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Journal articles on the topic 'Dislocations in semiconductors'

Author: Grafiati

Published: 4 June 2021

Last updated: 2 February 2022

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1

Brinkman, W. F. "Electron Microscopy and the Electronics Industry: Partners in Development." Proceedings, annual meeting, Electron Microscopy Society of America 48, no. 1 (August 12, 1990): 12–13. http://dx.doi.org/10.1017/s0424820100178811.

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Since the invention of the transistor and the birth of the solid-state electronics industry, electron microscopy has been an integral part of the boom in the science and technology of semiconductors. The relationship has been symbiotic: the technique of microscopy has probably gained almost as much as the electronics industry from innovations. Historically, semiconductor research has always come down to a question of the growth of perfect materials with perfect interfaces, and microscopic analysis below the optical level has been essential to improvements. When applications for the semiconductors germanium and silicon were discovered in solid-state devices, its became necessary to grow high-quality single crystals free of defects. A lot of work at Bell Labs and other institutions was directed at understanding the behavior of dislocations in crystals. Bill Schockley, a co-inventor of the transistor, is well-known for his contributions to dislocation theory, particularly dislocation dissociation in semiconductors. Bob Heidenreich, from Bell Labs, contributed much to the early stages of microscopy of defects and dislocations. The need for dislocation-free material generated extensive efforts around the world which led to the growth of high-purity single-crystal silicon in the 1960’s. Silicon is now the highest quality and purest material available, and also the cheapest in single-crystal form.

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2

Morrison, S. Roy. "1/f Noise from levels in a linear or planar array: Dislocations in metals." Canadian Journal of Physics 71, no. 3-4 (March 1, 1993): 147–51. http://dx.doi.org/10.1139/p93-022.

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This report compares the double-layer noise expected for metal dislocations with the earlier analysis of semiconductor dislocations. In both cases we describe the asymmetric trapping of charge over an electrical double layer at the dislocation. The earlier reports describe how a 1/f spectrum should be observed, in the form of a truncated Lorentzian, if the double-layer voltage shows fluctuations greater than kT/q. This report describes the origin of a double layer at metal dislocations that fulfills the requirements. It shows why, despite the substantial difference in parameters, the noise predicted for metals is of the same magnitude (in terms of the Hooge parameter) as that predicted for semiconductors.

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3

Yonenaga, Ichiro, Koji Sumino, Gunzo Izawa, Hisao Watanabe, and Junji Matsui. "Mechanical property and dislocation dynamics of GaAsP alloy semiconductor." Journal of Materials Research 4, no. 2 (April 1989): 361–65. http://dx.doi.org/10.1557/jmr.1989.0361.

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The mechanical behavior of GaAsP alloy semiconductor was investigated by means of compressive deformation and compared with those of GaAs and GaP. The nature of collective motion of dislocations during deformation was determined by strain-rate cycling tests. The dynamic characteristics of dislocations in GaAsP were found to be similar to those in elemental and compound semiconductors such as Si, Ge, GaAs, and GaP. An alloy semiconductor has a component of the flow stress that is temperature-insensitive and is absent in compound semiconductors.

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4

Hirsch, P. B. "Dislocations in semiconductors." Materials Science and Technology 1, no. 9 (September 1985): 666–77. http://dx.doi.org/10.1179/mst.1985.1.9.666.

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5

Lu, P., R. W. Glaisher, and David J. Smith. "Atomic structure of CdTe dislocations studied by HREM." Proceedings, annual meeting, Electron Microscopy Society of America 47 (August 6, 1989): 576–77. http://dx.doi.org/10.1017/s0424820100154858.

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The determination of the atomic core of dislocations in semiconductors is a challenging problem for high-resolution electron microscopy(HREM). In previous studies, various defects in elemental semiconductors, III-V and II-VI compound semiconductors have been reported. In particular, the core structure of the 30° partial dislocations in silicon, which are dissociated from a perfect 60° dislocation, have been deduced. present study, various CdTe dislocations have been imaged at 400keV. and their core structures have been analyzed with assistance from multi-slice image simulations. Sections of CdTe single crystal were cut normal to the [110] direction, followed by mechanically polishing to a thickness of ˜ 20 microns and finally argon ion-beam milling to perforation for electron microscopy. The crystals were examined with a JEM-4000EX. having a structure resolution limit of ˜ 1.7Å at 400keV.

