Relevant bibliographies by topics / Diodes à avalanche à photon unique

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Academic literature on the topic 'Diodes à avalanche à photon unique'

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Published: 25 January 2025

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Journal articles on the topic "Diodes à avalanche à photon unique"

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Zunino, Alessandro, Giacomo Garrè, Eleonora Perego, Sabrina Zappone, Mattia Donato, and Giuseppe Vicidomini. "s2ISM: A Comprehensive Approach for Uncompromised Super-Resolution and Optical Sectioning in Image Scanning Microscopy." EPJ Web of Conferences 309 (2024): 04021. http://dx.doi.org/10.1051/epjconf/202430904021.

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Image Scanning Microscopy (ISM) enables good signal-to-noise ratio (SNR), super-resolution and high information content imaging by leveraging array detection in a laser-scanning architecture. However, the SNR is still limited by the size of the detector, which is conventionally small to avoid collecting out-of-focus light. Nonetheless, the ISM dataset inherently contains the axial information of the fluorescence emitters. We leverage this knowledge to achieve computational optical sectioning without sacrificing the conventional benefits of ISM. We invert the physical model to fuse the raw dataset into a single image with improved sampling, SNR. lateral resolution, and optical sectioning. We provide a complete theoretical framework and validate our approach with experimental images of biological samples acquired with a custom setup equipped with a single photon avalanche diode (SPAD) array detector. Furthermore, we generalize our method to other imaging techniques, such as multi-photon excitation fluorescence microscopy and fluoresce lifetime imaging. To enable this latter, we take advantage of the single-photon timing ability of SPAD arrays, accessing additional sample information. Our method outperforms conventional reconstruction techniques and opens new perspectives for exploring the unique spatio-temporal information provided by SPAD array detectors.
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Lu, Z., X. Zheng, W. Sun, J. Campbell, X. Jiang, and M. A. Itzler. "InGaAs/InP Single Photon Avalanche Diodes." ECS Transactions 45, no. 33 (April 2, 2013): 37–43. http://dx.doi.org/10.1149/04533.0037ecst.

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Gulinatti, Angelo. "Single photon avalanches diodes." Photoniques, no. 125 (2024): 63–68. http://dx.doi.org/10.1051/photon/202412563.

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Twenty years ago the detection of single photons was little more than a scientific curiosity reserved to a few specialists. Today it is a flourishing field with an ecosystem that extends from university laboratories to large semiconductor manufacturers. This change of paradigm has been stimulated by the emergence of critical applications that rely on single photon detection, and by technical progresses in the detector field. The single photon avalanche diode has unquestionably played a major role in this process.
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Xu, Qing Yao, Hong Pei Wang, Xiang Chao Hu, Hai Qian, Ying Cheng Peng, Xiao Hang Ren, and Yan Jie Li. "Quenching Circuit of Avalanche Diodes for Single Photon Detection." Applied Mechanics and Materials 437 (October 2013): 1073–76. http://dx.doi.org/10.4028/www.scientific.net/amm.437.1073.

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To reduce the afterpulsing in single photon detection based on avalanche diodes, an advanced passive quenching circuit for operation in free-running mode is developed. The measurement setup is designed. The dark count rate (DCR) and afterpulsing of Single photon avalanche diodes (SPADs) are measured. The results show that the new passive quenching circuit has a better afterpulsing performance compared to traditional circuits.
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Petticrew, Jonathan D., Simon J. Dimler, Xinxin Zhou, Alan P. Morrison, Chee Hing Tan, and Jo Shien Ng. "Avalanche Breakdown Timing Statistics for Silicon Single Photon Avalanche Diodes." IEEE Journal of Selected Topics in Quantum Electronics 24, no. 2 (March 2018): 1–6. http://dx.doi.org/10.1109/jstqe.2017.2779834.

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Pullano, Salvatore A., Giuseppe Oliva, Twisha Titirsha, Md Maruf Hossain Shuvo, Syed Kamrul Islam, Filippo Laganà, Antonio La Gatta, and Antonino S. Fiorillo. "Design of an Electronic Interface for Single-Photon Avalanche Diodes." Sensors 24, no. 17 (August 28, 2024): 5568. http://dx.doi.org/10.3390/s24175568.

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Single-photon avalanche diodes (SPADs) belong to a family of avalanche photodiodes (APDs) with single-photon detection capability that operate above the breakdown voltage (i.e., Geiger mode). Design and technology constraints, such as dark current, photon detection probability, and power dissipation, impose inherent device limitations on avalanche photodiodes. Moreover, after the detection of a photon, SPADs require dead time for avalanche quenching and recharge before they can detect another photon. The reduction in dead time results in higher efficiency for photon detection in high-frequency applications. In this work, an electronic interface, based on the pole-zero compensation technique for reducing dead time, was investigated. A nanosecond pulse generator was designed and fabricated to generate pulses of comparable voltage to an avalanche transistor. The quenching time constant (τq) is not affected by the compensation capacitance variation, while an increase of about 30% in the τq is related to the properties of the specific op-amp used in the design. Conversely, the recovery time was observed to be strongly influenced by the compensation capacitance. Reductions in the recovery time, from 927.3 ns down to 57.6 ns and 9.8 ns, were observed when varying the compensation capacitance in the range of 5–0.1 pF. The experimental results from an SPAD combined with an electronic interface based on an avalanche transistor are in strong accordance, providing similar output pulses to those of an illuminated SPAD.
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Ghioni, Massimo, Angelo Gulinatti, Ivan Rech, Franco Zappa, and Sergio Cova. "Progress in Silicon Single-Photon Avalanche Diodes." IEEE Journal of Selected Topics in Quantum Electronics 13, no. 4 (2007): 852–62. http://dx.doi.org/10.1109/jstqe.2007.902088.

