Relevant bibliographies by topics / Dislocations in semiconductors

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Dislocations in semiconductors'

Author: Grafiati
Published: 4 June 2021
Last updated: 2 February 2022

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Journal articles on the topic "Dislocations in semiconductors"

1

Brinkman, W. F. "Electron Microscopy and the Electronics Industry: Partners in Development." Proceedings, annual meeting, Electron Microscopy Society of America 48, no. 1 (August 12, 1990): 12–13. http://dx.doi.org/10.1017/s0424820100178811.

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Since the invention of the transistor and the birth of the solid-state electronics industry, electron microscopy has been an integral part of the boom in the science and technology of semiconductors. The relationship has been symbiotic: the technique of microscopy has probably gained almost as much as the electronics industry from innovations. Historically, semiconductor research has always come down to a question of the growth of perfect materials with perfect interfaces, and microscopic analysis below the optical level has been essential to improvements. When applications for the semiconductors germanium and silicon were discovered in solid-state devices, its became necessary to grow high-quality single crystals free of defects. A lot of work at Bell Labs and other institutions was directed at understanding the behavior of dislocations in crystals. Bill Schockley, a co-inventor of the transistor, is well-known for his contributions to dislocation theory, particularly dislocation dissociation in semiconductors. Bob Heidenreich, from Bell Labs, contributed much to the early stages of microscopy of defects and dislocations. The need for dislocation-free material generated extensive efforts around the world which led to the growth of high-purity single-crystal silicon in the 1960’s. Silicon is now the highest quality and purest material available, and also the cheapest in single-crystal form.
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Morrison, S. Roy. "1/f Noise from levels in a linear or planar array: Dislocations in metals." Canadian Journal of Physics 71, no. 3-4 (March 1, 1993): 147–51. http://dx.doi.org/10.1139/p93-022.

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This report compares the double-layer noise expected for metal dislocations with the earlier analysis of semiconductor dislocations. In both cases we describe the asymmetric trapping of charge over an electrical double layer at the dislocation. The earlier reports describe how a 1/f spectrum should be observed, in the form of a truncated Lorentzian, if the double-layer voltage shows fluctuations greater than kT/q. This report describes the origin of a double layer at metal dislocations that fulfills the requirements. It shows why, despite the substantial difference in parameters, the noise predicted for metals is of the same magnitude (in terms of the Hooge parameter) as that predicted for semiconductors.
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Yonenaga, Ichiro, Koji Sumino, Gunzo Izawa, Hisao Watanabe, and Junji Matsui. "Mechanical property and dislocation dynamics of GaAsP alloy semiconductor." Journal of Materials Research 4, no. 2 (April 1989): 361–65. http://dx.doi.org/10.1557/jmr.1989.0361.

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The mechanical behavior of GaAsP alloy semiconductor was investigated by means of compressive deformation and compared with those of GaAs and GaP. The nature of collective motion of dislocations during deformation was determined by strain-rate cycling tests. The dynamic characteristics of dislocations in GaAsP were found to be similar to those in elemental and compound semiconductors such as Si, Ge, GaAs, and GaP. An alloy semiconductor has a component of the flow stress that is temperature-insensitive and is absent in compound semiconductors.
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Hirsch, P. B. "Dislocations in semiconductors." Materials Science and Technology 1, no. 9 (September 1985): 666–77. http://dx.doi.org/10.1179/mst.1985.1.9.666.

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Lu, P., R. W. Glaisher, and David J. Smith. "Atomic structure of CdTe dislocations studied by HREM." Proceedings, annual meeting, Electron Microscopy Society of America 47 (August 6, 1989): 576–77. http://dx.doi.org/10.1017/s0424820100154858.

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The determination of the atomic core of dislocations in semiconductors is a challenging problem for high-resolution electron microscopy(HREM). In previous studies, various defects in elemental semiconductors, III-V and II-VI compound semiconductors have been reported. In particular, the core structure of the 30° partial dislocations in silicon, which are dissociated from a perfect 60° dislocation, have been deduced. present study, various CdTe dislocations have been imaged at 400keV. and their core structures have been analyzed with assistance from multi-slice image simulations. Sections of CdTe single crystal were cut normal to the [110] direction, followed by mechanically polishing to a thickness of ˜ 20 microns and finally argon ion-beam milling to perforation for electron microscopy. The crystals were examined with a JEM-4000EX. having a structure resolution limit of ˜ 1.7Å at 400keV.
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Garkavenko, A. S., V. A. Mokritsky, O. V. Maslov, and A. V. Sokolov. "Nature of Degradation in Semiconductor Lasers with Electronic Energy Pumping. Theoretical Background." Science & Technique 19, no. 4 (August 5, 2020): 311–19. http://dx.doi.org/10.21122/2227-1031-2020-19-4-311-319.