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6

Garkavenko, A. S., V. A. Mokritsky, O. V. Maslov, and A. V. Sokolov. "Nature of Degradation in Semiconductor Lasers with Electronic Energy Pumping. Theoretical Background." Science & Technique 19, no. 4 (August 5, 2020): 311–19. http://dx.doi.org/10.21122/2227-1031-2020-19-4-311-319.

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. Catastrophic degradation takes place in case of reaching critical values of laser radiation density power in semiconductor lasers with electronically pumped energy made from single crystals of some compounds. It has been accompanied by mechanical destruction of the surface at resonator ends, an irreversible decrease in radiation power and an increase in generation threshold. Moreover, during the catastrophic degradation of semiconductor lasers under the action of intrinsic radiation, significant changes in the crystal structure occur within the single crystal: dislocation density reaches a value more 1012–1015 cm–2. It has been shown that initial density of dislocations and critical power density of the intrinsic radiation are inversely proportional. Thus, the degradation process of semiconductor lasers is directly related to generation and multiplication of dislocations during laser operation. Mechanical destruction of a crystal lattice occurs at critical values of laser radiation power and dislocation density. To clarify the proposed mechanism for the degradation of semiconductor lasers, it is necessary to take into account an effect of dislocations on optical properties of semiconductors. Typically, this effect is considered as follows: dislocations cause an appearance of a local deformation field and, in addition, form space-charge regions that surround a dislocation core in the form of a charged tube. The paper proposes a model of the phenomenon under study: large stresses arise in the dislocation core, leading to a displacement of individual atoms and deformation of the crystal lattice. Lattice deformation in the dislocation core leads to a local change in the width of a forbidden band. This change value is about 10–2 eV for a screw dislocation and 10–1 eV for a boundary dislocation. The mechanism of this change is that aforementioned deformation leads to a multiple rupture of electronic bonds and an increase in the electron concentration in the dislocation core to approximately value 1018 cm–3. The developed analytical model of the degradation mechanism allows to perform selection of a semiconductor and estimation of a laser operating mode under conditions of increased radiation power.

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7

Shikin, V. B., and N. I. Shikina. "Charged dislocations in semiconductors." Physica Status Solidi (a) 108, no. 2 (August 16, 1988): 669–81. http://dx.doi.org/10.1002/pssa.2211080224.

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8

Smith, P., and J. Narayan. "Dislocation and solid-phase epitaxial growth microstructure control by Ar+ implantation for gettering in semiconductors." Proceedings, annual meeting, Electron Microscopy Society of America 44 (August 1986): 728–29. http://dx.doi.org/10.1017/s0424820100145017.

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Gettering of undesirable impurities from the junctions or the electrically active regions improves electrical characteristics of semiconductor devices. This removal of impurities can be accomplished either by point defects or more efficiently by line defects such as dislocations and small-angle grain boundaries. The small-angle grain boundaries containing arrays of dislocations constitute two-dimensional defects which are more effective in removing the impurities. This removal of undesirable impurities involves dislocation - impurity interaction and subsequent segregation of impurities at the dislocations. The gettering efficiency of dislocations is determined by the nature of dislocations and also by the stability of dislocation network against annealing. In previous studies, it has been shown Ar+ implantation damage is very effective in gettering undesireable impurities. However, the mechanisms of enhanced gettering by Ar+ ion damage were not clear. The purpose of this investigation was to explore the mechanism of enhanced gettering by Ar+ damage and charaterize the Ar+ damage as a function of annealing treatments.

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9

Zhang, Huili, Chun Zhang, Chunhua Zeng, and Lumei Tong. "The Properties of Shuffle Screw Dislocations in Semiconductors Silicon and Germanium." Open Materials Science Journal 9, no. 1 (May 29, 2015): 10–13. http://dx.doi.org/10.2174/1874088x01509010010.

