Journal articles: 'Deposited thin films'

1

Verde, M. "EPD-deposited ZnO thin films: a review." Boletín de la Sociedad Española de Cerámica y Vidrio 53, no. 4 (August 30, 2014): 149–61. http://dx.doi.org/10.3989/cyv.192014.

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Kim, Sun Kyu, and Vuong Hung Pham. "Cell Adhesion on Cathodic Arc Plasma Deposited ZrAlSiN Thin Films." Korean Journal Metals and Materials 51, no. 12 (December 5, 2013): 907–12. http://dx.doi.org/10.3365/kjmm.2013.51.12.907.

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M. A. Barote, M. A. Barote. "Structural and morphological properties of spray deposited CdO thin films." Indian Journal of Applied Research 3, no. 9 (October 1, 2011): 514–16. http://dx.doi.org/10.15373/2249555x/sept2013/156.

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4

Studenyak, I. P. "Optical studies of as-deposited and annealed Cu7GeS5I thin films." Semiconductor Physics Quantum Electronics and Optoelectronics 19, no. 2 (July 6, 2016): 192–96. http://dx.doi.org/10.15407/spqeo19.02.192.

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Chang, Chin Chuan, Shu Ling Wang, Wen Chi Tseng, and Meng Jiy Wang. "Plasma Polymerized Thin-Films for Biosensors." Advanced Materials Research 47-50 (June 2008): 1367–70. http://dx.doi.org/10.4028/www.scientific.net/amr.47-50.1367.

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Plasma polymerization is an effective method to directly deposit ultra-thin film on substrates with advantageous properties such as good adhesion and biocompatibility. In this paper, the monomers containing amine groups with various unsaturated structures (propylamine, allylamine) are chosen to provide amine functionalities and to promote biocompatibilities for the polymerized thin films. The deposition rates revealed by measuring the thickness of thin films are characterized by profilometer under various plasma conditions. FTIR and AFM are used to study the chemical structures and morphology of the deposited thin films. In order to examine the applicability of the deposited polymers for biosensors, the activities of the incorporated biomolecules on deposited thin films are analyzed. Chinese hamster ovary (CHO) cells are cultivated on the polymerized thin films. Both propylamine and allylamine polymerized thin films show enhanced cell viability than on glass slide substrates.

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Spassova, E. "Vacuum deposited polyimide thin films." Vacuum 70, no. 4 (April 2003): 551–61. http://dx.doi.org/10.1016/s0042-207x(02)00783-2.

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Jelínek, M., L. Jastrabík, V. Olšan, L. Soukup, M. Šimečková, R. Černý, E. Kluenkov, and L. Mazo. "Laser deposited YBaCuO thin films." Czechoslovak Journal of Physics 43, no. 6 (June 1993): 661–69. http://dx.doi.org/10.1007/bf01591540.

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8

Sindhu, H. S., Sumanth Joishy, B. V. Rajendra, and P. D. Babu. "Influence of Precursor Solution Concentration on Structure and Magnetic Properties of Zinc Oxide Thin Films." Key Engineering Materials 724 (December 2016): 43–47. http://dx.doi.org/10.4028/www.scientific.net/kem.724.43.

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Zinc oxide thin films were deposited on glass substrate at a substrate temperature of 673K by spray pyrolysis method using different concentration of 0.0125M, 0.025M and 0.05M of Zinc acetate solutions. The effect of molar concentrations on structure, surface morphology and magnetic properties of ZnO films were investigated using x-ray diffraction, scanning electron microscopy and vibrating sample magnetometer. All deposited films were polycrystalline in nature with hexagonal wurtzite structure having a preferential growth orientation along (101) plane. An improvement of crystallinity in the deposits with increasing concentration of sprayed solution was noticed. All deposit exhibit fibrous structure which increases with increase of precursor concentration solutions. At room temperature, all deposited films were shown diamagnetic character but when cooled to 5K, they have shown paramagnetic characteristics.

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SHUR, MICHAEL S., SERGEY L. RUMYANTSEV, and REMIS GASKA. "SEMICONDUCTOR THIN FILMS AND THIN FILM DEVICES FOR ELECTROTEXTILES." International Journal of High Speed Electronics and Systems 12, no. 02 (June 2002): 371–90. http://dx.doi.org/10.1142/s0129156402001320.

