Relevant bibliographies by topics / Discrete Electronic Energy States

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Discrete Electronic Energy States'

Author: Grafiati
Published: 7 September 2023

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Journal articles on the topic "Discrete Electronic Energy States"

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Maeta, S., Y. Kamitani, M. Yoshiura, and T. Nukuto. "Behavior of the discrete energy states." IEEE Transactions on Dielectrics and Electrical Insulation 8, no. 3 (June 2001): 461–68. http://dx.doi.org/10.1109/94.933365.

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Rasulov, V. R., R. Ya Rasulov, M. A. Mamatova, and F. Qosimov. "Semiclassical theory of electronic states in multilayer semiconductors. Part 2." Journal of Physics: Conference Series 2388, no. 1 (December 1, 2022): 012158. http://dx.doi.org/10.1088/1742-6596/2388/1/012158.

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Abstract The electronic states in multilayer semiconductors are studied theoretically in the semiclassical approximation. In this case, the Schrödenger equation is solved, where the potential is expanded into a series along the coordinate and is limited by the first four terms. It is shown that, in this case, the energy spectrum takes on discrete values, and the bending of the energy spectrum increases as the size quantization order increases.
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Rasulov, V. R., R. Ya Rasulov, M. A. Mamatova, and F. Qosimov. "Semiclassical theory of electronic states in multilayer semiconductors. Part 1." Journal of Physics: Conference Series 2388, no. 1 (December 1, 2022): 012156. http://dx.doi.org/10.1088/1742-6596/2388/1/012156.

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Abstract States of electrons in multilayer semiconductor structures are theoretically investigated in the semiclassical approximation, where one-electron wave functions of the stationary Schrödinger equation are calculated in the presence of various types of potential, which is a slowly varying function of the coordinate. It is determined that the energy spectrum of electrons in the potential in the quadratic approximation takes discrete values and the steepness of the energy spectrum depends on the parameters of the expansion of the potential in coordinates.
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SOUZU, Y., and M. TSUKADA. "ELECTRONIC STATES OF MONOLAYER GRAPHITE COADSORBED WITH ALKALI ATOMS ON Ni(111) SURFACE." Surface Review and Letters 04, no. 06 (December 1997): 1337–40. http://dx.doi.org/10.1142/s0218625x97001772.

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The energy bands of the monolayer graphite (MG) on a Ni(111) surface, and that coadsorbed with alkali atoms, are calculated by the discrete variational Xα method. The π bands at the K point of the original MG show various different features depending on the alkali species and the structure parameters. For the case of the Na and Cs ternary system, the surface reconstruction of the Ni substrate is indicated.
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Ji, Xiaoli, Xiaoyu Tan, Tongbo Wei, Hongxi Lu, Junxi Wang, Fuhua Yang, and Jinmin Li. "Discrete energy states induced broadband emission from self-assembly InGaN quantum dots." Optical Materials 94 (August 2019): 237–40. http://dx.doi.org/10.1016/j.optmat.2019.05.049.

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Kheifets, Anatoli. "Revealing the Target Electronic Structure with Under-Threshold RABBIITT." Atoms 9, no. 3 (September 13, 2021): 66. http://dx.doi.org/10.3390/atoms9030066.

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The process of reconstruction of attosecond beating by interference of two-photon transitions (RABBITT) reveals the target atom electronic structure when one of the transitions proceeds from below the ionization threshold. Such an under-threshold RABBITT resonates with the target bound states and thus maps faithfully the discrete energy levels and the corresponding oscillator strengths. We demonstrate this sensitivity by considering the Ne atom driven by the combination of the XUV and IR pulses at the fundmanetal laser frequency in the 800 and 1000 nm ranges.
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Li, Zhi, Jincheng Zhuang, Li Wang, Haifeng Feng, Qian Gao, Xun Xu, Weichang Hao, et al. "Realization of flat band with possible nontrivial topology in electronic Kagome lattice." Science Advances 4, no. 11 (November 2018): eaau4511. http://dx.doi.org/10.1126/sciadv.aau4511.

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The energy dispersion of fermions or bosons vanishes in momentum space if destructive quantum interference occurs in a frustrated Kagome lattice with only nearest-neighbor hopping. A discrete flat band (FB) without any dispersion is consequently formed, promising the emergence of fractional quantum Hall states at high temperatures. Here, we report the experimental realization of an FB with possible nontrivial topology in an electronic Kagome lattice on twisted multilayer silicene. Because of the unique low-buckled two-dimensional structure of silicene, a robust electronic Kagome lattice has been successfully induced by moiré patterns after twisting the silicene multilayers. The electrons are localized in the Kagome lattice because of quantum destructive interference, and thus, their kinetic energy is quenched, which gives rise to an FB peak in the density of states. A robust and pronounced one-dimensional edge state has been revealed at the Kagome edge, which resides at higher energy than the FB. Our observations of the FB and the exotic edge state in electronic Kagome lattice open up the possibility that fractional Chern insulators could be realized in two-dimensional materials.
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Arutyunyan, Rafael V., and Alexander V. Osadchy. "The Systems of Volume-Localized Electron Quantum Levels of Charged Fullerenes." Journal of Nanomaterials 2018 (December 3, 2018): 1–10. http://dx.doi.org/10.1155/2018/7526869.

