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Journal articles on the topic 'Disorder, Doping'

Author: Grafiati

Published: 6 September 2023

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1

Santos, Ricardo D. S., and Marcos V. dos S. Rezende. "Doping disorder and the reduction–doping process in LiSrPO4." Phys. Chem. Chem. Phys. 19, no. 40 (2017): 27731–38. http://dx.doi.org/10.1039/c7cp04566b.

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A systematic theoretical study was performed on trivalent and divalent rare-earth (RE) dopant ions in the LiSrPO₄ structure, using atomistic simulations based on lattice energy minimization.

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2

Jones, Carwyn. "Doping as addiction: disorder and moral responsibility." Journal of the Philosophy of Sport 42, no. 2 (January 6, 2015): 251–67. http://dx.doi.org/10.1080/00948705.2014.997743.

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3

Kabbaj, M., J. P. Albert, and C. Jouanin. "Effects of Doping Induced Disorder in Polyacetylene." Molecular Crystals and Liquid Crystals 117, no. 1 (February 1985): 205–8. http://dx.doi.org/10.1080/00268948508074625.

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4

Fediai, Artem, Anne Emering, Franz Symalla, and Wolfgang Wenzel. "Disorder-driven doping activation in organic semiconductors." Physical Chemistry Chemical Physics 22, no. 18 (2020): 10256–64. http://dx.doi.org/10.1039/d0cp01333a.

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5

Turkel, Simon, Joshua Swann, Ziyan Zhu, Maine Christos, K. Watanabe, T. Taniguchi, Subir Sachdev, et al. "Orderly disorder in magic-angle twisted trilayer graphene." Science 376, no. 6589 (April 8, 2022): 193–99. http://dx.doi.org/10.1126/science.abk1895.

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Magic-angle twisted trilayer graphene (TTG) has recently emerged as a platform to engineer strongly correlated flat bands. We reveal the normal-state structural and electronic properties of TTG using low-temperature scanning tunneling microscopy at twist angles for which superconductivity has been observed. Real trilayer samples undergo a strong reconstruction of the moiré lattice, which locks layers into near–magic-angle, mirror symmetric domains comparable in size with the superconducting coherence length. This relaxation introduces an array of localized twist-angle faults, termed twistons and moiré solitons, whose electronic structure deviates strongly from the background regions, leading to a doping-dependent, spatially granular electronic landscape. The Fermi-level density of states is maximally uniform at dopings for which superconductivity has been observed in transport measurements.

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6

Zhang, Kai, Ren-Shu Wang, and Xiao-Jia Chen. "Order–disorder transition in p-oligophenyls." Physical Chemistry Chemical Physics 21, no. 25 (2019): 13590–99. http://dx.doi.org/10.1039/c9cp01924c.

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7

Queisser, Hans J. "Order and Disorder in Semiconductors." MRS Bulletin 20, no. 12 (December 1995): 43–49. http://dx.doi.org/10.1557/s0883769400045899.

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The pervasive impetus of modern semiconductor technology has become an accepted fact. Scientific mastering of materials and processes has increased tremendously within a short time frame. Technological control has been derived from this scientific base. An industry with more than $100 billion worth of silicon devices per annum in 1994 as well as incredibly high growth rates of production and applications is an economic reality in addition to being a matter of international industrial policy. The materials aspect of using perfected single crystals and applying local doping control provides the basis of this unusual success. Earlier usage of materials differed remarkably. Bronze and steel are used for their specific bulk properties. Shaping and connecting pieces is at the heart of iron-age or bronze-age technologies. Integration inside a regular spatial array of a host crystal is the semiconductor principle. The “Royal Road” to modern microelectronics consists of initially procuring a perfected single-crystal host, then locally establishing electrical and optical properties inside the host by specific replacements of host atoms by foreign “dopants.” The somewhat disparaging expression of defect as a generic term for all deviations from the host perfection does not really convey the power of this “doping doctrine” for semiconducting materials. The early pioneers of germanium and silicon however, placed great emphasis on the experimental verification that n-type and p-type doping by elements of the adjacent columns in the periodic table were accompanied by changes in the lattice parameter with atomic substitution of the host atoms as the guiding principle.

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8

Harigaya, Kikuo, Yasushi Wada, and Klaus Fesser. "Doping disorder and level structures in conjugated polymers." Synthetic Metals 43, no. 1-2 (June 1991): 3579–82. http://dx.doi.org/10.1016/0379-6779(91)91356-f.

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9

Tanaka, Hisaaki, Kaito Kanahashi, Naoya Takekoshi, Hiroaki Mada, Hiroshi Ito, Yukihiro Shimoi, Hiromichi Ohta, and Taishi Takenobu. "Thermoelectric properties of a semicrystalline polymer doped beyond the insulator-to-metal transition by electrolyte gating." Science Advances 6, no. 7 (February 2020): eaay8065. http://dx.doi.org/10.1126/sciadv.aay8065.

