Journal articles on the topic 'Device on the microstrip lines'

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1

Ding, Daye, Ruozhou Li, Jing Yan, Jiang Liu, Yuming Fang, and Ying Yu. "Influence of Microcracks on Silver/Polydimethylsiloxane-Based Flexible Microstrip Transmission Lines." Applied Sciences 11, no. 1 (December 22, 2020): 5. http://dx.doi.org/10.3390/app11010005.

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Microcrack is commonly seen as a defect in materials that affects the performance of flexible radio frequency (RF) devices. Here, we investigate the influence of microcracks on the RF characteristics of flexible microstrip by stretching flexible microstrip that is based on polydimethylsiloxane (PDMS) substrate and an Ag microparticles/PDMS (AgMP/PDMS) composite conductor. The RF characteristics of the microstrip were monitored with a variety of tensile displacements. An equivalent circuit model of the microstrip with microcracks was proposed to reveal the mechanisms. The fitting results matched the actual measurement well. In addition, the morphology of the microcracks was characterized by SEM and the direct-current (DC) resistance was monitored. The results show that the changes in equivalent circuit element parameters (R, L, C) are due to the change in the conductive pathways, which affect the transmission and reflection of the RF signals.
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2

de Novais Schianti, Juliana, Ariana L.C. Serrano, Daniel Orquiza de Carvalho, Rafael A. Penchel, Julio Mota Pinheiro, Mario R. Gongora-Rubio, and Gustavo Pamplona Rehder. "Novel Platform for Droplet Detection and Size Measurement Using Microstrip Transmission Lines." Sensors 19, no. 23 (November 28, 2019): 5216. http://dx.doi.org/10.3390/s19235216.

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We propose a novel platform for detecting as well as measuring the size of individual droplets in microfluidic channels using microstrip transmission lines. The most outstanding feature of our platform is that, as opposed to previous related works, its design allows for the droplet to flow in a microfluidic channel fabricated between the top strip and the ground plane of a microstrip transmission line. This provides enhanced interaction of the electromagnetic field with the detected droplets. The proposed design allows us to measure droplet size directly from the phase of the microwave signal, without the need for a resonator. The platform is based on low temperature co-fired ceramic (LTCC), which makes it more compatible with Radiofrequency (RF) and microwave technology than platforms used in previous works. With this platform, we are able to measure droplets as small as 150 µm in radius. It is worth pointing out that our device could also be used for detection, counting and measurement of other microscopic objects.
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3

Sun, Hai. "Calculation of Transmission Characteristics of Shielded Microstrip Lines Filled with Anisotropic Left-Handed and Right-Handed Materials." Journal of Nanoelectronics and Optoelectronics 16, no. 10 (October 1, 2021): 1610–17. http://dx.doi.org/10.1166/jno.2021.3122.

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In this paper, the edge-based finite element formula for calculating the transmission characteristics of shielded microstrip lines filled with anisotropic materials with magnetic field as working variable is derived in detail. The filling materials include anisotropic left-handed materials and anisotropic right-handed materials, and the transmission characteristics include dominant mode cutoff wavelength and electric field structure. We mainly take Rectangular-shaped, V-shaped and Trapezoidal-shaped shielded microstrip lines as examples to calculate the transmission characteristics. The formulas and calculation examples derived in this paper have strong guiding significance for the application of anisotropic left-handed and right-handed materials in inhomogeneous transmission lines, which will further expand the use of shielded microstrip lines in optical devices such as electro-optic waveguide modulators.
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Ribate, Mohamed, Rachid Mandry, Jamal Zbitou, Larbi El Abdellaoui, Ahmed Errkik, Mohamed Latrach, and Ahmed Lakhssassi. "Design of L-S band broadband power amplifier using microstip lines." International Journal of Electrical and Computer Engineering (IJECE) 10, no. 5 (October 1, 2020): 5400. http://dx.doi.org/10.11591/ijece.v10i5.pp5400-5408.

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This contribution introduces a novel broadband power amplifier design, operating in the frequency band ranging from 1.5 GHz to 3 GHz which cover the mainstream applications running in L and S bands. Both matching and biasing networks are synthesized by using microstrip transmission lines. In order to provide a wide bandwidth, two broadband matching techniques are deployed for this purpose, the first technique is an approximate transformation of a previously designed lumped elements matching networks into microstrip matching circuits, and the second technique is a binomial multi-sections quarter wave impedance transformer. The proposed work is based on ATF-13786 active device. The simulation results depict a maximum power gain of 16.40 dB with an excellent input and output matching across 1.5 GHz ~ 3 GHz. At 2.2 GHz, the introduced BPA achieves a saturated output power of 16.26 dBm with a PAE of 21.74%, and a 1-dB compression point of 4.5 dBm input power level. The whole circuitry is unconditionally stable over the overall bandwidth. By considering the broadband matching, the proposed design compares positively with the most recently published BPA.
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5

Zapata-Londoño, J., F. Umaña-Idárraga, J. Morales-Guerra, S. Arias-Gómez, C. Valencia-Balvin, and E. Reyes-Vera. "Differential microwave sensor based on microstrip lines loaded with a split-ring resonator for dielectric characterization of materials." Journal of Physics: Conference Series 2118, no. 1 (November 1, 2021): 012004. http://dx.doi.org/10.1088/1742-6596/2118/1/012004.

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Abstract In this work, we propose a microwave sensor that allows the characterization of dielectric materials based on a differential configuration. A microstrip permittivity sensor of the surrounding material is proposed using a split ring-resonator to measure differentially. The geometry was optimized and was numerically analyzed using CST STUDIO. The numerical analysis of the metamaterial unit cells is carried out first, to determine the operating band. After that, the metamaterial cell was employed to design the differential microstrip permittivity sensor. The obtained results reveal that the proposed sensor has the capability to characterize different materials whose relative dielectric permittivity’s are in the range of 9.8 to 80 with great performance. The device has a total size of 86 mm × 60 mm and operates around 3 GHz. In this band, the sensor reaches a sensibility of 2.89 MHz and a Q-factor of 70.15. Thus, this work shows a compact, reusable, label-free, and non-destructive microwave sensing device and paves the way for high accuracy sensing of the dielectric properties of different materials due to its high- Q-factor as well as high sensitivity.
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6

Князев, Н. С., А. И. Малкин, and В. А. Чечеткин. "Методика измерения потерь в направляемых линиях передачи в миллиметровом диапазоне частот." Письма в журнал технической физики 48, no. 5 (2022): 36. http://dx.doi.org/10.21883/pjtf.2022.05.52155.18981.