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The existence of a system of short-lived, discrete, volume-localized electron quantum levels in positively charged fullerenes is theoretically and numerically demonstrated using the example of fullerenes C60 and C20. Unlike experimentally and theoretically well-studied electron states localized in a thin surface layer, these electron states are due to the flat part of the Coulomb potential of a positively charged fullerene sphere. The energy width of the system of such discrete volume-localized levels depends on the charge and increases with increasing charge. For C60+1, the energy width is 0.16 a.u. and increases up to 0.9 a.u. for fullerene C60+10. Thus, the electrons captured on these discrete levels of fullerene form a sort of short-lived superheavy “nanoatom” or “nanoion,” in which the electrons are localized inside a positively charged spherical “nucleus” with an atomic mass of 240 a.u. for C20 and 720 a.u. for C60. Numerous published papers have demonstrated theoretically and experimentally the existence of metastable positively charged C60 fullerenes with a charge of +10 or more, which suggests the possibility of experimental observation of the considering system of volume-localized electronic states. In conclusion, questions are discussed and estimates are made of the possibility of generating coherent radiation at these transitions.
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Schuler, Bruno, Katherine A. Cochrane, Christoph Kastl, Edward S. Barnard, Edward Wong, Nicholas J. Borys, Adam M. Schwartzberg, D. Frank Ogletree, F. Javier García de Abajo, and Alexander Weber-Bargioni. "Electrically driven photon emission from individual atomic defects in monolayer WS2." Science Advances 6, no. 38 (September 2020): eabb5988. http://dx.doi.org/10.1126/sciadv.abb5988.

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Quantum dot–like single-photon sources in transition metal dichalcogenides (TMDs) exhibit appealing quantum optical properties but lack a well-defined atomic structure and are subject to large spectral variability. Here, we demonstrate electrically stimulated photon emission from individual atomic defects in monolayer WS2 and directly correlate the emission with the local atomic and electronic structure. Radiative transitions are locally excited by sequential inelastic electron tunneling from a metallic tip into selected discrete defect states in the WS2 bandgap. Coupling to the optical far field is mediated by tip plasmons, which transduce the excess energy into a single photon. The applied tip-sample voltage determines the transition energy. Atomically resolved emission maps of individual point defects closely resemble electronic defect orbitals, the final states of the optical transitions. Inelastic charge carrier injection into localized defect states of two-dimensional materials provides a powerful platform for electrically driven, broadly tunable, atomic-scale single-photon sources.
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ORTEGA, J. E., F. J. HIMPSEL, G. J. MANKEY, and R. F. WILLIS. "QUANTUM WELL STATES IN METALLIC THIN LAYERS." Surface Review and Letters 04, no. 02 (April 1997): 361–70. http://dx.doi.org/10.1142/s0218625x97000365.

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When going from the bulk solid to a thin film of nanometer dimensions, the electronic structure becomes discretized in the perpendicular direction. These discrete states, also called thin film states and quantum well states, are clearly distinguished in photoemission experiments as two-dimensional and thickness-dependent modulations of the bulk spectra, although their observation is limited to highly perfect epitaxial systems. The photoemission data are well explained in the framework of a simple model for the electron wave function in a quantum well state. Thin film states become spin-polarized when growing on ferromagnetic substrates. Furthermore, spin-polarized, thickness-dependent modulations at a given energy lead to spin-dependent periodic oscillations of the density of states as a function of thickness, which are found to be responsible for the oscillatory coupling observed in magnetic multilayers.
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Dissertations / Theses on the topic "Discrete Electronic Energy States"

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Gittins, Christopher M. (Christopher Michael). "Electronic structure and electronic-vibrational energy exchange in Rydberg states of calcium monofluoride." Thesis, Massachusetts Institute of Technology, 1995. http://hdl.handle.net/1721.1/32639.

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Szarek, Pawel. "Theoretical Study of Electronic States of Chemical Bonds." 京都大学 (Kyoto University), 2008. http://hdl.handle.net/2433/66212.