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. Catastrophic degradation takes place in case of reaching critical values of laser radiation density power in semiconductor lasers with electronically pumped energy made from single crystals of some compounds. It has been accompanied by mechanical destruction of the surface at resonator ends, an irreversible decrease in radiation power and an increase in generation threshold. Moreover, during the catastrophic degradation of semiconductor lasers under the action of intrinsic radiation, significant changes in the crystal structure occur within the single crystal: dislocation density reaches a value more 1012–1015 cm–2. It has been shown that initial density of dislocations and critical power density of the intrinsic radiation are inversely proportional. Thus, the degradation process of semiconductor lasers is directly related to generation and multiplication of dislocations during laser operation. Mechanical destruction of a crystal lattice occurs at critical values of laser radiation power and dislocation density. To clarify the proposed mechanism for the degradation of semiconductor lasers, it is necessary to take into account an effect of dislocations on optical properties of semiconductors. Typically, this effect is considered as follows: dislocations cause an appearance of a local deformation field and, in addition, form space-charge regions that surround a dislocation core in the form of a charged tube. The paper proposes a model of the phenomenon under study: large stresses arise in the dislocation core, leading to a displacement of individual atoms and deformation of the crystal lattice. Lattice deformation in the dislocation core leads to a local change in the width of a forbidden band. This change value is about 10–2 eV for a screw dislocation and 10–1 eV for a boundary dislocation. The mechanism of this change is that aforementioned deformation leads to a multiple rupture of electronic bonds and an increase in the electron concentration in the dislocation core to approximately value 1018 cm–3. The developed analytical model of the degradation mechanism allows to perform selection of a semiconductor and estimation of a laser operating mode under conditions of increased radiation power.
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Shikin, V. B., and N. I. Shikina. "Charged dislocations in semiconductors." Physica Status Solidi (a) 108, no. 2 (August 16, 1988): 669–81. http://dx.doi.org/10.1002/pssa.2211080224.

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Smith, P., and J. Narayan. "Dislocation and solid-phase epitaxial growth microstructure control by Ar+ implantation for gettering in semiconductors." Proceedings, annual meeting, Electron Microscopy Society of America 44 (August 1986): 728–29. http://dx.doi.org/10.1017/s0424820100145017.

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Gettering of undesirable impurities from the junctions or the electrically active regions improves electrical characteristics of semiconductor devices. This removal of impurities can be accomplished either by point defects or more efficiently by line defects such as dislocations and small-angle grain boundaries. The small-angle grain boundaries containing arrays of dislocations constitute two-dimensional defects which are more effective in removing the impurities. This removal of undesirable impurities involves dislocation - impurity interaction and subsequent segregation of impurities at the dislocations. The gettering efficiency of dislocations is determined by the nature of dislocations and also by the stability of dislocation network against annealing. In previous studies, it has been shown Ar+ implantation damage is very effective in gettering undesireable impurities. However, the mechanisms of enhanced gettering by Ar+ ion damage were not clear. The purpose of this investigation was to explore the mechanism of enhanced gettering by Ar+ damage and charaterize the Ar+ damage as a function of annealing treatments.
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Zhang, Huili, Chun Zhang, Chunhua Zeng, and Lumei Tong. "The Properties of Shuffle Screw Dislocations in Semiconductors Silicon and Germanium." Open Materials Science Journal 9, no. 1 (May 29, 2015): 10–13. http://dx.doi.org/10.2174/1874088x01509010010.

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The dislocation widths, Peierls barriers and Peierls stresses for shuffle screw dislocations in diamond structure crystals, Si and Ge, have been calculated by the improved P-N theory. The widths are about 0.6b, where b is the Burgers vector. The Peierls barrier for shuffle screw dislocation in Si and Ge, is about 3.61~4.61meV/Å and 5.31~13.32meV/Å, respectively. The Peierls stress is about 0.28~0.33GPa and 0.31~0.53GPa, respectively. The calculated Peierls barriers and stresses are likely the results of shuffle screw dislocation with metastable core which is centered on the bond between two atoms.
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George, A., and J. Rabier. "Dislocations and plasticity in semiconductors. I — Dislocation structures and dynamics." Revue de Physique Appliquée 22, no. 9 (1987): 941–66. http://dx.doi.org/10.1051/rphysap:01987002209094100.

