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Relevant bibliographies by topics / Dirac semimetallic

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Journal articles

Academic literature on the topic 'Dirac semimetallic'

Author: Grafiati

Published: 6 September 2023

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Journal articles on the topic "Dirac semimetallic"

1

Deily Nazar, N., T. Vazifehshenas, M. R. Ebrahimi, and F. M. Peeters. "Strong anisotropic optical properties of 8-Pmmn borophene: a many-body perturbation study." Physical Chemistry Chemical Physics 23, no. 30 (2021): 16417–22. http://dx.doi.org/10.1039/d1cp01910d.

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2

Zhang, Jin, Artem R. Oganov, Xinfeng Li, Huafeng Dong, and Qingfeng Zeng. "Novel compounds in the Zr–O system, their crystal structures and mechanical properties." Physical Chemistry Chemical Physics 17, no. 26 (2015): 17301–10. http://dx.doi.org/10.1039/c5cp02252e.

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3

Kong, Weixiang, Xiaoliang Xiao, Wangping Xu, et al. "The Dirac cone in two-dimensional tetragonal silicon carbides: a ring coupling mechanism." Nanoscale 13, no. 43 (2021): 18267–72. http://dx.doi.org/10.1039/d1nr04586e.

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4

Wu, Haiping, Yan Qian, Zhengwei Du, Renzhu Zhu, Erjun Kan, and Kaiming Deng. "Prediction of another semimetallic silicene allotrope with Dirac fermions." Physics Letters A 381, no. 44 (2017): 3754–59. http://dx.doi.org/10.1016/j.physleta.2017.09.049.

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5

Wang, Shuaiwei, Donghai Wu, Baocheng Yang, Eli Ruckenstein, and Houyang Chen. "Semimetallic carbon honeycombs: new three-dimensional graphene allotropes with Dirac cones." Nanoscale 10, no. 6 (2018): 2748–54. http://dx.doi.org/10.1039/c7nr07824b.

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6

Penazzi, Gabriele, Peter Deák, Bálint Aradi, et al. "TiO2 Nanowires as a Wide Bandgap Dirac Material: a numerical study of impurity scattering and Anderson disorder." MRS Proceedings 1659 (2014): 187–91. http://dx.doi.org/10.1557/opl.2014.150.

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ABSTRACTDirac materials are characterized by exceptional mobility, orders of magnitude higher than any semiconductor, due to the massless pseudorelativistic nature of the Dirac fermions. These systems being semimetallic, the lack of a genuine band-gap poses a serious limitation to their possible applications in electronics. We recently demonstrated that thin TiO2 nanowires can exhibit 1D Dirac states similar to metallic carbon nanotubes, with the crucial difference that these states lie inside the conduction band in proximity of a wide band gap. We analyze the robustness of the Dirac states respect to an Anderson disorder model and substitutional impurity and compare to different one dimensional systems. The results suggest that thin anatase TiO2 nanowires can be a promising candidate material for switching devices.

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7

Zhang, Wei, Changchun Chai, Qingyang Fan, et al. "Semimetallic 2D Alkynyl Carbon Materials with Distorted Type I Dirac Cones." Journal of Physical Chemistry C 125, no. 32 (2021): 18022–30. http://dx.doi.org/10.1021/acs.jpcc.1c04993.

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8

Bafekry, A., M. Faraji, N. N. Hieu, et al. "Two-dimensional Dirac half-metal in porous carbon nitride C₆N₇ monolayer via atomic doping." Nanotechnology 33, no. 7 (2021): 075707. http://dx.doi.org/10.1088/1361-6528/ac31e7.

