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Relevant bibliographies by topics / Dielectric CCD

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Academic literature on the topic 'Dielectric CCD'

Author: Grafiati

Published: 6 September 2023

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Journal articles on the topic "Dielectric CCD"

1

Deb, K. K., M. D. Hill, and J. F. Kelly. "Pyroelectric characteristics of modified barium titanate ceramics." Journal of Materials Research 7, no. 12 (December 1992): 3296–305. http://dx.doi.org/10.1557/jmr.1992.3296.

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BaZrO3 and BaHfO3 modified polycrystalline BaTiO3 are candidate materials for transverse mode and pyroelectric charge coupled device (CCD) arrays. Addition of 3–4% barium zirconate and barium hafnate to barium titanate alters the temperature of phase transformations and with it, dielectric and pyroelectric properties. These additions create a temperature range close to room temperature where the pyroelectric coefficient is extremely high relative to the dielectric permittivity. These materials show a very high figure of merit for dielectric bolometer applications that is competitive with existing materials, while being relatively easy to prepare.

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Tao, Chunxian, Jun Ruan, Dong Liang, Zhaoxia Han, Liang He, Ruijin Hong, Xiao Cui, and Dawei Zhang. "Enhancement of UV Excited Photoluminescence by Fabry-Perot Microcavity." Journal of Spectroscopy 2015 (2015): 1–6. http://dx.doi.org/10.1155/2015/153483.

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A light-emitting microcavity with the structure of dielectric mirror/phosphor coating/dielectric mirror for the enhancement of PL efficiency excited under UV light was designed and fabricated. The fluorescence emission of Lumogen S0795 coating within microcavity structure is significantly enhanced compared with the coating on bare substrate. The measurement results indicate the possibility of developing front illuminated CCD based on optical resonant cavity for UV-visible imaging with higher sensitivity.

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Čech, Jan, Miroslav Zemánek, Pavel Sťahel, Hana Dvořáková, and Mirko Černák. "INFLUENCE OF SUBSTRATE THICKNESS ON DIFFUSE COPLANAR SURFACE BARRIER DISCHARGE PROPERTIES." Acta Polytechnica 54, no. 6 (December 31, 2014): 383–88. http://dx.doi.org/10.14311/ap.2014.54.0383.

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In presented work the influence of dielectric barrier thickness on the parameters of Diffuse Coplanar Surface Barrier Discharge was investigated. The discharge was operated at atmospheric pressure laboratory air. The electrical parameters of the system were studied both experimentally and using numerical simulations. The discharge pattern was studied as well using intensified CCD camera.

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Okuyama, M., Y. Togami, Y. Hamakawa, M. Kimata, and M. Denda. "Room-temperature-operated infrared image CCD sensor using pyroelectric gate coupled by dielectric connector." IEEE Transactions on Electron Devices 38, no. 5 (May 1991): 1145–51. http://dx.doi.org/10.1109/16.78392.

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Taleb, Soumia Imane, Cristian Neipp, Jorge Francés, Andrés Márquez, Mariela L. Alvarez, Antonio Hernández, Sergi Gallego, and Augusto Beléndez. "Validation of Fresnel–Kirchhoff Integral Method for the Study of Volume Dielectric Bodies." Applied Sciences 11, no. 9 (April 22, 2021): 3800. http://dx.doi.org/10.3390/app11093800.

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In this work, we test a nondestructive optical method based on the Fresnel–Kirchhoff integral, which could be applied to different fields of engineering, such as detection of small cracks in structures, determination of dimensions for small components, analysis of composition of materials, etc. The basic idea is to apply the Fresnel–Kirchhoff integral method to the study of the properties of small-volume dielectric objects. In this work, we study the validity of this method. To do this, the results obtained by using this technique were compared to those obtained by rigorously solving the Helmholtz equation for a dielectric cylinder of circular cross-section. As an example of the precision of the method, the Fresnel–Kirchhoff integral method was applied to obtain the refractive index of a hair by fitting the theoretical curve to the experimental results of the diffraction pattern of the hair measured with a CCD camera. In a same manner, the method also was applied to obtain the dimensions of a crack artificially created in a piece of plastic.