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An experimental method was developed to determine losses in microstrip and coplanar transmission lines for devices operating in the frequency range 77 - 81 GHz. The parameters of the scattering matrices are obtained using a vector network analyzer and frequency upconverters. The calculation of losses in waveguide-coplanar and coplanar-microstrip junctions is made.
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7

Sun, Xia Li, Qing Zhang, and Shu Yan. "Design of an Active Phase Conjugation Circuit for Retrodirective Array in UHF Band." Applied Mechanics and Materials 43 (December 2010): 201–6. http://dx.doi.org/10.4028/www.scientific.net/amm.43.201.

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An active phase conjugation circuit of retrodirective array which can be used in UHF band (890-960MHz) has been designed. Circuit of the retrodirective array consists of filters, mixers, dividers and other microwave devices. In this paper, microstrip filters and mixers are primarily designed. Divided matching circuit will be designed appropriate on the basis of the antenna element. Filters consist of microstrip coupled lines to conform with microstrip antenna arrays; to suppress the effect of RF input signals to output transmitted signals, selecting the image-rejection mixers. Simulation results of ADS show that all of the designed active devices display good performances.
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8

Savenkov, G. G., V. P. Razinkin, and V. A. Khrustalev. "WIDEBAND UHF LOADS BASED ON STEPPED-HETEROGENEOUS LINES WITH LOSSES." Issues of radio electronics, no. 4 (April 20, 2018): 68–72. http://dx.doi.org/10.21778/2218-5453-2018-4-68-72.

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The relevance of wideband load devices application in the modern UHF equipment is described in this paper. The basic structure and principle of operation of microstrip load are described. Design methods of high power wideband UHF loads in a series connection of line segments with increasing value of dissipative losses are considered in this paper. The stepped-heterogeneous loads frequency properties analysis based on one-dimensional transmission lines theory and numeric electrodynamic modelling is carried out. It was shown, that considered loads based on large length transmit lines with dissipative losses have good matching quality on high frequencies, which worsen with frequency reduction. Frequency characteristics, calculated via numeric electrodynamic modelling method of one-step and two-step centimeter wavelength microstrip loads are represented. A convergence of modelling and theoretic characteristics is shown.
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9

Li, Ruozhou, Jing Yan, Yuming Fang, Xingye Fan, Linkun Sheng, Daye Ding, Xiaoxing Yin, and Ying Yu. "Laser-Scribed Lossy Microstrip Lines for Radio Frequency Applications." Applied Sciences 9, no. 3 (January 26, 2019): 415. http://dx.doi.org/10.3390/app9030415.

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Laser-direct writing has become an alternative method to fabricate flexible electronics, whereas the resistive nature of laser-scribed conductors may distort the radio-frequency characteristics of circuits for high-frequency applications. We demonstrate that the transmission characteristics of microstrip lines are insensitive to the resistance of laser-scripted conductors when the sheet resistance is not above 0.32 Ω/□. On the other hand, the transmission and reflection characteristics of the MS lines can be simply modified through the accommodation of the resistance of the conductors, because a laser can trigger the sintering and melting of laser produced silver nanostructures. This could provide an alternative way to fabricate radio frequency (RF) resistors and promote their applications to flexible radio-frequency devices and systems.
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10

UEDA, TETSUZO, YASUHIRO UEMOTO, TSUYOSHI TANAKA, and DAISUKE UEDA. "GaN TRANSISTORS FOR POWER SWITCHING AND MILLIMETER-WAVE APPLICATIONS." International Journal of High Speed Electronics and Systems 19, no. 01 (March 2009): 145–52. http://dx.doi.org/10.1142/s0129156409006199.

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We review our state-of-the-art GaN -based device technologies for power switching at low frequencies and for future millimeter-wave communication systems. These two applications are emerging in addition to the power amplifiers at microwave frequencies which have been already commercialized for cellular base stations. Technical issues of the power switching GaN device include lowering the fabrication cost, normally-off operation and further increase of the breakdown voltages extracting full potential of GaN -based materials. We establish flat and crack-free epitaxial growth of GaN on Si which can reduce the chip cost. Our novel device structure called Gate Injection Transistor (GIT) achieves normally-off operation with high enough drain current utilizing conductivity modulation. Here we also present the world highest breakdown voltage of 10400V in AlGaN / GaN HFETs. In this paper, we also present high frequency GaN -based devices for millimeter-wave applications. Short-gate MIS-HFETs using in-situ SiN as gate insulators achieve high fmax up to 203GHz. Successful integration of low-loss microstrip lines with via-holes onto sapphire enables compact 3-stage K -band amplifier MMIC of which the small-signal gain is as high as 22dB at 26GHz. The presented devices are promising for the two future emerging applications demonstrating high enough potential of GaN -based transistors.
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11

Kuzmin, S., K. Korovin, and A. Andropov. "Design Technique for Shielded Multilayer Directional Coupler." Proceedings of Telecommunication Universities 7, no. 1 (March 31, 2021): 63–70. http://dx.doi.org/10.31854/1813-324x-2021-7-1-63-70.

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The article discusses the implementation of directional couplers in a microstrip line, designed for communication lines in the frequency range of 2‒3 GHz, on a substrate made of a widely used and generally available material RO4350, with a coupling factor of 3‒7 dB. These directional couplers have been designed with additional boundary conditions to reduce the size of the device. In the course of numerical modeling, the correction factors used for preliminary analytical calculations were refined. The data of the numerical experiment were verified using the measurements prototype model.
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12

Ohshima, S., M. Endo, K. Takeda, K. Nakagawa, T. Honma, S. Sato, S. Takahashi, Y. Tanaka, and A. Saito. "Improved Power Handling Capability of Superconducting Microstrip Lines for Microwave Devices." Physics Procedia 36 (2012): 429–34. http://dx.doi.org/10.1016/j.phpro.2012.06.258.

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13

Vélez, Muñoz-Enano, Gil, Mata-Contreras, and Martín. "Differential Microfluidic Sensors Based on Dumbbell-Shaped Defect Ground Structures in Microstrip Technology: Analysis, Optimization, and Applications." Sensors 19, no. 14 (July 19, 2019): 3189. http://dx.doi.org/10.3390/s19143189.

