Journal articles on the topic 'Delta doping'
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Gossmann, H. J., and E. F. Schubert. "Delta doping in silicon." Critical Reviews in Solid State and Materials Sciences 18, no. 1 (January 1993): 1–67. http://dx.doi.org/10.1080/10408439308243415.
Full textKulbachinskii, V. A., V. G. Kytin, R. A. Lunin, A. V. Golikov, V. G. Mokerov, A. S. Bugaev, A. P. Senichkin, R. T. F. van Schaijk, A. de Visser, and P. M. Koenraad. "Sn delta-doping in GaAs." Semiconductor Science and Technology 14, no. 12 (November 8, 1999): 1034–41. http://dx.doi.org/10.1088/0268-1242/14/12/304.
Full textBénière, François, René Chaplain, Marcel Gauneau, Viswanatha Reddy, and André Régrény. "Delta-doping in diffusion studies." Journal de Physique III 3, no. 12 (December 1993): 2165–71. http://dx.doi.org/10.1051/jp3:1993259.
Full textZeindl, H. P., E. Hammerl, W. Kiunke, and I. Eisele. "Delta doping superlattices in silicon." Journal of Electronic Materials 19, no. 10 (October 1990): 1119–22. http://dx.doi.org/10.1007/bf02651991.
Full textKim, Jong-Hee, Gye Mo Yang, Sung Chul Choi, Ji Youn Choi, Hyun Kyung Cho, Kee Young Lim, and Hyung Jae Lee. "Si Delta Doped GaN Grown by Low-Pressure Metalorganic Chemical Vapor Deposition." MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 305–9. http://dx.doi.org/10.1557/s1092578300002635.
Full textSchubert, E. F., and R. F. Kopf. "Delta-Doping in III-V Semiconductors." Materials Science Forum 65-66 (January 1991): 53–66. http://dx.doi.org/10.4028/www.scientific.net/msf.65-66.53.
Full textEisele, I. "Delta-type doping profiles in silicon." Applied Surface Science 36, no. 1-4 (January 1989): 39–51. http://dx.doi.org/10.1016/0169-4332(89)90897-0.
Full textZagwijn, P. M., Y. N. Erokhin, W. F. J. Slijkerman, J. F. van der Veen, G. F. A. van de Walle, D. J. Gravesteijn, and A. A. van Gorkum. "Ga delta‐doping layers in silicon." Applied Physics Letters 59, no. 12 (September 16, 1991): 1461–63. http://dx.doi.org/10.1063/1.105288.
Full textZervos, Matthew. "Delta(δ)-doping of semiconductor nanowires." physica status solidi (RRL) - Rapid Research Letters 7, no. 9 (July 1, 2013): 651–54. http://dx.doi.org/10.1002/pssr.201307219.
Full textButler, James E., Anatoly Vikharev, Alexei Gorbachev, Mikhail Lobaev, Anatoly Muchnikov, Dmitry Radischev, Vladimir Isaev, et al. "Nanometric diamond delta doping with boron." physica status solidi (RRL) - Rapid Research Letters 11, no. 1 (December 7, 2016): 1600329. http://dx.doi.org/10.1002/pssr.201600329.
Full textLiu, Wen-Chau, and Chung-Yih Sun. "Properties of Sawtooth-Doping Superlattice with Different Delta-Doping Densities." Japanese Journal of Applied Physics 30, Part 1, No. 4 (April 15, 1991): 635–36. http://dx.doi.org/10.1143/jjap.30.635.
Full textCai, Yan, and Jurgen Michel. "High n-Type Doping in Ge for Optical Gain and Lasing." Solid State Phenomena 205-206 (October 2013): 394–99. http://dx.doi.org/10.4028/www.scientific.net/ssp.205-206.394.
Full textYarn, K. F. "MOCVD-Grown InGa/GaAs Emitter Delta Doping Heterojunction Bipolar Transistors." Active and Passive Electronic Components 25, no. 3 (2002): 239–43. http://dx.doi.org/10.1080/08827510213499.