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The dislocation widths, Peierls barriers and Peierls stresses for shuffle screw dislocations in diamond structure crystals, Si and Ge, have been calculated by the improved P-N theory. The widths are about 0.6b, where b is the Burgers vector. The Peierls barrier for shuffle screw dislocation in Si and Ge, is about 3.61~4.61meV/Å and 5.31~13.32meV/Å, respectively. The Peierls stress is about 0.28~0.33GPa and 0.31~0.53GPa, respectively. The calculated Peierls barriers and stresses are likely the results of shuffle screw dislocation with metastable core which is centered on the bond between two atoms.

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10

George, A., and J. Rabier. "Dislocations and plasticity in semiconductors. I — Dislocation structures and dynamics." Revue de Physique Appliquée 22, no. 9 (1987): 941–66. http://dx.doi.org/10.1051/rphysap:01987002209094100.

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11

Myhajlenko, S., H. J. Hutchinson, and J. W. Steeds. "TEM recombination studies of dislocations in indium phosphide." Proceedings, annual meeting, Electron Microscopy Society of America 44 (August 1986): 814–15. http://dx.doi.org/10.1017/s0424820100145418.

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We have reported the use of transmission electron microscopy (TEM) with simultaneous cathodoluminescence (CL) for the study of defects in opto-electronic semiconductors such as InP and ZnSe. The effect of individual dislocations on the efficiency of the near band edge luminescence was investigated; the main observation reported for InP was the quenching at some dislocations of the exciton-related emission. No correlation was found between dislocation type and luminescence behaviour. Further, during the course of this work, a better appreciation has been gained of factors which are important in transmission CL studies, for example, the effects of excitation, strain, surface recombination, electric fields and optical interference. We describe some of them here and new results from dislocation groups in InP.

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12

Babentsov, V. N., V. A. Boyko, A. F. Kolomys, G. A. Shepelski, V. V. Strelchuk, and N. I. Tarbaev. "The Nanometer Scaled Defects Induces with the Dislocation Motion in II-VI Insulated Semiconductors." Advanced Materials Research 276 (July 2011): 195–202. http://dx.doi.org/10.4028/www.scientific.net/amr.276.195.

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Dislocation-related defects induced by dislocation motion in p-CdTe were studied. Generation of “fresh” dislocations from the indented point of the CdTe (100), (110), and (111) surfaces at room temperatures was visualized by the chemical etching and low temperature photoluminescence in a mapping regime. The crystallographic orientation of the dislocation rosettes of macroscopic plastic deformation lines was analyzed on the (100), (110), and (111) surfaces.

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13

Bakke, K., and F. Moraes. "A geometric approach to dislocation densities in semiconductors." Modern Physics Letters B 28, no. 15 (June 17, 2014): 1450124. http://dx.doi.org/10.1142/s0217984914501243.

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Dislocation densities threading semiconductor crystals are a problem for device developers. Among the issues presented by the defect density is the appearance of the so-called shallow levels. In this work, we introduce a geometric model to explain the origin of the observed shallow levels. We show that a uniform distribution of screw dislocations acts as an effective uniform magnetic field which yields electronic bound states even in the presence of a repulsive Coulomb-like potential. This introduces energy levels within the band gap, increasing the carrier concentration in the region threaded by the dislocation density and adding additional recombination paths other than the near band-edge recombination. Our results suggest that one might use a magnetic field to destroy the dislocation density bound states and therefore minimize its effects on the charge carriers.

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14

Erofeev, Vladimir I., Anna V. Leonteva, Alexey O. Malkhanov, and Ashot V. Shekoyan. "Localized nonlinear waves in a semiconductor with charged dislocations." EPJ Web of Conferences 250 (2021): 03012. http://dx.doi.org/10.1051/epjconf/202125003012.

