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1

Gladkov, S. O. Dielectric Properties of Porous Media. Berlin, Heidelberg: Springer Berlin Heidelberg, 2003.

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2

Kiselev, V. F. Adsorption processes on semiconductor and dielectric surfaces I. Berlin: Springer-Verlag, 1985.

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3

Kiselev, Vsevolod F., and Oleg V. Krylov. Adsorption Processes on Semiconductor and Dielectric Surfaces I. Berlin, Heidelberg: Springer Berlin Heidelberg, 1985. http://dx.doi.org/10.1007/978-3-642-82051-9.

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4

Ho, Paul S. Low Dielectric Constant Materials for IC Applications. Berlin, Heidelberg: Springer Berlin Heidelberg, 2003.

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5

Symposium on Dielectric Films on Compound Semiconductors (1987 Honolulu, Hawaii). Proceedings of the Symposium on Dielectric Films on Compound Semiconductors. Pennington, NJ (10 S. Main St., Pennington 08534-2896): Electrochemical Society, 1988.

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6

Christophorou, Loucas G. Gaseous Dielectrics VIII. Boston, MA: Springer US, 1998.

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7

Christophorou, Loucas G. Gaseous Dielectrics IX. Boston, MA: Springer US, 2001.

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8

International Symposium on the Physics and Chemistry of SiO₂ and the Si-SiO₂ Interface (3rd 1996 Los Angeles, Calif.). The physics and chemistry of SiO₂ and the Si-SiO₂ interface-3, 1996: Proceedings of the Third International Symposium on the Physics and Chemistry of SiO₂ and the Si-SiO₂ Interface. Edited by Massoud Hisham Z, Poindexter Edward H, and Helms C. Robert. Pennington, NJ: Electrochemical Society, 1996.

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9

Angeles, CA) International Symposium on the Physics and Chemistry of SiO₂ and the Si-SiO₂ Interface (5th 2005 Los. The physics and chemistry of SiO₂ and the Si-SiO₂ interface--5. Pennington, NJ: Electrochemical Society, 2005.

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10

Synorov, V. F. Fizika MDP-struktur: Uchebnoe posobie. Voronezh: Izd-vo Voronezhskogo universiteta, 1989.

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11

International Symposium on the Physics and Chemistry of SiO₂ and the Si-SiO₂ Interface (4th 2000 Toronto, Ont.). The physics and chemistry of SiO₂ and the Si-SiO₂ interface--4, 2000: Proceedings of the Fourth International Symposium on the Physics and Chemistry of SiO₂ and the Si-SiO₂ Interface, Toronto, Canada, May 15-18, 2000. Edited by Massoud Hisham Z, Electrochemical Society Electronics Division, and Electrochemical Society. Dielectric Science and Technology Division. Pennington, NJ: Electrochemical Society, 2000.

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12

V, Krylov O., ed. Electronic phenomena in adsorption and catalysis on semiconductors and dielectrics. Berlin: Springer-Verlag, 1987.

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13

Hickey, Michael A. Reduced surface-wave twin arc-slot antennas on electrically thick dielectric substrates. Ottawa: National Library of Canada, 2001.

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14

Baraban, A. P. Ėlektronika sloev SiO₂ na kremnii. Leningrad: Izd-vo Leningradskogo universiteta, 1988.

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15

Floudas, George. Molecular Dynamics of Glass-Forming Systems: Effects of Pressure. Berlin, Heidelberg: Springer-Verlag Berlin Heidelberg, 2011.

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16

Humphrey, Kevin Paul. Spatially resolved surface resistance and non-linearity measurements of HTS thick films using two-dimensional scans with a rutile dielectric resonator. Birmingham: University of Birmingham, 2000.

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17

Forrer, Johannes B. Dielectric properties of defects on wood surfaces. 1996.

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18

Al, Kogut, and United States. National Aeronautics and Space Administration., eds. Reflection coefficients on surfaces of different periodic structure. [Washington, DC: National Aeronautics and Space Administration, 1997.

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19

Al, Kogut, and United States. National Aeronautics and Space Administration., eds. Reflection coefficients on surfaces of different periodic structure. [Washington, DC: National Aeronautics and Space Administration, 1997.

