Journal articles: 'Diodes'

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Zhou, Shi Yuan, Kai Zhang, Dinguo Xiao, Chun Guang Xu, and Bo Yang. "Application of Silicon Carbide Diode in Ultrasound High Voltage Pulse Protection Circuit." Applied Mechanics and Materials 290 (February 2013): 115–19. http://dx.doi.org/10.4028/www.scientific.net/amm.290.115.

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SiC diode (Silicon Carbide Diode) is a newly commercial available Schottky barrier diode with zero reverse-recovery-time, which is a perfect candidate for fabricating high voltage pulse protection circuit in ultrasonic transceiver system. With SiC diode’s high performance, the circuit can deliver 400 volts or higher voltage protection level, which is not an easy job for other kind of diodes. In this article, the theory of diode-bridge protection circuit is briefly discussed, and a SiC diode-bridge protection circuit was fabricated, and some experiments has been done to verify the feasibility of using SiC diodes in diode-bridge protection circuit.

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Afanasyev, Alexey V., Boris V. Ivanov, Vladimir A. Ilyin, Alexey F. Kardo-Sysoev, Maria A. Kuznetsova, and Victor V. Luchinin. "Superfast Drift Step Recovery Diodes (DSRDs) and Vacuum Field Emission Diodes Based on 4H-SiC." Materials Science Forum 740-742 (January 2013): 1010–13. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.1010.

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This paper presents the results of research and development of two types diode structures based on wide bandgap 4H-SiC: drift step recovery diodes (DSRDs) and field emission diodes (FED). Diodes’ structure and manufacturing methods are reviewed. Diode’s characteristics were obtained (static current-voltage characteristics and capacitor-voltage characteristic, switching properties’ characteristics for DSRDs). Field emission 4H-SiC structures illustrated high (≥102 А/сm2) current densities at electric field intensity of approximately 10V/um. 4H-SiC DSRDs in the generator structure with a single oscillating contour allowed to form sub nanosecond impulses at a load 50 Ohm and 1,5-2kV amplitude for a single diode (current density at V=2kV J= 4•103 А/сm2),what is significantly higher than similar DSRD’s parameters obtained for silicon.

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Salman, RK. "Research note: Light emitting diodes as solar power resources." Lighting Research & Technology 51, no. 3 (March 19, 2018): 476–83. http://dx.doi.org/10.1177/1477153518764211.

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This paper investigates the possibility of recycling light emitting diodes from damaged electronic devices, and using them in a similar way to photovoltaic cells in order to reduce environmental pollution. The study used a number of tests with a variety of different parameters for measuring the capability for light emitting diodes to harvest the sun’s rays and to convert them into a useful form of electrical power. The different configurations involved variations of light emitting diode wavelength and number, as well as the connection types between the light emitting diodes (series and parallel) and the angle of incidence of the sun’s rays to the light emitting diode’s base. The results showed promising voltage data for parallel-connected light emitting diodes of lemon (yellow-green) and green colour. The variations in voltage produced by tilting the light emitting diode’s base exhibited similar behaviour to that seen in solar panels. The power that was harvested from the light emitting diodes was extremely low, but the voltage gains showed promising trends that could be employed in useful applications. Hence, light emitting diodes could be re-used to reduce environmental pollution and thus to contribute towards environmental enhancement.

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Bumai, Yurii, Aleh Vaskou, and Valerii Kononenko. "Measurement and Analysis of Thermal Parameters and Efficiency of Laser Heterostructures and Light-Emitting Diodes." Metrology and Measurement Systems 17, no. 1 (January 1, 2010): 39–45. http://dx.doi.org/10.2478/v10178-010-0004-x.

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Measurement and Analysis of Thermal Parameters and Efficiency of Laser Heterostructures and Light-Emitting DiodesA thermal resistance characterization of semiconductor quantum-well heterolasers in the AlGaInAs-AlGaAs system (λst≈ 0.8 μm), GaSb-based laser diodes (λst≈ 2 μm), and power GaN light-emitting diodes (visible spectral region) was performed. The characterization consists in investigations of transient electrical processes in the diode sources under heating by direct current. The time dependence of the heating temperature of the active region of a source ΔT(t), calculated from direct bias change, is analyzed using a thermalRTCTequivalent circuit (the Foster and Cauer models), whereRTis the thermal resistance andCTis the heat capacity of the source elements and external heat sink. By the developed method, thermal resistances of internal elements of the heterolasers and light-emitting diodes are determined. The dominant contribution of a die attach layer to the internal thermal resistance of both heterolaser sources and light-emitting diodes is observed. Based on the performed thermal characterization, the dependence of the optical power efficiency on current for the laser diodes is determined.

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5

Min, Seong-Ji, Michael A. Schweitz, Ngoc Thi Nguyen, and Sang-Mo Koo. "Comparison of Temperature Sensing Performance of 4H-SiC Schottky Barrier Diodes, Junction Barrier Schottky Diodes, and PiN Diodes." Journal of Nanoscience and Nanotechnology 21, no. 3 (March 1, 2021): 2001–4. http://dx.doi.org/10.1166/jnn.2021.18934.

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We present a comparison between the thermal sensing behaviors of 4H-SiC Schottky barrier diodes, junction barrier Schottky diodes, and PiN diodes in a temperature range from 293 K to 573 K. The thermal sensitivity of the devices was calculated from the slope of the forward voltage versus temperature plot. At a forward current of 10 μA, the PiN diode presented the highest sensitivity peak (4.11 mV K−1), compared to the peaks of the junction barrier Schottky diode and the Schottky barrier diode (2.1 mV K−1 and 1.9 mV K−1, respectively). The minimum temperature errors of the PiN and junction barrier Schottky diodes were 0.365 K and 0.565 K, respectively, for a forward current of 80 μA±10 μA. The corresponding value for the Schottky barrier diode was 0.985 K for a forward current of 150 μA±10 μA. In contrast to Schottky diodes, the PiN diode presents a lower increase in saturation current with temperature. Therefore, the nonlinear contribution of the saturation current with respect to the forward current is negligible; this contributes to the higher sensitivity of the PiN diode, allowing for the design and fabrication of highly linear sensors that can operate in a wider temperature range than the other two diode types.

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Weikle, Robert M., S. Nadri, C. M. Moore, N. D. Sauber, L. Xie, M. E. Cyberey, N. Scott Barker, A. W. Lichtenberger, and M. Zebarjadi. "Thermal Characterization of Quasi-Vertical GaAs Schottky Diodes Integrated on Silicon Using Thermoreflectance and Electrical Transient Measurements." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2019, DPC (January 1, 2019): 001293–310. http://dx.doi.org/10.4071/2380-4491-2019-dpc-presentation_tha3_009.

