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Fromille, Samuel S. IV. "Novel Concept for High Dielectric Constant Composite Electrolyte Dielectrics." Thesis, Monterey, California. Naval Postgraduate School, 2013. http://hdl.handle.net/10945/53408.
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Approved for public releaseThis research was part of an ongoing program studying the concept of multi-material dielectrics (MMD) with dielectric constants much higher than homogenous materials. MMD described in this study have dielectric constants six orders of magnitude greater than the best single materials. This is achieved by mixing conductive particles with an insulating surface layer into a composite matrix phase composed of high surface area ceramic powder and aqueous electrolyte. Specifically examined in this study was micron-scale nickel powder treated in hydrogen peroxide (H2O2) loaded into high surface area alumina powder and aqueous boric acid solution. This new class of dielectric, composite electrolyte dielectrics (CED), is employed in an electrostatic capacitor configuration and demonstrated dielectric constant of order 10 [raised to the 10th power] at approximately 1 Volt. Additionally, it is demonstrated that treated nickel can be loaded in high volume fractions in the CED configuration. Prior studies of composite capacitors indicated a general limitation due to shorting. This results from the onset of percolation due to excess loading of conductive phases. Insulated particles described herein are successfully loaded up to 40% by volume, far above typical percolation thresholds. Simple models are presented to explain results.
Lieutenant, United States Navy
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Eusner, Thor. "Determining the Preston constants of low-dielectric-constant polymers." Thesis, Massachusetts Institute of Technology, 2006. http://hdl.handle.net/1721.1/36308.
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Thesis (S.B.)--Massachusetts Institute of Technology, Dept. of Mechanical Engineering, 2006.Includes bibliographical references (leaf 30).
An important step in the manufacture of integrated circuits (ICs) is the Chemical Mechanical Polishing (CMP) process. In order to effectively use CMP, the removal rates of the materials used in ICs must be known. The removal rate of a given material by CMP can be determined once its Preston constant is known. The objectives of this work were to develop a method to determine the Preston constants and to measure the Preston constants of four low-dielectric-constant (low-k) polymers, labeled A, B, C, and D, and Cu. A weight-loss method, which measures the weight difference between the initial wafer and the polished wafer, provided repeatable results. The Preston constants ranged from 1.01 to 5.96 x10-'3 m2/N. The variation in measurements of the Preston constant ranged from 16% to 31%. The Preston constant of Cu was found to be 1.60 + 0.50 x10-13 m2/N. Of the four polymers, Polymer A had the smallest Preston constant, 1.01 i- 0.30 x10-13 m2/N. It was also determined that there is an approximate inverse linear relationship between the Preston constant of the four low-k polymers and their Young's moduli of elasticity. An approximate inverse linear relationship between the Preston constant of the four low-k polymers and the hardness was also observed.
by Thor Eusner.
S.B.
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Long, Ernest Edward. "Electrochemistry in low dielectric constant media." Thesis, University of Liverpool, 1992. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.316974.
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Cho, Taiheui. "Anisotropy of low dielectric constant materials and reliability of Cu/low-k interconnects /." Digital version accessible at:, 2000. http://wwwlib.umi.com/cr/utexas/main.
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BERNAL, JOSÉ IGNACIO MARULANDA. "MICROWAVE DEVICES USING HIGH DIELECTRIC CONSTANT FILMS." PONTIFÍCIA UNIVERSIDADE CATÓLICA DO RIO DE JANEIRO, 2010. http://www.maxwell.vrac.puc-rio.br/Busca_etds.php?strSecao=resultado&nrSeq=17115@1.
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COORDENAÇÃO DE APERFEIÇOAMENTO DO PESSOAL DE ENSINO SUPERIORA crescente demanda por dispositivos portáveis de tamanho e peso cada vez mais reduzidos vem estimulando a busca por materiais de alta constante dielétrica e baixas perdas na faixa de freqüência de microondas capazes de permitir a integração e miniaturização de circuitos. No presente trabalho foi realizado um estudo teórico e experimental sobre a utilização de filmes de alta constante dielétrica na fabricação de dispositivos passivos de microondas de tamanhos reduzidos. Foi feita uma análise no domínio da freqüência sobre a influência desses filmes nas características de diferentes configurações de linhas de transmissão planares com múltiplas camadas dielétricas. A partir dessa análise, foi escolhida a configuração, denominada aqui de QCPW (Quase-Coplanar Waveguide), que permite a realização prática de estruturas com diversos valores de impedância utilizando dimensões transversais confortáveis. Filmes espessos de compostos de titanato de cálcio e de titanato de magnésio depositados pelo método de screen-printing e filmes finos de titanato de estrôncio por RF Magnetron Sputtering foram fabricados e caracterizados. O método do ressoador linear CPW e da linha de transmissão CPW foram empregados para determinar o valor da constante dielétrica e da tangente de perdas desses filmes na faixa de freqüência de microondas e à temperatura ambiente. O método do ressoador linear CPW foi adaptado e aperfeiçoado para fornecer resultados satisfatórios para o caso dos filmes finos. Finalmente, foram projetados, analisados e fabricados, pela primeira vez, transformadores de impedância em linhas de transmissão (TLT) de tamanho reduzido e com resposta banda larga baseados na configuração QCPW utilizando filmes de alta constante dielétrica.
The growing demand for portable devices with more reduced size and weight has stimulated the search for materials with high dielectric constant and low losses in the microwave frequency range allowing circuit integration and miniaturization. In this work, a theoretical and experimental study of the use of high dielectric constant films in the fabrication of microwave passive devices with reduced sizes has been made. A frequency domain analysis of the influence of these films on the characteristics of different configurations of multilayer transmission lines has been done. From this analysis, a configuration, called here as QCPW (Quasi-Coplanar Waveguide), that allows a practical implementation of structures with several values of impedance using comfortable transversal dimensions was chosen. Composite thick films of calcium titanate and magnesium titanate deposited by screen-printing and thin films of strontium titanate deposited by RF Magnetron Sputtering have been elaborated and characterized. CPW linear resonator method and CPW transmission line have been used to determinate the value of the dielectric constant and loss tangent of these films in the microwave frequency range at room temperature. The CPW linear resonator method was adapted and improved in order to provide satisfactory results for the case of thin films. Finally, for the first time, impedance transmission line transformers (TLT) with reduced size and wide-band response, based on the QCPW configuration using high dielectric constant films have been designed, analyzed, and fabricated.
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Braganza, Clinton Ignatuis. "High Dielectric Constant Materials Containing Liquid Crystals." Kent State University / OhioLINK, 2009. http://rave.ohiolink.edu/etdc/view?acc_num=kent1248065159.
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Mercer, Sean R. "Online microwave measurement of complex dielectric constant." Doctoral thesis, University of Cape Town, 1990. http://hdl.handle.net/11427/8342.
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Includes bibliographical references.This dissertation examines the problem of on-line measurement of complex dielectric constant for the purpose of dielectric discrimination or product evaluation using microwave techniques. Various methods of signal/sample interaction were studied and consideration was given to the problem of sorting irregularly shaped discrete samples. The use of microwave transmission and reflection measurements was evaluated. The signal reflection methods were deemed to be best suited to applications with constant geometry feed presentation ( ie. a continuous, homogeneous product stream with little variation in surface geometry).
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Dhanapala, Hembathanthirige Yasas. "Dielectric Constant Measurements Using Atomic Force Microscopy System." Wright State University / OhioLINK, 2012. http://rave.ohiolink.edu/etdc/view?acc_num=wright1347907325.
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Tanner, Carey Marie. "Engineering high dielectric constant materials on silicon carbide." Diss., Restricted to subscribing institutions, 2007. http://proquest.umi.com/pqdweb?did=1459913391&sid=1&Fmt=2&clientId=1564&RQT=309&VName=PQD.