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Conducting polymer thin films containing inherent structural disorder exhibit complicated electronic, transport, and thermoelectric properties. The unconventional power-law relation between the Seebeck coefficient (S) and the electrical conductivity (σ) is one of the typical consequences of this disorder, where no maximum of the thermoelectric power factor (P = S2σ) has been observed upon doping, unlike conventional systems. Here, it is demonstrated that a thiophene-based semicrystalline polymer exhibits a clear maximum of P through wide-range carrier doping by the electrolyte gating technique. The maximum value appears around the macroscopic insulator-to-metal transition upon doping, which is firmly confirmed by the temperature dependence of σ and magnetoresistance measurements. The effect of disorder on charge transport is suppressed in the metallic state, resulting in the conventional S-σ relation described by the Mott equation. The present results provide a physical background for controlling the performance of conducting polymers toward the application to thermoelectric devices.

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10

Marinov, Georgi, Biliana Georgieva, Marina Vasileva, and Tsvetanka Babeva. "Study of Structure, Morphology and Optical Properties of Cobalt-Doped and Co/Al-co-Doped ZnO Thin Films Deposited by Electrospray Method." Applied Sciences 13, no. 17 (August 25, 2023): 9611. http://dx.doi.org/10.3390/app13179611.

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A versatile electrospray method was utilized for deposition of thin ZnO films doped with Co (5%) (CZO) or co-doped with Co (2.5%) and Al (2.5%) (CAZO). Thin polycrystalline films with approximate thickness of 200 nm and high transmittance (more than 80%) were obtained. No additional XRD peaks due to dopant impurities or dopant oxides were observed. The cobalt doping led to decrease in grain size and increase in crystallite size from 22 nm to 29 nm in the (101) direction. Smaller changes were observed for the CAZO films. Surface roughness of the films was measured using a 3D optical profiler. Surface roughness of the doped films was from 5 nm to 9 nm higher than that of the pure films. Refractive index, extinction coefficient and thickness of the films were calculated using ellipsometric measurements and were further used for determination of optical band gap and Urbach energy. Refractive index and optical band gap increased with doping from 1.86 and 3.29 eV for pure ZnO to 2.00 and 3.35 eV for CZO and 1.97 and 3.33 eV for CAZO films. Through calculation of Urbach energy (119 meV for pure ZnO, 236 meV for CZO and 138 meV for CAZO), it was demonstrated that doping leads to an increase in structural disorder, most pronounced in the case of Co doping.

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11

Finsterer, Josef. "Doping May Be Responsible for De Novo Mitochondrial Disorder." Advanced Pharmaceutical Bulletin 9, no. 2 (June 1, 2019): 180–81. http://dx.doi.org/10.15171/apb.2019.021.

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12

Jarlborg, T. "Electronic Structure, Doping, Order and Disorder in Cuprate Superconductors." Journal of Superconductivity and Novel Magnetism 29, no. 3 (December 4, 2015): 637–42. http://dx.doi.org/10.1007/s10948-015-3289-x.

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13

Ślebarski, Andrzej, and Maciej M. Maśka. "Enhancing Superconductivity of the Nonmagnetic Quasiskutterudites by Atomic Disorder." Materials 13, no. 24 (December 21, 2020): 5830. http://dx.doi.org/10.3390/ma13245830.

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We investigated the effect of enhancement of superconducting transition temperature Tc by nonmagnetic atom disorder in the series of filled skutterudite-related compounds (La3M4Sn13, Ca3Rh4Sn13, Y5Rh6Sn18, Lu5Rh6Sn18; M= Co, Ru, Rh), where the atomic disorder is generated by various defects or doping. We have shown that the disorder on the coherence length scale ξ in these nonmagnetic quasiskutterudite superconductors additionally generates a non-homogeneous, high-temperature superconducting phase with Tc⋆>Tc (dilute disorder scenario), while the strong fluctuations of stoichiometry due to increasing doping can rapidly increase the superconducting transition temperature of the sample even to the value of Tc⋆∼2Tc (dense disorder leading to strong inhomogeneity). This phenomenon seems to be characteristic of high-temperature superconductors and superconducting heavy fermions, and recently have received renewed attention. We experimentally documented the stronger lattice stiffening of the inhomogeneous superconducting phase Tc⋆ in respect to the bulk Tc one and proposed a model that explains the Tc⋆>Tc behavior in the series of nonmagnetic skutterudite-related compounds.

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14

GHORBANI, S. R., and F. ABRINAEY. "THE NORMAL STATE HALL EFFECT IN NdBa2-xLaxCu3O7-δ: EVIDENCE FOR HOLE LOCALIZATION BY LA DOPING." International Journal of Modern Physics B 23, no. 31 (December 20, 2009): 5779–88. http://dx.doi.org/10.1142/s0217979209052315.

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The transport properties of sintered samples of NdBa 2-x La x Cu 3 O 7-δ with 0 ≤ x ≤ 0.3 have been studied in the normal state by Hall effect measurements. The Hall coefficient, RH is positive in the normal state and increases with increasing La doping concentration over the whole temperature range from the critical temperature, Tc, up to room temperature. The results for the Hall coefficient as a function of temperature and doping concentration were analyzed within the phenomenological narrow band and Anderson models. A good agreement between models and data was obtained. As in the phenomenological narrow band model, the band widths increase with increasing doping concentration. As in the Anderson model, the Hall angle is proportional to T2 over the whole measured temperature range for all samples. The obtained results for both models supported the view that La doping introduces electronic disorder into the CuO 2 planes. The tendency towards localization is driven by electronic disorder. In addition to hole filling, the localization is another reason for the decreasing superconducting critical temperature in these samples.