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To describe a nonlinear ultrasonic wave in a semiconductor with charged dislocations, an evolution equation is obtained that generalizes the well-known equations of wave dynamics: Burgers and Korteweg de Vries. By the method of truncated decompositions, an exact analytical solution of the evolution equation with a kink profile has been found. The kind of kink (increasing, decreasing) and its polarity depend on the values of the parameters and their signs. An ultrasonic wave in a semiconductor containing numerous charged dislocations is considered. It is assumed that there is a constant electric field that creates an electric current. The situation is similar to the case of the propagation of ultrasonic waves in piezoelectric semiconductors, but in the problem under consideration, instead of the electric field due to the piezoelectric properties of the medium, the electric field of dislocations appears.

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15

Kteyan, A. A., A. S. Musayelyan, and R. A. Vardanyan. "Auger recombination involving dislocations in semiconductors." Journal of Physics: Condensed Matter 15, no. 49 (November 25, 2003): 8445–53. http://dx.doi.org/10.1088/0953-8984/15/49/020.

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16

Sumino, K. "Impurity Reaction with Dislocations in Semiconductors." physica status solidi (a) 171, no. 1 (January 1999): 111–22. http://dx.doi.org/10.1002/(sici)1521-396x(199901)171:1<111::aid-pssa111>3.0.co;2-t.

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17

Marée, P. M. J., J. C. Barbour, J. F. van der Veen, K. L. Kavanagh, C. W. T. Bulle‐Lieuwma, and M. P. A. Viegers. "Generation of misfit dislocations in semiconductors." Journal of Applied Physics 62, no. 11 (December 1987): 4413–20. http://dx.doi.org/10.1063/1.339078.

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18

Inoki, C. K., D. L. Harris, T. S. Kuan, S. S. Yi, D. M. Hansen, and T. F. Kuech. "Lateral Epitaxial Overgrowth of GaSb on GaAs and GaSb Substrates." Microscopy and Microanalysis 6, S2 (August 2000): 1098–99. http://dx.doi.org/10.1017/s1431927600037983.

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Lateral epitaxial overgrowth (LEO) technique has recently been used to improve the quality of semiconductor layers grown on a substrate. Previous studies with GaN grown on sapphire showed a significant reduction in dislocation density in LEO layers. The LEO technique uses a thin mask layer to achieve selective epitaxy, allowing vertical and lateral growth through patterned windows. Reduced defect density is expected in laterally grown materials, since no lattice mismatch is involved. In practice, however, the thermal and mismatch stresses often cause dislocations to propagate laterally during LEO, and excessive dislocation activities induced by the stresses also tilt the LEO regions. GaSb-based semiconductors, which are of interest for infrared optoelectronic device applications, have much larger (∼8%) lattice constants than the commonly used GaAs substrate. The LEO technique is therefore of particular interest for its potential to significantly reduce the defect density in GaSb films grown on GaAs substrates.

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19

Eberlein, T. A. G., R. Jones, and A. T. Blumenau. "Theory of Dislocations in SiC: The Effect of Charge on Kink Migration." Materials Science Forum 527-529 (October 2006): 321–26. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.321.

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Under forward bias bipolar 4H- and 6H-SiC devices are known to degrade rapidly through stacking fault formation and expansion in the basal plane. It is believed that the ob- served rapid stacking fault growth is due to a recombination-enhanced dislocation glide (REDG) mechanism at the bordering partial dislocations. This degradation phenomenon has generated considerable interest in the involved dislocations — in particular in their atomic and electronic structure, but also in the mechanisms of their glide motion. Fortunately, nowadays advances in computing power and in theoretical methodology allow the ab initio based modelling of some aspects of the problem. This paper therefore gives a brief review of recent activities in this field, and further discusses some general problems of ab initio based modelling of dislocations in compound semiconductors.

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20

Петухов, Б. В. "Механизм обусловленного динамической примесной подсистемой аномального поведения пластического течения материалов с высоким кристаллическим рельефом." Физика твердого тела 63, no. 12 (2021): 2126. http://dx.doi.org/10.21883/ftt.2021.12.51674.157.