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Kyoto University (京都大学)
0048
新制・課程博士
博士(工学)
甲第14161号
工博第2995号
新制||工||1444(附属図書館)
26467
UT51-2008-N478
京都大学大学院工学研究科マイクロエンジニアリング専攻
(主査)教授 立花 明知, 教授 榊 茂好, 教授 木村 健二
学位規則第4条第1項該当
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Coles, Richard A. "Theory of the electronic states of semiconductor heterostructures." Thesis, Durham University, 1999. http://etheses.dur.ac.uk/4495/.

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This thesis is concerned with theoretical calculations of the properties of electronic bound states in semiconductor heterostructures. The complex band structure empirical pseudopotential method (EPM) is used as the foundation of the work. Spin orbit coupling and strain effects (due to lattice mismatch) are included in familiar ways, as is the transfer matrix method, allowing the study of arbitrarily configured heterostructures. These techniques are used to investigate the unusually deep InAs/AlSb conduction band well. The strong possibility of intraband transitions at electro magnetic wavelengths around 1.55µm is predicted, with corresponding enhanced momentum matrix elements and joint density of states over interband transitions. An InAs/GaSb/AlSb asymmetric well is investigated, paying particular attention to the bound states in the vicinity of the InAs/GaSb band overlap. The electron-like states are found to cross with heavy hole and anti-cross with light hole-like states, as a function of heterostructure dimension or applied electrostatic field. This is analogous to the hybridisation of states in the in-plane band structure, except that for zero in-plane wave vector there can be no appreciable hybridisation of electron and heavy hole states. A technique is described that has been developed to extract envelope functions from heterostructure wavefunctions calculated using the realistic complex band structure EPM approach. These envelope functions conform to Burt’s theory (M. G. Burt, J. Phys.: Condens. Matt. 4, 6651 (1992)) in that they are uniquely defined, continuous and smooth over all space. Comparisons with traditional effective mass envelope functions are made. The extracted envelope functions are used to demonstrate conclusively Burt's predictions (M. G. Burt, Superlatt. Mi- crostruct. 17, 335 (1995)) concerning the inadequacy of certain approximations for the calculation of interband dipole matrix elements and charge oscillation. Finally, the issue of k • p operator ordering is convincingly settled, in favour of 'ordered' over 'symmetrised' Hamiltonians, by comparison to EPM calculations, and using EPM derived k • p parameters.
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Gamble, Stephanie Nicole. "Conical Intersections and Avoided Crossings of Electronic Energy Levels." Diss., Virginia Tech, 2021. http://hdl.handle.net/10919/101899.

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We study the unique phenomena which occur in certain systems characterized by the crossing or avoided crossing of two electronic eigenvalues. First, an example problem will be investigated for a given Hamiltonian resulting in a codimension 1 crossing by implementing results by Hagedorn from 1994. Then we perturb the Hamiltonian to study the system for the corresponding avoided crossing by implementing results by Hagedorn and Joye from 1998. The results from these demonstrate the behavior which occurs at a codimension 1 crossing and avoided crossing and illustrates the differences. These solutions may also be used in further studies with Herman-Kluk propagation and more. Secondly, we study codimension 2 crossings by considering a more general type of wave packet. We focus on the case of Schrödinger equation but our methods are general enough to be adapted to other systems with the geometric conditions therein. The motivation comes from the construction of surface hopping algorithms giving an approximation of the solution of a system of Schrödinger equations coupled by a potential admitting a conical intersection, in the spirit of Herman-Kluk approximation (in close relation with frozen/thawed approximations). Our main Theorem gives explicit transition formulas for the profiles when passing through a conical crossing point, including precise computation of the transformation of the phase and its proof is based on a normal form approach.
Doctor of Philosophy
We study energies of molecular systems in which special circumstances occur. In particular, when these energies intersect, or come close to intersecting. These phenomena give rise to unique physics which allows special reactions to occur and are thus of interest to study. We study one example of a more specific type of energy level crossing and avoided crossing, and then consider another type of crossing in a more general setting. We find solutions for these systems to draw our results from.
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Wu, Lu. "STRUCTURES AND ELECTRONIC STATES OF SMALL GROUP 3 METAL CLUSTERS." UKnowledge, 2014. http://uknowledge.uky.edu/chemistry_etds/32.

