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Academic literature on the topic 'Dielectric thin layer'

Author: Grafiati

Published: 25 May 2024

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Journal articles on the topic "Dielectric thin layer"

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Lee, Sangwoo, Joonbong Lee, Jaeyoung Yang, and Taekjib Choi. "Study of Etch Stop Layer on Characteristics of Amorphous Aluminum Oxide Thin Film." ECS Meeting Abstracts MA2022-01, no. 21 (July 7, 2022): 2433. http://dx.doi.org/10.1149/ma2022-01212433mtgabs.

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To protect the active layer, which are inter layer dielectrics (ILD) and metal lines, from being damaged by UV laser during the etching process, etch stop layers (ESL) are used in patterning process of the integrated circuits (ICs) fabrication in back end of line (BEOL). The ESL material should have a higher etch selectivity than the active layer. Therefore, it must have a low dielectric constant and high chemical resistance. Aluminum oxide compounds (AlOx, AlOC, AlON, etc.) are highly suitable for use as ESL due to the low dielectric constant between about 4 and 9, high etch selectivity, high density (2.5-3.8 g/cm3) and pattern transfer capability. We focused on lowering the dielectric permittivity and increasing the density by controlling the precursor/reactant pulsed time of atomic layer deposition (ALD).

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Gagarin, Alexander, Diana Tsyganova, Andrey Altynnikov, Andrey Komlev, and Roman Platonov. "An Adaptation of the Split-Cylinder Resonator Method for Measuring the Microwave Properties of Thin Ferroelectric Films in a “Thin Film—Substrate” Structure." Sensors 24, no. 3 (January 24, 2024): 755. http://dx.doi.org/10.3390/s24030755.

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The split-cylinder resonator method was adapted to measure the microwave properties (dielectric permittivity and loss tangent) of thin ferroelectric films on a dielectric substrate. The mathematical model for calculating the resonance frequency of the split-cylinder resonator was adjusted for the “ferroelectric film—substrate” structure. An approach for correcting the gap effect based on calibrating with a single-layer dielectric was introduced and used to study two-layer dielectrics. The prototype of a split-cylinder resonator designed to measure single-layer dielectric plates at a frequency of 10 GHz was presented. The resonator calibration was performed using dielectric PTFE samples and fused silica, and an example of the correction function was suggested. The measurement error was estimated, and recommendations on the acceptable parameter range for the material under investigation were provided. The method was demonstrated to measure the microwave properties of a ferroelectric film on a fused silica substrate.

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Shih-Chang Shei, Shih-Chang Shei, and Yichu Wang Shih-Chang Shei. "以三氧化二鋁為閘極絕緣層之銦鎵鋅氧薄膜電晶體之研究." 理工研究國際期刊 13, no. 1 (April 2023): 1–10. http://dx.doi.org/10.53106/222344892023041301001.

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In this study focuses on the dielectric layer materials of thin film transistors (TFTs). Gate oxide was deposited using a RF Magnetron Sputtering control system. The first studied the aluminium oxide (Al2O3) dielectric layer material deposited with different oxygen flow and annealed by the furnace tube. The study found that the properties of aluminium oxide (Al2O3) thin film transistors (TFTs) after furnace tube annealing reduced the interface trap density and the roughness of the thin film after annealing. The above dielectric layer is used to make thin film transistors (TFTs) with a bottom gate structure. The characteristics of thin film transistors (TFTs) are significantly improved by higher oxygen flow and additional thermal anneal. By analyzing the structure and electrical measurement of the thin film, the influence of the dielectric layer material on the thin film transistors (TFTs) is analyzed.

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Sun, Xiao Hua, Ping Feng, Jun Zou, and Min Wu. "Dielectric Tunable Properties of Ba_0.6Sr_0.4TiO₃ Thin Films with and without LSCO Buffer Layer." Advanced Materials Research 97-101 (March 2010): 504–9. http://dx.doi.org/10.4028/www.scientific.net/amr.97-101.504.

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Barium strontium titanate Ba0.6Sr0.4TiO3 (BST) thin films were fabricated by pulsed laser deposition (PLD) technique on Pt/TiO2/SiO2/Si substrate with and without high (100) oriented LSCO buffer layer. Crystal structure and surface morphology of BST thin films with and without LSCO buffer layer were characterized by X-ray diffraction (XRD) and atom force microscope (AFM). The dielectric measurements were conducted on metal-insulator-metal capacitors at the frequency from 100 Hz to 1M Hz and at room temperature. It was found that the LSCO buffer layer was beneficial for BST films to decrease surface roughness, dielectric loss and to increase grain size, dielectric constant, tunability and figure of merit (FOM). The influence of LSCO buffer layer on the microstructure, dielectric and tunable properties of BST thin films were analyzed. At 1M Hz, the dielectric constants of BST films with and without LSCO buffer layer are 684 and 592, respectively. The tunability of BST thin film with LSCO buffer layer was about 65.48%, which was higher than that (about 41.84%) of BST thin film without LSCO buffer layer.

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Niu, Jia Qi, Zhen Kun Xie, Zhen Xing Yue, and Wei Qiang Wang. "Using Ferroelectric Thin Film as the Dielectric for Electrowetting-on-Dielectric." Key Engineering Materials 697 (July 2016): 227–30. http://dx.doi.org/10.4028/www.scientific.net/kem.697.227.

