Academic literature on the topic 'Delta doping'
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Journal articles on the topic "Delta doping"
Gossmann, H. J., and E. F. Schubert. "Delta doping in silicon." Critical Reviews in Solid State and Materials Sciences 18, no. 1 (January 1993): 1–67. http://dx.doi.org/10.1080/10408439308243415.
Full textKulbachinskii, V. A., V. G. Kytin, R. A. Lunin, A. V. Golikov, V. G. Mokerov, A. S. Bugaev, A. P. Senichkin, R. T. F. van Schaijk, A. de Visser, and P. M. Koenraad. "Sn delta-doping in GaAs." Semiconductor Science and Technology 14, no. 12 (November 8, 1999): 1034–41. http://dx.doi.org/10.1088/0268-1242/14/12/304.
Full textBénière, François, René Chaplain, Marcel Gauneau, Viswanatha Reddy, and André Régrény. "Delta-doping in diffusion studies." Journal de Physique III 3, no. 12 (December 1993): 2165–71. http://dx.doi.org/10.1051/jp3:1993259.
Full textZeindl, H. P., E. Hammerl, W. Kiunke, and I. Eisele. "Delta doping superlattices in silicon." Journal of Electronic Materials 19, no. 10 (October 1990): 1119–22. http://dx.doi.org/10.1007/bf02651991.
Full textKim, Jong-Hee, Gye Mo Yang, Sung Chul Choi, Ji Youn Choi, Hyun Kyung Cho, Kee Young Lim, and Hyung Jae Lee. "Si Delta Doped GaN Grown by Low-Pressure Metalorganic Chemical Vapor Deposition." MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 305–9. http://dx.doi.org/10.1557/s1092578300002635.
Full textSchubert, E. F., and R. F. Kopf. "Delta-Doping in III-V Semiconductors." Materials Science Forum 65-66 (January 1991): 53–66. http://dx.doi.org/10.4028/www.scientific.net/msf.65-66.53.
Full textEisele, I. "Delta-type doping profiles in silicon." Applied Surface Science 36, no. 1-4 (January 1989): 39–51. http://dx.doi.org/10.1016/0169-4332(89)90897-0.
Full textZagwijn, P. M., Y. N. Erokhin, W. F. J. Slijkerman, J. F. van der Veen, G. F. A. van de Walle, D. J. Gravesteijn, and A. A. van Gorkum. "Ga delta‐doping layers in silicon." Applied Physics Letters 59, no. 12 (September 16, 1991): 1461–63. http://dx.doi.org/10.1063/1.105288.
Full textZervos, Matthew. "Delta(δ)-doping of semiconductor nanowires." physica status solidi (RRL) - Rapid Research Letters 7, no. 9 (July 1, 2013): 651–54. http://dx.doi.org/10.1002/pssr.201307219.
Full textButler, James E., Anatoly Vikharev, Alexei Gorbachev, Mikhail Lobaev, Anatoly Muchnikov, Dmitry Radischev, Vladimir Isaev, et al. "Nanometric diamond delta doping with boron." physica status solidi (RRL) - Rapid Research Letters 11, no. 1 (December 7, 2016): 1600329. http://dx.doi.org/10.1002/pssr.201600329.
Full textDissertations / Theses on the topic "Delta doping"
Dewdney, Andrew James. "The optical properties of delta doping GaAs based superlattices and heterostructures." Thesis, Imperial College London, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.244658.
Full textSipahi, Guilherme Matos. "Teoria do Confinamento de Buracos em Heteroestruturas Semicondutoras do Tipo Delta-doping." Universidade de São Paulo, 1997. http://www.teses.usp.br/teses/disponiveis/43/43133/tde-31082012-132038/.
Full textp-type ro-doping quantum wells and superlattices are semiconductor systems of considerable interest for basic research and device applications. In this work, a method for calculating potentials and band structures of such systems is developed. The method relies on a plane wave expansion of the multiband effective mass equation, uses kinetic energy matrices of any size, and takes exchange correlation into account in a more rigorous way than this was done before. The method is used to calculate potential profiles, subband and miniband structures as well as Fermi level positions for a series of p-type delta-doping quantum wells and superlattices. The differences between n- and p-type delta-doping structures are studied. In addition to this we developed a procedure within this method to ca1culate photoluminescence (PL) spectra of the wells studied. It depends on the oscillator strength between the holes inside the wells and the free electrons on the conduction band. We use this procedure to calculate envelope functions, overlap integrals and direct and indirect transitions spectra. Finally, we compare our theoretical calculations of PL spectra with experimental results extracted from the literature.
