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Relevant bibliographies by topics / Dislocations in semiconductors

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Academic literature on the topic 'Dislocations in semiconductors'

Author: Grafiati

Published: 4 June 2021

Last updated: 2 February 2022

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Journal articles on the topic "Dislocations in semiconductors"

1

Brinkman, W. F. "Electron Microscopy and the Electronics Industry: Partners in Development." Proceedings, annual meeting, Electron Microscopy Society of America 48, no. 1 (1990): 12–13. http://dx.doi.org/10.1017/s0424820100178811.

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Since the invention of the transistor and the birth of the solid-state electronics industry, electron microscopy has been an integral part of the boom in the science and technology of semiconductors. The relationship has been symbiotic: the technique of microscopy has probably gained almost as much as the electronics industry from innovations. Historically, semiconductor research has always come down to a question of the growth of perfect materials with perfect interfaces, and microscopic analysis below the optical level has been essential to improvements. When applications for the semiconduct

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2

Morrison, S. Roy. "1/f Noise from levels in a linear or planar array: Dislocations in metals." Canadian Journal of Physics 71, no. 3-4 (1993): 147–51. http://dx.doi.org/10.1139/p93-022.

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This report compares the double-layer noise expected for metal dislocations with the earlier analysis of semiconductor dislocations. In both cases we describe the asymmetric trapping of charge over an electrical double layer at the dislocation. The earlier reports describe how a 1/f spectrum should be observed, in the form of a truncated Lorentzian, if the double-layer voltage shows fluctuations greater than kT/q. This report describes the origin of a double layer at metal dislocations that fulfills the requirements. It shows why, despite the substantial difference in parameters, the noise pre

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3

Yonenaga, Ichiro, Koji Sumino, Gunzo Izawa, Hisao Watanabe, and Junji Matsui. "Mechanical property and dislocation dynamics of GaAsP alloy semiconductor." Journal of Materials Research 4, no. 2 (1989): 361–65. http://dx.doi.org/10.1557/jmr.1989.0361.

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The mechanical behavior of GaAsP alloy semiconductor was investigated by means of compressive deformation and compared with those of GaAs and GaP. The nature of collective motion of dislocations during deformation was determined by strain-rate cycling tests. The dynamic characteristics of dislocations in GaAsP were found to be similar to those in elemental and compound semiconductors such as Si, Ge, GaAs, and GaP. An alloy semiconductor has a component of the flow stress that is temperature-insensitive and is absent in compound semiconductors.

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4

Hirsch, P. B. "Dislocations in semiconductors." Materials Science and Technology 1, no. 9 (1985): 666–77. http://dx.doi.org/10.1179/mst.1985.1.9.666.

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5

Lu, P., R. W. Glaisher, and David J. Smith. "Atomic structure of CdTe dislocations studied by HREM." Proceedings, annual meeting, Electron Microscopy Society of America 47 (August 6, 1989): 576–77. http://dx.doi.org/10.1017/s0424820100154858.

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The determination of the atomic core of dislocations in semiconductors is a challenging problem for high-resolution electron microscopy(HREM). In previous studies, various defects in elemental semiconductors, III-V and II-VI compound semiconductors have been reported. In particular, the core structure of the 30° partial dislocations in silicon, which are dissociated from a perfect 60° dislocation, have been deduced. present study, various CdTe dislocations have been imaged at 400keV. and their core structures have been analyzed with assistance from multi-slice image simulations. Sections of Cd

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6

Garkavenko, A. S., V. A. Mokritsky, O. V. Maslov, and A. V. Sokolov. "Nature of Degradation in Semiconductor Lasers with Electronic Energy Pumping. Theoretical Background." Science & Technique 19, no. 4 (2020): 311–19. http://dx.doi.org/10.21122/2227-1031-2020-19-4-311-319.

