Relevant bibliographies by topics / Defects in semiconductors

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  2. Dissertations / Theses
  3. Books
  4. Book chapters
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Academic literature on the topic 'Defects in semiconductors'

Author: Grafiati
Published: 4 June 2021
Last updated: 15 February 2022

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Journal articles on the topic "Defects in semiconductors"

1

Gösele, Ulrich M., and Teh Y. Tan. "Point Defects and Diffusion in Semiconductors." MRS Bulletin 16, no. 11 (November 1991): 42–46. http://dx.doi.org/10.1557/s0883769400055512.

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Semiconductor devices generally contain n- and p-doped regions. Doping is accomplished by incorporating certain impurity atoms that are substitutionally dissolved on lattice sites of the semiconductor crystal. In defect terminology, dopant atoms constitute extrinsic point defects. In this sense, the whole semiconductor industry is based on controlled introduction of specific point defects. This article addresses intrinsic point defects, ones that come from the native crystal. These defects govern the diffusion processes of dopants in semiconductors. Diffusion is the most basic process associated with the introduction of dopants into semiconductors. Since silicon and gallium arsenide are the most widely used semiconductors for microelectronic and optoelectronic device applications, this article will concentrate on these two materials and comment only briefly on other semiconductors.A main technological driving force for dealing with intrinsic point defects stems from the necessity to simulate dopant diffusion processes accurately. Intrinsic point defects also play a role in critical integrated circuit fabrication processes such as ion-implantation or surface oxidation. In these processes, as well as during crystal growth, intrinsic point defects may agglomerate and negatively impact the performance of electronic or photovoltaic devices. If properly controlled, point defects and their agglomerates may also be used to accomplish positive goals such as enhancing device performance or processing yield.
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Batstone, J. L. "Structural and electronic properties of defects in semiconductors." Proceedings, annual meeting, Electron Microscopy Society of America 53 (August 13, 1995): 4–5. http://dx.doi.org/10.1017/s0424820100136398.

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The development of growth techniques such as metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy during the last fifteen years has resulted in the growth of high quality epitaxial semiconductor thin films for the semiconductor device industry. The III-V and II-VI semiconductors exhibit a wide range of fundamental band gap energies, enabling the fabrication of sophisticated optoelectronic devices such as lasers and electroluminescent displays. However, the radiative efficiency of such devices is strongly affected by the presence of optically and electrically active defects within the epitaxial layer; thus an understanding of factors influencing the defect densities is required.Extended defects such as dislocations, twins, stacking faults and grain boundaries can occur during epitaxial growth to relieve the misfit strain that builds up. Such defects can nucleate either at surfaces or thin film/substrate interfaces and the growth and nucleation events can be determined by in situ transmission electron microscopy (TEM).
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Mehrer, Helmut. "Diffusion and Point Defects in Elemental Semiconductors." Diffusion Foundations 17 (July 2018): 1–28. http://dx.doi.org/10.4028/www.scientific.net/df.17.1.

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Elemental semiconductors play an important role in high-technology equipment used in industry and everyday life. The first transistors were made in the 1950ies of germanium. Later silicon took over because its electronic band-gap is larger. Nowadays, germanium is the base material mainly for γ-radiation detectors. Silicon is the most important semiconductor for the fabrication of solid-state electronic devices (memory chips, processors chips, ...) in computers, cellphones, smartphones. Silicon is also important for photovoltaic devices of energy production.Diffusion is a key process in the fabrication of semiconductor devices. This chapter deals with diffusion and point defects in silicon and germanium. It aims at making the reader familiar with the present understanding rather than painstakingly presenting all diffusion data available a good deal of which may be found in a data collection by Stolwijk and Bracht [1], in the author’s textbook [2], and in recent review papers by Bracht [3, 4]. We mainly review self-diffusion, diffusion of doping elements, oxygen diffusion, and diffusion modes of hybrid foreign elements in elemental semiconductors.Self-diffusion in elemental semiconductors is a very slow process compared to metals. One of the reasons is that the equilibrium concentrations of vacancies and self-interstitials are low. In contrast to metals, point defects in semiconductors exist in neutral and in charged states. The concentrations of charged point defects are therefore affected by doping [2 - 4].
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Suezawa, Masashi. "Defects in Semiconductors." Materia Japan 36, no. 9 (1997): 837–39. http://dx.doi.org/10.2320/materia.36.837.

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Dannefaer, S. "Defects in semiconductors." Radiation Effects and Defects in Solids 111-112, no. 1-2 (December 1989): 65–76. http://dx.doi.org/10.1080/10420158908212982.