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Sikora, Wojciech. "Experimental Investigation of a Uniaxial Dielectric Elastomer Generator." Acta Mechanica et Automatica 17, no. 4 (August 17, 2023): 499–506. http://dx.doi.org/10.2478/ama-2023-0058.

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Abstract The widespread use of battery-powered electronic devices creates the need to develop methods to extend their maximum operating time. This can be achieved by using ambient energy, which would otherwise be dissipated. The conversion of energy, usually mechanical energy, into electric energy takes place in energy harvesters. Energy harvester systems based on a dielectric elastomer (DE) are a relatively new field that is being constantly developed. Due to their features, dielectric elastomer generators (DEGs) may complement the currently dominant piezoelectric harvesters. The major feature of employing a hyperelastic material is that it allows relatively large displacements to be utilised for generating energy, which is impossible in the case of piezoceramics. This article presents a DEG designed to operate under uniaxial tensile loads and which has a multilayer structure, describes the general operating principles of a DEG, explains the construction and assembly process of the investigated design and shows the electric circuit necessary to properly direct current flow during the DEG operation. The experimental part consists of two series of tests based on a central composite design (CCD). The objective of the first part was to map a capacitance response surface of the DEG in the selected range of the cyclic mechanical load. The second part concerned the amount of generated energy for the specific load case as a function of operating voltages. The result of the work is the formulation of regression models that allow the characteristics of the presented DEG design to be identified.

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Veliadis, Victor, M. Snook, H. Hearne, B. Nechay, S. Woodruff, C. Lavoie, C. Kirby, Eugene A. Imhoff, J. White, and Stuart M. Davis. "Process Tolerant Single Photolithography/Implantation 120-Zone Junction Termination Extension." Materials Science Forum 740-742 (January 2013): 855–58. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.855.

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The multiple-zone junction termination extension (MJTE) is a widely used SiC edge termination technique that reduces sensitivity to implantation dose variations. It is typically implemented in multiple lithography and implantation events. To reduce process complexity, cycle time, and cost, a single photolithography/implantation (P/I) MJTE technique was developed and diodes with 3-zone and 120-zone JTEs were fabricated on the same wafer. Here, the process tolerance of the single (P/I) MJTE technique is evaluated by performing CCD monitored blocking voltage measurements on diodes from the same wafer with the 3-zone and 120-zone single (P/I) JTE. The 3-zone JTE diodes exhibited catastrophic localized avalanches at the interface between the 2nd and 3rd zones due to abrupt zone transitions. Diodes with the smooth transitioning 120-zone JTE exhibited no CCD detectable avalanches in their JTE regions up to the testing limit of 12 kV. Under thick dielectric (deposited for on-wafer diode interconnection), diodes with the single P/I 3-zone JTE failed due to significant loss of high-voltage capability, while their 120-zone JTE diode counterparts were minimally affected. Overall, the single (P/I) 120-zone JTE provides a process-tolerant and robust single P/I edge termination at no additional fabrication labor.

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Domenicucci, A. "Image Processing Methodology for Determining SI Precipitate Size and Density in Oxide Layers from Conical Dark Field TEM Micrographs." Microscopy and Microanalysis 7, S2 (August 2001): 832–33. http://dx.doi.org/10.1017/s1431927600030233.

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Image processing techniques have been used for decades in many branches of science. with the advent of low cost, highresolution CCD cameras and the advances in personal computing, techniques previously used in other disciplines are increasingly being applied by transmission electron microscopists. The present paper gives an example of using image processing techniques for characterizing the number and size of second phase precipitates in an oxide matrix.Si inclusions in the form of Si precipitates can occur in silicon dioxide films. The inclusions are contained within the films and effectively reduce the local thickness of the oxide. This thinning results in a reduction in the voltage necessary to cause oxide breakdown; the larger is the precipitate, the lower the breakdown voltage. Knowledge of the precipitate size and density is therefore important when assessing the dielectric integrity of these films. The Si precipitates are crystalline and more or less randomly oriented within the matrix.

