Relevant bibliographies by topics / Diodes

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Diodes'

Author: Grafiati
Published: 4 June 2021
Last updated: 7 September 2024

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Journal articles on the topic "Diodes"

1

Zhou, Shi Yuan, Kai Zhang, Dinguo Xiao, Chun Guang Xu, and Bo Yang. "Application of Silicon Carbide Diode in Ultrasound High Voltage Pulse Protection Circuit." Applied Mechanics and Materials 290 (February 2013): 115–19. http://dx.doi.org/10.4028/www.scientific.net/amm.290.115.

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SiC diode (Silicon Carbide Diode) is a newly commercial available Schottky barrier diode with zero reverse-recovery-time, which is a perfect candidate for fabricating high voltage pulse protection circuit in ultrasonic transceiver system. With SiC diode’s high performance, the circuit can deliver 400 volts or higher voltage protection level, which is not an easy job for other kind of diodes. In this article, the theory of diode-bridge protection circuit is briefly discussed, and a SiC diode-bridge protection circuit was fabricated, and some experiments has been done to verify the feasibility of using SiC diodes in diode-bridge protection circuit.
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Afanasyev, Alexey V., Boris V. Ivanov, Vladimir A. Ilyin, Alexey F. Kardo-Sysoev, Maria A. Kuznetsova, and Victor V. Luchinin. "Superfast Drift Step Recovery Diodes (DSRDs) and Vacuum Field Emission Diodes Based on 4H-SiC." Materials Science Forum 740-742 (January 2013): 1010–13. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.1010.

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This paper presents the results of research and development of two types diode structures based on wide bandgap 4H-SiC: drift step recovery diodes (DSRDs) and field emission diodes (FED). Diodes’ structure and manufacturing methods are reviewed. Diode’s characteristics were obtained (static current-voltage characteristics and capacitor-voltage characteristic, switching properties’ characteristics for DSRDs). Field emission 4H-SiC structures illustrated high (≥102 А/сm2) current densities at electric field intensity of approximately 10V/um. 4H-SiC DSRDs in the generator structure with a single oscillating contour allowed to form sub nanosecond impulses at a load 50 Ohm and 1,5-2kV amplitude for a single diode (current density at V=2kV J= 4•103 А/сm2),what is significantly higher than similar DSRD’s parameters obtained for silicon.
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Salman, RK. "Research note: Light emitting diodes as solar power resources." Lighting Research & Technology 51, no. 3 (March 19, 2018): 476–83. http://dx.doi.org/10.1177/1477153518764211.

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This paper investigates the possibility of recycling light emitting diodes from damaged electronic devices, and using them in a similar way to photovoltaic cells in order to reduce environmental pollution. The study used a number of tests with a variety of different parameters for measuring the capability for light emitting diodes to harvest the sun’s rays and to convert them into a useful form of electrical power. The different configurations involved variations of light emitting diode wavelength and number, as well as the connection types between the light emitting diodes (series and parallel) and the angle of incidence of the sun’s rays to the light emitting diode’s base. The results showed promising voltage data for parallel-connected light emitting diodes of lemon (yellow-green) and green colour. The variations in voltage produced by tilting the light emitting diode’s base exhibited similar behaviour to that seen in solar panels. The power that was harvested from the light emitting diodes was extremely low, but the voltage gains showed promising trends that could be employed in useful applications. Hence, light emitting diodes could be re-used to reduce environmental pollution and thus to contribute towards environmental enhancement.
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Bumai, Yurii, Aleh Vaskou, and Valerii Kononenko. "Measurement and Analysis of Thermal Parameters and Efficiency of Laser Heterostructures and Light-Emitting Diodes." Metrology and Measurement Systems 17, no. 1 (January 1, 2010): 39–45. http://dx.doi.org/10.2478/v10178-010-0004-x.

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Measurement and Analysis of Thermal Parameters and Efficiency of Laser Heterostructures and Light-Emitting DiodesA thermal resistance characterization of semiconductor quantum-well heterolasers in the AlGaInAs-AlGaAs system (λst≈ 0.8 μm), GaSb-based laser diodes (λst≈ 2 μm), and power GaN light-emitting diodes (visible spectral region) was performed. The characterization consists in investigations of transient electrical processes in the diode sources under heating by direct current. The time dependence of the heating temperature of the active region of a source ΔT(t), calculated from direct bias change, is analyzed using a thermalRTCTequivalent circuit (the Foster and Cauer models), whereRTis the thermal resistance andCTis the heat capacity of the source elements and external heat sink. By the developed method, thermal resistances of internal elements of the heterolasers and light-emitting diodes are determined. The dominant contribution of a die attach layer to the internal thermal resistance of both heterolaser sources and light-emitting diodes is observed. Based on the performed thermal characterization, the dependence of the optical power efficiency on current for the laser diodes is determined.
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Min, Seong-Ji, Michael A. Schweitz, Ngoc Thi Nguyen, and Sang-Mo Koo. "Comparison of Temperature Sensing Performance of 4H-SiC Schottky Barrier Diodes, Junction Barrier Schottky Diodes, and PiN Diodes." Journal of Nanoscience and Nanotechnology 21, no. 3 (March 1, 2021): 2001–4. http://dx.doi.org/10.1166/jnn.2021.18934.