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Group 3 metal clusters are synthesized by laser vaporization in a pulsed cluster beam source and identified with laser ionization time-of-flight mass spectrometry. The adiabatic ionization energies and vibrational frequencies of these clusters are measured using mass-analyzed threshold ionization (MATI) spectroscopy. Their structures and electronic states are determined by combining the MATI spectra with quantum chemical calculations and spectral simulations. This dissertation focuses on the study of several small molecules, which include LaO2, La2, M2O2, M3O4, M3C2, and La3C2O, where M = Sc, Y, and La. Except for La2, these molecules exhibit strong ionic characters between the metal and oxygen or carbon atoms and can be described as [O-][La2+][O-], [M2+]2[O2-]2, [M8/3+]3[O2-]4, [M2+]3[C3-]2, and [La8/3+]3[C3-]2[O2-]. The interactions between the metal atoms form covalent bonds, which can be described by a triple bond in La2, a two-center two electron bond in M2O2, a three-center one electron bond in M3O4, and a three-center three electron bond in M3C2. In addition, the electron in the non-bonding highest occupied molecular orbital (HOMO) is localized in the La 6s orbital in LaO2 and La3C2O. The ground states of these molecules are all in low electron-spin states with the spin multiplicities of 1 or 2. Although the ground electronic state of LaO2 is a linear structure, the excited quartet state of the molecule is determined to be a bent structure. M2O2 and M3O4 have the planar rhombic and cage-like structures, respectively; whereas M3C2 has a trigonal bipyramid structure. La3C2O is formed by oxygen binding with two La atoms of La3C2. Ionization removes a metal-based (n+1)s electron in all neutral molecules, and the resultant ions have similar geometries to those of the corresponding neutral states. In the case of La2, additional ionization of a La 5d electron is also observed.
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Yang, Juan. "Spectroscopic investigations of the vibrational potential energy surfaces in electronic ground and excited states." Diss., Texas A&M University, 2003. http://hdl.handle.net/1969.1/5900.

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The vibrational potential energy surfaces in electronic ground and excited states of several ring molecules were investigated using several different spectroscopic methods, including far-infrared (IR), Raman, ultraviolet (UV) absorption, fluorescence excitation (FES), and single vibronic level fluorescence (SVLF) spectroscopies. Based on new information obtained from SVLF and millimeter wave spectra, the far-IR spectra of coumaran were reassigned and the one-dimensional ring-puckering potential energy functions for several vibrational states in the S0 ground state were determined. The barrier was found to be 154 cm-1 and the puckering angles to be ± 25°, in good agreement with the millimeter wave barrier of 152 cm-1 and puckering angles of ± 23°. Moreover, the UV absorption and FES spectra of coumaran allowed the one-dimensional ring-puckering potential energy functions in the S1 excited state to be determined. The puckering barrier is 34 cm-1 for the excited state and the puckering angles are ± 14°. Several calculations with different basis sets have been carried out to better understand the unusual vibrational frequencies of cyclopropenone. It was shown that there is strong interaction between the C=O and symmetric C-C stretching vibrations. These results differ quantitatively from a previous normal coordinate calculation and interpretation. The vapor-phase Raman spectrum of 3,7-dioxabicyclo[3.3.0]oct-1,5-ene was analyzed and compared to the predicted spectrum from DFT calculations. The spectrum further shows it has D2h symmetry, in which the skeletons of both rings are planar. The infrared and Raman spectra of vapor-phase and liquid-phase 1,4-benzodioxan and 1,2,3,4-tetrahydronaphthalene were collected and the complete vibrational assignments for both molecules were made. Theoretical calculations predicted the barriers to planarity to be 4809 cm-1 for 1,2,3,4-tetrahydonaphthalene and 4095 cm-1 for 1,4-benzodioxan. The UV absorption, FES, and SVLF spectra of both molecules were recorded and assigned. Both one and two-dimensional potential energy functions of 1,4-benzodioxan for the ring-twisting and ring-bending vibrations were carried out for the S0 and S1(π,π*) states, and these were consistent with the high barriers calculated for both states. The low-frequency spectra of 1,2,3,4-tetrahydronaphthalene in both S0 and S1(π,π*) states were also analyzed.
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Rusz, Ján, Ikuo Nishida, Shunsuke Muto, and Kazuyoshi Tatsumi. "Site-specific electronic configurations of Fe 3d states by energy loss by channeled electrons." AIP publishing, 2010. http://hdl.handle.net/2237/20791.

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Kimura, Akihiro. "General theory of excitation energy transfer in donor-mediator-acceptor systems." American Institite of Physics, 2009. http://hdl.handle.net/2237/12630.

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Pan, Xinhua. "Optical Control and Spectroscopic Studies of Collisional Population Transfer in Molecular Electronic States." Diss., Temple University Libraries, 2017. http://cdm16002.contentdm.oclc.org/cdm/ref/collection/p245801coll10/id/440712.

