Relevant bibliographies by topics / Defects formation

Academic literature on the topic 'Defects formation'

Author: Grafiati
Published: 10 December 2022
Last updated: 28 January 2023

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Journal articles on the topic "Defects formation"

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Zhan, Hai Fei, Yuan Tong Gu, Cheng Yan, and Prasad K. D. V. Yarlagadda. "Numerical Exploration of the Defect’s Effect on Mechanical Properties of Nanowires under Torsion." Advanced Materials Research 335-336 (September 2011): 498–501. http://dx.doi.org/10.4028/www.scientific.net/amr.335-336.498.

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Molecular dynamics (MD) simulations have been carried out to investigate the defect’s effect on the mechanical properties of single-crystal copper nanowire with different surface defects, under torsion deformation. The torsional rigidity is found insensitive to the surface defects and the critical angle appears an obvious decrease due to the surface defects, the largest decrease is found for the nanowire with surface horizon defect. The deformation mechanism appears different degrees of influence due to surface defects. The surface defects play a role of dislocation sources. Comparing with single intrinsic stacking faults formation for the perfect nanowire, much affluent deformation processes have been activated because of surface defects, for instance, we find the twins formation for the nanowire with a surface 45odefect.
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Melikhova, Oksana, Jakub Čížek, Ivan Procházka, Tetyana E. Konstantinova, and Igor A. Yashchishyn. "Inhibition of Positronium Formation in Yttria Stabilized Zirconia Nanopowders Modified by Addition of Chromia." Materials Science Forum 733 (November 2012): 249–53. http://dx.doi.org/10.4028/www.scientific.net/msf.733.249.

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The effect of chromia additive on defects in yttria stabilized zirconia (YSZ) nanopowders was investigated in this work. It was found that positrons are trapped at vacancy-like misfit defect at grain boundaries and at larger defects situated at triple points. Moreover, a long-lived ortho-positronium contribution was found in YSZ nanopowder without chromia. Addition of chromia prolongs the lifetime of positrons trapped at vacancy-like misfit defects which indicates segregation of Cr ions at grain interfaces and interaction of Cr with vacancy-like misfit defets. Moreover addition of chromia completely suppresses formation of positronium.
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Kumar, Deepak, and Manu Khare. "Formation and Control of Defects in Iron Castings." International Journal of Scientific Research 2, no. 5 (June 1, 2012): 245–46. http://dx.doi.org/10.15373/22778179/may2013/81.

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Yoshino, M., Y. Shinzato, and Masahiko Morinaga. "Energetics of Native Defects in Al2O3 and SiO2." Materials Science Forum 449-452 (March 2004): 713–16. http://dx.doi.org/10.4028/www.scientific.net/msf.449-452.713.

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Formation energies of various defects in Al2O3and SiO2are calculated by using the plane-wave pseudopotential method. Also, the formation energies of Schottky defects and Frenkel defects are evaluated on the basis of these calculations. It is shown that formation energies of these defects are higher in SiO2than in Al2O3. In other words, less defects are formed in SiO2than in Al2O3. It is also found that the principal defect is the cation Frenkel defect in Al2O3but the anion Frenkel defect in SiO2. These results agree with the experimental results that Al ions diffuse preferably in Al2O3but oxygen ions diffuse in SiO2at high temperatures.
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Goyal, Anuj, Kiran Mathew, Richard G. Hennig, Aleksandr Chernatynskiy, Christopher R. Stanek, Samuel T. Murphy, David A. Andersson, Simon R. Phillpot, and Blas P. Uberuaga. "The Conundrum of Relaxation Volumes in First-Principles Calculations of Charged Defects in UO2." Applied Sciences 9, no. 24 (December 4, 2019): 5276. http://dx.doi.org/10.3390/app9245276.