Lima, Washington Luiz Carvalho. "Estrutura eletrônica em sistemas com dopagem tipo Delta." Universidade de São Paulo, 1992. http://www.teses.usp.br/teses/disponiveis/54/54131/tde-14012009-110206/.
Full textIn this work we have studied the electronic proprieties of a system with planar doping or δ-doping. We have solved the Schrodinger and Poisson equations self-consistently in the Hatree approximation for several conditions with or without external magnetic or electric fields. In order to solve Schrodinger equation we have employed the split operator technique. The effective potential, the energy levels and the electronic density was calculated as a function of temperature, donor density and donor diffusion width. With external magnetic field applied perpendicular to the donors plane it is shown that the sub-bands energies are not altered for fields in the range of 0 to 20T. With magnetic fields applied parallel to the donors plane we have observed that the energy levels are shifted to higher energies and a depopulation of the excited levels occur, also an enhancement of the electron effective mass is found. With an electric field applied to the system we have calculated the sub-bands energy levels, the electron concentration, the polarization, and the capacitance as a function of the gate voltage, donor density and the position of the donor plane. Our results for the capacitance agree qualitatively quite well with recent experimental data.
Boyce, Brent R. "Carrier doping studies of pure and Ni substituted YBa?Cu?O?-[delta] thin films /." The Ohio State University, 2000. http://rave.ohiolink.edu/etdc/view?acc_num=osu1488195154357746.
Full textHiggins, Joshua Scott. "Disorder and doping in the oxygenated electron-doped superconductor Pr₂₋[x]Ce[x]CuO₄±[4-delta]." College Park, Md. : University of Maryland, 2006. http://hdl.handle.net/1903/4064.
Full textThesis research directed by: Physics. Title from t.p. of PDF. Includes bibliographical references. Published by UMI Dissertation Services, Ann Arbor, Mich. Also available in paper.
Wilson, Stephen Peter. "One-dimensional modelling of pseudomorphic semiconductor heterostructures with applications to capacitance-voltage profililng and #delta#-doping." Thesis, University of York, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.306565.
Full textHerval, Leonilson Kiyoshi Sato de. "Propriedades magneto-óticas e de magneto-transporte de um diodo de tunelamento ressonante contendo Si δ - doping no poço quântico." Universidade Federal de São Carlos, 2011. https://repositorio.ufscar.br/handle/ufscar/5031.
Full textUniversidade Federal de Sao Carlos
In this work, we have studied the transport and optical properties of GaAs = AlGaAs resonant tunneling diodes with Si delta-doping at the center of the quantum well. We have studied magneto-transport and polarized resolved photoluminescence from GaAs quantum well and contact layers as a function of applied voltage and magnetic _eld parallel to the tunnel current. Three resonant peaks are observed in the current-voltage characteristics curve and are associated to the resonant tunneling through the bound state of a shallow donor impurity in the quantum well (donor-assisted resonant tunneling), the electron resonant tunneling through the _rst con_ned state in the quantum well and the phonon-assisted tunneling. The contact layer and the quantum well emissions were investigated as a function of applied bias at 15 T. The optical emission from GaAs contact layers shows evidence of highly spin polarized two-dimensional electron (2DEG) and hole (2DHG) gases which a_ects the spin polarization of carriers in the QW. The quantum well (QW) photoluminescence presents strong circular polarization with values up to 85% in 15 T at low applied voltages (at the donor assisted resonant tunneling condition) and for low laser intensities. Our results may be interesting for the developing of new voltage-controlled spintronics devices.