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Physics
Ph.D.
The quantum interference effects, such as the Autler-Townes (AT) effect and electromagnetically induced transparency (EIT) applied to molecular systems are the focus of this Dissertation in the context of high resolution molecular spectroscopy. We demonstrate that the AT effect can be used to manipulate the spin character of a spin-orbit coupled pair of molecular energy levels serving as a \textit{gateway} between the singlet and triplet electronic states. We demonstrate that the singlet-triplet mixing characters of the \textit{gateway} levels can be controlled by manipulating the coupling laser \textit{E} field amplitude. We observe experimentally the collisional population transfer between electronic states $G^1\Pi_g (v=12, J=21, f)$ and $1^3\Sigma _g^-(v=1, N=21, f)$ of $^7$Li$_2$. We obtain the Stern-Vollmer plot according to the vapor pressure dependence of collisional transfer rate. The triplet fluorescence from the mixed \textit{gateway} levels to the triplet $b^3\Pi_u(v'=1,J'=
Temple University--Theses
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Mitsutake, Ayori, and Yuko Okamoto. "Multidimensional generalized-ensemble algorithms for complex systems." American Institite of Physics, 2009. http://hdl.handle.net/2237/12622.

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Books on the topic "Discrete Electronic Energy States"

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Your guide to electronic information at FERC. Washington, DC: U.S. Dept. of Energy, Federal Energy Regulatory Commission, 2007.

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United States. Dept. of Energy. Office of Audit Services. Audit report: Protection of the Department of Energy's unclassified sensitive electronic information. [Washington, DC]: U.S. Dept. of Energy, Office of Inspector General, 2009.

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State impediments to e-commerce: Consumer protection or veiled protectionism? : hearing before the Subcommittee on Commerce, Trade, and Consumer Protection of the Committee on Energy and Commerce, House of Representatives, One Hundred Seventh Congress, second session, September 26, 2002. Washington: U.S. G.P.O., 2002.

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R, Shad John S. Statement of John S.R. Shad, Chairman of the Securities and Exchange Commission, before the House Subcommittee on Oversight and Investigations of the Committee on Energy and Commerce, concerning EDGAR (Electronic Data Gathering, Analysis, and Retrieval System), March 14, 1985. [Washington, D.C: The Commission, 1985.

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United States. General Accounting Office, ed. Information security: Weaknesses place commerce data and operations at serious risk : statement of Robert F. Dacey, Director, Information Security Issues, before the Subcommittee on Oversight and Investigations, Committee on Energy and Commerce, House of Representatives. Washington, D.C.]: The Office, 2001.

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United States. Congress. House. Committee on Energy and Commerce. Subcommittee on Commerce, Trade, and Consumer Protection. On-line fraud and crime: Are consumers safe? : hearing before the Subcommittee on Commerce, Trade, and Consumer Protection of the Committee on Energy and Commerce, House of Representatives, One Hundred Seventh Congress, first session, May 23, 2001. Washington: U.S. G.P.O., 2001.

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United States. Congress. House. Committee on Energy and Commerce. Subcommittee on Telecommunications and the Internet. Law enforcement access to communication systems in the digital age: Hearing before the Subcommittee on Telecommunications and the Internet of the Committee on Energy and Commerce, House of Representatives, One Hundred Eighth Congress, second session, September 8, 2004. Washington: U.S. G.P.O., 2004.

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Office, General Accounting. Information security: IRS electronic filing systems : report to the Chairman, Committee on Governmental Affairs, U.S. Senate. Washington, D.C. (P.O. Box 37050, Washington 20013): U.S. General Accounting Office, 2001.

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Inslee, Jay. Apollo's fire: Igniting America's clean-energy economy. Washington, DC: Island Press, 2007.

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Bracken, Hendricks, ed. Apollo's fire: Igniting America's clean-energy economy. Washington, DC: Island Press, 2008.

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Book chapters on the topic "Discrete Electronic Energy States"

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Tashpulatov, S. M. "Structure of Essential Spectrum and Discrete Spectrum of the Energy Operator of Five-Electron Systems in the Hubbard Model—Doublet States." In Trends in Mathematics, 275–301. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-49763-7_19.

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Flores, F., and C. Tejedor. "Energy barriers and interface states at heterojunctions." In Electronic Structure of Semiconductor Heterojunctions, 230–48. Dordrecht: Springer Netherlands, 1988. http://dx.doi.org/10.1007/978-94-009-3073-5_25.

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Laane, Jaan. "Vibrational Potential Energy Surfaces of Non-Rigid Molecules in Exited Electronic States." In Structure and Dynamics of Electronic Excited States, 3–35. Berlin, Heidelberg: Springer Berlin Heidelberg, 1999. http://dx.doi.org/10.1007/978-3-642-59855-5_1.