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The defect relaxation volumes obtained from density-functional theory (DFT) calculations of charged vacancies and interstitials are much larger than their neutral counterparts, seemingly unphysically large. We focus on UO2 as our primary material of interest, but also consider Si and GaAs to reveal the generality of our results. In this work, we investigate the possible reasons for this and revisit the methods that address the calculation of charged defects in periodic DFT. We probe the dependence of the proposed energy corrections to charged defect formation energies on relaxation volumes and find that corrections such as potential alignment remain ambiguous with regards to its contribution to the charged defect relaxation volume. We also investigate the volume for the net neutral defect reactions comprising individual charged defects, and find that the aggregate formation volumes have reasonable magnitudes. This work highlights the issue that, as is well-known for defect formation energies, the defect formation volumes depend on the choice of reservoir. We show that considering the change in volume of the electron reservoir in the formation reaction of the charged defects, analogous to how volumes of atoms are accounted for in defect formation volumes, can renormalize the formation volumes of charged defects such that they are comparable to neutral defects. This approach enables the description of the elastic properties of isolated charged defects within an overall neutral material.
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Xiao, Zhong Yin, Jian Xiang Wen, Wen Yun Luo, Wen Kai Wu, Ren Xiang Gong, Jian Chong Yin, and Ting Yun Wang. "Formation of Thermally Induced Defects in Silica Optical Material." Advanced Materials Research 853 (December 2013): 62–67. http://dx.doi.org/10.4028/www.scientific.net/amr.853.62.

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Characteristics of silica optical material largely depend on its thermal history. In this paper, formation of thermally induced defects in silica optical material is studied. The formation process of defect is analyzed in detail. The results show that there is an obvious difference in defect formation induced by heating treatment when the composition of silica optical material changes. Defect formation mainly displays as the produce process when the initial defects of the silica material are zero. However, defect formation expresses as the produce and annealing process when the initial defects of the silica material are not zero. The initial defect concentration can be decreased significantly when the silica material is heated in high temperature. At the same time, the new defect is also produced. These theoretic results are consistent with the previous experimental ones.
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CONRAD, EDWARD H. "THE STABILITY OF LOW INDEX METAL SURFACES TO TOPOLOGICAL DEFECTS." International Journal of Modern Physics B 05, no. 03 (February 10, 1991): 427–59. http://dx.doi.org/10.1142/s0217979291000274.

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The study of defect formation at metal surfaces is a fundamental problem in surface physics. An understanding of defect formation is pertinent to growth and diffusion mechanisms. In addition, surface roughening, faceting, and surface melting are all defect mediated phase transitions involving the formation of different topological defects. While the importance of defects at surfaces is well recognized, the study of surface defects has been hampered by the lack of sufficiently accurate experimental techniques. In fact, it is only in the past 6 years that experiments on the thermal generation of defects on metal surfaces have been performed. This review attempts to outline both the theoretical and experimental work on surface defect formation on metal systems.
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Khomichev, V. L. "DEFECTS OF ORE FORMATION ANALYSIS." Geology and mineral resources of Siberia, no. 2 (2021): 92–98. http://dx.doi.org/10.20403/2078-0575-2021-2-92-98.

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The typification of solid mineral deposits is a leading element in the forecast of mineralization. By analogy with magmatic formations, it is based on the ore formation analysis. However, due to the absence of discrete boundaries between formations, their diagnostics encounters insurmountable difficulties, and the classification becomes dubious and controversial. To solve this urgent problem, it is necessary to have a comprehensive discussion in the circle of leading specialists, just as they did when creating the Petrographic Code.
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Darmon, Alexandre, Michael Benzaquen, David Seč, Simon Čopar, Olivier Dauchot, and Teresa Lopez-Leon. "Waltzing route toward double-helix formation in cholesteric shells." Proceedings of the National Academy of Sciences 113, no. 34 (August 4, 2016): 9469–74. http://dx.doi.org/10.1073/pnas.1525059113.

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Liquid crystals, when confined to a spherical shell, offer fascinating possibilities for producing artificial mesoscopic atoms, which could then self-assemble into materials structured at a nanoscale, such as photonic crystals or metamaterials. The spherical curvature of the shell imposes topological constraints in the molecular ordering of the liquid crystal, resulting in the formation of defects. Controlling the number of defects, that is, the shell valency, and their positions, is a key success factor for the realization of those materials. Liquid crystals with helical cholesteric order offer a promising, yet unexplored way of controlling the shell defect configuration. In this paper, we study cholesteric shells with monovalent and bivalent defect configurations. By bringing together experiments and numerical simulations, we show that the defects appearing in these two configurations have a complex inner structure, as recently reported for simulated droplets. Bivalent shells possess two highly structured defects, which are composed of a number of smaller defect rings that pile up through the shell. Monovalent shells have a single radial defect, which is composed of two nonsingular defect lines that wind around each other in a double-helix structure. The stability of the bivalent configuration against the monovalent one is controlled by c = h/p, where h is the shell thickness and p the cholesteric helical pitch. By playing with the shell geometry, we can trigger the transition between the two configurations. This transition involves a fascinating waltz dynamics, where the two defects come closer while turning around each other.
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Vachaspati, Tanmay. "Formation of topological defects." Physical Review D 44, no. 12 (December 15, 1991): 3723–29. http://dx.doi.org/10.1103/physrevd.44.3723.