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McCluskey, Matthew D., and Anderson Janotti. "Defects in Semiconductors." Journal of Applied Physics 127, no. 19 (May 21, 2020): 190401. http://dx.doi.org/10.1063/5.0012677.

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Brillson, Leonard, Jonathan Cox, Hantian Gao, Geoffrey Foster, William Ruane, Alexander Jarjour, Martin Allen, David Look, Holger von Wenckstern, and Marius Grundmann. "Native Point Defect Measurement and Manipulation in ZnO Nanostructures." Materials 12, no. 14 (July 12, 2019): 2242. http://dx.doi.org/10.3390/ma12142242.

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This review presents recent research advances in measuring native point defects in ZnO nanostructures, establishing how these defects affect nanoscale electronic properties, and developing new techniques to manipulate these defects to control nano- and micro- wire electronic properties. From spatially-resolved cathodoluminescence spectroscopy, we now know that electrically-active native point defects are present inside, as well as at the surfaces of, ZnO and other semiconductor nanostructures. These defects within nanowires and at their metal interfaces can dominate electrical contact properties, yet they are sensitive to manipulation by chemical interactions, energy beams, as well as applied electrical fields. Non-uniform defect distributions are common among semiconductors, and their effects are magnified in semiconductor nanostructures so that their electronic effects are significant. The ability to measure native point defects directly on a nanoscale and manipulate their spatial distributions by multiple techniques presents exciting possibilities for future ZnO nanoscale electronics.
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Zeng, Haibo, Xue Ning, and Xiaoming Li. "An insight into defect relaxation in metastable ZnO reflected by a unique luminescence and Raman evolutions." Physical Chemistry Chemical Physics 17, no. 29 (2015): 19637–42. http://dx.doi.org/10.1039/c5cp02392k.

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Yakubovich, Boris. "Influence of penetrating radiations on electrical low frequency noise of semiconductors." ADVANCES IN APPLIED PHYSICS 9, no. 3 (August 3, 2021): 181–86. http://dx.doi.org/10.51368/2307-4469-2021-9-3-181-186.

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The influence of penetrating radiations on the electrical low-frequency noise of semiconductors is studied. Expression is calculated that determines the number of structural defects in semiconductors arising from exposure to penetrating radia-tion. General form expression is calculated for the spectrum of electrical low-frequency noise in semiconductors when exposed to penetrating radiation. Quanti-tative relationship was established between the spectrum of electrical low-frequency noise and the development of disturbances in the structure of semicon-ductors caused by penetrating radiations. The results obtained can be used to de-termine the spectra of electrical noise in semiconductors of various types and in numerous semiconductor devices. The results of the article have practical applica-tions. Calculated expressions allow to make estimates of the intensity of electrical low-frequency noise, from which conclusions can be drawn about possibility of functioning and reliability of semiconductor devices. Established relationship be-tween electrical noise and radiation defects can be used to estimate, based on spec-tral characteristics of the noise, the defectiveness of structure of semiconductors subjected to radiation damage.
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Antonelli, A., J. F. Justo, and A. Fazzio. "Point defect interactions with extended defects in semiconductors." Physical Review B 60, no. 7 (August 15, 1999): 4711–14. http://dx.doi.org/10.1103/physrevb.60.4711.

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Dissertations / Theses on the topic "Defects in semiconductors"

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Hong, Sang Jeen. "Real-time malfunction diagnosis and prognosis of reactive ion etching using neural networks." Diss., Available online, Georgia Institute of Technology, 2004:, 2003. http://etd.gatech.edu/theses/available/etd-04082004-180227/unrestricted/hong%5Fsang%5Fj%5F200312%5Fphd.pdf.

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Wasenczuk, Adam. "Defects in epitaxial II-VI semiconductors." Thesis, University of Southampton, 1998. https://eprints.soton.ac.uk/426603/.

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Cobden, David Henry. "Individual defects in mesoscopic transistors." Thesis, University of Cambridge, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.386908.

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Gladney, Dewey Clinton. "Simulating radiation-induced defects on semiconductor devices." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2004. http://library.nps.navy.mil/uhtbin/hyperion/04Sep%5FGladney.pdf.

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Doolittle, William Alan. "Fundamental understanding, characterization, passivation and gettering of electrically active defects in silicon." Diss., Georgia Institute of Technology, 1996. http://hdl.handle.net/1853/15710.

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Gatti, Fabio Garcia. "Uma contribuição para caracterização de níveis de energia de impurezas em AlxGa1-xAs tipo n." Universidade de São Paulo, 2000. http://www.teses.usp.br/teses/disponiveis/76/76132/tde-05052010-153410/.