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Shan, Xiaobing Cheng Zhongyang. "High dielectric constant 0-3 ceramic-polymer composites." Auburn, Ala, 2009. http://hdl.handle.net/10415/1820.
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Cabral, Flávio Pandur Albuquerque. "Medidas das constantes dielétricas e deslocamento elétrico em dielétricos: desenvolvimento da técnica e metodologia." Universidade de São Paulo, 1998. http://www.teses.usp.br/teses/disponiveis/76/76132/tde-08042014-151001/.
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Desenvolveu-se um sistema para medir a constante dielétrica complexa de amostras dielétricas, de construção simples, versátil e de baixo custo. A medida é feita aplicando-se uma tensão senoidal e fazendo-se a aquisição do sinal aplicado e do sinal da resposta elétrica (carga elétrica). Emprega-se uma placa A/D para a aquisição de dados com taxa de amostragem de 100 Ksamples/seg e através da transformada de Fourier discreta destes sinais determina-se a impedância complexa da amostra, a partir da qual calcula-se a constante dielétrica complexa. A placa utilizada e o circuito de medida da carga elétrica introduzem defasagens indesejáveis nos sinais, cujas correções são feitas através de programa no computador usado para aquisição dos sinais. O sistema mostra um desempenho similar àqueles dos equipamentos comerciais para freqüências no intervalo de 0,1H.z a 1KHz, sendo testado com componentes resistivos e capacitivos e posteriormente em amostras de Teflon FEP, poli(fluoreto de vinilideno) e seus copolímeros com trifluoretileno. O sistema também foi utilizado para medir o deslocamento elétrico nos polímeros ferroelétricos sob a aplicação de campos elevados. Neste caso determinaram-se as curvas de histerese dielétrica e os deslocamentos de primeira, segunda e terceira ordem.A low cost and a simple experimental system for measuring the complex dielectric constant of dielectric samples were developed. Measurements were performed measuring the electric charge response resulting from the application of a sinusoidal voltage. The system was based on an A/D acquisition board with sampling rate of 100 Ksamples/sec. The complex impedance was calculated using the discrete Fourier transform from which the complex dielectric constant was found. The phase differences introduced by the A/D board and the amplifiers circuits were connected by software. The setup showed that the results are comparable to that ones obtained with commercial impedance analyzers in the range of frequencies between 0.1 Hz and 1 KHz. Such measurements were obtained using resistors and/or capacitors and also using samples of Teflon FEP, PVDF and its copolymers with trifluorethylene. The setup was also capable to measure the electric displacement in ferroelectric polymers submitted to high fields. Hysteresis loops and the nonlinear electric displacement of first, second and third order were measured.
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Wang, Henry F. S. (Henry Fu-Sen). "Dielectric Relaxation of Aqueous Solutions at Microwave Frequencies for 335 GHz. Using a Loaded Microwave Cavity Operating in the TM010 Mode." Thesis, University of North Texas, 1994. https://digital.library.unt.edu/ark:/67531/metadc279039/.
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The frequency dependence and temperature dependence of the complex dielectric constant of water is of great interest. The temperature dependence of the physical properties of water given in the literature, specific heat, thermal conductivity, electric conductivity, pH, etc. are compared to the a. c. (microwave) and d. c. conductivity of water with a variety of concentration of different substances such as HC1, NaCl, HaS04, etc. When each of these properties is plotted versus inverse absolute temperature, it can be seen that each sample shows "transition temperatures". In this work, Slater's perturbation equations for a resonant microwave cavity were used to analyze the experimental results for the microwave data.
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Sun, Minwei. "Applying zeolites as low dielectric constant (low-k) materials." Diss., UC access only, 2009. http://proquest.umi.com/pqdweb?index=14&did=1907180231&SrchMode=1&sid=4&Fmt=2&VInst=PROD&VType=PQD&RQT=309&VName=PQD&TS=1270059102&clientId=48051.
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Lu, Jiongxin. "High dielectric constant polymer nanocomposites for embedded capacitor applications." Diss., Atlanta, Ga. : Georgia Institute of Technology, 2008. http://hdl.handle.net/1853/26666.
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Thesis (Ph.D)--Materials Science and Engineering, Georgia Institute of Technology, 2009.Committee Chair: Wong, C. P.; Committee Member: Jacob, Karl; Committee Member: Liu, M. L.; Committee Member: Tannenbaum, Rina; Committee Member: Wang, Z. L.. Part of the SMARTech Electronic Thesis and Dissertation Collection.
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Liu, Jiangping. "Prediction of Fluid Dielectric Constants." BYU ScholarsArchive, 2011. https://scholarsarchive.byu.edu/etd/2787.
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The dielectric constant or relative static permittivity of a material represents the capacitance of the material relative to a vacuum and is important in many industrial applications. Nevertheless, accurate experimental values are often unavailable and current prediction methods lack accuracy and are often unreliable. A new QSPR (quantitative structure-property relation) correlation of dielectric constant for pure organic chemicals is developed and tested. The average absolute percent error is expected to be less than 3% when applied to hydrocarbons and non-polar compounds and less than 18% when applied to polar compounds with dielectric constant values ranging from 1.0 to 50.0. A local composition model is developed for mixture dielectric constants based on the Nonrandom-Two-Liquid (NRTL) model commonly used for correlating activity coefficients in vapor-liquid equilibrium data regression. It is predictive in that no mixture dielectric constant data are used and there are no adjustable parameters. Predictions made on 16 binary and six ternary systems at various compositions and temperatures compare favorably to extant correlations data that require experimental values to fit an adjustable parameter in the mixing rule and are significantly improved over values predicted by Oster's equation that also has no adjustable parameters. In addition, molecular dynamics (MD) simulations provide an alternative to analytic relations. Results suggest that MD simulations require very accurate force field models, particularly with respect to the charge distribution within the molecules, to yield accurate pure chemical values of dielectric constant, but with the development of more accurate pure chemical force fields, it appears that mixture simulations of any number of components are likely possible. Using MD simulations, the impact of different portions of the force field on the calculated dielectric constant were examined. The results obtained suggest that rotational polarization arising from the permanent dipole moments makes the dominant contribution to dielectric constant. Changes in the dipole moment due to angle bending and bond stretching (distortion polarization) have less impact on dielectric constant than rotational polarization due to permanent dipole alignment, with angle bending being more significant than bond stretching.
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Sun, Yang. "Dielectric Properties of CaCu3Ti4O12 and Its Related Materials." University of Akron / OhioLINK, 2006. http://rave.ohiolink.edu/etdc/view?acc_num=akron1153884252.
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Chan, Christina Ye. "Waves, scale, sand, and water : dielectric constant of unconsolidated sediments." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1999. http://www.collectionscanada.ca/obj/s4/f2/dsk1/tape8/PQDD_0015/NQ46327.pdf.
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Blanco, Agnes M. Padovani. "Low dielectric constant porous spin-on glass for microelectronic applications." Diss., Georgia Institute of Technology, 2002. http://hdl.handle.net/1853/11840.
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Butterworth, Sean. "Shape and chemical anisotropic particles in low dielectric constant media." Thesis, University of Manchester, 2013. https://www.research.manchester.ac.uk/portal/en/theses/shape-and-chemical-anisotropic-particles-in-low-dielectric-constant-media(d8ace7a1-8993-4a6b-a50d-2a2ea71c10f8).html.
