Academic literature on the topic 'Diodes à barrière de Schottky – Propriétés thermiques'
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Dissertations / Theses on the topic "Diodes à barrière de Schottky – Propriétés thermiques":
Tang, Xiao. "Optimisation théorique et expérimentale de composants hyperfréquences de la filière nitrure de gallium à partir d’études physico-thermiques et électriques." Thesis, Lille 1, 2010. http://www.theses.fr/2010LIL10004/document.
The work of this thesis is dedicated to study gallium nitride based components by means of electric studies and a physical-thermal model. The GaN based devices are very promising for high-frequency microwave power applications. However, their electric performances are limited by two principal causes: The first cause is related to the contacts realization. In this work, we studied TiN Schottky contacts on AlGaN/GaN heterostructures on Si (111) substrates realized by magnetron spray. A detailed analysis of the obtained parameters, such as the barrier height, the ideality factor and the reverse leakage current, permits optimizing the topology and the technological processes, such as the annealing temperature and time, thepassivation and the surface pre-etching. The theory related to the conduction mechanisms through the contact is also recalled, showing that the electric field assisted tunnel effect and the space charge limited current are the dominant mechanisms. The second cause is related to the important self-heating effect in the GaN based components inconsideration of the high dissipated power, which degrades the electric performances and the reliability as well. In this framework, a physical-thermal model based on the coupling of an energy-balance model with a thermal model was developed. Such a model takes into account the lattice temperature everywhere in the device and describes the electric and thermal performances of GaN based components. Thanks to the developed model, firstly the AlGaN/GaN and InAlN/GaN heterostructures were analyzed on different substrates by means of TLM patterns, in order to evaluate their electric and thermal performances so as to optimize the substrate choice. The GaN based Gunn diodes with different topologies were also studied with the goal to optimize a structure in terms of frequency oscillation and power conversion, taking into account the thermal effects. After a comparison between the simulation results and the measured ones, it is proved that the physical-thermal model is an accurate and reliable predictive tool, which is extremely useful for the technologists and furthermore, permits a better understanding of the observed physical phenomena
Bouillaud, Hugo. "Fabrication et optimisation des caractéristiques thermiques de diodes Schottky de la filière GaAs et reportées sur SiHR pour des applications de multiplication de fréquences." Electronic Thesis or Diss., Université de Lille (2022-....), 2023. http://www.theses.fr/2023ULILN043.
The exponential needs associated with applications exploiting the THz domain require to expand the range of available sources and optimize their fabrication processes. In this thesis, we focused on schottky diodes for its use as frequency multipliers. Our experimental research involved optimizing the characteristics of GaAs schottky diodes through the development and implementation of an innovative fabrication process. First, we fabricated GaAs schottky diodes on GaAs substrate with several aspect ratios in order to make a reference in terms of device. Then we fabricated a flip-chip device for a 150 GHz frequency multiplication application in a waveguide block. Finally, in order to enhance the power handling of the diodes, we optimized their thermal dissipation by transferring their epitaxial structure onto a substrate with higher thermal conductivity : SiHR (high resistivity silicon). The complete technological processes for these fabrications are detailed, and the last part of the study is dedicated to their characterization. On one hand, we assessed any variations in the characteristics of GaAs diodes on GaAs induced by the different aspect ratios. On the other hand, we compared the two technologies on SiHR and GaAs substrates. This work demonstrates the potential of this type of transferred technology, where a significant reduction of thermal resistance is observed and is associated with a notable improvement of the series resistance
Prévot, Jean-Louis. "Relation entre propriétés électriques et adhésives des interfaces polyoléfine-métal." Mulhouse, 1988. http://www.theses.fr/1988MULH0099.
Meva'a, Charles Simon. "Caractérisation électrique du matériau AlInAs élaboré par épitaxie par jets moléculaires à basse température." Ecully, Ecole centrale de Lyon, 1996. http://www.theses.fr/1996ECDL0056.
Lajaunie, Luc. "Influence de la préparation de surface sur les propriétés physiques des contacts à base Cobalt sur n-Ge." Poitiers, 2009. http://theses.edel.univ-poitiers.fr/theses/2009/Lajaunie-Luc/2009-Lajaunie-Luc-These.pdf.
The influence of various surface cleaning procedures on both electrical properties and microstructure of Co based n-Ge Schottky contacts has been studied. In-depth diffusion of metallic impurities into the Ge substrate has been reported after thermal pre-treatments. After germanidation, gettering of the metallic impurities by the germanide phases has been observed. While no more oxide interlayer is observed after HF etching and thermal pre-treatment at 700°C, a temperature of 400°C has been found to be not enough to remove the oxide interlayer. However, it modifies the chemical nature of the oxide interlayer. A complex microstructure is reported for all the samples after germanidation. For most of the samples, the coexistence of Co5Ge7 and CoGe2 structures and an increase of the roughness of the M/SC interface have been observed. The particular microstructure observed, after germanidation, for the sample pre-treated at 400°C has been ascribed to the remaining oxide interlayer. Whatever the pre-treatments, the behaviours of all the Schottky diodes could not be explained by the thermionic model only. This model leads to a large underestimation of the Richardson’s constant. By a detailed analysis of the temperature dependence of the Schottky barrier heights, we have pointed out the necessity to reason in term of barrier inhomogeneity, these last being strongly influenced by the microstructure. The electrical results have been explained in the framework of the Fermi level pinning concept. While a strong Fermi level pinning is observed for intimate contacts, the presence of the native Ge oxide at the M/SC interface yields a depinning of the Fermi level. However, this depinning has been found to be dependent on the chemical nature of the oxide interlayer
Letellier, Juliette. "Diodes Schottky en diamant un nouveau pas vers les applications pour l'électronique de puissance." Thesis, Université Grenoble Alpes (ComUE), 2019. http://www.theses.fr/2019GREAT073.