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Thermal management and design have been understood, for many years, as critical factors in the implementation of submillimeter-wave Schottky-diode-based circuits and instruments. Removal of heat is particularly important for frequency multipliers, as these circuits generally exhibit low-to-modest conversion efficiencies, and are usually driven with high-power sources to achieve usable output power in the submillimeter-wave region of the spectrum. Elevated diode junction temperature due to inadequate heat sinking is known to degrade performance, accelerate aging effects (for example, due to electromigration, ohmic contact deterioration, or thermally-induced stress), and can ultimately lead to device failure. The relatively-low thermal conductivity of GaAs (the predominant material technology for submillimeter-wave diodes), coupled with restrictions on diode anode size and geometry needed to minimize parasitics and achieve the device impedances required for high-frequency operation, present significant challenges and trade-offs between electrical and thermal designs of these devices. Recognition that heating is a major factor limiting efficiency and output power has prompted a number of approaches to mitigate excessive temperature rise in the junction of planar Schottky diodes, including the use of AlN or diamond as low-loss substrates that act as heat spreaders. A new diode topology, based on a quasi-vertical geometry that is realized through heterogeneous integration of GaAs with high-resistivity silicon, was recently developed at the University of Virginia for submillimeter-wave applications. Unlike planar diodes, the device structure of the quasi-vertical diode consists of a metal contact that underlies the diode's anode and epitaxial mesa, thus providing a large-area ohmic cathode contact that also serves as an integrated heat sink. Measurement of high-efficiency multipliers based on this technology suggest the quasi-vertical architecture provides an effective approach for heat removal and thermal management in Schottky diodes. This paper presents the first results reporting thermal performances of terahertz quasi-vertical GaAs Schottky diodes integrated on silicon. The devices are characterized using a thermoreflectance measurement technique, a method based on the change in refractive index, and therefore surface reflectivity, with changes in temperature. Heating and cooling temperature profiles and 2-D temperature maps are obtained for 3.5 micron and 5.5 micron diameter diodes. From these measurements, the device thermal resistances, junction temperatures, and thermal time-constants are extracted. Equivalent thermal circuit and finite element models are developed to study the device geometry, and extract material thermal parameters. The devices are also characterized using an electrical transient method, and the temperature and cooling transients found from this technique are found to be comparable to those obtained from thermoreflectance measurements. The quasi-vertical diodes studied in this work are shown to demonstrate a faster transient thermal response compared to flip-chip bonded terahertz diodes reported in the literature.

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7

Bayer, Christoph Friedrich, Eberhard Bär, Birgit Kallinger, and Patrick Berwian. "Thermal Simulation of Paralleled SiC PiN Diodes in a Module Designed for 6.5 kV/1 kA." Materials Science Forum 821-823 (June 2015): 616–19. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.616.

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This work shows thermal simulations of a package of 48/96 high-voltage (6.5 kV/1 kA) PiN diodes. A temperature dependent heat generation for a forward voltage of 3.6 V with a realistic heat generating volume in the diode of (2.7x2.7x0.01) mm3 was used. The thermal coupling of two diodes was determined to be less than 1 % for a distance between the diodes of 10 mm. The temperature distribution for the entire module has been studied for two different ceramic insulating materials, AlN and Al2O3, as well as for two numbers of diodes, 48 and 96. This led to a maximum temperature of 106 °C/118 °C (AlN, 48/96 diodes) and 123 °C/144 °C (Al2O3, 48/96 diodes). Assuming a constant applied voltage, a variance of ±0.5 V of the characteristic curve (forward voltage versus current) due to variations in the production process was considered fork single diodes. For a shift of +0.5 V for a single diode, the maximum temperature difference to the cooler temperature becomes approximately twice the original difference. Additionally, the operation under constant current (7.1 A, 10.2 A, 14.2 A) was studied including single diode failure. For single diode failure, the resulting change of the maximum temperature would be less than 3 %.

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Son, Minoh, and Changkun Park. "Cell-Based ESD Diodes with a Zigzag-Shaped Layout to Enhance the ESD Survival Level." Journal of Circuits, Systems and Computers 26, no. 02 (November 3, 2016): 1750023. http://dx.doi.org/10.1142/s0218126617500232.

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In this study, we propose cell-based diodes which are laid out with a zigzag shape as electrostatic discharge (ESD) protection elements to enhance the ESD survival level of the diodes. Generally, diodes are regarded as simple ESD protection devices in integrated circuits. During ESD events, the P–N junction of the ESD diode acts as a thermal source. In this study, we investigate a distributed layout method which relies on a cell-based ESD diode to prevent an excessive increase in the temperature at the P–N junction. However, although the distributed layout enhances the ESD survival levels of the ESD diode, the required area increases compared that of a typical layout. Thus, we propose a zigzag layout technique for the cell-based diode to reduce the area and obtain a high ESD survival level. To verify the feasibility of the zigzag layout techniques for cell-based diodes, we designed ESD diodes using 110[Formula: see text]nm RF CMOS technology. The experimental results successfully demonstrate the feasibility of the proposed method.

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Wang, Heng, Gaurav Jayaswal, Geetanjali Deokar, John Stearns, Pedro M. F. J. Costa, Garret Moddel, and Atif Shamim. "CVD-Grown Monolayer Graphene-Based Geometric Diode for THz Rectennas." Nanomaterials 11, no. 8 (August 2, 2021): 1986. http://dx.doi.org/10.3390/nano11081986.

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For THz rectennas, ultra-fast diodes are required. While the metal–insulator–metal (MIM) diode has been investigated in recent years, it suffers from large resistance and capacitance, as well as a low cut-off frequency. Alternatively, a geometric diode can be used, which is more suitable due to its planar structure. However, there is only one report of a THz geometric diode based on a monolayer graphene. It is based on exfoliated graphene, and thus, it is not suitable for mass production. In this work, we demonstrate chemical vapor deposition (CVD)-grown monolayer graphene based geometric diodes, which are mass-producible. The diode’s performance has been studied experimentally by varying the neck widths from 250–50 nm, the latter being the smallest reported neck width for a graphene geometric diode. It was observed that by decreasing the neck widths, the diode parameters such as asymmetry, nonlinearity, zero-bias resistance, and responsivity increased within the range studied. For the 50 nm neck width diode, the asymmetry ratio was 1.40 for an applied voltage ranging from −2 V to 2 V, and the zero-bias responsivity was 0.0628 A/W. The performance of the diode was also verified through particle-in-cell Monte Carlo simulations, which showed that the simulated current-voltage characteristics were consistent with our experimental results.

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Liu, Yang, Bo Zhang, Yinian Feng, Xiaolin Lv, Dongfeng Ji, Zhongqian Niu, Yilin Yang, Xiangyang Zhao, and Yong Fan. "Development of 340-GHz Transceiver Front End Based on GaAs Monolithic Integration Technology for THz Active Imaging Array." Applied Sciences 10, no. 21 (November 9, 2020): 7924. http://dx.doi.org/10.3390/app10217924.

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Frequency multipliers and mixers based on Schottky barrier diodes (SBDs) are widely used in terahertz (THz) imaging applications. However, they still face obstacles, such as poor performance consistency caused by discrete flip-chip diodes, as well as low efficiency and large receiving noise temperature. It is very hard to meet the requirement of multiple channels in THz imaging array. In order to solve this problem, 12-μm-thick gallium arsenide (GaAs) monolithic integrated technology was adopted. In the process, the diode chip shared the same GaAs substrate with the transmission line, and the diode’s pads were seamlessly connected to the transmission line without using silver glue. A three-dimensional (3D) electromagnetic (EM) model of the diode chip was established in Ansys High Frequency Structure Simulator (HFSS) to accurately characterize the parasitic parameters. Based on the model, by quantitatively analyzing the influence of the surface channel width and the diode anode junction area on the best efficiency, the final parameters and dimensions of the diode were further optimized and determined. Finally, three 0.34 THz triplers and subharmonic mixers (SHMs) were manufactured, assembled, and measured for demonstration, all of which comprised a waveguide housing, a GaAs circuit integrated with diodes, and other external connectors. Experimental results show that all the triplers and SHMs had great performance consistency. Typically, when the input power was 100 mW, the output power of the THz tripler was greater than 1 mW in the frequency range of 324 GHz to 352 GHz, and a peak efficiency of 6.8% was achieved at 338 GHz. The THz SHM exhibited quite a low double sideband (DSB) noise temperature of 900~1500 K and a DSB conversion loss of 6.9~9 dB over the frequency range of 325~352 GHz. It is indicated that the GaAs monolithic integrated process, diodes modeling, and circuits simulation method in this paper provide an effective way to design THz frequency multiplier and mixer circuits.