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Electrophoretic displays (EDPs) are an attractive low power technology for small to large area displays. Such display technology has seen a surge of research interest with the launch of successful e-readers in the market place, owing to their lower power consumption and paper-like quality. This work aims to look at the influence of shape on the electrophoretic mobility of particles for such devices. Crosslinked poly(methyl methacrylate) (PMMA) precursor particles with a narrow size distribution were produced by non aqueous dispersion polymerisation utilising a pump-feed method. To produce shape anisotropic particles an adapted version of the dynamic swelling method for polar media was chosen. Suitable monomers were screened by the use of Hansen solubility theory to find monomers which interact with PMMA but not the solvent. It was found that 2- hydroxyethyl methacrylate (HEMA) and N-hydroxyethyl acrylamide (HEAm) were two such suitable monomers, methyl methacrylate (MMA) was also used as a control series.It was found that cluster-like particle morphologies could be produced by the MMA system by the inclusion of small quantities of crosslinking monomer. This was due to precipitation of higher molecular weight polymer segments to the seed particle surface. The cluster-like morphology could be enhanced by use of a polar crosslinking monomer and by sequential reactions. For the polar system, it was found that the reactions with pure monomer were unclean, due to the solubility mismatch of the monomer and the solvent system. This was overcome by a copolymerisation with MMA. The system showed different particle morphologies could be produced by varying the polar monomer content. In one case a sample of pure dumbbell-like particles could be produced. These dumbbell-like particles are thought to be chemical as well as shape anisotropic owing to monomer composition. EPD evaluation for the particles was undertaken and showed that all particles can become highly charged in low dielectric constant media, but that the shape anisotropic particles are prone to adsorption to the cell walls and electrodes.The work outlined in this thesis shows the first reporting of shape anisotropic polymeric particles produced in low dielectric constant solvents system.
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Gramse, Georg. "Studying Electrostatic Polarization Forces at the Nanoscale. Dielectric constant of supported biomembranes measured in air and liquid environment." Doctoral thesis, Universitat de Barcelona, 2012. http://hdl.handle.net/10803/83359.
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The objective of my thesis was to develop novel techniques and methods to probe the dielectric properties of biomembranes in air and their natural environment - liquid solution. The dielectric constant ε(r) of biomembranes is a parameter especially important in cell electrophysiology as it ultimately determines the ion membrane permeability, the membrane potential formation or the action potential propagation velocity, among others. However, no technique is able to provide this quantity with the required nanoscale spatial resolution and in electrolyte solution.
AFM is an extremely versatile tool to investigate electric properties at the nanoscale, and hence constitutes a good candidate technique to approach the quantification of the nanoscale dielectric properties of biomembranes. Although a few AFM techniques exist, capable of investigating polarization properties, it remains difficult to extract quantitative values of εr from the measurements, especially in liquid environment.
One reason for this is on the instrumental side, since for studies at the nanoscale very small quantities have to be measured, that can be easily overwhelmed by electronic noise as it maybe for example the case in current sensing based techniques. Electrostatic Force sensing techniques may in principle have an advantage here, since the used cantilevers for force detection are extremely sensitive and naturally, undesired nonlocal electrical signals from the cantilever are suppressed.
Another important aspect is attributed to a lack of sufficiently precise quantitative models to relate measured force with the dielectric constant value of the sample. Indeed, for measurements on insulating substrates like mica or glass that are sometimes required for biological samples, still no quantitative model is available. Moreover, successful measurements of dielectric properties in liquid media, that is fundamental for the functionality of some biological samples, has not been shown until now.
As consequence of the existing limitations for quantitative dielectric imaging the objectives of this work were to extend the quantitative capabilities of Electrostatic Force Microscopy to image the dielectric constant of biomembranes with nanoscale spatial resolution. In particular, the three objectives I addressed in the work are:
1. To evaluate the possibility to perform quantitative dielectric measurement on biomembranes on metallic substrates and in air with Electrostatic Force Microscopy that may offer higher precision with respect to current sensing techniques.
2. To extend the applicability of quantitative dielectric measurement to the case of thick insulating substrates in order to facilitate its use with biomembranes that cannot be prepared on metallic substrates.
3. To develop a setup for dielectric imaging in liquid environment based either on current detection or on the principles of electrostatic force microscopy. Finally to perform nanoscale dielectric measurements on bio-membranes in their natural liquid environment.
How each of these objectives could be reached is detailed in my thesis.El objetivo de mi tesis era desarrollar nuevas técnicas y métodos para medir las propiedades dieléctricas de biomembranas en aire y en su medio natural, es decir, en solución líquida. La constante dieléctrica (εr) de las biomembramas es un parámetro especialmente importante en la electrofisiología celular, ya que fundamentalmente determina la permeabilidad iónica de la membrana, la formación del potencial de membrana o la velocidad de propagación del potencial de acción, entre otros. El AFM es una herramienta extremadamente versátil para investigar propiedades eléctricas a nanoescala, y por ello constituye una buena técnica candidata para la cuantificación de las propiedades dieléctricas de las biomembranas a nanoescala. Aunque existen algunas técnicas basadas en el AFM capaces de investigar las propiedades de polarización, continúa siendo difícil extraer valores cuantitativos de εr de las medidas, especialmente en medio líquido. Una de las razones radica en la parte instrumental, ya que para los estudios en la nanoescala tienen que medirse cantidades muy pequeñas, y este proceso puede verse entorpecido por ruido electrónico como puede ser el caso, por ejemplo, en las técnicas basadas en la detección de corriente eléctrica. En principio, las técnicas de detección de fuerza electroestática disponen aquí de una ventaja, ya que las sondas utilizadas para la detección de la fuerza son extremadamente sensibles y naturalmente se suprimen señales eléctricas no locales y no deseadas. Otro aspecto importante se atribuye a la falta de modelos cuantitativos suficientemente precisos para relacionar la fuerza medida con el valor de la constante dieléctrica de la muestra. En realidad, para realizar medidas en sustratos aislantes como son la mica o el vidrio, que a veces son necesarios para muestras biológicas, todavía no se dispone de ningún modelo cuantitativo. Por otra parte, hasta ahora no se han publicado medidas de propiedades dieléctricas en medio líquido, que para algunas muestras biológicas es fundamental para mantener la funcionalidad. Como consecuencia de las limitaciones existentes de las medidas dieléctricas, el objetivo de este trabajo fue extender las capacidades cuantitativas de la Microscopía de Fuerzas Eletroestáticas para hacer imágenes dieléctricas de biomembranas con resolución espacial a nanoescala en substratos conductores, aislantes y en medio líquido.
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Ziemath, Ervino Carlos. "Medidas dielétricas em cristal de KCN a ultrabaixas freqüências." Universidade de São Paulo, 1985. http://www.teses.usp.br/teses/disponiveis/54/54132/tde-11092007-102959/.
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Realizamos medidas dielétricas a baixas freqüências (10-2-40Hz) em cristais de KCN empregando uma ponte de ultra-baixas freqüências, bem como a altas freqüências (50-104 Hz) empregando uma ponte de capacitância comercial (General Radio). As curvas de perda dielétrica mostraram um bom ajuste entre altas e baixas freqüências. Obtivemos picos de perda dielétrica num intervalo de cinco décadas e entre 53 e 78K. Os picos destas curvas foram ajustados segundo uma equação de Arrhenius, e obtivemos uma energia de ativação de 0,148 eV e um tempo de relaxação característico de 6,53 x 10-15s para os dipolos CN-. Para temperaturas entre 53 e 59K observamos o aparecimento gradual de um segundo pico de perdas de 25Hz. Sua origem ainda não é conhecida, mas isto sugere que o cristal de KCN pode apresentar propriedades de um dielétrico composto, com dois mecanismos de relaxação distintos.Dielectric measurements were performed at low frequencies (10-2- 40Hz) with an ultra-low frequency bridge in KCN crystals , as well as at high frequencies (50-10-4 Hz) employing a commercial capacitance bridge (General Radio). The dielectric loss curves show a good adjustment between the high and low frequencies. We obtain dielectric loss peaks in a window of five decades and in the range of 53 and 78 K. The peaks of these curves were fitted with an Arrhenius expression giving for the CN- dipoles an activation energy of 0,148eV and an attempt relaxation time of 6,53x10-15. At temperatures between 53 and 59K we observed the gradual appearing of a second loss peak for frequency of 25Hz. Its origin is not yet known butt his suggestt that the KCN, crystal may present compound dielectric properties , with - two distinct relaxation mechanisms.