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. Catastrophic degradation takes place in case of reaching critical values of laser radiation density power in semiconductor lasers with electronically pumped energy made from single crystals of some compounds. It has been accompanied by mechanical destruction of the surface at resonator ends, an irreversible decrease in radiation power and an increase in generation threshold. Moreover, during the catastrophic degradation of semiconductor lasers under the action of intrinsic radiation, significant changes in the crystal structure occur within the single crystal: dislocation density reaches a v

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7

Shikin, V. B., and N. I. Shikina. "Charged dislocations in semiconductors." Physica Status Solidi (a) 108, no. 2 (1988): 669–81. http://dx.doi.org/10.1002/pssa.2211080224.

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8

Smith, P., and J. Narayan. "Dislocation and solid-phase epitaxial growth microstructure control by Ar+ implantation for gettering in semiconductors." Proceedings, annual meeting, Electron Microscopy Society of America 44 (August 1986): 728–29. http://dx.doi.org/10.1017/s0424820100145017.

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Gettering of undesirable impurities from the junctions or the electrically active regions improves electrical characteristics of semiconductor devices. This removal of impurities can be accomplished either by point defects or more efficiently by line defects such as dislocations and small-angle grain boundaries. The small-angle grain boundaries containing arrays of dislocations constitute two-dimensional defects which are more effective in removing the impurities. This removal of undesirable impurities involves dislocation - impurity interaction and subsequent segregation of impurities at the

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9

Zhang, Huili, Chun Zhang, Chunhua Zeng, and Lumei Tong. "The Properties of Shuffle Screw Dislocations in Semiconductors Silicon and Germanium." Open Materials Science Journal 9, no. 1 (2015): 10–13. http://dx.doi.org/10.2174/1874088x01509010010.

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The dislocation widths, Peierls barriers and Peierls stresses for shuffle screw dislocations in diamond structure crystals, Si and Ge, have been calculated by the improved P-N theory. The widths are about 0.6b, where b is the Burgers vector. The Peierls barrier for shuffle screw dislocation in Si and Ge, is about 3.61~4.61meV/Å and 5.31~13.32meV/Å, respectively. The Peierls stress is about 0.28~0.33GPa and 0.31~0.53GPa, respectively. The calculated Peierls barriers and stresses are likely the results of shuffle screw dislocation with metastable core which is centered on the bond between two at

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10

George, A., and J. Rabier. "Dislocations and plasticity in semiconductors. I — Dislocation structures and dynamics." Revue de Physique Appliquée 22, no. 9 (1987): 941–66. http://dx.doi.org/10.1051/rphysap:01987002209094100.

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Dissertations / Theses on the topic "Dislocations in semiconductors"

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Bigger, James R. K. "Dislocations in semiconductors." Thesis, University of Oxford, 1992. http://ora.ox.ac.uk/objects/uuid:2be9288d-caee-4070-b535-b8fc6406b4d1.

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A set of codes with 3D periodic boundary conditions has been developed to model dislocations in semiconductors. Several schemes have been used to investigate the atomic structure of dislocations; classical potentials incorporated in a Molecular Dynamics framework, a tightbinding k-space scheme and ab initio pseudopotential codes developed at Cambridge and Edinburgh. An error has been detected in previous work that modelled dislocations using periodic boundary conditions. It is demonstrated, for the 90° and 30° Shockley partials, that a mismatch at the periodic boundaries leads to erroneous ato

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2

Ren, Qiang. "Dislocations in monolayers and semiconductors." Thesis, University of Ottawa (Canada), 1995. http://hdl.handle.net/10393/10014.

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Four different aspects of the properties of dislocations in monolayer and semiconductors have been investigated: (i) Using atomic relaxation techniques, dislocation dipoles of various sizes and orientations have been studied for monolayers with the Lennard-Jones potential (LJP) and the nearest-neighbour piecewise linear force (PLF) interactions. In the WP system the lower energy vacancy dipoles have over a wide range of angles an energy which is mainly a function of the vacancy content of the dipole. There is a competition between the elastic forces and the topological constraints which favour

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3

Galloway, Simon A. "The electrical properties of dislocations in GaAs." Thesis, University of Oxford, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.386991.