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In this paper, the dielectric and electrowetting properties of Pb (Zr0.4Ti0.6)O3 (PZT) ferroelectric thin film are studied as the dielectric layer in electrowetting-on-dielectric (EWOD) device. The PZT thin film is formed by spin-coating, pyrolysis and annealing. The characterization results show that PZT thin film can serve as the dielectric of EWOD with a high dielectric constant and a great electrowetting performance when used in silicon oil bath environment. To test the electrowetting effect, a EWOD device with 200nm thick PZT ferroelectric thin film dielectric layer is fabricated. The variation of contact angle between droplet and device surface achieved with DC voltage, AC voltage and AC frequency change of electrowetting on PZT are fully experimented. The EWOD device with PZT dielectric layer can manipulate water droplet at low driving voltages. This study shows the potential of using ferroelectric ceramic material as the dielectric layer in high-performance EWOD devices.

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Kovalchuk, N. S., A. A. Omelchenko, V. A. Pilipenko, V. A. Solodukha, S. V. Demidovich, V. V. Kolos, V. A. Filipenia, and D. V. Shestovski. "Research of Electrophysical Properties of Thin Gate Dielectrics Obtained by Rapid Thermal Processing Method." Doklady BGUIR 20, no. 4 (June 29, 2022): 44–52. http://dx.doi.org/10.35596/1729-7648-2022-20-4-44-52.

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Researches of the electrophysical characteristics of gate dielectrics obtained by the rapid thermal processing (RTP) method by two-stage and three-stage processes have been carried out. Each photonic processing (stage) was carried out for 12 s at a constant power of halogen lamps and heating the wafers to a maximum temperature of 1250 °C. The first two stages of the process were carried out in an oxygen atmosphere, the third - in nitrogen or a forming gas. It was found that for dielectrics obtained by the process with final processing in a nitrogen atmosphere, the absolute value of the voltage of flat zones is 0.42 V less, than for insulators, formed by a two-stage process. This is the consequence of the elimination of a significant part of the defects, responsible for the presence of Coulomb centers in the dielectric layer. Carrying out photonic processing in anitrogen atmosphere at high temperatures of procedures for proceeding of the restructuring of the structure of the dielectric layer. For insulators obtained by a three-stage process with final processing in N2, an increase in dielectric strength and breakdown voltage by 1 V and 3.3 MV/cm, respectively, is observed in comparison with dielectrics, obtained by a two-stage process. An increase in dielectric strength indicates relaxation of elastic stresses of deformed bonds and compensation for dangling bonds both in the dielectric and at its interface with Si during high-temperature photonic treatment. Passivation by nitrogen atoms of deformations at the dielectric/semiconductor interface will also have a positive effect on the strength of the insulator.

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Bazarova, Sayana B., Ivan G. Simakov, Chingis Zh Gulgenov, and Tumen Ch Ochirov. "Determination of the dielectric properties of water in a thin layer." Himičeskaâ fizika i mezoskopiâ 26, no. 1 (2024): 85–94. http://dx.doi.org/10.62669/17270227.2024.1.8.

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A technique is proposed for determining the dielectric properties of water in a nanoscale layer at frequencies corresponding to orientation polarization. The method is based on the registration of the change in the velocity of elastic surface waves resulting from the interaction with a thin layer of a liquid. It was assumed that the dispersion of the dielectric permittivity of water in the thin layer is described by the Debye's equations of dielectric relaxation. In order to demonstrate the capabilities of the proposed method, the values of the real part of the dielectric permittivity of adsorbed water at various frequencies f (43.2; 64.8; 108; 129.6, 194.4, 302.4, 388.8 MHz) were experimentally determined at a fixed thickness of the adsorption layer h (2.2; 2.8; 3.7; 13 nm). The determination of the value of the imaginary part of the dielectric permittivity as well as the calculation of the time of dielectric relaxation, static, and high-frequency dielectric permittivities was enabled by the use of the experimental values and Debye's equations. A comparison was made between the dielectric properties of adsorbed water and those of water in the bulk liquid phase. The high-frequency dielectric permittivity of adsorbed water was found to be lower than that of water in the bulk liquid phase, while the static dielectric permittivity was significantly higher. The dielectric relaxation time of adsorbed water is dependent on the thickness of the adsorption layer and is significantly longer than that of water in the bulk liquid phase.

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Senior, Thomas B. A., and John L. Volakis. "Sheet simulation of a thin dielectric layer." Radio Science 22, no. 7 (December 1987): 1261–72. http://dx.doi.org/10.1029/rs022i007p01261.

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Brosseau, C. "Breakdown of a thin dielectric liquid layer." IEEE Transactions on Electrical Insulation 27, no. 6 (1992): 1217–21. http://dx.doi.org/10.1109/14.204875.

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Svetovoy, Vitaly B. "Casimir Forces between a Dielectric and Metal: Compensation of the Electrostatic Interaction." Physics 5, no. 3 (July 25, 2023): 814–22. http://dx.doi.org/10.3390/physics5030051.

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The Casimir forces between metals or good conductors have been checked experimentally. Semiconductors and especially dielectrics have not been investigated because of the surface charges, which generate strong electrostatic forces. Here, it is proposed to study the Casimir interaction of a dielectric and metal using a thin dielectric layer deposited on an optically thick metallic substrate. If the thickness of the layer is a few tens of nanometers, the electrostatic force due to charging can be compensated for by applying an extra voltage between the metallic plates. On the other hand, the contribution of the dielectric layer to the Casimir force is sufficiently large to extract information about the interaction between the bulk dielectric and metal.

