Log in

Relevant bibliographies by topics / Defects in semiconductors / Journal articles

To see the other types of publications on this topic, follow the link: Defects in semiconductors.

Journal articles on the topic 'Defects in semiconductors'

Author: Grafiati

Published: 4 June 2021

Last updated: 15 February 2022

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the top 50 journal articles for your research on the topic 'Defects in semiconductors.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Browse journal articles on a wide variety of disciplines and organise your bibliography correctly.

1

Gösele, Ulrich M., and Teh Y. Tan. "Point Defects and Diffusion in Semiconductors." MRS Bulletin 16, no. 11 (November 1991): 42–46. http://dx.doi.org/10.1557/s0883769400055512.

Full text

Abstract:

Semiconductor devices generally contain n- and p-doped regions. Doping is accomplished by incorporating certain impurity atoms that are substitutionally dissolved on lattice sites of the semiconductor crystal. In defect terminology, dopant atoms constitute extrinsic point defects. In this sense, the whole semiconductor industry is based on controlled introduction of specific point defects. This article addresses intrinsic point defects, ones that come from the native crystal. These defects govern the diffusion processes of dopants in semiconductors. Diffusion is the most basic process associated with the introduction of dopants into semiconductors. Since silicon and gallium arsenide are the most widely used semiconductors for microelectronic and optoelectronic device applications, this article will concentrate on these two materials and comment only briefly on other semiconductors.A main technological driving force for dealing with intrinsic point defects stems from the necessity to simulate dopant diffusion processes accurately. Intrinsic point defects also play a role in critical integrated circuit fabrication processes such as ion-implantation or surface oxidation. In these processes, as well as during crystal growth, intrinsic point defects may agglomerate and negatively impact the performance of electronic or photovoltaic devices. If properly controlled, point defects and their agglomerates may also be used to accomplish positive goals such as enhancing device performance or processing yield.

APA, Harvard, Vancouver, ISO, and other styles

2

Batstone, J. L. "Structural and electronic properties of defects in semiconductors." Proceedings, annual meeting, Electron Microscopy Society of America 53 (August 13, 1995): 4–5. http://dx.doi.org/10.1017/s0424820100136398.

Full text

Abstract:

The development of growth techniques such as metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy during the last fifteen years has resulted in the growth of high quality epitaxial semiconductor thin films for the semiconductor device industry. The III-V and II-VI semiconductors exhibit a wide range of fundamental band gap energies, enabling the fabrication of sophisticated optoelectronic devices such as lasers and electroluminescent displays. However, the radiative efficiency of such devices is strongly affected by the presence of optically and electrically active defects within the epitaxial layer; thus an understanding of factors influencing the defect densities is required.Extended defects such as dislocations, twins, stacking faults and grain boundaries can occur during epitaxial growth to relieve the misfit strain that builds up. Such defects can nucleate either at surfaces or thin film/substrate interfaces and the growth and nucleation events can be determined by in situ transmission electron microscopy (TEM).

APA, Harvard, Vancouver, ISO, and other styles

3

Mehrer, Helmut. "Diffusion and Point Defects in Elemental Semiconductors." Diffusion Foundations 17 (July 2018): 1–28. http://dx.doi.org/10.4028/www.scientific.net/df.17.1.

Full text

Abstract:

Elemental semiconductors play an important role in high-technology equipment used in industry and everyday life. The first transistors were made in the 1950ies of germanium. Later silicon took over because its electronic band-gap is larger. Nowadays, germanium is the base material mainly for γ-radiation detectors. Silicon is the most important semiconductor for the fabrication of solid-state electronic devices (memory chips, processors chips, ...) in computers, cellphones, smartphones. Silicon is also important for photovoltaic devices of energy production.Diffusion is a key process in the fabrication of semiconductor devices. This chapter deals with diffusion and point defects in silicon and germanium. It aims at making the reader familiar with the present understanding rather than painstakingly presenting all diffusion data available a good deal of which may be found in a data collection by Stolwijk and Bracht [1], in the author’s textbook [2], and in recent review papers by Bracht [3, 4]. We mainly review self-diffusion, diffusion of doping elements, oxygen diffusion, and diffusion modes of hybrid foreign elements in elemental semiconductors.Self-diffusion in elemental semiconductors is a very slow process compared to metals. One of the reasons is that the equilibrium concentrations of vacancies and self-interstitials are low. In contrast to metals, point defects in semiconductors exist in neutral and in charged states. The concentrations of charged point defects are therefore affected by doping [2 - 4].