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A model of dynamic interaction of dislocations with an impurity subsystem of crystals with a high potential relief of the crystal lattice (Peierls barriers) is developed. Such materials include metals with body-centered cubic structure, semiconductors, ceramics, and many others. It is shown that the modification of impurity migration barriers near the dislocation core significantly affects the segregation of impurities on the moving dislocation. The presence of a substantially nonequilibrium initial stage of segregation kinetics leading to anomalies of dislocation dynamics and yield strength of materials is substantiated.

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21

Gestrin, S. G. "Localization of plasma oscillations near charged dislocations and dislocation walls in semiconductors." Russian Physics Journal 41, no. 2 (February 1998): 174–77. http://dx.doi.org/10.1007/bf02766565.

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22

Justo, João F. "Dislocations in Semiconductors: Core Structure and Mobility." Defect and Diffusion Forum 200-202 (November 2001): 97–106. http://dx.doi.org/10.4028/www.scientific.net/ddf.200-202.97.

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23

Jones, R. "Do we really understand dislocations in semiconductors?" Materials Science and Engineering: B 71, no. 1-3 (February 2000): 24–29. http://dx.doi.org/10.1016/s0921-5107(99)00344-x.

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24

Erofeeva, S. A. "On the mobility of dislocations in semiconductors." Philosophical Magazine A 70, no. 6 (December 1994): 943–50. http://dx.doi.org/10.1080/01418619408242941.

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25

Jones, R., A. Umerski, P. Sitch, M. I. Heggie, and S. Öberg. "First-Principles Calculations of Dislocations in Semiconductors." Physica Status Solidi (a) 137, no. 2 (June 16, 1993): 389–99. http://dx.doi.org/10.1002/pssa.2211370211.

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26

Justo, João F., and Lucy V. C. Assali. "Reconstruction defects on partial dislocations in semiconductors." Applied Physics Letters 79, no. 22 (November 26, 2001): 3630–32. http://dx.doi.org/10.1063/1.1421623.

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27

Petit, S., A. Béré, J. Chen, I. Belabbas, P. Ruterana, and G. Nouet. "Atomic structure of dislocations in nitride semiconductors." physica status solidi (c) 3, no. 6 (June 2006): 1771–74. http://dx.doi.org/10.1002/pssc.200565274.

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28

Steeds, J. W. "Luminescence from individual dislocations in II-VI and III-V semiconductors." Proceedings, annual meeting, Electron Microscopy Society of America 49 (August 1991): 834–35. http://dx.doi.org/10.1017/s0424820100088488.

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There is a wide range of experimental results related to dislocations in diamond, group IV, II-VI, III-V semiconducting compounds, but few of these come from isolated, well-characterized individual dislocations. We are here concerned with only those results obtained in a transmission electron microscope so that the dislocations responsible were individually imaged. The luminescence properties of the dislocations were studied by cathodoluminescence performed at low temperatures (~30K) achieved by liquid helium cooling. Both spectra and monochromatic cathodoluminescence images have been obtained, in some cases as a function of temperature.There are two aspects of this work. One is mainly of technological significance. By understanding the luminescence properties of dislocations in epitaxial structures, future non-destructive evaluation will be enhanced. The second aim is to arrive at a good detailed understanding of the basic physics associated with carrier recombination near dislocations as revealed by local luminescence properties.

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29

Vanderschaeve, G., and D. Caillard. "Dissociation of dislocations and the mobility of partial dislocations in elemental semiconductors." physica status solidi (a) 202, no. 5 (April 2005): 939–43. http://dx.doi.org/10.1002/pssa.200460540.

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30

Pichaud, Bernard, N. Burle, Michael Texier, C. Fontaine, and V. I. Vdovin. "Dislocation Nucleation in Heteroepitaxial Semiconducting Films." Solid State Phenomena 156-158 (October 2009): 251–59. http://dx.doi.org/10.4028/www.scientific.net/ssp.156-158.251.