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Munro, Calum, Vasil Pajcini, and Sanford A. Asher. "Uv Raman Microscopy: Spectral and Spatial Selectivity and Even High Sensitivity." Microscopy and Microanalysis 3, S2 (August 1997): 835–36. http://dx.doi.org/10.1017/s1431927600011065.

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We have constructed a new UV Raman microspectrometer designed around an Olympus microscope, a single spectrograph and an intensified CCD detector (Fig. 1). We utilize CW excitation from either an intracavity frequency doubled Ar+ laser (257, 244, 229 nm) or a Kr+ laser (206 nm). We optimized the throughput by utilizing specially prepared dielectric coated Rayleigh rejection filters.In one application we used this instrument to speciate and determine the spatial distribution of non diamond carbon species in CVD diamond samples (Fig. 2). We find that these non diamond carbon species are localized in the interstitial areas between diamond crystals.In another application we demonstrated the utility of UV Raman microspectroscopy for the rapid, incisive and non-destructive characterization of meteorites and interplanetary dust particles (IDP). In addition to probing the structure and distribution of predominant mineral matrices of these materials, UV excitation enables us to the characterize the small but significant carbonaceous components included within these samples.

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Kędzierski, Jacek, Jürgen Engemann, Markus Teschke, and Dariusz Korzec. "Atmospheric Pressure Plasma Jets for 2D and 3D Materials Processing." Solid State Phenomena 107 (October 2005): 119–24. http://dx.doi.org/10.4028/www.scientific.net/ssp.107.119.

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A novel atmospheric pressure plasma jet with a cylindrical symmetry i.e. a tubular dielectric barrier and two tubular electrodes was developed at Microstructure Research Center – fmt, Wuppertal, Germany. The jet was investigated by means of ultra fast (down to tens of nanoseconds exposition time) ICCD photography and regular CCD photography. Some spectacular results were achieved and their partial explanation was presented. The jet acts as a “plasma gun” throwing small “plasma bullets” out of its orifice. The most important findings are: (i) the bullet velocity is approximately 3 orders of magnitude larger than the gas flow velocity, and (ii) the jet dynamics is mainly electrical field controlled. A simple model - formation of a jet in air - based on a Helium metastables core can explain qualitatively reasonably well most of our experimental observations. Some variations of the original cylindrical jet geometry were presented and discussed: microjet and fmt Plasma-Pen, single tube multijet, tube-in-tube single and multijet systems (so-called “Wuppertal-Approach”).

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Dissertations / Theses on the topic "Dielectric CCD"

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Seawright, Stephen William James. "CAD of microwave dielectric resonator stabilized sources." Thesis, Queen's University Belfast, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.334642.

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Mukherjee, Valmiki. "A Dual Dielectric Approach for Performance Aware Reduction of Gate Leakage in Combinational Circuits." Thesis, University of North Texas, 2006. https://digital.library.unt.edu/ark:/67531/metadc5255/.

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Design of systems in the low-end nanometer domain has introduced new dimensions in power consumption and dissipation in CMOS devices. With continued and aggressive scaling, using low thickness SiO2 for the transistor gates, gate leakage due to gate oxide direct tunneling current has emerged as the major component of leakage in the CMOS circuits. Therefore, providing a solution to the issue of gate oxide leakage has become one of the key concerns in achieving low power and high performance CMOS VLSI circuits. In this thesis, a new approach is proposed involving dual dielectric of dual thicknesses (DKDT) for the reducing both ON and OFF state gate leakage. It is claimed that the simultaneous utilization of SiON and SiO2 each with multiple thicknesses is a better approach for gate leakage reduction than the conventional usage of a single gate dielectric (SiO2), possibly with multiple thicknesses. An algorithm is developed for DKDT assignment that minimizes the overall leakage for a circuit without compromising with the performance. Extensive experiments were carried out on ISCAS'85 benchmarks using 45nm technology which showed that the proposed approach can reduce the leakage, as much as 98% (in an average 89.5%), without degrading the performance.