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Dissertations / Theses on the topic "Defects formation"

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Cho, S. Y. "Formation and suppression of fluorenone defects in polyfluorenes." Thesis, University of Cambridge, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.597627.

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Poly(dialkylfluorene)s are one of the most important classes of blue-light emitting conjugated polymers for use in polymer light-emitting diodes. Despite their advantages of ready synthetic accessibility, and high luminance, they suffer a major problem in colour stability with an emission band in the green about 530 nm appearing very rapidly upon operation of a device. The primary source of these defects is thought to be the oxidation of monoalkylfluorenes to the corresponding fluorenone, the former being present as impurities in the dialkylfluorene monomers. (Fig. 16660) The synthesis and properties of monoalkylfluorene derivatives are described in Chapter 2. The degradation pathways of monoalkylfluorene derivatives in air were investigated using GC-MS. The thermal degradation of 9-tert-butylfluorene was also investigated. Fluorenone formation was suppressed and 2,7-disubstituted-9-tert-butyl-9H-fluorene derivatives exhibited enhanced thermal stability. A new synthetic route to 9,9-dioctyl-9H-fluorene without monoalkylfluorene defects is described in Chapter 3. Light emitting devices of polyfluorenes, prepared by Yamamoto and Suzuki polymerisation of the defect-free monomers, exhibited minimal green emission attributable to fluorenone formation. Incorporation of as little as 0.06 mol% of 9-octyl-9H-fluorene comonomer in polyfluorene led to evolution of green fluorescence in the PL and EL emission spectra. The 3-dimensional configuration of oligomeric polyfluorenes carrying twisted biphenyl comonomers is studied in Chapter 4. A study of the X-ray crystal structures of the model oligomers provided useful insight into how the twisted biphenyls effectively modify the planarity of polyfluorene backbone and suppress potential interchain interactions.
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Donaire, Manuel. "Formation of topological defects in gauge field theories." Thesis, University of Cambridge, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.613012.

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Nigmatullin, Ramil. "Formation and dynamics of structural defects in ion chains." Thesis, Imperial College London, 2014. http://hdl.handle.net/10044/1/24567.

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Non-adiabatic crossing of symmetry breaking phase transitions results in formation of a domain structure and topological defects. The average density of domains depends on the quench rate of the phase transition. Kibble-Zurek mechanism predicts the scaling of the number of domains with quench rate. Phase transitions are ubiquitous in Nature and formation of domains and defects occurs in many different systems. One example of such system is Coulomb crystals of trapped ions, where structural defects can form as a result of symmetry breaking structural transitions between different crystal configurations. In the thesis, we investigate the Kibble-Zurek mechanism using the linear to zigzag structural phase transition in trapped ion Coulomb crystals. First, we analyse the equilibrium properties of crystals in the vicinity of the critical point of the linear to zigzag transition. Next, we show how to derive Kibble-Zurek scaling laws by transforming the equations of motion into a universal form. This mathematical derivation of the scaling laws is generalized for finite and inhomogeneous systems. Two experiments measuring the defect scaling in small trapped ion crystals are described, whose results agree with molecular dynamics simulations. In order to understand and predict defect dynamics we develop the technique for calculating the effective potential in which the defects move. Using this technique we show that heavy molecular ions stabilize the structural defects in zigzag chains and suggest a way of controlling kink motion using the application of electric fields. Finally, conclusions are drawn and possibilities for future work are suggested.
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Thomas, Brian Gordon. "Investigation of panel crack formation in steel ingots using mathematical and physical models." Thesis, University of British Columbia, 1985. http://hdl.handle.net/2429/25980.