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We present a comparison between the thermal sensing behaviors of 4H-SiC Schottky barrier diodes, junction barrier Schottky diodes, and PiN diodes in a temperature range from 293 K to 573 K. The thermal sensitivity of the devices was calculated from the slope of the forward voltage versus temperature plot. At a forward current of 10 μA, the PiN diode presented the highest sensitivity peak (4.11 mV K−1), compared to the peaks of the junction barrier Schottky diode and the Schottky barrier diode (2.1 mV K−1 and 1.9 mV K−1, respectively). The minimum temperature errors of the PiN and junction barrier Schottky diodes were 0.365 K and 0.565 K, respectively, for a forward current of 80 μA±10 μA. The corresponding value for the Schottky barrier diode was 0.985 K for a forward current of 150 μA±10 μA. In contrast to Schottky diodes, the PiN diode presents a lower increase in saturation current with temperature. Therefore, the nonlinear contribution of the saturation current with respect to the forward current is negligible; this contributes to the higher sensitivity of the PiN diode, allowing for the design and fabrication of highly linear sensors that can operate in a wider temperature range than the other two diode types.
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Weikle, Robert M., S. Nadri, C. M. Moore, N. D. Sauber, L. Xie, M. E. Cyberey, N. Scott Barker, A. W. Lichtenberger, and M. Zebarjadi. "Thermal Characterization of Quasi-Vertical GaAs Schottky Diodes Integrated on Silicon Using Thermoreflectance and Electrical Transient Measurements." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2019, DPC (January 1, 2019): 001293–310. http://dx.doi.org/10.4071/2380-4491-2019-dpc-presentation_tha3_009.

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Thermal management and design have been understood, for many years, as critical factors in the implementation of submillimeter-wave Schottky-diode-based circuits and instruments. Removal of heat is particularly important for frequency multipliers, as these circuits generally exhibit low-to-modest conversion efficiencies, and are usually driven with high-power sources to achieve usable output power in the submillimeter-wave region of the spectrum. Elevated diode junction temperature due to inadequate heat sinking is known to degrade performance, accelerate aging effects (for example, due to electromigration, ohmic contact deterioration, or thermally-induced stress), and can ultimately lead to device failure. The relatively-low thermal conductivity of GaAs (the predominant material technology for submillimeter-wave diodes), coupled with restrictions on diode anode size and geometry needed to minimize parasitics and achieve the device impedances required for high-frequency operation, present significant challenges and trade-offs between electrical and thermal designs of these devices. Recognition that heating is a major factor limiting efficiency and output power has prompted a number of approaches to mitigate excessive temperature rise in the junction of planar Schottky diodes, including the use of AlN or diamond as low-loss substrates that act as heat spreaders. A new diode topology, based on a quasi-vertical geometry that is realized through heterogeneous integration of GaAs with high-resistivity silicon, was recently developed at the University of Virginia for submillimeter-wave applications. Unlike planar diodes, the device structure of the quasi-vertical diode consists of a metal contact that underlies the diode's anode and epitaxial mesa, thus providing a large-area ohmic cathode contact that also serves as an integrated heat sink. Measurement of high-efficiency multipliers based on this technology suggest the quasi-vertical architecture provides an effective approach for heat removal and thermal management in Schottky diodes. This paper presents the first results reporting thermal performances of terahertz quasi-vertical GaAs Schottky diodes integrated on silicon. The devices are characterized using a thermoreflectance measurement technique, a method based on the change in refractive index, and therefore surface reflectivity, with changes in temperature. Heating and cooling temperature profiles and 2-D temperature maps are obtained for 3.5 micron and 5.5 micron diameter diodes. From these measurements, the device thermal resistances, junction temperatures, and thermal time-constants are extracted. Equivalent thermal circuit and finite element models are developed to study the device geometry, and extract material thermal parameters. The devices are also characterized using an electrical transient method, and the temperature and cooling transients found from this technique are found to be comparable to those obtained from thermoreflectance measurements. The quasi-vertical diodes studied in this work are shown to demonstrate a faster transient thermal response compared to flip-chip bonded terahertz diodes reported in the literature.
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Bayer, Christoph Friedrich, Eberhard Bär, Birgit Kallinger, and Patrick Berwian. "Thermal Simulation of Paralleled SiC PiN Diodes in a Module Designed for 6.5 kV/1 kA." Materials Science Forum 821-823 (June 2015): 616–19. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.616.