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Dissertations / Theses on the topic "Dielectric thin layer"

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STRICKER, JEFFERY T. "ORGANIC ELECTRONIC DEVICES USING CROSSLINKED POLYELECTROLYTE MULTILAYERS AS AN ULTRA-THIN DIELECTRIC MATERIAL." University of Cincinnati / OhioLINK, 2006. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1157640369.

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Lemenager, Maxime. "Atomic Layer Deposition of thin dielectric films for high density and high reliability integrated capacitors." Thesis, Lyon, 2019. http://www.theses.fr/2019LYSEI085.

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Le stockage d’énergie dans les systèmes embarqués fait toujours l’objet d’importants efforts de R&D car il nécessite une constante diminution du volume occupé par les composants électroniques. Il apparaît que la taille des composants discrets que sont les condensateurs est un des freins à la miniaturisation des dispositifs finaux. Bien que des technologies, principalement basées sur la gravure profonde du silicium à l’échelle micrométrique, aient permis des avancées considérables, elles se montrent dorénavant limitées en termes de densité d’intégration. De ce fait, Murata IPS a développé une nouvelle technologie 3D à l’échelle nanométrique permettant une plus forte surface développée. L’utilisation d’une telle matrice requiert une méthode de dépôt de l’empilement MIM telle que l’ALD, adaptée aux structures à fort rapport d’aspect. Le but de cette thèse est ainsi l’intégration de la structure MIM dans la nouvelle matrice 3D dans le respect des contraintes inhérentes à l’industrie de manière à donner lieu à la cinquième génération des technologies PICS™. Le premier challenge résidait dans la conformalité des dépôts que nous nous sommes efforcés d’obtenir avec un équipement de production. Cela a permis de démontrer une densité de capacité supérieure à 1µF/mm² en utilisant un film diélectrique d’alumine de 10nm. Il s’avère également que l’intégration des électrodes TiN joue un rôle important sur la structure 3D. En effet, les contraintes ont dû être réduites pour assurer la tenue mécanique de la structure, notamment en jouant sur le pulse NH3. Les interfaces métal-diélectriques ont également fait l’objet d’une étude approfondie où l’influence de l’oxydation du TiN pendant le dépôt diélectrique a pu être mise en évidence et caractérisée électriquement. Cette étude a amené à l’intégration d’un matériau supplémentaire jouant le rôle de barrière aux interfaces, produisant des condensateurs avec une durée de vie supérieure à 10ans dans les conditions d’utilisation visées
Energy storage in embedded systems is still the subject of major R&D efforts as it requires a constant decrease in the volume of electronic components. It appears that the size of the discrete components, such as capacitors, is one of the brakes to the miniaturization of the final devices. Although technologies mainly based on silicon deep etching at the micrometric scale have made considerable progresses, they are now limited in terms of integration density. As a result, Murata IPS is developing a new 3D technology enabling a higher developed surface area. The use of such a matrix requires a MIM stack deposition technique such as ALD which is adapted to high aspect ratios. The aim of this thesis has been thus to integrate the MIM structure into the new 3D matrix while respecting the constraints inherent to the industry in order to give rise to the fifth generation of PICS™ technologies. The first challenge has been the achievement of sufficient step coverage of the films with an industrial equipment. A capacitance density greater than 1µF/mm² using a 10nm alumina film has been demonstrated. It also turns out that the TiN electrodes integration plays an important role on the 3D structure. Indeed, the mechanical stress had to be reduced to ensure the mechanical robustness of the structure, in particular by playing on the NH3 pulse. The metal-dielectric interfaces have also been the subject of an in-depth study where the influence of TiN oxidation during dielectric deposition has been shown and electrically characterized. This study has then led to the integration of an additional barrier material at the interfaces, producing capacitors with a 10-year lifetime under the intended voltage and temperature conditions

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Castillo, Solis Maria De los angeles. "Dielectric resonator antennas and bandwidth enhancement techniques." Thesis, University of Manchester, 2015. https://www.research.manchester.ac.uk/portal/en/theses/dielectric-resonator-antennas-and-bandwidth-enhancement-techniques(44b64ce4-dc73-496a-b656-dc4b9c910291).html.