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15

Yan, Hui Yu, Yan Rui Guo, and Qing Gong Song. "The Structures and Electronic Properties of Composite Material (La_xAl_1-X)₂O₃ from First-Principles Study." Advanced Materials Research 583 (October 2012): 158–61. http://dx.doi.org/10.4028/www.scientific.net/amr.583.158.

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The structures and electronic properties of (LaxAl1-x)2O3 are studied by first-principles calculation method. The results show that the composite material (LaxAl1-x)2O3 tend to be in sixfold-coordinated structure when x0.7. (LaxAl1-x)2O3 is in disorder structure and get the minimum band gap when x equals about 0.7. It suggest that (LaxAl1-x)2O3 can be synthesized as high dielectric constant material by doping La2O3 with a lower Al dopant concentrations or by fabricating (LaxAl1-x)2O3 with rich Al content.

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16

Islam, R. S., and S. H. Naqib. "Doping and disorder dependent isotope exponent in hole doped cuprates." Journal of Physics: Conference Series 1718 (January 2021): 012005. http://dx.doi.org/10.1088/1742-6596/1718/1/012005.

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17

Serevičius, Tomas, Rokas Skaisgiris, Dalius Gudeika, Karolis Kazlauskas, and Saulius Juršėnas. "Conformational disorder enabled emission phenomena in heavily doped TADF films." Physical Chemistry Chemical Physics 24, no. 1 (2022): 313–20. http://dx.doi.org/10.1039/d1cp04905d.

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Increasing the doping load of a TADF emitter in a solid host enables triplet migration and subsequent quenching of long-lived delayed emission. This enables an emission peak shift and an rISC rate increase, though at the cost of a lowered emission yield.

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18

Yang, Kewei, Xiaoyu Chen, Zhenhuan Zheng, Jiaqi Wan, Miao Feng, and Yan Yu. "Solvent-induced surface disorder and doping-induced lattice distortion in anatase TiO2 nanocrystals for enhanced photoreversible color switching." Journal of Materials Chemistry A 7, no. 8 (2019): 3863–73. http://dx.doi.org/10.1039/c8ta10045d.

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19

Nguyen, Thanh H., and Stephen K. O’Leary. "The dependence of the Fermi level on temperature, doping concentration, and disorder in disordered semiconductors." Journal of Applied Physics 88, no. 6 (September 15, 2000): 3479–83. http://dx.doi.org/10.1063/1.1289078.

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20

Bairamov, B. H., V. Yu Rud', and Yu V. Rud'. "Properties of Dopants in ZnGeP2, CdGeAs2, AgGaS2 and AgGaSe2." MRS Bulletin 23, no. 7 (July 1998): 41–44. http://dx.doi.org/10.1557/s0883769400029080.

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Ternary-chalcopyrite structure ZnGeP2, CdGeAs2 (II-IV-V2) and AgGaS2, AgGaSe2 (I-III-VI2) compounds are currently of technological interest. They show the most promise for practical nonlinear optical applications in the areas of high-efficiency optical parametric oscillators and frequency up-converters for the infrared (ir) range as well as for widespectral-range optoelectronic devices. (See also the article by Schunemann, Schepler, and Budni in this issue.) However extensive realization of their potential has still not been achieved. One of the principal difficulties in the way to obtaining high-device-quality ZnGeP2, CdGeAs2, AgGaS2, and AgGaSe2 single crystals is undesired optical absorption in their transparency range near the fundamental band edge induced by lattice-related defects. This article summarizes selected aspects of dopant-incorporation techniques of these crystals including dopant choice of dopant material and monitoring of dopant incorporation as done in our laboratory.In general for the ternary chalcopyrite compounds, doping-incorporation processes are more complicated in comparison to those of binary zinc-blende III-V compounds. The most common sources of dominant incorporation of acceptors and donors in as-grown chalcopyrites are believed to appear from (1) nonstoichiometric melts as well as by doping with different elements during the growth process and (2) incomplete removal of disorder on the cation sublattice during subsequent cooling. Furthermore the chalcopyrite structure II-IV-V2 undergoes a disorder-order phase transition upon cooling through approximately 1220 K for ZnGeP2 and 900 K for CdGeAs2. At these transition temperatures, solidification can be complicated also by supercooling phenomena, and the crystals transform from the cubic zinc-blende structure (where Zn atoms randomly fill cation sites) to the ordered chalcopyrite structure (e.g., when Zn and Ge occupy alternating cation sites in ZnGeP2).

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21

Lee, Youngseok, Vinh Ai Dao, Sangho Kim, Sunbo Kim, Hyeongsik Park, Jaehyun Cho, Shihyun Ahn, and Junsin Yi. "The Compromise Condition for High Performance of the Single Silicon Heterojunction Solar Cells." International Journal of Photoenergy 2012 (2012): 1–6. http://dx.doi.org/10.1155/2012/283872.