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Rao, Yang. "High dielectric constant materials development and electrical simulation of embedded capacitors." Diss., Georgia Institute of Technology, 2001. http://hdl.handle.net/1853/20014.
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Simkovic, Viktor. "Novel Low Dielectric Constant Thin Film Materials by Chemical Vapor Deposition." Thesis, Virginia Tech, 1999. http://hdl.handle.net/10919/35627.
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A modified CVD reactor was designed with a deposition chamber capable of accomodating 8" wafers, with the capacity to remotely pyrolyze two different precursors. The design was based on a previous working reactor, with the most notable improvements being a showerhead design for more even delivery of gaseous precursor and a separate heating control of the substrate holder and deposition chamber walls. The performance of the reactor was analyzed by testing the pressure gradients within and the thickness uniformity of films deposited on 8" wafers. The reactor exhibited a linear pressure gradient within, and the thickness uniformity was excellent, with a slight increase in thickness towards inlet of the showerhead. The thickness difference between the maximum and minimum thickness on an 8" wafer was 14%. Films of polyparaxylylene (PPXN), polychloroparaxylylene (PPXC), SiO2, and PPXC/SiO2 were deposited, with deposition rates and indices of refraction comparable to those obtained on the old reactor design. A full factorial study was performed to determine the effect of the substrate temperature, the sublimation temperature, and the pyrolysis temperature on the deposition rates of PPXC. It was determined that the substrate temperature has the greatest effect, with about 50% contribution, and deposition rates increased with decreasing substrate temperature. The sublimation temperature contributed 25%, with increasing sublimation rates leading to higher deposition rates. The pyrolysis contributes very little, with about 2%, and the variance ratio did not fall within a 90% confidence level.
A low dielectric constant polymer, poly(tetrafluoro-p-xylylene) (VT-4), was synthesized by chemical vapor deposition from 4,5,7,8,12,13,15,16-octafluoro-[2.2]-paracyclophane (DVT-4). The main motivation was to find a cheaper alternative to poly( alpha, alpha , alpha ', alpha '-tetrafluoro-p-xylylene) (AF-4) with similar properties. The dielectric constant of VT-4 was measured as 2.42 at 1 MHz, and the in-plane and out-of-plane indices of refraction were 1.61 and 1.47 at 630 nm. The large negative birefringence suggests a low out-of-plane dielectric constant, which is desired for interlayer dielectrics. The VT-4 polymer was found to be stable at 460 oC by thermogravimetric analysis (TGA).
Polymer/Siloxane nanocomposites were studied as an alternate path to a polymer/silica composite. This study showed that incorporation of a four-ringed liquid siloxane precursor into the parylene PPXC is not feasible. A solid precursor cube-like molecule, vinyl-T8, was incorporated with ease. Pyrolysis of vinyl-T8 at different temperatures revealed complex behavior, with the formation of polymerized vinyl-T8 (through free radical addition at the vinyl groups) as well as silica-like structures forming above 500 oC as a result of the breaking up of the cage structure of vinyl-T8. Codepositions of PPXC and vinyl-T8 were then examined as a possible path towards a polymer/silica nanocomposite. At deposition temperatures below 5o C, precipitation of excess vinyl-T8 into cubic micron-sized crystals occurred. As this was undesirable, studies were continued at higher deposition temperatures. A Taguchi orthogonal array was set up to study the effect of the sublimation temperatures of the two precursors as well as the pyrolysis temperature and the substrate temperature on the deposition rate, the index of refraction and the weight loss after a 500 oC anneal. The deposition rate depended mostly on the sublimation temperature of the PPXC and the substrate temperature. The lowest index of refraction (and thus the lowest dielectric constant) was obtained with the lowest sublimation temperatures of 134 oC for PPXC and 195o C for vinyl-T8 and a pyrolysis temperature of 200 oC. Each of the factors was found to have an effect on the index of refraction, with the sublimation temperature of vinyl-T8 having the most influence. The films degraded at 500 oC, indicating that post-deposition annealing of the films did not lead to a conversion of the vinyl-T8 to a SiO2 -like structure (which would be stable at that temperature). X-ray diffraction spectra of the films revealed peaks which were not present for any of the vinyl-T8 films or characteristic of PPXC. Therefore, some type of interaction between the two components occurred and affected the morphology, most likely the formation of a block copolymer. Thus, though polymer/silica films were not attained, the resulting composites had comparable properties with higher deposition rates and a cleaner process.
Master of Science
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Song, Yi. "AC conductivity and dielectric constant of systems near the percolation threshold /." The Ohio State University, 1986. http://rave.ohiolink.edu/etdc/view?acc_num=osu148726754698361.
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Gillespie, David. "Electrokinetic and electrostatic properties of highly charged colloids in low-dielectric media." Thesis, University of Bristol, 2016. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.690761.
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Marques, Duarte da Paz Ana Marta. "Water content measurement in woody biomass : using dielectric constant at radio frequencies." Licentiate thesis, Mälardalen University, School of Sustainable Development of Society and Technology, 2008. http://urn.kb.se/resolve?urn=urn:nbn:se:mdh:diva-963.
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The will for replacement of fossil fuels increased the use of woody biomass as fuel in heating and power plants. An important parameter for the use woody biomass as fuel is the water content of biomass as it influences the heating value and thereby the combustion control and pricing. Currently, water content is determined using the gravimetric method by drying samples in an oven. This method is neither fast nor representative, as the water content can vary largely in different parts of the container which raised the need to develop sensors that are able to measure water content of biomass on-line and in a representative way.This thesis presents results from studies on the measurement of water content of woody biomass with radio frequency. Included are the study on the influence of temperature in the measurements, the use of dielectric mixing models to explain the dielectric behavior of woody biomass and the application of the measurement principle to full-scale.
It was found that varying temperature between 1 and 62 °C did not influence the prediction of water content in biomass. It was possible to explain the behavior of the dielectric constant of woody biomass with a model with physical basis using empirically obtained parameters. Application of the principle to full-scale had positive results but larger prediction error than laboratory-scale measurements.
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Troutman, Tia Shawana. "Development of low viscosity, high dielectric constant polymers for integral passive applications." Thesis, Georgia Institute of Technology, 1999. http://hdl.handle.net/1853/8683.
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Agraharam, Sairam. "Plasma assisted deposition of low dielectric constant fluorocarbon materials for microelectronic applications." Diss., Georgia Institute of Technology, 2000. http://hdl.handle.net/1853/11896.
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Chen, Che-yu, and 陳哲宇. "Glasses with high dielectric constant." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/6fd2nq.
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碩士大同大學
材料工程學系(所)
102
Recently, niobium glasses receive much attention. Compared to other glass systems, niobium glasses have the advantages of high dielectric constant. However, the color of niobium glasses limits its application on optical components. The glass system SrO-BaO-Nb2O5-SiO2 has been investigated in this thesis. The expectation be understood that adding Sb2O5, P2O5, BaF2 ,KF and change ratio of Sr/Ba regarding to each property of this glass system. Hope to achieve the purpose of making niobium glass achromatic as far as maintaining a high dielectric constant in the premise. The experiments show that: for glass optical transmittance in visible light, adding Sb2O5 and BaF2 content can obtain the maximum (90% at ?軯550nm).
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Lai, Bo-Shen, and 賴柏伸. "Dielectric loss estimation from dielectric constant usingKramers-kronig relation." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/t75457.