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4

Warren, P. D. "The relation between electronic and mechanical properties of non-metals." Thesis, University of Oxford, 1987. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.379900.

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5

Fell, Timothy S. "A quantitative EBIC study of dislocations and their interaction with impurities in silicon." Thesis, University of Oxford, 1992. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.305415.

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6

Baghani, Erfan. "Electrical properties of dislocations within the nitride based semiconductors gallium nitride and indium nitride." Thesis, University of British Columbia, 2012. http://hdl.handle.net/2429/43581.

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Dislocation lines affect the electrical and optical properties of semiconductors. In this research, the effect that the threading dislocation lines have on the free electron concentration and the electron mobility within gallium nitride and indium nitride is investigated. A formulation is developed for obtaining the screening space charge concentration and the corresponding electrostatic potential profile surrounding the dislocation lines. The resultant electrostatic potential profile has then been used to compute the associated electron mobility, limited by scattering from the charged dislo

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7

MacPherson, Glyn. "Distribution and control of misfit dislocations in indium gallium arsenide layers grown on gallium arsenide substrates." Thesis, University of Liverpool, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.318239.

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8

Lei, Haile. "Effect of point defects and dislocations on electrical and optical properties of III-V semiconductors." [S.l. : s.n.], 2003. http://deposit.ddb.de/cgi-bin/dokserv?idn=969927231.

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9

Giannattasio, Armando. "Interaction of oxygen and nitrogen impurities with dislocations in silicon single-crystals." Thesis, University of Oxford, 2004. http://ora.ox.ac.uk/objects/uuid:41cf8568-8411-4a85-8788-7d390307c7c3.

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An experimental technique based on the immobilisation of dislocations by segregation of impurity atoms to the dislocation core (dislocation locking) has been developed and used to investigate the critical conditions for slip occurrence in Czochralski-grown and nitrogen-doped floating-zone-grown silicon crystals. The accumulation of nitrogen and oxygen impurities along a dislocation and the resulting dislocation locking effect has been investigated in silicon samples subjected to different annealing conditions. In particular, the stress needed to unlock the dislocations after their decoration b

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10

Lohonka, Radek. "Plasticity of the compound semiconductors at low temperatures : modelling of the uniaxial compression and indentation tests." Toulouse, INSA, 2002. http://www.theses.fr/2002ISAT0013.

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Ce travail est une contribution à l'étude de la plasticité des semi-conducteurs composés dans le domaine basse température--forte contrainte. La compression uniaxiale est simulée à partir des formalismes de Haasen-Alexander ou de Schoeck, adaptés pour des dislocations de mobilité différente, en glissement simple ou multiple. Il est impossible de décrire la plasticité en deçà d'une température critique à l'aide des lois de vitesses de dislocations disponibles, ce qui suggère un changement de mécanisme microscopique. L'effet photoplastique négatif est également abordé. La zone plastique autour d

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Books on the topic "Dislocations in semiconductors"

1

Symposium "Dislocations and Interfaces in Semiconductors" (1988 Phoenix, Ariz.). Dislocations and interfaces in semiconductors: Proceedings of a symposium "Dislocations and Interfaces in Semiconductors". Metallurgical Society, 1988.

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2

G, Roberts S., Holt D. B, and Wilshaw P. R, eds. Structure and properties of dislocations in semiconductors 1989: Proceedings of the Sixth International Symposium on the Structure and Properties of Dislocations in Semiconductors held at the University of Oxford, 5-8 April 1989. Institute of Physics, 1989.

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3

Mezhdunarodnai͡a, konferent͡sii͡a svoĭstva i. struktura dislokat͡siĭ v. poluprovodnikakh (5th 1986 Moscow R. S. F. S. R. ). V Mezhdunarodnai͡a konferent͡sii͡a svoĭstva i struktura dislokat͡siĭ v poluprovodnikakh: Sbornik dokladov : Moskva, SSSR, 17-22 marta 1986 g. Akademii͡a nauk SSSR, In-t fiziki tverdogo tela, 1989.