APA, Harvard, Vancouver, ISO, and other styles

4

Suezawa, Masashi. "Defects in Semiconductors." Materia Japan 36, no. 9 (1997): 837–39. http://dx.doi.org/10.2320/materia.36.837.

Full text

APA, Harvard, Vancouver, ISO, and other styles

5

Dannefaer, S. "Defects in semiconductors." Radiation Effects and Defects in Solids 111-112, no. 1-2 (December 1989): 65–76. http://dx.doi.org/10.1080/10420158908212982.

Full text

APA, Harvard, Vancouver, ISO, and other styles

6

McCluskey, Matthew D., and Anderson Janotti. "Defects in Semiconductors." Journal of Applied Physics 127, no. 19 (May 21, 2020): 190401. http://dx.doi.org/10.1063/5.0012677.

Full text

APA, Harvard, Vancouver, ISO, and other styles

7

Brillson, Leonard, Jonathan Cox, Hantian Gao, Geoffrey Foster, William Ruane, Alexander Jarjour, Martin Allen, David Look, Holger von Wenckstern, and Marius Grundmann. "Native Point Defect Measurement and Manipulation in ZnO Nanostructures." Materials 12, no. 14 (July 12, 2019): 2242. http://dx.doi.org/10.3390/ma12142242.

Full text

Abstract:

This review presents recent research advances in measuring native point defects in ZnO nanostructures, establishing how these defects affect nanoscale electronic properties, and developing new techniques to manipulate these defects to control nano- and micro- wire electronic properties. From spatially-resolved cathodoluminescence spectroscopy, we now know that electrically-active native point defects are present inside, as well as at the surfaces of, ZnO and other semiconductor nanostructures. These defects within nanowires and at their metal interfaces can dominate electrical contact properties, yet they are sensitive to manipulation by chemical interactions, energy beams, as well as applied electrical fields. Non-uniform defect distributions are common among semiconductors, and their effects are magnified in semiconductor nanostructures so that their electronic effects are significant. The ability to measure native point defects directly on a nanoscale and manipulate their spatial distributions by multiple techniques presents exciting possibilities for future ZnO nanoscale electronics.

APA, Harvard, Vancouver, ISO, and other styles

8

Zeng, Haibo, Xue Ning, and Xiaoming Li. "An insight into defect relaxation in metastable ZnO reflected by a unique luminescence and Raman evolutions." Physical Chemistry Chemical Physics 17, no. 29 (2015): 19637–42. http://dx.doi.org/10.1039/c5cp02392k.

Full text

APA, Harvard, Vancouver, ISO, and other styles

9

Yakubovich, Boris. "Influence of penetrating radiations on electrical low frequency noise of semiconductors." ADVANCES IN APPLIED PHYSICS 9, no. 3 (August 3, 2021): 181–86. http://dx.doi.org/10.51368/2307-4469-2021-9-3-181-186.

Full text

Abstract:

The influence of penetrating radiations on the electrical low-frequency noise of semiconductors is studied. Expression is calculated that determines the number of structural defects in semiconductors arising from exposure to penetrating radia-tion. General form expression is calculated for the spectrum of electrical low-frequency noise in semiconductors when exposed to penetrating radiation. Quanti-tative relationship was established between the spectrum of electrical low-frequency noise and the development of disturbances in the structure of semicon-ductors caused by penetrating radiations. The results obtained can be used to de-termine the spectra of electrical noise in semiconductors of various types and in numerous semiconductor devices. The results of the article have practical applica-tions. Calculated expressions allow to make estimates of the intensity of electrical low-frequency noise, from which conclusions can be drawn about possibility of functioning and reliability of semiconductor devices. Established relationship be-tween electrical noise and radiation defects can be used to estimate, based on spec-tral characteristics of the noise, the defectiveness of structure of semiconductors subjected to radiation damage.