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碩士國立臺灣大學
電信工程學研究所
106
In this thesis, a method which can estimate dissipation factor (Df) from dielectric constant (Dk) is proposed. By using measured dielectric constant, the imaginary part of permittivity can be obtained through Kramers-Kronig relation. Also, the error generated by lacking data at high frequencies in truncated Kramers-Kronig relation would be revised and discussed in detail. Furthermore, four methods, including transmission coefficient extraction of both strip line (SL) and substrate integrated waveguide (SIW) from through, reflection and line (TRL) method , microstrip line ring resonators and open resonators which are commonly applied to measure Dk and losses, are implemented to validate the accuracy and reliability of proposed method, and to verify its feasibility. Since most of printed circuit board (PCB) based measurements for permittity can only directly obtain the dielectric constant and total losses (with dielectric loss, radiation loss and conductor loss together), researchers must calculate the conductor loss and radiation loss in order to find out dielectric loss. However, in many cases, conductor losses will depend on different circuit schematics, conductor materials, manufacturing progresses and so on. The calculation of conductor losses usually refers to some approximation theories and therefore the dielectric loss cannot be obtain precisely. Unlike these methods, the proposed method calculates the dielectric loss from dielectric constant through Kramers-Kronig relationsince losses can only slightly affect the results of DK. Besides, it can also measure DF in a broad frequency band, which is different from the measurements with resonators. Nevertheless, there are problems when utilizing Kramers-Kronig relation. First, the Kramers-Kronig relation should have the limits of integration from zero to infinite, but in reality only limited frequency data can be acquired. The truncated KK relation will diverge and include numerous error. Therefore, the data should be modified to eliminate the divergent terms. Second, the contribution of outband data should be considered or the results will be much smaller at the edge of frequency bands. Therefore, the extrapolation should be applied with a reasonable model to estimate dielectric constant in high frequencies. In our method, muti-debye model is investigated to create data in high frequencies ,and the estimated results can be more precise in comparison to the results adopting truncated data. Last but not the least, , the equation of Kramers-Kronig relation exists a singular point. When integrating through frequency, the singular point causes disperse. However, through integration by part, the equation can be split into three parts. Then, the dispersion part can be isolated (this part would be a constant). Finally, to verify the propose method, the measurement results of strip line is adopted. The dissipation factor of wide frequency band is obtained through Kramers-Kronig relation, and then it is compared with three measurement results from different resonators in order to discuss the errors.
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李勃學. "Effect of Extreme Ultra-Violet Radiation on High Dielectric Constant Dielectrics." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/85995804593938080878.
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碩士國立交通大學
電子研究所
98
In this thesis, EUV radiation damage on high dielectric constant (high-k) dielectric with metal gate is evaluated. TiN is selected as the metal gate electrode. Five kinds of high-k dielectric are evaluated. They are SiO2, , MOCVD Al2O3, HfAlO, HfSiO and ALD Al2O3. Simple metal-oxide-Si (MOS) capacitor structure was fabricated. We also use SiO2 and Al2O3 as gate dielectrics fabricate Metal-Oxide-Silicon-Field-Effect-Transistor (MOSFET) in order to demonstrate EUV effect on MOSFET. Before and after EUV irradiation, the C-V curves of these five dielectrics have significant change. There are flatband voltage shift, C-V curve distortion and hysteresis increases. Among these five kinds of dielectrics, SiO2 exhibits the best EUV resistance. In high-k materials, Al2O3 suffered the worst radiation tolerance. The MOCVD have the biggest flat band voltage shift and ALD Al2O3 exhibits more interface state and hysteresis increasing. After EUV irradiation the HfSiO generate more interface state in lower energy band gap. The HfAlO also has sensitive EUV irradiation response. The radiation hardness of all dielectrics may be related to hole traps in the dielectric and the EUV absorbing rate. Positive charges (hole traps) and border traps were also generated during EUV exposure. The Id-Vg curve shows that there are Vth shift in both SiO2 and Al2O3 samples which can respond to C-V curve shift with the positive charges be trapped in gate dielectric. We also observed when MOSFETs are in the off-state, the leakage current will raise after EUV irradiation. Measuring the n+-p junction I-V characteristic we find out the leakage current is also affected by EUV. We infer that the edge of S/D region under isolation generated leakage path after EUV irradiation which cause the leakage current when MOSFETs are in off-state. In this thesis we also discuses that weather the device can have self-annealing behavior after EUV irradiation. After storage the samples at room temperature for a long time, the decreasing of radiation induced damages is observed. How to fixed the radiation damage is still under researched.
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Wei, Hsuan-Yi, and 魏易玄. "Investigation of Low-Dielectric constant Hydrogen Silsesqnioxane as Intermetal Dielectric." Thesis, 2002. http://ndltd.ncl.edu.tw/handle/58764277136681114396.
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碩士國立中山大學
物理學系研究所
90
Abstract As ULSI circuits are scaled down to deep submicron regime, interconnect delay becomes increasingly dominant over intrinsic gate delay. To reduce the RC delay time, many low dielectric constant materials have been developed. One of the most promising low-k materials is siloxane-based hydrogen silsesquioxane (HSQ) having the general formula (HSiO3/2)2n, n=2, 3, etc. available as Flowable Oxide (FOx). But low mechanical strength is the problem of HSQ. In order to modify the material composition and mechanical intensity of HSQ, a novel siloxane-based inorganic spin-on material Modified-HSQ has been developed for intermetal dielectric applications. In this thesis, the Intrinsic Properties of M-HSQ was investigated. And the effect of H2, O2 plasma treatment was investigated. Besides, In order to avoid the damage when remove the PR, to achieve small linewidth and reduce linewidth fluctuations. We employed E-Beam lithography to pattern the M-HSQ film. The leakage current of M-HSQ film by E-Beam curing is lower than film by conventional process.
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Vedula, Ramakrishna. "Low dielectric constant materials and processes for interlayer dielectric applications." 2006. https://scholarworks.umass.edu/dissertations/AAI3206194.
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At 0.18 microns and below minimum device dimensions in Ultra Large Scale Integrated Circuits, signal net parasitic delay amounts to 80% of the overall path delay. This leads to serious problems relating to signal timing, crosstalk, noise and power consumption. Although Copper is being used as an alternative to Aluminum interconnects to reduce the resistive component of the RC delays, finding a suitable material to replace Silicon Dioxide (SiO2) as the interlayer dielectric poses serious challenges. Most of the inorganic candidates are variants of SiO2, while the most prominent among polymeric materials belong to the polyparaxylylene family. The primary disadvantage of polyparaxylylene materials is their low thermal stability. While SiO2 based inorganic films exhibit excellent thermal stability, they offer only incremental improvement in the dielectric constant. The thin film deposition technique for these materials is important as it directly impacts the cost of manufacturing. Chemical Vapor Deposition is known to make high purity, conformal thin films, and is compatible with current silicon manufacturing technology. This research is primarily focused to develop materials which have (i) Low dielectric Constant; (ii) High thermal stability, and to deposit them using Chemical Vapor Deposition technique. The vision was to develop a composite thin film material with the thermal stability of SiO2 and the low dielectric constant of paraxylylenes. The first objective of this research was to develop a technique to deposit SiO2 films at near room temperatures. Thin conformal films of SiO2 were deposited at temperatures around 50°C using Di-acetoxy-di-tertiary-butoxy silane (DADBS) as the precursor. The thermal stability, optical and electrical properties of the codeposited thin films were systematically studied. It was possible to control the composition of these films smoothly and these films were shown to be of nanocomposite type. However, the thermal stability of these nanocomposite thin films was only marginally better than that of paraxylylenes. These films were then heat treated under oxygen to 'burn off' the polymer content. It was shown that annealing these films in oxygen environment leaves porous SiO 2 which exhibits the thermal stability of SiO2 and the porosity results in lower dielectric constant.
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Chung-Yi, Lin, and 林宗毅. "Study of the High Dielectric Constant Epoxy." Thesis, 2001. http://ndltd.ncl.edu.tw/handle/04575206753118176023.