Neste trabalho, realizamos um estudo sistemático das propriedade óticas e de transporte de um diodo de tunelamento ressonante GaAs = AlGaAs com delta-doping de Silício no centro do poço quântico. Realizamos medidas das curvas características corrente tensão e da fotoluminescência resolvida em polarização em função da voltagem e do campo magnético aplicado na direção paralela à corrente túnel. Foram observados três picos na curva característica de corrente-tensão, que foram associados ao tunelamento ressonante através de estados ligados de impurezas doadoras no poço quântico (tunelamento ressonante assistido por impurezas doadoras), tunelamento ressonante do elétron através do primeiro estado con_nado no poço quântico e ao tunelamento assistido por emissão de fônons óticos. Observamos sinal de fotoluminescência associado à emissão em diferentes camadas da amostra incluindo o poço quântico de GaAs e as camadas de contato com intensidades sensíveis à voltagem aplicada ao diodo. A emissão das camadas do contato e do poço quântico em função da voltagem foi investigada para diferentes valores de campo magnético. Na ausência de campo magnético, observamos uma emissão dependente da voltagem, que foi associada à recombinação indireta de buracos do gás bidimensional de buracos que se formam próxima à barreira e elétrons livres. Uma nova emissão dependente da voltagem aplicada foi observada na presença de campo magnético e foi associada à recombinação de elétrons do gás bidimensional de elétrons que é formada próxima à barreira emissora com buracos livres. Observamos que tais emissões, associadas aos gases bidimensionais, são altamente polarizadas e podem contribuir de forma signi_cativa para polarização de spin na região do poço quântico. Observamos também um alto grau de polarização de spin do poço quântico com valores de até 85% em 15 T em baixa voltagem (condição em que há o tunelamento ressonante assistido por impurezas doadoras) e em baixa intensidade do laser. Foi realizado também um breve estudo do comportamento das i ii emissões com a variação do campo magnético e da potência de luz aplicada. De forma geral, nossos resultados podem ser interessantes para o desenvolvimento de dispositivos spintrônicos controlados por voltagem
Chicot, Gauthier. "Effet de champs dans le diamant dopé au bore." Phd thesis, Université de Grenoble, 2013. http://tel.archives-ouvertes.fr/tel-01062250.
Full textFiori, Alexandre. "Nouvelles générations de structures en diamant dopé au bore par technique de delta-dopage pour l'électronique de puissance : croissance par CVD et caractérisation." Phd thesis, Université de Grenoble, 2012. http://tel.archives-ouvertes.fr/tel-00967208.
Full textCabral, Erika Dias. "Estudos de propriedades elétricas e magnéticas em nanoestruturas de GaMnAs de uso em spintrônica." Universidade do Estado do Rio de Janeiro, 2009. http://www.bdtd.uerj.br/tde_busca/arquivo.php?codArquivo=1462.
Full textConselho Nacional de Desenvolvimento Científico e Tecnológico
Um estudo da interação entre desordem e polarização de spin no GaMnAs ajuda a compreender a natureza dos estados, estendidos ou localizados, bem como as consequências para as transições observadas sobre as propriedades de transporte e às mudanças na ordem magnética de momentos magnéticos localizados em sítios de Mn. Este estudo pressupõe a ocorrência de uma banda impureza com baixas concentrações de Mn, que merge na banda valência no caso de concentrações mais elevadas. A abordagem teórica, baseada em um formalismo de espalhamento múltiplo auto-consistente, através do cálculo da função de Green para buracos determina-se a função densidade espectral no nível de Fermi. A escolha de uma figura de mérito, com base na largura e sobre a posição do máximo da função densidade espectral no espaço recíproco, leva a um diagrama de fase que determina o caráter metálicos ou não metálicos da amostra. Também é possível identificar a mobility edge, e como consequência, a densidade efetiva de portadores livre. Uma amostra é definida pelo par de parâmetros independentes, a concentração de Mn e a densidade buraco. As melhores amostras, aquelas com os maiores valores de mérito, tem uma relação entre a densidade de buracos estendidos e a concentração de Mn aproximadamente de 0.3, muito próximo do raio de 10-25% observada entre as amostras reais produzidos com a mais alta temperatura de transição. Além disso, a relação entre essas concentrações de Mn correspondente as transições metal-não-metal e não-metal-metal que é de aproximadamente 2.4, muito próximo do valor 2.1 da amostras reais. Uma interpretação da ocorrência de ferromagnetismo com alta temperatura de transição em GaMnAs é dada como uma consequência da interação entre o mecanismo de interação assistido por estados localizados e interações indiretas assistida pelo estdos buraco estendidos. Portadores mediando magnetismo em semicondutores mostram diferenças importantes e potencialmente úteis a diferenças de magnetismo em metais tais como o luz- ou voltagem elétrica -controlando ferromagnetismo. Motivado por experiências reportadas em poços quânticos de GaAs com uma dopagem delta de Mn com altas temperaturas Currier (temperatura de transição) mais elevadas do que em bulk de (Ga, Mn)As, nós exploramos teoricamente a viabilidade do campo elétrico controlar ferromagnetismo em poços quânticos. Nós calculamos auto-consistentemente a interação de troca indireta em Mn-Mn íons e aplicamos a simulação Monte Carlo para encontrar transição temperatura Tc. A nossa abordagem permite-nos estudar sistematicamente os efeitos de confinamento quântico e da posição da camada magnética de Mn e Tc, que vai além da aproximação do campo médio. Nós comparamos nossos resultados com os resultados experimentais e sugerimos caminho para o melhor controle do ferromagnetismo.