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We discuss the evolution from wearable electronics and conductive textiles to electrotextiles with embedded semiconducting films and semiconductor devices and review different semiconductor technologies competing for applications in electrotextiles. We also report on fabrication, characterization, and properties of nanocrystalline semiconductor and metal films and thin-film device structures chemically deposited on fibers, cloth, and large area flexible substrates at low temperatures (close to room temperature). Our approach is based on a new process of depositing polycrystalline CdSe (1.75 eV), CdS (2.4 eV), PbS (0.4 eV), PbSe (0.24 eV) and CuxS (semiconductor/metal) films on flexible substrates from the water solutions of complex-salt compounds. We have covered areas up to 8 × 10 inches but the process can be scaled up. The film properties are strongly affected by processing. We fabricated a lateral solar cell with alternating Cu2-xS and nickel contact stripes deposited on top of a view foil. These sets of contacts represented "ohmic" and "non-ohmic" contacts, respectively. Then CdS films of approximately 0.5 μm thick were deposited on top. We also fabricated a "sandwich" type photovoltaic cell, where the CdS film was sandwiched between an In2O3 layer deposited on a view foil and a Cu2-xS layer deposited on top. Both structures exhibited transient response under light, with the characteristic response time decreasing with the illumination wavelength. This is consistent with having deeper localized states in the energy gap determining the transients for shorter wavelength radiation. (Slow transients related to trapping effects are typical for polycrystalline CdS materials.) We also report on the photovoltaic effect in CdS/CuS films deposited on trylene threads and on a field effect in these films deposited on a flexible copper wire. CdS films deposited on viewfoils exhibit unique behavior under stress and UV radiation exposure with reproducible resistance changes of several orders of magnitude with bending up to 10 mm curvature. Our results clearly demonstrate the feasibility of using this technology for photovoltaic and microelectronics applications for electrotextiles and wearable electronics applications.

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Kim, Sun Kyu, and Vuong Hung Pham. "Osteoblast Adhesion on Cathodic Arc Plasma Deposited Nano-Multilayered TiCrAlSiN Thin Films." Korean Journal of Metals and Materials 52, no. 3 (March 5, 2014): 243–48. http://dx.doi.org/10.3365/kjmm.2014.52.3.243.

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11

Gordon, Roy G., Umar Riaz, and David M. Hoffman. "Chemical vapor deposition of aluminum nitride thin films." Journal of Materials Research 7, no. 7 (July 1992): 1679–84. http://dx.doi.org/10.1557/jmr.1992.1679.

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The atmospheric pressure chemical vapor deposition of aluminum nitride coatings from hexakis(dimethylamido)dialuminum, Al2(N(CH3)2)6, and ammonia precursors is reported. The films were characterized by ellipsometry, transmission electron microscopy, x-ray photoelectron spectroscopy, Rutherford backscattering, and forward recoil spectrometry. The films were deposited at 100–500 °C with growth rates up to 1500 Å/min. The films showed good adhesion to silicon, glass, and quartz substrates and were chemically inert. Rutherford backscattering analysis revealed that the N/Al ratio was 1.15 ± 0.05 for films deposited at 100–200 °C and 1.05 ± 0.05 for those deposited at 300–500 °C. Films deposited at 100–200 °C had refractive indexes in the range 1.65–1.80 whereas indexes for films deposited at 300–400 °C were 1.86–2.04. The films were transparent in the visible region. The optical bandgap varied from 5.0 eV for films deposited at 100 °C to 5.77 eV for those deposited at 500 °C. Films deposited at 100–200 °C were amorphous whereas those deposited at 300–500 °C were polycrystalline.

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Robbie, K., C. Shafai, and M. J. Brett. "Thin films with nanometer-scale pillar microstructure." Journal of Materials Research 14, no. 7 (July 1999): 3158–63. http://dx.doi.org/10.1557/jmr.1999.0423.

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Thin films possessing microstructure composed of isolated vertical pillars were deposited by glancing angle deposition (GLAD) without the need for subsequent etch processing. The GLAD technique uses substrate rotation and oblique angle flux incidence to deposit a porous columnar thin film with engineered microstructures. Thin films with a pillar microstructure were fabricated from a variety of metals, metal oxides and fluorides, and semiconductors. The rate and incident angle of vapor flux, as well as the substrate rotation speed during deposition, were found to critically affect pillar microstructure. Thin films with pillar diameters and densities as low as 30 nm and 3 pillars per μm2, respectively, were deposited. The low stress, high surface area, and porous nature of these films suggests use of pillar microstructure films in optical, chemical, biological, mechanical, magnetic, and electrical applications.

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13

Sharma, Renu. "Characterization of TiSi2/TiN thin films on Si by HREM." Proceedings, annual meeting, Electron Microscopy Society of America 50, no. 2 (August 1992): 1360–61. http://dx.doi.org/10.1017/s0424820100131437.

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Titanium Nitride is commonly used as a diffusion barrier layer in Al-Si contacts. There are different techniques employed to deposit TiN layers on silicon, out of them thermally grown and reactively sputtered are most common. Reactive sputtering is a one step process and is favoured for manufacturing. The orientation of TiN thin films controls the orientation of Al films deposited. As sputtered films has random orientation hence the overlying Al films is randomly oriented as well. In order to achieve higher electromagnetic resistance, Al films should be well oriented. Thermally grown TiN thin films are highly oriented but their thickness is limited to about 20nm. We have used HREM and micro-analytical techniques to analyze the thickness, structure and compositions of various layers formed during thermal growth of TiN layers deposited under different conditions.Thermally grown Ti films on Si <100> wafers of varying thicknesses were deposited and annealed in NH3 atmosphere at different temperatures and times. Second layer of titanium was deposited and processed on some of the samples (double process) in order to increase the thickness of TiN layer.