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4

Berg, A. M. Transition metal dislocation interactions in semiconductor silicon. UMIST, 1993.

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5

Fionova, L. K. Grain boundaries in metals and semiconductors. Editions de Physique, 1993.

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6

Dislocations and interfaces in semiconductors. Metallurgical Society, 1988.

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7

N, Georgobiani A., and Sheĭnkman M. K, eds. Fizika soedineniĭ AI̳I̳BV̳I̳. "Nauka," Glav. red. fiziko-matematicheskoĭ lit-ry, 1986.

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Book chapters on the topic "Dislocations in semiconductors"

1

Alexander, H. "Dislocations in Semiconductors." In Springer Proceedings in Physics. Springer Berlin Heidelberg, 1991. http://dx.doi.org/10.1007/978-3-642-76385-4_1.

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2

Sumino, Koji. "Dislocations in GaAs Crystals." In Defects and Properties of Semiconductors. Springer Netherlands, 1987. http://dx.doi.org/10.1007/978-94-009-4766-5_1.

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3

Pohoryles, B., and R. Nitecki. "DC Conduction Along Dislocations in Semiconductors." In Springer Proceedings in Physics. Springer Berlin Heidelberg, 1991. http://dx.doi.org/10.1007/978-3-642-76385-4_5.

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4

Sumino, Koji. "Interaction of Dislocations with Impurities in Silicon." In Defects and Properties of Semiconductors. Springer Netherlands, 1987. http://dx.doi.org/10.1007/978-94-009-4766-5_15.

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5

Sumino, Koji. "Interaction of Impurities with Dislocations in Semiconductors." In Point and Extended Defects in Semiconductors. Springer US, 1989. http://dx.doi.org/10.1007/978-1-4684-5709-4_6.

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6

Wilshaw, P. R., T. S. Fell, and G. R. Booker. "Recombination at Dislocations in Silicon and Gallium Arsenide." In Point and Extended Defects in Semiconductors. Springer US, 1989. http://dx.doi.org/10.1007/978-1-4684-5709-4_18.

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7

Labusch, R., and J. Hess. "Conductivity of Grain Boundaries and Dislocations in Semiconductors." In Point and Extended Defects in Semiconductors. Springer US, 1989. http://dx.doi.org/10.1007/978-1-4684-5709-4_2.

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8

Tomizawa, K., K. Sassa, Y. Shimanuki, and J. Nishizawa. "Dislocations in GaAs Crytals Grown by As-Pressure Controlled Czochralski Method." In Defects and Properties of Semiconductors. Springer Netherlands, 1987. http://dx.doi.org/10.1007/978-94-009-4766-5_2.

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9

Thibault-Desseaux, J., J. L. Putaux, and H. O. K. Kirchner. "Interaction between Point-Defects, Dislocations and a Grain Boundary: A HREM Study." In Point and Extended Defects in Semiconductors. Springer US, 1989. http://dx.doi.org/10.1007/978-1-4684-5709-4_11.

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10

Kravchenko, V. Ya. "Electronic States on Dislocations in Semiconductors and the Optical Spectrum Peculiarities." In Springer Proceedings in Physics. Springer Berlin Heidelberg, 1991. http://dx.doi.org/10.1007/978-3-642-76385-4_8.

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Conference papers on the topic "Dislocations in semiconductors"

1

Hovakimian, L. B. "Non-perturbative Scattering of Electrons by Charged Dislocations." In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994570.

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2

Reiche, M., M. Kittler, H. M. Krause, and H. Übensee. "Carrier transport on dislocations in silicon." In INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS 2013: Proceedings of the 27th International Conference on Defects in Semiconductors, ICDS-2013. AIP Publishing LLC, 2014. http://dx.doi.org/10.1063/1.4865599.

