Books on the topic 'Defects, silicon'

Steger, Michael. Transition-Metal Defects in Silicon. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-35079-5.

Symposium, on Defects in Silicon (2nd 1991 Washington D. C. ). Proceedings of the Second Symposium on Defects in Silicon: Defects in silicon II. Pennington, NJ (10 S. Main St., Pennington 08534-2896): Electrochemical Society, 1991.

Wen, J. Process-induced defects in semiconductor silicon. Manchester: UMIST, 1996.

Yoshida, Yutaka, and Guido Langouche, eds. Defects and Impurities in Silicon Materials. Tokyo: Springer Japan, 2015. http://dx.doi.org/10.1007/978-4-431-55800-2.

Graff, Klaus. Metal impurities in silicon device fabrication. Berlin: Springer-Verlag, 1995.

Symposium A on Defect in Silicon, Hydrogen of the E-MRS Spring Conference (1998 Strasbourg, France). Defects in silicon, hydrogen: Proceedings of Symposium A on Defects in Silicon, Hydrogen of the E-MRS Spring Conference, Strasbourg, France, 16-19 June, 1998. Amsterdam: Elsevier, 1999.

International Symposium on High Purity Silicon (9th 2006 Cancún, Mexico). High purity silicon 9. Edited by Claeys Cor L, Electrochemical Society. Electronics and Photonics Division., and Electrochemical Society Meeting. Pennington, NJ: Electrochemical Society, 2006.

International, Symposium on High Purity Silicon (9th 2006 Cancún Mexico). High purity silicon 9. Pennington, NJ: Electrochemical Society, 2006.

Graff, Klaus. Metal impurities in silicon-device fabrication. Berlin: Springer-Verlag, 1995.

Pichler, Peter. Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon. Vienna: Springer Vienna, 2004. http://dx.doi.org/10.1007/978-3-7091-0597-9.

F, Kiselev V., and Mukashev B. N, eds. Defekty v kremnii i na ego poverkhnosti. Moskva: "Nauka," Glav. red. fiziko-matematicheskoĭ lit-ry, 1990.

Symposium B on Science and Technology of Defects in Silicon (1989 Strasbourg, France). Defects in silicon: Proceedings of Symposium B on Science and Technology of Defects in Silicon of the 1989 E-MRS Conference, Strasbourg, France, 30 May-2 June 1989. Amsterdam: North-Holland, 1989.

A, Borghesi, and Symposium G on Atomic Scale Characterization and Simulation of Materials and Processes (1995 : Strasbourg, France), eds. C,H,N and O in Si and characterization and simulation of materials and processes: Proceedings of Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and other Elemental Semiconductors, and Symposium G on Atomic Scale Characterization and Simulation of Materials and Processes of the 1995 E-MRS Spring Conference, Strasbourg, France, May 22-26, 1995. Amsterdam: Elsevier, 1996.

International Symposium on Defects in Silicon (3rd 1999 Seattle, Wash.). Proceedings of the Third International Symposium on Defects in Silicon. Edited by Abe T, Electrochemical Society Electronics Division, and Electrochemical Society Meeting. Pennington, NJ: Electrochemical Society, 1999.

Ying, Wang. Failure modes of silicon nitride rolling elements with ring crack defects. Poole: Bournemouth University, 2001.

International Symposium on High Purity Silicon (8th 2004 Honolulu, Hawaii). High purity silicon VIII: Proceedings of the international symposium. Edited by Claeys Cor L, Electrochemical Society Electronics Division, and Electrochemical Society Meeting. Pennington, NJ: Electrochemical Society, 2004.

T, Igamberdyev Kh. Teplofizika kremnii͡a︡. Tashkent: Izd-vo "Fan" Uzbekskoĭ SSR, 1990.

Qian, Y. Characterisation of extended defects induced by oxidation and oxygen implantation in silicon. Manchester: UMIST, 1995.

Davidson, J. A. Minority carrier processes and recombination at point and extended defects in silicon. Manchester: UMIST, 1996.

Michael, Dudley, and Materials Research Society Meeting, eds. Silicon carbide 2006--materials, processing, and devices: Symposium held April 18-20, 2006, San Francisco, California, U.S.A. Warrendale, Pa: Materials Research Society, 2006.

Steger, Michael. Transition-Metal Defects in Silicon: New Insights from Photoluminescence Studies of Highly Enriched 28Si. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013.

Tabib-Azar, Massood. Effect of crystal defects on minority carrier diffusion length in 6H SiC measured using the electron beam induced current method. [Washington, DC: National Aeronautics and Space Administration, 1997.

Dammann, Michael. Defects in silicon induced by high temperature treatment and their influence on MOS-devices: A thesis submitted to the Swiss Federal Institute of Technology Zurich for the degree of Doctor of Technical Sciences. Zurich: Physical Electronics Laboratory, Swiss Federal Institute of Technology, 1994.

International, Autumn Meeting "Gettering and Defect Engineering in Semiconductor Technology" (9th 2001 S. Tecla Italy). Proceedings of the 9th International Autumn Meeting Gettering and defect engineering in semiconductor technology: GADEST 2001, S. Tecla, Italy, September 30-October 3, 2001. Uetikon-Zürich, Switzerland: Sci-Tech Pub. Ltd., 2002.