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Khan, Dibyendu, Sankhadip Saha, Shiladitya Saha, and Subhrodipto Basu Choudhury. "Defect Detection in Power Electronic Circuits by Artificial Neural Network Using Discrete Wavelet Analysis." In Advances in Power Systems and Energy Management, 477–85. Singapore: Springer Singapore, 2017. http://dx.doi.org/10.1007/978-981-10-4394-9_47.

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Balducci, Anthony. "EPAct Legislation - The United States Experience of Minimum Efficiency Standards for Induction Motors." In Energy Efficiency Improvements in Electronic Motors and Drives, 378–82. Berlin, Heidelberg: Springer Berlin Heidelberg, 2000. http://dx.doi.org/10.1007/978-3-642-59785-5_37.

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Weitz, Eric, and George Flynn. "Vibrational Energy Flow in the Ground Electronic States of Polyatomic Molecules." In Advances in Chemical Physics, 185–235. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2007. http://dx.doi.org/10.1002/9780470142660.ch8.

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Hoffmann, Mark R., and Kenneth G. Dyall. "Overview: Accurate Description of Low-Lying Electronic States and Potential Energy Surfaces." In ACS Symposium Series, 1–8. Washington, DC: American Chemical Society, 2002. http://dx.doi.org/10.1021/bk-2002-0828.ch001.

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Laane, Jaan. "Vibrational Potential Energy Surfaces of Non-Rigid Molecules in Ground and Excited Electronic States." In Structures and Conformations of Non-Rigid Molecules, 65–98. Dordrecht: Springer Netherlands, 1993. http://dx.doi.org/10.1007/978-94-011-2074-6_4.

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Fujimori, A. "Nature of the Electronic States near the Fermi Level in High-Tc Superconductors: High-Energy Spectroscopic Evidence." In Springer Series in Solid-State Sciences, 300–310. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-83836-1_30.

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Laane, J., J. Zhang, W. Y. Chiang, P. Sagear, and C. M. Cheatham. "Jet-Cooled Fluorescence Excitation Spectra and Carbonyl Wagging Potential Energy Functions of Cyclic Ketones in their Electronic Excited States." In Topics in Molecular Organization and Engineering, 181–201. Dordrecht: Springer Netherlands, 1995. http://dx.doi.org/10.1007/978-94-011-1066-2_7.

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Conference papers on the topic "Discrete Electronic Energy States"

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Miller, C. C., S. Diol, C. A. Schmuttenmaer, J. Cao, D. A. Mantell, Y. Gao, and R. J. D. Miller. "Hot Electron Reaction Dynamics at GaAs(100) Surface Quantum Wells." In International Conference on Ultrafast Phenomena. Washington, D.C.: Optica Publishing Group, 1996. http://dx.doi.org/10.1364/up.1996.thc.3.

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Surface mediated electron transfer is the most ubiquitous of all surface reaction types and forms the basis of electrochemistry and many imaging technologies (photography, xerography). This process also holds great promise as a simple system for efficient solar energy conversion. Providing interfacial charge transfer processes can be made to occur competitively with thermalization dynamics, it should be possible to store energy as chemical potential at hybrid semiconductor/molecular junctions and avoid heat losses in conventional solid state solar cells (and thereby double theoretical efficiency limits). This specific mechanism is referred to as the hot electron model for semiconductor photochemistry [1] (Fig.1) and requires that the electron transfer occur in the strong coupling or adiabatic regime. The degree of electronic coupling between a discrete molecular state adsorbed to the surface and the highly delocalized band states of the single crystal is the key fundamental issue. In addition, the dynamics of interfacial charge transfer have to be quantified relative to the electron thermalization dynamics of field accelerated electrons (≤ 1 eV above the CBM) which are the dominant source of photoinduced hot electrons at semiconductor liquid junctions.
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Zhu, Yicheng, Zhengming Zhao, Bochen Shi, Jiahe Ju, Zhujun Yu, Liqiang Yuan, and Kainan Chen. "Discrete State Event-Driven Framework for Simulation of Switching Transients in Power Electronic Systems." In 2019 IEEE Energy Conversion Congress and Exposition (ECCE). IEEE, 2019. http://dx.doi.org/10.1109/ecce.2019.8912523.

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3

Capasso, F., and J. Faist. "Quantum Cascade Lasers." In Quantum Optoelectronics. Washington, D.C.: Optica Publishing Group, 1995. http://dx.doi.org/10.1364/qo.1995.jwb2.