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Neste trabalho apresentamos medidas de fotocondutividade, decaimento da fotocondutividade persistente, resistência em função da temperatura em amostras de AlxGa1-xAs de gap direto e indireto, dopadas com Si. Comparamos as teorias de Brooks-Herring e Takimoto, ambas referentes ao espalhamento por impurezas ionizadas, e sua aplicabilidade para nosso material. Interpretamos a presença de um estado de energia intermediário nos cálculos da energia de ativação baseado nos resultados de concentração de elétrons livres em função da temperatura .como devido ao defeito D-. Nos resultados de decaimento da fotocondutividade persistente no intervalo de 80 - 100K, contamos com a contribuição do espalhamento por dipolos e propomos o par d+ - VAS- como os responsáveis pela formação destes dipolos e conseqüente melhoria do ajuste da simulação numérica.
In this work, we show results of photoconductivity, decay of persistent photoconductivity, resistance x temperature in Si doped direct and indirect bandgap AlxGa1-xAs. We compare Brooks-Herring and Takimoto theories, both in reference to ionized impurity scattering applied to our material. We interpret the intermediate state in our calculation of activation energy as a D- defect. In the numerical simulation of decay of persistent photoconductivity in the range 80-100 K, we propose the dipole pair d+ - VAS- responsible for the fitting improvement, when the dipole scattering is taken into account.
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Höglund, Andreas. "Electronic Structure Calculations of Point Defects in Semiconductors." Doctoral thesis, Uppsala universitet, Fysiska institutionen, 2007. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-7926.

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In this thesis point defects in semiconductors are studied by electronic structure calculations. Results are presented for the stability and equilibrium concentrations of native defects in GaP, InP, InAs, and InSb, for the entire range of doping conditions and stoichiometry. The native defects are also studied on the (110) surfaces of InP, InAs, and InSb. Comparing the relative stability at the surface and in the bulk, it is concluded that the defects have a tendency to migrate to the surface. It is found that the cation vacancy is not stable, but decomposes into an anion antisite-anion vacancy complex. The surface charge accumulation in InAs is explained by complementary intrinsic doping by native defects and extrinsic doping by residual hydrogen. A technical investigation of the supercell treatment of defects is performed, testing existing correction schemes and suggesting a more reliable alternative. It is shown that the defect level of [2VCu-IIICu] in the solarcell-material CuIn1-xGaxSe2 leads to a smaller band gap of the ordered defect γ-phase, which possibly explains why the maximal efficiency for CuIn1-xGaxSe2 has been found for x=0.3 and not for x=0.6, as expected from the band gap of the α-phase. It is found that Zn diffuses via the kick-out mechanism in InP and GaP with activation energies of 1.60 eV and 2.49 eV, respectively. Explanations are found for the tendency of Zn to accumulate at pn-junctions in InP and to why a relatively low fraction of Zn is found on substitutional sites in InP. Finally, it is shown that the equilibrium solubility of dopants in semiconductors can be increased significantly by strategic alloying. This is shown to be due to the local stress in the material, and the solubility in an alloy can in fact be much higher than in either of the constituting elements. The equilibrium solubility of Zn in Ga0.9In0.1P is for example five orders of magnitude larger than in GaP or InP.
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Höglund, Andreas. "Electronic structure calculations of point defects in semiconductors /." Uppsala : Acta Universitatis Upsaliensis, 2007. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-7926.

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Goss, Jonathan Paul. "A first principles study of defects in semiconductors." Thesis, University of Exeter, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.361336.

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Ewels, Christopher Paul. "Density functional modelling of point defects in semiconductors." Thesis, University of Exeter, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.388588.

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Books on the topic "Defects in semiconductors"

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Redfield, David. Photoinduced defects in semiconductors. Cambridge: Cambridge University Press, 1996.

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2

Workshop on Point, Extended, and Surface Defects in Semiconductors (2nd 1988 Erice, Italy). Point and extended defects in semiconductors. New York: Plenum Press, 1989.

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McCluskey, Matthew D. Dopants and defects in semiconductors. Boca Raton, FL: Taylor & Francis, 2012.

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Chikawa, J., K. Sumino, and K. Wada, eds. Defects and Properties of Semiconductors. Dordrecht: Springer Netherlands, 1986. http://dx.doi.org/10.1007/978-94-009-4766-5.

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Drabold, David A., and Stefan K. Estreicher, eds. Theory of Defects in Semiconductors. Berlin, Heidelberg: Springer Berlin Heidelberg, 2007. http://dx.doi.org/10.1007/11690320.

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Benedek, G., A. Cavallini, and W. Schröter, eds. Point and Extended Defects in Semiconductors. Boston, MA: Springer US, 1989. http://dx.doi.org/10.1007/978-1-4684-5709-4.