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An investigation of panel crack formation in steel ingots was undertaken to improve understanding of the mechanisms by which they develop and to evaluate possible solutions to the problem. The investigation revealed that two distinct types of panel cracks, both of which are partly caused by intermediate-temperature embrittlement of steel involving aluminum nitride precipitation, operate under different mechanisms. Isothermal, physical modelling experiments were conducted to determine the flow patterns, velocity profiles and flame geometry in a bottom-fired soaking pit and the resultant effects on heat transfer. An investigation involving comparison with analytical solutions determined the optimum numerical method to employ for the mathematical modelling of complex, two-dimensional, transient, heat-conduction problems. This method was formulated to calculate the temperature distribution in a steel ingot during the various processing stages from initial casting up to rolling and was verified with industrial measurements. A transient, elasto-visco-plastic, thermal-stress model employing the finite-element method was formulated, developed and verified using analytical solutions. Based on the temperatures calculated by the finite-element, heat-transfer model as input data, the transient, internal stress state of the ingot was calculated, taking into account the effects of phase-transformation volume changes and kinetics, creep, and temperature-dependent mechanical property behavior. The simulated stress histories were found to be directly linked to the progress of the phase-transformation front and were used to clarify the role of stress generation in panel crack formation. Finally, the results of a metallurgical investigation of steel ingot samples containing off-corner panel cracks were synthesized with the results of the physical and mathematical models to determine mechanisms and to suggest solutions for the formation of both mid-face and off-corner panel cracks. Mid-face panel cracks are apparently formed during air cooling when the mid-face surface is between the Ar₁ and 500 °C. Off-corner panel cracks appear to initiate internally during the early stages of reheating, but do not propagate to the surface until air cooling after removal from the soaking pit.
Applied Science, Faculty of
Mining Engineering, Keevil Institute of
Graduate
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De, Weerdt Filip. "Spectroscopic studies of defects in diamond including their formation and dissociation." Thesis, King's College London (University of London), 2007. https://kclpure.kcl.ac.uk/portal/en/theses/spectroscopic-studies-of-defects-in-diamond-including-their-formation-and-dissociation(b05e7748-c1ff-4c57-9c24-ec5cb84baddf).html.

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Du, Yaojun. "The dynamics of Si small point defects and formation of Si extended structures." Connect to resource, 2005. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=osu1126900310.

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Thesis (Ph. D.)--Ohio State University, 2005.
Title from first page of PDF file. Document formatted into pages; contains xix, 133 p.; also includes graphics (some col.). Includes bibliographical references (p. 126-133). Available online via OhioLINK's ETD Center
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Wang, Zhihong 1972. "Modeling microdefects formation in crystalline silicon : the roles of point defects and oxygen." Thesis, Massachusetts Institute of Technology, 2002. http://hdl.handle.net/1721.1/16905.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Chemical Engineering, February 2003.
Includes bibliographical references (p. 225-233).
This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
Most microelectronic devices are fabricated on single crystalline silicon substrates that are grown from the melt by the Czochralski crystal growth method. There is an ever increasing demand for control of size and density of microdefects in the silicon for control of quality and uniformity of the fabricated microelectronic devices. This thesis is aimed at developing a fundamental understanding of the mechanisms for formation of such microdefects through the development of models, theoretical analysis and large-scale simulation. Two major problems have been addressed. First, following the work of T. Sinno [150] and T. Mori [108], models have been developed for the transport, reaction and aggregation of native point defects - self-interstitials ('s) and vacancies (V's) - in crystalline silicon, so as to explain the dynamics of void formation (aggregation of V's) and stacking faults (aggregation of I's). Second, the model of point defect and cluster dynamics has been extended to include oxygen, the most common impurity in silicon, and to model oxide precipitation, an important step in silicon wafer preparation and device processing. The models of microdefect formation begin with transport equations for native point defects that include transport by diffusion and convection (crystal motion), recombination of Is and Vs, and the loss of point defects to clusters. Cluster formation is modeled by a combination of discrete rate equations for small-sized clusters (less than 100) and continuous Fokker-Planck equations for large cluster sizes. Simulation methods are developed for calculating, in time, space and cluster size, the evolution of point defect and cluster profiles, as a function of the temperature distribution in the crystal.
(cont.) Considerable effort has been devoted to analysis of the critical operating conditions that divide the crystal into V-rich and I-rich regions. As analyzed by Sinno [151], these radial regions of a CZ-grown silicon crystal are distinguished by a critical value of V/G=(V/G)crit, where V is the crystal pull rate and G is a measure of the axial temperature gradient at the melt/crystal interface. Numerical simulations identify that the evolution of microdefects at an axial slice of the crystal can be divided into three regions: (1) the region of rapid point defect dynamics near the melt-crystal interface, (2) a region of intermediate point defect concentrations where the crystal to too hot for these concentrations to become super-saturated, and (3) the nucleation and growth of point defect clusters caused by homogeneous nucleation and super-saturation. Asymptotic analysis of void formation is carried out in each of these regions and linked by point defect conservation to give predictions for a number of very important values, including (V/G)crit, the intermediate vacancy concentration, the void nucleation temperature, the total void concentration in the crystal and the average void size. These results agree remarkably well with simulations. Moreover, the asymptotic results give the foundation for creating a simple simulation tool for prediction of the dependence of these parameters on operating conditions. The framework for microdefect formation is extended to oxygen precipitation by including oxygen dynamics and precipitation ...
by Zhihong Wang.
Ph.D.
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Cantin, G. M. Delphine. "An investigation of the formation of hollow bead defects in pipeline field welds /." Title page, contents and abstract only, 1997. http://web4.library.adelaide.edu.au/theses/09PH/09phc231.pdf.