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The nucleation of dislocation in semiconductors is still a matter of debate and especially in heteroepitaxial films. To understand this nucleation process the classical models of dislocation nucleation are presented and discussed. Two main points are then developed: emission of dislocations from surface steps and the role of point defects agglomeration on dislocation nucleation. Recent atomic simulation of half loops emission from surface steps and experimental evidences of anisotropic relaxation of GaInAs films deposited on vicinal (111) GaAs substrates strongly support surface steps as preferential sites for nucleation. In low temperature buffer layer structures (SiGe/Si) an original dislocation structure is observed which corresponds to the dislocation emission in different glide systems by a unique nucleation centre.

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31

Liu, J., and J. M. Cowley. "Imaging dislocations with an annular dark-field detector." Proceedings, annual meeting, Electron Microscopy Society of America 50, no. 2 (August 1992): 1224–25. http://dx.doi.org/10.1017/s0424820100130754.

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High-angle annular dark-field (HAADF) scanning transmission electron microscopy (STEM) has been recently the subject of active research because of its successful applications to the characterization of supported catalysts, interface problems in MBE grown semiconductors, superconductors and X-ray multilayers. The characteristics of HAADF images are different from those of the TEM images. For perfect single crystals the HAADF signal is mainly generated from thermal diffuse scattering. HAADF technique has also been used to study dopant contrast effects in semiconductors and dislocations have also been observed with an ADF detector. In this paper we report a study of dislocation contrasts and their dependence on the inner collection angle of the ADF detector.The STEM instrument used for the observations was the HB5 from VG Microscopes, Ld., modified by the addition of an ultra-high resolution pole piece (Cs = 0.8 mm) and a two-dimensional detector system. Post specimen lenses and various beam stops were used to change the inner (α) and outer (β) collection angles of the ADF detector.

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32

De Cooman, B. C., and C. B. Carter. "Glide of extended dislocation in III-V compounds." Proceedings, annual meeting, Electron Microscopy Society of America 45 (August 1987): 308–11. http://dx.doi.org/10.1017/s0424820100126366.

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The study of dislocation dynamics has until recently been restricted to relatively high temperatures and low stresses due to the the brittle nature of most semiconductors. Although much is already known for this deformation regime, there is little information from controlled deformation at the low temperatures (i.e., T< 0.5Tm) and high stresses (τ≫ 10 MPa). Deformation of III-V compounds under such conditions has shown the following characteristics:a. High-stress deformation experiments give rise to well-defined dislocation configurations, which makes the study of doping effects on dislocation mobility directly visible. In addition, individual partial dislocations can be observed using weak-beam microscopy.

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33

Masuda-Jindo, Kinichi. "Theoretical Study on the Electronic States of Dislocations and Dislocation Motion in Semiconductors." Materials Science Forum 143-147 (October 1993): 1293–98. http://dx.doi.org/10.4028/www.scientific.net/msf.143-147.1293.

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34

Razumova, M. A., and V. N. Khotyaintsev. "Polarization of dislocation absorption and luminescence in direct gap semiconductors with edge dislocations." physica status solidi (b) 174, no. 1 (November 1, 1992): 165–74. http://dx.doi.org/10.1002/pssb.2221740116.

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35

Geipel, T., and P. Pirouz. "Characterization of the dislocation core structure of partial dislocations in SiC(011) using HRTEM: a theoretical study." Proceedings, annual meeting, Electron Microscopy Society of America 51 (August 1, 1993): 992–93. http://dx.doi.org/10.1017/s0424820100150794.

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The mobility of a dislocation in compound semiconductors of zincblende or wurtzite structure depends on its core structure i.e. its chemical composition. Present analytical techniques are not able to resolve the nature of the atomic species at the dislocation core and although HRTEM is capable of resolving the atomic arrangement in the core, its chemical characterization is difficult. In single crystalline regions the chemical composition can be determined using chemical mapping but this method cannot be applied to dislocations, viewed end-on, because these are non-periodic features. In a HRTEM image of a compound material, different scattering factors of the constituent elements may lead to spots of different brightness, but these contrast differences are very small. The only distinct characteristic of a HRTEM image is the spacings between bright or dark spots which can be measured easily. In this paper a practical concept for chemical distinction between Si and C in the cores of partial dislocations in SiC(011) is presented.