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Dissertations / Theses on the topic "Dislocations in semiconductors"

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Bigger, James R. K. "Dislocations in semiconductors." Thesis, University of Oxford, 1992. http://ora.ox.ac.uk/objects/uuid:2be9288d-caee-4070-b535-b8fc6406b4d1.

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A set of codes with 3D periodic boundary conditions has been developed to model dislocations in semiconductors. Several schemes have been used to investigate the atomic structure of dislocations; classical potentials incorporated in a Molecular Dynamics framework, a tightbinding k-space scheme and ab initio pseudopotential codes developed at Cambridge and Edinburgh. An error has been detected in previous work that modelled dislocations using periodic boundary conditions. It is demonstrated, for the 90° and 30° Shockley partials, that a mismatch at the periodic boundaries leads to erroneous atomic and particularly electronic structures. A new approach is proposed which through its geometry obviates this problem. The Stillinger Weber potential has been found to predict a completely new type of reconstruction for the 90° partial. Recent work by other authors confirms this and predicts significantly different results to earlier work. A thorough investigation has been made into the bonding processes involved in the core of the 90° partial. This study has involved reproducing much of the earlier work to understand why there has been such poor agreement between various authors. The reconstruction of the 90° partial is found to involve a symmetry lowering displacement intimately connected to its electronic structure. The band-gap is predicted to be clear of states, except for the possibility of shallow states at both band edges, which contradicts the findings of the most recent work on this partial by other authors. The interaction of phosphorous with the 90° partial has been studied using the tightbinding model. The Hamiltonian has been parameterised by comparing the predictions to an earlier ab initio cluster method study. Good qualitative agreement with the ab initio work is obtained, including the prediction of a strong dislocation locking effect by phosphorous. Preliminary studies on the unreconstructed 30° partial show that phosphorous is strongly bound to the three-fold coordinated sites resulting in no states in the indirect band-gap. The modelling of interstitial copper at the core of the 90° partial has been initiated. The ab initio codes have been used and new silicon and copper pseudopotentials tested. The first attempt to model copper located interstitially in the core was not successful and the reasons for this have been identified. However, it is evident from this investigation that the neutral copper strongly repels and does not form bonds with the surrounding silicon atoms. A review is given of two techniques that have been developed to obtain the thermally averaged structure and concentration of vacancies at dislocations, together with a preliminary investigation on the Frank partial.
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Ren, Qiang. "Dislocations in monolayers and semiconductors." Thesis, University of Ottawa (Canada), 1995. http://hdl.handle.net/10393/10014.

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Four different aspects of the properties of dislocations in monolayer and semiconductors have been investigated: (i) Using atomic relaxation techniques, dislocation dipoles of various sizes and orientations have been studied for monolayers with the Lennard-Jones potential (LJP) and the nearest-neighbour piecewise linear force (PLF) interactions. In the WP system the lower energy vacancy dipoles have over a wide range of angles an energy which is mainly a function of the vacancy content of the dipole. There is a competition between the elastic forces and the topological constraints which favour a five-fold coordinate vacancy (FCV) at the centre of each core. For the short range PLF system the lattice usually compresses upon the introduction of a dislocation, a consequence of the soft core of the interaction potential, and interstitial dipoles are lower in energy. For the long range LJP system the dislocations are mobile whereas for the PLF system they are pinned. The relevance of these results to existing theories of melting are discussed. (ii) Using generalized stacking-fault (GSF) energies obtained from first-principles density-functional calculations, a zero-temperature model for dislocations in silicon is constructed within the framework of a Peierls-Nabarro (PN) model. Core widths, core energies, PN pinning energies, and stresses are calculated for various possible perfect and imperfect dislocations. Both shuffle and glide sets are considered. 90$\sp\circ$ partials are shown to have a lower Peierls stress (PS) than 30$\sp\circ$ partials in accord with experiment. (iii) We have also studied by atomic relaxation techniques the properties of dislocations in silicon, modelled by the empirical potential of Stillinger and Weber. In order to compare with the preceding calculation no reconstruction is allowed. We find no evidence of dissociation in the shuffle dislocations. Within this model shuffle dislocations glide along their slipping planes. On the other hand, glide sets are shown to glide only in dissociated form. The dislocation displacement fields are essentially planar. The PS is found to be isotropic within the (111) plane. In other words the minimum stress at 0K required to move the dislocation in any direction with in that plane has the same projection unto the Burgers vector, the PS of the dislocation. Our PS are in good agreement with those from (ii). (iv) Using a simple two dimensional UP model, relaxation mechanisms of the epitaxial strain layers (ESL) have been simulated for various misfits and layer thickness. In this model, the relationship of two competing relaxation mechanisms is found. At small misfit, strain is released by nucleating misfit dislocations from the edges of system. This process is more favourable for the thicker layer. At large misfit, stress is relaxed through surface instability, allowing easy generation of misfit dislocations from the surface. Those results are qualitatively in agreement with experiments.
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Galloway, Simon A. "The electrical properties of dislocations in GaAs." Thesis, University of Oxford, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.386991.