Full textHenry, Anne, L. Storasta, and Erik Janzén. "Nitrogen Delta Doping in 4H-SiC Epilayers." Materials Science Forum 433-436 (September 2003): 153–56. http://dx.doi.org/10.4028/www.scientific.net/msf.433-436.153.
Full textHart, L., B. R. Davidson, J. M. Fernández, R. C. Newman, and C. C. Button. "Carbon Delta-Doping In GaAs and AlAs." Materials Science Forum 196-201 (November 1995): 409–14. http://dx.doi.org/10.4028/www.scientific.net/msf.196-201.409.
Full textTribuzy, C. V. B., S. M. Landi, M. P. Pires, R. Butendeich, P. L. Souza, A. C. Bittencourt, G. E. Marques, and A. B. Henriques. "nipi delta-doping superlattices for amplitude modulation." Brazilian Journal of Physics 32, no. 2a (June 2002): 269–74. http://dx.doi.org/10.1590/s0103-97332002000200006.
Full textTribuzy, C. V. B., P. L. Souza, S. M. Landi, M. P. Pires, R. Butendeich, A. C. Bittencourt, G. E. Marques, and A. B. Henriques. "Delta-doping superlattices in multiple quantum wells." Physica E: Low-dimensional Systems and Nanostructures 11, no. 2-3 (October 2001): 261–67. http://dx.doi.org/10.1016/s1386-9477(01)00215-6.
Full textJorke, H., and H. Kibbel. "Boron delta doping in Si and Si0.8Ge0.2layers." Applied Physics Letters 57, no. 17 (October 22, 1990): 1763–65. http://dx.doi.org/10.1063/1.104060.
Full textWinking, L., M. Wenderoth, T. C. G. Reusch, R. G. Ulbrich, P. J. Wilbrandt, R. Kirchheim, S. Malzer, and G. Döhler. "Ideal delta doping of carbon in GaAs." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 23, no. 1 (2005): 267. http://dx.doi.org/10.1116/1.1856465.
Full textCerniansky, M., D. W. E. Allsopp, and M. Hopkinson. "Delta-doping-enhanced InGaAs/InAlAs heterobarrier diodes." Electronics Letters 31, no. 6 (March 16, 1995): 493–94. http://dx.doi.org/10.1049/el:19950314.
Full textMattey, N. L., M. Hopkinson, R. F. Houghton, M. G. Dowsett, D. S. McPhail, T. E. Whall, E. H. C. Parker, G. R. Booker, and J. Whitehurst. "P-type delta doping in silicon MBE." Thin Solid Films 184, no. 1-2 (January 1990): 15–19. http://dx.doi.org/10.1016/0040-6090(90)90392-q.
Full textKang, In Ho, Wook Bahng, Sang Cheol Kim, Sung Jae Joo, and Nam Kyun Kim. "Numerical Investigation of the DC and RF Performances for a 4H-SiC Double Delta-Doped Channel MESFET Having Various Delta-Doping Concentrations." Materials Science Forum 556-557 (September 2007): 823–26. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.823.
Full textWang, Ke-Fan, Yongxian Gu, Xiaoguang Yang, Tao Yang, and Zhanguo Wang. "Si delta doping inside InAs/GaAs quantum dots with different doping densities." Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 30, no. 4 (July 2012): 041808. http://dx.doi.org/10.1116/1.4732462.
Full textKhusyainov, D. I., C. Dekeyser, A. M. Buryakov, E. D. Mishina, G. B. Galiev, E. A. Klimov, S. S. Pushkarev, and A. N. Klochkov. "Ultrafast carrier dynamics in LT-GaAs doped with Si delta layers." International Journal of Modern Physics B 31, no. 27 (October 24, 2017): 1750195. http://dx.doi.org/10.1142/s0217979217501958.
Full textNikiforov, Alexander I., B. Z. Kanter, S. I. Stenin, and S. V. Rubanov. "Sb Delta-Type Doping in Si-MBE Superlattices." Materials Science Forum 69 (January 1991): 17–20. http://dx.doi.org/10.4028/www.scientific.net/msf.69.17.