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In this thesis a technique that is being used in another area of technology to optimize light reception in a photographic camera was also applied to the dielectric resonator antenna. The technique consisting of the use of thin film to couple the media and camera impedances resulted in a dielectric resonator antenna bandwidth enhancement technique. The bandwidth enhancement technique was found when thin film dielectric layer structure was used to couple the dielectric resonator and its feed mechanism. Remarkable good performance was detected with a coplanar waveguide fed cylindrical dielectric resonator antenna which resulted in an improvement to its fractional bandwidth from 7.41% to 50.85%. Extensive experimental work was undertaken in order to explore the extent offered in bandwidth performance by using thin film dielectric layer structure in the dielectric resonator antenna performance. The experimental tasks were designed in order to investigate the influence of the thin film dielectric layer structure in relation to its size, shape, thickness, position and direction. Experimental results were supported with simulation work with the computer simulation technology microwave studio. The pieces of the material used for undertaking this experimental work were manually handcrafted. Four different dielectric resonator antenna designs were used in order to carry out the experimental work including the coplanar waveguide fed cylindrical dielectric resonator antenna. The other three dielectric resonator antennas were implemented using the same microstrip feed mechanism. Improved performance in bandwidth was achieved for all the designs. Optimization of the incoming signal was observed when a piece of thin film dielectric layer structure was placed in position between the feed mechanism and the dielectric resonator antenna. The optimization was observed as an enhancement in both the return loss level and the bandwidth of work. Different unexpected operational modes from were activated, such modes being called perturbed modes. Two different shapes were used in this project. Cylindrical dielectric resonator antenna (ɛr = 37) from a commercial provider and two novel rectangular dielectric resonator antennas. The novel rectangular dielectric resonator antennas were created with the methodology presented in this thesis. The rectangular dielectric resonator antennas were elaborated with transparent ceramic material (ɛr = 7) and TMM10i (ɛr = 9.8) from the Rogers Corporation company. The bandwidth enhancement technique was tested in novel embedded dielectric resonator antennas. A coplanar waveguide fed embedded cylindrical dielectric resonator antenna achieved a maximum bandwidth enhancement of 156.77% around f = 3.79 GHz with a thin film dielectric layer structure modified rectangular piece on one edge. Escalation to dielectric resonator antenna design at millimeter wave frequencies was achieved by using thin film dielectric layer structure bandwidth enhancement technique and a handcrafted printed circuit board millimeter wave feed mechanism. The millimeter wave feed mechanisms were achieved using a low cost alternative technique conceived as part of this project. Millimeter wave dielectric resonator antennas were implemented using thin film dielectric layers structure. The antennas deliver an adequate performance in bandwidth. The work presented in this thesis demonstrates dielectric resonator antenna simpler geometry, simple couple schemes, small size, low profile, light weight, and ease of excitation and orientation. Other parameters have also been investigated covering reduced complexity, high degree of flexibility, ease of fabrication and the use of low cost technology to escalate to millimeter wave frequencies.

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Mahadevegowda, Amoghavarsha. "Processing, microstructure and properties of polymer-based nano-composite dielectrics for capacitor applications." Thesis, University of Oxford, 2014. http://ora.ox.ac.uk/objects/uuid:fb974b13-2ec5-4104-9f80-45d1cb97eb48.

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The processing and properties of novel polymer-based nano-composite (PNC) dielectrics for capacitor applications has been studied. PNCs were fabricated via a vacuum based deposition technique and their micro/nano-structure, chemical and dielectric properties investigated. After process development and optimisation, co-deposited Al and nylon-6 PNCs had a dielectric constant k∼7 at an approximate Al volume fraction of 0.3 that agreed with analytical predictions if it was assumed that the Al transformed to an oxide in-situ and/or after deposition. The significant effect of absorbed water vapour and temperature on PNC dielectric properties was revealed using different types of post-deposition heat treatment. Alternately-deposited PNCs consisting of Al or Ag 2-20 nm layers sandwiched between nylon-6 layers were fabricated in which the overall PNC Al or Ag volume fraction was controlled by varying the nominal Al or Ag layer thickness. Ag layers comprised of discrete nano-islands that produced a nano-capacitor network effect that increased k to ∼11. In the case of Al layers, when the layer thickness was ≥ 5 nm, corresponding to a nominal volume fraction of 0.1, Al (core)-oxide (shell) nanoparticles were formed and the PNC dielectric constant increased to ∼19. The detailed nano-structure of the core-shell particles was studied using various types of transmission electron microscopy (TEM), and the elevations in dielectric constant ascribed to multiple-interface polarisation effects dependent on the formation of the core-shell structure. PNCs based on alternate deposition of Ti sandwiched in nylon-6, and then both Ti and Ag in nylon-6 were also fabricated, with k reaching ∼73 for Ag+Ti/nylon-6 PNCs. As well as Ti-based core (metal)-shell (oxide) particles, the Ag volume fraction was sufficiently high in the 10 nm nylon-6 layers to again form a nano-capacitor network that contributed to the overall device capacitance and effective dielectric constant. Again, various types of high magnification TEM were critical in resolving the Ti-based core-shell structure and its role in high-k behaviour. The vacuum-based alternate deposition technique has been developed to offer ease of operation, reliability, flexibility and applicability to chemically different filler and matrix systems in the fabrication of high-k PNC based capacitors, in which high-k performance relies critically on the formation of core (metal)-shell (oxide) particles in both Al and Ti based systems.

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Aygun, Ozyuzer Gulnur. "Growth And Characterization Of Thin Sio2 And Ta2o5 Dielectric Layers By Nd:yag Laser Oxidation." Phd thesis, METU, 2005. http://etd.lib.metu.edu.tr/upload/3/12605968/index.pdf.

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Our aim was to establish a methodology for laser assisted oxidation of semiconductor and metal surfaces. One advantage of laser oxidation is the fact that radiation is heavily absorbed in a thin surface layer of the sample and the other is its ability for local oxidation. In addition to this, laser beam can be directed into some areas that other processes cannot reach. For these reasons, Nd:YAG pulsed laser working at 1064 nm wavelength is used for the oxidation purposes of Si and Ta films. First, SiO2 layer was obtained for various O2 pressures and laser powers. The thickness, refractive index, structural, dielectric, electrical and optical characteristics of the SiO2 layers have been determined. We have established that there exists an interval of laser power in which the oxidation occurs without surface melting. The oxidation process is controlled by the laser power rather than by the substrate temperature (673 &ndash
748 K). It was found that better film quality is obtained at higher substrate temperatures and laser power greater than 3.36 J/cm2. Second, rf-sputtered Ta films were oxidized by laser, because Ta2O5 appears to be a good promising candidate to replace SiO2 because of its high dielectric constant, high breakdown voltage and relevant small leakage current values. It was found that the substrate temperature is an important parameter to obtain denser layers with reduced amount of suboxides and the most suitable substrate temperature range is around 350 C to 400 C. &
#946
-orthorhombic crystal structure was obtained when the substrate temperature is 350 &ndash
400 C for thinner films (up to 20 &ndash
25 nm) and 300 &ndash
350 C for thicker films (40 nm). The refractive index values of laser grown thin tantalum oxide films were between ~1.9 and 2.2 being close to those of bulk Ta2O5 (2.0 &ndash
2.2). Oxide thicknesses in uniform Gaussian&ndash
like shapes were measured as around the twice of those initial Ta films. Effective dielectric constant values reached ~26 when the substrate temperature was increased from 250 C to around 400 C. It was shown that the leakage current density level decreases with increasing substrate temperature. However, the refractive index values of the films were smaller than those of thermally grown films. Porous structure formed during laser oxidation might be the reason for lower refractive indices and can be improved by post&ndash
oxidation annealing.