A study of the interplay between disorder and spin polarization in the diluted magnetic semiconductor GaMnAs helps to understand the character of states, extended or localized. This study assumes the occurrence of an impurity band which merges into the valence band at higher concentrations. The theoretical approach, based on a self-consistent multiple scattering formalism, determines the spectral density function at the Fermi level from the calculation of the hole's Green's functions. A choice of a figure of merit, based on the width and on the position of the maximum of the spectral density function in the reciprocal space, leads to a phase diagram determining the metallic or non-metallic character of the sample. It is also possible to identify mobility edges and, in consequence, the density of effectively free carriers. A model sample is defined by the pair of independent parameters, Mn concentration and hole density. The best samples, those with the highest figures of merit, have a ratio between the extended hole density and the Mn concentration near 0.3, very close to ratio of 10-30% observed among the real samples produced with the highest transition temperatures. Also, the ratio between those Mn concentrations corresponding to the metal-to-non-metal and non-metal-to-metal transitions is approximately 2.4, very close to the value 2.1 inferred from the real samples. An interpretation of the occurrence of high transition temperature ferromagnetism in GaM-nAs is given as a consequence of the interplay between interaction mechanism assisted by localized states and indirect interactions assisted by extended hole states. Carrier mediated magnetism in semiconductors show important and potentially useful differences from magnetism in metals,such as light- or bias-controlled ferromagnetism. Motivated by experiments reporting higher Currier temperatures in GaAs quantum wells with Mn-delta doping than the ones observed in bulk (Ga,Mn)As, we explore theoretically the feasibility of bias-controlled ferromagnetism these systems. We calculate self-consistently indirect Mn-Mn exchange interaction, and apply Monte Carlo approach to find transition temperature Tc. Our approach allows us to systematically study the eects of quantum confinement and the position of Mn layer on magnetic ordering and Tc, beyond mean field approximation. We compare our findings with the experimental results and suggest paths toward improving the control of ferromagnetism.
Books on the topic "Delta doping"
Bottari, Carlo. La tutela della salute nelle attività motorie e sportive: Doping e problematiche giuridiche. Santarcangelo di Romagna (Rimini): Maggioli, 2004.
Find full textFred, Schubert E., ed. Delta-doping of semiconductors. Cambridge: Cambridge University Press, 1996.
Find full textSchubert, E. F. Delta-doping of Semiconductors. Cambridge University Press, 2005.
Find full textBook chapters on the topic "Delta doping"
Kang, In Ho, Wook Bahng, Sang Cheol Kim, Sung Jae Joo, and Nam Kyun Kim. "Numerical Investigation of the DC and RF Performances for a 4H-SiC Double Delta-Doped Channel MESFET Having Various Delta-Doping Concentrations." In Materials Science Forum, 823–26. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-442-1.823.
Full textDas, Bhaskar, J. Schulze, and Udayan Ganguly. "Effect of Delta-p Doping and i-Region Length Scaling on Ion/Ioff in Si NIPIN Diode for Selector Application." In Springer Proceedings in Physics, 671–74. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-319-97604-4_103.
Full text"Delta doping." In Doping in III-V Semiconductors, 433–81. Cambridge University Press, 1993. http://dx.doi.org/10.1017/cbo9780511599828.014.
Full textKonagai, Makoto. "Delta doping in a-Si devices." In Current Topics in Amorphous Materials, 357–62. Elsevier, 1993. http://dx.doi.org/10.1016/b978-0-444-81576-7.50056-3.