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14

Brankovic, Zorica, G. Brankovic, A. Tucic, A. Radojkovic, E. Longo, and J. A. Varela. "Aerosol deposition of Ba0.8Sr0.2TiO3 thin films." Science of Sintering 41, no. 3 (2009): 303–8. http://dx.doi.org/10.2298/sos0903303b.

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In this work we optimized conditions for aerosol deposition of homogeneous, nanograined, smooth Ba0.8Sr0.2TiO3 thin films. Investigation involved optimization of deposition parameters, namely deposition time and temperature for different substrates. Solutions were prepared from titanium isopropoxide, strontium acetate and barium acetate. Films were deposited on Si (1 0 0) or Si covered by platinum (Pt (1 1 1) /Ti/SiO2/Si). Investigation showed that the best films were obtained at substrate temperature of 85?C. After deposition films were slowly heated up to 650?C, annealed for 30 min, and slowly cooled. Grain size of BST films deposited on Si substrate were in the range 40-70 nm, depending on deposition conditions, while the same films deposited on Pt substrates showed mean grain size in the range 35-50 nm. Films deposited under optimal conditions were very homogeneous, crackfree, and smooth with rms roughness lower than 4 nm for both substrates.

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15

Bharathi, B., S. Thanikaikarasan, P. V. Chandrasekar, Pratap Kollu, T. Mahalingam, and Luis Ixtlilco. "Studies on Electrodeposited NiS Thin Films." Journal of New Materials for Electrochemical Systems 17, no. 3 (October 3, 2014): 167–71. http://dx.doi.org/10.14447/jnmes.v17i3.417.

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Thin films of NiS have been deposited on indium doped tin oxide coated conducting glass substrates using electrodeposition technique. Structural studies revealed that the deposited films exhibit hexagonal structure with preferential orientation along (002) plane. Structural parameters such as crystallite size, strain and dislocation density are calculated for films with different thickness values obtained at various deposition time. The film composition and surface morphology have been analyzed using scanning electron microscopy and energy dispersive analysis by X-rays. Optical absorption analysis showed that the deposited films possess band gap value around 0.7 eV.

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16

Golia, Santosh, M. Arora, R. K. Sharma, and A. C. Rastogi. "Electrochemically deposited bismuth telluride thin films." Current Applied Physics 3, no. 2-3 (April 2003): 195–97. http://dx.doi.org/10.1016/s1567-1739(02)00200-6.

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17

Thangaraju, B., and P. Kaliannan. "Spray pyrolytically deposited PbS thin films." Semiconductor Science and Technology 15, no. 8 (July 28, 2000): 849–53. http://dx.doi.org/10.1088/0268-1242/15/8/311.

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18

Nanu, M., L. Reijnen, B. Meester, J. Schoonman, and A. Goossens. "CuInS2 Thin Films Deposited by ALD." Chemical Vapor Deposition 10, no. 1 (January 16, 2004): 45–49. http://dx.doi.org/10.1002/cvde.200306262.

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19

Hwang, Kyu-Seog, Ju-Hyun Jeong, Young-Sun Jeon, Kyung-Ok Jeon, and Byung-Hoon Kim. "Electrostatic spray deposited ZnO thin films." Ceramics International 33, no. 3 (April 2007): 505–7. http://dx.doi.org/10.1016/j.ceramint.2005.10.023.

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20

Van Glabbeek, J. J., and R. E. Van de Leest. "Thin vapour-deposited niobium pentoxide films." Thin Solid Films 201, no. 1 (June 1991): 137–45. http://dx.doi.org/10.1016/0040-6090(91)90161-p.

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21

Dimitrov, D. Z., and V. S. Kozhukharov. "Laser-deposited thin TeSeSn alloy films." Thin Solid Films 209, no. 1 (March 1992): 80–83. http://dx.doi.org/10.1016/0040-6090(92)90013-2.

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22

Karim, M. Z., D. C. Cameron, and M. S. J. Hashmi. "Vapour deposited boron nitride thin films." Materials & Design 13, no. 4 (January 1992): 207–14. http://dx.doi.org/10.1016/0261-3069(92)90026-e.

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23

Boidin, Rémi, Tomáš Halenkovič, Virginie Nazabal, Ludvík Beneš, and Petr Němec. "Pulsed laser deposited alumina thin films." Ceramics International 42, no. 1 (January 2016): 1177–82. http://dx.doi.org/10.1016/j.ceramint.2015.09.048.

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Skyllas-Kazacos, M., J. F. McCann, and R. Arruzza. "Chemically deposited alloy semiconductor thin films." Applications of Surface Science 22-23 (May 1985): 1091–97. http://dx.doi.org/10.1016/0378-5963(85)90244-2.