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Zappa, F., A. Tosi, A. Dalla Mora, and S. Tisa. "SPICE modeling of single photon avalanche diodes." Sensors and Actuators A: Physical 153, no. 2 (August 2009): 197–204. http://dx.doi.org/10.1016/j.sna.2009.05.007.

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Neri, L., S. Tudisco, F. Musumeci, A. Scordino, G. Fallica, M. Mazzillo, and M. Zimbone. "Dead Time of Single Photon Avalanche Diodes." Nuclear Physics B - Proceedings Supplements 215, no. 1 (June 2011): 291–93. http://dx.doi.org/10.1016/j.nuclphysbps.2011.04.034.

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Mita, R., G. Palumbo, and P. G. Fallica. "Accurate model for single-photon avalanche diodes." IET Circuits, Devices & Systems 2, no. 2 (2008): 207. http://dx.doi.org/10.1049/iet-cds:20070180.

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Dissertations / Theses on the topic "Diodes à avalanche à photon unique"

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Bérubé, Benoît-Louis. "Conception de matrices de diodes avalanche à photon unique sur circuits intégrés CMOS 3D." Thèse, Université de Sherbrooke, 2014. http://savoirs.usherbrooke.ca/handle/11143/92.

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La photodétection est un sujet de recherche très actif encore de nos jours et l’industrie, particulièrement de la physique des hautes énergies et de l’imagerie médicale, est en quête de détecteurs avec une plus grande sensibilité, de meilleures résolutions temporelles et une plus grande densité d’intégration. Pour ces raisons, les photodiodes avalanche à photon unique (Single photon avalanche diode, ou SPAD) suscitent beaucoup d’intérêt depuis quelques années pour ses performances en temps et sa grande photosensibilité. Les SPAD sont des photodiodes avalanche opérées au-dessus de la tension de claquage et un photoporteur atteignant la région de multiplication peut à lui seul déclencher une avalanche soutenue de porteurs et entraîner le claquage de la jonction. Un circuit détecte le courant divergent et l’étouffe en abaissant la polarisation de la jonction sous la tension de claquage. Le circuit recharge ensuite la jonction en réappliquant la tension initiale permettant la détection d’un nouveau photon. Dans le but d’augmenter le nombre de photons simultanés détectables, les SPAD s’intègrent en matrice. Cependant, dans le cas où une matrice de SPAD et leurs circuits d’étouffement s’intègrent sur le même substrat, la surface photosensible devient limitée par l’espace qu’occupent les circuits d’étouffement. Dans le but d’augmenter leur région photosensible, les matrices de SPAD peuvent s’intégrer en trois dimensions (3D) avec leurs circuits d’étouffement. Ce projet porte sur le développement de matrices de SPAD en technologie CMOS HV 0,8 µm de Teledyne DALSA dédiées à une intégration 3D avec leurs circuits d’étouffement actifs. Les résultats de caractérisation montrent que les SPAD atteignent une résolution temporelle de 27 ps largeur à mi hauteur (LMH), possèdent un taux de comptage en obscurité (DCR, ou Dark Count Rate) de 3 s[indice supérieur -1]µm[indice supérieur -2] et ont une probabilité de photodétection (PDP) de 49 %. De plus, une méthode d’isolation utilisant un puits p a été développée. Les SPAD conçus avec cette méthode ont un facteur de remplissage pouvant atteindre 54 % et une probabilité de diaphonie de 6,6 % à une tension excédentaire à la tension de claquage (V[indice inférieur E]) de 4 V.
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B??rub??, Beno??t-Louis. "Conception de matrices de diodes avalanche ?? photon unique sur circuits int??gr??s CMOS 3D." Thèse, Universit?? de Sherbrooke, 2014. http://savoirs.usherbrooke.ca/handle/11143/92.