APA, Harvard, Vancouver, ISO, and other styles

10

Antonelli, A., J. F. Justo, and A. Fazzio. "Point defect interactions with extended defects in semiconductors." Physical Review B 60, no. 7 (August 15, 1999): 4711–14. http://dx.doi.org/10.1103/physrevb.60.4711.

Full text

APA, Harvard, Vancouver, ISO, and other styles

11

Kawasuso, Atsuo, and Masayuki Hasegawa. "Defects in Bulk Semiconductors." Materia Japan 35, no. 2 (1996): 130–39. http://dx.doi.org/10.2320/materia.35.130.

Full text

APA, Harvard, Vancouver, ISO, and other styles

12

Robertson, J. "Defects in amorphous semiconductors." Philosophical Magazine B 51, no. 2 (February 1985): 183–92. http://dx.doi.org/10.1080/13642818508240562.

Full text

APA, Harvard, Vancouver, ISO, and other styles

13

Callaway, Joseph, and A. James Hughes. "Localized defects in semiconductors." International Journal of Quantum Chemistry 1, S1 (June 18, 2009): 769–71. http://dx.doi.org/10.1002/qua.560010684.

Full text

APA, Harvard, Vancouver, ISO, and other styles

14

Komninou, Philomela. "Extended Defects in Semiconductors." physica status solidi (c) 10, no. 1 (January 2013): 7–9. http://dx.doi.org/10.1002/pssc.201360154.

Full text

APA, Harvard, Vancouver, ISO, and other styles

15

Seibt, Michael, and Martin Kittler. "Extended Defects in Semiconductors." physica status solidi (c) 12, no. 8 (August 2015): 1065–66. http://dx.doi.org/10.1002/pssc.201570099.

Full text

APA, Harvard, Vancouver, ISO, and other styles

16

Alexander, H. "Extended Defects in Semiconductors." Crystal Research and Technology 28, no. 1 (1993): K8—K9. http://dx.doi.org/10.1002/crat.2170280126.

Full text

APA, Harvard, Vancouver, ISO, and other styles

17

McKernan, Stuart, and C. Barry Carter. "Planar defects in AIN." Proceedings, annual meeting, Electron Microscopy Society of America 47 (August 6, 1989): 432–33. http://dx.doi.org/10.1017/s0424820100154135.

Full text

Abstract:

Aluminum nitride has recently become the subject of much interest as a technologically useful ceramic. The mechanical strength, high thermal conductivity and large electrical resistivity and a relatively small thermal expansion coefficient, make this material extremely well suited as a semiconductor substrate material. AlN has the hexagonal, wurtzite structure rather than the cubic structure of the more common semiconductors. It is also a polar material. The characterization of microstructural defects in this material is obviously necessary to the understanding of the materials properties.In sintered AlN material, several different planar defects have previously been examined. Anti-phase boundaries (which produce the same configuration as basal twins in this structure) and stacking-faults have been identified in this material. A defect described as a “dome-like defect” has also been reported. The association of oxygen impurities with these extended defects has also been proposed. In this paper we report the observation of a defect (which may be the same as the “dome-like defect”) consisting of a flat, planar, basal fault and a curved, planar fault (rather than a spherical one) which join together to enclose a region of AlN, and separate it from the rest of the grain.

APA, Harvard, Vancouver, ISO, and other styles

18

HUNG, VU VAN, and LE DAI THANH. "MELTING CURVE OF SEMICONDUCTORS WITH DEFECTS: PRESSURE DEPENDENCE." International Journal of Modern Physics B 26, no. 07 (March 20, 2012): 1250050. http://dx.doi.org/10.1142/s0217979212500506.

Full text

Abstract:

The high-pressure melting curve of semiconductors with defects has been studied using statistical moment method (SMM). In agreement with experiments and with DFT calculations we obtain a negative slope for the high-pressure melting curve. We have derived a new equation for the melting curve of the defect semiconductors. The melting was investigated at different high pressures, and the SMM calculated melting temperature of Si, AlP, AlAs and GaP crystals with defects being in good agreement with previous experiments.