Full text"Delta Doping of InP and Related Compounds." In InP and Related Compounds, 213–62. CRC Press, 2000. http://dx.doi.org/10.1201/9781482282986-13.
Full textSchubert, E. F. "Chapter 1 Delta-Doping of Semiconductors: Electronic, Optical, and Structural Properties of Materials and Devices." In Semiconductors and Semimetals, 1–151. Elsevier, 1994. http://dx.doi.org/10.1016/s0080-8784(08)62662-9.
Full text"Silicon Carbide Delta-Doped Structures Formed by “Pulse Doping” Technique in the Vertical Hot Wall Type CVD System." In Compound Semiconductors 2001, 691–96. CRC Press, 2002. http://dx.doi.org/10.1201/9781482268980-92.
Full textNikzad, S., and M. E. Hoenk. "High-performance silicon imagers, back illumination using delta and superlattice doping, and their applications in astrophysics, medicine, and other fields." In High Performance Silicon Imaging, 473–501. Elsevier, 2020. http://dx.doi.org/10.1016/b978-0-08-102434-8.00015-5.
Full textConference papers on the topic "Delta doping"
Scappucci, Giordano. "Phosphorus delta-doping in germanium." In 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM). IEEE, 2014. http://dx.doi.org/10.1109/istdm.2014.6874623.
Full textHendriks, Peter, E. A. E. Zwaal, Jos E. M. Haverkort, and Joachim H. Wolter. "Modulation doping and delta doping of III-V compound semiconductors." In Physical Concepts of Materials for Novel Optoelectronic Device Applications, edited by Manijeh Razeghi. SPIE, 1991. http://dx.doi.org/10.1117/12.24504.
Full textKalna, K., and A. Asenov. "Multiple delta doping in aggressively scaled PHEMTs." In 31st European Solid-State Device Research Conference. IEEE, 2001. http://dx.doi.org/10.1109/essderc.2001.195265.
Full textAkazawa, Housei. "Delta-doping of boron by photo-excited CVD." In 2011 11th International Workshop on Junction Technology (IWJT). IEEE, 2011. http://dx.doi.org/10.1109/iwjt.2011.5970010.
Full textPiprek, Joachim, H. Kostial, Peter Krispin, C. H. Lange, and Karl W. Boer. "Delta doping for deep-level analysis in semiconductor diodes." In Semiconductors '92, edited by David Yevick. SPIE, 1992. http://dx.doi.org/10.1117/12.60491.
Full textSun, Yukun, Shizhao Fan, Daehwan Jung, Ryan Hool, Brian Li, Michelle Vaisman, and Minjoo Larry Lee. "Delta-doping for enhanced tunnel junction performance and thermal stability." In 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC). IEEE, 2019. http://dx.doi.org/10.1109/pvsc40753.2019.8980681.
Full textZhao, Pei, Amit Verma, Jai Verma, Huili Xing, Patrick Fay, and Debdeep Jena. "GaN heterostructure barrier diodes (HBD) with polarization-induced delta-doping." In 2013 71st Annual Device Research Conference (DRC). IEEE, 2013. http://dx.doi.org/10.1109/drc.2013.6633864.
Full textWan, Mingfang, Xingquan Liu, Xiaoshuang Chen, Wei Lu, and Shuechu Shen. "Photoreflectance spectroscopy of Si surface delta doping on GaAs (001)." In Third International Conference on Thin Film Physics and Applications, edited by Shixun Zhou, Yongling Wang, Yi-Xin Chen, and Shuzheng Mao. SPIE, 1998. http://dx.doi.org/10.1117/12.300663.
Full textZheng, Guozhen, Yayi Wei, Shaoling Guo, Dingyuan Tang, Zhenfu Peng, and Yunqiang Zhang. "Magnetoresistance oscillation of Si delta-doping GaAs multiple quantum well." In Thin Film Physics and Applications: Second International Conference, edited by Shixun Zhou, Yongling Wang, Yi-Xin Chen, and Shuzheng Mao. SPIE, 1994. http://dx.doi.org/10.1117/12.190803.
Full textTribuzy, C. V. B. "Enhanced Electroabsorption in MQW Structures Containing an nipi Delta Doping Superlattice." In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994704.
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