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Warren, P. D. "The relation between electronic and mechanical properties of non-metals." Thesis, University of Oxford, 1987. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.379900.

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Fell, Timothy S. "A quantitative EBIC study of dislocations and their interaction with impurities in silicon." Thesis, University of Oxford, 1992. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.305415.

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Baghani, Erfan. "Electrical properties of dislocations within the nitride based semiconductors gallium nitride and indium nitride." Thesis, University of British Columbia, 2012. http://hdl.handle.net/2429/43581.

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Dislocation lines affect the electrical and optical properties of semiconductors. In this research, the effect that the threading dislocation lines have on the free electron concentration and the electron mobility within gallium nitride and indium nitride is investigated. A formulation is developed for obtaining the screening space charge concentration and the corresponding electrostatic potential profile surrounding the dislocation lines. The resultant electrostatic potential profile has then been used to compute the associated electron mobility, limited by scattering from the charged dislocation lines. As part of this research, a Gibbs factor formalism is also developed that can readily obtain the occupation statistics of the defect sites associated with the threading dislocation lines.
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MacPherson, Glyn. "Distribution and control of misfit dislocations in indium gallium arsenide layers grown on gallium arsenide substrates." Thesis, University of Liverpool, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.318239.

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Lei, Haile. "Effect of point defects and dislocations on electrical and optical properties of III-V semiconductors." [S.l. : s.n.], 2003. http://deposit.ddb.de/cgi-bin/dokserv?idn=969927231.

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Giannattasio, Armando. "Interaction of oxygen and nitrogen impurities with dislocations in silicon single-crystals." Thesis, University of Oxford, 2004. http://ora.ox.ac.uk/objects/uuid:41cf8568-8411-4a85-8788-7d390307c7c3.

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An experimental technique based on the immobilisation of dislocations by segregation of impurity atoms to the dislocation core (dislocation locking) has been developed and used to investigate the critical conditions for slip occurrence in Czochralski-grown and nitrogen-doped floating-zone-grown silicon crystals. The accumulation of nitrogen and oxygen impurities along a dislocation and the resulting dislocation locking effect has been investigated in silicon samples subjected to different annealing conditions. In particular, the stress needed to unlock the dislocations after their decoration by impurities has been measured as a function of annealing duration and temperature. The approach used in this study has allowed the determination of new diffusivity data for oxygen and nitrogen in silicon in the technologically important range of temperatures 350-850°C. No other data covering such wide temperature range are available in the literature. In addition to transport properties, the binding energy of an impurity atom to a dislocation in silicon has been deduced from the experimental data in the case of oxygen and nitrogen impurities. A discussion in terms of the impurity species responsible for transport (monomers or dimers) and dislocation locking is also presented. The role of oxide precipitates in the generation of glide dislocation loops and the parameters affecting the occurrence of slip have been investigated in silicon samples containing precipitates of different sizes and different morphologies. The fundamental parameters deduced in this work have been used to develop a numerical model to investigate the effect of different heat treatments on the mechanical properties of silicon wafers containing a controlled distribution of impurities. This model has then been used to simulate real wafer processing conditions during device fabrication to show how they may be modified to increase dislocation locking. It is hoped that these results will have relevance to how wafers are processed in order to minimise or eliminate dislocation multiplication and consequent warpage.
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Lohonka, Radek. "Plasticity of the compound semiconductors at low temperatures : modelling of the uniaxial compression and indentation tests." Toulouse, INSA, 2002. http://www.theses.fr/2002ISAT0013.