Diamond is known as the best candidate for power electronics application. Currently the most advance component is the Schottky diode. This device still is already showing promising results but some improvement are still needed. In this thesis, some of them will be proposed and presented from the diamond growth and fabrication steps and after characterized to see if it is suitable. I will first discuss about diamond growth and present new improvements about it that concern the heavily doped layer as well as the non-intentionally doped one. After both part of the characteristics curve have been under investigation for improvement. The ON-state, to increase the current passing through the device by working on the design and on the component parallelization. The OFF-state, by proposing different solution to increase the reverse blocking capabilities. At the same time a transversal ( i.e in the diamond depth) study will be presented to understand how is the electric field inside the diode. Finally, the first heteroepitaxially grown diode on diamond/Ir/SrTiO3/Si will be described
El, Zammar Georgio. "Process of high power Schottky diodes on the AlGaN/GaN heterostructure epitaxied on Si." Thesis, Tours, 2017. http://www.theses.fr/2017TOUR4030/document.
Si-based devices for power conversion applications are reaching their limits. Wide band gap GaN is particularly interesting due to the high electron saturation velocity and high breakdown electric field, especially when epitaxied on low cost substrates such as Si. This work was dedicated to the development and fabrication of the Schottky diode on AlGaN/GaN on Si. SiNx passivation in very low tensile strain is used. Ti (70 nm)/Al (180 nm) partially recessed ohmic contacts annealed at 800 ºC exhibited a 2.8 Ω.mm Rc with a sheet resistance of 480 Ω/sq. Schottky diodes with the previously cited passivation and ohmic contact were fabricated with a fully recessed Schottky contact annealed at 400 ºC. A Schottky barrier height of 0.82 eV and an ideality factor of 1.49 were obtained. These diodes also exhibited a very low leakage current density (up to -400 V) of 8.45x10-8 A.mm-1. The breakdown voltage varied between 480 V and 750 V
Santos, Osvaldo Joaquim dos. "Etude de mécanisme de transport sur les photodétecteurs IV-VI." Montpellier 2, 1995. http://www.theses.fr/1995MON20090.
Brouri, Tayeb. "Élaboration et étude des propriétés électriques des couches minces et des nanofils de ZnO." Phd thesis, Université Paris-Est, 2011. http://tel.archives-ouvertes.fr/tel-00648173.
Amor, Sarrah. "Étude des défauts dans les alliages de semi-conducteurs à grand gap B(AlGa)N et de leur rôle dans les propriétés de transport : application aux photo-détecteurs U." Thesis, Université de Lorraine, 2017. http://www.theses.fr/2017LORR0286/document.
Gallium nitride (GaN) and its ternary and quaternary alloys are attracting more and more interest in the scientific and industrial communities for their potential for use in high frequency electronic devices, for transistors with high electronic mobility, for UV photo-detection and new-generation solar cells. The outcome of these new components is still be seen to be limited in many areas, mainly due to the lack of control of electrical contacts implementation techniques. It is in this context that this thesis takes place.Although the main objective of this thesis deals with the study of the electrically active defects in high band gap B(AlGa)N semiconductor alloys and their role in the transport properties, the production of ohmic and Schottky contacts is an essential step in the realization of the devices under study. For the Ohmic contacts, we have deposited Ti/Al/Ti/Au (15/200/15/200) layers by thermal evaporation. Using the Transfer Length Method (TLM), we obtained specific contact resistances in the order of 3x10-4Wcm2. The Circular TLM has also confirmed this result. Besides, a theoretical modelling has been carried out to analyse the experimental measurements. Schottky diodes were then produced by depositing 150 nm platinum (Pt) metal contacts. An ideality factor of 1.3 and a barrier height of 0.76 eV were obtained. On the other hand, a study of transport mechanisms has been performed. It allowed us to demonstrate the existence of the direct tunnelling and the Thermionic Field Emission, in addition to the conventional thermionic effect. This result was underpinned by current and capacity measurements as a function of temperature. For photo detectors, we performed the same measurements of current and capacity in darkness and under illumination at suitable wavelengths. These measurements allowed understanding the internal gain that was observed on the samples. Furthermore, they show the effect of the thermally active mechanisms whose activation energies were determined by the Arrhenius technique. Using the Deep-Level Transient Spectroscopy (DLTS) technique followed up the study of the electrically active defects. This technique has recently been implemented in the laboratory. It allowed us to perform measurements under different conditions including various reverse bias, different frequencies, and different voltage pulse amplitudes and durations. One of the important results is the possibility of characterizing both majority and minority traps by simply changing the polarization conditions, as opposed to the usual procedures where an additional optical excitation is often necessary to increase the concentration of the minority carriers. In accordance with most of the encountered literature results, we found 6 electron traps all located below 0.9 eV of the conduction band, 3 hole traps in the 0.6-0.7 eV range above the valence band and one hole trap distributed at the interface. A rigorous procedure was developed and confirmed our results obtained by the standard Arrhenius technique