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36

Pagava, Teimuraz, Levan Chkhartishvili, Manana Beridze, Magda Metskhvarishvili, Iamze Kalandadze, Darejan Khocholava, Nona Esiava, Maia Kevkhishvili, and Marine Matcharashvili. "SPECIAL MECHANISM OF CONDUCTION TYPE INVERSION IN PLASTICALLY DEFORMED n-Si." EUREKA: Physics and Engineering 4 (July 31, 2019): 76–81. http://dx.doi.org/10.21303/2461-4262.2019.00938.

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The aim of research is studying the mechanism of n–p inversion of the conduction type of deformed silicon crystals in the course of their thermal treatment. Initially, almost non-dislocation zone-melted phosphorus-doped n-Si single crystals with electron concentration of 2×1014 cm–3 were studied. Uniaxial compression at temperature of 700 °С and pressure of 25 MPa increased the dislocation density to 108 cm–2. After long (within 30 min) cooling of the deformed crystals to room temperature, an n–p inversion of the conduction type occurred. The effect is explained by the formation of phosphorus–divacancy complexes PV2 in the defective atmosphere of dislocations, which are acceptor centers with energy level of Ev+0.34 eV. The found out n–p inversion mechanism differs from the standard one for plastically deformed n-type semiconductors with a diamond-like crystalline structure, which consists in the formation of acceptor centers along edge dislocations.

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37

Kveder, Vitaly V. "Dislocations in Semiconductors as One Dimensional Electronic Systems." Defect and Diffusion Forum 103-105 (January 1993): 461–72. http://dx.doi.org/10.4028/www.scientific.net/ddf.103-105.461.

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38

Justo, Joa~ao F., and Lucy V. C. Assali. "Electrically active centers in partial dislocations in semiconductors." Physica B: Condensed Matter 308-310 (December 2001): 489–92. http://dx.doi.org/10.1016/s0921-4526(01)00819-5.

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39

Rabier, Jacques, Jean-Luc Demenet, Marie-Françoise Denanot, and Xavier Milhet. "On the core structures of dislocations in semiconductors." Materials Science and Engineering: A 400-401 (July 2005): 97–100. http://dx.doi.org/10.1016/j.msea.2005.03.080.

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40

Iunin, Yu L., and V. I. Nikitenko. "Modes of kink motion on dislocations in semiconductors." Scripta Materialia 45, no. 11 (November 2001): 1239–46. http://dx.doi.org/10.1016/s1359-6462(01)01156-3.

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41

Bansal, Bhavtosh, Rituparna Ghosh, and V. Venkataraman. "Scattering of carriers by charged dislocations in semiconductors." Journal of Applied Physics 113, no. 16 (April 28, 2013): 163705. http://dx.doi.org/10.1063/1.4803121.

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42

Figielski, T., T. Wosi?ski, and A. M?kosa. "Mesoscopic Conductance Oscillations Associated with Dislocations in Semiconductors." physica status solidi (b) 222, no. 1 (November 2000): 151–58. http://dx.doi.org/10.1002/1521-3951(200011)222:1<151::aid-pssb151>3.0.co;2-d.

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43

Yonenaga, Ichiro, and Koji Sumino. "Mechanical properties and dislocation dynamics of GaP." Journal of Materials Research 4, no. 2 (April 1989): 355–60. http://dx.doi.org/10.1557/jmr.1989.0355.

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Mechanical properties of GaP crystals are investigated in the temperature range 600–900 °C by means of compression tests. Stress-strain characteristics of a GaP crystal in the temperature range 600–800 °C are very similar to those of a GaAs crystal in the temperature range 450–600 °C. The dynamic state of dislocations during deformation is determined by means of the strain-rate cycling technique. The deformation of GaP is found to be controlled by the dislocation processes the same as those in other kinds of semiconductors such as Si, Ge, and GaAs. The velocity v of dislocations that control deformation is deduced to be v = v0 τ exp(–2.2 eV/kT) as a function of the stress τ and the temperature T, where v0 is a constant and k the Boltzmann constant. The Portevin-LeChatelier effect is observed in the stress-strain behavior in the deformation at high temperatures and under low strain rates, which may be attributed to the locking of dislocations by impurities or impurity-defect complexes.