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Cunningham, Ross W. "Defect Formation Mechanisms in Powder-Bed Metal Additive Manufacturing." Research Showcase @ CMU, 2018. http://repository.cmu.edu/dissertations/1160.

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Metal Additive Manufacturing (AM) provides the means to fabricate complex metallic parts with reduced time to market and material waste and improved design freedom. Industries with strict materials qualifications such as aerospace, biomedical, and automotive are increasingly looking to AM to meet their production needs. However, significant materials-related challenges impede the widespread adoption of these technologies for critical components. In particular, fatigue resistance in as-built parts has proven to be inferior and unpredictable due to the large and variable presence of porosity. This presents a challenge for the qualification of any load bearing part without extensive post-processing, such as Hot Isostatic Pressing, and thorough inspection. Improved understanding of the underlying mechanisms behind defect formation will assist in designing process improvements to minimize or eliminate defects without relying entirely on postprocessing. In this work, the effects of powder, processing parameters, and post-processing on porosity formation in powder-bed metal AM processes are investigated using X-ray microtomography and a newly developed in-situ high speed radiography technique, Dynamic Xray Radiography. High resolution X-ray computed tomography is used to characterize defect morphology, size, and spatial distribution as a function of process and material inputs. Dynamic X-ray Radiography, which enables the in-situ observation of the laser-metal interactions at frame rates on the order of 100 kHz (and faster), is utilized to understand the dynamic behavior and transitions that occur in the vapor depression across process space. Experimental validation of previously held assumptions regarding defect formation as well as new insights into the influence of the vapor cavity on defect formation are presented.
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Ryningen, Birgit. "Formation and growth of crystal defects in directionally solidified multicrystalline silicon for solar cells." Doctoral thesis, Norges teknisk-naturvitenskapelige universitet, Institutt for materialteknologi, 2008. http://urn.kb.se/resolve?urn=urn:nbn:no:ntnu:diva-4980.

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Books on the topic "Defects formation"

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Davis, Anne-Christine, and Robert Brandenberger, eds. Formation and Interactions of Topological Defects. Boston, MA: Springer US, 1995. http://dx.doi.org/10.1007/978-1-4615-1883-9.

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Hill, C. T. Cosmological structure formation from soft topological defects. Batavia, IL: Fermi National Accelerator Laboratory, 1988.

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Davis, Anne-Christine. Formation and Interactions of Topological Defects: Proceedings of a NATO Advanced Study Institute on Formation and Interactions of Topological Defects, held August 22-September 2, 1994, in Cambridge, England. Boston, MA: Springer US, 1995.

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Patterson, James D. Electronic characterization of defects in narrow gap semiconductors: Final report, November 25, 1992 to November 25, 1994. Marshall Space Flight Center, AL: [National Aeronautics and Space Administration], George C. Marshall Space Flight Center, 1994.

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Patterson, James D. Electronic characterization of defects in narrow gap semiconductors: Comparison of electronic energy levels and formation energies in Mercury Cadmium Telluride Mercury Zinc Telluride and Mercury Zinc Selenide, semi-annual report, September 19, 1994 to March 19, 1995. [Washington, D.C: National Aeronautics and Space Administration, 1995.

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S, Suresh, ed. Thin film materials: Stress, defect formation and surface evolution. Cambridge: Cambridge University Press, 2003.

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Freund, L. B. Thin film materials: Stress, defect formation, and surface evolution. Cambridge, [England] ; New York: Cambridge University Press, 2009.