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Books on the topic "Dielectric CCD"

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S. R. J. Brueck (Editor), Jeffrey C. Gelpey (Editor), A. Kermani (Editor), J. L. Regolini (Editor), and J. C. Sturm (Editor), eds. Rapid Thermal and Integrated Processing IV: Symposium Held April 17-20, 1995, San Francisco, California, U.S.A (Symposium Proceedings Series; Vol. 387). Materials Research Society, 1995.

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Wortman, Jimmie J. Rapid Thermal and Integrated Processing III: Symposium Held April 4-7, 1994, San Francisco, California, U.S.A (Materials Research Society Symposium,). Materials Research Society, 1994.

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3

VLSI and Post-CMOS Electronics: Design, Modelling and Simulation. Institution of Engineering & Technology, 2019.

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Dhiman, Rohit, and Rajeevan Chandel. VLSI and Post-CMOS Electronics: Devices, Circuits and Interconnects, Volume 2. Institution of Engineering & Technology, 2019.

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VLSI and Post-CMOS Electronics: Devices, Circuits and Interconnects. Institution of Engineering & Technology, 2019.

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Dhiman, Rohit, and Rajeevan Chandel. VLSI and Post-CMOS Electronics: Design, Modelling and Simulation, Volume 1. Institution of Engineering & Technology, 2019.

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Conference papers on the topic "Dielectric CCD"

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Allegraud, K., S. Celestin, O. Guaitella, and A. Rousseau. "CCD imaging of dielectric barrier discharges in air: Plasma self organization." In 2008 IEEE 35th International Conference on Plasma Science (ICOPS). IEEE, 2008. http://dx.doi.org/10.1109/plasma.2008.4590895.

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Dong, Lifang, Shuai Wang, Han Yue, Hong Xiao, Yujie Yang, and Weili Fan. "Study of the square grid pattern in dielectric barrier discharge by a CCD digital camera." In International Symposium on Photoelectronic Detection and Imaging 2009, edited by Kun Zhang, Xiang-jun Wang, Guang-jun Zhang, and Ke-cong Ai. SPIE, 2009. http://dx.doi.org/10.1117/12.834942.

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Title, Alan, Ted Tarbell, and Bill Rosenberg. "The Michelson Doppler Imager for SoHO." In Space Optics for Astrophysics and Earth and Planetary Remote Sensing. Washington, D.C.: Optica Publishing Group, 1991. http://dx.doi.org/10.1364/soa.1991.tue5.

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The Michelson Doppler Imager is an instrument for doing helioseismology from Lagrangian point between the Earth and Sun. It is a full sun imager that includes 12 cm refractor, a high speed image stabilization system, a narrowband filter system (Ni 6768 angstroms), and a 1024 × 1024 CCD detector. One hundred milliangstrom spectral analysis is provided by a combination of dielectric filters, a fixed Lyot filter, and a pair of tunable solid Michelson interferometers.

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Lin, Shih-Chun, and John Hong. "Anomalous diffraction of a grazing laser beam by a dielectric interface: experimental observation." In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1988. http://dx.doi.org/10.1364/oam.1988.wi5.

