Books on the topic 'Dielectrics and semiconductors'

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1

1922-, Basov N. G., ed. Fizika diėlektrikov i poluprovodnikov: Izbrannye trudy. Moskva: "Nauka", 1988.

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2

Synorov, V. F. Fizika MDP-struktur: Uchebnoe posobie. Voronezh: Izd-vo Voronezhskogo universiteta, 1989.

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3

Kiselev, V. F. Adsorption processes on semiconductor and dielectric surfaces I. Berlin: Springer-Verlag, 1985.

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4

China) Conference on semiconducting and Insulating Materials (13th 2004 Beijing. 2004 13th International Conference on Semiconducting & Insulating Materials: SIMC-XIII-2004 : September 20-25, 2004, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, People's Republic of China. Edited by Wang Zhanguo, Chen Yonghai, Ye Xiaoling, IEEE Electron Devices Society, and Zhongguo ke xue yuan. Ban dao ti yan jiu suo. Piscataway, NJ: IEEE, 2004.

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5

Shvart͡s, K. K. Fizika opticheskoĭ zapisi v diėlektrikakh i poluprovodnikakh. Riga: "Zinatne", 1986.

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6

V, Krylov O., ed. Electronic phenomena in adsorption and catalysis on semiconductors and dielectrics. Berlin: Springer-Verlag, 1987.

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7

Kiselev, Vsevolod F., and Oleg V. Krylov. Electronic Phenomena in Adsorption and Catalysis on Semiconductors and Dielectrics. Berlin, Heidelberg: Springer Berlin Heidelberg, 1987. http://dx.doi.org/10.1007/978-3-642-83020-4.

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8

Juraj, Breza, Dybecky F, Zat'ko B, IEEE Electron Devices Society, and Slovenská akadémia vied. Elektrotechnický ústav., eds. 2002 12th International Conference on Semiconducting and Insulating Materials: SIMC-XII-2002 : June 30 - July 5, 2002, Institute of Electrical Engineering, Slovak Academy of Science, Bratislava, Slovak Republic. Piscataway, NJ: IEEE, 2002.

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9

Symposium, on Ion Implantation and Dielectrics for Elemental and Compound Semiconductors (1989 Hollywood Fla ). Proceedings of the Symposium on Ion Implantation and Dielectrics for Elemental and Compound Semiconductors. Pennington, NJ: Electrochemical Society, 1990.

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10

Dmitruk, N. L. Poverkhnostnye poli͡a︡ritony v poluprovodnikakh i diėlektrikakh. Kiev: Nauk. dumka, 1989.

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11

C, Jagadish, and Welham N. J, eds. SIMC-XI: 2000 International Semiconducting and Insulating Materials Conference : 3-7 July, 2000, the Australian National University, Canberra, Australia. Piscataway, NJ: IEEE, 2000.

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12

Kazarov, B. A. Modelirovanie i raschet teplovykh, ėlektricheskikh svoĭstv shirokozonnykh poluprovodnikov i diėlektrikov: (s defektami, fazovymi perekhodami i nanoklasterami). Georgievsk: Georgievskiĭ tekhnologicheskiĭ in-t GOU VPO "SevKavGTU", 2008.

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13

Rotaru, A. Kh. Opticheskai͡a︡ samoorganizat͡s︡ii͡a︡ ėksitonov i biėksitonov v poluprovodnikakh. Kishinev: "Shtiint͡s︡a", 1990.

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14

Evgeni, Gusev, ed. Defects in high-k gate dielectric stacks: Nano-electronic semiconductor devices. Dordrecht: Springer, 2006.

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15

A, Bordovskiĭ G., ed. Termoaktivat͡sionnai͡a tokovai͡a spektroskopii͡a vysokoomnykh poluprovodnikov i diėlektrikov. Moskva: "Nauka," Glav. red., 1991.

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16

Maex, Karen. Materials, technology and reliability for advanced interconnects and low-k dielectrics: Symposium held April 23-27, 2000, San Fransico, California, U.S.A. Warrendale, Pa: Materials Research Society, 2001.

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17

Hori, Takashi. Gate dielectrics and MOS ULSIs: Principles, technologies, and applications. Berlin: Springer, 1997.

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18

Nano-CMOS gate dielectric engineering. Boca Raton: CRC Press, 2012.

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19

Pouch, John J. Auger electron spetroscopy, secondary ion mass spectrometry and optical characterization of a-C:H and BN films. [Cleveland, Ohio: National Aeronautics and Space Administration, Lewis Research Center, 1986.

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20

Baraban, A. P. Ėlektronika sloev SiO₂ na kremnii. Leningrad: Izd-vo Leningradskogo universiteta, 1988.

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21

I, Gardner Mark, and Materials Research Society, eds. Novel materials and processes for advanced CMOS: Symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A. Warrendale, Pa: Materials Research Society, 2003.

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22

Symposium F, "Materials, Technology and Reliability of Low-K Dielectrics and Copper Interconnects" (2006 San Francisco, Calif.). Materials, technology and reliability of low-k dielectrics and copper interconnects: Symposium held April 18-21, 2006, San Francisco, California, U.S.A. Edited by Tsui Ting Y and Materials Research Society Meeting. Warrendale, Pa: Materials Research Society, 2006.

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23

Symposium F, "Materials, Technology and Reliability of Low-K Dielectrics and Copper Interconnects" (2006 San Francisco, Calif.). Materials, technology and reliability of low-k dielectrics and copper interconnects: Symposium held April 18-21, 2006, San Francisco, California, U.S.A. Edited by Tsui Ting Y and Materials Research Society Meeting. Warrendale, Pa: Materials Research Society, 2006.