APA, Harvard, Vancouver, ISO, and other styles

19

Lee, Donghun, and Jay A. Gupta. "Perspectives on deterministic control of quantum point defects by scanned probes." Nanophotonics 8, no. 11 (October 30, 2019): 2033–40. http://dx.doi.org/10.1515/nanoph-2019-0212.

Full text

Abstract:

AbstractControl over individual point defects in solid-state systems is becoming increasingly important, not only for current semiconductor industries but also for next generation quantum information science and technologies. To realize the potential of these defects for scalable and high-performance quantum applications, precise placement of defects and defect clusters at the nanoscale is required, along with improved control over the nanoscale local environment to minimize decoherence. These requirements are met using scanned probe microscopy in silicon and III-V semiconductors, which suggests the extension to hosts for quantum point defects such as diamond, silicon carbide, and hexagonal boron nitride is feasible. Here we provide a perspective on the principal challenges toward this end, and new opportunities afforded by the integration of scanned probes with optical and magnetic resonance techniques.

APA, Harvard, Vancouver, ISO, and other styles

20

Estreicher, Stefan K., T. Michael Gibbons, and Michael Stavola. "Isotope-Dependent Phonon Trapping at Defects in Semiconductors." Solid State Phenomena 205-206 (October 2013): 209–12. http://dx.doi.org/10.4028/www.scientific.net/ssp.205-206.209.

Full text

Abstract:

Unexpectedly large isotope effects have been reported for the vibrational lifetimes of the H-C stretch mode of the CH2*defect in Si and the asymmetric stretch of interstitial O in Si as well. First-principles theory can explain these effects. The results imply that defects trap phonons for lengths of time that depend on the defect and sometimes on its isotopic composition. Some consequences of phonon trapping are discussed.

APA, Harvard, Vancouver, ISO, and other styles

21

Jäger, Wolfgang. "Diffusion and Defect Phenomena in III-V Semiconductors and their Investigation by Transmission Electron Microscopy." Diffusion Foundations 17 (July 2018): 29–68. http://dx.doi.org/10.4028/www.scientific.net/df.17.29.

Full text

Abstract:

This article reviews the studies of diffusion and defect phenomena induced by high-concentration zinc diffusion in the single-crystal III-V compound semiconductors GaAs, GaP, GaSb and InP by methods of transmission electron microscopy and their consequences for numerical modelling of Zn (and Cd) diffusion concentration profiles. Zinc diffusion from the vapour phase into single-crystal wafers has been chosen as a model case for interstitial-substitutional dopant diffusion in these studies. The characteristics of the formation of diffusion-induced extended defects and of the temporal evolution of the defect microstructure correlate with the experimentally determined Zn profiles whose shapes depend on the chosen diffusion conditions. General phenomena observed for all semiconductors are the formation of dislocation loops, precipitates, voids, and dislocations and of Zn-rich precipitates in the diffusion regions. The formation of extended defects near the diffusion front can be explained as result of point defect supersaturations generated by interstitial-substitutional zinc exchange via the kick-out mechanism. The defects may act as sinks for dopants and as sources and sinks for point defects during the continuing diffusion process, thereby providing a path to establishing defect-mediated local point defect equilibria. The investigations established a consistent picture of the formation and temporal evolution of defects and the mechanisms of zinc diffusion in these semiconductors for diffusion conditions leading to high-concentration Zn concentrations. Based on these results, numerical modelling of anomalously shaped dopant concentration profiles leads to satisfactory quantitative results and yields information on type and charge states of the point defect species involved, also for near-surface Zn concentration profiles and the absence of extended defects.

APA, Harvard, Vancouver, ISO, and other styles

22

Hautojärvi, Pekka J. "Defects in Metals and Semiconductors." Materials Science Forum 363-365 (April 2001): 698–700. http://dx.doi.org/10.4028/www.scientific.net/msf.363-365.698.

Full text

APA, Harvard, Vancouver, ISO, and other styles

23

Stiévenard, Didier. "Irradiation Induced Defects in Semiconductors." Solid State Phenomena 30-31 (January 1992): 229–76. http://dx.doi.org/10.4028/www.scientific.net/ssp.30-31.229.