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For optimum performance of the hydrogenated amorphous silicon/crystalline silicon (a-Si : H/c-Si) heterojunction solar cells, featuring a doping concentration, localized states, as well as thickness of emitter layer are crucial, since Fermi level, surface passivated quality, and light absorption have to be compromised themselves. For this purpose, the effect of both doping concentration and thickness of emitter layer was investigated. It was found that with gas phase doping concentration and emitter layer thickness of 3% and 7 nm, solar cell efficiency in excess of 14.6% can be achieved. For high gas phase doping concentration, the degradation of open-circuit voltage as well as cell efficiency was obtained due to the higher disorder in the emitter layer. The heavily doped along with thicker in thickness of emitter layer results in light absorption on short wavelength, then diminishing short-circuit current density.

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22

Rao, M. S. Ramachandra, V. Ravindranath, and R. Gross. "Evidence of reduction in spin disorder by Ho3+doping in La0.7Ca0.3MnO." Philosophical Magazine 83, no. 13 (January 2003): 1631–43. http://dx.doi.org/10.1080/1478643031000082580.

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23

Maity, Sumit Ranjan, Monica Ceretti, Lukas Keller, Jürg Schefer, Tian Shang, Ekaterina Pomjakushina, Martin Meven, Denis Sheptyakov, Anonio Cervellino, and Werner Paulus. "Structural disorder and magnetic correlations driven by oxygen doping in Nd2NiO4.11." Acta Crystallographica Section A Foundations and Advances 75, a2 (August 18, 2019): e393-e393. http://dx.doi.org/10.1107/s2053273319091630.

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24

Li, Huashan, and Jeffrey C. Grossman. "Graphene Nanoribbon Based Thermoelectrics: Controllable Self- Doping and Long-Range Disorder." Advanced Science 4, no. 8 (March 31, 2017): 1600467. http://dx.doi.org/10.1002/advs.201600467.

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25

Singh, Priyanka, Brajendra Singh, and Mukul Gupta. "Chemical disorder induced positive magnetoimpedance in La0.7Pb0.3Mn0.35Fe0.65O3−δ and La0.7Pb0.3Mn0.3Fe0.7O3−δ manganites." European Physical Journal Applied Physics 93, no. 3 (March 2021): 30601. http://dx.doi.org/10.1051/epjap/2021200333.

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We report structural, magnetic and magnetoimpedance properties of La0.7Pb0.3Mn0.35Fe0.65O3−δ and La0.7Pb0.3Mn0.3Fe0.7O3−δ manganites. Bulk samples were prepared by solid state method. Rietveld refinement of the X-ray diffraction pattern shows the crystallization of these samples in trigonal crystal system. Fe doping at Mn site in La0.7Pb0.3MnO3 increases the lattice parameters and induces oxygen non stoichiometry in the lattice of La0.7Pb0.3Mn0.35Fe0.65O3−δ and La0.7Pb0.3Mn0.3Fe0.7O3−δ. La0.7Pb0.3Mn0.3Fe0.7O3−δ composition shows ∼180% positive magnetoimpedance at 1 Tesla magnetic field while La0.7Pb0.3Mn0.35Fe0.65O3−δ shows ∼75% positive magnetoimpedance at 320 K. Magnetization versus applied magnetic field measurement curves show the magnetic moment of La0.7Pb0.3Mn0.35Fe0.65O3−δ and La0.7Pb0.3Mn0.3Fe0.7O3−δ do not saturate up to 2 tesla magnetic field at 300 K. Fe+3 doping at Mn site in these manganites created chemically modified phase separated systems. Huge positive magnetoimpedance in 65% and 70% Fe doped manganites originated by maxwell wagner effect due to the chemical disorder induced phase separated states and dominated coulombic interactions.

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26

Ranchoux, B., and J. F. Currie. "Étude des corrélations entre paramètres de préparation, caractéristiques électriques et physico-chimiques d'échantillons de a-Si : H dopés ou non." Canadian Journal of Physics 63, no. 1 (January 1, 1985): 54–58. http://dx.doi.org/10.1139/p85-009.

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Using linear and second-degree regression, we have studied correlations between measurements of electrical conductivity, activation energy, concentration of the various elements (hydrogen, carbon, oxygen, argon, and eventually a dopant: indium, thalium, or antimony), thickness, and some preparation parameters: deposition temperature, mass flow ratio between the various gases intervening in the plasma, and deposition time. We have shown that the deposition rate is the only parameter, in the range studied, that plays an important role for the composition of the intrinsic films. The other parameters, viz. flow ratios of the various gases present in the mixture, temperature, have a limited influence on the composition and the electrical characteristics. The chemical composition measurements have been directly correlated with the electrical measurements. The introduction of a doping metal in the material modifies not only its opto-electrical characteristics, but generally its hydrogen content. Our process of doping by evaporation follows the "universal" behaviour of metals from columns II and V, already known in hydrogenated amorphous silicium. For the p and n films, we have observed that the hydrogen concentration and the width of the energy gap increase first with the dopant concentration and decrease afterwards. The presence of a dopant in the amorphous material leads to a disorder restructuring that changes the chemical composition more than the density of states in the energy gap.