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11

Kumar, Umesh. "A Detailed Analytical Study of Non-Linear Semiconductor Device Modelling." Active and Passive Electronic Components 18, no. 4 (1995): 211–45. http://dx.doi.org/10.1155/1995/59312.

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This paper presents a detailed analytical study of Gunn, SCR, and p-n junction and of the physical processes that occur inside. Based on the properties of these devices, models for Gunn, SCR, and p-n junction diode have been developed. The results of computer simulated examples have been presented in each case. The non-linear lumped model for Gunn is a unified model as it describes the diffusion effects as the-domain traves from cathode to anode. An additional feature of this model is that it describes the domain extinction and nucleation phenomena in Gunn dioder with the help of a simple timing circuit. The non-linear lumped model for SCR is general and is valid under any mode of operation in any circuit environment. The memristive circuit model for p-n junction diodes is capable of simulating realistically the diode’s dynamic behavior under reverse, forward and sinusiodal operating modes. The model uses memristor, the charge-controlled resistor to mimic various second-order effects due to conductivity modulation. It is found that both storage time and fall time of the diode can be accurately predicted.

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12

Liu, Hai Rui, and Jun Sheng Yu. "Characterization of Metal-Semiconductor Schottky Diodes and Application on THz Detection." Advanced Materials Research 683 (April 2013): 729–32. http://dx.doi.org/10.4028/www.scientific.net/amr.683.729.

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This paper presents a kind of air-bridged GaAs Schottky diodes which offer ultra low parasitic capacitance and series resistance in millimeter and THz wavelength. The Schottky barrier diodes have several advantages when used as millimeter wave and terahertz video, or power detectors. These include their fast time response, room temperature operation, simple structure and low cost. This paper describes the characterization of the metal-semiconductor Schottky diodes including principle, diode structure, non-linear voltage-current characteristic and signal-rectifying performance. For application, a quasi-optical THz detector was made by using the proposed Schottky diodes. It utilized a hyper hemispherical silicon lens to coupleand THz radiation to the diodes by integrating on a broadband planar bow-tie antenna. The measurement results of the Schottky diode based detector show a good room temperature performance.

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Stankovic, Koviljka, Milos Vujisic, and Edin Dolicanin. "Reliability of semiconductor and gas-filled diodes for over-voltage protection exposed to ionizing radiation." Nuclear Technology and Radiation Protection 24, no. 2 (2009): 132–37. http://dx.doi.org/10.2298/ntrp0902132s.

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The wide-spread use of semiconductor and gas-filled diodes for non-linear over-voltage protection results in a variety of possible working conditions. It is therefore essential to have a thorough insight into their reliability in exploitation environments which imply exposure to ionizing radiation. The aim of this paper is to investigate the influence of irradiation on over-voltage diode characteristics by exposing the diodes to californium-252 combined neutron/gamma radiation field. The irradiation of semiconductor over-voltage diodes causes severe degradation of their protection characteristics. On the other hand, gas-filled over-voltage diodes exhibit a temporal improvement of performance. The results are presented with the accompanying theoretical interpretations of the observed changes in over-voltage diode behaviour, based on the interaction of radiation with materials constituting the diodes.

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Dang, Hongmei, Esther Ososanya, and Nian Zhang. "Comparison of electrical characteristics of Schottky junctions based on CdS nanowires and thin film." Nanotechnology 33, no. 21 (March 4, 2022): 215707. http://dx.doi.org/10.1088/1361-6528/ac51eb.

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Abstract CdS nanowires and film Schottky diodes are fabricated and diode properties are compared. Effect of SnO2 on CdS film diode properties is investigated. CdS film/Au on 100 nm SnO2 substrate demonstrates like-resistor characteristics and increase in SnO2 thickness corrects resistor behavior, however the effective reverse saturation current density J o is significantly high and shunt resistance are considerably low, implying that SnO2 slightly prevents impurities migration from CdS films into ITO but cause additional issues. Thickness of CdS film on diode properties is further investigated and increasing CdS film thickness improved J o by one order of magnitude, however shunt resistance is obviously low, suggesting intrinsic issues in CdS film. 100 nm CdS nanowire/Au diodes reduce J o by three orders of magnitude in the dark and two orders of magnitude in the light respectively and their shunt resistance is significantly enhanced by 70 times when comparing with those of the CdS film diodes. The wide difference can be attributed to the fact that CdS nanowires overcome intrinsic issues in CdS film and thus demonstrate significantly well- defined diode behavior. Simulation found that CdS nanowire diodes have low compensating acceptor type traps and interface state density of 5.0 × 109 cm−2, indicating that interface recombination is not a dominated current transport mechanism in the nanowire diodes. CdS film diodes are simulated with acceptor traps and interface state density increased by two order of magnitude and shunt resistance reduced by one order of magnitude, indicating that high density of interface states and shunt paths occur in the CdS film diodes.

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15

Hu, Jun, Larry X. Li, Petre Alexandrov, Xiao Hui Wang, and Jian Hui Zhao. "5 kV, 9.5 A SiC JBS Diodes with Non-Uniform Guard Ring Edge Termination for High Power Switching Application." Materials Science Forum 600-603 (September 2008): 947–50. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.947.

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4H-SiC Junction Barrier Diodes (JBS) diodes were designed, fabricated and tested. The JBS diodes based on a 45μm thick, 1.4×1015cm-3 doped drift layer with multiple non-uniform spacing guard ring edge termination showed a blocking voltage of over 5kV. The 5kV JBS diode has a forward current density of 108A/cm2 at 3.5V and a specific on resistance (RSP_ON) of 25.2mW·cm2, which is very close to the theoretical RSP_ON of 23.3mΩ·cm2. DC I-V measurement of packaged JBS diodes showed a forward current of 100A at a voltage drop of 4.3V. A half-bridge inverter with a bus voltage up to 2.5kV was used to characterize the high power switching performance of SiC JBS diodes. A large inductance load of 1mH was used to simulate the load of a high power AC induction motor. Compared to a Si PIN diode module, the SiC JBS package reduces diode turn-off energy loss by 30% and Si IGBT turn-on energy loss by 21% at room temperature.

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Vandevender, J. P., S. A. Slutz, D. B. Seidel, R. S. Coats, P. A. Miller, C. W. Mendel, and J. P. Quintenz. "PBFA II ion diode theory and implications." Laser and Particle Beams 5, no. 3 (August 1987): 439–49. http://dx.doi.org/10.1017/s0263034600002925.

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Fully electromagnetic, relativistic, two-dimensional, particle-in-cell (PIC) simulations of barrel-type and extractor-type Applied-B ion diodes have increased our confidence in the design of present and future diodes for the Particle Beam Fusion Accelerator II (PBFA II). In addition, the data from various experiments on Pro to I, Proto II, and PBFA I Applied-B ion diodes are inconsistent with previous models of diode operation, based on anode-cathode gap closure from expanding plasmas. A new model has been devised and applied to the PBFA II diode to explain the diode impedance and its time history, and to suggest methods for controlling the impedance.

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Polyntsev, Egor, Evgeny Erofeev, and Igor Yunusov. "The Influence of Design on Electrical Performance of AlGaN/GaN Lateral Schottky Barrier Diodes for Energy-Efficient Power Applications." Electronics 10, no. 22 (November 15, 2021): 2802. http://dx.doi.org/10.3390/electronics10222802.