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DeSandre, Lewis Francis. "LASER DAMAGE MEASUREMENTS ON ALL-DIELECTRIC NARROW-BAND FILTERS." Thesis, The University of Arizona, 1985. http://hdl.handle.net/10150/275258.

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Anders, Jason Christopher. "Thin Film Growth of Dielectric Materials by Pulsed Laser Deposition." Wright State University / OhioLINK, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=wright1401681886.

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Guerboukha, Mohamed-Amine. "Etude de l'auto-assemblage et des propriétés électroniques de monocouches moléculaires sur germanium." Electronic Thesis or Diss., Aix-Marseille, 2021. http://www.theses.fr/2021AIXM0020.

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Dans le domaine de la microélectronique, en raison de la mobilité intrinsèque élevée de ses porteurs de charge, le Ge apparaît comme un matériau alternatif prometteur pour remplacer le Si dans la prochaine génération de transistors à haute mobilité et à haute fréquence. Cependant, contrairement au dioxyde de silicium, l’oxyde de germanium n’est ni stable ni de bonne qualité. Ainsi la préparation de couches interfaciales permettant de passiver le Ge est nécessaire mais reste à ce jour encore problématique. Une voie prometteuse consiste à utiliser des SAM avec une constante diélectrique élevée. Au cours de ce travail nous nous sommes attachés à réaliser et caractériser de nouvelles SAMs à base d’organothiols greffés sur Ge, présentant une application potentielle comme isolants de grille. Nous avons utilisé des chaînes alkyles et des chromophores push-pull originaux. Nous avons adapté et mis au point la technique de désoxydation/greffage et montré qu’elle donne de meilleurs résultats que le traitement acide généralement utilisé. Cette méthode nous a en effet permis d’obtenir des surfaces de Ge fonctionnalisé moins rugueuses avec des SAMs bien organisées. Les analyses par XPS et FTIR démontrent l’élimination de l’oxyde du Ge. Nous avons mesuré les caractéristiques I-V des différentes SAMs à l'aide de contacts E-GaIn. Avec les PP, nous avons pu diminuer le courant d’un facteur 105 comparé au Ge, et 104 par rapport à l’alkyle. L’analyse statistique des caractéristiques électriques a été menée par spectroscopie de tension de transition, et corrélée avec niveaux moléculaires par IPES pour les niveaux inoccupés, la détermination des niveaux occupés par XPS, et calculs DFT
In the field of microelectronics, due to its high intrinsic carrier mobility, germanium (Ge) is emerging as a promising alternative material to replace silicon in the next generation of high-mobility and high-frequency transistors. However, unlike silicon dioxide, Ge oxide is neither stable nor of good quality. Thus, the preparation of interfacial layers to passivate and isolate Ge is necessary but still problematic. A promising approach is the use of SAMs with a high dielectric constant. In this perspective, during this work we have focused on the preparation and characterization of new SAMs based on organothiols grafted on Ge, exhibiting potential application as grid insulators. We have used hydro- and fluoro-carbonated alkyl chains, and novel bithiophene-based non-charged push-pull chromophores (PP) specially synthesized with the motivation to prepare layers with high dielectric constants by the presence of dipoles. We have adapted and developed the deoxidation/grafting technique in hydro-alcoholic solution and shown that it provides better results than the acid treatment. Indeed, such method has allowed us to obtain less rough functionalized Ge surfaces. XPS and FTIR analyses demonstrate the removal of oxide. We have measured I-V characteristics of the various SAMs using E-GaIn contacts. PP SAMs have allowed to decrease the current by a factor of 105 compared to Ge and of 104 compared to a twelve carbon atoms alkyl SAM. Statistical analyses of the electrical characteristics have been performed using TVS, and correlated with molecular levels, using IPES for probing the unoccupied levels, determination of the valence band occupied levels by XPS, and DFT calculations

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El, Hajjam Khalil. "Ingénierie de jonctions tunnel pour améliorer les performances du transistor mono-électronique métallique." Thèse, Université de Sherbrooke, 2016. http://hdl.handle.net/11143/8508.