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27

Zelený, Martin, and Ivo Dlouhý. "Different Ab Initio Approaches for Doping Descriptions: Tetragonal Deformation of Ni-Mn-Ga Alloys." Solid State Phenomena 258 (December 2016): 37–40. http://dx.doi.org/10.4028/www.scientific.net/ssp.258.37.

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The influence of Co and Cu doping on Ni-Mn-Ga alloy is investigated using the different ab initio methods for description of chemical disorder. The exact muffin-tin orbital method in combination with the coherent-potential approximation provides almost identical profiles of total energies along the tetragonal deformation path compared to the supercell approach used within the projector-augmented wave method. On the other hand, the simple virtual crystal approximation exhibits different results and thus it is not able to describe doping in Ni-Mn-Ga alloy properly.

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28

Tarkowski, T., T. Słupiński, and K. Karpierz. "Studies of Magnetoresistance in GaAs:Te Crystals with Structural Disorder at Doping Limit." Acta Physica Polonica A 119, no. 5 (May 2011): 726–28. http://dx.doi.org/10.12693/aphyspola.119.726.

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29

Kim, J. H., S. X. Dou, Sangjun Oh, M. Jerčinović, E. Babić, T. Nakane, and H. Kumakura. "Correlation between doping induced disorder and superconducting properties in carbohydrate doped MgB2." Journal of Applied Physics 104, no. 6 (September 15, 2008): 063911. http://dx.doi.org/10.1063/1.2980275.

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30

Pablo-Pedro, Ricardo, Miguel Angel Magaña-Fuentes, Marcelo Videa, Jing Kong, Mingda Li, Jose L. Mendoza-Cortes, and Troy Van Voorhis. "Understanding Disorder in 2D Materials: The Case of Carbon Doping of Silicene." Nano Letters 20, no. 9 (July 29, 2020): 6336–43. http://dx.doi.org/10.1021/acs.nanolett.0c01775.

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31

Chatterji, Tapan, Bachir Ouladdiaf, P. Mandal, and B. Ghosh. "Orbital order–disorder transition in La1−xBaxMnO3 in the low-doping region." Solid State Communications 131, no. 2 (July 2004): 75–80. http://dx.doi.org/10.1016/j.ssc.2004.04.041.

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32

Skuja, L., K. Kajihara, Y. Ikuta, M. Hirano, and H. Hosono. "Urbach absorption edge of silica: reduction of glassy disorder by fluorine doping." Journal of Non-Crystalline Solids 345-346 (October 2004): 328–31. http://dx.doi.org/10.1016/j.jnoncrysol.2004.08.038.

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33

Huang, Tung-Ching, and Wen-Feng Hsieh. "Destruction of the short-range disorder due to erbium doping in Pb0.8La0.2TiO3films." Journal of Raman Spectroscopy 41, no. 5 (September 21, 2009): 553–57. http://dx.doi.org/10.1002/jrs.2474.

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34

Sharma, Ankur, Pinki Yadav, R. Bhatt, Soma Banik, Gurvinderjit Singh, and Indranil Bhaumik. "Effect of Nb substitution on the electronic property of lead-free piezoelectric (Na_0.41K_0.09Bi_0.50)TiO₃ single crystal: Optical absorption and photoelectron study." Journal of Applied Physics 132, no. 20 (November 28, 2022): 205103. http://dx.doi.org/10.1063/5.0124508.

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Single crystals of undoped and Nb doped sodium and potassium-bismuth titanate at the morphotropic phase boundary (MPB) composition [(Na0.41K0.09Bi0.50)TiO3: NKBT] were grown from high temperature solutions. The effect of Nb doping on the electronic property of NKBT was investigated by optical transmission and photoelectron spectroscopy (PES). The optical absorption shows that the bandgap having the lowest energy is indirect in nature and increases with the increase in the Nb concentration in the lattice. The estimated Urbach energy increases with the increase of Nb concentration signifying an increase in the disorder in the lattice on Nb doping. The PES revealed that the valence band maxima (VBM) exhibit red shift on Nb doping. It also revealed the presence of in-gap states probably due to Ti3+ defect and oxygen vacancy. Moreover, inline with the optical measurement, the PES showed that there is a decrease in the energy gap between the VBM and defect state with the Nb doping. Furthermore, the angle resolved PES measurement confirmed the presence of both the direct and indirect bandgaps in the crystal.

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35

Boubaker, K., A. Colantoni, and P. Petkova. "The Lattice Compatibility Theory: Supports from the Generalized Simha-Somcynsky Chemical Physics-Related Theory." International Journal of Chemical Physics 2013 (August 5, 2013): 1–6. http://dx.doi.org/10.1155/2013/728040.