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La photod??tection est un sujet de recherche tr??s actif encore de nos jours et l???industrie, particuli??rement de la physique des hautes ??nergies et de l???imagerie m??dicale, est en qu??te de d??tecteurs avec une plus grande sensibilit??, de meilleures r??solutions temporelles et une plus grande densit?? d???int??gration. Pour ces raisons, les photodiodes avalanche ?? photon unique (Single photon avalanche diode, ou SPAD) suscitent beaucoup d???int??r??t depuis quelques ann??es pour ses performances en temps et sa grande photosensibilit??. Les SPAD sont des photodiodes avalanche op??r??es au-dessus de la tension de claquage et un photoporteur atteignant la r??gion de multiplication peut ?? lui seul d??clencher une avalanche soutenue de porteurs et entra??ner le claquage de la jonction. Un circuit d??tecte le courant divergent et l?????touffe en abaissant la polarisation de la jonction sous la tension de claquage. Le circuit recharge ensuite la jonction en r??appliquant la tension initiale permettant la d??tection d???un nouveau photon. Dans le but d???augmenter le nombre de photons simultan??s d??tectables, les SPAD s???int??grent en matrice. Cependant, dans le cas o?? une matrice de SPAD et leurs circuits d?????touffement s???int??grent sur le m??me substrat, la surface photosensible devient limit??e par l???espace qu???occupent les circuits d?????touffement. Dans le but d???augmenter leur r??gion photosensible, les matrices de SPAD peuvent s???int??grer en trois dimensions (3D) avec leurs circuits d?????touffement. Ce projet porte sur le d??veloppement de matrices de SPAD en technologie CMOS HV 0,8 ??m de Teledyne DALSA d??di??es ?? une int??gration 3D avec leurs circuits d?????touffement actifs. Les r??sultats de caract??risation montrent que les SPAD atteignent une r??solution temporelle de 27 ps largeur ?? mi hauteur (LMH), poss??dent un taux de comptage en obscurit?? (DCR, ou Dark Count Rate) de 3 s[indice sup??rieur -1]??m[indice sup??rieur -2] et ont une probabilit?? de photod??tection (PDP) de 49 %. De plus, une m??thode d???isolation utilisant un puits p a ??t?? d??velopp??e. Les SPAD con??us avec cette m??thode ont un facteur de remplissage pouvant atteindre 54 % et une probabilit?? de diaphonie de 6,6 % ?? une tension exc??dentaire ?? la tension de claquage (V[indice inf??rieur E]) de 4 V.
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Helleboid, Rémi. "Advanced modeling and simulation of Single-Photon Avalanche Diodes." Electronic Thesis or Diss., université Paris-Saclay, 2024. http://www.theses.fr/2024UPAST193.

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Cette thèse fait progresser la modélisation, la simulation et l'optimisation des diodes à avalanche à photon unique (Single-Photon Avalanche Diodes, ou SPAD), capables de détecter des photons individuels avec une grande sensibilité. Les SPAD sont essentiels dans des applications telles que les communications quantiques, l'imagerie et les mesures de temps de vol, où la détection précise de photons uniques est cruciale. Cependant, les SPAD fonctionnent par des processus complexes et stochastiques, comme la multiplication par avalanche, la gigue temporelle et l'extinction, rendant leur modélisation précise difficile. Cette thèse aborde ces complexités en développant des modèles de simulation avancés, en appliquant des techniques d'optimisation et en explorant des méthodes pour améliorer les performances des SPAD. La thèse commence par une revue de la technologie SPAD et de ses principes. Les SPAD détectent les photons en déclenchant un processus d'avalanche dans un champ électrique élevé, qui amplifie le signal du photon en une impulsion mesurable. Cette thèse étend le modèle de McIntyre, traditionnellement utilisé pour les dispositifs à avalanche, en trois dimensions, permettant des simulations plus précises des géométries complexes et des champs électriques des SPAD. Une contribution majeure est l'introduction de l'optimisation par essaim de particules (Particle Swarm Optimization, ou PSO) couplée à un solveur de Poisson non linéaire pour optimiser des paramètres de SPAD comme la tension de claquage, la largeur de la zone de déplétion et la gigue temporelle. La PSO explore efficacement l'espace de conception, équilibrant les exigences de performance et permettant la création de SPADs adaptés à diverses applications, de l'imagerie en basse lumière à la détection rapide de photons. Pour améliorer la précision des simulations de SPAD, la thèse développe une méthode Monte Carlo par advection-diffusion (ADMC), qui combine les processus d'advection et de diffusion pour modéliser de manière réaliste le transport des porteurs, notamment dans les zones de champ élevé où les avalanches se produisent. Ce modèle surmonte les limites des méthodes Monte Carlo traditionnelles, permettant une représentation précise de la gigue temporelle, de la probabilité de claquage et du taux de comptage de bruit.La thèse culmine avec le développement d'un modèle auto-cohérent Monte Carlo-Poisson pour les simulations transitoires de SPAD. En combinant ADMC avec un solveur de Poisson en 3D, ce modèle capture en temps réel des comportements critiques des SPAD, tels que l'initiation de l'avalanche, la réduction de champ et l'extinction. Cette boucle de rétroaction est essentielle pour comprendre les comportements transitoires des SPAD, car les porteurs influencent le champ électrique lorsqu'ils s'accumulent. Ce modèle est particulièrement utile pour étudier la nature stochastique de l'extinction, qui affecte la fiabilité et la temporalité des SPAD. En résumé, cette thèse apporte des contributions significatives à la modélisation, la simulation et l'optimisation des SPAD. En développant un modèle auto-cohérent Monte Carlo-Poisson et en intégrant des techniques avancées d'optimisation, ce travail fournit un cadre complet pour améliorer les performances des SPAD et soutenir les avancées futures dans des applications de haute précision
This thesis advances the modeling, simulation, and optimization of Single-Photon Avalanche Diodes (SPADs), which detect individual photons with high sensitivity. SPADs are essential for applications in quantum communications, imaging, and time-of-flight measurements, where precise single-photon detection is crucial. However, SPADs operate through complex, stochastic processes such as avalanche multiplication, timing jitter, and quenching, making accurate modeling a challenge. This thesis addresses these complexities by developing advanced simulation models, applying optimization techniques, and exploring methods to enhance SPAD performance. The thesis starts by reviewing SPAD technology and principles. SPADs detect photons by triggering an avalanche process in a high electric field, which amplifies the photon's signal into a measurable pulse. This thesis extends the McIntyre model, traditionally used for avalanche devices, to three dimensions, allowing for more accurate simulations of complex SPAD geometries and electric fields. A core contribution is introducing Particle Swarm Optimization (PSO) coupled with a nonlinear Poisson solver to optimize SPAD parameters like breakdown voltage, depletion width, and timing jitter. PSO navigates the design space effectively, balancing competing performance requirements and enabling customized SPADs for different applications, from low-light imaging to fast photon counting. To improve SPAD simulation accuracy, the thesis develops an Advection-Diffusion Monte Carlo (ADMC) method, which combines advection and diffusion processes for a realistic model of carrier transport, especially in high-field regions where avalanches occur. This model overcomes limitations of traditional Monte Carlo methods, achieving accurate representations of timing jitter, breakdown probability, and dark count rate. The thesis culminates in a self-consistent Monte Carlo-Poisson model for transient SPAD simulations. By combining ADMC with a 3D Poisson solver, this model captures critical SPAD behaviors like avalanche initiation, field depletion, and quenching in real time. This feedback loop is essential for understanding transient SPAD behaviors, as carriers impact the electric field as they accumulate. The model is especially useful for studying the stochastic nature of quenching, which influences SPAD reliability and timing. In summary, this thesis makes significant contributions to SPAD modeling, simulation, and optimization. By creating a self-consistent Monte Carlo-Poisson model and integrating advanced optimization techniques, this work provides a comprehensive framework for improving SPAD performance and supports further advances in high-precision applications
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Sicre, Mathieu. "Study of the noise aging mechanisms in single-photon avalanche photodiode for time-of-flight imaging." Electronic Thesis or Diss., Lyon, INSA, 2023. http://www.theses.fr/2023ISAL0104.