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碩士國立交通大學
應用化學系
89
The study focused on the dielectric properties of epoxy resin. The NO2 group shows significant effect on increasing the dielectric constant of the system, and the C≡N group also has similar effect for the polarity of these functional groups. The photoresistor method is used to measure the degradation of the system. The yellowing of the system is caused by the high test temperature or the exposure under the UV light. The study also reports the effect of different curing agent, molecular weight and quantity of PEG modifier on the dielectric properties. The lower molecular weight PEG has higher orientation under the electric field for the polar chain end and high chain mobility, thus shows a higher dielectric constant. The increase of the PEG content also shows a higher polarity and dielectric constant of the system. In addition, the Tg of the system also imparts the increment of the dielectric constant When the Tg is lower than the test temperature, (40℃) the system is at rubbery state and shows a higher dielectric constant. On the contrast, the dielectric constant increment is limited for the higher Tg system. The lower frequency of electric field obtains a higher dielectric constant data for the fully orientation of the molecular chain. The high molecular weight of epoxy resin shows lower crosslinking density and higher dielectric constant. This study uses cyclohexylamine and aniline to synthesize higher molecular weight epoxy and obtains a higher dielectric constant system.
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Alberto, Marco António Curado. "High dielectric constant oxides for CMOS technology." Master's thesis, 2017. http://hdl.handle.net/10316/82960.
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Dissertação de Mestrado Integrado em Engenharia Física apresentada à Faculdade de Ciências e TecnologiaHidrogénio em óxidos de terras raras paramagnéticas (óxido de neodímio) foi investigado através de medidas de espectroscopia de muão positivo obtidas nas instalações da ISIS obtidas com o detector EMU (Laboratório Rutherford Appleton , Reino Unido). Muonio, é como um pesudo-isótopo leve do hidrogénio, usado para imitar a configuração electrónica do hidrogénio. Foram identificados duas configurações do muonio: uma configuração de estado dador no local de ligação com o oxigénio e um estado aceitador no espaço intersticial. Uma componente de relaxação rápida também é observada, no qual é identificada com a estado de transição do muonio durante a sua formação componente de relaxação rápida apresenta uma mudança de frequência negativa no qual se interpretou como o efeito da magnetização para magnética a baixas temperaturas, conjugação com medidas auxiliares de magnetometria realizadas nas instalações do TAIL da universidade de Coimbra. Fio também permitido identificar a energia de barreira no ensaio representado com a dependência de temperatura a transição da fracção em falta que é o estado no qual muonico que se encontra no espaço intersticial a converter para a formação de ligação com o oxigénio, sendo a energia de activação deste processo de 0.5eV, assim como a barreira de energia da difusão a partícula carregada positivamente acima da temperatura ambiente, sendo esta de 0.14 eV Esta foi a primeira tentativa de caracterizar a configuração do hidrogénio em óxidos paramagnéticos usando o muão que é uma sonda magnética sensível a campos locais e os resultados mostram claramente a fiabilidade do método.
Hydrogen in the paramagnetic rare earth oxide Nd2O3 (neodymium sesquioxide) was investigated through muon spin spectroscopy measurements obtained at the EMU instrument of the ISIS Facility (Rutherford Appleton Laboratory, United Kingdom). Muonium, as a light pseudo-isotope of hydrogen, was used to mimic the electronic configurations of hydrogen. Both the donor-like configuration at an oxygen-bound site and the acceptor-like configuration at an interstitial site have been identified. A fast relaxing component is also observed, which is identified with a transition muonium state occurring during the formation. This fast component presents a negative frequency shift that we interpret as an effect of the paramagnetic magnetization at low-temperatures, in conjunction with ancillary magnetometry measurements performed at the TAIL Facility of the University of Coimbra. The temperature dependence of the fractions allows identifying the conversion barrier from the interstitial configuration to the oxygen-bound configuration with an activation energy of 0.5 eV, as well as the barrier height from the transition state to the oxygen-bound configuration at 0.14 eV. The diffusion of the positively charged species above room temperature is also identified as an activated process with an activation energy of 0.14 eV. This is the first attempt to characterize the hydrogen configurations at a paramagnetic oxide using the sensitive muon probe, and the results clearly show the feasibility of the method.
FCT
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Chuang, Yueh-Cheng, and 莊岳鎮. "Characterization of Low Dielectric Constant Spin-On Polymers for Interlayer Dielectric Applications." Thesis, 1996. http://ndltd.ncl.edu.tw/handle/09543450452235962948.
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碩士國立交通大學
電子研究所
84
For deep submicron CMOS technology the speed of the devices is limited more by interconnect delay and less by intrinsic gate delay. Change in the dielectric materials to reduced capacitance is probably one of the bestapproach to interconnection delay, also to power disspation and crosstalk. this thesis presents the film characteristics, thermal stability, leakage current and stress variations of three type of low-k SOG. Experimental results are compared with those of a conventional SOG.
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Tu, Hsien Ming, and 杜賢明. "Study of Advanced Low Dielectric Constant Materials for ULSI Intermetal Dielectric Applications." Thesis, 1999. http://ndltd.ncl.edu.tw/handle/50335301534663409081.
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碩士國立交通大學
電子工程系
87
For ULSI circuits when feature size is scaled into the deep submicron region, The speed of the devices will be significantly limited by the interconnect delay. Low dielectric constant (K) materials will play a major role, with copper as the interconnect material, in offering to minimize the interconnect RC delay. A variety of inorganic or organic polymers, xerogel are being considered for low k applications. This thesis will describe two new siloxanes and porous xerogel with ultra-low dielectric constant for low k applications. We will explore thermal stability, moisture uptake, stress variations, leakage current and electrical dielectric breakdown strength of three types of low-k materials. In this work, the application of low-k to copper metallization is also investigated. Without MoN barrier, the Cu/T23(cured at 350C)/Si MOS capacitors are very leak after 3500C anneal and the thermal stability of Cu/T24(cured at 500C)/Si MOS capacitors is found to reach 400C. For the Cu/MoN/ T24(cured at 500C)/Si MOS capacitors, the stability temperature is up to 500C.
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Zhang, Sheng 1986. "Interdigitated capacitor sensor for complex dielectric constant sensing." Thesis, 2010. http://hdl.handle.net/2152/ETD-UT-2010-05-1142.
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The objective of this thesis is to develop a complex dielectric properties sensor using interdigitated capacitor (IDC) structure. IDCs are easy to fabricate and because of its planar structure, it can be easily integrated with other sensing components and signal processing electronics. The design, fabrication, modeling, and testing of IDC sensors are presented in this thesis. Design parameters and their influence on sensor's output signals are discussed. Previous IDC models are reviewed and the limitations are studied. A new equivalent circuit model based on the fringing electric field distribution and a novel iterative data extraction algorithm combining Finite-Element Method (FEM) and the equivalent circuit model is studied. Results suggest that the algorithm can accurately extract relatively low dielectric constant and conductivity of material under test (MUT) from measured impedance data.text
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Chen, Jun-Ming, and 陳俊銘. "Process Study of Porous Low Dielectric Constant Materials." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/36452082380840136700.