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20

A numerical simulation of scattering from one-dimensional inhomogeneous dielectric random surfaces. [Washington, DC: National Aeronautics and Space Administration, 1996.

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21

(Editor), H. R. Huff, and D. C. Gilmer (Editor), eds. High Dielectric Constant Materials: VLSI MOSFET Applications (Springer Series in Advanced Microelectronics). Springer, 2004.

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22

(Editor), H. Z. Massoud, C. R. Helms (Editor), and Edward H. Poindexter (Editor), eds. Physics & Chemistry of Si02 & the Si-Si02 Interface: 3rd International Symposium (Proceedings Series Volume 96-1). Electrochemical Society, 1996.

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23

(Editor), B. E. Deal, and C. R. Helms (Editor), eds. The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2. Springer, 1993.

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24

Robert, Helms C., Deal Bruce E, Electrochemical Society Electronics Division, Electrochemical Society. Dielectric Science and Technology Division., and Symposium on the Physics and Chemistry of the SiO₂ and Si-SiO₂ Interface (2nd : 1992 : St. Louis, Mo.), eds. The Physics and chemistry of SiO₂ and the Si-SiO₂ interface 2. New York: Plenum Press, 1993.

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25

Spacecraft dielectric surface charging property determination. [Cleveland, OH]: NASA Lewis Research Center, 1987.

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26

Battagin, Adrian. Material factors affecting dielectric surface arc discharges. 1987.

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27

A, International Symposium on the Physics, and Hisham Z. Massoud. Physics and Chemistry of Si02 and the Si-Si02 Interface-4: Proceedings of the Fourth International Symposium on the Physics and Chemistry of Sio2 and the ... Division Proceedings Volume 2000-2). Electrochemical Society, 1996.

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28

Surface Plasmon Enhanced, Coupled and Controlled Fluorescence. Wiley, 2017.

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29

Geddes, Chris D. Surface Plasmon Enhanced, Coupled and Controlled Fluorescence. Wiley & Sons, Incorporated, John, 2017.

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30

Analysis of surface wave propagation in a grounded dielectric slab covered by a resistive sheet. Hampton, Va: National Aeronautics and Space Administration, Langley Research Center, 1992.

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31

Horing, Norman J. Morgenstern. Random Phase Approximation Plasma Phenomenology, Semiclassical and Hydrodynamic Models; Electrodynamics. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780198791942.003.0010.

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Chapter 10 reviews both homogeneous and inhomogeneous quantum plasma dielectric response phenomenology starting with the RPA polarizability ring diagram in terms of thermal Green’s functions, also energy eigenfunctions. The homogeneous dynamic, non-local inverse dielectric screening functions (K) are exhibited for 3D, 2D, and 1D, encompassing the non-local plasmon spectra and static shielding (e.g. Friedel oscillations and Debye-Thomas-Fermi shielding). The role of a quantizing magnetic field in K is reviewed. Analytically simpler models are described: the semiclassical and classical limits and the hydrodynamic model, including surface plasmons. Exchange and correlation energies are discussed. The van der Waals interaction of two neutral polarizable systems (e.g. physisorption) is described by their individual two-particle Green’s functions: It devolves upon the role of the dynamic, non-local plasma image potential due to screening. The inverse dielectric screening function K also plays a central role in energy loss spectroscopy. Chapter 10 introduces electromagnetic dyadic Green’s functions and the inverse dielectric tensor; also the RPA dynamic, non-local conductivity tensor with application to a planar quantum well. Kramers–Krönig relations are discussed. Determination of electromagnetic response of a compound nanostructure system having several nanostructured parts is discussed, with applications to a quantum well in bulk plasma and also to a superlattice, resulting in coupled plasmon spectra and polaritons.
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32

Shieh, Kuen-Wey. Least-squares electromagnetic analysis of thin dielectrics using surface equivalence. 2000.

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33

W, Wilmsen Carl, ed. Physics and chemistry of III-V compound semiconductor interfaces. New York: Plenum Press, 1985.

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34

Henriksen, Niels Engholm, and Flemming Yssing Hansen. Introduction to Condensed-Phase Dynamics. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780198805014.003.0009.