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24

Symposium F, "Materials, Technology and Reliability of Low-K Dielectrics and Copper Interconnects" (2006 San Francisco, Calif.). Materials, technology and reliability of low-k dielectrics and copper interconnects: Symposium held April 18-21, 2006, San Francisco, California, U.S.A. Edited by Tsui Ting Y and Materials Research Society Meeting. Warrendale, Pa: Materials Research Society, 2006.

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25

J, McKerrow Andrew, Materials Research Society Meeting, and Symposim on Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics (2003 : San Francisco, Calif.), eds. Materials, technology and reliability for advanced interconnects and low-k dielectrics, 2003: Symposium held April 21-25, 2003, San Francisco, California, U.S.A. Warrendale, Pa: Materials Research Society, 2003.

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26

G, En William, and Materials Research Society Meeting, eds. Materials issues in novel Si-based technology: Symposium held November 26-28, 2001, Boston, Massachusetts, U.S.A. Warrendale, PA: Materials Research Society, 2002.

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27

Symposium on Electrochemical Processing in ULSI Fabrication (3rd 2000 Toronto, Ont.). Electrochemical processing in ULSI fabricatrion III: Proceedings of the International Symposium. Edited by Andricacos Panayotis C. 1951-, Electrochemical Society Electrodeposition Division, Electrochemical Society. Dielectric Science and Technology Division., Electrochemical Society Electronics Division, and Electrochemical Society Meeting. Pennington, N.J: Electrochemical Society, 2002.

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28

Kiselev, Vsevolod F., and Oleg V. Krylov. Adsorption Processes on Semiconductor and Dielectric Surfaces I. Berlin, Heidelberg: Springer Berlin Heidelberg, 1985. http://dx.doi.org/10.1007/978-3-642-82051-9.

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29

Symposium on Dielectric Films on Compound Semiconductors (1987 Honolulu, Hawaii). Proceedings of the Symposium on Dielectric Films on Compound Semiconductors. Pennington, NJ (10 S. Main St., Pennington 08534-2896): Electrochemical Society, 1988.

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30

Symposium on Dielectric Films on Compound Semiconductors (1985 Las Vegas, Nev.). Proceedings of the Symposium on Dielectric Films on Compound Semiconductors. Pennington, NJ (10 S. Main St., Pennington 08534-2896): Electrochemical Society, 1986.

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31

International, Workshop on Crystal Growth Technology (3rd 2005 Beatenberg Switzerland). Crystal growth technology: From fundamentals and simulation to large-scale production. Weinheim: Wiley-VCH, 2008.

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32

M, Eizenberg, Murarka S. P, and Sinha A. Krishna 1941-, eds. Interlayer dielectrics for semiconductor technologies. London: Elsevier Academic Press, 2003.

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33

Scheel, Hans J., Peter Capper, and Peter Rudolph. Crystal Growth Technology: Semiconductors and Dielectrics. Wiley & Sons, Incorporated, John, 2011.

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34

Scheel, Hans J., Peter Capper, and Peter Rudolph. Crystal Growth Technology: Semiconductors and Dielectrics. Wiley & Sons, Incorporated, John, 2011.

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35

Scheel, Hans J., Peter Capper, and Peter Rudolph. Crystal Growth Technology: Semiconductors and Dielectrics. Wiley & Sons, Limited, John, 2010.

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36

Scheel, Hans J., Peter Capper, and Peter Rudolph. Crystal Growth Technology: Semiconductors and Dielectrics. Wiley & Sons, Incorporated, John, 2011.

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37

Scheel, Hans J., Peter Capper, and Peter Rudolph. Crystal Growth Technology: Semiconductors and Dielectrics. Wiley-Interscience, 2010.

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38

Michel, Houssa, ed. High-K gate dielectrics. Bristol: Institute of Physics, 2004.

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39

Highk Gate Dielectrics For Cmos Technology. Wiley-VCH Verlag GmbH, 2012.

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40

Electron processes in mis-structure memorie. Commack, N.Y: Nova Science Publishers, 1989.

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41

Electron Processes in Mis-Structure Memories (Horizons in World Physics). Nova Science Publishers, 1989.

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42

(Editor), Alexander A. Demkov, and Alexandra Navrotsky (Editor), eds. Materials Fundamentals of Gate Dielectrics. Springer, 2005.

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43

Laser techniques for investigation of defects semiconductors and dielectrics. Commack, N.Y: Nova Science Publishers, 1988.

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44

He, Gang, and Zhaoqi Sun. High-K Gate Dielectrics for CMOS Technology. Wiley & Sons, Incorporated, John, 2012.

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45

He, Gang, and Zhaoqi Sun. High-K Gate Dielectrics for CMOS Technology. Wiley & Sons, Incorporated, John, 2012.

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46

He, Gang, and Zhaoqi Sun. High-K Gate Dielectrics for CMOS Technology. Wiley & Sons, Incorporated, John, 2012.

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47

Houssa, Michael. High k Gate Dielectrics (Materials Science and Engineering). Taylor & Francis, 2003.

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48

Petrovich, Mushinskiĭ Valeriĭ, and Universitati͡a︡ de Stat "V.I. Lenin.", eds. Opticheskie svoĭstva poluprovodnikov i diėlektrikov: Mezhvuzovskiĭ sbornik. Kishinev: Shtiint͡s︡a, 1986.

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49

A, Manenkov A., ed. Lazernye metody issledovaniĭ defektov v poluprovodnikakh i diėlektrikakh. Moskva: "Nauka", 1986.

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50

Fractional Kinetics In Solids Anomalous Charge Transport In Semiconductors Dielectrics And Nanosystems. World Scientific Publishing Company, 2011.

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