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Résumé: Aujourd’hui plusieurs obstacles technologiques et limitations physiques s’opposent à la poursuite de la miniaturisation de la technologie CMOS : courants de fuite, effet de canal court, effet de porteurs chauds et fiabilité des oxydes de grille. Le transistor à un électron (SET) fait partie des composants émergents candidats pour remplacer les transistors CMOS ou pour constituer une technologie complémentaire à celle-ci. Ce travail de thèse traite de l’amélioration des caractéristiques électriques du transistor à un électron en optimisant ses jonctions tunnel. Cette optimisation commence tout d’abord par une étude des modes de conduction à travers la jonction tunnel. Elle se conclut par le développement d’une jonction tunnel optimisée basée sur un empilement de matériaux diélectriques (principalement Al[indice inférieur 2]O[indice inférieur 3], H[florin]O[indice inférieur 2] et TiO[indice inférieur 2]) ayant des propriétés différentes en termes de hauteurs de barrières et de permittivités relatives. Ce manuscrit présente, la formulation des besoins du SET et de ses jonctions tunnel, le développement d’outils de simulation appropriés - basés sur les Matrices de transmission - pour la simulation du courant des jonctions tunnel du SET, l’identification des stratégies d’optimisation de ces dernières, grâce aux simulations et finalement l’étude expérimentale et l’intégration technologique des jonctions tunnel optimisées dans le procédé de fabrication de SET métallique en utilisant la technique de dépôt par couches atomiques (ALD). Ces travaux nous ont permis de prouver l’intérêt majeur de l’ingénierie des jonctions tunnel du SET pour accroitre son courant à l’état passant, réduire son courant de fuite et étendre son fonctionnement à des températures plus élevées.
Abstract: Today, several technological barriers and physical limitations arise against the miniaturization of the CMOS: leakage current, short channel effects, hot carrier effect and the reliability of the gate oxide. The single electron transistor (SET) is one of the emerging components most capable of replacing CMOS technology or provide it with complementary technology. The work of this thesis deals with the improvement of the electrical characteristics of the single electron transistor by optimizing its tunnel junctions. This optimization initially starts with a study of conduction modes through the tunnel junction. It concludes with the development of an optimized tunnel junction based on a stack of dielectric materials (mainly Al[subscript 2]O[subscript 3], H[florin]O[subscript 2] and TiO[subscript 2]), having different properties in terms of barrier heights and relative permittivities. This document, therefore, presents the theoretical formulation of the SET’s requirements and of its tunnel junctions, the development of appropriate simulation tools - based on the transmission matrix model- for the simulation of the SET tunnel junctions current, the identification of tunnel junctions optimization strategies from the simulations results and finally the experimental study and technological integration of the optimized tunnel junctions into the metallic SET fabrication process using the atomic layer deposition (ALD) technique. This work allowed to démonstrate the significance of SET tunnel junctions engineering in order to increase its operating current while reducing leakage and improving its operation at higher temperatures.

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Talisa, Noah Brodzik. "Laser-Induced Damage and Ablation of Dielectrics with Few-Cycle Laser Pulses." The Ohio State University, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=osu1609243476481238.

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Books on the topic "Dielectric thin layer"

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Flemming, M. A., G. N. Plested, and Philip Crellin. The Analysis of Microwave Reflections from Imperfect Dielectrics and Its Application to the Detection of Thin Solvent Layers. AEA Technology Plc, 1987.

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Buchwald, Jed Z. Electrodynamics from Thomson and Maxwell to Hertz. Edited by Jed Z. Buchwald and Robert Fox. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199696253.013.20.

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This article examines developments in the field of electrodynamics from William Thomson and James Clerk Maxwell to Heinrich Hertz. It begins with a discussion of Michael Faraday’s work, focusing on his discovery of what was later termed ‘dielectric capacity’ and his role in the birth of field theory. It then considers Thomson’s unification of Faraday’s understanding of both electro- and magnetostatics with energy conservation, along with Maxwell’s extension of Thomson’s structure to cover electrodynamics, which for the first time brought to the fore issues concerning the electric current. It also describes Maxwellian electrodynamics and electromagnetic theory, Hermann Helmholtz’s development of a different form of electrodynamics, and Hertz’s work on electric waves.

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Basu, Prasanta Kumar, Bratati Mukhopadhyay, and Rikmantra Basu. Semiconductor Nanophotonics. Oxford University PressOxford, 2022. http://dx.doi.org/10.1093/oso/9780198784692.001.0001.

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Abstract Nanometre sized structures made of semiconductors, insulators and metals and grown by modern growth technologies or by chemical synthesis exhibit novel electronic and optical phenomena due to confinement of electrons and photons. Strong interactions between electrons and photons in narrow regions lead to inhibited spontaneous emission, thresholdless laser operation, and Bose Einstein condensation of exciton-polaritons in microcavities. Generation of sub-wavelength radiation by surface Plasmon-polaritons at metal-semiconductor interfaces, creation of photonic band gap in dielectrics, and realization of nanometer sized semiconductor or insulator structures with negative permittivity and permeability, known as metamaterials, are further examples in the area of nanophotonics. The studies help develop Spasers and plasmonic nanolasers of subwavelength dimensions, paving the way to use plasmonics in future data centres and high speed computers working at THz bandwidth with less than a few fJ/bit dissipation. The present book intends to serveas a textbook for graduate students and researchers intending to have introductory ideas of semiconductor nanophotonics. It gives an introduction to electron-photon interactions in quantum wells, wires and dots and then discusses the processes in microcavities, photonic band gaps and metamaterials and related applications. The phenomena and device applications under strong light-matter interactions are discussed by mostly using classical and semi-classical theories. Numerous examples and problems accompany each chapter.