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In this paper, lateral AlGaN/GaN Schottky barrier diodes are investigated in terms of anode construction and diode structure. An original GaN Schottky diode manufacturing-process flow was developed. A set of experiments was carried out to verify dependences between electrical parameters of the diode, such as reverse and forward currents, ON-state voltage, forward voltage and capacitance, anode-to-cathode distance, length of field plate, anode length, Schottky contact material, subanode recess depth, and epitaxial structure type. It was found that diodes of SiN/Al0.23Ga0.77N/GaN epi structure with Ni-based anodes demonstrated two orders of magnitude lower reverse currents than diodes with GaN/Al0.25Ga0.75N/GaN epitaxial structure. Diodes with Ni-based anodes demonstrated lower VON and higher IF compared with diodes with Pt-based anodes. As a result of these investigations, an optimal set of parameters was selected, providing the following electrical characteristics: VON = 0.6 (at IF = 1 mA/mm), forward voltage of the diode VF = 1.6 V (at IF = 100 mA/mm), maximum reverse voltage VR = 300 V, reverse leakage current IR = 0.04 μA/mm (at VR = −200 V), and total capacitance C = 3.6 pF/mm (at f = 1 MHz and 0 V DC bias). Obtained electrical characteristics of the lateral Schottky barrier diode demonstrate great potential for use in energy-efficient power applications, such as 5G multiband and multistandard wireless base stations.

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Etor, David, Linzi Emma Dodd, and Claudio Balocco. "High-Performance Atomic Layer Deposited Al2O3 Insulator Based Metal-Insulator-Metal Diode." FUOYE Journal of Engineering and Technology 7, no. 2 (June 30, 2022): 174–78. http://dx.doi.org/10.46792/fuoyejet.v7i2.815.

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The fabrication of metal–insulator– metal (MIM) diode using an ultrathin Al2O3 insulator layer, deposited using atomic layer deposition (ALD) is presented. The Al2O3 insulating layer was found to be highly uniform throughout the diode junction, effectively overcoming the main fabrication challenge in MIM diodes. The diodes exhibit strong non-linear current–voltage curves, have a typical zero-bias curvature coefficient of 5.4 V−1 and a zero-bias resistance of approximately 118 kΩ, a value considerably smaller than other MIM diode topologies and that allows more current to be rectified. Other results including current ratio and yield of the diode also competes favorably with the state-of-the-art MIM diodes such as the recently produced metal-octadecyltrichlorosilane (OTS)-metal structure.

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Zymmer, K., and P. Mazurek. "Comparative investigation of SiC and Si power electronic devices operating at high switching frequency." Bulletin of the Polish Academy of Sciences: Technical Sciences 59, no. 4 (December 1, 2011): 555–59. http://dx.doi.org/10.2478/v10175-011-0068-0.

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Comparative investigation of SiC and Si power electronic devices operating at high switching frequencyThe paper presents results of measurements of the reverse recovery current and dynamic forward voltage of the silicon carbide (SiC) Schottky diodes operating at a 500 A/μs current slope. These data were compared with the corresponding parameters determined for ultrafast silicon (Si) diodes. Results of power losses measurement in SiC Schottky diodes operating at switching frequency range of (10-200) kHz are presented and compared with corresponding data of ultrafast Si diodes. Also, results of power losses measurements in transistors of dc voltage switch are shown. Investigations were conducted with a SiC and the ultrafast Si freewheeling diode at the transistor switching frequency of 100 kHz. The results of measuring power losses dissipated in the dc converter with a SiC Schottky diode and the ultrafast silicon diode are also presented.

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Hamada, Toshiyuki, Ikuo Nanno, Norio Ishikura, Masayuki Fujii, and Shinichiro Oke. "Breakdown Characteristics of Schottky Barrier Diodes Used as Bypass Diodes in Photovoltaic Modules under Lightning Surges." Energies 16, no. 23 (November 27, 2023): 7792. http://dx.doi.org/10.3390/en16237792.

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Damage to photovoltaic power-generation systems by lightning causes the failure of bypass diodes (BPDs) in solar cell modules. Bypass diodes damaged by lightning experience high-resistance open- or short-circuit failures. When a bypass diode experiences short-circuit failure due to indirect lightning, the damage may not be immediately visible. When solar radiation is subsequently received, the current circulating in the closed circuit formed by the cell string and short-circuited bypass diode flows, resulting in overheating and burnout of the short-circuited bypass diode. The authors’ research group previously reported that when a bypass diode fails within a range of approximately 10−1 Ω to 10 Ω, the heat generated by the failed bypass diode is high, posing the risk of burnout. However, the detailed failure characteristics of the bypass diode that fail because of indirect lightning surges are not clear. In this study, we performed indirect lightning fracture tests and clarified the dielectric breakdown characteristics of Schottky barrier diodes (SBDs) contained in the bypass diodes of photovoltaic solar cell modules, which are subjected to indirect lightning surges. Furthermore, we attempted to determine the conditions of indirect lightning that resulted in a higher risk of heat and ignition. As a result, short-circuit failures occurred in all the Schottky barrier diodes that were destroyed in the forward or reverse direction because of the indirect lightning surges. Moreover, the fault resistance decreased as the indirect lightning surge charge increased. These results indicate that the risks of heat generation and burnout increase when the Schottky barrier diode fails with a relatively low electric charge from an indirect lightning surge. In addition, we observed that for a forward breakdown of the Schottky barrier diode, the range of the indirect lightning surge that results in a fault condition with a higher risk of heat generation and burnout is wider than that for a reverse breakdown.

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Cui, Yinjie, Jian Guo, Jie Xu, Hao Chi Zhang, Xiao-Wei Zhu, and Cheng Qian. "Design of 2N-diode power-combined frequency tripler with coupled suspended striplines." International Journal of Microwave and Wireless Technologies 9, no. 9 (June 23, 2017): 1781–90. http://dx.doi.org/10.1017/s175907871700068x.

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A novel scheme for power-combined frequency tripler adopting 2N diodes is proposed in this work. Even mode coupled suspended substrate stripline is used to divide and recombine the input and output power. The circuits of the tripler are printed on both sides of the substrate, with N diodes on the front side and the other N diodes on the back side. The front diodes and back diodes are in anti-parallel connection, and DC biased separately to increase the bandwidth and power capacity. Three Q-band prototypes with two, four, and six diodes are fabricated and tested. The output compression powers at output frequency of 43.5 GHz for two/four/six-diode tripler are 9.2, 11, and 12 dBm, respectively. Power capacity is improved with the proposed tripler. Optimum DC bias is also discussed in this work, and it is found that it first increases with drive power, and then drops when large drive power applied because of the increased series resistance of the diode due to high junction temperature.

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Peng, Guoping, Chuanming Fu, Ping Yang, Ben Shi, Hongzhan Wang, Jun Zeng, and Yangbo Liu. "Research on Lightning Overvoltage Characteristics of High-Voltage Diode Rectifier." Electronics 11, no. 23 (November 22, 2022): 3840. http://dx.doi.org/10.3390/electronics11233840.