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Les diodes à avalanche à photon unique (SPAD) sont utilisées pour les capteurs à temps de vol afin de déterminer la distance d'une cible. Cependant, ils sont sujets à des déclenchements parasites par des porteurs de charge générés de manière parasitaire, quantifiés en tant que taux de comptage dans l’obscurité (DCR), ce qui peut compromettre la précision de la distance mesurée. Pour résoudre ce problème, une méthodologie de simulation a été mise en place pour évaluer le DCR. Cela est réalisé en simulant la probabilité de claquage d'avalanche, intégrée avec le taux de génération de porteurs de charge à partir de défauts. Cette méthodologie permet d'identifier les sources potentielles de DCR avant stress. Pour garantir l'intégrité des mesures de distance sur une longue période, il est nécessaire de prédire le niveau de DCR dans diverses conditions d'exploitation. La méthodologie de simulation susmentionnée est utilisée pour identifier les sources potentielles de DCR après stress. Pour un modèle cinétique précis de dégradation de type porteurs chauds (HCD), il est essentiel de considérer non seulement la distribution d'énergie des porteurs, mais également la distribution de l'énergie de dissociation de la liaison Si-H à l'interface Si/SiO2. La probabilité de dissociation d'ionisation d'impact est utilisée pour modéliser le processus de création de défauts, qui présente une dépendance temporelle sous-linéaire en raison de l'épuisement progressif des précurseurs de défauts. Une mesure précise de la distance nécessite de distinguer le signal du bruit ambiant et du plancher de DCR. L'impact de DCR peut être estimé en considérant la réflectance de la cible et les conditions d'éclairage ambiant. En résumé, ce travail utilise une méthodologie de caractérisation et de simulation approfondie pour prédire le DCR dans les dispositifs de type SPAD le long de sa durée de vie, permettant ainsi d'évaluer son impact sur les mesures de distance
Single-Photon Avalanche Diode (SPAD) are used for Time-of-Flight (ToF) sensors to determine distance from a target by measuring the travel time of an emitted pulsed signal. These photodetectors work by triggering an avalanche of charge carriers upon photon absorption, resulting in a substantial amplification which can be detected. However, they are subject to spurious triggering by parasitic generated charge carriers, quantified as Dark Count Rate (DCR), which can compromise the accuracy of the measured distance. Therefore, it is crucial to identify and eliminate the potential source of DCR. To tackle this issue, a simulation methodology has been implemented to assess the DCR. This is achieved by simulating the avalanche breakdown probability, integrated with the carrier generation rate from defects. The breakdown probability can be simulated either in a deterministically, based on electric-field streamlines, or stochastically, by means of drift-diffusion simulation of the random carrier path. This methodology allows for the identification of the potential sources of pre-stress DCR by comparing simulation results to experimental data over a wide range of voltage and temperature. To ensure the accuracy of distance range measurements over time, it is necessary to predict the DCR level under various operating conditions. The aforementioned simulation methodology is used to identify the potential sources of post-stress DCR by comparing simulation results to stress experiments that evaluate the principal stress factors, namely temperature, voltage and irradiance. Furthermore, a Monte-Carlo study has been conducted to examine the device-to-device variation along stress duration. For an accurate Hot-Carrier Degradation (HCD) kinetics model, it is essential to consider not only the carrier energy distribution function but also the distribution of Si−H bond dissociation energy distribution at the Si/SiO2 interface. The number of available hot carriers is estimated from the carrier current density according to the carrier energy distribution simulated by means of a full-band Monte-Carlo method. The impact-ionization dissociation probability is employed to model the defect creation process, which exhibits sub-linear time dependence due to the gradual exhaustion of defect precursors. Accurate distance ranging requires distinguishing the signal from ambient noise and the DCR floor, and ensuring the target’s accumulated photon signal dominates over other random noise sources. An analytical formula allows to estimate the maximum distance ranging using the maximum signal strength, ambient noise level, and confidence levels. The impact of DCR can be estimated by considering the target’s reflectance and the ambient light conditions. In a nutshell, this work makes use of a in-depth characterization and simulation methodology to predict DCR in SPAD devices along stress duration, thereby allowing the assessment of its impact on distance range measurements
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Panglosse, Aymeric. "Modélisation pour la simulation et la prédiction des performances des photodiodes à avalanche en mode Geiger pour Lidars spatiaux." Thesis, Toulouse, ISAE, 2019. http://www.theses.fr/2019ESAE0046.