Full textAkhavan, Nima Dehdashti, Gilberto Armando Umana-Membreno, Renjie Gu, Jarek Antoszewski, and Lorenzo Faraone. "Delta Doping in HgCdTe-Based Unipolar Barrier Photodetectors." IEEE Transactions on Electron Devices 65, no. 10 (October 2018): 4340–45. http://dx.doi.org/10.1109/ted.2018.2861378.
Full textYokogawa, Toshiya, Kunimasa Takahashi, Takeshi Uenoyama, Osamu Kusumoto, Masao Uchida, and Makoto Kitabatake. "Nitrogen delta doping in 6H silicon carbide layers." Journal of Applied Physics 89, no. 3 (2001): 1794. http://dx.doi.org/10.1063/1.1337937.
Full textCao, X. A., X. M. Li, S. Li, and L. Y. Liu. "Conductivity Enhancement in Organic Electronics by Delta Doping." IEEE Electron Device Letters 37, no. 12 (December 2016): 1628–31. http://dx.doi.org/10.1109/led.2016.2620184.
Full textPolly, Stephen J., David V. Forbes, Kristina Driscoll, Staffan Hellstrom, and Seth M. Hubbard. "Delta-Doping Effects on Quantum-Dot Solar Cells." IEEE Journal of Photovoltaics 4, no. 4 (July 2014): 1079–85. http://dx.doi.org/10.1109/jphotov.2014.2316677.
Full textBöer, K. W., and J. Piprek. "Inverse delta doping for improvement of solar cells." Journal of Applied Physics 75, no. 10 (May 15, 1994): 5095–101. http://dx.doi.org/10.1063/1.355753.
Full textAreiza, M. C. L., C. V. B. Tribuzy, S. M. Landi, M. P. Pires, and P. L. Souza. "Amplitude Modulators containing an nipi delta doping superlattice." IEEE Photonics Technology Letters 17, no. 10 (October 2005): 2071–73. http://dx.doi.org/10.1109/lpt.2005.854415.
Full textZagwijn, P. M., J. F. van der Veen, E. Vlieg, A. H. Reader, and D. J. Gravesteijn. "A solution of the doping problem for Ga delta‐doping layers in Si." Journal of Applied Physics 78, no. 8 (October 15, 1995): 4933–38. http://dx.doi.org/10.1063/1.359782.
Full textZehe, Alfred, Eusebio Torres Tapia, and Araceli Ramírez. "A METHOD OF MEASURING THERMAL STABILITY IN DELTA-DOPING." Revista de Investigación de Física 8, no. 02 (December 30, 2005): 19–25. http://dx.doi.org/10.15381/rif.v8i02.8550.
Full textZhao, Ying, Shengrui Xu, Hongchang Tao, Yachao Zhang, Chunfu Zhang, Lansheng Feng, Ruoshi Peng, et al. "Enhanced P-Type GaN Conductivity by Mg Delta Doped AlGaN/GaN Superlattice Structure." Materials 14, no. 1 (December 31, 2020): 144. http://dx.doi.org/10.3390/ma14010144.
Full textHenning, J. C. M., Y. A. R. R. Kessener, Paul M. Koenraad, M. R. Leys, W. C. van der Vleuten, J. H. Wolter, and A. M. Frens. "Luminescence of a Delta Doping Related Exciton in GaAs:Si." Materials Science Forum 143-147 (October 1993): 653–56. http://dx.doi.org/10.4028/www.scientific.net/msf.143-147.653.
Full textRosenberg, R. A., S. P. Frigo, Sunwoo Lee, and P. A. Dowben. "Selective area, synchrotron radiation induced, delta doping of silicon." Journal of Applied Physics 71, no. 10 (May 15, 1992): 4795–98. http://dx.doi.org/10.1063/1.350619.
Full textJoyce, T. B., T. J. Bullough, T. Farrell, B. R. Davidson, D. E. Sykes, and A. Chew. "Carbon delta doping in chemical beam epitaxy using CBr4." Journal of Crystal Growth 175-176 (May 1997): 377–82. http://dx.doi.org/10.1016/s0022-0248(96)00957-8.
Full textSu, Yan Kuin, Ruey Lue Wang, and Yeong Her Wang. "Negative Differential Resistance in GaAs Delta-Doping Tunneling Diodes." Japanese Journal of Applied Physics 30, Part 2, No. 2B (February 15, 1991): L292—L294. http://dx.doi.org/10.1143/jjap.30.l292.