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Failure of the high-voltage diode rectifier caused by lightning will cause huge losses. The traditional analysis of overvoltage induced by the high-voltage diode rectifier shell under lightning stroke cannot adapt to the overvoltage process caused by lightning stroke-induced conduction invading the inside of the high-voltage diode rectifier. Therefore, this paper proposes to establish a high-frequency equivalent model of the core components of the high-voltage diode rectifier, including diodes, reactors, transformers, and overhead lines. On this basis, a lightning overvoltage model of lightning-induced conduction into the high-voltage diode rectifier is built, and the transient process of diode lightning overvoltage under the constraint of reverse recovery charge is analyzed. Then, we describe the transient distribution of overvoltage in high-voltage diode rectifiers caused by lightning stroke. The transient distribution of overvoltage induced by lightning in series diodes under different diode equivalent models is analyzed by simulation. The simulation results show that the inconsistent parameters of series diodes can easily lead to diode damage due to uneven voltage distribution when lightning strikes. Therefore, this paper puts forward a scheme to reduce lightning damage, including selecting diodes with the same parameters and adding fast-melting fuses at the transformer’s secondary side and in front of the series diode bridge arm. The simulation shows that the scheme proposed in this paper can effectively prevent the high-voltage diode rectifier from being damaged by lightning strikes.

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Dragoman, Mircea, Adrian Dinescu, Martino Aldrigo, and Daniela Dragoman. "Quantum Graphene Asymmetric Devices for Harvesting Electromagnetic Energy." Nanomaterials 14, no. 13 (June 28, 2024): 1114. http://dx.doi.org/10.3390/nano14131114.

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We present here the fabrication at the wafer level and the electrical performance of two types of graphene diodes: ballistic trapezoidal-shaped graphene diodes and lateral tunneling graphene diodes. In the case of the ballistic trapezoidal-shaped graphene diode, we observe a large DC current of 200 µA at a DC bias voltage of ±2 V and a large voltage responsivity of 2000 v/w, while in the case of the lateral tunneling graphene diodes, we obtain a DC current of 1.5 mA at a DC bias voltage of ±2 V, with a voltage responsivity of 3000 v/w. An extended analysis of the defects produced during the fabrication process and their influences on the graphene diode performance is also presented.

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Boltovets, Mykola S., Volodymyr V. Basanets, Nicolas Camara, Valentyn A. Krivutsa, and Konstantinos Zekentes. "Investigation of Microwave Switching 4HSiC pin Diodes in the 20-500 °C Temperature Range." Materials Science Forum 483-485 (May 2005): 997–1000. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.997.

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The switching characteristics of 4Н-SiС p-i-n diodes with 6 µm long i-region were investigated in the 20÷500 °С temperature ranges. It is shown that the diode reverse current increases with temperature and does not exceed 10-7 А at temperature of 500 °С (UR = 100 V). The diode resistance rF at forward current of 40 mA decreases as temperature increases from 20 up to 500 °С. The effective minority charge carrier lifetime in the i-region (τр) was determined from the diode switching (from forward current to reverse voltage) characteristics; it was about 5 ns. As temperature increases from 20 up to 500 °С, τр increases by a factor of 3. We discuss the possibility of application of such diodes (i) in microwave switching facilities and (ii) as temperature sensors. A comparison is made between the parameters of 4Н-SiС p-i-n diodes and those of Si p-i-n diodes with comparable values of calculated blocking voltage.

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Choi, Won Suk, Sung Mo Young, Richard L. Woodin, A. W. Witt, and J. Shovlin. "A High Performance CCM PFC Circuit Using a SiC Schottky Diode and a Si SuperFET^TM Switch." Materials Science Forum 600-603 (September 2008): 1235–38. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.1235.

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SuperFETTM MOSFETs and silicon carbide (SiC) Schottky diodes are applied to continuous conduction mode active power factor correction pre-regulators. SuperFETTM MOSFETs can reduce power losses dramatically with their extremely low RDS(ON) and fast switching. The SiC Schottky diode has virtually zero reverse recovery current and high thermal conductivity, and is close to an ideal diode for a CCM PFC circuit. Due to these outstanding switching characteristics, frequency can be increased. In this paper, the SiC Schottky diode’s and SuperFETTM MOSFET’s performance have been verified in a CCM PFC boost converter. These products can reduce the total power losses and enhance the system efficiency.

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Vassilevski, Konstantin. "SILICON CARBIDE DIODES FOR MICROWAVE APPLICATIONS." International Journal of High Speed Electronics and Systems 15, no. 04 (December 2005): 899–930. http://dx.doi.org/10.1142/s0129156405003454.

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Silicon carbide ( SiC ) offers significant advantages for microwave high power devises due to its unique electrical and thermal properties. This review presents a summary of the current position in the development of silicon carbide diodes operating at microwave frequencies: varactors, Schottky barrier mixer diodes, p-i-n and IMPATT diodes. Simplified theory of device operation is given for each kind of microwave diodes to derive the figures of merit, to estimate the potential silicon carbide performance for fabrication of these diodes and to compare SiC with conventional semiconductors. These analyses are followed by description of diode design, fabrication and measured characteristics.

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Lu, W., K. L. Pey, N. Singh, K. C. Leong, Q. Liu, C. L. Gan, G. Q. Lo, D. L. Kwong, and C. S. Tan. "Effect of Nickel Silicide Induced Dopant Segregation on Vertical Silicon Nanowire Diode Performance." MRS Proceedings 1439 (2012): 89–94. http://dx.doi.org/10.1557/opl.2012.845.

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ABSTRACTIn this work, Dopant Segregated Schottky Barrier (DSSB) and Schottky Barrier (SB) vertical silicon nanowire (VSiNW) diodes were fabricated on p-type Si substrate using CMOS-compatible processes to investigate the effects of segregated dopants at the silicide/silicon interface and different annealing processes on nickel silicide formation in DSSB VSiNW diodes. With segregated dopants at the silicide/silicon interface, VSiNW diodes showed higher on-current, due to an enhanced carrier tunneling, and much lower leakage current. This can be attributed to the altered energy bands caused by the accumulated Arsenic dopants at the interface. Moreover, DSSB VSiNW diodes also gave ideality factor much closer to unity and exhibited lower electron SBH (ΦBn) than SB VSiNW diodes. This proved that interfacial accumulated dopants could impede the inhomogeneous nature of the Schottky diodes and simultaneously, minimize the effect of Fermi level pinning and ionization of surface defect states. Comparing the impact of different silicide formation annealing using DSSB VSiNW diodes, the 2-step anneal process reduces the silicide intrusion length within the SiNW by ~ 5X and the silicide interface was smooth along the (100) direction. Furthermore, the 2-step DSSB VSiNW diode also exhibited much lower leakage current and an ideality factor much closer to unity, as compared to 1-step DSSB VSiNW diode.

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Winge, R. K., V. A. Fassel, and D. E. Eckels. "Spectral Line-Diode Registry Effects with Photodiode Array Detectors." Applied Spectroscopy 40, no. 4 (May 1986): 461–64. http://dx.doi.org/10.1366/0003702864508746.

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A limitation of photodiode array detectors for spectroscopic intensity measurements relates to the spacing of the diodes and the errors generated when a spectral line is not in exact registry with the diode or diodes from which its intensity is being measured. These misregistry intensity errors, which may be as high as 25 to 30%, are documented for a range of spectral bandwidths and for single diode (pixel) intensities and multiple diode summations of intensities.

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Cassara, Frank A. "Determining the State of N Diodes in a Multi-Diode Network." International Journal of Electrical Engineering & Education 47, no. 2 (April 2010): 223–26. http://dx.doi.org/10.7227/ijeee.47.2.11.