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Ce travail porte sur la modélisation pour la simulation et la prédiction desparamètres de performance des photodiodes à avalanche polarisée en mode Geiger en technologieCMOS, ou SPADs CMOS, pour Lidars spatiaux. Ce travail de thèse vise à développerune méthodologie basée sur : des modèles de la physique du semi-conducteur, des mesuresfournissant des informations sur le procédé technologique visé et des outils commerciaux desimulation. Ceci, dans le but de simuler les paramètres de performance des SPADs en serapprochant autant que possible de la réalité du procédé technologique afin d’améliorer lesprédictions. Des SPADs ont été conçues et caractérisées de manière à acquérir les paramètresde performances et les confronter aux résultats de simulation pour valider notre approche.De plus, la conception des SPADs s’est faite en regard des spécifications Lidar du CNESet d’Airbus Defence and Space en vue d’obtenir des structures permettant d’améliorer nosconnaissances en matière de : compréhension des mécanismes physiques, conception et méthodede caractérisation des SPADs CMOS. Ceci, dans l’intention d’étudier la possibilitéd’intégrer ces détecteurs dans leurs futurs systèmes Lidars spatiaux
This work focuses on modelling for simulation and prediction purposes ofCMOS SPADs performance parameters used in spaceborne Lidars. The innovative side ofthis work lies in a new methodology based on physical models for semiconductor devices,measurements performed on the targeted CMOS process and commercial simulation tools topredict CMOS SPADs performances. This method allows to get as close as possible to theprocess reality and to improve predictions. A set of SPAD has been designed and fabricated,and is used for measurements and model validation. SPAD design has been done with respectto CNES and Airbus Defence Space Lidar specification, in order to produce devices that willimprove our knowledge in terms of understanding of the involved physical mechanisms, SPADsdesign and test method, for a possible integration within their future spaceborne Lidars
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Pellegrini, Sara. "InGaAs/InP single-photon avalanche diodes." Thesis, Heriot-Watt University, 2005. http://hdl.handle.net/10399/49.

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Rochas, Alexis. "Single photon avalanche diodes in CMOS technology /." [S.l.] : [s.n.], 2003. http://library.epfl.ch/theses/?nr=2814.

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Chitnis, Danial. "Single photon avalanche diodes for optical communications." Thesis, University of Oxford, 2013. http://ora.ox.ac.uk/objects/uuid:5fd582dd-8167-4fe4-88f8-871ba905ade1.

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In order to improve the sensitivity of an optical receiver, the gain and the collection area of the photo-detectors within the receiver should be increased. Detectors with internal gain such as avalanche photodiodes (APD) are usually used to increase the sensitivity of the receiver. One problem with APDs is the sensitivity of their gain to their bias voltage, which makes them challenging to be fabricated in a standard CMOS process due to variations in their gain. However, when an APD is biased over its breakdown voltage, it is sensitive to a single photon, hence, referred to as a single photon avalanche diodes (SPAD). The SPADs are photon-counting detectors, which are less sensitive to their bias voltage, and can be integrated with rest of the electronic circuitry that form an optical receiver. An avalanche diode requires dedicated circuits to be operated in the SPAD mode. These circuits make the diode insensitive to an incident photon for a duration that is known as deadtime. Unfortunately, The collection area of the PD, APD, and SPADs are limited to their capacitance. Hence, a large photo-detector leads to a larger capacitance, which reduces the bandwidth of the receiver. In this thesis, a photon counting optical receiver based on an array of SPADs is proposed which increases the collection area with a low output capacitance. The avalanche diode and peripheral circuits which operate and readout-out the SPAD array are fabricated in the commercially available UMC 0.18 μm CMOS process. Initially, the avalanche diode is tested and characterised. A high performance circuit is then designed and tested which is able to achieve short deadtimes up to 4 ns. Once the photon counting operation of the SPAD is verified, a numerical model is developed to investigate the influence of several factors, including the deadtime, on the performance of the photon-counting detector in a communication link. Based on the simulation results, which show the advantages of an array over a single detector, a prototype detector array of 64 asynchronous SPADs is designed and tested. This array uses a high-speed readout mechanism which is inspired by the current steering digital-to-analogue converters. Bit error ratio tests (BERT) verify the photon counting capability of the proposed detector, and a bit error rate of 1E-3 has been achieved at data rate of 100 Mbps. In addition, the array of SPAD is compatible with a front-end of conventional optical receiver which uses a photodiode as a photo detector.
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Alsolami, Ibrahim. "Visible light communications with single-photon avalanche diodes." Thesis, University of Oxford, 2014. http://ora.ox.ac.uk/objects/uuid:744eeb47-8bb6-4776-8b8f-f7b6374d89bd.