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The earliest models used in the study of lattice structures are mean field theories, which do not contain structural dependence. The Lattice Compatibility Theory (LCT) proposes here a novel framework where the measure of the disorder is based on Urbach tailing features and lattice matching features between the host matrix and doping agent intrinsic structures. This study has been implemented on a particular compound (BTO:Co) and refers to the Simha-Somcynsky (SS) theory, a mean field theory where the measure of the disorder is stated as holes.

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36

Tuccillo, Mariarosaria, Lorenzo Mei, Oriele Palumbo, Ana Belén Muñoz-García, Michele Pavone, Annalisa Paolone, and Sergio Brutti. "Replacement of Cobalt in Lithium-Rich Layered Oxides by n-Doping: A DFT Study." Applied Sciences 11, no. 22 (November 9, 2021): 10545. http://dx.doi.org/10.3390/app112210545.

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The replacement of cobalt in the lattice of lithium-rich layered oxides (LRLO) is mandatory to improve their environmental benignity and reduce costs. In this study, we analyze the impact of the cobalt removal from the trigonal LRLO lattice on the structural, thermodynamic, and electronic properties of this material through density functional theory calculations. To mimic disorder in the transition metal layers, we exploited the special quasi-random structure approach on selected supercells. The cobalt removal was modeled by the simultaneous substitution with Mn/Ni, thus leading to a p-doping in the lattice. Our results show that cobalt removal induces (a) larger cell volumes, originating from expanded distances among stacked planes; (b) a parallel increase of the layer buckling; (c) an increase of the electronic disorder and of the concentration of Jahn–Teller defects; and (d) an increase of the thermodynamic stability of the phase. Overall p-doping appears as a balanced strategy to remove cobalt from LRLO without massively deteriorating the structural integrity and the electronic properties of LRLO.

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37

Verde, Jose C., Alberto S. Viz, Martín M. Botana, Carlos Montero-Orille, and Manuel V. Ramallo. "Calculations of Some Doping Nanostructurations and Patterns Improving the Functionality of High-Temperature Superconductors for Bolometer Device Applications." Nanomaterials 10, no. 1 (January 3, 2020): 97. http://dx.doi.org/10.3390/nano10010097.

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We calculate the effects of doping nanostructuration and the patterning of thin films of high-temperature superconductors (HTS) with the aim of optimizing their functionality as sensing materials for resistive transition-edge bolometer devices (TES). We focus, in particular, on spatial variations of the carrier doping into the CuO 2 layers due to oxygen off-stoichiometry, (that induce, in turn, critical temperature variations) and explore following two major cases of such structurations: First, the random nanoscale disorder intrinsically associated to doping levels that do not maximize the superconducting critical temperature; our studies suggest that this first simple structuration already improves some of the bolometric operational parameters with respect to the conventional, nonstructured HTS materials used until now. Secondly, we consider the imposition of regular arrangements of zones with different nominal doping levels (patterning); we find that such regular patterns may improve the bolometer performance even further. We find one design that improves, with respect to nonstructured HTS materials, both the saturation power and the operating temperature width by more than one order of magnitude. It also almost doubles the response of the sensor to radiation.

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38

Adhikari, Rajdeep, Bogdan Faina, Verena Ney, Julia Vorhauer, Antonia Sterrer, Andreas Ney, and Alberta Bonanni. "Effect of Impurity Scattering on Percolation of Bosonic Islands and Superconductivity in Fe Implanted NbN Thin Films." Nanomaterials 12, no. 18 (September 7, 2022): 3105. http://dx.doi.org/10.3390/nano12183105.

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A reentrant temperature dependence of the thermoresistivity ρxx(T) between an onset local superconducting ordering temperature Tloconset and a global superconducting transition at T=Tglooffset has been reported in disordered conventional 3-dimensional (3D) superconductors. The disorder of these superconductors is a result of either an extrinsic granularity due to grain boundaries, or of an intrinsic granularity ascribable to the electronic disorder originating from impurity dopants. Here, the effects of Fe doping on the electronic properties of sputtered NbN layers with a nominal thickness of 100 nm are studied by means of low-T/high-μ0H magnetotransport measurements. The doping of NbN is achieved via implantation of 35 keV Fe ions. In the as-grown NbN films, a local onset of superconductivity at Tloconset=15.72K is found, while the global superconducting ordering is achieved at Tglooffset=15.05K, with a normal state resistivity ρxx=22μΩ·cm. Moreover, upon Fe doping of NbN, ρxx=40μΩ·cm is estimated, while Tloconset and Tglooffset are measured to be 15.1 K and 13.5 K, respectively. In Fe:NbN, the intrinsic granularity leads to the emergence of a bosonic insulator state and the normal-metal-to-superconductor transition is accompanied by six different electronic phases characterized by a N-shaped T dependence of ρxx(T). The bosonic insulator state in a s-wave conventional superconductor doped with dilute magnetic impurities is predicted to represent a workbench for emergent phenomena, such as gapless superconductivity, triplet Cooper pairings and topological odd frequency superconductivity.

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39

Lin, Jianwei, Wanyu Lv, Yayun Gu, Kai Guo, Xinxin Yang, and Jingtai Zhao. "Intentional Carrier Doping to Realize n-Type Conduction in Zintl Phases Eu5−yLayIn2.2Sb6." Materials 12, no. 2 (January 15, 2019): 264. http://dx.doi.org/10.3390/ma12020264.