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Book chapters on the topic "Dielectric thin layer"

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Mandal, Suman, and Dipak K. Goswami. "Flexible Organic Field-Effect Transistors Using Barium Titanate as Temperature-Sensitive Dielectric Layer." In Surfaces and Interfaces of Metal Oxide Thin Films, Multilayers, Nanoparticles and Nano-composites, 113–35. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-74073-3_5.

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Singh, Richa, and Shweta Tripathi. "Refractive Index and Dielectric Constant Evaluation of RF Sputtered Few Layer MoS2 Thin Film." In Lecture Notes in Electrical Engineering, 647–54. Singapore: Springer Singapore, 2019. http://dx.doi.org/10.1007/978-981-32-9775-3_59.

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Ahn, Seung Joon, S. Ahn, and Chul Geun Park. "Investigation on the LPCVD LTO Thin Film as a New Dielectric Layer for the Future ULSI Devices." In The Mechanical Behavior of Materials X, 1549–52. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-440-5.1549.

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Kapshai, Valery, Anton Shamyna, and Anton Talkachov. "Analysis of the Spatial Distribution of the Second-Harmonic Radiation Generated in a Thin Surface Layer of a Spheroidal Dielectric Particle." In Research and Education: Traditions and Innovations, 361–67. Singapore: Springer Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-0379-3_38.

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Teranishi, Takashi, Takakiyo Harigai, Hirofumi Kakemoto, Song Min Nam, Satoshi Wada, and Takaaki Tsurumi. "Measurements of Microwave Dielectric Property of Dielectric Thin Layers Using Micro-Sized Planar Electrodes." In Electroceramics in Japan VIII, 121–24. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-982-2.121.

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Heyns, M. M., and A. V. Schwerin. "Charge Trapping, Degradation and Wearout of Thin Dielectric Layers During Electrical Stressing." In Crucial Issues in Semiconductor Materials and Processing Technologies, 279–97. Dordrecht: Springer Netherlands, 1992. http://dx.doi.org/10.1007/978-94-011-2714-1_28.

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Venkatesan, T., S. Bhattacharya, C. Doughty, A. Findikoglu, C. Kwon, Qi Li, S. N. Mao, A. Walkenhorst, and X. X. Xi. "Pulsed Laser Deposited Metal-Oxide Based Superconductor, Semiconductor and Dielectric Heterostructures and Superlattices." In Multicomponent and Multilayered Thin Films for Advanced Microtechnologies: Techniques, Fundamentals and Devices, 209–38. Dordrecht: Springer Netherlands, 1993. http://dx.doi.org/10.1007/978-94-011-1727-2_13.

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Elsayad, Kareem, and Katrin G. Heinze. "Fluorescence Excitation, Decay, and Energy Transfer in the Vicinity of Thin Dielectric/Metal/Dielectric Layers near Their Surface Plasmon Polariton Cutoff Frequency." In Surface Plasmon Enhanced, Coupled and Controlled Fluorescence, 111–20. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2017. http://dx.doi.org/10.1002/9781119325161.ch6.

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Gronenberg, Ole, Georg Haberfehlner, Finn Zahari, Richard Marquardt, Christian Kübel, Gerald Kothleitner, and Lorenz Kienle. "Critical Discussion of Ex situ and In situ TEM Measurements on Memristive Devices." In Springer Series on Bio- and Neurosystems, 129–57. Cham: Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-36705-2_5.

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AbstractMemristors are promising candidates for new memory technologies and are capable to mimic synapses in artificial neural networks. The switching in memristive devices occurs typically in few nanometer thin dielectric layers. The direct observation of the switching mechanism is crucial for better comprehension and improvements of memristors. Therefore, in situ experiments are conducted in a transmission electron microscope (TEM). However, sample preparation processes and electron beam irradiation can lead to a chemical and structural modification of the active layers. Moreover, devices may show significant device-to-device variability due to the details of processing parameters. Thus, it is essential to characterize the identical device electrically before microstructural analysis.

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Rana, Paramjit, S. K. Mishra, Jaya Mukherjee, and V. S. Rawat. "Multilayer Dielectric Thin Film Optical Coating Design for Single Wavelength Operation of Inherently Dual Wavelength Copper Vapor Laser." In Springer Proceedings in Physics, 849–53. Singapore: Springer Singapore, 2021. http://dx.doi.org/10.1007/978-981-15-9259-1_196.

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Conference papers on the topic "Dielectric thin layer"

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Fitio, Volodymyr M., and Yaroslav V. Bobitski. "Transmission peculiarities of dielectric layer/thin metallic film/dielectric layer structure, with or without periodicity in the dielectric layers." In SPIE Proceedings, edited by Igor A. Sukhoivanov, Vasily A. Svich, and Yuriy S. Shmaliy. SPIE, 2008. http://dx.doi.org/10.1117/12.793384.

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Krupenko, S. A., and E. L. Ryazanova. "Thin-layer dielectric structure for laser diagnostics of microwave radiation." In Aerospace Sensing, edited by Shi-Kay Yao and Brian M. Hendrickson. SPIE, 1992. http://dx.doi.org/10.1117/12.138382.

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Mahodaux, C., H. Rigneault, H. Giovannini, and P. Morreti. "Mechanical properties of dielectric thin films." In Optical Interference Coatings. Washington, D.C.: Optica Publishing Group, 1997. http://dx.doi.org/10.1364/oic.1998.tug.1.