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Spaeth, Johann-Martin, and Harald Overhof. Point Defects in Semiconductors and Insulators. Berlin, Heidelberg: Springer Berlin Heidelberg, 2003. http://dx.doi.org/10.1007/978-3-642-55615-9.

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Symposium "Dislocations and Interfaces in Semiconductors" (1988 Phoenix, Ariz.). Dislocations and interfaces in semiconductors: Proceedings of a symposium "Dislocations and Interfaces in Semiconductors". Warrendale, Pa: Metallurgical Society, 1988.

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Pearton, S. J. Hydrogen in crystalline semiconductors. Berlin: Springer-Verlag, 1992.

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M, Omelʹi͡anovskiĭ Ė. Transition metal impurities in semiconductors. Bristol: A. Hilger, 1986.

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Book chapters on the topic "Defects in semiconductors"

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Morigaki, K., M. Yamaguchi, I. Hirabayashi, and R. Hayasi. "Defects in a-Si:H." In Disordered Semiconductors, 415–24. Boston, MA: Springer US, 1987. http://dx.doi.org/10.1007/978-1-4613-1841-5_46.

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Yu, Peter Y., and Manuel Cardona. "Electronic Properties of Defects." In Fundamentals of Semiconductors, 149–92. Berlin, Heidelberg: Springer Berlin Heidelberg, 1996. http://dx.doi.org/10.1007/978-3-662-03313-5_4.

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Yu, Peter Y., and Manuel Cardona. "Electronic Properties of Defects." In Fundamentals of Semiconductors, 159–202. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-00710-1_4.

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Yu, Peter Y., and Manuel Cardona. "Electronic Properties of Defects." In Fundamentals of Semiconductors, 149–92. Berlin, Heidelberg: Springer Berlin Heidelberg, 1999. http://dx.doi.org/10.1007/978-3-662-03848-2_4.

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Yu, Peter Y., and Manuel Cardona. "Electronic Properties of Defects." In Fundamentals of Semiconductors, 159–202. Berlin, Heidelberg: Springer Berlin Heidelberg, 2005. http://dx.doi.org/10.1007/3-540-26475-2_4.

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Morkoç, Hadis. "Defects and Doping." In Nitride Semiconductors and Devices, 149–90. Berlin, Heidelberg: Springer Berlin Heidelberg, 1999. http://dx.doi.org/10.1007/978-3-642-58562-3_5.

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Böer, Karl W. "Defects in Amorphous Semiconductors." In Survey of Semiconductor Physics, 644–58. Boston, MA: Springer US, 1990. http://dx.doi.org/10.1007/978-1-4615-9744-5_25.

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Böer, Karl W. "Defects in Amorphous Semiconductors." In Handbook of the Physics of Thin-Film Solar Cells, 227–38. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-36748-9_13.

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Davis, E. A. "Defects in Amorphous Semiconductors." In Amorphous Solids and the Liquid State, 521–31. Boston, MA: Springer US, 1985. http://dx.doi.org/10.1007/978-1-4757-9156-3_15.

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Dimitrakopulos, Georgios P., Philomela Komninou, Theodoros Karakostas, and Robert C. Pond. "Topological Analysis of Defects in Nitride Semiconductors." In Nitride Semiconductors, 319–77. Weinheim, FRG: Wiley-VCH Verlag GmbH & Co. KGaA, 2006. http://dx.doi.org/10.1002/3527607641.ch7.

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Conference papers on the topic "Defects in semiconductors"

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Watkins, George D. "Defects in Semiconductors." In 1991 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1991. http://dx.doi.org/10.7567/ssdm.1991.a-0-2.

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Petrozza, Annamaria. "Defects in Tin-Halide Perovskite Semiconductors." In 13th Conference on Hybrid and Organic Photovoltaics. València: Fundació Scito, 2021. http://dx.doi.org/10.29363/nanoge.hopv.2021.126.

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Wakita, Masaki, Kei Suzuki, and Yuzo Shinozuka. "Nonradiative coherent carrier captures and defect reaction at deep-level defects via phonon-kick mechanism." In INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS 2013: Proceedings of the 27th International Conference on Defects in Semiconductors, ICDS-2013. AIP Publishing LLC, 2014. http://dx.doi.org/10.1063/1.4865636.

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Thinh, N. Q. "Ga-interstitial related defects in Ga(Al)NP." In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994091.

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Olender, Karolina, Tadeusz Wosinski, Andrzej Makosa, Zbigniew Tkaczyk, Valery Kolkovsky, and Grzegorz Karczewski. "Native defects in MBE-grown CdTe." In THE PHYSICS OF SEMICONDUCTORS: Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012. AIP, 2013. http://dx.doi.org/10.1063/1.4848299.