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In 1977, Kolomeev et al.1 reported observation of anomalous diffusion of a laser beam when incident at a grazing angle to one surface from the 90° vertex and perpendicular to the other surface of a glass right-angle prism. They also provided a theory for the phenomenon. The diffracted light showed a distinct oscillatory distribution, followed the critical angle of total internal reflection with good directivity, and was due to the interface only. Recently we reexamined the phenomenon and thought that the diffraction effect could serve as the basis for designing optical switches, especially in conjunction with nonlaser optical interfaces. Using a CCD linear detector array, we measured the intensity patterns of the transmitted and the diffracted beams of the following light sources: (a) a single-line He–Ne laser; (a) a dual-line Ar+laser; and (c) a broadband xenon-arc lamp, at both glass–air and water–air interfaces. The optical beams, both inside and outside the prism, were visualized. The fact that the diffraction is due to the interface alone was firmly established by perturbing the interface with films of alcohol, contacting dielectric wedges and metal surfaces, and oscillating wires. All these new results are presented. Comparison to the theory is given, and application of this effect to optical switching is described.

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Han, L. H., and T. J. Lu. "Mechanical Properties Measurement of Electroactive Polymers." In ASME 7th Biennial Conference on Engineering Systems Design and Analysis. ASMEDC, 2004. http://dx.doi.org/10.1115/esda2004-58115.

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Electroactive polymers (EAPs), such as piezoelectric polymer, polyelectrolyte gels, dielectric elastomer and conducting polymer etc., are emerging as a new type of actuation materials for a broad range of actuator and transducer applications, because of their higher strain, higher response and higher efficiency. Acrylic elastomer films have demonstrated higher specific energy density (0.4J/g) and more than 100% actuated strains, and have been recommended for the artificial muscle actuators. Much research has been carried out to investigate the actuation properties of EAP films, however, little information is available for the mechanical properties of EAP films, which are crucial for designing EAP actuators. This work focuses on developing a means of characterizing the mechanical properties of EAP thin film materials, describing the mechanical behavior with the suitable constitutive models and determining the material parameters for the development of actuators. To measure the mechanical properties of EAP films, a uniaxial testing system is developed, which consists of a small-scale force transducer, a CCD camera, a National Instruments card and a laser displacement transducer. The loading and unloading cycles on film specimens are controlled by an Instron Machine. The applied force and the total are stored in the computer by the National Instrument card. A sequence of 2D images are recorded by the CCD camera to capture the deformation process of the film sample. Then, the displacements of the marks on the film surface vertical to the thickness plane are calculated from the sequential images by image analysis techniques. There are several well-known models available to describe the mechanical behaviors of the EAP films, such as Neo-Hookean, Mooney-Rivlin and Ogden models etc. To determine the most suitable constitutive models and corresponding material constants, a generalized method based on finite element analysis is proposed and implemented by interfacing with ABAQUS finite element package. The kernel of the method is to minimize the difference between the measured displacement field and the computed displacement field. A global optimisation algorithm, simulated annealing (SA), is used to minimize the objective. The experimental investigation on the mechanical properties of the dielectric elastomer film (VHB4910) is presented as an example to demonstrate the functions of the testing system and the developed method. The developed testing system and method can also be used for characterizing the mechanical properties of other EAP film materials.

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Sen, Mehmet, Gregory Kowalski, Jason Fiering, and Dale Larson. "Effects of the Light Source on the Signal Quality for Photonic and Microfluidic Nanohole Sensor Calorimeter." In ASME 2012 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2012. http://dx.doi.org/10.1115/imece2012-88300.

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Our research focuses on the development of a calorimeter device utilizing a photonic temperature sensor based on the extraordinary optical tranmission (EOT) signals through nanohole array (NHA) sensors on metallic films in combination with a continuous coflow reactor clamped to the sensor chip. The fluid was in direct contact with the gold. The incident light traversed the layers of the flowcell assembly to illuminate the sensors, and was measured using a CCD camera. Here, the effect of the light source and the flowcell material and design on the signal quality is reported. Using an incoherent light source and eliminating elastic deformation from the illumination path resulted in an interference-free, fringe-free optical configuration. Using the improved apparatus, EOT signal temperature dependence for different liquids (DI water and ethanol) was presented. EOT signal gain due to a temperature change was 3.810 times higher in the ethanol than the DI water signal gain. This behavior was explained by the difference in the volumetric expansion coefficient, which is a factor in the change of dielectric constant due to temperature changes. This trend was in agreement with the analytical relations and supports the use of EOT as a measurement signal in a miniaturized calorimeter.