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Many circuits appearing in pulse and digital electronics are multi-diode networks. In such networks diodes can typically be modeled as either on or off. Determining the states of all diodes can become quite challenging (and sometimes frustrating) for the undergraduate student who has not yet developed intuitive insight into the subject. In this paper a logical and systematic procedure for determining the state of all the diodes in a multi-diode network is presented to simplify the circuit analysis, ease the frustration, and help the student develop physical insight into the design and analysis of electronic circuits.

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Parker-Allotey, Nii Adotei, Dean P. Hamilton, Olayiwola Alatise, Michael R. Jennings, Philip A. Mawby, Rob Nash, and Rob Magill. "Improved Energy Efficiency Using an IGBT/SiC-Schottky Diode Pair." Materials Science Forum 717-720 (May 2012): 1147–50. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1147.

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This paper will demonstrate how the newer Silicon Carbide material semiconductor power devices can contribute to carbon emissions reduction and the speed of adoption of electric vehicles, including hybrids, by enabling significant increases in the driving range. Two IGBT inverter leg modules of identical power rating have been manufactured and tested. One module has silicon-carbide (SiC) Schottky diodes as anti-parallel diodes and the other silicon PiN diodes. The power modules have been tested and demonstrate the superior electrothermal performance of the SiC Schottky diode over the Si PiN diode leading to a reduction in the power module switching losses.

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Zhao, Jian H., Kuang Sheng, and Ramon C. Lebron-Velilla. "SILICON CARBIDE SCHOTTKY BARRIER DIODE." International Journal of High Speed Electronics and Systems 15, no. 04 (December 2005): 821–66. http://dx.doi.org/10.1142/s0129156405003430.

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This chapter reviews the status of SiC Schottky barrier diode development. The fundamentals of Schottky barrier diodes are first provided, followed by the review of high-voltage SiC Schottky barrier diodes, junction-barrier Schottky diodes and merged-pin-Schottky diodes. The development history is reviewed and the key performance parameters are discussed. Applications of SiC SBDs in power electronics circuits as well as other areas such as gas sensors, microwave and UV detections are also presented, followed by discussion of remaining challenges.

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Shashikala, B. N., and B. S. Nagabhushana. "Reduction of reverse leakage current at the TiO2/GaN interface in field plate Ni/Au/n-GaN Schottky diodes." Semiconductor Physics, Quantum Electronics and Optoelectronics 24, no. 04 (November 23, 2021): 399–406. http://dx.doi.org/10.15407/spqeo24.04.399.

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This paper presents the fabrication procedure of TiO2 passivated field plate Schottky diode and gives a comparison of Ni/Au/n-GaN Schottky barrier diodes without field plate and with field plate of varying diameters from 50 to 300 µm. The influence of field oxide (TiO2) on the leakage current of Ni/Au/n-GaN Schottky diode was investigated. This suggests that the TiO2 passivated structure reduces the reverse leakage current of Ni/Au/n-GaN Schottky diode. Also, the reverse leakage current of Ni/Au/n-GaN Schottky diodes decreases as the field plate length increases. The temperature-dependent electrical characteristics of TiO2 passivated field plate Ni/Au/n-GaN Schottky diodes have shown an increase of barrier height within the temperature range 300…475 K.

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Hjort, Tomas, Adolf Schöner, Andy Zhang, Mietek Bakowski, Jang-Kwon Lim, and Wlodek Kaplan. "High Temperature capable SiC Schottky diodes, based on buried grid design." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2014, HITEC (January 1, 2014): 000058–60. http://dx.doi.org/10.4071/hitec-tp11.

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Electrical characteristics of 4H-SiC Schottky barrier diodes, based on buried grid design are presented. The diodes, rated to 1200V/10A and assembled into high temperature capable TO254 packages, have been tested and studied up to 250°C. Compared to conventional SiC Schottky diodes, Ascatron's buried grid SiC Schottky diode demonstrates several orders of magnitude reduced leakage current at high temperature operation.

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Shugurov K.Yu., Mozharov A.M., Sapunov G.A., Fedorov V.V., Moiseev E.I., Blokhin S.A., Kuzmenkov A.G., and Mukhin I.S. "Microwave Schottky diodes based on single GaN nanowires." Technical Physics Letters 48, no. 8 (2022): 18. http://dx.doi.org/10.21883/tpl.2022.08.55053.19229.

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A series of Schottky diodes based on single GaN nanowires has been fabricated. Based on the data of small-signal frequency analysis (parameter S21) of diode structures at various bias voltages, the parameters of the corresponding equivalent electrical circuit were determined. It is shown that the cutoff frequency of the fabricated diodes reaches 27.5 GHz. Keywords: GaN, nanowires, microwave band, Schottky diode.

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RAZEGHI, MANIJEH. "GaN-BASED LASER DIODES." International Journal of High Speed Electronics and Systems 09, no. 04 (December 1998): 1007–80. http://dx.doi.org/10.1142/s0129156498000415.

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We discuss optical properties of III-Nitride materials and structures. These properties are critical for the development of III-Nitride-based light-emitting diodes and laser diodes. Minority carrier diffusion length in GaN has been determined to be ~ 0.1 μm. The properties of lasing in GaN have been studied using optical pumping. The red shift of emission peak observed in stimulated emission of GaN has been modeled and attributed to many-body interactions at high excitation. The correlation of photoluminescence and optical pumping has shown that band-to-band, or shallow donor-related bandtail to valence band transition is the necessary mechanism of lasing in GaN. This work showed that the thermal instability of InGaN at growth temperature is of main concern in the fabrication of InGaN-based MQW laser diode structures. Photoluminescence has shown that the InGaN composition is very sensitive to the growth temperature. Therefore InGaN growth temperature should be strictly controlled during InGaN-based MQW growth. This work discovered that proper annealing of Si-doping of InGaN/GaN MQW structures that are properly annealed could reduce the lasing threshold and improve the slope efficiency. Over-annealing of these MQWs can lead to thermal degradation of the active layer. Si-doping in over-annealed MQW structure further degrades its quality. The degradation has been attributed to the increase of defects and/or nonuniform local potential formation. P-type doping on the top of InGaN/GaN could also lead to the formation of compensation layer which also degrades laser diode performances. Optical confinement and carrier confinement in InGaN-based laser diode structures are evaluated for optimum laser diode design. The state-of-the-art and fundamental issues of InGaN-based light-emitting diodes and laser diodes are discussed.

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36

Chen, Chun-An, Yu-Ting Hsu, Wen-How Lan, Kai-Feng Huang, Kuo-Jen Chang, Mu-Chun Wang, and Chien-Jung Huang. "On the Nitrogen Doping in Erbium and Nitrogen Codoped Magnesium Zinc Oxide Diode by Spray Pyrolysis." Crystals 10, no. 1 (January 12, 2020): 34. http://dx.doi.org/10.3390/cryst10010034.

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Diodes with an erbium and nitrogen codoped magnesium zinc oxide (MgZnO:Er,N) active layer were fabricated by spray pyrolysis on Si substrate with aqueous solutions including magnesium nitrate, zinc acetate, erbium acetate, ammonium acetate, and indium nitrate precursors. Diodes with different nitrogen content in their precursor were prepared and their properties were investigated. With scanning electron microscopy, film surface with mixed hexagonal flakes and tiny blocks was characterized for all samples. Certain morphologies varied for samples with different N contents. In the photoluminescence analyses, the intensity of the oxygen-related defects peak increased with the increasing of nitrogen content. The diodes were fabricated with an Au and In deposition on the top and backside. The diode current–voltage as well as capacitance–voltage characteristics were examined. An ununiformed n-type concentration distribution with high concentration near the interface in the MgZnO:Er,N layer was characterized for all samples. Diodes with high nitrogen content exhibit reduced breakdown voltage and higher interface concentration characteristics. Under reversed bias conditions with an injection current of 50 mA, a light spectrum with two distinct green emissions around wavelengths 532 and 553 nm was observed. A small spectrum variation was characterized for diodes prepared from different nitrogen content. The diode luminescence characteristics were examined and the diode prepared from N/Zn=1 in the precursor showed an optimal injection current-to-luminescence property. The current and luminescence properties of the diode were characterized and discussed.

