical properties of CuCrO 2, and will discuss the origin of nontrivial promotion of the 120° Néel state due to the coupling between the itinerant hole and localized spin. Next, we will show the effects of disorder introduced by the isovalent substitutions such as the nonmagnetic Ag + substitution for nonmagnetic Cu + and the nonmagnetic Al 3+ one for magnetic Cr 3+, and will discuss the possibility of appearance of unusual magnetic states such as spin liquid or spin nematic states.
APA, Harvard, Vancouver, ISO, and other styles
9

Zhang, Jiahui, Xujun Su, Yutao Cai, Didi Li, Luhua Wang, Jingjing Chen, Xionghui Zeng, Jianfeng Wang, and Ke Xu. "Atomic-resolved structural and electric field analysis of the passivation interface of MIS-HEMTs." AIP Advances 12, no. 4 (April 1, 2022): 045111. http://dx.doi.org/10.1063/5.0087659.

Full text
Abstract:
The passivation interfaces of GaN-based MIS-HEMTs with Si3N4 and ZrO2/Si3N4 bilayers were investigated through atomic resolution scanning transmission electron microscope–energy dispersive spectroscopy–differential phase contrast microscopy methods. It is found that the Si3N4/GaN interface exhibits atomic disorder fluctuation, and the GaN surface is discontinuous at the depth of 1–2 atomic layers. An oxide layer of ∼2 nm is formed at the ZrO2/GaN interface, and the GaN surface is atomically flat. Furthermore, the local minimum of the potential is located at the Si3N4/GaN interface, while it is distributed in the GaN side at the ZrO2/GaN interface. The electric field or potential distribution is affected by the crystal orientation of the polycrystalline ZrO2 layer. Finally, the difference in passivation mechanism is discussed.
APA, Harvard, Vancouver, ISO, and other styles
10

Maaoui, B., Y. Aoun, S. Benramache, A. Nid, R. Far, and A. Touati. "Synthesis and Characterization of Physical Properties of the NiO Thin Films by Various Concentrations." Advances in Materials Science 20, no. 3 (September 1, 2020): 79–87. http://dx.doi.org/10.2478/adms-2020-0017.

Full text
Abstract:
AbstractIn this work, nickel oxide was deposited on a glass substrate at by spray deposition technique; the structural, optical and electrical properties were studied at different NiO concentrations (0.05, 0.10 and 0.15 mol.l−1). Polycrystalline NiO films with a cubic structure with a strong (111) preferred orientation were observed at all sprayed films with minimum crystallite size of 11.97 nm was attained of deposited film at 0.1 mol.l−1. However, α-Ni(OH)2 was observed at 0.15 mol.l−1. The NiO thin films have good transparency in the visible region, the band gap energy varies from 3.54 to 376 eV was affected by NiO concentration, it is shown that the NiO thin film prepared at 0.05 mol.l−1 has less disorder with few defects. The NiO film deposited at 0.15 mol.l−1 has the electrical conductivity was 0.169 (Ω.cm)−1.
APA, Harvard, Vancouver, ISO, and other styles
More sources
You might also be interested in the extended bibliographies on the topic 'Disorder -Polycrystalline Oxides' for particular source types:
Journal articles
We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!

To the bibliography