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Due to the tunable electrical transport properties and lower thermal conductivity, Zintl phase compounds have been considered as a promising candidate for thermoelectric applications. Most Sb-based Zintl compounds exhibit essentially p-type conduction as result of the cation vacancy. Herein, n-type Zintl phases Eu5−yLayIn2.2Sb6 has been successfully synthesized via controlling the vacancy defect combined with intentional electron doping. Excess of In would occupy the vacancy while La doping enables the electron to be the major carrier at the measured temperate range, realizing the n-type conduction for Eu5−yLayIn2.2Sb6 (y ≥ 0.04). Meanwhile, the thermal conductivity of Eu5−yLayIn2.2Sb6 reduces from 0.90 W/mK to 0.72 W/mK at 583 K derived from the La doping-induced disorder. The maximum thermoelectric figure of merit zT = 0.13 was obtained. This work firstly realizes the n-type conduction in Eu5In2Sb6, which sheds light on the strategy to synthesize n-type Zintl thermoelectric materials and promotes the practical applications of Zintl thermoelectric devices.

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40

Hu, Jiayuan, Wenxiang Jiang, Qi Lu, Chenhang Xu, Jiangtao Wu, Jinlong Jiao, Guohua Wang, Jie Ma, and Dong Qian. "Manipulating the magneto-resistance of Bi₂Se₃ thin films by strontium doping." Journal of Applied Physics 132, no. 9 (September 7, 2022): 095302. http://dx.doi.org/10.1063/5.0092075.

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We systematically studied the magneto-resistance of strontium (Sr) doped topological insulator (TI) Bi[Formula: see text]Se[Formula: see text] films. For Bi[Formula: see text]Se[Formula: see text] films with relatively large classic magneto-resistance, we found that slightly Sr doping can completely suppress the classic magneto-resistance and make the weak antilocalization effect dominate in the weak-magnetic-field region. Consequently, the value of the magneto-resistance is enhanced by more than 2.7 times at 0.2 T in slightly doped samples. In contrast, in the strong-magnetic-field region, the magneto-resistance is strongly reduced by doping but exhibits linear magneto-resistance behavior. Our results suggest that the linear magneto-resistance behavior originates from the mobility fluctuation induced by disorder described by the Parish–Littlewood model. Our findings not only gain insights into the doping effect on the topological insulator but also provide an effective way to manipulate the magneto-transport properties of TI for potential applications in future.

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41

Cui, Xiaoyan, Tingjing Hu, Jingshu Wang, Junkai Zhang, Xin Zhong, Yanli Chen, Xuefei Li, Jinghai Yang, and Chunxiao Gao. "Ionic Transportation and Dielectric Properties of YF3:Eu3+ Nanocrystals." Nanomaterials 8, no. 12 (December 1, 2018): 995. http://dx.doi.org/10.3390/nano8120995.

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The ionic transportation and dielectric properties of YF3:Eu3+ nanocrystals are investigated by AC impedance spectroscopy. The ion diffusion coefficient and conductivity increase along with the doping concentration and reach their highest values at 4% of Eu3+. The difference of ionic radius between Eu3+ and Y3+ leads to the structural disorder and lattice strain, which deduces the increase of the ion diffusion coefficient and conductivity before 4% Eu3+ doping; then the interaction of the neighboring doping ions is dominated, which results in the difficulty of ion migration and decreases of the ion diffusion coefficient and conductivity. The strong dispersion of the permittivity in the low frequency region indicates that the charge carrier transport mechanism is the ion hopping in the system. The low-frequency hopping dispersion is affected by an interfacial polarization, which exhibits a Maxwell-Wagner relaxation process, and its loss peak shifts to higher frequency with the ionic conductivity increasing.

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42

Parisini, Antonella, and Roberta Nipoti. "Carrier Transport Mechanisms in Ion Implanted and Highly-Doped p-Type 4H-SiC(Al)." Materials Science Forum 963 (July 2019): 318–23. http://dx.doi.org/10.4028/www.scientific.net/msf.963.318.

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Fundamental aspects of transport in Al ion implanted p-type 4H-SiC are briefly reviewed, in the light of recent literature. Particular attention is paid on (i) the Hall factor and (ii) the role of disorder in the onset of a variable range hopping mechanism (VRH) at high temperatures as doping level increases, up to a 2D-VRH induced by extended defects in the heaviest doped samples. The study allowed to understand the critical balance between implanted impurity density and annealing temperature that leads to the searched doping level, ensuring an efficient electrical activation of implanted impurities, on a side, and, on the other side, avoiding stacking faults that cause anisotropic hopping transport.

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43

Ślebarski, A., P. Zajdel, M. Fijałkowski, M. M. Maśka, P. Witas, J. Goraus, Y. Fang, D. C. Arnold, and M. B. Maple. "The effective increase in atomic scale disorder by doping and superconductivity in Ca3Rh4Sn13." New Journal of Physics 20, no. 10 (October 15, 2018): 103020. http://dx.doi.org/10.1088/1367-2630/aae4a8.