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Ce travail est une contribution à l'étude de la plasticité des semi-conducteurs composés dans le domaine basse température--forte contrainte. La compression uniaxiale est simulée à partir des formalismes de Haasen-Alexander ou de Schoeck, adaptés pour des dislocations de mobilité différente, en glissement simple ou multiple. Il est impossible de décrire la plasticité en deçà d'une température critique à l'aide des lois de vitesses de dislocations disponibles, ce qui suggère un changement de mécanisme microscopique. L'effet photoplastique négatif est également abordé. La zone plastique autour d'une indentation Vickers est modélisée en considérant les expressions analytiques du tenseur des contraintes élastiques: un champ de contrainte sphérique constitue une bonne approximation. Les premiers stades de la formation de cette zone sont calculés par la méthode des éléments finis en introduisant les lois constitutives de la plasticité
This thesis deals with the plastic behaviour of compound semiconductors in the low temperature--high stress regime. Compressive stress-strain curves are calculated with models based on the formalisms of Alexander-Haasen or Schoeck extended to include simple glide/multiglide and one/three types of perfect dislocations with different mobilities. The impossibility to describe the crystal plasticity below some temperature with the available dislocation velocities data suggests a change in the controlling microscopic mechanisms. The negative photoplastic effect in GaAs is simulated. Modelling the response of the crystal to Vickers indentation is performed using elastic analytical expressions for the stress tensor: the stress distribution can be considered as nearly spherical although the plastic zone is far from it. Early stages of the formation of the plastic zone are described with the continuum crystal plasticity theory implementing the constitutive laws into the finite element method
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Books on the topic "Dislocations in semiconductors"

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Symposium "Dislocations and Interfaces in Semiconductors" (1988 Phoenix, Ariz.). Dislocations and interfaces in semiconductors: Proceedings of a symposium "Dislocations and Interfaces in Semiconductors". Warrendale, Pa: Metallurgical Society, 1988.

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G, Roberts S., Holt D. B, and Wilshaw P. R, eds. Structure and properties of dislocations in semiconductors 1989: Proceedings of the Sixth International Symposium on the Structure and Properties of Dislocations in Semiconductors held at the University of Oxford, 5-8 April 1989. Bristol: Institute of Physics, 1989.

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Mezhdunarodnai͡a, konferent͡sii͡a svoĭstva i. struktura dislokat͡siĭ v. poluprovodnikakh (5th 1986 Moscow R. S. F. S. R. ). V Mezhdunarodnai͡a konferent͡sii͡a svoĭstva i struktura dislokat͡siĭ v poluprovodnikakh: Sbornik dokladov : Moskva, SSSR, 17-22 marta 1986 g. Chernogolovka: Akademii͡a nauk SSSR, In-t fiziki tverdogo tela, 1989.

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Berg, A. M. Transition metal dislocation interactions in semiconductor silicon. Manchester: UMIST, 1993.

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Fionova, L. K. Grain boundaries in metals and semiconductors. Les Ulis, France: Editions de Physique, 1993.

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Dislocations and interfaces in semiconductors. Warrendale, Pa: Metallurgical Society, 1988.

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N, Georgobiani A., and Sheĭnkman M. K, eds. Fizika soedineniĭ AI̳I̳BV̳I̳. Moskva: "Nauka," Glav. red. fiziko-matematicheskoĭ lit-ry, 1986.

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Book chapters on the topic "Dislocations in semiconductors"

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Alexander, H. "Dislocations in Semiconductors." In Springer Proceedings in Physics, 2–12. Berlin, Heidelberg: Springer Berlin Heidelberg, 1991. http://dx.doi.org/10.1007/978-3-642-76385-4_1.

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Sumino, Koji. "Dislocations in GaAs Crystals." In Defects and Properties of Semiconductors, 3–24. Dordrecht: Springer Netherlands, 1987. http://dx.doi.org/10.1007/978-94-009-4766-5_1.

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Pohoryles, B., and R. Nitecki. "DC Conduction Along Dislocations in Semiconductors." In Springer Proceedings in Physics, 40–44. Berlin, Heidelberg: Springer Berlin Heidelberg, 1991. http://dx.doi.org/10.1007/978-3-642-76385-4_5.

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Sumino, Koji. "Interaction of Dislocations with Impurities in Silicon." In Defects and Properties of Semiconductors, 227–59. Dordrecht: Springer Netherlands, 1987. http://dx.doi.org/10.1007/978-94-009-4766-5_15.