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This thesis explores the use of single-photon avalanche diodes (SPADs) for visible light communications (VLC). The high sensitivity of SPADs can potentially enhance the performance of VLC receivers. However, a SPAD-based system has challenges that need to be addressed before it can be considered as a viable option for VLC. The first challenge is the susceptibility of SPAD-based receivers to variations in ambient light. The high sensitivity of SPADs is advantageous for signal detection, but also makes SPADs vulnerable to variations in ambient light. In this thesis, the performance of a SPAD-based receiver is investigated under changing lighting conditions. Analytical expressions to quantify performance are derived, and an experiment is conducted to gain further understanding of system performance. It is shown that a SPAD-based receiver is highly sensitive to illumination changes when on-off keying (OOK) is employed, and that pulse-position modulation (PPM) is a preferred modulation scheme as it is more robust. The second challenge is broadcasting to SPAD-based receivers with different capabilities. A traditional broadcasting scheme is time-sharing, whereby a transmitter sends data to receivers in an alternating manner. Broadcasting to SPAD-based receivers is challenging as receivers may have diverse capabilities. In this thesis, a new multiresolution modulation scheme is proposed, which can potentially improve system performance over the traditional timesharing approach. The performance of the proposed scheme is analyzed, and a proof-of-concept experiment is performed to demonstrate its viability.
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Jouni, Ali. "Space radiation effects on CMOS single photon avalanche diodes (SPADs)." Electronic Thesis or Diss., Toulouse, ISAE, 2024. http://www.theses.fr/2024ESAE0012.

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Le sujet de cette thèse traite des effets des radiations spatiales sur des détecteurs CMOS à avalanches, et particulièrement sur les dispositifs SPADs (pour Single Photon Avalanche Diode en anglais, ou photodiode à avalanche à photon unique). Ces photodiodes présentent un gain interne presque infini et sont donc sensibles à des très faibles conditions de lumières. Ainsi, avec en plus une excellente résolution temporelle, ces capteurs peuvent être très intéressant pour des applications spatiales nécessitant des mesures de temps de vols, comme la topographie d’objets célestes ou les Rendez-vous spatiaux. Cependant, l’espace est un environnement hostile du fait des radiations provenant du Soleil, des particules piégées dans la magnétosphère terrestre ainsi qu’au-delà du système solaire. De ce fait, dans le cadre de ces travaux de thèse, un modèle est mis en place pour prédire la dégradation du courant d’obscurité des SPADs, le Dark Count Rate (DCR), après des irradiations aux protons. Expérimentalement, deux technologies de matrices de SPADs sont irradiées avec des protons, des rayons X et des rayons γ. De ce fait, les effets ionisants et non-ionisants sont investigués pour ces capteurs à avalanches, et des différences en comparaison avec les pixelsdes capteurs d’images standard sont soulignées. Ensuite, les caractéristiques des défauts induits par la création d’états d’interface entre les oxides et le silicium et les dommages de déplacement atomique dans le substrat sont examinées, avec notamment la présence de comportement RTS (Random Telegraph Signal). Enfin, l’identification de la nature de ces défauts est réalisée par l’intermédiaire de recuits isochrones après l’expositions des matrices de SPADs aux trois différentes radiations mentionnées au-dessus
The subject of this thesis deals with the effects of space radiation on CMOS avalanche detectors, particularly on Single Photon Avalanche Diodes (SPADs). These photodiodes exhibit nearly infinite internal gain and are therefore sensitive to very low light conditions. Thus, with excellent temporal resolution, these sensors can be very interesting for space applications requiring time-of-flight measurements, such as the topography of celestial objects or space Rendezvous. However, space is a hostile environment due to radiation from the Sun, particles trapped in the Earth’s magnetosphere, and beyond the solar system. Consequently, within the framework of this thesis work, a model is established to predict thedegradation of the dark current of SPADs, the Dark Count Rate (DCR), after proton irradiations. Experimentally, two SPAD array technologies are irradiated with protons, X-rays, and γ rays. Hence, ionizing and non-ionizing effects are investigated for these avalanche sensors, and differences compared to pixels of standard image sensors are highlighted. Subsequently, the characteristics of defects induced by the creation of interface traps between oxides and silicon and atomic displacement damage in the substrate are examined, including the presence of Random Telegraph Signal (RTS) behaviors. Finally, the nature of these defects is identified through isochronal annealing after irradiations of the SPAD arrays using the three different radiation types mentioned above
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Books on the topic "Diodes à avalanche à photon unique"

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Dandin, Marc, Nicole McFarlane, Md Sakibur Sajal, Fahimeh Dehghandehnavi, and Babak Nouri. Single-Photon Avalanche Diodes and Photon Counting Systems. Cham: Springer Nature Switzerland, 2025. http://dx.doi.org/10.1007/978-3-031-64334-7.