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44

Galanakis, I., K. Özdoğan, B. Aktaş, and E. Şaşıoğlu. "Effect of doping and disorder on the half metallicity of full Heusler alloys." Applied Physics Letters 89, no. 4 (July 24, 2006): 042502. http://dx.doi.org/10.1063/1.2235913.

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45

Dutton, S. E., C. L. Broholm, and R. J. Cava. "Divergent effects of static disorder and hole doping in geometrically frustrated β-CaCr2O4." Journal of Solid State Chemistry 183, no. 8 (August 2010): 1798–804. http://dx.doi.org/10.1016/j.jssc.2010.05.032.

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46

Thomas, Elayne M., Bhooshan C. Popere, Haiyu Fang, Michael L. Chabinyc, and Rachel A. Segalman. "Role of Disorder Induced by Doping on the Thermoelectric Properties of Semiconducting Polymers." Chemistry of Materials 30, no. 9 (April 23, 2018): 2965–72. http://dx.doi.org/10.1021/acs.chemmater.8b00394.

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47

Xing, Wen, Kazuaki Toyoura, and Truls Norby. "Effect of cation disorder on the solubility and result of doping in oxides." International Journal of Hydrogen Energy 37, no. 9 (May 2012): 8062–65. http://dx.doi.org/10.1016/j.ijhydene.2011.11.136.

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48

Yi, Xiao, and Luo Xiao-ming. "The Densities of Electronic States of Polyparaphenylene Upon Disorder Doping in Bipolaron Model." Communications in Theoretical Physics 14, no. 2 (September 1990): 225–26. http://dx.doi.org/10.1088/0253-6102/14/2/225.

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49

NISHIZAKI, TERUKAZU, TAKAHIKO SASAKI, NORIO KOBAYASHI, YOSHIHIKO TAKANO, MASANORI NAGAO, and HIROSHI KAWARADA. "SPATIAL VARIATION OF TUNNELING SPECTRA IN (111)-ORIENTED FILMS OF BORON-DOPED DIAMOND PROBED BY STM/STS." International Journal of Modern Physics B 27, no. 15 (June 4, 2013): 1362014. http://dx.doi.org/10.1142/s0217979213620142.

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We report on scanning tunneling microscopy/spectroscopy (STM/STS) experiments on boron-doped diamond films. The tunneling conductance dI/dV spectra measured on the (111)-oriented surface show spatial variations which distribute irrespective of the surface morphology. The spatial variations are discussed in terms of characteristic features of the superconductivity under the condition of the considerable disorder by the boron doping.

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50

Lim, Shao Qi, and James S. Williams. "Electrical and Optical Doping of Silicon by Pulsed-Laser Melting." Micro 2, no. 1 (December 24, 2021): 1–22. http://dx.doi.org/10.3390/micro2010001.

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Over four decades ago, pulsed-laser melting, or pulsed-laser annealing as it was termed at that time, was the subject of intense study as a potential advance in silicon device processing. In particular, it was found that nanosecond laser melting of the near-surface of silicon and subsequent liquid phase epitaxy could not only very effectively remove lattice disorder following ion implantation, but could achieve dopant electrical activities exceeding equilibrium solubility limits. However, when it was realised that solid phase annealing at longer time scales could achieve similar results, interest in pulsed-laser melting waned for over two decades as a processing method for silicon devices. With the emergence of flat panel displays in the 1990s, pulsed-laser melting was found to offer an attractive solution for large area crystallisation of amorphous silicon and dopant activation. This method gave improved thin film transistors used in the panel backplane to define the pixelation of displays. For this application, ultra-rapid pulsed laser melting remains the crystallisation method of choice since the heating is confined to the silicon thin film and the underlying glass or plastic substrates are protected from thermal degradation. This article will be organised chronologically, but treatment naturally divides into the two main topics: (1) an electrical doping research focus up until around 2000, and (2) optical doping as the research focus after that time. In the first part of this article, the early pulsed-laser annealing studies for electrical doping of silicon are reviewed, followed by the more recent use of pulsed-lasers for flat panel display fabrication. In terms of the second topic of this review, optical doping of silicon for efficient infrared light detection, this process requires deep level impurities to be introduced into the silicon lattice at high concentrations to form an intermediate band within the silicon bandgap. The chalcogen elements and then transition metals were investigated from the early 2000s since they can provide the required deep levels in silicon. However, their low solid solubilities necessitated ultra-rapid pulsed-laser melting to achieve supersaturation in silicon many orders of magnitude beyond the equilibrium solid solubility. Although infrared light absorption has been demonstrated using this approach, significant challenges were encountered in attempting to achieve efficient optical doping in such cases, or hyperdoping as it has been termed. Issues that limit this approach include: lateral and surface impurity segregation during solidification from the melt, leading to defective filaments throughout the doped layer; and poor efficiency of collection of photo-induced carriers necessary for the fabrication of photodetectors. The history and current status of optical hyperdoping of silicon with deep level impurities is reviewed in the second part of this article.

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