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Abstract Motivated by the recent experimental discovery of C6N7 monolayer (Zhao et al 2021 Science Bulletin 66, 1764), we show that C6N7 monolayer co-doped with C atom is a Dirac half-metal by employing first-principle density functional theory calculations. The structural, mechanical, electronic and magnetic properties of the co-doped C6N7 are investigated by both the PBE and HSE06 functionals. Pristine C6N7 monolayer is a semiconductor with almost isotropic electronic dispersion around the Γ point. As the doping of the C6N7 takes place, the substitution of an N atom with a C atom transforms the monolayer into a dilute magnetic semiconductor, with the spin-up channel showing a band gap of 2.3 eV, while the spin-down channel exhibits a semimetallic phase with multiple Dirac points. The thermodynamic stability of the system is also checked out via AIMD simulations, showing the monolayer to be free of distortion at 500 K. The emergence of Dirac half-metal in carbon nitride monolayer via atomic doping reveals an exciting material platform for designing novel nanoelectronics and spintronics devices.

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9

Baidak, Semyon T., and Alexey V. Lukoyanov. "Semimetallic, Half-Metallic, Semiconducting, and Metallic States in Gd-Sb Compounds." International Journal of Molecular Sciences 24, no. 10 (2023): 8778. http://dx.doi.org/10.3390/ijms24108778.

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The electronic and band structures of the Gd- and Sb-based intermetallic materials have been explored using the theoretical ab initio approach, accounting for strong electron correlations of the Gd-4f electrons. Some of these compounds are being actively investigated because of topological features in these quantum materials. Five compounds were investigated theoretically in this work to demonstrate the variety of electronic properties in the Gd-Sb-based family: GdSb, GdNiSb, Gd4Sb3, GdSbS2O, and GdSb2. The GdSb compound is a semimetal with the topological nonsymmetric electron pocket along the high-symmetry points Γ–X–W, and hole pockets along the L–Γ–X path. Our calculations show that the addition of nickel to the system results in the energy gap, and we obtained a semiconductor with indirect gap of 0.38 eV for the GdNiSb intermetallic compound. However, a quite different electronic structure has been found in the chemical composition Gd4Sb3; this compound is a half-metal with the energy gap of 0.67 eV only in the minority spin projection. The molecular GdSbS2O compound with S and O in it is found to be a semiconductor with a small indirect gap. The GdSb2 intermetallic compound is found to have a metallic state in the electronic structure; remarkably, the band structure of GdSb2 has a Dirac-cone-like feature near the Fermi energy between high-symmetry points Г and S, and these two Dirac cones are split by spin-orbit coupling. Thus, studying the electronic and band structure of several reported and new Gd-Sb compounds revealed a variety of the semimetallic, half-metallic, semiconducting, or metallic states, as well topological features in some of them. The latter can lead to outstanding transport and magnetic properties, such as a large magnetoresistance, which makes Gd-Sb-based materials very promising for applications.

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10

Lin, Yuxuan, Qiong Ma, Pin-Chun Shen, et al. "Asymmetric hot-carrier thermalization and broadband photoresponse in graphene-2D semiconductor lateral heterojunctions." Science Advances 5, no. 6 (2019): eaav1493. http://dx.doi.org/10.1126/sciadv.aav1493.

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The massless Dirac electron transport in graphene has led to a variety of unique light-matter interaction phenomena, which promise many novel optoelectronic applications. Most of the effects are only accessible by breaking the spatial symmetry, through introducing edges, p-n junctions, or heterogeneous interfaces. The recent development of direct synthesis of lateral heterostructures offers new opportunities to achieve the desired asymmetry. As a proof of concept, we study the photothermoelectric effect in an asymmetric lateral heterojunction between the Dirac semimetallic monolayer graphene and the parabolic semiconducting monolayer MoS2. Very different hot-carrier cooling mechanisms on the graphene and the MoS2 sides allow us to resolve the asymmetric thermalization pathways of photoinduced hot carriers spatially with electrostatic gate tunability. We also demonstrate the potential of graphene-2D semiconductor lateral heterojunctions as broadband infrared photodetectors. The proposed structure shows an extreme in-plane asymmetry and provides a new platform to study light-matter interactions in low-dimensional systems.

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