Full text

APA, Harvard, Vancouver, ISO, and other styles

24

Bourgoin, J. C. "Metastable Defects in Compound Semiconductors." Solid State Phenomena 71 (October 1999): 73–92. http://dx.doi.org/10.4028/www.scientific.net/ssp.71.73.

Full text

APA, Harvard, Vancouver, ISO, and other styles

25

Lambrecht, Walter. "Dopants and Defects in Semiconductors." Materials Today 15, no. 7-8 (July 2012): 349. http://dx.doi.org/10.1016/s1369-7021(12)70146-3.

Full text

APA, Harvard, Vancouver, ISO, and other styles

26

Seebauer, Edmund G., and Meredith C. Kratzer. "Charged point defects in semiconductors." Materials Science and Engineering: R: Reports 55, no. 3-6 (December 2006): 57–149. http://dx.doi.org/10.1016/j.mser.2006.01.002.

Full text

APA, Harvard, Vancouver, ISO, and other styles

27

Höche, H. R., H. S. Leipner, and G. Stadermann. "Line Defects in AIIIBV Semiconductors." physica status solidi (a) 98, no. 2 (December 16, 1986): 503–10. http://dx.doi.org/10.1002/pssa.2210980221.

Full text

APA, Harvard, Vancouver, ISO, and other styles

28

Deicher, M. "Dynamics of defects in semiconductors." Hyperfine Interactions 79, no. 1-4 (1993): 681–700. http://dx.doi.org/10.1007/bf00567596.

Full text

APA, Harvard, Vancouver, ISO, and other styles

29

Walukiewicz, W. "Amphoteric native defects in semiconductors." Applied Physics Letters 54, no. 21 (May 22, 1989): 2094–96. http://dx.doi.org/10.1063/1.101174.

Full text

APA, Harvard, Vancouver, ISO, and other styles

30

Rajan, Krishna. "Defects in Strained Layer Semiconductors." JOM 39, no. 6 (June 1987): 24–25. http://dx.doi.org/10.1007/bf03258056.

Full text

APA, Harvard, Vancouver, ISO, and other styles

31

Estreicher, Stefan K., T. Michael Gibbons, M. Bahadir Bebek, and Alexander L. Cardona. "Heat Flow and Defects in Semiconductors: beyond the Phonon Scattering Assumption." Solid State Phenomena 242 (October 2015): 335–43. http://dx.doi.org/10.4028/www.scientific.net/ssp.242.335.

Full text

Abstract:

It is universally accepted that defects in materials scatter thermal phonons, and that this scattering is the reason why defects reduce the flow of heat relative to the defect-free material. However, ab-initio molecular-dynamics simulations which include defect dynamics show that the interactions between thermal phonons and defects involve the coupling between bulk (delocalized) and defect-related (localized) oscillators. Defects introduce Spatially-Localized Modes (SLMs) which trap thermal phonons for dozens to hundreds of periods of oscillation, much longer than the lifetimes of bulk excitations of the same frequency. When a phonon traps in a SLM, momentum is lost and the decay of localized phonons does not depend on the origin of the excitation but on the availability of receiving modes. This strongly suggests that carefully selected interfaces and/or δ-layers can be used to predict and control the flow of heat.

APA, Harvard, Vancouver, ISO, and other styles

32

Cochrane, J., and P. Carpenter. "Characterization of Semiconductors Grown in a Rotating Magnetic Field." Microscopy and Microanalysis 7, S2 (August 2001): 568–69. http://dx.doi.org/10.1017/s1431927600028919.

Full text

Abstract:

Many different techniques have been used in attempts to minimize defects in single crystal semiconductors. This study examines semiconductors grown in the presence of a rotating magnetic field (RMF). The RMF method is commonly used in metallurgy to stir an electrically conducting liquid during the casting process which can reduce the effects of buoyancy driven convection and enhance the mass transfer process. The variation of heat and mass transfer processes by RMF can be controlled by selecting a specific frequency and strength of the magnetic field. Both numerical modeling and space-based crystal growth experiments using RMF indicate that the application of RMF to solidification of semiconductors will dramatically minimize defects and inclusions.A ground based program in the Microgravity Research Division at NASA's Marshall Space Flight Center has been studying the effects of RMF on various semiconductor compounds grown by the traveling heater method (THM).