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25

Ravangave L. S, Ravangave L. S., and Biradar U. V. Biradar U. V. "Study of optical parameters of Chemical Bath deposited Cd1- xZnx S thin films." Global Journal For Research Analysis 2, no. 1 (June 15, 2012): 185–88. http://dx.doi.org/10.15373/22778160/january2013/34.

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26

Studenyak, I. P. "Electrical and optical parameters of Cu6PS5I-based thin films deposited using magnetron sputtering." Semiconductor Physics Quantum Electronics and Optoelectronics 19, no. 1 (April 8, 2016): 79–83. http://dx.doi.org/10.15407/spqeo19.01.079.

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27

Ullah, Hadaate, Ridoanur Rahaman, and Shahin Mahmud. "Optical Properties of Cadmium Oxide (CdO) Thin Films." Indonesian Journal of Electrical Engineering and Computer Science 5, no. 1 (January 1, 2017): 81. http://dx.doi.org/10.11591/ijeecs.v5.i1.pp81-84.

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Cadmium (Cd) is a soft, silver-white or blue lustrous metal typically found in mineral deposits with lead, zinc and copper. Cadmium Oxide thin films have been prepared on a glass substrate at 3500C temperature by implementing the Spray Pyrolysis method. The direct and indirect band gap energies are determined using spectral data. The direct and indirect band gap energies decrease with the increasing film thickness. It is noted that for the same film thickness the direct band gap energy is greater than indirect band gap energy. The transmittance increases with the increasing wavelength for annealed and deposited films. It is also noted that for the same wavelength the transmittance for deposited films is greater than the transmittance for annealed films.

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RODRÍGUEZ-LAZCANO, Y., M. T. S. NAIR, and P. K. NAIR. "CuxSbySz THIN FILMS PRODUCED BY ANNEALING CHEMICALLY DEPOSITED Sb2S3-CuS THIN FILMS." Modern Physics Letters B 15, no. 17n19 (August 20, 2001): 667–70. http://dx.doi.org/10.1142/s0217984901002257.

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The possibility of generating ternary compounds through annealing thin film stacks of binary composition has been demonstrated before. In this work we report a method to produce large area coating of ternary compounds through a reaction in solid state between thin films of Sb2S3 and CuS. Thin films of Sb2S3 -CuS were deposited on glass substrates in the sequence of Sb2S3 followed by CuS (on Sb2S3 ) using chemical bath deposition method. The multilayer stack, thus produced, of approximately 0.5 μm in thickness, where annealed under nitrogen and argon atmospheres at different temperatures to produce films of ternary composition, CuxSbySz . An optical band gap of ~1.5 eV was observed in these films, suggesting that the thin films of ternary composition formed in this way are suitable for use as absorber materials in photovoltaic devices. The results on the analyses of structural, electrical and optical properties of films formed with different combinations of thickness in the multilayers will be discussed in the paper.

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29

Iwasaki, Dai, Miho Maruyama, Naonori Sakamoto, De Sheng Fu, Naoki Wakiya, and Hisao Suzuki. "Tunable Barium Strontium Titanate Thin Films by CSD." Key Engineering Materials 445 (July 2010): 156–59. http://dx.doi.org/10.4028/www.scientific.net/kem.445.156.

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BaxSr1-xTiO3 (BST) thin films were deposited by modified CSD, in which partially hydrolyzed Ti-alkoxide was reacted with Ba-Sr precursor solution to form highly polymerized BST precursor solutions, leading to the better electrical properties of the resultant thin films. BST precursor solutions of 0.1 M were prepared to deposit BST thin layers of 17nm ~ 20nm for one dip-coating operation with different barium to strontium ratio of Ba/Sr = 90/10, 70/30 and 50/50. Modified CSD-derived BST thin films were deposited on a Si wafer with Pt electrode or CSD-derived LaNiO3 (LNO) seeding layer with preferred orientation. BST thin films exhibited ferroelectric or paraelectric properties, depending upon the Ba/Sr ratio. Better electrical properties for the BST thin films were observed on a LNO seeding layer. Maximum tunability of our BST film was 41 % at 1MHz.

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30

Chen, Yuan-Tsung. "Nanoindentation and Adhesion Properties of Ta Thin Films." Journal of Nanomaterials 2013 (2013): 1–7. http://dx.doi.org/10.1155/2013/154179.