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This work shows thermal simulations of a package of 48/96 high-voltage (6.5 kV/1 kA) PiN diodes. A temperature dependent heat generation for a forward voltage of 3.6 V with a realistic heat generating volume in the diode of (2.7x2.7x0.01) mm3 was used. The thermal coupling of two diodes was determined to be less than 1 % for a distance between the diodes of 10 mm. The temperature distribution for the entire module has been studied for two different ceramic insulating materials, AlN and Al2O3, as well as for two numbers of diodes, 48 and 96. This led to a maximum temperature of 106 °C/118 °C (AlN, 48/96 diodes) and 123 °C/144 °C (Al2O3, 48/96 diodes). Assuming a constant applied voltage, a variance of ±0.5 V of the characteristic curve (forward voltage versus current) due to variations in the production process was considered fork single diodes. For a shift of +0.5 V for a single diode, the maximum temperature difference to the cooler temperature becomes approximately twice the original difference. Additionally, the operation under constant current (7.1 A, 10.2 A, 14.2 A) was studied including single diode failure. For single diode failure, the resulting change of the maximum temperature would be less than 3 %.
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Son, Minoh, and Changkun Park. "Cell-Based ESD Diodes with a Zigzag-Shaped Layout to Enhance the ESD Survival Level." Journal of Circuits, Systems and Computers 26, no. 02 (November 3, 2016): 1750023. http://dx.doi.org/10.1142/s0218126617500232.

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In this study, we propose cell-based diodes which are laid out with a zigzag shape as electrostatic discharge (ESD) protection elements to enhance the ESD survival level of the diodes. Generally, diodes are regarded as simple ESD protection devices in integrated circuits. During ESD events, the P–N junction of the ESD diode acts as a thermal source. In this study, we investigate a distributed layout method which relies on a cell-based ESD diode to prevent an excessive increase in the temperature at the P–N junction. However, although the distributed layout enhances the ESD survival levels of the ESD diode, the required area increases compared that of a typical layout. Thus, we propose a zigzag layout technique for the cell-based diode to reduce the area and obtain a high ESD survival level. To verify the feasibility of the zigzag layout techniques for cell-based diodes, we designed ESD diodes using 110[Formula: see text]nm RF CMOS technology. The experimental results successfully demonstrate the feasibility of the proposed method.
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Wang, Heng, Gaurav Jayaswal, Geetanjali Deokar, John Stearns, Pedro M. F. J. Costa, Garret Moddel, and Atif Shamim. "CVD-Grown Monolayer Graphene-Based Geometric Diode for THz Rectennas." Nanomaterials 11, no. 8 (August 2, 2021): 1986. http://dx.doi.org/10.3390/nano11081986.

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For THz rectennas, ultra-fast diodes are required. While the metal–insulator–metal (MIM) diode has been investigated in recent years, it suffers from large resistance and capacitance, as well as a low cut-off frequency. Alternatively, a geometric diode can be used, which is more suitable due to its planar structure. However, there is only one report of a THz geometric diode based on a monolayer graphene. It is based on exfoliated graphene, and thus, it is not suitable for mass production. In this work, we demonstrate chemical vapor deposition (CVD)-grown monolayer graphene based geometric diodes, which are mass-producible. The diode’s performance has been studied experimentally by varying the neck widths from 250–50 nm, the latter being the smallest reported neck width for a graphene geometric diode. It was observed that by decreasing the neck widths, the diode parameters such as asymmetry, nonlinearity, zero-bias resistance, and responsivity increased within the range studied. For the 50 nm neck width diode, the asymmetry ratio was 1.40 for an applied voltage ranging from −2 V to 2 V, and the zero-bias responsivity was 0.0628 A/W. The performance of the diode was also verified through particle-in-cell Monte Carlo simulations, which showed that the simulated current-voltage characteristics were consistent with our experimental results.
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Liu, Yang, Bo Zhang, Yinian Feng, Xiaolin Lv, Dongfeng Ji, Zhongqian Niu, Yilin Yang, Xiangyang Zhao, and Yong Fan. "Development of 340-GHz Transceiver Front End Based on GaAs Monolithic Integration Technology for THz Active Imaging Array." Applied Sciences 10, no. 21 (November 9, 2020): 7924. http://dx.doi.org/10.3390/app10217924.

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Frequency multipliers and mixers based on Schottky barrier diodes (SBDs) are widely used in terahertz (THz) imaging applications. However, they still face obstacles, such as poor performance consistency caused by discrete flip-chip diodes, as well as low efficiency and large receiving noise temperature. It is very hard to meet the requirement of multiple channels in THz imaging array. In order to solve this problem, 12-μm-thick gallium arsenide (GaAs) monolithic integrated technology was adopted. In the process, the diode chip shared the same GaAs substrate with the transmission line, and the diode’s pads were seamlessly connected to the transmission line without using silver glue. A three-dimensional (3D) electromagnetic (EM) model of the diode chip was established in Ansys High Frequency Structure Simulator (HFSS) to accurately characterize the parasitic parameters. Based on the model, by quantitatively analyzing the influence of the surface channel width and the diode anode junction area on the best efficiency, the final parameters and dimensions of the diode were further optimized and determined. Finally, three 0.34 THz triplers and subharmonic mixers (SHMs) were manufactured, assembled, and measured for demonstration, all of which comprised a waveguide housing, a GaAs circuit integrated with diodes, and other external connectors. Experimental results show that all the triplers and SHMs had great performance consistency. Typically, when the input power was 100 mW, the output power of the THz tripler was greater than 1 mW in the frequency range of 324 GHz to 352 GHz, and a peak efficiency of 6.8% was achieved at 338 GHz. The THz SHM exhibited quite a low double sideband (DSB) noise temperature of 900~1500 K and a DSB conversion loss of 6.9~9 dB over the frequency range of 325~352 GHz. It is indicated that the GaAs monolithic integrated process, diodes modeling, and circuits simulation method in this paper provide an effective way to design THz frequency multiplier and mixer circuits.
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Dissertations / Theses on the topic "Diodes"

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Mohib, Abdul. "Molecular diodes." Thesis, Cranfield University, 2006. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.439279.