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The recently demonstrated quantum cascade laser is a fundamentally new semiconductor laser.1-3 It relies on only one type of carrier (unipolar laser) and on quantum jumps of electrons between discrete conduction band energy levels of quantum wells. As such the wavelength can be tailored over a very wide range from the mid-ir (a few microns) to the far-ir (~100 μm) by simply varying layer thicknesses. Two types of quantum cascade lasers will be discussed. In the original structure the relevant intersubband radiative transition is between states centered in different neighboring wells to facilitate population inversion, i.e. the transition is diagonal (Fig. 1). In this design, however, the width of the luminescence transition is relatively broad (FWHM~22 meV) due to the interface roughness since electrons traverse several heterointerfaces in the photon emission process. As a consequence the peak gain is reduced. To circumvent this problem we designed the structure of Fig. 2 where electrons make a vertical radiative transition essentially in the same well. This reduces considerably the width of the gain spectrum (FWHM = 10 meV) and therefore the laser threshold current density. To prevent electron escape in the continuum, which is greatly reduced in the case of the diagonal transition, the superlattice of the digitally graded injector is designed to act as a Bragg reflector for electrons in the higher excited state and to simultaneously ensure swift electron escape from the lower states via a miniband facing the latter (Fig. 2). A crucial feature of both structures is that the lower state of the laser transition is separated by an optical phonon (≈ 30 meV) from the n = 1 state. This strongly enhances the scattering of electrons out of the n = 2 state. The calculated time is τ21 ≃ 0.6 ps which is considerably less than the relaxation time between the n = 3 and n = 2 state (a few ps) thus creating the population inversion condition. Electrons can in turn tunnel out of the n = 1 state in a subpicosecond time to prevent electron build-up.
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Yee, Shannon, Jonathan Malen, Pramod Reddy, Rachel Segalman, and Arun Majumdar. "Thermoelectricity at the Organic-Inorganic Interface." In 2010 14th International Heat Transfer Conference. ASMEDC, 2010. http://dx.doi.org/10.1115/ihtc14-22690.

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Electronic transport in molecular junctions has been studied through measurements of junction thermopower to evaluate the feasibility of thermoelectric (TE) energy generation using organic-inorganic hybrid materials. Energy transport and conversion in these junctions are heavily influenced by transport interactions at the metal-molecule interface. At this interface the discrete molecular orbitals overlap with continuum electronic states in the inorganic electrodes to create unique energy landscapes that cannot be realized in the organic or inorganic components alone. Over the past decade, scanning probe microscopes have been used to study the electronic conductance of single-molecule junctions[1–5]. Recently, we conducted measurements of junction thermopower using a modified scanning tunneling microscope (STM)[6]. Through our investigations, we have determined: (i) how the addition of molecular substituent groups can be used to predictably tune the TE properties of phenylenedithiol (PDT) junctions[7], (ii) how the length, molecular backbone, and end groups affect junction thermopower[8], and (iii) where electronic transport variations originate[9]. Furthermore, we have recently found that large (10 fold) TE enhancement can be achieved by effectively altering a (noble) metal junction using fullerenes (i.e., C60, PCBM, and C70). We associate the enhancement with the alignment of the frontier orbitals of the fullerene to the chemical potential of the inorganic electrodes. We further found that the thermopower can be predictably tuned by varying the work function of the contacts. This yields considerable promise for altering the surface states at interfaces for enhanced electronic and thermal transport. This paper highlights our work using thermopower as a probe for electronic transport, and reports preliminary results of TE conversion in fullerene-metal junctions.
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Glasheen, Wm Michael, Deidre E. Cusack, and Helmar R. Steglich. "Combustor Flame Sensor With High Temperature Electronics." In ASME 1995 International Gas Turbine and Aeroengine Congress and Exposition. American Society of Mechanical Engineers, 1995. http://dx.doi.org/10.1115/95-gt-323.

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A high temperature solid state turbine flame sensor has been developed and is being tested for eventual use as a combustor performance sensor. It directly senses only the flame deep ultraviolet without any response to hot component infrared energy (> 700 nanometers); the dynamic range is large; and the response time is fast enough for combustor control, i.e., less than 200 milliseconds. The sensor electronics operate up to 250°C and some detector performance data has been taken as high as 540°C as described by Cusack et al (1994). The design uses recently available SiC electronic components, other components specially tested for the application, and proprietary techniques of electronic component packaging. Specific experience in packaging turbine engine optical and temperature sensors is necessary for this unique high temperature electronic technology. A test program for discrete components indicates what elements are available for this temperature range and prototype sensor data from both laboratory qualification tests and engine performance tests verify the design.
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Liu, Yang, Hassan Raza, and Timothy S. Fisher. "Simulation of Thermionic Emission From a Quantum Wire Using the Non-Equilibrium Green’s Function Method." In ASME 2004 International Mechanical Engineering Congress and Exposition. ASMEDC, 2004. http://dx.doi.org/10.1115/imece2004-59730.