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Stress in thin films deposited by Reactive Low-Voltage Ion Plating (RLVIP) and conventional reactive evaporation (RE) process is studied in air and at room temperature. Multilayers stacks are considered and the interactions layer to layer turn out to have no effect as regards to the final bending. Evolution of stress after annealing shows the possibility to reduce the stress as well as the absorption for Ta2O5 thin films. Finally, ion implantation, such as helium and xenon, at high energy, proves to be also a way to vary the stress in thin films.

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Kong, Weijin, Maojin Yun, Cuichun Ling, Xin Sun, Jianda Shao, and Zhengxiu Fan. "High diffraction efficiency for multi-layer dielectric gratings with rectangular groove." In Sixth International Conference on Thin Film Physics and Applications. SPIE, 2008. http://dx.doi.org/10.1117/12.792247.

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Pelikanova, Ivana Beshajova, and Jakub Cinert. "The sputtered dielectric thin film layer and their properties." In 2009 32nd International Spring Seminar on Electronics Technology (ISSE). IEEE, 2009. http://dx.doi.org/10.1109/isse.2009.5207055.

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Kumar, Arvind, Sandip Mondal, and K. S. R. Koteswara Rao. "Zirconium doped TiO2 thin films: A promising dielectric layer." In INTERNATIONAL CONFERENCE ON CONDENSED MATTER AND APPLIED PHYSICS (ICC 2015): Proceeding of International Conference on Condensed Matter and Applied Physics. Author(s), 2016. http://dx.doi.org/10.1063/1.4946633.

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Bovard, Bertrand G. "Derivation of a new matrix for an inhomogeneous dielectric thin film." In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1986. http://dx.doi.org/10.1364/oam.1986.mc4.

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Varying the refractive index of a thin film from one boundary to the other is a very appealing design approach for new types of coating with higher performance. An exact expression for the amplitude reflection coefficient of a single inhomogeneous layer has been given by Sossi in the particular case where there is no refractive-index discontinuity at the layer boundaries.1 Nevertheless, the most efficient way to calculate the optical properties of a coating remains the matrix method where each layer is characterized by a 2 × 2 matrix. Although matrices have been listed in the literature for particular refractive-index profiles,2 no general expression has ever been given. Until now, the only general way to deal with inhomogeneous layers has been to consider each layer as a stack of numerous homogeneous sublayers and to multiply all the corresponding matrices. We introduce a new matrix characterizing any type of inhomogeneous layer, which can easily be included in the traditional programs and allows the calculation of the optical properties of any stack of inhomogeneous and homogeneous layers.

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Temme, Julian, Thorsten Meyers, Julia Reker, Fábio F. Vidor, Joachim Vollbrecht, Heinz Kitzerow, Jan Paradies, and Ulrich Hilleringmann. "Improved organic thin-film transistor performance by dielectric layer patterning." In Fifth Conference on Sensors, MEMS, and Electro-Optic Systems, edited by Monuko du Plessis. SPIE, 2019. http://dx.doi.org/10.1117/12.2500286.

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Kong, Weijin, Cuichun Ling, Maojin Yun, Xin Sun, Jianda Shao, and Zhengxiu Fan. "Rigorous coupled-wave analysis for the optical character of multi-layer dielectric thin film." In Sixth International Conference on Thin Film Physics and Applications. SPIE, 2008. http://dx.doi.org/10.1117/12.792248.

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Campabadal, F., J. M. Rafi, M. B. Gonzalez, M. Zabala, O. Beldarrain, M. C. Acero, and M. Duch. "Thin dielectric films grown by atomic layer deposition: Properties and applications." In 2013 Spanish Conference on Electron Devices (CDE). IEEE, 2013. http://dx.doi.org/10.1109/cde.2013.6481327.

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Reports on the topic "Dielectric thin layer"

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Al-Qadi, Imad, Qingqing Cao, Lama Abufares, Siqi Wang, Uthman Mohamed Ali, and Greg Renshaw. Moisture Content and In-place Density of Cold-Recycling Treatments. Illinois Center for Transportation, May 2022. http://dx.doi.org/10.36501/0197-9191/22-007.

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Cold-recycling treatments are gaining popularity in the United States because of their economic and environmental benefits. Curing is the most critical phase for these treatments. Curing is the process where emulsion breaks and water evaporates, leaving residual binder in the treated material. In this process, the cold-recycled mix gains strength. Sufficient strength is required before opening the cold-treated layer to traffic or placing an overlay. Otherwise, premature failure, related to insufficient strength and trapped moisture, would be expected. However, some challenges arise from the lack of relevant information and specifications to monitor treatment curing. This report presents the outcomes of a research project funded by the Illinois Department for Transportation to investigate the feasibility of using the nondestructive ground-penetrating radar (GPR) for density and moisture content estimation of cold-recycled treatments. Monitoring moisture content is an indicator of curing level; treated layers must meet a threshold of maximum allowable moisture content (2% in Illinois) to be considered sufficiently cured. The methodology followed in this report included GPR numerical simulations and GPR indoor and field tests for data sources. The data were used to correlate moisture content to dielectric properties calculated from GPR measurements. Two models were developed for moisture content estimation: the first is based on numerical simulations and the second is based on electromagnetic mixing theory and called the Al-Qadi-Cao-Abufares (ACA) model. The simulation model had an average error of 0.33% for moisture prediction for five different field projects. The ACA model had an average error of 2% for density prediction and an average root-mean-square error of less than 0.5% for moisture content prediction for both indoor and field tests. The ACA model is presented as part of a developed user-friendly tool that could be used in the future to continuously monitor curing of cold-recycled treatments.

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