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Ta films were sputtered onto a glass substrate with thicknesses from 500 Å to 1500 Å under the following conditions: (a) as-deposited films were maintained at room temperature (RT), (b) films were postannealed atTA=150°C for 1 h, and (c) films were postannealed atTA=250°C for 1 h. X-ray diffraction (XRD) results revealed that the Ta films had a body-centered cubic (BCC) structure. Postannealing conditions and thicker Ta films exhibited a stronger Ta (110) crystallization than as-deposited and thinner films. The nanoindention results revealed that Ta thin films are sensitive to mean grain size, including a valuable hardness (H) and Young’s modulus (E). High nanomechanical properties of as-deposited and thinner films can be investigated by grain refinement, which is consistent with the Hall-Petch effect. The surface energy of as-deposited Ta films was higher than that in postannealing treatments. The adhesion of as-deposited Ta films was stronger than postannealing treatments because of crystalline degree effect. The maximalHandEand the optimal adhesion of an as-deposited 500-Å-thick Ta film were 15.6 GPa, 180 GPa, and 51.56 mJ/mm2, respectively, suggesting that a 500-Å-thick Ta thin film can be used in seed and protective layer applications.

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Chowdhury, RI, MS Islam, F. Sabeth, G. Mustafa, SFU Farhad, DK Saha, FA Chowdhury, S. Hussain, and ABMO Islam. "Characterization of Electrodeposited Cadmium Selenide Thin Films." Dhaka University Journal of Science 60, no. 1 (April 15, 2012): 137–40. http://dx.doi.org/10.3329/dujs.v60i1.10352.

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Cadmium selenide (CdSe) thin films have been deposited on glass/conducting glass substrates using low-cost electrodeposition method. X-ray diffraction (XRD) technique has been used to identify the phases present in the deposited films and observed that the deposited films are mainly consisting of CdSe phases. The photoelectrochemical (PEC) cell measurements indicate that the CdSe films are n-type in electrical conduction, and optical absorption measurements show that the bandgap for as-deposited film is estimated to be 2.1 eV. Upon heat treatment at 723 K for 30 min in air the band gap of CdSe film is decreased to 1.8 eV. The surface morphology of the deposited films has been characterized using scanning electron microscopy (SEM) and observed that very homogeneous and uniform CdSe film is grown onto FTO/glass substrate. The aim of this work is to use n-type CdSe window materials in CdTe based solar cell structures. The results will be presented in this paper in the light of observed data.DOI: http://dx.doi.org/10.3329/dujs.v60i1.10352 Dhaka Univ. J. Sci. 60(1): 137-140 2012 (January)

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Česnek, J., J. Dobiáš, J. Houšová, and J. Sedláček. "Properties of thin metallic films for microwave susceptors." Czech Journal of Food Sciences 21, No. 1 (November 18, 2011): 34–40. http://dx.doi.org/10.17221/3475-cjfs.

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Thin Al films of varying thickness, i.e. 3 to 30 nm, were deposited onto polyethylene-terephthalate film by evaporation in the vacuum of 3 × 10–3 Pa. The dependence of DC (direct current) surface resistance on thickness was measured using a four-point method. The surface resistance exhibits the size effect in accordance with the Fuchs-Sondheimer theory. The microwave absorption properties of the prepared films of various metallization thickness were measured in a microwave field at the microwave power of 1.8 mW. The maximum microwave absorption at 2.45 GHz was found to occur in a layer of optical density of about 0.22.

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Nair, P. K., and M. T. S. Nair. "Chemically deposited ZnS thin films: application as substrate for chemically deposited Bi2S3, CuxS and PbS thin films." Semiconductor Science and Technology 7, no. 2 (February 1, 1992): 239–44. http://dx.doi.org/10.1088/0268-1242/7/2/011.

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Checchetto, R., and P. Scardi. "Structural characterization of deuterated titanium thin films." Journal of Materials Research 14, no. 5 (May 1999): 1969–76. http://dx.doi.org/10.1557/jmr.1999.0265.

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Pure and deuterated titanium thin films 140 nm thick were deposited on 〈100〉 Si wafers by electron beam evaporation, keeping the substrate temperature at 150, 300, and 450 °C. Pure Ti samples were deposited in a high-vacuum condition, while for deuterated samples, deuterium high-purity gas was introduced in the deposition chamber during the process. Film composition was studied by Rutherford backscattering spectrometry (RBS) and elastic recoil detection analysis (ERDA), whereas structural characterization of the deposited layers was carried out by x-ray diffraction (XRD) using both the traditional Bragg–Brentano geometry and a parallel beam setup for pole figure measurements. Titanium films deposited in a high vacuum showed the hexagonal Ti structure (α−Ti) and grew with a double orientation at each of the examined substrate temperatures. Deuterated titanium films deposited at 150 °C had a compositional ratio Ti: D = 1: 0.35 and grew with a [111] oriented fcc structure, suggesting the formation at low temperature of a substoichiometric δ hydride phase. Deuterated films deposited at higher substrate temperatures revealed a lower deuterium content and XRD reflections corresponding to the hexagonal Ti phase. The present results were interpreted according to a temperaturedependent D2 adsorption mechanism at the surface of the continuously growing Ti film.

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Phillips, Richard J., Michael J. Shane, and Jay A. Switzer. "Electrochemical and photoelectrochemical deposition of thallium(III) oxide thin films." Journal of Materials Research 4, no. 4 (August 1989): 923–29. http://dx.doi.org/10.1557/jmr.1989.0923.