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Even though the theory of thermionic emission of electrons from bulk metals is well understood, discrete electron energy states exist when material length scales approach one nanometer, and the traditional treatment must be revised. This paper presents a theoretical development of thermionic emission from nanoscale materials. A general expression for the emitted current as a function of field, temperature and work function is established for a quantum wire. The results differ from those of 3-D bulk materials. Simulation of thermionic emission from a quantum wire is achieved with the non-equilibrium Green’s function (NEGF) method, which includes relevant mesocopic physics and has been widely applied to transport problems in nanostructures. The NEGF approach provides a powerful solution to modeling problems when interfacial transport effects between bulk and confined conductors are important. Both the theoretical and simulated results indicate a higher current density and thus higher energy conversion capacity than that of a bulk material with the same work function. Thus the quantum confined materials may provide a method for improving the capacity of direct energy conversion devices and systems.
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Germer, Maxim, Uwe Marschner, and Andreas Richter. "Strain Based Tire Pressure Monitoring Systems (TPMS) With Synchronous Electric Charge Extraction (SECE)." In ASME 2022 Conference on Smart Materials, Adaptive Structures and Intelligent Systems. American Society of Mechanical Engineers, 2022. http://dx.doi.org/10.1115/smasis2022-91168.

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Abstract Energy harvesting (EH) for tire pressure monitoring systems (TPMSs) is a key element to make tire sensors self-sufficient and to raise the features of vehicle tires to a next level. This work studies the commercially available piezoelectric flat transducers M2807-P1, M2807-P2 from SmartMaterials and P878.A1 and P876.SP1 from PI Ceramics to use the tire strain and to generate electrical energy inside the tire. An equivalent electromechanical network with the strain as input signal is derived and used to predict the voltage at the harvester output. A 220 μF capacitor is connected to store the harvested energy. In contrast to the common use of full-wave rectifiers, this work uses a synchronous electric charge extraction (SECE) circuit for efficient energy transfer. An electronic breaker (EB) serves as a simple implementation with discrete components. Although an EB provides only an efficiency of 40 %, it increases the amount of transferred energy significantly compared to state-of-the-art TPMS systems. Experimental results show an increase of the harvested energy of more than 200 % compared to former works.
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Campo, Antonio, Oronzio Manca, and Biagio Morrone. "Numerical Simulation of Free Convection Heat Transfer From Localized Discrete Heat Sources in a Vertical Channel." In ASME 1996 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 1996. http://dx.doi.org/10.1115/imece1996-0078.

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Abstract This paper addresses the problem of natural convection cooled channels heated with flush-mounted discrete heat sources: this configuration is more realistic for the modelization of the cooling of electronic devices. The two-dimensional, laminar and steady-state problem is investigated numerically by the full elliptic Navier-Stokes and energy equations in a composite domain. The computational domain is I-shaped and is made by the channel and two rectangular reservoirs. The thermal behavior of a channel symmetrically heated by a single flush-mounted strip as function of the strip position with respect to the inlet section is investigated. Wall temperature profiles as well as the velocity and local Nusselt numbers as functions of the nondimensional coordinates are shown for channels heated by five strips per each wall. The analysis is carried out in the aspect ratio, height of plates/channel gap, and the Rayleigh numbers in the ranges 1–10 and 103–105, respectively. The wall temperature profiles show useful indications on the correct position of the heated strips with respect to the channel inlet in order to attain higher heat transfer rate coefficients. The velocity profiles at the inlet and exit sections are strongly influenced by the Rayleigh numbers. The local Nusselt values show that, for different values of the aspect ratio, the channels behave as uniformly heated walls at lower Rayleigh numbers. A correlation for the average Nusselt number in terms of Rayleigh channel number is given.
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Sitek, Anna, and Andrei Manolescu. "Low-energy electronic states in tubular wires." In 2023 23rd International Conference on Transparent Optical Networks (ICTON). IEEE, 2023. http://dx.doi.org/10.1109/icton59386.2023.10207280.

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Kano, S., K. Maeda, D. Tanaka, T. Teranishi, L. W. Smith, C. G. Smith, and Y. Majima. "Discrete Energy Levels in Synthesized Au Nanoparticle by Chemically Assembled Single-Electron Transistors." In 2012 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2012. http://dx.doi.org/10.7567/ssdm.2012.g-2-1.

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Reports on the topic "Discrete Electronic Energy States"

1

Ghatikar, Girish, Iris Cheung, Steven Lanzisera, Bob Wardell, Manoj Deshpande, and Jayraj Ugarkar. Miscellaneous and Electronic Loads Energy Efficiency Opportunities for Commercial Buildings: A Collaborative Study by the United States and India. Office of Scientific and Technical Information (OSTI), April 2013. http://dx.doi.org/10.2172/1170747.

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