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Zemliak, Alexander, and Eugene Machusky. "Analysis of Electrical and Thermal Models for Pulsed IMPATT Diode Simulation." WSEAS TRANSACTIONS ON CIRCUITS AND SYSTEMS 20 (July 12, 2021): 156–65. http://dx.doi.org/10.37394/23201.2021.20.19.

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Some nonlinear models are presented for modeling and analyzing IMPATT high-power pulse diodes. These models are suitable for analyzing different operating modes of the oscillator. The first model is a precise one, which describes all important electrical phenomena on the basis of the continuity equations and Poisson´s equation, and it is correct until 300 GHz. The second approximate mathematical model suitable for the analysis of IMPATT diode stationary operation oscillator and for optimization of internal structure of the diode. The temperature distribution in the semiconductor structure is obtained using the special thermal model of the IMPATT diode, which is based on the numerical solution of the non-linear thermal conductivity equation. The described models can be applied for the analysis, optimization and practical design of pulsedmode millimetric IMPATT diodes. It can also be used to evaluate the thermal behavior of diodes, to correctly select the shape and amplitude of a supply pulse, and to design various types of high-power pulsed millimeter IMPATT diodes with a complex doping profile with improved characteristics.

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38

Li, Yu Zhu, Wei Jiang Ni, Zhe Yang Li, Yun Li, Chen Chen, and Xiao Jian Chen. "600V-30A 4H-SiC JBS and Si IGBT Hybrid Module." Materials Science Forum 679-680 (March 2011): 714–17. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.714.

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600V-30A 4H-SiC Junction Barrier Schottky（JBS）diodes were designed and fabricated using SiC epitaxy and device technology. SiC JBS diodes were packaged in Si IGBT module，and switching measurements were done at 125°C. As free-wheeling diode for Si IGBT, 600V SiC JBS diode was compared to 600V ultra-fast diode from International Rectifier. SiC diode achieved 90% recovery loss reduction and corresponding IGBT showed 30% lower turn-on loss. However, SiC JBS diode has larger on-state voltage drop due to small chip area. On-state power loss will be lowered by increasing SiC chip area.

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Nakayama, Koji, Yoshitaka Sugawara, Hidekazu Tsuchida, Toshiyuki Miyanagi, Isaho Kamata, Tomonori Nakamura, Katsunori Asano, and R. Ishii. "8.3 kV 4H-SiC PiN Diode on (000-1) C-Face with Small Forward Voltage Degradation." Materials Science Forum 483-485 (May 2005): 969–72. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.969.

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The dependence of forward voltage degradation on crystal faces for 4H-SiC pin diodes has been investigated. The forward voltage degradation has been reduced by fabricating the diodes on the (000-1) C-face off-angled toward <11-20>. High-voltage 4H-SiC pin diodes on the (000-1) C-face with small forward voltage degradation have also been fabricated successfully. A high breakdown voltage of 4.6 kV and DVf of 0.04 V were achieved for a (000-1) C-face pin diode. A 8.3 kV blocking performance, which is the highest voltage in the use of (000-1) C-face, is also demonstrated in 4H-SiC pin diode.

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Оболенская, Е. С., А. С. Иванов, Д. Г. Павельев, В. А. Козлов, and А. П. Васильев. "Сравнение особенностей транспорта электронов и субтетрагерцовой генерации в диодах на основе 6-, 18-, 30-, 70- и 120-периодных сверхрешеток GaAs/AlAs." Физика и техника полупроводников 53, no. 9 (2019): 1218. http://dx.doi.org/10.21883/ftp.2019.09.48127.10.

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AbstractA comparison of the features of electron transport in diodes based on 6-, 18-, 30-, 70-, and 120-period GaAs/AlAs superlattices with a similar design is performed. However, the number of periods and diode areas are different. The values of the parasitic resistances of the near-contact diode regions are correlated, and the specific voltage drop across one superlattice period is determined for all special points in the current–voltage characteristics of the diodes. The mechanism of the appearance of stable current oscillations in diodes based on 6-, 18-, 30-, 70-, and 120-period GaAs/AlAs superlattices with a high doping level is investigated.

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Kang, In Ho, Wook Bahng, Sung Jae Joo, Sang Cheol Kim, and Nam Kyun Kim. "Post Annealing Etch Process for Improved Reverse Characteristics of 4H-SiC Diode." Materials Science Forum 615-617 (March 2009): 663–66. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.663.

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The effects of post annealing etch process on electrical performances of a 4H-SiC Schottky diodes without any edge termination were investigated. The post etch was carried out using various dry the dry etch techniques such as Inductively Coupled Plasma (ICP) and Neutral Beam Etch (NBE) in order to eliminate suspicious surface damages occurring during a high temperature ion activation process. The leakage current of diodes treated by NBE measured at -100V was about one order lower than that of diode without post etch and a half times lower than that of diode treated by ICP without a significant degradation of forward electrical characteristics. Based on the above results, the post annealing process was adapted to a junction barrier Schottky diode with a field limiting ring. The blocking voltages of diode without post annealing etch and diodes treated by ICP and NBE were -1038V, -1125V, and -1595V, respectively.

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Hull, Brett A., Mrinal K. Das, Jim Richmond, Bradley Heath, Joseph J. Sumakeris, Bruce Geil, and Charles Scozzie. "High Current 6 kV 4H-SiC PiN Diodes for Power Module Switching Applications." Materials Science Forum 527-529 (October 2006): 1355–58. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1355.

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Forward voltage (VF) drift, in which a 4H-SiC PiN diode suffers from an irreversible increase in VF under forward current flow, continues to inhibit commercialization of 4H-SiC PiN diodes. We present our latest efforts at fabricating high blocking voltage (6 kV), high current (up to 50 A) 4H-SiC PiN diodes with the best combination of reverse leakage current (IR), forward voltage at rated current (VF), and VF drift yields. We have achieved greater than 60% total die yield onwafer for 50 A diodes with a chip size greater than 0.7 cm2. A comparison of the temperature dependent conduction and switching characteristics between a 50 A/6 kV 4H-SiC PiN diode and a commercially available 60 A/4.5 kV Si PiN diode is also presented.

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Treu, Michael, Roland Rupp, Chee Siew Tai, Peter Blaschitz, Jochen Hilsenbeck, Helmut Brunner, Dethard Peters, Rudolf Elpelt, and T. Reimann. "A Surge Current Stable and Avalanche Rugged SiC Merged pn Schottky Diode Blocking 600V Especially Suited for PFC Applications." Materials Science Forum 527-529 (October 2006): 1155–58. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1155.

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Today silicon carbide (SiC) Schottky diodes are mainly used in the power factor control (PFC) unit of high end switched mode power supplies, due to their outstanding switching performance compared to Si pn diodes. In the case of the PFC it is required that the diodes are capable of handling surge currents up to several times the current of normal operation. The paper shows the surge current capability of a merged pn Schottky diode where the p-areas are optimized as efficient emitters. During normal operation the diode is behaving like a normal Schottky diode whereas during surge current condition the diode is behaving like a pn diode. For a sine half wave of 10 ms we achieved a non repetitive peak forward current capability of about 3700 A/cm2 which is about ten times rated current (for comparison: destructive current density of a standard Schottky diode ~ 1650 A/cm²). Additionally the device shows a stable avalanche and is able to withstand a single shot avalanche of 9.5 3s and 12.5 mJ.