Full textBayram, C., J. L. Pau, R. McClintock, and M. Razeghi. "Delta-doping optimization for high quality p-type GaN." Journal of Applied Physics 104, no. 8 (October 15, 2008): 083512. http://dx.doi.org/10.1063/1.3000564.
Full textKozuka, Y., M. Kim, H. Ohta, Y. Hikita, C. Bell, and H. Y. Hwang. "Enhancing the electron mobility via delta-doping in SrTiO3." Applied Physics Letters 97, no. 22 (November 29, 2010): 222115. http://dx.doi.org/10.1063/1.3524198.
Full textKim, K. H., J. Li, S. X. Jin, J. Y. Lin, and H. X. Jiang. "III-nitride ultraviolet light-emitting diodes with delta doping." Applied Physics Letters 83, no. 3 (July 21, 2003): 566–68. http://dx.doi.org/10.1063/1.1593212.
Full textYoung, P. G., R. A. Mena, S. A. Alterovitz, S. E. Schacham, and E. J. Haugland. "Temperature independent quantum well FET with delta channel doping." Electronics Letters 28, no. 14 (1992): 1352. http://dx.doi.org/10.1049/el:19920858.
Full textMuller, F., F. Koch, and A. Kohl. "IR detection using subband absorption in delta -doping layers." Semiconductor Science and Technology 6, no. 12C (December 1, 1991): C133—C136. http://dx.doi.org/10.1088/0268-1242/6/12c/028.
Full textOhno, Kenichi, F. Joseph Heremans, Lee C. Bassett, Bryan A. Myers, David M. Toyli, Ania C. Bleszynski Jayich, Christopher J. Palmstrøm, and David D. Awschalom. "Engineering shallow spins in diamond with nitrogen delta-doping." Applied Physics Letters 101, no. 8 (August 20, 2012): 082413. http://dx.doi.org/10.1063/1.4748280.
Full textYanagisawa, Kohei, Suguru Takeuchi, Hirosi Yoshitake, Koji Onomitsu, and Yosizi Horikoshi. "Enhanced magnetization by modulated Mn delta doping in GaAs." Journal of Crystal Growth 301-302 (April 2007): 634–37. http://dx.doi.org/10.1016/j.jcrysgro.2006.12.001.
Full textWang, Xiaohui, and Yijun Zhang. "Negative electron affinity GaN photocathode with Mg delta-doping." Optik 168 (September 2018): 278–81. http://dx.doi.org/10.1016/j.ijleo.2018.04.112.
Full textZhang, Yanchao, Li Yue, Xiren Chen, Jun Shao, Xin Ou, and Shumin Wang. "Wavelength extension in GaSbBi quantum wells using delta-doping." Journal of Alloys and Compounds 744 (May 2018): 667–71. http://dx.doi.org/10.1016/j.jallcom.2018.02.027.
Full textChen, Yingda, Hualong Wu, Guanglong Yue, Zimin Chen, Zhiyuan Zheng, Zhisheng Wu, Gang Wang, and Hao Jiang. "Enhanced Mg Doping Efficiency in P-Type GaN by Indium-Surfactant-Assisted Delta Doping Method." Applied Physics Express 6, no. 4 (April 1, 2013): 041001. http://dx.doi.org/10.7567/apex.6.041001.
Full textGuo, S. P., W. Lin, X. Zhou, M. C. Tamargo, C. Tian, I. Kuskovsky, and G. F. Neumark. "Highp-type doping of ZnBeSe using a modified delta-doping technique with N and Te." Journal of Applied Physics 90, no. 4 (August 15, 2001): 1725–29. http://dx.doi.org/10.1063/1.1384863.
Full textHorsfall, Alton B., C. H. A. Prentice, Peter Tappin, Praneet Bhatnagar, Nicolas G. Wright, Konstantin Vassilevski, and Irina P. Nikitina. "Optimisation of 4H-SiC MOSFET Structures for Logic Applications." Materials Science Forum 527-529 (October 2006): 1325–28. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1325.
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