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ECKLE, MICHEL. "Diodes organiques electroluminescentes." Université Louis Pasteur (Strasbourg) (1971-2008), 2001. http://www.theses.fr/2001STR13008.

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Le developpement de l'electroluminescence de couches minces composees de matieres organiques debute dans les annees 80 avec les travaux de tang et van slyke. Plus tard la technique d'auto-assemblage couche par couche permet l'incorporation de polymeres conducteurs dans les films minces. Le poly(p-phenylene vinylene) (ppv) est le polymere electroluminescent le plus utilise dans les etudes portant sur les diodes organiques polymeriques. Son incorporation dans l'architecture du film se fait via son precurseur cationique non conjugue et soluble qui est converti in-situ en la forme finale du polymere conjugue. Nous nous sommes attaches a montrer que la variation de l'architecture interne de ces films pouvait avoir une influence sur le comportement optoelectronique de ces diodes. Ainsi, en partant d'un systeme connu (ito/pei/(ppv/pma) 2 0/al), nous avons incorpore divers materiaux (polyaniline sulfonee, nanoparticules de tio 2, montmorillonite). La presence de poly(aniline sulfonee) (pani) connue pour ses proprietes injectrices de trous, augmente l'efficacite des diodes par rapport au systeme reference. L'interpenetration entre les couches de ppv et de pani est un facteur determinant au niveau du transport de charges a l'interieur du film. L'incorporation de tio 2 nous a montre clairement que la nature cet oxyde influe de maniere significative les performances du systeme puisqu'en presence de quasi-tio 2 cristallin aucune electroluminescence n'a ete detectee. Des nanoparticules amorphes augmentent l'efficacite des diodes en modifiant les proprietes de transport des charges et la probabilite de recombinaison electron-trou. Enfin, l'introduction de montmorillonite provoque un effet de compartimentation par rapport au transport d'ions demontre par reflectivite de neutrons et par spectroscopie uv-visible. D'autre part les caracteristiques electroluminescentes des diodes ont evolue significativement en presence du mineral argileux. Le positionnement et le nombre de couches d'argile jouent un role determinant, et l'efficacite du systeme augmente avec ce nombre de couches. Nous pensons que les charges circulant dans le film peuvent subir un ralentissement ou une deviation engendres par la couche de mineral isolante. Nous avons donc clairement l'influence de l'architecture interne sur les caracteristiques electroluminescentes des diodes organiques a travers l'incorporation de divers materiaux.
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Belhadj-Yahya, Chedly. "Evaluation of the quantum well tunneling diode and the quantum electron-wave interference diode as high speed devices." Diss., Georgia Institute of Technology, 1992. http://hdl.handle.net/1853/15348.

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Lochner, Zachary Meyer. "Green light emitting diodes and laser diodes grown by metalorganic chemical vapor deposition." Thesis, Georgia Institute of Technology, 2010. http://hdl.handle.net/1853/33827.

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This thesis describes the development of III-Nitride materials for light emitting applications. The goals of this research were to create and optimize a green light emitting diode (LED) and laser diode (LD). Metalorganic chemical vapor deposition (MOCVD) was the technique used to grow the epitaxial structures for these devices. The active regions of III-Nitride based LEDs are composed of InₓGa₁₋ₓN, the bandgap of which can be tuned to attain the desired wavelength depending on the percent composition of Indium. An issue with this design is that the optimal growth temperature of InGaN is lower than that of GaN, making the growth temperature of the top p-layers critical to the device performance. Thus, an InGaN:Mg layer was used as the hole injection and p-contact layers for a green led, which can be grown at a lower temperature than GaN:Mg in order to maintain the integrity of the active region. However, the use of InGaN comes with its own set of drawbacks, specifically the formation of V-defects. Several methods were investigated to suppress these defects such as graded p-layers, short period supper lattices, and native GaN substrates. As a result, LEDs emitting at ~532 nm were realized. The epitaxial structure for a III-Nitride LD is more complicated than that of an LED, and so it faces many of the same technical challenges and then some. Strain engineering and defect reduction were the primary focuses of optimization in this study. Superlattice based cladding layers, native GaN substrates, InGaN waveguides, and doping optimization were all utilized to lower the probability of defect formation. This thesis reports on the realization of a 454 nm LD, with higher wavelength devices to follow the same developmental path.
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Stevenson, Stuart G. "Dendrimer light-emitting diodes." Thesis, St Andrews, 2008. http://hdl.handle.net/10023/581.

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Dussaigne, Amélie. "Diodes électroluminescentes blanches monolithiques." Phd thesis, Université de Nice Sophia-Antipolis, 2005. http://tel.archives-ouvertes.fr/tel-00332387.