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Sumino, Koji. "Interaction of Impurities with Dislocations in Semiconductors." In Point and Extended Defects in Semiconductors, 77–94. Boston, MA: Springer US, 1989. http://dx.doi.org/10.1007/978-1-4684-5709-4_6.

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Wilshaw, P. R., T. S. Fell, and G. R. Booker. "Recombination at Dislocations in Silicon and Gallium Arsenide." In Point and Extended Defects in Semiconductors, 243–56. Boston, MA: Springer US, 1989. http://dx.doi.org/10.1007/978-1-4684-5709-4_18.

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Labusch, R., and J. Hess. "Conductivity of Grain Boundaries and Dislocations in Semiconductors." In Point and Extended Defects in Semiconductors, 15–37. Boston, MA: Springer US, 1989. http://dx.doi.org/10.1007/978-1-4684-5709-4_2.

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Tomizawa, K., K. Sassa, Y. Shimanuki, and J. Nishizawa. "Dislocations in GaAs Crytals Grown by As-Pressure Controlled Czochralski Method." In Defects and Properties of Semiconductors, 25–36. Dordrecht: Springer Netherlands, 1987. http://dx.doi.org/10.1007/978-94-009-4766-5_2.

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Thibault-Desseaux, J., J. L. Putaux, and H. O. K. Kirchner. "Interaction between Point-Defects, Dislocations and a Grain Boundary: A HREM Study." In Point and Extended Defects in Semiconductors, 153–64. Boston, MA: Springer US, 1989. http://dx.doi.org/10.1007/978-1-4684-5709-4_11.

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Kravchenko, V. Ya. "Electronic States on Dislocations in Semiconductors and the Optical Spectrum Peculiarities." In Springer Proceedings in Physics, 56–59. Berlin, Heidelberg: Springer Berlin Heidelberg, 1991. http://dx.doi.org/10.1007/978-3-642-76385-4_8.

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Conference papers on the topic "Dislocations in semiconductors"

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Hovakimian, L. B. "Non-perturbative Scattering of Electrons by Charged Dislocations." In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994570.

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Reiche, M., M. Kittler, H. M. Krause, and H. Übensee. "Carrier transport on dislocations in silicon." In INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS 2013: Proceedings of the 27th International Conference on Defects in Semiconductors, ICDS-2013. AIP Publishing LLC, 2014. http://dx.doi.org/10.1063/1.4865599.

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Cavalcoli, D., A. Minj, S. Pandey, and A. Cavallini. "Electrical properties of dislocations in III-Nitrides." In INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS 2013: Proceedings of the 27th International Conference on Defects in Semiconductors, ICDS-2013. AIP Publishing LLC, 2014. http://dx.doi.org/10.1063/1.4865657.

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Iglesias, V., M. Porti, C. Couso, Q. Wu, S. Claramunt, M. Nafria, E. Miranda, N. Domingo, G. Bersuker, and A. Cordes. "Threading dislocations in III-V semiconductors: Analysis of electrical conduction." In 2015 IEEE International Reliability Physics Symposium (IRPS). IEEE, 2015. http://dx.doi.org/10.1109/irps.2015.7112788.

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Brunkov, P. N. "Capacitance spectroscopy study of InAs quantum dots and dislocations in p-GaAs matrix." In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994343.

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Lastras-Martinez, Luis F., and Alfonso Lastras-Martinez. "Reflectance-difference spectroscopy: a technique for characterization of dislocations in semiconductors." In Photonics West '96, edited by Weng W. Chow and Marek Osinski. SPIE, 1996. http://dx.doi.org/10.1117/12.239015.

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Kobayashi, Ryo, and Takashi Nakayama. "First-Principles Study of Stair-rod Dislocations in Si and GaAs Stacking-Fault Tetrahedron Defects." In PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006. AIP, 2007. http://dx.doi.org/10.1063/1.2729846.

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8

Foronda, Humberto Miguel, Alexey E. Romanov, Erin C. Young, Christian A. Robertson, Glenn E. Beltz, and James S. Speck. "Curvature of HVPE c-plane grown GaN wafers in the relation to stress gradients caused by inclined threading dislocations." In 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)]. IEEE, 2016. http://dx.doi.org/10.1109/iciprm.2016.7528773.