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Dolgos, Denis. Full-band Monte Carlo simulation of single photon avalanche diodes. Konstanz: Hartung-Gorre Verlag, 2012.

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Dandin, Marc, Nicole McFarlane, Sakibur Sajal, Fahimeh Dehghandehnavi, and Babak Nouri. Single-Photon Avalanche Diodes and Photon Counting Systems: From Phototransduction to Circuit Architecture. Springer, 2024.

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Wright, A. G. Why photomultipliers? Oxford University Press, 2017. http://dx.doi.org/10.1093/oso/9780199565092.003.0001.

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Photon detectors transform information, carried by light, to an electrical analogue. Signals contain information on the time of occurrence and the intensity in terms of the number of photons involved. Photon rates may be constant with time, slowly varying, or transient in the form of pulses. The time response is specified in terms of some property of the pulse shape, such as its rise time, or it may be expressed in terms of bandwidth. Light detector applications fall into two categories: imaging and non-imaging; however, only the latter are considered. Detectors can be further divided into vacuum and solid state devices. Vacuum devices include photomultipliers (PMTs), microchannel plate PMTs (MCPPMTs), and hybrid devices in which a silicon device replaces the discrete dynode multiplier. PIN diodes, avalanche photodiodes (APDs), pixelated silicon PMTs (SiPMs), and charge-coupled devices (CCDs) are examples of solid state light detectors.
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Book chapters on the topic "Diodes à avalanche à photon unique"

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Dandin, Marc, Nicole McFarlane, Md Sakibur Sajal, Fahimeh Dehghandehnavi, and Babak Nouri. "Perimeter-Gated Single-Photon Avalanche Diodes." In Single-Photon Avalanche Diodes and Photon Counting Systems, 21–50. Cham: Springer Nature Switzerland, 2024. http://dx.doi.org/10.1007/978-3-031-64334-7_2.

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Charbon, Edoardo, and Matthew W. Fishburn. "Monolithic Single-Photon Avalanche Diodes: SPADs." In Springer Series in Optical Sciences, 123–57. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-18443-7_7.

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Dandin, Marc, Nicole McFarlane, Md Sakibur Sajal, Fahimeh Dehghandehnavi, and Babak Nouri. "Perimeter-Gated Single-Photon Avalanche Diode Imagers." In Single-Photon Avalanche Diodes and Photon Counting Systems, 73–89. Cham: Springer Nature Switzerland, 2024. http://dx.doi.org/10.1007/978-3-031-64334-7_4.

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Dandin, Marc, Nicole McFarlane, Md Sakibur Sajal, Fahimeh Dehghandehnavi, and Babak Nouri. "Optoelectronic Characteristics of Perimeter-Gated Single-Photon Avalanche Diodes." In Single-Photon Avalanche Diodes and Photon Counting Systems, 51–72. Cham: Springer Nature Switzerland, 2024. http://dx.doi.org/10.1007/978-3-031-64334-7_3.

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Dandin, Marc, Nicole McFarlane, Md Sakibur Sajal, Fahimeh Dehghandehnavi, and Babak Nouri. "Perimeter-Gated Single-Photon Avalanche Diode Arrays as Hardware Security Primitives." In Single-Photon Avalanche Diodes and Photon Counting Systems, 91–116. Cham: Springer Nature Switzerland, 2024. http://dx.doi.org/10.1007/978-3-031-64334-7_5.

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Dandin, Marc, Nicole McFarlane, Md Sakibur Sajal, Fahimeh Dehghandehnavi, and Babak Nouri. "Conclusions, Contributions, and Future Work." In Single-Photon Avalanche Diodes and Photon Counting Systems, 179–82. Cham: Springer Nature Switzerland, 2024. http://dx.doi.org/10.1007/978-3-031-64334-7_9.

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Dandin, Marc, Nicole McFarlane, Md Sakibur Sajal, Fahimeh Dehghandehnavi, and Babak Nouri. "Silicon Photomultipliers." In Single-Photon Avalanche Diodes and Photon Counting Systems, 117–34. Cham: Springer Nature Switzerland, 2024. http://dx.doi.org/10.1007/978-3-031-64334-7_6.

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Dandin, Marc, Nicole McFarlane, Md Sakibur Sajal, Fahimeh Dehghandehnavi, and Babak Nouri. "Dead Time Correction in Single-Photon Avalanche Diode Front Ends." In Single-Photon Avalanche Diodes and Photon Counting Systems, 165–78. Cham: Springer Nature Switzerland, 2024. http://dx.doi.org/10.1007/978-3-031-64334-7_8.