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A microstrip defect ground structure (DGS) based on a pair of dumbbell-shaped slots is used for sensing. The device is a differential sensor consisting of a pair of mirrored lines loaded with a dumbbell-shaped DGS, and the output variable is the cross-mode transmission coefficient. Such a variable is very sensitive to asymmetries in the line pair, e.g., caused by an asymmetric dielectric load in the dumbbell-shaped DGSs. Therefore, the sensor is of special interest for the dielectric characterization of solids and liquids, or for the measurement of variables related to complex permittivity changes. It is shown in this work that by adding fluidic channels on top of the dumbbell-shaped DGSs, the device is useful for liquid characterization, particularly for the measurement of solute concentration in very diluted solutions. A sensitivity analysis useful for sensor design is carried out in this paper.
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14

Luong, Duy Manh, and Huy Hoang Nguyen. "Design of a High-Efficiency GaN High-Electron Mobility Transistor Microwave Power Amplifier." Journal of Science and Technology - Technical Universities 30.8, no. 147 (November 2020): 46–50. http://dx.doi.org/10.51316/30.8.8.

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This study presents a design procedure to obtain high-efficiency for microwave power amplifier. The designed amplifier uses a GaN high electron mobility transistor as an active device. Matching networks including input and output networks are realized using Megtron6 substrate microstrip lines. The designed amplifier operates at 2.1 GHz band. The simulated results show that the amplifier delivers a maximum power-added efficiency of 73.2% at output power and power gain of 47.8 dBm and 13.8 dB, respectively. This promising designed performance makes this amplifier to be an excellent candidate for use in modern wireless communication systems like radar, mobile network, and satellite communications.
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15

Ribate, Mohamed, Rachid Mandry, Jamal Zbitou, Larbi El Abdellaoui, Ahmed Errkik, Mohamed Latrach, and Ahmed Lakhssassi. "A trade-off design of microstrip broadband power amplifier for UHF applications." International Journal of Electrical and Computer Engineering (IJECE) 10, no. 1 (February 1, 2020): 919. http://dx.doi.org/10.11591/ijece.v10i1.pp919-927.

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In this paper, the design of a Broadband Power Amplifier for UHF applications is presented. The proposed BPA is based on ATF13876 Agilent active device. The biasing and matching networks both are implemented by using microstrip transmission lines. The input and output matching circuits are designed by combining two broadband matching techniques: a binomial multi-section quarter wave impedance transformer and an approximate transformation of previously designed lumped elements. The proposed BPA shows excellent performances in terms of impedance matching, power gain and unconditionally stability over the operating bandwidth ranging from 1.2 GHz to 3.3 GHz. At 2.2 GHz, the large signal simulation shows a saturated output power of 18.875 dBm with an output 1-dB compression point of 6.5 dBm of input level and a maximum PAE of 36.26%.
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16

Mozharovskiy, Andrei V., Aleksey A. Artemenko, Roman O. Maslennikov, and Irina B. Vendik. "Design of Wideband Waveguide-to-Microstrip Transition for 60 GHz Frequency Band." Journal of the Russian Universities. Radioelectronics 22, no. 4 (October 1, 2019): 31–44. http://dx.doi.org/10.32603/1993-8985-2019-22-4-31-44.

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Introduction. The frequency band around 60 GHz is one of the most promising to realize new generation communication systems with high data rate due to the utilization of a wide operational frequency band that significantly exceeds traditional frequency bands below 6 GHz. High interest in the development of 60 GHz communication systems is related to the recent evolution of MMIC technology that allows creating effective components for this band and the variety of planar devices. Both are typically realized on printed circuit boards and have interfaces that are based on microstrip lines. The wideband waveguide-to-microstrip transition is required to test various active and passive planar devices with microstrip interfaces in order to provide an effective interconnection between the standard waveguide interface of measurement equipment and planar microstrip structures.Objective. The paper deals with the design of planar wideband waveguide-to-microstrip transition with low insertion loss level in the 60 GHz frequency band.Materials and methods. The main objective is achieved by analyzing of discontinuities in waveguide-tomicrostrip transition structure and their influence on transition characteristics. The transition characteristics are analyzed using full-wave electromagnetic simulation and confirmed with experimental investigation of designed wideband waveguide-to-microstrip transition samples.Results. The designed transition is based on an electromagnetic coupling through a slot aperture in a microstrip line ground plane. The transition is performed without using blind vias in its structure that provides low production cost and al-lows integrating the WR-15 rectangular waveguide in a simple manner without any modifications in the waveguide structure. Results of the electromagnetic simulation are confirmed with experimental investigations of the fabricated waveguide-to-microstrip transition samples. The designed transition provides operation in the nominal bandwidth of the WR-15 waveguide, namely, 50…75 GHz with the insertion loss level of 2 dB and with less than 0.8 dB insertion loss level at the 60 GHz frequency.Conclusion. The designed waveguide-to-microstrip transition can be considered as an effective solution for interconnection between various waveguide and microstrip millimeter-wave devices due to its wideband performance, low insertion loss level, simple integration and robustness to the manufacturing tolerances structure.
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17

Guo, Guo, Zhenlin Yan, Zhenzhen Sun, Jianwei Liu, Ruichao Yang, Yubin Gong, and Yanyu Wei. "Broadband and Integratable 2 × 2 TWT Amplifier Unit for Millimeter Wave Phased Array Radar." Electronics 10, no. 22 (November 16, 2021): 2808. http://dx.doi.org/10.3390/electronics10222808.

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A novel power amplifier unit for a phased array radar with 2 × 2 output ports for a vacuum electron device is proposed. Double parallel connecting microstrip meander-lines are employed as the slow-wave circuits of a large power traveling wave tube operate in a Ka-band. The high frequency characteristics, the transmission characteristics, and the beam–wave interaction processes for this amplifier are simulated and optimized. For each output port of one channel, the simulation results reveal that the output power, saturated gain, and 3-dB bandwidth can reach 566 W, 27.5 dB, and 7 GHz, respectively. Additionally, the amplified signals of four output ports have favorable phase congruency. After fabrication and assembly, transmission tests for the 80-period model are performed preliminarily. The tested “cold” S-parameters match well with the simulated values. This type of integratable amplifier combined with a vacuum device has broad application prospects in the field of high power and broad bandwidth on a millimeter wave phased array radar.
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18

Xu, He-Xiu, Guang-Ming Wang, and Chen-Xin Zhang. "Fractal-Shaped Metamaterials and Applications to Enhanced-Performance Devices Exhibiting High Selectivity." International Journal of Antennas and Propagation 2012 (2012): 1–14. http://dx.doi.org/10.1155/2012/515167.