1940-, Richter H., and Kittler M, eds. Proceedings of the 10th International Autumn Meeting Gettering and defect engineering in semiconductor technology: GADEST 2003, Seehotel Zeuthen (suburb of Berlin), State of Brandenburg, Germany, September 21-26, 2003. Uetikon-Zürich, Switzerland: SciTech Publications Ltd., 2004.

International Autumn Meeting "Gettering and Defect Engineering in Semiconductor Technology" (12th 2007 Erice, Italy). Gettering and defect engineerig in semiconductor technology XII: Gadest 2007 : proceedings of the 12th International Autumn Meeting, EMFCSC, Erice, Italy, October 14-19, 2007. Stafa-Zurich, Switzerland: Trans Tech Publications, 2008.

International Symposium on Silicon Molecular Beam Epitaxy (6th 1995 Strasbourg, France). Selected topics in group IV and II-VI semiconductors: Proceedings of Symposium L, 6th International Symposium on Silicon Molecular Beam Epitaxy, and Symposium D on Purification, Doping and Defects in II-VI Materials of the 1995 E-MRS Spring Conference, Strasbourg, France, May 22-26, 1995. Amsterdam: Elsevier, 1996.

Dąbrowski, Władysław R. Głębokie poziomy w krzemowych detektorach promieniowania jądrowego. Kraków: Akademia Górniczo-Hutnicza im. S. Staszica w Krakowie, 1990.

Stark, D. FHWA-SHRP showcase workshop on alkali-silica reactivity in highway structures: Includes SHRP products. Washington, D.C. (400 Seventh St., SW, Washington 20590): Office of Engineering and Office of Technology Applications, Federal Highway Administration, 1995.

Stark, D. FHWA-SHRP showcase workshop on alkali-silica reactivity in highway structures: Includes SHRP products. Washington, D.C. (400 Seventh St., SW, Washington 20590): Office of Engineering and Office of Technology Applications, Federal Highway Administration, 1995.

Stark, D. FHWA-SHRP showcase workshop on alkali-silica reactivity in highway structures: Includes SHRP products. Washington, D.C. (400 Seventh St., SW, Washington 20590): Office of Engineering and Office of Technology Applications, Federal Highway Administration, 1995.

United States. Federal Highway Administration and Transtec Group Inc, eds. Alkali-silica reactivity field identification handbook. Washington, D.C.]: U.S. Dept. of Transportation, Federal Highway Administration, 2011.

Wittam, E. M., and D. H. J. Totterdell. Defects in Detector Grade Silicon (Reports). AEA Technology Plc, 1988.

McCarthy, John M. Crystalline defects in silicon solar cells. 1986.

Abe, T. International Symposium on Defects in Silicon (Proceedings). Electrochemical Society, Incorporated, 1999.

(Editor), J. Weber, and A. Mesli (Editor), eds. Defects in Silicon: Hydrogen (European Materials Research Society Symposia Proceedings). Elsevier Science, 1999.

Silicon, Germanium, and Their Alloys: Growth, Defects, Impurities, and Nanocrystals. Taylor & Francis Group, 2014.

(Editor), J. Weber, and A. Mesli (Editor), eds. Defects in Silicon: Hydrogen (European Materials Research Society Symposia Proceedings). Elsevier Science, 1999.

Yoshida, Yutaka, and Guido Langouche. Defects and Impurities in Silicon Materials: An Introduction to Atomic-Level Silicon Engineering. Springer, 2016.

Velichko, Oleg. Coupled Diffusion of Impurity Atoms and Point Defects in Silicon Crystals. World Scientific Publishing UK Limited, 2019.

Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon. Vienna: Springer Vienna, 2004.

Pichler, Peter. Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon. Pichler Peter, 2012.

Friedrichs, Peter, Gerhard Pensl, Lothar Ley, and Tsunenobu Kimoto. Silicon Carbide : Volume 1: Growth, Defects, and Novel Applications. Wiley & Sons, Limited, John, 2011.

Monson, Tyrus K. An examination of point defects and atomic diffusion in silicon. 1995.

Ammerlaan, C. A. J., Symposium B. on Science and Technology of Defects in Silicon, A. Chantre, and France) European Materials Research Society Meeting (1989 Strasbourg. Defects in Silicon: Proceedings of Symposium B on Science and Technology of Defects in Silicon of the 1989 E-Mrs Conference, Strasbourg, France, 30 (European ... Research Society Symposia Proceedings, V. 9). North-Holland, 1990.

Transitionmetal Defects In Silicon New Insights From Photoluminescence Studies Of Highly. Springer-Verlag Berlin and Heidelberg GmbH &, 2013.

Graff, Klaus. Metal Impurities in Silicon-Device Fabrication. 2nd ed. Springer, 2000.

D, Jones R. Ph, North Atlantic Treaty Organization. Scientific Affairs Division., and NATO Advanced Research Workshop on Early Stages of Oxygen Precipitation in Silicon (1996 : Exeter, England), eds. Early stages of oxygen precipitation in silicon. Dordrecht: Kluwer Academic, 1996.

Pichler, Peter. Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon (Computational Microelectronics). Springer, 2004.

Fair, Richard B., Charles W. Pearce, and Jack Washburn. Impurity Diffusion and Gettering in Silicon: Volume 36. University of Cambridge ESOL Examinations, 2014.