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Ce travail concerne la croissance par épitaxie sous jets moléculaires avec NH3 comme source d'azote de diodes électroluminescentes (DELs) blanches monolithiques. La méthode proposée au laboratoire consiste à insérer dans la zone active de la DEL des puits quantiques (Ga,In)N émettant dans le bleu et le jaune. Bien que la concentration en In de l'alliage InxGa1-xN soit limitée à 20-25%, la présence d'un champ électrique interne dans les hétérostructures nitrures permet d'obtenir des longueurs d'onde balayant tout le spectre visible. Malheureusement, ce champ électrique diminue aussi la force d'oscillateur de puits quantiques de largeur de plus de 2nm. Ainsi, l'efficacité radiative de puits quantiques émettant dans le jaune est faible comparé à un puits quantique émettant dans le bleu. L'émission dans le jaune pose donc problème et il nous a fallu tenté de contrebalancer les effets du champ électrique afin d'accroître le rendement quantique des puits larges. D'autre part, la puissance des DELs EJM est faible par rapport à celles épitaxiées en EPVOM. Une des grandes différences entre ces deux techniques est la croissance du GaN de type p. Différents paramètres ont été testés afin de déterminer les conditions de croissance adéquates à l'épitaxie du GaN de type p de bonne qualité optoélectronique. Finalement, ces différents affinages ont été vérifiés par l'élaboration de DELs et en particulier d'une DEL blanche monolithique à large spectre.
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Brezeanu, Mihai. "Diamond Schottky barrier diodes." Thesis, University of Cambridge, 2008. https://www.repository.cam.ac.uk/handle/1810/226757.

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Research on wide band gap semiconductors suitable for power electronicdevices has spread rapidly in the last decade. The remarkable results exhibited bysilicon carbide (SiC) Schottky batTier diodes (SBDs), commercially available since2001, showed the potential of wide band gap semiconductors for replacing silicon (Si)in the range of medium to high voltage applications, where high frequency operationis required. With superior physical and electrical properties, diamond became apotential competitor to SiC soon after Element Six reported in 2002 the successfulsynthesis of single crystal plasma deposited diamond with high catTier mobility. This thesis discusses the remarkable properties of diamond and introducesseveral device structures suitable for power electronics. The calculation of severalfigures of merit emphasize the advantages of diamond with respect to silicon andother wide band gap semiconductors and clearly identifies the areas where its impactwould be most significant. Information regarding the first synthesis of diamond,which took place back in 1954, together with data regarding the modern technologicalprocess which leads nowadays to high-quality diamond crystals suitable for electronicdevices, are reviewed. Models regarding the incomplete ionization of atomic dopantsand the variation of catTier mobility with doping level and temperature have beenelaborated and included in numerical simulators. The study introduces the novel diamond M-i-P Schottky diode, a version ofpower Schottky diode which takes advantage of the extremely high intrinsic holemobility. The structure overcomes the drawback induced by the high activationenergies of acceptor dopants in diamond which yield poor hole concentration at roomtemperature. The complex shape of the on-state characteristic exhibited by diamondM-i-P Schottky structures is thoroughly investigated by means of experimentalresults, numerical simulations and theoretical considerations. The fabrication of a ramp oxide termination on a diamond device is for thefirst time reported in this thesis. Both experimental and simulated results show thepotential of this termination structure, previously built on Si and SiC power devices. A comprehensive comparison between the ramp oxide and two other versions of thefield plate termination concept, the single step and the three-step structures, has beenperformed, considering aspects such as electrical performance, occupied area,complexity of technological process and cost. Based on experimental results presented in this study, together withpredictions made via simulations and theoretical models, it is concluded that diamondM-i-P Schottky diodes have the ability to deliver significantly higher performancecompared to that of SiC SBDs if issues such as material defects, Schottky contactformation and measurement of reliable ionization coefficients are carefully addressedin the near future.
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Lau, Fat Kit. "Tapered waveguide laser diodes." Thesis, University of Cambridge, 2009. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.611648.

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Snaith, Henry James. "Polymer based photovoltaic diodes." Thesis, University of Cambridge, 2005. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.614761.

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Choi, Wai Kit. "Organic light-emitting diodes." HKBU Institutional Repository, 1999. http://repository.hkbu.edu.hk/etd_ra/190.

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Books on the topic "Diodes"

1

Semiconductors, ITT. Diodes, zener diodes, rectifiers. Freiburg: ITT Semiconductors, 1991.

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Semiconductors, ITT. Diodes, zener diodes, rectifiers. Freibourg: ITT Semiconductors, 1987.

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Rectifier, International. Schottky diodes. EL Segundo, CA: International Rectifier, 1992.

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(Firm), Knovel, ed. Understanding modern transistors and diodes. Cambridge: Cambridge University Press, 2010.

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(Firm), Harris Semiconductor. MCT/IGBTs/diodes. Melbourne, Florida: Harris Semiconductor, 1994.

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Li, Jinmin, and G. Q. Zhang, eds. Light-Emitting Diodes. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-319-99211-2.