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Novel single negative metamaterial (MTM) transmission lines (TLs) are presented and studied in microstrip technology. They consist of a host TL in the conductor strip and a fractal-shaped complementary ring resonator (CRR) etched in the ground plane. Two types of fractal-shaped CRR are involved including the Moore and Hilbert. It is found that fractal perturbation in CRR results in lower and more transmission zeros in comparison with conventional CRR using nonfractal geometries. The single negative-permeability or -permittivity of these MTM TLs which associated with the resultant multitransmission zeros occurs by turns and should benefit devices with high selectivity requirement. Potential application of these MTM cells are illustrated by two examples, one is the microstrip stepped-impedance transformers (SIT) operating at 3.5 GHz with two edged attenuation poles to introduce selectivity; the other one is the Hi-Lo microstrip low-pass filter (LPF) with cutoff frequency 2.5 GHz exhibiting improved selectivity (77.3 dB/GHz). By constructing the low-impedance sections as hybrid prefractal shape and crown square, both the SITs and LPF obtained additional bandwidth enhancement and good matching. Consistent results between simulation and measurement have confirmed the design concept.
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19

Shrestha, Bijaya. "Design of Low Noise Amplifier for 1.5 GHz." SCITECH Nepal 13, no. 1 (September 30, 2018): 40–47. http://dx.doi.org/10.3126/scitech.v13i1.23500.

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Low Noise Amplifier (LNA) is a front-end device of a radio frequency (RF) receiver used to increase the amplitude of an RF signal without much additional noise, thereby increasing the noise figure of the system. This paper presents design, simulation, and prototype of an LNA operating at 1.5 GHz for the bandwidth of 100 MHz. The circuit was simulated using Advanced Design System (ADS). The components used are Surface Mount Devices (SMDs); with transistor "Infineon BFP420" as a major component. Other components are resistors, capacitors, and inductors; inductors being superseded by microstrip lines. The circuit was fabricated on FR4 board. The measurements of several parameters of LNA were made using Vector Network Analyzer (VNA), Noise Figure Meter; and Spectrum Analyzer. The LNA has minimum gain of 15.4 dB and maximum noise figure of 1.33 dB. It is unconditionally stable from 50 MHz to 10 GHz. DC supply is 5V and the current consumption is 10 mA. This LNA offers Output-Third­Order-Intercept-Point (OJP3) of about 1 4 dBm.
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20

Colaiuda, Davide, Iolanda Ulisse, and Giuseppe Ferri. "Rectifiers’ Design and Optimization for a Dual-Channel RF Energy Harvester." Journal of Low Power Electronics and Applications 10, no. 2 (April 4, 2020): 11. http://dx.doi.org/10.3390/jlpea10020011.

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This paper presents the design and implementation of two front-ends for RF (Radio Frequency) energy harvesting, comparing them with the commercial one—P2110 by Powercast Co. (Pittsburgh, PA, USA) Both devices are implemented on a discrete element board with microstrip lines combined with lumped elements and are optimized for two different input power levels (−10 dBm and 10 dBm, respectively), at the GSM900 frequencies. The load has been fixed at 5kΩ, after a load-pull analysis on systems. The rectifiers stages implement two different Schottky diodes in two different topologies: a single diode and a 2-stage Dickson’s charge pump. The second one is compared with the P2110 by generating RF fields at 915 MHz with the Powercast Powerspot. The main aim of this work is to design simple and efficient low-cost devices, which can be used as a power supply for low-power autonomous sensors, with better performances than the current solutions of state-of-the-art equipment, providing an acceptable voltage level on the load. Measurements have been conducted for input power range −20 dBm up to 10 dBm; the best power conversion efficiency (PCE) is obtained with the second design, which reaches a value of 70% at 915 MHz. In particular, the proposed device exhibited better performance compared to the P2110 commercial device, allowing a maximum distance of operation of up to 22 meters from the dedicated RF power source, making it suitable even for IoT (Internet of Things) applications.
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Lan, Yu, and Yuehang Xu. "Bending Limit Tests for Ultra-Thin Liquid Crystal Polymer Substrate Based on Flexible Microwave Components." Micromachines 9, no. 10 (October 20, 2018): 531. http://dx.doi.org/10.3390/mi9100531.

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In this paper, bending limit tests for one ultra-thin liquid crystal polymer (LCP) substrate (Rogers 3850) based on the mechanical properties of flexible microwave microstrip components are presented. First, a set of 50 Ω microstrip lines, a band-pass filter, and a stepped impedance filter in X-band, are designed by using double clapped LCPs with 50 μm thickness of substrate and 18 μm thickness of copper, which is fabricated by conventional photolithography. Then, the limit tests of the flexibility of the LCP microwave microstrip components are presented, and the range of the bending limit radius, from 1 mm to 0.75 mm, is demonstrated from the testing results. It is found that the cause for component failure is fracture of the copper (18 μm thickness) laminate, according to the bending limit test experiments. Finally, the analysis of the reasons for the collapse of the microwave components, under bending situations, is explored. The results from this work would be useful for further designs of the flexible microwave devices and systems on LCP substrates, with compact sizes and good performance.
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Chen, Chia-Mao, Shoou-Jinn Chang, Yen-Liang Pan, Cheng-Yi Chen, and Cheng-Fu Yang. "Fabrication of Compact Microstrip Line-Based Balun-Bandpass Filter with High Common-Mode Suppression." Mathematical Problems in Engineering 2014 (2014): 1–6. http://dx.doi.org/10.1155/2014/985064.

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A new type of balun-bandpass filter was proposed based on the traditional coupled-line theory and folded open-loop ring resonators (OLRRs) configuration. For that, a new device with both filter-type and balun-type characteristics was investigated and fabricated. Both magnetic and electric coupling structures were implemented to provide high performance balun-bandpass responses. The fabricated balun-bandpass filters had a wide bandwidth more than 200 MHz and a low insertion loss less than 2.51 dB at a center frequency of 2.6 GHz. The differences between the two outputs were below 0.4 dB in magnitude and within 180 ± 7° in phase. Also, the balun-bandpass filter presented an excellent common-mode rejection ratio over 25 dB in the passband. An advanced design methodology had been adopted based on EM simulation for making these designed parameters of OLRRs, microstrip lines, and open stubs. The measured frequency responses agreed well with simulated ones.
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23

Fady, Brahim, Abdelwahed Tribak, Jaouad Terhzaz, and Fatima Riouch. "Novel Low-Cost Integrated Multiband Antenna Design Customized for Smartwatch Applications with SAR Evaluation." International Journal of Antennas and Propagation 2020 (December 15, 2020): 1–14. http://dx.doi.org/10.1155/2020/8833839.