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3

Cavalcoli, D., A. Minj, S. Pandey, and A. Cavallini. "Electrical properties of dislocations in III-Nitrides." In INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS 2013: Proceedings of the 27th International Conference on Defects in Semiconductors, ICDS-2013. AIP Publishing LLC, 2014. http://dx.doi.org/10.1063/1.4865657.

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4

Iglesias, V., M. Porti, C. Couso, et al. "Threading dislocations in III-V semiconductors: Analysis of electrical conduction." In 2015 IEEE International Reliability Physics Symposium (IRPS). IEEE, 2015. http://dx.doi.org/10.1109/irps.2015.7112788.

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5

Brunkov, P. N. "Capacitance spectroscopy study of InAs quantum dots and dislocations in p-GaAs matrix." In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994343.

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6

Lastras-Martinez, Luis F., and Alfonso Lastras-Martinez. "Reflectance-difference spectroscopy: a technique for characterization of dislocations in semiconductors." In Photonics West '96, edited by Weng W. Chow and Marek Osinski. SPIE, 1996. http://dx.doi.org/10.1117/12.239015.

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7

Kobayashi, Ryo, and Takashi Nakayama. "First-Principles Study of Stair-rod Dislocations in Si and GaAs Stacking-Fault Tetrahedron Defects." In PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006. AIP, 2007. http://dx.doi.org/10.1063/1.2729846.

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Foronda, Humberto Miguel, Alexey E. Romanov, Erin C. Young, Christian A. Robertson, Glenn E. Beltz, and James S. Speck. "Curvature of HVPE c-plane grown GaN wafers in the relation to stress gradients caused by inclined threading dislocations." In 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)]. IEEE, 2016. http://dx.doi.org/10.1109/iciprm.2016.7528773.

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Robison, Andrew, Lei Lei, Sowmya Ramarapu, and Marisol Koslowski. "Interface Effects in Strained Thin Films." In ASME 2009 International Mechanical Engineering Congress and Exposition. ASMEDC, 2009. http://dx.doi.org/10.1115/imece2009-12539.

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Crystalline films grown epitaxially on a substrate consisting of a different crystalline material are of considerable interest in optoelectronic devices and the semiconductor industry. The film and substrate have in general different lattice parameters. This lattice mismatch affects the quality of interfaces and can lead to very high densities of misfit dislocations. Here we study the evolution of these misfit dislocations in a single crystal thin film. In particular, we consider the motion of a dislocation gliding on its slip plane within the film and its interaction with multiple obstacles a

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Macodiyo, Dan O., Hitoshi Soyama, and Kazuo Hayashi. "Characterization of Defects for Effective Gettering in Silicon Wafer and Polysilicon Thin Films." In ASME 8th Biennial Conference on Engineering Systems Design and Analysis. ASMEDC, 2006. http://dx.doi.org/10.1115/esda2006-95340.

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The scaling down of commercial products has fueled the rapid development of micro- and nano-electromechanical systems (MEMS/NEMS). The enabling technologies of surface micromachining for silicon has made it compatible with industry strategies towards integrated circuits used in actuation and controls of systems. During the silicon processing, microdefects do occur. If properly controlled, they act as gettering sites for metallic species and hence remove unwanted impurities in the active device regions of semiconductor devices. On the other hand, microdefects can be responsible for plastic defo

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Reports on the topic "Dislocations in semiconductors"

1

Watson, G. P., and M. Matragrano. Nucleation, propagation, electronic levels and elimination of misfit dislocations in III-V semiconductor interfaces. Final report. Office of Scientific and Technical Information (OSTI), 1995. http://dx.doi.org/10.2172/69183.

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Ast, D. G., G. P. Watson, and M. Matragrano. Nucleation, propagation, electronic levels and elimination of misfit dislocations in III-V semiconductor interfaces. Final report, September 1, 1986--August 31, 1993. Office of Scientific and Technical Information (OSTI), 1995. http://dx.doi.org/10.2172/82424.

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