APA, Harvard, Vancouver, ISO, and other styles

33

Nolte, David, and Michael Melloch. "Bandgap and Defect Engineering for Semiconductor Holographic Materials: Photorefractive Quantum Wells and Thin Films." MRS Bulletin 19, no. 3 (March 1994): 44–49. http://dx.doi.org/10.1557/s0883769400039683.

Full text

Abstract:

Bandgap engineering of thin semiconductor layers and defect engineering combine to form photorefractive (PR) quantum well structures. PR quantum wells are semi-insulating thin films useful for dynamic holography and other coherent and incoherent optical applications. As materials for thin-film dynamic holography, they have high nonlinear-optical sensitivity and high speed.The PR effect translates a spatially varying irradiance, from the interference of two or more coherent light beams, into a refractive index grating. The multiple-step PR process begins with photoexcitation of charge carriers, followed by transport and trapping of charge at deep defects. The trapped space-charge generates electric fields that alter the refractive index of the material through the electrooptic effect. The same laser beams that generate the gratings diffract from the gratings, leading to a rich variety of multiple-beam effects, such as two-wave and four-wave mixing.Because the PR process involves several distinct physical parameters, such as carrier mobility and electrooptic coefficients, optimized performance requires a coincidence of favorable properties in a single material. Rather than relying on coincidence, bandgap engineering of multiple layers of semiconductors provides a way to individually tune the separate material pa rameters. Likewise, defect engineering in semiconductors provides flexibility in the choice of defects, their concentrations, and degree of compensation. Bandgap and defect engineering combined make custom designed PR materials possible.

APA, Harvard, Vancouver, ISO, and other styles

34

Dietl, Tomasz, and Hideo Ohno. "Ferromagnetic III–V and II–VI Semiconductors." MRS Bulletin 28, no. 10 (October 2003): 714–19. http://dx.doi.org/10.1557/mrs2003.211.

Full text

Abstract:

AbstractRecent years have witnessed extensive research aimed at developing functional, tetrahedrally coordinated ferromagnetic semiconductors that could combine the resources of semiconductor quantum structures and ferromagnetic materials systems and thus lay the foundation for semiconductor spintronics. Spin-injection capabilities and tunability of magnetization by light and electric field in Mn-based III–V and II–VI diluted magnetic semiconductors are examples of noteworthy accomplishments. This article reviews the present understanding of carrier-controlled ferromagnetism in these compounds with a focus on mechanisms determining Curie temperatures and accounting for magnetic anisotropy and spin stiffness as a function of carrier density, strain, and confinement. Materials issues encountered in the search for semiconductors with a Curie point above room temperature are addressed, emphasizing the question of solubility limits and self-compensation that can lead to precipitates and point defects. Prospects associated with compounds containing magnetic ions other than Mn are presented.

APA, Harvard, Vancouver, ISO, and other styles

35

Poklonski, N. A., S. A. Vyrko, A. I. Kovalev, I. I. Anikeev, and N. I. Gorbachuk. "Design of Peltier Element Based on Semiconductors with Hopping Electron Transfer via Defects." Devices and Methods of Measurements 12, no. 1 (March 19, 2021): 13–22. http://dx.doi.org/10.21122/2220-9506-2021-12-1-13-22.

Full text

Abstract:

The study of thermoelectric properties of crystalline semiconductors with structural defects is of practical interest in the development of radiation-resistant Peltier elements. In this case, the spectrum of energy levels of hydrogen-like impurities and intrinsic point defects in the band gap (energy gap) of crystal plays an important role.The purpose of this work is to analyze the features of the single-electron band model of semiconductors with hopping electron migration both via atoms of hydrogen-like impurities and via their own point triplecharged intrinsic defects in the c- and v-bands, as well as to search for the possibility of their use in the Peltier element in the temperature range, when the transitions of electrons and holes from impurity atoms and/or intrinsic defects to the c- and v-bands can be neglected.For Peltier elements with electron hopping migration we propose: (i) an h-diode containing |d1)and |d2)-regions with hydrogen-like donors of two types in the charge states (0) and (+1) and compensating them hydrogen-like acceptors in the charge state (−1); (ii) a homogeneous semiconductor containing intrinsic t-defects in the charge states (−1, 0, +1), as well as ions of donors and acceptors to control the distribution of t-defects over the charge states. The band diagrams of the proposed Peltier elements in equilibrium and upon excitation of a stationary hopping electric current are analyzed.A model of the h-diode containing hydrogen-like donors of two types |d1) and |d2) with hopping migration of electrons between them for 50 % compensation by acceptors is considered. It is shown that in the case of the reverse (forward) electrical bias of the diode, the cooling (heating) of the region of the electric double layer between |d1)and |d2)-regions is possible.A Peltier element based on a semiconductor with point t-defects is considered. It is assumed that the temperature and the concentration of ions of hydrogen-like acceptors and donors are to assure all t-defects to be in the charge state (0). It is shown that in such an element it is possible to cool down the metal-semiconductor contact under a negative electric potential and to heat up the opposite contact under a positive potential.