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9

Robison, Andrew, Lei Lei, Sowmya Ramarapu, and Marisol Koslowski. "Interface Effects in Strained Thin Films." In ASME 2009 International Mechanical Engineering Congress and Exposition. ASMEDC, 2009. http://dx.doi.org/10.1115/imece2009-12539.

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Abstract:
Crystalline films grown epitaxially on a substrate consisting of a different crystalline material are of considerable interest in optoelectronic devices and the semiconductor industry. The film and substrate have in general different lattice parameters. This lattice mismatch affects the quality of interfaces and can lead to very high densities of misfit dislocations. Here we study the evolution of these misfit dislocations in a single crystal thin film. In particular, we consider the motion of a dislocation gliding on its slip plane within the film and its interaction with multiple obstacles and sources. Our results show the effect of obstacles such as precipitates and other dislocations on the evolution of a threading dislocation in a metallic thin film. We also show that the material becomes harder as the film thickness decreases in excellent agreement with experiments.
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10

Macodiyo, Dan O., Hitoshi Soyama, and Kazuo Hayashi. "Characterization of Defects for Effective Gettering in Silicon Wafer and Polysilicon Thin Films." In ASME 8th Biennial Conference on Engineering Systems Design and Analysis. ASMEDC, 2006. http://dx.doi.org/10.1115/esda2006-95340.

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The scaling down of commercial products has fueled the rapid development of micro- and nano-electromechanical systems (MEMS/NEMS). The enabling technologies of surface micromachining for silicon has made it compatible with industry strategies towards integrated circuits used in actuation and controls of systems. During the silicon processing, microdefects do occur. If properly controlled, they act as gettering sites for metallic species and hence remove unwanted impurities in the active device regions of semiconductor devices. On the other hand, microdefects can be responsible for plastic deformation of silicon wafer. The occurrence of dislocations in the active device regions causes current leakage and even failure of devices. Determination of the optimum point at which bulk microdefects can be considered to have beneficial gettering effect in silicon wafer and the exact mechanisms by which mobile dislocations are generated in the bulk of an initially dislocation free silicon wafer are not well understood. The purpose of this study is to analyze types of dislocation misfits and the corresponding defect size that is responsible for effective gettering due to cavitation impacts. The authors have already studied electrical characteristics of backside damage gettering by cavitation impact [1–3]. Polysilicon has been grown on thin silicon suboxide layer by a gas-source molecular beam epitaxy (MBE). MBE was done by placing the silicon substrate in an ultra-high vacuum chamber and heating it to 800 °C for 10 min and then at 700 °C for 3 hours at a flow rate of 2.5 sccm. The atomic force microscopy (AFM), micro Raman spectroscopy and transmission electron microscopy (TEM) were used to characterize the Czochralski silicon (CZ–Si) in the plane (100) and poly-Si/SiO2 in the atomic scale before and after gettering the specimen. AFM results showed that the surface roughness and threshold deformation were 2.3 nm and 4.4 nm, respectively. Plan-view TEM analysis of silicon showed the coexistence of single dislocation and narrow dipoles. It can be concluded that cavitation impacts causes dislocation dipoles on CZ-Si(100) which are associated with dislocation loops. The initiation point takes the form of a micro Frank-Read dislocation source, less than 50 nm, that cause dislocation dipoles which are associated with dislocation loops. Plan view TEM observations reveal that the size of the dislocation misfits was approximately 100 nm. The polysilicon surface had a higher residual stresses when it was subjected to cavitation impacts. The cross-sectional TEM observation on poly-Si revealed random crystals on the noncavitated specimens while a mixer of columnar-textured grains on the specimen treated by cavitation. The textured grains have rough edges and the intra-grain size is about 40 nm. Deformation twins and set of streaks from an array of dislocations were observed in the cavitated poly-Si/SiO2 specimens. The spacing between the large grains was 8 nm.
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Reports on the topic "Dislocations in semiconductors"

1

Watson, G. P., and M. Matragrano. Nucleation, propagation, electronic levels and elimination of misfit dislocations in III-V semiconductor interfaces. Final report. Office of Scientific and Technical Information (OSTI), March 1995. http://dx.doi.org/10.2172/69183.

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2

Ast, D. G., G. P. Watson, and M. Matragrano. Nucleation, propagation, electronic levels and elimination of misfit dislocations in III-V semiconductor interfaces. Final report, September 1, 1986--August 31, 1993. Office of Scientific and Technical Information (OSTI), March 1995. http://dx.doi.org/10.2172/82424.

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