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Freund, L. B. Thin film materials: Stress, defect formation, and surface evolution. Cambridge, [England] ; New York: Cambridge University Press, 2009.

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Anne-Christine, Davis, Brandenberger Robert Hans, North Atlantic Treaty Organization. Scientific Affairs Division., and NATO Advanced Study Institute on Formation and Interactions of Topological Defects (1994 : Cambridge, England), eds. Formation and interactions of topological defects. New York: Plenum Press, 1995.

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Hodges, Hardy M. Formation of topological defects in phase transitions. 1989.

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Book chapters on the topic "Defects formation"

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Wada, Kazumi. "Point Defect Formation Near Surfaces." In Defects in Optoelectronic Materials, 33–42. Boca Raton: CRC Press, 2022. http://dx.doi.org/10.1201/9780367811297-3.

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Okumura, Tsugunori. "Defects induced by Metal-Semiconductor Contacts Formation." In Defects in Optoelectronic Materials, 205–53. Boca Raton: CRC Press, 2022. http://dx.doi.org/10.1201/9780367811297-7.

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Kleman, Maurice. "The Topological Classification of Defects." In Formation and Interactions of Topological Defects, 27–61. Boston, MA: Springer US, 1995. http://dx.doi.org/10.1007/978-1-4615-1883-9_2.

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Evans, J. H. "Irradiation-Induced Cavity Lattice Formation in Metals." In Patterns, Defects and Materials Instabilities, 347–70. Dordrecht: Springer Netherlands, 1990. http://dx.doi.org/10.1007/978-94-009-0593-1_23.

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Bray, A. J. "Topological Defects and Phase Ordering Dynamics." In Formation and Interactions of Topological Defects, 105–38. Boston, MA: Springer US, 1995. http://dx.doi.org/10.1007/978-1-4615-1883-9_5.

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Dworschak, K., J. S. Preston, J. E. Sipe, and H. M. Driel. "Pattern Formation during CW Laser Melting of Silicon." In Patterns, Defects and Materials Instabilities, 331–46. Dordrecht: Springer Netherlands, 1990. http://dx.doi.org/10.1007/978-94-009-0593-1_22.

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Murphy, S. M. "The Formation of Clusters of Cavities during Irradiation." In Patterns, Defects and Materials Instabilities, 371–80. Dordrecht: Springer Netherlands, 1990. http://dx.doi.org/10.1007/978-94-009-0593-1_24.

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Durrer, Ruth. "Global Field Dynamics and Cosmological Structure Formation." In Formation and Interactions of Topological Defects, 255–81. Boston, MA: Springer US, 1995. http://dx.doi.org/10.1007/978-1-4615-1883-9_10.

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Kibble, T. W. B. "Phase Transitions in the Early Universe and Defect Formation." In Formation and Interactions of Topological Defects, 1–26. Boston, MA: Springer US, 1995. http://dx.doi.org/10.1007/978-1-4615-1883-9_1.

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Turok, Neil. "Electroweak Baryogenesis." In Formation and Interactions of Topological Defects, 283–301. Boston, MA: Springer US, 1995. http://dx.doi.org/10.1007/978-1-4615-1883-9_11.

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Conference papers on the topic "Defects formation"

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Wei, Yayi, Stefan Brandl, and Frank Goodwin. "Formation mechanism of 193nm immersion defects and defect reduction strategies." In SPIE Advanced Lithography, edited by Clifford L. Henderson. SPIE, 2008. http://dx.doi.org/10.1117/12.771221.

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Kasuya, Shinta, and Masahiro Kawasaki. "Formation of topological defects during preheating." In COSMO--98. ASCE, 1999. http://dx.doi.org/10.1063/1.59444.

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Goryachev, Andrei. "Synchronization line defects in oscillatory and excitable media." In Stochastic dynamics and pattern formation in biological systems. AIP, 2000. http://dx.doi.org/10.1063/1.59938.

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Han, Yujie, Xunlang Liu, Jinghua Jiao, and Lanying Lin. "Formation mechanism of defects in annealed InP." In Asia Pacific Symposium on Optoelectronics '98, edited by Marek Osinski and Yan-Kuin Su. SPIE, 1998. http://dx.doi.org/10.1117/12.311026.