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Electronic, Telefunken. Diodes data book. Heilbron, W.Germany: Telefunken Electronic, 1988.

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Schubert, E. Fred. Light-Emitting Diodes. 2nd ed. Leiden: Cambridge University Press, 2006.

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Semiconductors, Philips. Diodes: Data handbook. Eindhoven: Philips Semiconductors, 1992.

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Jens, Buus, ed. Tunable laser diodes. Boston: Artech House, 1998.

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Book chapters on the topic "Diodes"

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Warnes, Lionel. "Diodes." In Electronic and Electrical Engineering, 136–59. London: Macmillan Education UK, 1998. http://dx.doi.org/10.1007/978-1-349-15052-6_7.

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Warnes, Lionel. "Diodes." In Electronic and Electrical Engineering, 137–60. London: Macmillan Education UK, 2003. http://dx.doi.org/10.1007/978-0-230-21633-4_7.

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Suits, Bryan H. "Diodes." In Electronics for Physicists, 121–41. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-39088-4_6.

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Barnes, John R. "Diodes." In Robust Electronic Design Reference Book, 321–50. New York, NY: Springer US, 2004. http://dx.doi.org/10.1007/1-4020-7830-7_16.

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Grundmann, Marius. "Diodes." In Graduate Texts in Physics, 519–98. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-13884-3_20.

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Warnes, Lionel. "Diodes." In Analogue and Digital Electronics, 49–87. London: Macmillan Education UK, 1998. http://dx.doi.org/10.1007/978-1-349-14037-4_2.

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Robinson, Kevin. "Diodes." In Practical Audio Electronics, 275–90. Abingdon, Oxon : Routledge, an imprint of the Taylor & Francis Group, 2020.: Focal Press, 2020. http://dx.doi.org/10.4324/9780429343056-16.

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Warnes, L. A. A. "Diodes." In Electronic and Electrical Engineering, 136–55. London: Macmillan Education UK, 1994. http://dx.doi.org/10.1007/978-1-349-13012-2_7.

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van de Roer, Theo G. "Diodes." In Microwave Electronic Devices, 126–61. Boston, MA: Springer US, 1994. http://dx.doi.org/10.1007/978-1-4615-2500-4_5.

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Grundmann, Marius. "Diodes." In Graduate Texts in Physics, 517–88. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-51569-0_21.

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Conference papers on the topic "Diodes"

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Aharoni, A., J. W. Goodman, and Y. Amitai. "An efficient holographic collimator for 820 nm laser diodes." In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1992. http://dx.doi.org/10.1364/oam.1992.mcc1.

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High-quality collimation and focusing of laser diode beams is hindered by their asymmetric divergence and elliptical beam section. These result from the large aspect ratio of the source. In gain-guided diode lasers the beam also suffers astigmatism due to the lensing effects of the nonuniform current porofile. A holographic correcting and collimating element for such diodes is desirable for its low mass-production cost and small dimensions. Efficient holograms cannot, however, be recorded directly with the infrared wavelengths of diode lasers, and normally large aberrations and low efficiencies are obtained when recording with shorter wavelengths. Using a recursive holographic method1 we recorded a hologram with blue light that collimates a 820 nm diode beam with low aberrations and high efficiency. This element corrects for the diode's astigmatism and ellipticity and achieves near-diffraction-limited collimation. The design can also alleviate effects due to diode wavelength instability.
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Wu, Wei, Andy G. Lozowski, and Fengxia Wang. "Improved Rectifier Circuit With Backward Diodes for Low Power Source Harvesting." In ASME 2014 Dynamic Systems and Control Conference. American Society of Mechanical Engineers, 2014. http://dx.doi.org/10.1115/dscc2014-6018.

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Most energy harvesting circuits use a Schottky diode rectifier as the first stage in the power conversion system. Schottky diodes are chosen for their low forward-voltage drop which can be as low as 0.15V. Further improvements toward enabling lower voltage sources may be accomplished by using active rectifiers with MOSFET transistors. However such circuits still require an initial start-up phase in which the source voltage needs to exceed the Schottky barrier voltage. As an alternative we propose using backward diodes to build a rectifier with much smaller barrier voltage compared to the Schottky solution. In the past, backward diodes were used in low-voltage diode detectors and are essentially a variation of tunnel diodes. This paper provides both simulation results and an experimental comparative study of the performance of Schottky and backward diodes. The relationship between optimal load, frequency and internal impedance of the voltage source will be discussed as well.
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Özbay, E., and D. M. Bloom. "Triggering with Subpicosecond Jitter Using Resonant Tunneling Diodes." In Picosecond Electronics and Optoelectronics. Washington, D.C.: Optica Publishing Group, 1991. http://dx.doi.org/10.1364/peo.1991.fb1.

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Resonant tunneling diodes (RTD's) with their superior high frequency characteristics, are attractive for high speed applications. As RTD's have terminal characteristics very similar to the Esaki Tunnel Diode, all current high speed applications of Esaki Tunnel Diode are good candidates for the use of new tunneling device. One such application is in high frequency trigger circuits.
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Kim, Jungho, Matthew Whitten, Richard W. Quine, and T. S. Kalkur. "Technique for Measuring Surface Temperature Fluctuations on a Silicon Wafer During Boiling." In ASME 1998 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 1998. http://dx.doi.org/10.1115/imece1998-0653.