APA, Harvard, Vancouver, ISO, and other styles

36

LEE, Hyun Seok. "Defects and Optoelectronic Properties in 2D Semiconductors." Physics and High Technology 29, no. 9 (September 30, 2020): 11–14. http://dx.doi.org/10.3938/phit.29.031.

Full text

Abstract:

Two-dimensional (2D) van der Waals semiconductors have potential for various optoelectronic applications, owing to their unique optical and electrical properties at an atomic layer thickness. A stable excitonic emission from 2D monolayer semiconductors at room temperature, owing to a reduced dielectric screening effect, opens new fields of research on excitonics and valleytronics. Moreover, their low dimensionality without surface dangling bonds allows for unique quantum transport phenomena via artificial van der Waals stacking using a versatile library of 2D materials. In this article, the author introduces the tunable quantum optoelectronic properties of 2D semiconductors by manipulating native defects, van der Waals interfaces, Coulomb interactions, etc. Additionally, the author reviews the electronic and the optoelectronic applications utilizing such unique tunable properties of 2D semiconductors.

APA, Harvard, Vancouver, ISO, and other styles

37

Hsu, Julia W. P. "Semiconductor Defect Studies Using Scanning Probes." Microscopy and Microanalysis 6, S2 (August 2000): 704–5. http://dx.doi.org/10.1017/s1431927600036011.

Full text

Abstract:

Understanding how defects alter physical properties of materials has lead to improvements in materials growth as well as device performance. Transmission electron microscopy (TEM) provides an invaluable tool for structural characterization of defects. Our current knowledge of crystallographic defects, such as dislocations, would not have been possible without TEM. Recently, scanning tunneling microscopy and scanning force microscopy (SFM) have shown the capability of imaging surface defects with atomic or near-atomic resolution in topographic images. What is more important is to gain knowledge on how the presence of a certain type of defects changes the physical properties of materials. For example, how is the carrier lifetime altered near electrically active defects? How does photoresponse vary near grain boundaries? Where are defect levels in the forbidden bandgap? This talk will discuss several examples of how scanning probe microscopies (SPMs) can contribute to this aspect of defect studies in semiconductors.

APA, Harvard, Vancouver, ISO, and other styles

38

Nguyen, Thien-Phap, Cédric Renaud, and Chun-Hao Huang. "Electrically Active Defects in Organic Semiconductors." Journal of the Korean Physical Society 52, no. 5 (May 15, 2008): 1550–53. http://dx.doi.org/10.3938/jkps.52.1550.

Full text

APA, Harvard, Vancouver, ISO, and other styles

39

Mascher, Peter. "Bulk Studies of Defects in Semiconductors." Materials Science Forum 363-365 (April 2001): 30–34. http://dx.doi.org/10.4028/www.scientific.net/msf.363-365.30.

Full text

APA, Harvard, Vancouver, ISO, and other styles

40

Hung, Vu Van, and Le Dai Thanh. "Thermodynamic Properties of Semiconductors with Defects." Materials Sciences and Applications 02, no. 09 (2011): 1225–32. http://dx.doi.org/10.4236/msa.2011.29166.

Full text

APA, Harvard, Vancouver, ISO, and other styles

41

Hautojärvi, P. "Positron Spectroscopy of Defects in Semiconductors." Le Journal de Physique IV 05, no. C1 (January 1995): C1–3—C1–14. http://dx.doi.org/10.1051/jp4:1995101.