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This paper presents a novel low-cost integrated multiband antenna design customized for smartwatch applications and wearable devices. The design consists in using a broadband planar patch antenna with circular microstrip lines and a miniaturized feeding-point with a structure of 30 × 30 × 1.6 mm3, and it is easy to deploy inside the smartwatch and cost-effective for the wearable device industry. The parametric study and final dimensions of the design and the measured results of the reflection and radiation pattern are discussed. The antenna with maximum gain up to 6.6 dBi and S11 up to −22 dB exhibits excellent performance for all the frequencies required in wearable systems such as 1.9 GHz, 2.3 GHz, 2.4 GHz, 2.6 GHz, 5.2 GHz, and 5.8 GHz. We drew a comparison between similar research and this work in terms of antenna performance. Furthermore, we investigate the specific absorption rate (SAR) performance of the antenna for the smartwatch application, using both human hand wrist multilayer and SAM head mouth models. The SAR results in different positions for all the frequencies are compared to the Federal Communication Commission (FCC) standards.
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24

Cheng, Chien Min, Kai Huang Chen, Yuan Tai Hsieh, Fuh Cheng Jong, and Shih Fang Chen. "Develop Dual-Mode DGS Bandpass Filters Using High Quality Factor Aluminum Oxide Ceramic Substrates." Key Engineering Materials 512-515 (June 2012): 1115–18. http://dx.doi.org/10.4028/www.scientific.net/kem.512-515.1115.

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Aluminum Oxide microwave dielectric ceramics exhibit good microwave dielectric characteristics and suitable be used in the microwave devices. In this letter, using screen-printing technique and Ag/Pd paste, a novel dual-mode 2.4 GHz microstrip bandpass filter with U-shaped defected ground structure is screen printed on the Aluminum Oxide (Al2O3, relative dielectric constant=9.8) microwave dielectric ceramic substrate. In addition, a pair of input/output microstrip lines are designed to be 50 Ω and coupled to a λ/4×λ/4 square loop resonator. And in the ground plane, a U-shaped defected ground structure is used toλ excite the degenerate modes, which can be considered as a perturbation element to control the odd-mode frequency and -3 dB bandwidth of the bandpass filter. Finally, the coupling effects between these degenerate modes are presented and detailed investigated.
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25

Muñoz-Enano, J., P. Vélez, M. Gil, E. Jose-Cunilleras, A. Bassols, and F. Martín. "Characterization of electrolyte content in urine samples through a differential microfluidic sensor based on dumbbell-shaped defected ground structures." International Journal of Microwave and Wireless Technologies 12, no. 9 (April 27, 2020): 817–24. http://dx.doi.org/10.1017/s1759078720000446.

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AbstractIn this paper, a differential microfluidic sensor and comparator based on a pair of microstrip lines loaded with dumbbell-shaped defected ground structure resonators is applied to the characterization of electrolyte concentration in samples of horse urine. Since variations in the total electrolyte content in urine may be indicative of certain pathologies, the interest is to use the device as a comparator, in order to determine changes in the electrolyte concentration as compared to a reference level. To validate the approach, we have made differential measurements of a set of urine samples with different electrolyte concentrations (which have been previously obtained by means of electrochemical methods). The obtained results correlate with the nominal electrolyte concentrations of the samples, thereby pointing out the potential of the approach as a low-cost pre-screening method (or complementary diagnosis system) to detect potential pathologies or diseases in horses and other animals.
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Michalski, J., J. Mazur, and M. Mazur. "Scattering in a section of ferrite-coupled microstrip lines: theory and application in nonreciprocal devices." IEE Proceedings - Microwaves, Antennas and Propagation 149, no. 5 (December 1, 2002): 286–90. http://dx.doi.org/10.1049/ip-map:20020571.

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Kim, G. Y., A. V. Nosov, R. S. Surovtsev, T. T. Gazizov, and A. E. Maximov. "Conditions for ultrashort pulse decomposition in multi-cascade protection devices based on meander microstrip lines." Journal of Physics: Conference Series 1679 (November 2020): 022059. http://dx.doi.org/10.1088/1742-6596/1679/2/022059.

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28

Thiruvenkadam, Saminathan, Eswaran Parthasarathy, Sandeep Kumar Palaniswamy, Sachin Kumar, and Lulu Wang. "Design and Performance Analysis of a Compact Planar MIMO Antenna for IoT Applications." Sensors 21, no. 23 (November 27, 2021): 7909. http://dx.doi.org/10.3390/s21237909.

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This article presents a quad-band multiple-input-multiple-output (MIMO) antenna for the Internet of Things (IoT) applications. The proposed antenna consists of four quarter-wavelength asymmetrical meandered radiators, microstrip feed lines, and modified ground planes. The antenna elements are arranged in a chiral pattern to improve isolation between them, with two radiators and two ground planes placed on the front side of the substrate and the other two on the back side. The MIMO antenna has an operating bandwidth (S11 ≤ −10 dB) of 1.76–1.84 GHz, 2.37–2.56 GHz, 3.23–3.68 GHz, and 5.34–5.84 GHz, covering GSM, WLAN, WiMAX, and 5G frequency bands. The isolation between the radiating elements is greater than 18 dB in the operating bands. The peak gain of the antenna is 3.6 dBi, and the envelope correlation coefficient (ECC) is less than 0.04. Furthermore, the proposed antenna is validated for IoT-based smart home (SH) applications. The prototype MIMO antenna is integrated with a commercially available ZigBee device, and the measured values are found to be consistent with the expected results. The proposed MIMO antenna could be a good candidate for IoT systems/modules due to its low profile, compact size, lightweight, and easy integration with wireless communication devices.
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Islam, Mohammad Tariqul, Ahasanul Hoque, Ali F. Almutairi, and Nowshad Amin. "Left-Handed Metamaterial-Inspired Unit Cell for S-Band Glucose Sensing Application." Sensors 19, no. 1 (January 5, 2019): 169. http://dx.doi.org/10.3390/s19010169.