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Thallium (III) oxide is a degenerate n-type semiconductor with high optical transparency and electrical conductivity. Films of thallium(III) oxide can be electrochemically deposited onto conducting and p-type semiconducting substrates, and photoelectrochemically deposited onto n-type semiconducting substrates. Films deposited at currents below the mass transport limit onto platinum or stainless steel were columnar, and the current efficiency on stainless steel was 103 ±2%. Dendritic films were deposited at mass-transport-limited currents. Films were deposited with thicknesses ranging from 0.1 μm on n-silicon, to 170 μm on stainless steel. The photoelectrochemically deposited films were “direct-written” onto n-silicon, since the material was deposited only at irradiated portions of the electrode. Thin films were grown by irradiating the n-silicon with 450 nm monochromatic light, since the light was strongly absorbed by the thallium(III) oxide. The most uniform thin films were deposited when the n-silicon was initially irradiated with a short pulse of high intensity light. The pulse apparently promoted instantaneous nucleation of a high density of thallium(III) oxide nuclei.

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36

Bulkin, Pavel, Patrick Chapon, Dmitri Daineka, Guili Zhao, and Nataliya Kundikova. "PECVD SiNx Thin Films for Protecting Highly Reflective Silver Mirrors: Are They Better Than ALD AlOx Films?" Coatings 11, no. 7 (June 26, 2021): 771. http://dx.doi.org/10.3390/coatings11070771.

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Protection of silver surface from corrosion is an important topic, as this metal is highly susceptible to damage by atomic oxygen, halogenated, acidic and sulfur-containing molecules. Protective coatings need to be efficient at relatively small thicknesses, transparent and must not affect the surface in any detrimental way, during the deposition or over its lifetime. We compare PECVD-deposited SiNx films to efficiency of ALD-deposited AlOx films as protectors of front surface silver mirrors against damage by oxygen plasma. Films of different thickness were deposited at room temperature and exposed to O2 ECR-plasma for various durations. Results were analyzed with optical and SEM microscopy, pulsed GD-OES, spectroscopic ellipsometry and spectrophotometry on reflection. Studies indicate that both films provide protection after certain minimal thickness. While this critical thickness seems to be smaller for SiNx films during short plasma exposures, longer plasma treatment reveals that the local defects in PECVD-deposited films (most likely due to erosion of some regions of the film and pinholes) steadily multiply with time of treatment and lead to slow drop of reflectance of SiNx-protected mirrors, whereas we showed before that ALD-deposited AlOx films reliably protect silver surface during long plasma exposures.

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OSAKA, T., and T. HOMMA. "ChemInform Abstract: Thin Films. Electrochemically Deposited Thin Films for Magnetic Recording Devices." ChemInform 27, no. 1 (August 12, 2010): no. http://dx.doi.org/10.1002/chin.199601317.

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VIJAYAKUMAR, S., S. NAGAMUTHU, K. K. PURUSHOTHAMAN, M. DHANASHANKAR, and G. MURALIDHARAN. "SUPERCAPACITOR BEHAVIOR OF SPRAY DEPOSITED SnO2 THIN FILMS." International Journal of Nanoscience 10, no. 06 (December 2011): 1245–48. http://dx.doi.org/10.1142/s0219581x11008368.

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Tin oxide thin films were prepared via spray pyrolysis method. The structural and morphological properties of SnO2 thin films have been investigated using X-ray diffraction (XRD) and scanned electron microscope (SEM) analysis. The XRD pattern confirms the tetragonal rutile structure of SnO2 with preferential orientation along (200) plane. SEM image reveals the nanocrystalline nature of the SnO2 films. SnO2 thin films were subjected to electrochemical tests to study the supercapacitor behavior. Maximum specific capacitance of 168 F/g at a scan rate of 25 mV/s was obtained using 0.5 M KOH as the electrolyte. This is the highest value ever reported for spray deposited tin oxide thin films.

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39

Pilko, V. V., and F. F. Komarov. "Structure and Tribomechanical Properties of TiZrSiN Nanostructured Thin Films Deposited by Reactive Magnetron Sputtering." Advanced Materials & Technologies, no. 1 (2018): 014–21. http://dx.doi.org/10.17277/amt.2018.01.pp.014-021.

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40

M. A. Barote, M. A. Barote. "Optical and Electrical Properties of Spray Deposited Cdo Thin Films: Effect of Substrate Temperature." International Journal of Scientific Research 2, no. 10 (June 1, 2012): 1–2. http://dx.doi.org/10.15373/22778179/oct2013/119.

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41

Almuslet, Nafie A., Yousif H. Alsheikh, and Kh M. Haroun. "Pulse Energy Effect on the Optical Properties of Pulse Laser Deposited SiO2 Thin Films." International Journal of Trend in Scientific Research and Development Volume-2, Issue-6 (October 31, 2018): 47–54. http://dx.doi.org/10.31142/ijtsrd18341.

