Books on the topic 'Defects in semiconductors'

Redfield, David. Photoinduced defects in semiconductors. Cambridge: Cambridge University Press, 1996.

Workshop on Point, Extended, and Surface Defects in Semiconductors (2nd 1988 Erice, Italy). Point and extended defects in semiconductors. New York: Plenum Press, 1989.

McCluskey, Matthew D. Dopants and defects in semiconductors. Boca Raton, FL: Taylor & Francis, 2012.

Chikawa, J., K. Sumino, and K. Wada, eds. Defects and Properties of Semiconductors. Dordrecht: Springer Netherlands, 1986. http://dx.doi.org/10.1007/978-94-009-4766-5.

Drabold, David A., and Stefan K. Estreicher, eds. Theory of Defects in Semiconductors. Berlin, Heidelberg: Springer Berlin Heidelberg, 2007. http://dx.doi.org/10.1007/11690320.

Benedek, G., A. Cavallini, and W. Schröter, eds. Point and Extended Defects in Semiconductors. Boston, MA: Springer US, 1989. http://dx.doi.org/10.1007/978-1-4684-5709-4.

Spaeth, Johann-Martin, and Harald Overhof. Point Defects in Semiconductors and Insulators. Berlin, Heidelberg: Springer Berlin Heidelberg, 2003. http://dx.doi.org/10.1007/978-3-642-55615-9.

Symposium "Dislocations and Interfaces in Semiconductors" (1988 Phoenix, Ariz.). Dislocations and interfaces in semiconductors: Proceedings of a symposium "Dislocations and Interfaces in Semiconductors". Warrendale, Pa: Metallurgical Society, 1988.

Pearton, S. J. Hydrogen in crystalline semiconductors. Berlin: Springer-Verlag, 1992.

M, Omelʹi͡anovskiĭ Ė. Transition metal impurities in semiconductors. Bristol: A. Hilger, 1986.

Omelʹi͡anovsʹkyĭ, M. E. Transition metal impurities in semiconductors. Bristol: Hilger, 1986.

C, Kratzer Meredith, ed. Charged semiconductor defects: Structure, thermodynamics and diffusion. London: Springer, 2009.

Patterson, James D. Electronic characterization of defects in narrow gap semiconductors: Semi-annual report, November 25, 1992 to June 28, 1993. [Washington, DC: National Aeronautics and Space Administration, 1993.

Dąbrowski, Władysław R. Effects of deep imperfection levels on the capacitance of semiconductor detectors =: Wpływ głębokich poziomów energetycznych na pojemność detektorów półprzewodnikowych. Kraków: Institute of Physics and Nuclear Techniques, 1988.

Milʹvidskiĭ, M. G. Strukturnye defekty v ėpitaksialʹnykh sloi͡a︡kh poluprovodnikov. Moskva: "Metallurgii͡a︡", 1985.

Symposium, on Defects in Silicon (2nd 1991 Washington D. C. ). Proceedings of the Second Symposium on Defects in Silicon: Defects in silicon II. Pennington, NJ (10 S. Main St., Pennington 08534-2896): Electrochemical Society, 1991.

Gordon, Davies, and Nazaré Maria Helena, eds. Defects in semiconductors, ICDS-19: Proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997. Uetikon-Zuerich, Switzerland: Trans Tech Publications, 1997.

Theory of defects in solids: Electronic structure of defects in insulators and semiconductors. Oxford: Clarendon, 1985.

Theory of defects in solids: Electronic structure of defects in insulators and semiconductors. Oxford: Clarendon Press, 2001.

Ferris-Prabhu, Albert V. Introduction to semiconductor device yield modeling. Boston: Artech House, 1992.

Kaschieva, S. Radiation defects in ion implanted and/or high-energy irradiated MOS structures. Hauppauge, N.Y: Nova Science Publishers, 2009.

C, Kimerling L., Parsey J. M. 1953-, and Metallurgical Society of AIME. Electronic Materials Committee., eds. Proceedings of the 13th International Conference on Defects in Semiconductors. Warrendale, Pa: Metallurgical Society of AIME, 1985.

International, Conference on Defects in Semiconductors (15th 1988 Budapest Hungary). Proceedings of the 15th International Conference on defects in semiconductors: Budapest, Hungary, August 22-26, l988. Aedermannsdorf, Switzerland: Trans Tech, 1989.

1927-, Fistulʹ V. I., ed. Termodinamika i kinetika vzaimodeĭstvui͡ushchikh defektov v poluprovodnikakh. Moskva: Nauka, 1997.

International Conference on Defects in Semiconductors (18th 1995 Sendai, Japan). Proceedings of the 18th International Conference on Defects in Semiconductors: Sendai, Japan, July 23-38, 1995. Zurich-Uetikon, Switzerland: Trans Tech Publications, 1995.

Fisher, D. J. Defects and diffusion, theory and simulation: An annual retrospective II. Stafa-Zurich: Trans Tech Publications, 2010.