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Kuryshchuk, S. I., A. I. Mostovyi, I. P. Koziarskyi, and M. M. Solovan. "INFLUENCE OF GRAPHITE FILM THICKNESS ON ELECTRICAL AND PHOTOELECTRIC PROPERTIES OF GRAPHITE/n-Si SCHOTTKY-TYPE HETEROJUNCTION." Sensor Electronics and Microsystem Technologies 19, no. 3 (October 18, 2022): 30–37. http://dx.doi.org/10.18524/1815-7459.2022.3.265294.

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Graphite /n-Si Schottky diodes were fabricated by electron beam evaporation of graphite thin films on n-type silicon substrates. The influence of the thickness of graphite films on the photoelectric and electrical properties of these diodes has been studied. It is determined that our Schottky diodes can be used as photodiodes and solar cells. The temperature dependences of shunt and series resistances of diodes were also investigated. In the case of forward and reverse bias, the dominant mechanisms of current transfer through the studied diodes were determined. The responsivity and detectivity of graphite/n-Si Schottky diodes were also calculated. The studied heterojunctions have pronounced diode characteristics with a rectification coefficient for a structure with a thinner film RR ≈ 5·102, and for a structure with a thicker film RR ≈ 102.

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Muray, Kathleen. "Photometry of diode emitters: light emitting diodes and infrared emitting diodes." Applied Optics 30, no. 16 (June 1, 1991): 2178. http://dx.doi.org/10.1364/ao.30.002178.

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Sridharan, Arati, Sanchit Chirania, Bruce Towe, and Jit Muthuswamy. "Remote Stimulation of Sciatic Nerve Using Cuff Electrodes and Implanted Diodes." Micromachines 9, no. 11 (November 14, 2018): 595. http://dx.doi.org/10.3390/mi9110595.

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We demonstrate a method of neurostimulation using implanted, free-floating, inter-neural diodes. They are activated by volume-conducted, high frequency, alternating current (AC) fields and address the issue of instability caused by interconnect wires in chronic nerve stimulation. The aim of this study is to optimize the set of AC electrical parameters and the diode features to achieve wireless neurostimulation. Three different packaged Schottky diodes (1.5 mm, 500 µm and 220 µm feature sizes) were tested in vivo (n = 17 rats). A careful assessment of sciatic nerve activation as a function of diode–dipole lengths and relative position of the diode was conducted. Subsequently, free-floating Schottky microdiodes were implanted in the nerve (n = 3 rats) and stimulated wirelessly. Thresholds for muscle twitch responses increased non-linearly with frequency. Currents through implanted diodes within the nerve suffer large attenuations (~100 fold) requiring 1–2 mA drive currents for thresholds at 17 µA. The muscle recruitment response using electromyograms (EMGs) is intrinsically steep for subepineurial implants and becomes steeper as diode is implanted at increasing depths away from external AC stimulating electrodes. The study demonstrates the feasibility of activating remote, untethered, implanted microscale diodes using external AC fields and achieving neurostimulation.

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Kitai, Hidenori, Yasuo Hozumi, Hiromu Shiomi, Masaki Furumai, Kazuhiko Omote, and Kenji Fukuda. "Demonstration of 13-kV Class Junction Barrier Schottky Diodes in 4H-SiC with Three-Zone Junction Termination Extension." Materials Science Forum 897 (May 2017): 451–54. http://dx.doi.org/10.4028/www.scientific.net/msf.897.451.

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The static and dynamic characteristics of 13-kV class 4H-SiC junction barrier Schottky (JBS) diodes with a three-zone junction termination extension (JTE) are presented. Using an anisotropy breakdown model, technology computer-aided design simulation of devices with a three-zone JTE agrees well with the obtained experimental results, correctly predicting a sharp drop in blocking voltage at high JTE acceptor concentrations. The forward voltage of the JBS diode at 75°C and a forward current of 500 mA is reduced to approximately one-ninth by that of 13 series-connected 1000-V Si PiN diodes. This suggests that conduction losses of traditional high-voltage circuits which conventionally use series-connected devices can be drastically reduced by replacing the series-connected devices with a single 13-kV class SiC JBS diode. Moreover, the reverse recovery current waveform of the 13-kV class SiC JBS diode shows that these diodes have lower reverse recovery losses than a 13-kV SiC PiN diode.

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Lee, Sehan, Yunseop Yu, Sungwoo Hwang, and Doyeol Ahn. "Equivalent Circuit Model of Semiconductor Nanowire Diode by SPICE." Journal of Nanoscience and Nanotechnology 7, no. 11 (November 1, 2007): 4089–93. http://dx.doi.org/10.1166/jnn.2007.012.

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An equivalent circuit model of nanowire diodes is introduced. Because nanowire diodes inevitably involve a metal-semiconductor-metal structure, they consist of two metal-semiconductor contacts and one resistor in between these contacts. Our equivalent circuit consists of two Schottky diodes and one resistor. The current through the reverse-biased Schottky diode is calculated from the thermionic field emission (TFE) theory and that of the forward-biased Schottky diode is obtained from the classical thermionic emission (TE) equation. Our model is integrated into the conventional circuit simulator SPICE by a sub-circuit with TFE and TE routines. The results simulated with our model by SPICE are in good agreement with various, previously reported experimental results.

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Lee, Sehan, Yunseop Yu, Sungwoo Hwang, and Doyeol Ahn. "Equivalent Circuit Model of Semiconductor Nanowire Diode by SPICE." Journal of Nanoscience and Nanotechnology 7, no. 11 (November 1, 2007): 4089–93. http://dx.doi.org/10.1166/jnn.2007.18083.

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Abstract:

An equivalent circuit model of nanowire diodes is introduced. Because nanowire diodes inevitably involve a metal-semiconductor-metal structure, they consist of two metal-semiconductor contacts and one resistor in between these contacts. Our equivalent circuit consists of two Schottky diodes and one resistor. The current through the reverse-biased Schottky diode is calculated from the thermionic field emission (TFE) theory and that of the forward-biased Schottky diode is obtained from the classical thermionic emission (TE) equation. Our model is integrated into the conventional circuit simulator SPICE by a sub-circuit with TFE and TE routines. The results simulated with our model by SPICE are in good agreement with various, previously reported experimental results.

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Skibinski, G., D. Braun, D. Kirschnik, and R. Lukaszewski. "Developments in Hybrid Si – SiC Power Modules." Materials Science Forum 527-529 (October 2006): 1141–47. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1141.

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This paper investigates utilization of silicon carbide (SiC) Schottky power diodes as inverter Free Wheel Diodes (FWD) in a commercially available standard Econopak module also packaged with latest generation low-loss IGBT silicon. Static and switching characteristics of SiC diodes over standard module operating temperature 25 0C to 125 0C (298 0K - 398 0K) are measured. Module Turn-on, Turn-off and conduction losses vs. frequency are calculated and measured for three phase motor drive operation. Measurements are compared to standard modules using all Silicon (Si) IGBT- diode. System benefits justifying the increased SiC diode cost, such as EMI reduction, increased efficiency, reduced magnetic filter volume and reduced cooling requirements at higher allowable switching frequencies is investigated.

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Journal articles on the topic 'Diodes'

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