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Dubček, P., Nenad Radić, S. Bernstorff, K. Salamon, and O. Milat. "Nanosize Structure of Sputter-Deposited Tungsten Carbide Thin Films." Solid State Phenomena 99-100 (July 2004): 251–54. http://dx.doi.org/10.4028/www.scientific.net/ssp.99-100.251.

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The structure of thin films of tungsten-carbon, deposited onto monocrystalline silicon substrates by reactive magnetron sputtering (argon + benzene) in a wide range of preparation parameters has been investigated by GISAXS. Substrates were in a fixed position relative to the two adjacent cylindrical magnetrons. Benzene partial pressure was varied from 1% to 10% of the total working gas pressure. A series of samples were prepared, with the substrate held at room temperature and 400°C, and the substrate potential held at floating potential or biased -70 V with respect to the discharge plasma. The bulk particle contribution to the scattering was investigated outside of the specular plane, applying a two dimensional CCD detector. For higher values of benzene partial pressure, the generated films consist of densely packed tungsten carbide grains in an amorphous, carbon rich matrix, while, in some cases, the lower benzene pressure resulted in isolated carbon rich particles in tungsten carbide. From earlier work it is known that the preparation parameters influence the film’s chemical composition, the relatively complex dependence of particle sizes on benzene partial pressure can be explained as a function of the relative carbon content.

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CHOWDHURY, R. I., M. A. HOSSEN, G. MUSTAFA, S. HUSSAIN, S. N. RAHMAN, S. F. U. FARHAD, K. MURATA, T. TAMBO, and A. B. M. O. ISLAM. "CHARACTERIZATION OF CHEMICALLY DEPOSITED CADMIUM SULFIDE THIN FILMS." International Journal of Modern Physics B 24, no. 30 (December 10, 2010): 5901–11. http://dx.doi.org/10.1142/s0217979210055147.

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Cadmium sulfide (CdS) thin films have been deposited on glass/conducting glass substrates using low-cost chemical bath deposition method. The deposited films have been characterized using various techniques in order to optimize growth parameters. It has been confirmed by X-ray diffraction measurement that the deposited layers are mainly consisting of CdS phase. The PEC measurements indicate that the deposited CdS layer is n-type in electrical conduction, and optical absorbance measurements show that the band gap is 2.42 eV for as-deposited film and 2.27 eV upon heat treatment for one hour in air ambient. Both atomic force microscopy and scanning electron microscopy measurements indicate the formation of pinhole free and smooth surface of CdS films of nanosized grains. The electrical resistivity is also observed in the order of 1044 Ω cm and decreases as temperature increases.

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Liao, P. C., W. S. Ho, Y. S. Huang, and K. K. Tiong. "Characterization of sputtered iridium dioxide thin films." Journal of Materials Research 13, no. 5 (May 1998): 1318–26. http://dx.doi.org/10.1557/jmr.1998.0187.

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Iridium dioxide (IrO2) thin films, deposited on Si substrates by reactive rf sputtering method under various conditions, were characterized by atomic force microscopy (AFM), x-ray diffraction (XRD), electrical-conductivity, spectrophotometry, ellipsometry and Raman scattering measurements. The average grain sizes of the films were estimated by AFM. A grain boundary scattering model was used to fit the relation between the average grain size and electrical resistivity. The optical and dielectric constants were determined by the ellipsometry measurements. The results of the electrical and optical studies show a metallic character of the films deposited at higher temperatures. The results of XRD and Raman scattering indicate that the IrO2 films deposited at temperatures higher than 300 °C show the presence of (200) texture.

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45

Choi, Gwangpyo, Guanghu Jin, Si-Hyun Park, Woonyoung Lee, and Jinseong Park. "Material and Sensing Properties of Pd-Deposited WO3 Thin Films." Journal of Nanoscience and Nanotechnology 7, no. 11 (November 1, 2007): 3841–46. http://dx.doi.org/10.1166/jnn.2007.040.

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The physicochemical and electrical properties of Pd-deposited WO3 thin films were investigated as a function of Pd thickness, annealing temperature, and operating temperature for application as a hydrogen gas sensor. WO3 thin films were deposited on an insulating material using a thermal evaporator. X-ray diffractometry (XRD), field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS) were used to evaluate the crystal structure, microstructure, surface roughness, and chemical property of the films, respectively. The deposited films grew into polycrystalline WO3 with a rhombohedral structure after annealing at 500 °C. Adding Pd had no effect on the crystallinity, but suppressed the growth of WO3 grains. The Pd was scattered as isolated small spherical particles of PdO2 on the WO3 thin film after annealing at 500 °C, while it agglomerated as irregular large particles or diffused into the WO3 after annealing at 600 °C. PdO2 reduction under H2 and reoxidation under air were dependent on both the Pd deposition thickness and annealing conditions. The WO3 thin film with a 2-nm-thick Pd deposit showed a good response and recovery to H2 gas at a 250 °C operating temperature.