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This paper presents an oval-shaped sensor design for the measurement of glucose concentration in aqueous solution. This unit cell sensing device is inspired by metamaterial properties and is analytically described for better parametric study. The mechanism of the sensor is a sensing layer with varying permittivity placed between two nozzle-shaped microstrip lines. Glucose aqueous solutions were characterized considering the water dielectric constant, from 55 to 87, and were identified with a transmission coefficient at 3.914 GHz optimal frequency with double negative (DNG) metamaterial properties. Consequently, the sensitivity of the sensor was estimated at 0.037 GHz/(30 mg/dL) glucose solution. The design and analysis of this sensor was performed using the finite integration technique (FIT)-based Computer Simulation Technology (CST) microwave studio simulation software. Additionally, parametric analysis of the sensing characteristics was conducted using experimental verification for the justification. The performance of the proposed sensor demonstrates the potential application scope for glucose level identification in aqueous solutions regarding qualitative analysis.
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Wu, Guoan, Siyuan Dong, and Qinfen Xu. "The Integrated Design of Power Dividerand Low-pass Filter." Frequenz 72, no. 11-12 (November 27, 2018): 517–21. http://dx.doi.org/10.1515/freq-2017-0206.

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Abstract A compact filtering Wilkinson power divider with harmonic suppression based on lumped components is presented in this paper. The new divider uses two 5th-order elliptic-function low-pass filters to replace the quarter wavelength microstrip lines of the conventional Wilkinson power divider. The structure combines the power divider and the filter into a complete device. By integrating elliptic low-pass filters with the power divider, the proposed structure can suppress harmonics due to the filter’s band-notched characteristic. The power divider demonstrates a measured suppression of 37.1 dB for the second harmonic, 36.6 dB for the third harmonic, 38.6 dB for the fourth harmonic respectively. The harmonic suppression is higher than 20 dB from 2.75 to 7.035 GHz. Furthermore, lumped components are utilized to achieve improvement on size reduction. Compared with the conventional divider, the proposed structure effectively reduces the size by 77 %. The insertion loss is 3.2 dB at the center frequency (1.45GHz).
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Bie, Shuhang, and Shi Pu. "Array Design of 300 GHz Dual-Band Microstrip Antenna Based on Dual-Surfaced Multiple Split-Ring Resonators." Sensors 21, no. 14 (July 19, 2021): 4912. http://dx.doi.org/10.3390/s21144912.

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To meet the increasing need of high-data-rate and broadband wireless communication systems, the devices and its circuits R&D under Millimeter, Sub-Millimeter, or even Terahertz (THz) frequency bands are attracting more and more attention from not only academic, but also industrial areas. Most of the former research on the THz waveband (0.1–10 THz) antenna design is mainly focused on realizing high directional gain, such as horn antennas, even though the coverage area is very limited when comparing with the current Wi-Fi system. One solution for the horizontally omnidirectional communication antenna is using the structure of multiple split-ring resonators (MSRRs). Aiming at this point, a novel 300 GHz microstrip antenna array based on the dual-surfaced multiple split-ring resonators (DSMSRRs) is proposed in this paper. By employing the two parallel microstrip transmission lines, different MSRRs are fed and connected on two surfaces of the PCB with a centrally symmetric way about them. The feeding port of the whole antenna is in between the centers of the two microstrip lines. Thus, this kind of structure is a so-called DSMSRR. Based on the different size of the MSRRs, different or multiple working wavebands can be achieved on the whole antenna. Firstly, in this paper, the quasi-static model is used to analyze the factors affecting the resonance frequency of MSRRs. Simulation and measured results demonstrate that the resonant frequency of the proposed array antenna is 300 GHz, which meets the design requirements of the expected frequency point and exhibits good radiation characteristics. Then, a dual-band antenna is designed on the above methods, and it is proved by simulation that the working frequency bands of the proposed dual-band antenna with reflection coefficient below −10 dB are 274.1–295.6 GHz and 306.3–313.4 GHz.
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32

Chekushkin, Artem M., Lyudmila V. Filippenko, Vadim V. Kashin, Mikhail Yu Fominskiy, and Valery P. Koshelets. "Investigation of thin films for fabrication of Nb/AlN/NbN tunnel junctions and microstrip lines of NbTiN-SiO2-Al." Radioelectronics. Nanosystems. Information Technologies. 13, no. 4 (December 29, 2021): 419–26. http://dx.doi.org/10.17725/rensit.2021.13.419.

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The surface of thin films of Nb, Al, NbTiN, SiO2, Al2O3 is investigated in this work. These films are necessary for the fabrication of high-sensitive devices of THz range. The fabrication processes of such devices are described briefly. All films were fabricated using a Kurt J. Lesker magnetron sputtering system. The study of the film surface roughness was carried out using a Bruker Ikon atomic force microscope. The surface quality of films is determined not only deposition mode, but plasma etching process also. The best values of the root-mean-square deviation of the surface profile Rq = 2 nm were obtained for the used NbTiN film with a thickness of 325 nm. Thin Al-layers that is used for tunnel barrier formation is studied. It is shown than Al films with a thickness of more than 6 nm are already continuous. The surface roughness of the single-layer and multilayer films has been studied.
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33

Kim, Sungjun, Arthur Yang Zhang, Mark Bachman, and G. P. Li. "3D Transmission Line Design for High Power RF Components in Laminates." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2011, DPC (January 1, 2011): 000580–96. http://dx.doi.org/10.4071/2011dpc-ta23.

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High power (> 30 dBm) RF components such as switches, passives and RF MEMS can be embedded in an advanced 3D package in laminates. We report a novel transmission line and interconnection design for these embedded high power devices. Typical RF signal path consists of input signal lines (microstrip sand coplanar waveguides), interconnections between laminate layers, and RF devices. 3D configurations of multiple buried via holes are first simulated in the HFSS environment and then tested on laminate prototypes for optimized RF performance. Loss points are carefully identified and removed in the design by distributing RF current in a network of interconnections. Extra cooling considerations are included to significantly reduce thermal stress on the system as well as individual components. The final transmission line design can supply over 50 W of RF power into a 12 layer laminate system.
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34

Słobodzian, Piotr, Krzysztof Szostak, Katarzyna Skowronek, Laura Jasińska, and Karol Malecha. "An Ultrahigh Sensitive Microwave Microfluidic System for Fast and Continuous Measurements of Liquid Solution Concentrations." Sensors 21, no. 17 (August 29, 2021): 5816. http://dx.doi.org/10.3390/s21175816.