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Liguori, R., S. Aprano, and A. Rubino. "Metastable light induced defects in pentacene." In INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS 2013: Proceedings of the 27th International Conference on Defects in Semiconductors, ICDS-2013. AIP Publishing LLC, 2014. http://dx.doi.org/10.1063/1.4865638.

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McCluskey, Matthew D., and Marianne C. Tarun. "Defects and persistent conductivity in SrTiO3." In INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS 2013: Proceedings of the 27th International Conference on Defects in Semiconductors, ICDS-2013. AIP Publishing LLC, 2014. http://dx.doi.org/10.1063/1.4865661.

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Vorona, I. P., T. Mchedlidze, D. Dagnelund, I. A. Buyanova, W. M. Chen, and K. Köhler. "Identification Of Point Defects In Ga(Al)NAs Alloys." In PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006. AIP, 2007. http://dx.doi.org/10.1063/1.2729851.

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Weber, Eicke R. "Electron Paramagnetic Resonance Characterization Of Defects In Semiconductors." In 1985 Los Angeles Technical Symposium, edited by Fred H. Pollak and Raphael Tsu. SPIE, 1985. http://dx.doi.org/10.1117/12.946333.

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Devynck, Fabien, Audrius Alkauskas, Peter Broqvist, Alfredo Pasquarello, Marília Caldas, and Nelson Studart. "Energy levels of candidate defects at SiC∕SiO[sub 2] interfaces." In PHYSICS OF SEMICONDUCTORS: 29th International Conference on the Physics of Semiconductors. AIP, 2010. http://dx.doi.org/10.1063/1.3295319.

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Reports on the topic "Defects in semiconductors"

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Van Vechten, James A., and John F. Wager. Point Defects in Semiconductors: Microscopic Identification, Metastable Properties, Defect Migration, and Diffusion. Fort Belvoir, VA: Defense Technical Information Center, March 1989. http://dx.doi.org/10.21236/ada206947.

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Northrup, John E. Chemical Defects and Electronics States in Organic Semiconductors. Fort Belvoir, VA: Defense Technical Information Center, May 2008. http://dx.doi.org/10.21236/ada583048.

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Allwood, Shari J. Tri-Services Workshop on Process Induced Defects in Wide Bandgap Semiconductors. Fort Belvoir, VA: Defense Technical Information Center, August 2003. http://dx.doi.org/10.21236/ada418999.

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Ihlefeld, Jon, Elizabeth A. Paisley, Beechem, Thomas Edwin,, and Andrew Armstrong. Fundamental Science of Doping and Defects in Ga2O3 for Next Generation Power Semiconductors. Office of Scientific and Technical Information (OSTI), October 2016. http://dx.doi.org/10.2172/1563071.

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Schultz, Peter A. Modelling Charged Defects in Non-Cubic Semiconductors for Radiation Effects Studies in Next Generation Materials. Office of Scientific and Technical Information (OSTI), October 2018. http://dx.doi.org/10.2172/1481589.

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Northrup, John E. Chemical Defects, Electronic Structure, and Transport in N-type and P-type Organic Semiconductors: First Principles Theory. Fort Belvoir, VA: Defense Technical Information Center, November 2012. http://dx.doi.org/10.21236/ada579515.

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Grein, Friedrich. First-Principles Theory and Calculations of Electronic g-tensor Elements for Paramagnetic Defects in Semiconductors and Insulators. Fort Belvoir, VA: Defense Technical Information Center, July 2002. http://dx.doi.org/10.21236/ada419610.

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Ballance, Joan B., Donald J. Wolford, Jerzy Bernholc, and Eugene E. Haller. Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures. Materials Research Society Symposium Proceedings. Volume 163. Fort Belvoir, VA: Defense Technical Information Center, November 1990. http://dx.doi.org/10.21236/ada229590.

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Schiff, E. A., H. Antoniadis, J. K. Lee, and Q. Wang. Research on defects and transport in amorphous silicon-based semiconductors. Annual subcontract report, 20 February 1991--19 February 1992. Office of Scientific and Technical Information (OSTI), April 1992. http://dx.doi.org/10.2172/10137883.

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Schiff, E. A., H. Antoniadis, J. K. Lee, and Q. Wang. Research on Defects and Transport in Amorphous Silicon-Based Semiconductors, Annual Subcontract Report, 20 February 1991 - 19 February 1992. Office of Scientific and Technical Information (OSTI), April 1992. http://dx.doi.org/10.2172/5663038.

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