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Abstract A method of measuring temperature fluctuations on a silicon wafer during boiling is described. The technique consists of building an array of diodes on a silicon wafer using VLSI techniques, and exploiting the fact that the forward voltage drop across a silicon diode typically is approximately proportional to the inverse of the absolute temperature of the diode. Once a calibration of voltage drop vs. temperature is obtained, the temperature of each diode can be obtained by scanning across the diode array. A 32 × 32 array of diodes (1024 diodes) has been built. Each diode in the array is nominally 100 μm × 100 μm in size. A circuit capable of scanning this diode array at speeds up to 2.5 MHz was also designed, built, and tested. The entire array can be sampled at speeds up to about 2.5 kHz. Construction of the diode array, the circuit, and some preliminary results are described.
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Wang, Junrong, Qi Xiao, Hanbing Ke, Xu Hu, Shaodan Li, and Zhiguo Wei. "Numerical Simulation of Flow Instability in Vortex Diodes." In 2017 25th International Conference on Nuclear Engineering. American Society of Mechanical Engineers, 2017. http://dx.doi.org/10.1115/icone25-66512.

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A vortex diode is used as a highly reliable check-valve in nuclear applications, where it mainly benefits from the intrinsic properties of no moving parts and no leakage. Its basic principle is similar to the diode in an electric circuit. The typical structure of a vortex diode consists of a chamber with axial and tangential ports. When the fluid is injected through the axial port, a simple radial flow in the chamber leads to a relatively low flow resistance. On the other hand, in the reverse flow mode, a strongly swirling vortex can be set up in the chamber, resulting in a very high flow resistance. Several experimental studies found vortex-induced vibration of a vortex diode in the reverse flow mode, where it indicated that the flow was unstable in the vortex diode. This phenomenon may affect the reliability of the vortex diode. However, the mechanism has not been investigated systematically and profoundly. In this paper, 3-D simulations are carried out to help understand the related flow characteristics in the vortex diode. Standard k-ε model was selected for forward flow, while Reynolds stress model was selected for reverse flow. We have found that the results from transient simulations are in good agreement with experimental data. The transient simulations also capture the periodic pressure fluctuation in the vortex diode. Vortex diodes with different structures and geometrical parameters are simulated at different Reynolds number conditions. It is found that the characteristics of the pressure fluctuation are determined by the structure parameters and working conditions of the vortex diode. The flow instability is mainly caused by the asymmetry of the vortex diode. The work presented in this paper will be useful to give better understanding of flows in vortex diodes and to provide some guidance for optimizing the vortex diode.
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Kuan, C. H., Ray-Ming Lin, Shiang-Feng Tang, and Tai-Ping Sun. "Investigation of temperature dependence in the dark current of InAs diode detectors." In The European Conference on Lasers and Electro-Optics. Washington, D.C.: Optica Publishing Group, 1996. http://dx.doi.org/10.1364/cleo_europe.1996.cthi8.

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InAs diode detectors are good for ~3 pm wavelength detection and promising to operate at high temperature (T). In order to decrease the dark current at high T, we have studied the I-V characteristics of the PIN (SI066) and PN (S1135) diodes, and concluded the dominant current mechanics at various T. The two diodes are grown on the InAs N-type substrates. The doping densities of the PIN diode are 3×1017 cm-3 and 6.7×1016 cm-3 for P and N types respectively, and the thickness of the intrinsic layer is 0.14µm. Those of the PN diode are 1 × 1016 cm-3 and 1×1016 cm-3. The mesa shape of the diodes is a circle with a radius of 150µm.
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Brown, E. R., C. D. Parker, T. C. L. G. Sollner, C. I. Huang, and C. E. Stutz. "New Equivalent-Circuit Model for Resonant Tunneling Diodes." In Picosecond Electronics and Optoelectronics. Washington, D.C.: Optica Publishing Group, 1989. http://dx.doi.org/10.1364/peo.1989.trt115.

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It is shown that a "quantum-well inductance" can account for the effect of quasibound-state lifetime on the speed of resonant-tunneling diodes. This is demonstrated theoretically using a linear-response analysis of the conduction current through a double-barrier diode. The inductance is then incorporated into a new equivalent circuit that is used to predict the oscillation characteristics of a diode designed to make the quasibound-state lifetime longer than any other speed-limiting time constant in the device.
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Pavlidis, Georges, James Dallas, Sukwon Choi, Shyh-Chiang Shen, and Samuel Graham. "Steady State and Transient Thermal Characterization of Vertical GaN PIN Diodes." In ASME 2017 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems collocated with the ASME 2017 Conference on Information Storage and Processing Systems. American Society of Mechanical Engineers, 2017. http://dx.doi.org/10.1115/ipack2017-74149.