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Dandin, Marc, Nicole McFarlane, Md Sakibur Sajal, Fahimeh Dehghandehnavi, and Babak Nouri. "Readout Strategies and Asynchronous Architectures." In Single-Photon Avalanche Diodes and Photon Counting Systems, 135–63. Cham: Springer Nature Switzerland, 2024. http://dx.doi.org/10.1007/978-3-031-64334-7_7.

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Dandin, Marc, Nicole McFarlane, Md Sakibur Sajal, Fahimeh Dehghandehnavi, and Babak Nouri. "Fundamentals of Phototransduction in Semiconductors." In Single-Photon Avalanche Diodes and Photon Counting Systems, 1–19. Cham: Springer Nature Switzerland, 2024. http://dx.doi.org/10.1007/978-3-031-64334-7_1.

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Conference papers on the topic "Diodes à avalanche à photon unique"

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Fu, Jing, Anran Guo, Hongbo Zhang, Guowei Li, Huaping Ma, Ruizhi Li, and Yuwei Chen. "Modeling of Silicon Single-Photon Avalanche Diodes for Process and Design Optimization." In 2024 IEEE 17th International Conference on Solid-State & Integrated Circuit Technology (ICSICT), 1–3. IEEE, 2024. https://doi.org/10.1109/icsict62049.2024.10831093.

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Cho, Youngmin, and Jinwook Burm. "Calibrating the Dark Count Rate of Single Photon Avalanche Diodes Using Linear Regression." In 2024 21st International SoC Design Conference (ISOCC), 296–97. IEEE, 2024. http://dx.doi.org/10.1109/isocc62682.2024.10762487.

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Park, Eunsung, Woo-Young Choi, and Myung-Jae Lee. "Optical and Electrical Characterization of Single-Photon Avalanche Diodes Fabricated in CMOS Technology." In 2024 IEEE International Conference on Consumer Electronics-Asia (ICCE-Asia), 1–3. IEEE, 2024. https://doi.org/10.1109/icce-asia63397.2024.10773713.

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Louis, Thomas A. "Investigation of Picosecond Time-Resolved Photoluminescence in Gallium Arsenide with 3-μm Spatial Resolution." In Picosecond Electronics and Optoelectronics. Washington, D.C.: Optica Publishing Group, 1989. http://dx.doi.org/10.1364/peo.1989.hsmt39.

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A novel instrument has recently been developed for picosecond time-resolved photoluminescence (TRPL) investigation of GaAs with 3 μm spatial resolution : the Photoluminescence Lifetime Microscope Spectrometer (PLμS). The PLμS is based on time-correlated single photon counting (TCSPC) with a single photon avalanche diode (SPAD) detector. Sensitivity of the PLμS, especially in the near infrared wavelength region (800-1000nm), is several orders of magnitude better than for synchroscan streak cameras. A signal-to-noise ratio of better than 1000:1 is typically obtained from a GaAs sample region of 3 μm diameter at room temperature and at excess carrier densities (at peak excitation) as low as 1015cm-3. As a result of the very low optical power requirements, a pulsed diode laser can be used as the excitation source. All signals are conveniently handled via optical fiber, which makes the PLμS a unique instrument for routine assessment of semiconductor materials and devices in an industrial environment.
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Campbell, Joe C. "Single photon avalanche diodes." In 2013 71st Annual Device Research Conference (DRC). IEEE, 2013. http://dx.doi.org/10.1109/drc.2013.6633855.

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Itzler, Mark A., Xudong Jiang, Bruce Nyman, Rafael Ben-Michael, and Krystyna Slomkowski. "InP-based single photon avalanche diodes." In LEOS 2008 - 21st Annual Meeting of the IEEE Lasers and Electro-Optics Society (LEOS 2008). IEEE, 2008. http://dx.doi.org/10.1109/leos.2008.4688571.

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Pellegrini, S., and B. Rae. "Fully industrialised single photon avalanche diodes." In SPIE Commercial + Scientific Sensing and Imaging, edited by Mark A. Itzler and Joe C. Campbell. SPIE, 2017. http://dx.doi.org/10.1117/12.2264364.

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Anti, Michele, Fabio Acerbi, Alberto Tosi, and Franco Zappa. "Integrated simulator for single photon avalanche diodes." In 2011 11th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD). IEEE, 2011. http://dx.doi.org/10.1109/nusod.2011.6041130.

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Mahnkopf, S., A. Giudice, D. Demmer, T. Haslett, and G. Simmerle. "Optoelectronic packaging of single photon avalanche diodes." In SPIE LASE, edited by Alexei L. Glebov and Paul O. Leisher. SPIE, 2017. http://dx.doi.org/10.1117/12.2255556.

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Marisaldi, Martino, Piera Maccagnani, Francesco Moscatelli, Claudio Labanti, Fabio Fuschino, Michela Prest, Alessandro Berra, et al. "Single Photon Avalanche Diodes for space applications." In 2011 IEEE Nuclear Science Symposium and Medical Imaging Conference (2011 NSS/MIC). IEEE, 2011. http://dx.doi.org/10.1109/nssmic.2011.6154465.

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