International Conference on Defects in Semiconductors (17th 1993 Gmunden, Austria). Proceedings of the 17th International Conference on Defects in Semiconductors: ICDS 17 : Gmunden, Austria, July 18-23, 1993. [Zürich], Switzerland: Trans Tech Publications [distributor], 1994.

International Conference on Defects in Semiconductors (16th 1991 Bethlehem, Pa.). Proceedings of the 16th International Conference on Defects in Semiconductors: ICDS 16 : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991. Zürich, Switzerland: Trans Tech Publications, 1992.

von, Bardeleben H. J., ed. Proceedings of the 14th International Conference on Defects in Semiconductors: Paris, France, August 18-22, l986. Aedermannsdorf, Switzerland: Trans Tech, 1986.

International Conference on Defects in Semiconductors (22nd 2003 Aarhus, Denmark). Proceedings of the 22nd International Conference on Defects in Semiconductors: ICDS-22 held in Aarhus, Denmark, 28 July - 1 August 2003. Edited by Bonde Nielsen K, Nylandsted Larsen A, and Weyer G. Amsterdam: Elsevier, 2003.

International Conference on Defects in Semiconductors (13th 1984 Coronado, Calif.). Proceedings of the 13th International Conference on Defects in Semiconductors: Held at Coronado, California, August 12-17, 1984. New York: American Institute of Mining, Metallurgical, and Petroleum Engineers, Inc., 1985.

International Conference on Defects in Semiconductors (21st 2001 Giessen, Germany). Proceedings of the 21st International Conference on Defects in Semiconductors: ICDS-21 held in Giessen, Germany, 16-20 July 2001. Edited by Hofmann Detlev M. Amsterdam: Elsevier, 2001.

Kaschieva, S. Radiation defects in ion implanted and/or high-energy irradiated MOS structures. New York: Nova Science Publishers, 2010.

Trieste ICTP-IUPAP Semiconductor Symposium (6th 1990). Hydrogen in semiconductors: Bulk and surface properties : proceedings of the Sixth Trieste IUPAP-ICTP Semiconductor Symposium, International Centre for Theoretical Physics, Trieste, Italy, 27-31 August 1990. Edited by Stutzmann M and Chevallier J. Amsterdam, the Netherlands: North Holland, 1991.

Kikoin, K. A. Transition metal impurities in semiconductors: Electronic structure and physical properties. Singapore: World Scientific, 1994.

(Eddy), Simoen E., ed. Extended defects in Germanium: Fundamental and technological aspects. Berlin: Springer, 2009.

Defects in Semiconductors. Elsevier Science & Technology Books, 2015.

Defects in Semiconductors. Elsevier, 2015. http://dx.doi.org/10.1016/s0080-8784(15)x0002-0.

1930-, Chikawa J., Sumino K. 1931-, Wada K. 1950-, Society of Non-Traditional Technology (Japan), and Symposium on "Defects and Qualities of Semiconductors" (1984 : Tokyo, Japan), eds. Defects and properties of semiconductors: Defect engineering. Tokyo: KTK Scientific, 1987.

Gettering Defects in Semiconductors. Berlin/Heidelberg: Springer-Verlag, 2005. http://dx.doi.org/10.1007/3-540-29499-6.

Vladimir D. Skoupov,Victor A. Perevostchikov. Gettering Defects in Semiconductors. Springer, 2008.

Drabold, David A., and Stefan Estreicher. Theory of Defects in Semiconductors. Springer, 2010.

Michael, Stavola, ed. Identification of defects in semiconductors. San Diego: Academic Press, 1998.

A, Drabold D., and Estreicher Stefan K. 1952-, eds. Theory of defects in semiconductors. Berlin: Springer, 2007.

McCluskey, Matthew D., and Eugene E. Haller. Dopants and Defects in Semiconductors. CRC Press, 2012. http://dx.doi.org/10.1201/b11819.

Identification of Defects in Semiconductors. Elsevier, 1998. http://dx.doi.org/10.1016/s0080-8784(08)x6080-6.

(Editor), Michael Stavola, Robert K. Willardson (Series Editor), and Eicke R. Weber (Series Editor), eds. Identification of Defects in Semiconductors, Volume 51A (Semiconductors and Semimetals). Academic Press, 1998.

(Editor), Michael Stavola, Robert K. Willardson (Series Editor), and Eicke R. Weber (Series Editor), eds. Identification of Defects in Semiconductors, Volume 51B (Semiconductors and Semimetals). Academic Press, 1998.

(Editor), Michael Stavola, Robert K. Willardson (Series Editor), and Eicke R. Weber (Series Editor), eds. Identification of Defects in Semiconductors, Volume 51A (Semiconductors and Semimetals). Academic Press, 1998.

Bube, Richard H., and David Redfield. Photo-induced Defects in Semiconductors (Cambridge Studies in Semiconductor Physics and Microelectronic Engineering). Cambridge University Press, 2006.