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44

Batstone, J. L. "Structural and electronic properties of defects in semiconductors." Proceedings, annual meeting, Electron Microscopy Society of America 53 (August 13, 1995): 4–5. http://dx.doi.org/10.1017/s0424820100136398.

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The development of growth techniques such as metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy during the last fifteen years has resulted in the growth of high quality epitaxial semiconductor thin films for the semiconductor device industry. The III-V and II-VI semiconductors exhibit a wide range of fundamental band gap energies, enabling the fabrication of sophisticated optoelectronic devices such as lasers and electroluminescent displays. However, the radiative efficiency of such devices is strongly affected by the presence of optically and electrically active defects within the epitaxial layer; thus an understanding of factors influencing the defect densities is required.Extended defects such as dislocations, twins, stacking faults and grain boundaries can occur during epitaxial growth to relieve the misfit strain that builds up. Such defects can nucleate either at surfaces or thin film/substrate interfaces and the growth and nucleation events can be determined by in situ transmission electron microscopy (TEM).

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45

Rabier, J., and A. George. "Dislocations and plasticity in semiconductors. II. The relation between dislocation dynamics and plastic deformation." Revue de Physique Appliquée 22, no. 11 (1987): 1327–51. http://dx.doi.org/10.1051/rphysap:0198700220110132700.

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46

Suarez-Martinez, I., G. Savini, and M. I. Heggie. "First Principles Modelling of Scroll-to-Nanotube Defect: Screw-Type Dislocation." Materials Science Forum 527-529 (October 2006): 1583–86. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1583.

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Carbon nanotubes present interesting potential applications especially in nanoelectronics. Their electrical properties are known to be a function of their chirality. It happens that 1/3 of CNs are metallic and 2/3 are semiconductors. Narrow nanotubes are expected to be wide-band gap semiconductors. Several experimental results have shown that the thickness of a multi-wall nanotube along the axis can change, while the interlayer spacing remains fairly constant. These observations suggest the coexistence in the same tube of a scroll structure and a multi-wall nested tube. We explain this defect as a screw dislocation which by gliding transforms between these two forms. In this paper, we present a density functional theory study of the structure and energetics of screw dislocations in AA and ABC graphite, and we discuss their role in the scroll-to-nanotube transformation in multi-wall nanotubes.

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47

Wheeler, J. M., L. Thilly, Y. Zou, A. Morel, R. Raghavan, and J. Michler. "The effect of dislocation nature on the size effect in Indium Antimonide above and below the brittle-ductile transition." MRS Advances 5, no. 33-34 (October 7, 2019): 1811–18. http://dx.doi.org/10.1557/adv.2019.369.

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The effect of length scale on mechanical strength is a significant consideration for semiconductor materials. In III-V semiconductors, such as InSb, a transition from partial to perfect dislocations occurs at the brittle-to-ductile transition temperature (~150 °C for InSb). High temperature micro-compression reveals InSb to show a small size effect below the transition, similar to ceramics, while in the ductile regime it shows a size effect consistent with fcc metals. The source truncation model is found to agree with the observed trends in strength with size once the change in Burgers vector and bulk strength are taken into account.

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Maruszewski, B. "Effects of Dislocations on the Dynamics of Elastic Semiconductors." Materials Science Forum 123-125 (January 1993): 599–608. http://dx.doi.org/10.4028/www.scientific.net/msf.123-125.599.

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Zhou, Xiaocheng, Zhuhua Zhang, and Wanlin Guo. "Dislocations as Single Photon Sources in Two-Dimensional Semiconductors." Nano Letters 20, no. 6 (May 26, 2020): 4136–43. http://dx.doi.org/10.1021/acs.nanolett.9b05305.

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Petukhov, B. V. "Threshold stresses for motion of dislocations in extrinsic semiconductors." Semiconductors 41, no. 6 (June 2007): 625–30. http://dx.doi.org/10.1134/s1063782607060024.

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