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46

Deepa, M., A. K. Srivastava, S. Singh, and S. A. Agnihotry. "Structure–property correlation of nanostructured WO3 thin films produced by electrodeposition." Journal of Materials Research 19, no. 9 (September 2004): 2576–85. http://dx.doi.org/10.1557/jmr.2004.0336.

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Nanocrystalline tungsten oxide (WO3) films were electrodeposited potentiostatically at room temperature on transparent conducting substrates from an ethanolic solution of acetylated peroxotungstic acid prepared from a wet chemistry process. The changes that occur in the microstructure and the grain size of the as-deposited WO3 films as a function of annealing temperature are simultaneously accompanied by a continually varying electrochromic performance. X-ray diffraction studies revealed the transformation of a nanocrystalline as-deposited WO3 film into a highly crystalline triclinic WO3 as the annealing temperature was raised from room temperature to 500 °C. The microstructural evolution with the increasing annealing temperature of the as-deposited film was further exemplified by transmission electron microscopy (TEM) studies. While the as-deposited film was composed of uniformly distributed ultra fine nanograins, the most noticeable feature seen in these films annealed at 250 °C was the presence of open channels which are believed to promote lithium ion motion. Films annealed at 400 °C exhibited coarse grains with prominent grain boundaries that hinder lithium ion movement, which in turn reduces the film’s ion insertion capacity. In concordance with the TEM results, the 250 °C film had the highest ion storage capacity as it exhibited a charge density of 67.4 mC cm−2 μm−1. The effect of microstructure was also reflected in the high transmission modulation (64%) and coloration efficiency (118 cm2 C−1) of the 250 °C film at 632.8 nm. Contrary to the superior electrochromic performance of the 250 °C film, the optical switching speeds between the colored and bleached states of the as-deposited WO3 film declined considerably as a function of annealing temperature. Also, the diffusion coefficient for lithium ions was greater by at least an order of magnitude for the as-deposited film as compared to the 250 and 500 °C films. In this report, the influence of microstructural changes that are brought about by the annealing of the as-deposited WO3 films on their coloration-bleaching dynamics is evaluated in terms of their structural, electrochromic, and electrochemical properties.

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MOLLA, M. Z., M. R. I. CHOWDHURY, G. MUSTAFA, S. HUSSAIN, K. S. HOSSAIN, S. N. RAHMAN, N. KHATUN, et al. "CHARACTERIZATION OF CHEMICALLY-DEPOSITED SILVER SULFIDE THIN FILMS." International Journal of Modern Physics B 23, no. 30 (December 10, 2009): 5695–704. http://dx.doi.org/10.1142/s0217979209054429.

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Ag 2 S thin films have been deposited onto fluorinated tin oxide (FTO)-coated conducting glass substrates using chemical bath deposition (CBD) method. Photoelectrochemical (PEC) cell, optical properties, surface morphology, structural properties, compositional analysis and electrical properties of Ag 2 S thin films have been investigated. The PEC measurements indicate that the deposited Ag 2 S layers are n-type in electrical conduction. The transmittance of deposited layer is obtained to be about 13–87%. The absorbance of the films is found to decrease with increasing wavelength. The band gap of the Ag 2 S thin film is estimated to be 1.8 eV. It is observed from scanning electron microscopy (SEM) and atomic force microscopy (AFM) measurements that the substrates are well-covered with the deposited Ag 2 S layers without cracks and pinholes. The grain size of Ag 2 S thin films is estimated from SEM measurements to be in the range 100–210 nm. The mean roughness of Ag 2 S films is found from AFM measurements to be in the range 7.20–15 nm. X-ray diffraction shows that the films are well-crystallized and the deposited layers are mainly consisting of Ag 2 S phase with (-103) preferential plane. EDX analysis shows that a nearly stoichiometric composition of Ag 2 S is obtained. The resistivity is estimated to be in the range 3.5–7.0 Ω-cm.

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48

Takeda, Yasuhiko, Tomoyoshi Motohiro, and Shoji Noda. "Microstructures of obliquely deposited thin films. (II)." Journal of the Japan Society of Powder and Powder Metallurgy 37, no. 7 (1990): 1101–3. http://dx.doi.org/10.2497/jjspm.37.1101.

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49

Watanabe, Yosihide, Yasuhiko Takeda, Tomoyoshi Motohiro, and Shoji Noda. "Microstructures of obliquely deposited thin films (III)." Journal of the Japan Society of Powder and Powder Metallurgy 38, no. 3 (1991): 345–47. http://dx.doi.org/10.2497/jjspm.38.345.

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50

Fionova, L. K., O. V. Kononenko, and V. N. Matveev. "Grain Boundaries in Deposited Aluminum Thin Films." Materials Science Forum 126-128 (January 1993): 415–18. http://dx.doi.org/10.4028/www.scientific.net/msf.126-128.415.

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Journal articles on the topic 'Deposited thin films'

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