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碩士樹德科技大學
電腦與通訊研究所
93
As feature sizes of devices are continuously scaled down and shrink into deep submicron regime, the rapid increase in resistance-capacitance (RC) time delay is becoming one of the major bottlenecks for deep submicron devices. Much attention has been paid to the use of porous low dielectric constant materials, instead of conventional SiO2, to reduce interconnect capacitance and address the RC delay problem. This paper discussed the plasma etching process, photoresist removal process, cupper diffusion and mechanical strength improvement of mesoporous silica. In the result of plasma etching, we found that ICP power at 500W, Bias power at 200W, pressure at 10 mTorr and flow ratio of Ar/CF4=40/50 had more optimum etching selectivity. However, larger Ar flow rate result in large surface opening. The flow ratio of Ar/CF4=0/50 had better profile surface, and the large surface opening morphology was not observed. The hydrophobic bond on the surface was destructive by plasma etching, and resulted in higher k and leakage current value. After HMDS surface hydrophobic restoration, the electrical properties were improved. In the result of photoresist removal process, it was found that surface hydrogen bonds were damaged by photoresist removal process. Hydroxyl, formed on the surface, resulted in the absorption of moisture and the damage of electrical properties. After HMDS surface hydrophobic restoration, the electrical properties were improved. In the result of copper which diffused to the porous silica, we found that higher temperature resulted in the increase of k and leakage current value. From the analysis of leakage current mechanism, the annealing temperature at 400℃ belonged to Schottky emission mechanism and it belonged to Poole-Frenkel mechanism when the temperature is between 500 and 600℃. Because of the defect caused by copper diffusion, electronics, which depended on the defect, will jump the energy barrie. So, at higher temperature, Schottky emission will transfer to Poole-Frenkel mechanism. In the mechanical strength improvement, a reflux process was introduced to prepare porous silica solution. It’s elastic modulus increased from 4.4 to 7.0 GPa, and the value increase about 58%. The hardness increased from 0.38 to 0.62 GPa, and the value increased about 5%.
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Tang, Chien-Fu, and 唐健夫. "Study on Siloxane Based Low dielectric Constant Materials." Thesis, 2001. http://ndltd.ncl.edu.tw/handle/25981374709808651073.
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碩士國立交通大學
電子工程系
89
As IC technology moves into the deep submicron regime, it is required to decrease the metal pitch and to increase the number of metal layers for interconnect to accommodate the increased packing density and functional complexity. This makes propagation delay in interconnects becomes an appreciable fraction of the total time delay. Use of the spin on glass (SOG) low dielectric constant material (low-k) as the intermetal dielectric (IMD) results in low inter-line capacitance, high speed, low power dissipation, and low cross-talk noise. An organic SOG, Hybird-Organic —Siloxane-Polymer (HOSP), is one of the promising low dielectric constant materials. The HOSP with dielectric constant of 2.6 has good filling, low stress and comparable enough mechanical strength. In this work, the intrinsic properties of HOSP film, including physical, electrical and thermal stability have been studied. In addition, the compatibity of HOSP film with integration processes has been investigated. In integration processing, photoresist stripping is commonly implemented with O2 plasma ashing and wet stripper solution dipping. Dielectric properties of HOSP film could be degraded during photoresist removal. To mitigate the issue, gas plasma pre-treatments and chemical solution (Trimethylchlorosilane (TMCS) and Hexamethyldisilazane (HMDS)) post-treatments were proposed. Material and electrical analyses were also used to explain these improvements.
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Lin, Zen-Kuan, and 林仁寬. "X-ray Exposure on Low Dielectric Constant Materials." Thesis, 2001. http://ndltd.ncl.edu.tw/handle/77642812227254364342.
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碩士國立中山大學
物理學系研究所
89
Abstract As integrated circuit dimensions continue to shrink, interconnect RC delay becomes an increasingly serious problem. Fabrication of interconnect structures using new materials of low resistivity and low permittivity to replace the traditional Al and SiO2 interconnect technology is in high demand. Specially, copper and low dielectric constant (low-k) polymers show great promise. Among various low-k materials, spin-on glass (SOG) materials have been widely used as an interlayer dielectric in multilevel interconnections because they are applied easily and have relatively low process costs. One class of materials, which offers many of properties of silica (SiO2) hardness, thermal and dimensional stability etc.) are the HOSP (Hybrid Organic-Siloxane-Polymer)and HSQ (Hydrogen Silsesquioxane) represent an important member of this family. HOSP and HSQ exhibits a relatively low dielectric constant (k=2.6-2.8) as compared to SiO2 (k=4.0).It is intrinsically hydrophobic, has reasonable mechanical hardness, and possesses exceptional thermal and dimensional stability (in excess of 400℃). For these reasons, HOSP and HSQ represent an excellent candidate for applications on the multilevel interconnect architecture. On the other hand, etching and PR removal are key technology during the manufactures of multilevel interconnects. X-ray lithography process is adopted to avoid these issues. As a result, a novel X-ray lithography technology for the low-k interlayer has been proposed for fabrication of IC. And it is a low cost process. In this work, the characteristics of PR removal have been investigated. Experimental results have shown that the dielectric properties of HOSP and HSQ are degraded by PR removal process. The X-ray exposure will solve these problems and it will be a useful tool in advance ICs fabrication. The advantage of the X-ray exposure is the direct patterning, avoids the issues during the etching and photoresist striping processes. The part of film exposed by X-ray will be cured and the other part could be dissolved with the solvent. Strictly speaking, these two issues will be overcome by the X-ray curing.
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戴裕國. "Measurement of dielectric constant at microwave frequency range." Thesis, 1991. http://ndltd.ncl.edu.tw/handle/65848869527363926245.
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Chen, Shiu-Sheng, and 陳旭昇. "Percolative BaTiO3/Ni Composites with Improved Dielectric Constant." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/55535939463043312883.
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碩士國立臺灣大學
材料科學與工程學研究所
96
Abstract The properties of ceramic-metal composites exhibit significant change in the neighborhood of percolation threshold, for examples: the dielectric constant increases rapidly and the resistance decreases abruptly. In the present study, two specimen series, BaTiO3/Ni(NO3)2 and BaTiO3/Ni systems are prepared by sintering in N2. The BaTiO3/Ni composites are obtained. The effect of Ni content on the microstructure and the dielectric properties of Ni-doped BaTiO3 are investigated. The experimental results show that the microstructure of BaTiO3 specimen sintered at 1300℃ is composing of only fine grains. When the sintering temperature is above 1330℃, the abnormal grain growth can take place due to the presence of an eutectic liquid. The dielectric constant of BaTiO3 specimen is the highest after sintering at 1300℃( ). The BaTiO3 specimen is insulating after sintering in N2 (1012 ). For the BaTiO3-Ni composites, the XRD patterns show there is no chemical reaction between BaTiO3 and Ni. The relative density is the highest after sintering at 1370℃. The EPMA analysis shows that Ni particles are surrounded by a layer of NiO because of the oxidation. For the BaTiO3/Ni(NO3)2 system, the dielectric constant of the specimens in the neighborhood of the percolation threshold (34.3vol%Ni) exhibits extraordinarily high value when the sintering temperature is 1330℃( ). The dielectric constant of BaTiO3-36vol%Ni specimens after sintering at 1370℃ is about 170000. The magnetic results show that the magnetization increased with increasing Ni content. The specific saturation magnetization of BaTiO3-36vol%Ni composites is about 25 emu/g.
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Chen, Wen-Jen, and 陳玟任. "Study on Porous Ultra Low Dielectric Constant Material." Thesis, 2002. http://ndltd.ncl.edu.tw/handle/42776881244685936298.
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碩士國立雲林科技大學
電子與資訊工程研究所碩士班
90
For deep submicron generation, performance of devices is dominated by propagation delay between metal interconnection. In order to improve this issue , in this thesis, a porous material with ultra low dielectric constant is used to reduced capacitance between metal interconnection to decreasing of RC time delay to enhance the performance of device. In this study, a porous ultra low dielectric constant material- porous HOSP is a spin on glass material. This study is focus on intrinsic characteristics 、thermal stability 、damage after various kinds of plasma treatment. And because of its porosity, a large surface area cause make moisture uptake become sensibility, here also study the leakage mechanism of porous HOSP after moisture uptake. Process integration issues such as O2 plasma ashing and wet stripper for photoresistor removal will damage the film and lost the property of ultra low dielectric constant. We propose a post treatment to maintain the property of itself. Besides, for copper integration, metal cause diffuse into the film, here we use Bias-Temperature-Stress(BTS) to force copper diffuse into the film more rapidly to evaluate the degradation and leakage mechanism of porous film. After the BTS condition 150oC，1Mv/cm，1000 Sec, leakage current still kept at a very low magnitude even at a high electric field. Result in the porous HOSP has a good resistance to against copper diffusion.