Full text

APA, Harvard, Vancouver, ISO, and other styles

42

WILSHAW, P. R., T. S. FELL, and M. D. COTEAU. "EBIC CONTRAST OF DEFECTS IN SEMICONDUCTORS." Le Journal de Physique IV 01, no. C6 (December 1991): C6–3—C6–14. http://dx.doi.org/10.1051/jp4:1991601.

Full text

APA, Harvard, Vancouver, ISO, and other styles

43

Li, W., and J. D. Patterson. "Deep defects in narrow-gap semiconductors." Physical Review B 50, no. 20 (November 15, 1994): 14903–10. http://dx.doi.org/10.1103/physrevb.50.14903.

Full text

APA, Harvard, Vancouver, ISO, and other styles

44

Masterov, V. F., S. I. Bondarevskii, F. S. Nasredinov, N. P. Seregin, and P. P. Seregin. "Antistructural defects in PbTe-type semiconductors." Semiconductors 33, no. 7 (July 1999): 710–11. http://dx.doi.org/10.1134/1.1187765.

Full text

APA, Harvard, Vancouver, ISO, and other styles

45

Bar-Yam, Y., and J. D. Joannopoulos. "Theories of defects in amorphous semiconductors." Journal of Non-Crystalline Solids 97-98 (December 1987): 467–74. http://dx.doi.org/10.1016/0022-3093(87)90110-4.

Full text

APA, Harvard, Vancouver, ISO, and other styles

46

Weber, J�rg. "Molecule-like defects in crystalline semiconductors." Applied Physics A Solids and Surfaces 48, no. 1 (January 1989): 1. http://dx.doi.org/10.1007/bf00617757.

Full text

APA, Harvard, Vancouver, ISO, and other styles

47

Robertson, J. "Theory of defects in amorphous semiconductors." Journal of Non-Crystalline Solids 77-78 (December 1985): 37–46. http://dx.doi.org/10.1016/0022-3093(85)90605-2.

Full text

APA, Harvard, Vancouver, ISO, and other styles

48

Potin, V., P. Vermaut, P. Ruterana, and G. Nouet. "Extended defects in wurtzite nitride semiconductors." Journal of Electronic Materials 27, no. 4 (April 1998): 266–75. http://dx.doi.org/10.1007/s11664-998-0398-3.

Full text

APA, Harvard, Vancouver, ISO, and other styles

49

Watkins, G. D. "Intrinsic defects in II–VI semiconductors." Journal of Crystal Growth 159, no. 1-4 (February 1996): 338–44. http://dx.doi.org/10.1016/0022-0248(95)00680-x.

Full text

APA, Harvard, Vancouver, ISO, and other styles

50

McKenan, Stuart, M. Grant Norton, and C. Barry Carter. "Low-energy surfaces and interfaces in aluminum nitride." Proceedings, annual meeting, Electron Microscopy Society of America 48, no. 4 (August 1990): 350–51. http://dx.doi.org/10.1017/s0424820100174886.

Full text

Abstract:

As a potential semiconductor substrate material, aluminum nitride (AIN) has recently become the subject of much research. In particular, the nature of the defects which occur in this material is yet to be fully understood. The mechanical strength, high thermal conductivity and large electrical resistivity and a relatively small thermal expansion coefficient, of the defect-free, single crystal material make it extremely well suited for use as a semiconductor substrate material. The polycrystalline AIN contains grain- boundaries, second phases, and many internal defects, all of which may produce a degradation in the physical properties of the substrate. The characterization of these microstructural defects in this material is obviously necessary in the understanding of the properties of the polycrystalline material.AIN has the hexagonal, wurtzite structure rather than the cubic structure of the more common semiconductors. It is also a polar material, and many of the polar surfaces are low-index planes. Grain boundaries (and other interfaces) composed of different crystallographic planes may be expected to have different physical and electrical properties. This effect of the crystallography has been investigated by TEM in two ways; firstly, grain boundaries in polycrystalline AIN have been characterized.

APA, Harvard, Vancouver, ISO, and other styles

We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!