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In this paper, we describe a low-cost microwave microfluidic system of ultrahigh sensitivity for detecting small changes in the concentration of polar solutions (liquid dielectrics) in the 2.4 GHz ISM band. Its principle of operation is based on microwave interferometry, which is implemented using planar microstrip lines and integrated microwave components. The key features of this system include small solution intake (<200 µL per measurement), short time of measurement (ca. 20 ms), ultrahigh sensitivity of concentration changes (up to 55 dB/%), and low error of measurement (below 0.1%). The ultrahigh sensitivity was proven experimentally by measurements of the fat content of milk. In addition, it is a user-friendly system due to an effortless and fast calibration procedure. Moreover, it can be made relatively compact (<20 cm2) and features low power consumption (200 mW). Thus, the proposed system is perfect for industrial applications, especially for highly integrated lab-on-chip devices.
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35

Thrasher, Bradley A., Michael A. Skurski, Ken E. Souders, and James M. Parisi. "Microwave Characterization of a Thick Film System for Hybrid Packaging Applications." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2016, CICMT (May 1, 2016): 000203–6. http://dx.doi.org/10.4071/2016cicmt-tha24.

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Abstract Thick film material systems for hybrid applications have existed for many years and have provided the ability to create high density interconnects in industries such as consumer, military, telecommunications and automotive electronic devices. Despite their breadth of applications, thick film hybrid circuits are rarely utilized for microwave/millimeter-wave packaging applications. In this work, the DuPont™ QM44 thick film dielectric is characterized up to 40 GHz. Test samples to characterize this thick film system consisted of the screen-printed QM44 multilayer dielectric and QG150 gold thick film conductor and vias on top of a 96% alumina substrate. Three different fabrication methods were used in the fabrication of the test samples to illustrate the effect of processing techniques on material loss properties, with the conductor lines formed through standard screen printing, chemical etching, and laser ablation. Laser ablation is a technique recently utilized to form transmission line features in low temperature cofired ceramic (LTCC) circuits [1] to increase dimensional precision when compared to standard screen printing. S-parameter measurements of microstrip transmission lines demonstrate a system loss at 30 GHz of approximately 0.8 dB/cm for chemical etching, 0.9 dB/cm for laser ablation, and 1.0 dB/cm for screen printing. Through careful design and good processing, acceptable microwave performance of the QM44 thick film system can be achieved up to 40 GHz.
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36

Tang, Jiajie, and Le Luo. "Wafer Level Integration of MMIC and Microwave IPD with Metal/BCB Multilayer Interconnection Based on Low Resistance Silicon." International Symposium on Microelectronics 2011, no. 1 (January 1, 2011): 001067–73. http://dx.doi.org/10.4071/isom-2011-tha6-paper1.

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A new high-density wafer-level integration of a GaAs based monolithic microwave integrated circuit (MMIC) chip and a microwave integrated passive device (IPD) is presented. This integration technology, an important and IC-compatible option for system-in-package (SiP), utilizes bulk Si fabrication and film deposition based multichip module (MCM-D) process. MMIC is entirely embedded into the silicon wafer while IPDs are integrated on the dielectric layers simultaneously with the metal/BCB multilayer interconnection. Key fabrication processes and crucial technologies are described in detail. Normal silicon wafer is selected as substrate because of its mature processing technology, low cost, good thermal dissipation as well as its thermal expansion matching with GaAs. To obtain excellent microwave performances and good planarization, thick photosensitive BCB of 25um/layer is adopted as dielectric and thus the use of tapered via that is hollow inside or filled by BCB is a cost-effective way to accomplish inter-layer connection instead of Au bump bonding or column used in dry-etch BCB process. Further promotions on microwave performances are achieved by the shielding effect through ground layer coverage on silicon surface and the application of microstrip lines. Several experiment results such as dc inter-layer connection resistance and thermal resistance measurements are complemented to investigate the characteristic of the whole package. The Microwave properties of the integration sample are measured by transmission performance test from 15GHz to 30GHz. The measurement results are analyzed and discussed comparing with the theoretical or simulation results.
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Shereen, Muhammad Kamran, Muhammad Irfan Khattak, Farid Zubir, and Abdul Basit. "A novel single-feed hybrid reconfigurable microstrip patch antenna for 5G mobile communication and radio frequency energy harvesting applications at 28/38GHz." PLOS ONE 17, no. 1 (January 18, 2022): e0260407. http://dx.doi.org/10.1371/journal.pone.0260407.

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Reconfigurable antennas have received much attention in RF energy harvesting models owing to their selectivity for operating frequency and polarization. The characteristic of having frequency selectivity and polarization selectivity can be termed as frequency diversity and polarization diversity, respectively. This paper investigates a rectenna device with a new proposed topology in order to eliminate coupling between input and output lines and increase the rectification efficiency with the use of single feed hybrid reconfigurable antenna, switch between 28GHz and 38GHz frequency. Moreover, it is designed to charge a rechargeable battery of 1watt(W). The Reconfiguration mechanism is realized by electronically controlling different states of Switches. PIN Diode (as RLC Equivalent circuit) is used as a switch for ON/OFF states. This antenna mainly comprises rectangular shaped patches (28GHz and 38GHz) with Triango-Truncated edge at the corners. Eighteen PIN Diodes are placed symmetrically throughout the antenna presenting as, S1 & S2 for frequency reconfiguration, S3 to S6 & S7 to S10 connects Triango Truncated edge at the corners for polarization reconfiguration, and for radiation pattern reconfiguration at S11 to S14 & S15 to S18 has been used. The proposed antenna model is capable of simultaneously changing, the radiation patterns as clock and anti-clockwise directions at ±90-degree shift in E and H planes, circularly polarized (CP) states among, Linear Polarization (LP), Right Hand Circularly Polarization (RHCP), and Left Hand Circularly Polarization (LHCP). The current design describes using single antenna for energy harvesting and 5G mobile communication application. This would lead to higher output currents, leading to the ability to efficiently charge a wide variety of batteries. A fully functional prototype has been designed, fabricated and its compound reconfiguration characteristics have been validated for simulated and measured results. For validation of results, the experimental results and the simulation results from the proposed mathematical model were made into comparison, and excellent correlation between the measured and simulated results was obtained.
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38

Statsenko, Lyubov G., O. A. Pugovkina, A. R. Galay, and Denis A. Kuzin. "Designing Microwave Filters Using Metamaterials." Key Engineering Materials 806 (June 2019): 167–72. http://dx.doi.org/10.4028/www.scientific.net/kem.806.167.