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Chen, Shiu-Sheng. "Percolative BaTiO3/Ni Composites with Improved Dielectric Constant." 2008. http://www.cetd.com.tw/ec/thesisdetail.aspx?etdun=U0001-1706200813502100.
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Lai, Gung Shen, and 賴冠生. "Extraction of the High Frequency Effective Dielectric Constant." Thesis, 1997. http://ndltd.ncl.edu.tw/handle/12970037146413472940.
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Chen, Tsung-Wen, and 陳琮汶. "Characterization of spin-on Hydrogen Silsesquioxane (HSQ) for Low dielectric constant Intermetal Dielectric Applications." Thesis, 1997. http://ndltd.ncl.edu.tw/handle/41418237018331621276.
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碩士國立交通大學
電子工程學系
85
As the CMOS geometry shrinks to 0.35um and beyond, low dielectric constant properties become increasingly important in the selection of intermetal dielectric oxide. In this thesis, we introduce a low-k SOG material that is Hydrogen Silsesquioxane (HSQ) -based flowable oxide (FOx) and study its characteristics when used for low-k IMD applications. In the present study, film shrinkage has been reported. The FOx film thickness shrinkage is smaller than 5% that exhibits less reduction than the conventional SOGs (reduce to 10 %). Thermal properties of the FOx film have also been investigated. The FOx film has good crack resistance and will not crack till 700oC. The plasma treated films show smaller variations in film stress than as spun FOx film during the thermal heating and cooling cycle. Plasma curing effects and water absorption resistance of FOx have been realized. H2 plasma curing treatment causes the lowest dielectric constant of FOx. On the other hand, O2 plasma curing treatment makes the FOx film higher moisture absorption due to the formation of Si-OH bonds and NH3 plasma curing treatment makes lower moisture absorption. The formation of Si-OH bonds is caused by the O component in the air incorporating into the film structure. In addition, curing time and temperature effects are also stated. It is found that we should carefully select the optimal curing time and temperature to get Si-H rich film for conserving low dielectric constant properties of the FOx film. If the Si-H bonds retain ata high level and the cage-like/network ratio is not too small, the low dielectric constantproperty of the film will conserve. Mechanisms of the reduction in oxide's dielectric constant have been reported to explain the relationship between ionic polarization density and electronic polarization density with dielectric constant. Finally, basic electrical characteristics such as C-V and I-V measurements are measured for each plasma curing FOx film.
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Wang, Yong-Lin, and 王詠麟. "Microwave Measurements of Dielectric Properties for High Dielectric Constant Ceramic Materials by Mixture Equations." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/59y4j8.
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碩士國立虎尾科技大學
光電與材料科技研究所
98
This article reports on a study of the dielectric constants of ceramic dispersions in the polyethylene matrix at microwave frequency. The experimental dielectric constants of ceramic dispersions in the polyethylene matrix at microwave frequency are compared to those obtained by using different mixing laws. Ceramic powders are mixed in a certain proportion of matrix powder. Three high dielectric constant ceramic powders of TiO2, CaTiO3 and SrTiO3 with the dielectric constants of 100,170 and 300, respectively, are studied. The matrix material is the PE powder with dielectric constant 2.32. The experimental values of the dielectric constants of mixtures are compared to those obtained by using different mixing laws. The mixing rules are also adopted to estimate the dielectric constants of pure ceramics from the measured dielectric constants of composites with various concentrations. The most adequate mixture law for estimating the dielectric constants of pure ceramics will be suggested. This study conclude a very important concept on the powder mixture rule -- the most adequate mixture law for estimating the dielectric constants of pure ceramics requires both good curve fitting and potential of lower error. About the measurement method, according to electromagnetic theory, electromagnetic wave from a medium incidence to another dielectric with different dielectric constant, because of the dielectric coefficient change, will have the partial reflection and the partial penetration situation. For dielectric constant much larger than unit, the majority of electromagnetic wave will be limited in the dielectric to form the standing wave. The so-called dielectric resonators (DR) in formed and can be adopted for dielectric properties measurements. The measurement method of microwave dielectric properties in this research is called the post resonance technique. This measurement technology has very good accuracy on the dielectric constant measurement in dielectric resonator material.
49
Zhang, Sheng active 2013. "Passive inductively coupled wireless sensor for dielectric constant sensing." 2013. http://hdl.handle.net/2152/21728.
Full textAbstract:
In order to address the challenges of capacitive sensing in harsh environment, self resonant passive wireless sensors are studied. The capacitive sensing elements based on interdigitated capacitor (IDC) sensor are used. A semi-empirical model providing accurate capacitance calculation for IDCs over a wide range of dimensions and dielectric constants is developed. An equivalent circuit model based on electric field distribution is proposed, leading to a closed form approximation for IDC capacitance calculation. The conductivity of the material under test is also considered and a model is proposed to calculate effective capacitance as a function of conductivity and measurement frequency. The model is used to study the design optimization of IDC sensor and suggested design procedure is proposed. To wirelessly interrogate the capacitive sensor, it is connected to an inductive element to form a resonant circuit, while the measurement is made at remote reader coil. Advantages and disadvantages of different type of resonant structure design are analyzed. In order to assist the design process, a SPICE circuit model is developed to estimate the resonant frequency of the self resonant sensor. Miniaturized sensors with different dimensions are designed, fabricated and tested. The sensor is integrated with silicon nanowire fabric coated with polymer. Measurements are made to illustrate the enhancement in sensing capability by integrating chemical selective material.text
50
Tu, Yi-Chuan, and 凃ㄧ權. "Integration of Copper and Porous Low Dielectric Constant Materials." Thesis, 2002. http://ndltd.ncl.edu.tw/handle/99868972638712822673.
Full textAbstract:
碩士國立交通大學
機械工程系
90
As the devices become smaller and dimensions decline to sub-micron scale, the performance of integrated circuits will be significantly limited by the interconnect RC time delay. To alleviate these impacts, copper and low dielectric constant materials are used to replace aluminum and silicon oxide as the conduction and dielectric layers in metallization system. Since copper diffuses fast in silicon substrate, a diffusion barrier with good thermal stability, contact resistance, and low resistivity is needed in Cu/Si contact system. Reactively sputtered Ta-Si-N layer was chosen as diffusion barrier in this study. Barrier capability against Cu diffusion was evaluated by sheet resistance, x-ray diffraction (XRD), transmission electron microscopy, and leakage current of junction diode. The Ta-Si-N film deposited at a N2 flow ratio of 20% has a low resistivity of 250 mW-cm. The Cu/Ta-Si-N (10 nm)/Si system is thermally stable at higher than 650°C. The leakage current density of junction diode is lower than 10-6A/cm2 after annealing at 600°C for one hour. Due to its very low dielectric constant, high thermal stability, process compatibility, and controllable porosity, surfactant-templated mesoporous silica film is consider to be one of the most promising low-k dielectric materials. The porous silica film developed by NTU Chemical Engineering Process Laboratory was used as low-k dielectric layer. Low-power O2 plasma treatment or low-temperature vacuum curing was utilized to replace conventional high-temperature calcination to remove the template. O2 plasma removed the template successfully, however, dielectric constant of resulted silica film was higher. H2 plasma was used to modify the film to be hydrophobic. H2 plasma was not as effective as HMDS in surface modification. To integrate copper and low-k dielectric, thermal stressing effects on resistance and stress of barrier/SiO2/Si and Cu/barrier/SiO2/Si systems were also evaluated by XRD, AFM, and TEM. Mechanism of stress migration is proposed and discussed.