Academic literature on the topic 'Dirac semimetallic'

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Journal articles on the topic "Dirac semimetallic"

1

Deily Nazar, N., T. Vazifehshenas, M. R. Ebrahimi, and F. M. Peeters. "Strong anisotropic optical properties of 8-Pmmn borophene: a many-body perturbation study." Physical Chemistry Chemical Physics 23, no. 30 (2021): 16417–22. http://dx.doi.org/10.1039/d1cp01910d.

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2

Zhang, Jin, Artem R. Oganov, Xinfeng Li, Huafeng Dong, and Qingfeng Zeng. "Novel compounds in the Zr–O system, their crystal structures and mechanical properties." Physical Chemistry Chemical Physics 17, no. 26 (2015): 17301–10. http://dx.doi.org/10.1039/c5cp02252e.

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3

Kong, Weixiang, Xiaoliang Xiao, Wangping Xu, et al. "The Dirac cone in two-dimensional tetragonal silicon carbides: a ring coupling mechanism." Nanoscale 13, no. 43 (2021): 18267–72. http://dx.doi.org/10.1039/d1nr04586e.

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4

Wu, Haiping, Yan Qian, Zhengwei Du, Renzhu Zhu, Erjun Kan, and Kaiming Deng. "Prediction of another semimetallic silicene allotrope with Dirac fermions." Physics Letters A 381, no. 44 (2017): 3754–59. http://dx.doi.org/10.1016/j.physleta.2017.09.049.

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5

Wang, Shuaiwei, Donghai Wu, Baocheng Yang, Eli Ruckenstein, and Houyang Chen. "Semimetallic carbon honeycombs: new three-dimensional graphene allotropes with Dirac cones." Nanoscale 10, no. 6 (2018): 2748–54. http://dx.doi.org/10.1039/c7nr07824b.

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6

Penazzi, Gabriele, Peter Deák, Bálint Aradi, et al. "TiO2 Nanowires as a Wide Bandgap Dirac Material: a numerical study of impurity scattering and Anderson disorder." MRS Proceedings 1659 (2014): 187–91. http://dx.doi.org/10.1557/opl.2014.150.

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ABSTRACTDirac materials are characterized by exceptional mobility, orders of magnitude higher than any semiconductor, due to the massless pseudorelativistic nature of the Dirac fermions. These systems being semimetallic, the lack of a genuine band-gap poses a serious limitation to their possible applications in electronics. We recently demonstrated that thin TiO2 nanowires can exhibit 1D Dirac states similar to metallic carbon nanotubes, with the crucial difference that these states lie inside the conduction band in proximity of a wide band gap. We analyze the robustness of the Dirac states re
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7

Zhang, Wei, Changchun Chai, Qingyang Fan, et al. "Semimetallic 2D Alkynyl Carbon Materials with Distorted Type I Dirac Cones." Journal of Physical Chemistry C 125, no. 32 (2021): 18022–30. http://dx.doi.org/10.1021/acs.jpcc.1c04993.

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8

Bafekry, A., M. Faraji, N. N. Hieu, et al. "Two-dimensional Dirac half-metal in porous carbon nitride C6N7 monolayer via atomic doping." Nanotechnology 33, no. 7 (2021): 075707. http://dx.doi.org/10.1088/1361-6528/ac31e7.

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Abstract Motivated by the recent experimental discovery of C6N7 monolayer (Zhao et al 2021 Science Bulletin 66, 1764), we show that C6N7 monolayer co-doped with C atom is a Dirac half-metal by employing first-principle density functional theory calculations. The structural, mechanical, electronic and magnetic properties of the co-doped C6N7 are investigated by both the PBE and HSE06 functionals. Pristine C6N7 monolayer is a semiconductor with almost isotropic electronic dispersion around the Γ point. As the doping of the C6N7 takes place, the substitution of an N atom with a C atom transforms
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9

Baidak, Semyon T., and Alexey V. Lukoyanov. "Semimetallic, Half-Metallic, Semiconducting, and Metallic States in Gd-Sb Compounds." International Journal of Molecular Sciences 24, no. 10 (2023): 8778. http://dx.doi.org/10.3390/ijms24108778.

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The electronic and band structures of the Gd- and Sb-based intermetallic materials have been explored using the theoretical ab initio approach, accounting for strong electron correlations of the Gd-4f electrons. Some of these compounds are being actively investigated because of topological features in these quantum materials. Five compounds were investigated theoretically in this work to demonstrate the variety of electronic properties in the Gd-Sb-based family: GdSb, GdNiSb, Gd4Sb3, GdSbS2O, and GdSb2. The GdSb compound is a semimetal with the topological nonsymmetric electron pocket along th
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10

Lin, Yuxuan, Qiong Ma, Pin-Chun Shen, et al. "Asymmetric hot-carrier thermalization and broadband photoresponse in graphene-2D semiconductor lateral heterojunctions." Science Advances 5, no. 6 (2019): eaav1493. http://dx.doi.org/10.1126/sciadv.aav1493.

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The massless Dirac electron transport in graphene has led to a variety of unique light-matter interaction phenomena, which promise many novel optoelectronic applications. Most of the effects are only accessible by breaking the spatial symmetry, through introducing edges, p-n junctions, or heterogeneous interfaces. The recent development of direct synthesis of lateral heterostructures offers new opportunities to achieve the desired asymmetry. As a proof of concept, we study the photothermoelectric effect in an asymmetric lateral heterojunction between the Dirac semimetallic monolayer graphene a
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