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Alavi, S., M. Passandideh-Fard, and M. H. Tafteh. "Electrowetting Actuation for a Sessile Liquid Drop: Experiments and Simulations." In ASME 2011 9th International Conference on Nanochannels, Microchannels, and Minichannels. ASMEDC, 2011. http://dx.doi.org/10.1115/icnmm2011-58197.

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In this paper, experiments and numerical simulations are performed to study the effects of electric field on the contact angle of a sessile liquid drop resting on a substrate in electrowetting-on-dielectric (EWOD) application. In the experiments for studying the electrowetting, a mercury droplet of 20μL was dispensed manually on a soldermask-coated PCB (Printed Circuit Board) and different values of AC voltage were applied between the droplet and the insulator. High quality images were captured using a CCD camera in all experiments and a program was developed using the MATLAB software for image-processing purposes to obtain the contact angle and other geometrical parameters of the droplet. A numerical model was also used to simulate the drop deformation under an electric field. The continuity and momentum equations along with an equation for tracking the liquid free surface were solved. The free surface advection and reconstruction were performed based on the volume-of-fluid method using Youngs’ algorithm. To evaluate the effect of the electric field on the free surface, the electrostatic potential was first solved for the entire computational domain. Next, the electric field intensity and the surface density of the electric charge were calculated on the free surface after which the electric force could be determined. Calculated droplet shapes agreed well with those of the experiments.

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Tambat, Abhishek, Hung-Yun Lin, Ian Claydon, Ganesh Subbarayan, Dae-Young Jung, and Bahgat Sammakia. "Modeling Fracture in Dielectric Stacks due to Chip-Package Interaction: Impact of Dielectric Material Selection." In ASME 2011 Pacific Rim Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Systems. ASMEDC, 2011. http://dx.doi.org/10.1115/ipack2011-52237.

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The trend towards decreasing dielectric constant of Interlayer Dielectric (ILD) materials has required significant trade-off between electrical performance and mechanical integrity of the die stack. Fracture caused by thermal stresses due to large coefficient of thermal expansion (CTE) mismatch between these materials arising during fabrication or testing are often the main driving force for failure. In this paper, we use CAD-inspired hierarchical field compositions [1] to carry out Isogeometric (meshfree) fracture simulations. We model cracks as arbitrary curves/surfaces and the crack propagation criterion is based on the evolving energy release rate (ERR) of the system. We simulate the solder reflow process to assess the impact of chip-package interaction on the reliability of ILD stacks. We use multi-level modeling to extract displacement boundary conditions for the local model of the ILD stack. Eight layers of metallization are considered in the ILD stack. We study the relative risks of replacing stronger dielectric (SiO2) with weaker dielectrics (SiCOH, ULK) on the criticality of preexisting flaws in the structure. Further, we study the impact of varying interfacial toughness values on the crack growth patterns in ILD stacks. Crack patterns reflect the propensity towards predominantly bulk failure with increasing interfacial toughness.

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Zheng, Xiaoming, Limei Rong, Tao Xie, Yong Zhou, Xiaowen Zhang, Zuwen Wang, and Jiangfeng Du. "Thermal stress and deformation depend on thickness of CCD composite dielectrics." In 2012 International Conference on Quality, Reliability, Risk, Maintenance, and Safety Engineering (QR2MSE). IEEE, 2012. http://dx.doi.org/10.1109/icqr2mse.2012.6246380.

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Xie, Tao, Limei Rong, Xiaoming Zheng, Zuwen Wang, Jiangfeng Du, and Xiaowen Zhang. "Study on simulation method of thermal stress and deformation in CCD composite dielectrics." In 2012 International Conference on Quality, Reliability, Risk, Maintenance, and Safety Engineering (QR2MSE). IEEE, 2012. http://dx.doi.org/10.1109/icqr2mse.2012.6246388.

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