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This chapter discusses chemical reactions in solution; first, how solvents modify the potential energy surface of the reacting molecules and second, the role of diffusion. As a first approximation, solvent effects are described by models where the solvent is represented by a dielectric continuum, focusing on the Onsager reaction-field model for solvation of polar molecules. The reactants of bimolecular reactions are brought into contact by diffusion, and the interplay between diffusion and chemical reaction that determines the overall reaction rate is described. The solution to Fick’s second law of diffusion, including a term describing bimolecular reaction, is discussed. The limits of diffusion control and activation control, respectively, are identified. It concludes with a stochastic description of diffusion and chemical reaction based on the Fokker–Planck equation, which includes the diffusion of particles interacting via a potential U(r).
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35

Ben, Munk, and Lewis Research Center, eds. The reflection and transmission properties of a triple band dichroic surface: Final technical report. Columbus, Ohio: The Ohio State University, ElectroScience Laboratory, 1990.

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36

J, Bachmann Klaus, and United States. National Aeronautics and Space Administration., eds. P-polarized reflectance spectroscopy: A high sensitive real-time monitoring technique to study surface kinetics under steady state epitaxial deposition conditions. [Washington, D.C: National Aeronautics and Space Administration, 1995.

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37

J, Bachmann Klaus, and United States. National Aeronautics and Space Administration., eds. P-polarized reflectance spectroscopy: A high sensitive real-time monitoring technique to study surface kinetics under steady state epitaxial deposition conditions. [Washington, D.C: National Aeronautics and Space Administration, 1995.

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38

J, Bachmann Klaus, and United States. National Aeronautics and Space Administration., eds. P-polarized reflectance spectroscopy: A high sensitive real-time monitoring technique to study surface kinetics under steady state epitaxial deposition conditions. [Washington, D.C: National Aeronautics and Space Administration, 1995.

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39

M, Nair K., American Ceramic Society Meeting, Symposium on High Strain Piezoelectric Materials, Devices, and Applications (2003 : Nashville, Tenn.), and Symposium on Advanced Dielectric Materials and Multilayer Electronic Devices (2003 : Nashville, Tenn.), eds. Ceramic materials and multilayer electronic devices: Proceedings of the High Strain Piezoelectric Materials, Devices, and Applications, and Advanced Dielectric Materials and Multilayer Electronic Devices Symposia, held at the 105th Annual Meeting of the American Ceramic Society, April 27-30, 2003 in Nashville, Tennessee. Westerville, Ohio: American Ceramic Society, 2004.

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40

Tiwari, Sandip. Semiconductor Physics. Oxford University Press, 2020. http://dx.doi.org/10.1093/oso/9780198759867.001.0001.

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A graduate-level text, Semiconductor physics: Principles, theory and nanoscale covers the central topics of the field, together with advanced topics related to the nanoscale and to quantum confinement, and integrates the understanding of important attributes that go beyond the conventional solid-state and statistical expositions. Topics include the behavior of electrons, phonons and photons; the energy and entropic foundations; bandstructures and their calculation; the behavior at surfaces and interfaces, including those of heterostructures and their heterojunctions; deep and shallow point perturbations; scattering and transport, including mesoscale behavior, using the evolution and dynamics of classical and quantum ensembles from a probabilistic viewpoint; energy transformations; light-matter interactions; the role of causality; the connections between the quantum and the macroscale that lead to linear responses and Onsager relationships; fluctuations and their connections to dissipation, noise and other attributes; stress and strain effects in semiconductors; properties of high permittivity dielectrics; and remote interaction processes. The final chapter discusses the special consequences of the principles to the variety of properties (consequences of selection rules, for example) under quantum-confined conditions and in monolayer semiconductor systems. The text also bring together short appendices discussing transform theorems integral to this study, the nature of random processes, oscillator strength, A and B coefficients and other topics important for understanding semiconductor behavior. The text brings the study of semiconductor physics to the same level as that of the advanced texts of solid state by focusing exclusively on the equilibrium and off-equilibrium behaviors important in semiconductors.
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41

T. Wave Phenomena. Courier Dover Publications, 2014.

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