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In this work, we investigate the thermal response of GaN PIN diodes grown on a sapphire substrate and compare the results to GaN PIN diodes grown on a free standing GaN substrate (FS-GaN). Until now, thermal characterization techniques have been developed to assess the temperature distribution across lateral devices. Raman thermometry has shown to accurately measure the temperature rise across the depth of the GaN layer. Implementing this technique to assess the temperature distribution across the depth of a vertical GaN device is more challenging since a volumetric depth average is measured. The use of TiO2 nanoparticles is shown to overcome this issue and reduce the uncertainty in the peak temperature by probing a surface temperature on top of the device. For the sapphire substrate, an additional temperature rise of about 15 K was seen on the surface of the PIN diode as compared to the average in the bulk. While the steady state thermal measurements show an accurate estimation of the device’s peak temperature, the PIN diodes are normally operated under pulsed conditions and the thermal response of these devices under periodic joule heating must be assessed. A recently developed transient thermoreflectance imaging technique (TTI) is used in this study to monitor transient temperature rise and decay of top metal contact. Under the same biasing conditions, the FS-GaN PIN diode is found to result in less than half the temperature rise obtained by the sapphire substrate diode. Extracting time constants, a longer rise and decay is also observed in the sapphire substrate diode.
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Köck, A., C. Gmachl, E. Gornik, L. Korte, M. Rosenberger, and P. Lustoza de Souza. "Surface mode-coupling in GaAs/AlGaAs laser diodes—a new technique for a single mode laser." In The European Conference on Lasers and Electro-Optics. Washington, D.C.: Optica Publishing Group, 1994. http://dx.doi.org/10.1364/cleo_europe.1994.cthg2.

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Single longitudinal mode laser diodes are of high interest for optical fiber transmission systems. Among the many types of single mode laser diode structures the distributed feedback (DFB) laser diode presently seems to be most promising.
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Ji Hu, O. Alatise, J. A. O. Gonzalez, P. Mawby, and L. Ran. "Avalanche Ruggedness of Parallel Connected Diodes: SiC Schottky Diodes vs Silicon PiN Diodes." In 8th IET International Conference on Power Electronics, Machines and Drives (PEMD 2016). Institution of Engineering and Technology, 2016. http://dx.doi.org/10.1049/cp.2016.0359.

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Reports on the topic "Diodes"

1

MW Dashiell, JF Beausang, H Ehsani, GJ Nichols, DM Depoy, LR Danielson, P Talamo, et al. Quaternary InGaAsSb Thermophotovoltaic Diodes. Office of Scientific and Technical Information (OSTI), March 2006. http://dx.doi.org/10.2172/881293.

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Maby, Edward W., Ronald J. Gutmann, Ted Letavic, and Stephen Wu. Silicon-on-Insulator Pin Diodes. Fort Belvoir, VA: Defense Technical Information Center, December 1987. http://dx.doi.org/10.21236/ada193359.

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Choquette, Kent D., Jr Raftery, and James J. Photonic Crystal Light Emitting Diodes. Fort Belvoir, VA: Defense Technical Information Center, January 2006. http://dx.doi.org/10.21236/ada459348.

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Dowd, James. QA Testing of Si Diodes. Office of Scientific and Technical Information (OSTI), November 2021. http://dx.doi.org/10.2172/1832338.

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Phifer, Carol Celeste. Effects of radiation on laser diodes. Office of Scientific and Technical Information (OSTI), September 2004. http://dx.doi.org/10.2172/919636.

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Ren, F., C. R. Abernathy, and J. D. MacKenzie. Dielectrics for GaN based MIS-diodes. Office of Scientific and Technical Information (OSTI), February 1998. http://dx.doi.org/10.2172/634115.

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Gunshor, Robert L. Electrical Properties of Blue Laser Diodes. Fort Belvoir, VA: Defense Technical Information Center, July 1998. http://dx.doi.org/10.21236/ada361825.

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VAWTER, GREGORY A., ALAN MAR, WENG W. CHOW, and ANDREW A. ALLERMAN. Advanced laser diodes for sensing applications. Office of Scientific and Technical Information (OSTI), January 2000. http://dx.doi.org/10.2172/752016.

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Yang, Zhang. Laser diodes with intensive cooling system. Intellectual Archive, July 2024. http://dx.doi.org/10.32370/iaj.3153.

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Для инфраструктуры умного дома и для её экосистемы в целом вопросы освещения имеют принципиальную важность ; Целый ряд параметров энергетического обеспечения освещения и надёжность конструкций осветительных приборов в условиях нормального функционирования умного дома или умного производственного или офисного помещений требуют решений с применением элементов искусственного интеллекта и искусственных нейронных сетей В свою очередь принятие центрального решения о применении в осветительной системе умного дома , умного производственного помещения , умного складского помещения и умного офисного помещения , - инновационных приборов освещения , открывает целый ряд взаимосвязанных надсистем и подсистем в проектах составных элементов системы освещения ;
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Belensky, Gregory, Leon Shterengas, Dmitry Donetsky, and Sergey Suchalkin. Diode Lasers and Light Emitting Diodes Operating at Room Temperature with Wavelengths Above 3 Micrometers. Fort Belvoir, VA: Defense Technical Information Center, November 2011. http://dx.doi.org/10.21236/ada563915.

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