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The possibility to use the split ring resonator – SRR in a microwave filter design is investigated. SRR is made from non-ferrous metals, is one of the variants of the inclusions in the metamaterial. The periodic SRR structure modifies the permittivity and permeability of the source material, to obtain a negative refractive index. These unique properties are widely used in microwave technology, because they allow to create devices with improved performance and extended functionality. Microstrip line with etched SRR on ground plane is considered. The equivalent circuit model for SRR is shown. The paper presents calculation and comparison of the return and transmission responses for SRR structure with series coupling feed lines and with parallel coupling feed lines. The basic relationships for calculating the S-parameters (the return S11(F) and transmission responses S21(F)) are given. S-parameter calculation is made. When the reflection coefficient S11(F) reaches the maximum value, and the transmission coefficient S11(F)- the minimum, the filter operates at the resonance frequency Fp. Simulation are made using the software of Microwave Office. The results are presented in graphs. The dependence of the resonant frequency of the filter from the value of the permittivity of the substrate is found. The effect of the type of metal (copper, gold, silver), from which made the SRR on the resonance frequency of the filter is defined. It is concluded that the increase in the value of the permittivity of the substrate causes a decrease in the value of the resonant frequency of the filter. While the type of metal material of the SRR, on the resonance filter properties do not have a significant influence. The research results will reduce the time spent on the design and optimization of the design parameters.
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39

Rahman, Akhlaq, Fred Olinger, and Michael Howieson. "Rated Power Enhancement of Termination Resistor by Employing Innovative Thermal Management Techniques." International Symposium on Microelectronics 2011, no. 1 (January 1, 2011): 000921–24. http://dx.doi.org/10.4071/isom-2011-tha2-paper1.

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Wireless telecommunication, broadcast and radar industries rely on high power transmission of the radio waves to reach subscribers or measure the environment. As the wireless revolution extends, component requirement in higher frequency, elevated operating power, smaller in size, and improved performance demands on resistive devices grow even more stringent. In this work, we extensively studied to improve the power handling capability of termination resistor while maintaining the smaller size. We optimized the energy transmission within the component and significantly improved the efficiency of energy transfer between the transmission lines and the terminations. We explored several innovative techniques to optimize thermal management. We applied new packaging techniques and developed termination resistors with optimum thermal management. We discussed several methods of improving power handling capability and reduction of thermal fatigue to the component’s structure by improving component packaging technology. Applying the packaging technology methods we significantly reduced the chance of solder cracking due to thermal fatigue. Employing novel techniques of heat transfer we appreciably increased power handling capability while keeping the product size as minimum. We constructed matching network using integrated microstrip line at the beginning of the resistor material. Considering required thermal performance, we designed and manufactured Pb free high power termination resistor. Several sizes of resistor are manufactured with rated power of 20 W and 100 W. Thermal profiles of the termination resistors illustrates the high power handling capability of the fabricated termination resistors.
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40

Sharma, Arvind K. "Microstrip lines and slot lines, second edition." International Journal of RF and Microwave Computer-Aided Engineering 8, no. 1 (January 1998): 77–78. http://dx.doi.org/10.1002/(sici)1099-047x(199801)8:1<77::aid-mmce11>3.0.co;2-j.

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41

Anpilogov, V. R., I. V. Zimin, and Yu N. Chekushkin. "Dissipative Losses in the Microstrip Lines and Microstrip Antennas." Rocket-space device engineering and information systems 5, no. 3 (2018): 60–69. http://dx.doi.org/10.30894/issn2409-0239.2018.5.3.60.69.

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42

Triki, Faouzi, and Habib Ammari. "Resonances for Microstrip Transmission Lines." SIAM Journal on Applied Mathematics 64, no. 2 (January 2004): 601–36. http://dx.doi.org/10.1137/s0036139902418390.

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43

Brews, J. R. "Characteristic Impedance of Microstrip Lines." IEEE Transactions on Microwave Theory and Techniques 35, no. 1 (January 1987): 30–34. http://dx.doi.org/10.1109/tmtt.1987.1133591.

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44

Pond, J., J. Claassen, and W. Carter. "Kinetic inductance microstrip delay lines." IEEE Transactions on Magnetics 23, no. 2 (March 1987): 903–6. http://dx.doi.org/10.1109/tmag.1987.1064872.

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45

Hill, D. A., K. H. Cavcey, and R. T. Johnk. "Crosstalk between microstrip transmission lines." IEEE Transactions on Electromagnetic Compatibility 36, no. 4 (1994): 314–21. http://dx.doi.org/10.1109/15.328861.

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46

Chang, K., and J. Klein. "Dielectrically shielded microstrip (DSM) lines." Electronics Letters 23, no. 10 (May 7, 1987): 535–37. http://dx.doi.org/10.1049/el:19870386.

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47

Xiaodong, Wu, and Lin Weigan. "Characteristics of microstrip transmission lines." Journal of Electronics (China) 7, no. 1 (January 1990): 1–5. http://dx.doi.org/10.1007/bf02778715.

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48

Pulov, R. D., S. N. Romanenko, and L. M. Karpukov. "Dispersion Properties of Coupled Microstrip Lines." Telecommunications and Radio Engineering 51, no. 4 (1997): 32–37. http://dx.doi.org/10.1615/telecomradeng.v51.i4.50.

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49

KHALAJ-AMIRHOSSEINI, MOHAMMAD, and AHMAD CHELDAVI. "Circular symmetric coupled Microstrip transmission lines." International Conference on Electrical Engineering 6, no. 6 (May 1, 2008): 1–14. http://dx.doi.org/10.21608/iceeng.2008.34384.

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50

Cheldavi, A., and M. Khalaj Amirhosseini. "NONUNIFORM CIRCULANT SYMMETRIC MICROSTRIP TRANSMISSION LINES." Journal of Electromagnetic Waves and Applications 17, no. 12 (January 2003): 1703–12. http://dx.doi.org/10.1163/156939303322760227.

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