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Spergel, David N. "Topological Defects and the Formation of Structure." In Proceedings of the 1993 Theoretical Advanced Study Institute in Elementary Particle Physics. WORLD SCIENTIFIC, 1994. http://dx.doi.org/10.1142/9789814503785_0017.

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Shiu, Lin-Hung, Fu-Jye Liang, Hsing Chang, Chun-Kuang Chen, Li-Jui Chen, Tsai-Sheng Gau, and Burn J. Lin. "Immersion defect reduction, part II: the formation mechanism and reduction of patterned defects." In Advanced Lithography, edited by Donis G. Flagello. SPIE, 2007. http://dx.doi.org/10.1117/12.712527.

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Smyntyna, V., O. Kulinich, M. Glauberman, G. Chemeresuk, I. Yatsunskiy, and O. Sviridova. "Influence of Initial Silicon Defects on Processes of the Dioxide Silicon Defect Formation." In 2006 16th International Crimean Microwave and Telecommunication Technology. IEEE, 2006. http://dx.doi.org/10.1109/crmico.2006.256126.

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Shin, Min Hyo, Jong Man Han, Young Su Lee, and Hee Woong Kang. "Study on Defect Formation Mechanisms in ERW for API Steel." In 2014 10th International Pipeline Conference. American Society of Mechanical Engineers, 2014. http://dx.doi.org/10.1115/ipc2014-33082.

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In this study, defect formation mechanisms in the ERW (electric resistance welding) process for API pipe production were investigated. The results showed that defects observed in the weld joint of ERW pipe are a main factor in the deterioration of the mechanical properties of welded joints. From systematical research, it was clear that the crucial main defects of ERW pipe are caused by large inclusions with complex compositions after the steel making process and penetrators formed during ERW welding with excessive heat input condition. In order to guarantee the toughness of the weld joints, after theoretical and experimental considerations ERW pipe weld defect reducing methods can be recommended. According to previous test results, it was clear that the hook cracks caused by large inclusions were reduced by selecting the slag composition ratio of CaO and Al2O3 at the eutectoid point during steel making process. On the other hand, in case of the penetrator formation type defects, it was defined that by controlling of the heat input in the optimization range was the best solution for decreasing the penetrator formation.
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Mutter, Daniel, and Scott T. Dunham. "Formation energies of carbon related defects in Cu2ZnSnS4." In 2014 IEEE 40th Photovoltaic Specialists Conference (PVSC). IEEE, 2014. http://dx.doi.org/10.1109/pvsc.2014.6925407.

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Ren, Qin, Hongyu Li, and Masaya Kawano. "Yield Impacting Defects and Prevention of Microbump Formation." In 2019 IEEE 21st Electronics Packaging Technology Conference (EPTC). IEEE, 2019. http://dx.doi.org/10.1109/eptc47984.2019.9026698.

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Reports on the topic "Defects formation"

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Suranuntchai, Surasak, and Prarop Kritboonyarit. Limit Diagrams for Selecting Process Parameters to Prevent Defects Formation during Forward Bar Extrusion Using FEM. Warrendale, PA: SAE International, October 2005. http://dx.doi.org/10.4271/2005-32-0043.

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de Sousa, Eduardo, Renata Matsui, Leonardo Boldrini, Leandra Baptista, and José Mauro Granjeiro. Mesenchymal stem cells for the treatment of articular cartilage defects of the knee: an overview of systematic reviews. INPLASY - International Platform of Registered Systematic Review and Meta-analysis Protocols, December 2022. http://dx.doi.org/10.37766/inplasy2022.12.0114.

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Review question / Objective: Population: adults (aged between 18 and 50 years) with traumatic knee lesions who underwent treatment with mesenchymal stem cells; Intervention: defined by the treatment with mesenchymal stem cells; The comparison group: treatment with autologous chondrocytes or microfracture treatments; Primary outcome: formation of cartilage neo tissue in the defect area, determined by magnetic resonance imaging (MRI) or by direct visualization in second-look knee arthroscopy.; Secondary outcomes: based on clinical scores such as visual analog scale (VAS) for pain, Western Ontario and McMaster universities score (WOMAC), knee society score (KSS), Tegner and Lysholm.
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Shomer, Ilan, Ruth E. Stark, Victor Gaba, and James D. Batteas. Understanding the hardening syndrome of potato (Solanum tuberosum L.) tuber tissue to eliminate textural defects in fresh and fresh-peeled/cut products. United States Department of Agriculture, November 2002. http://dx.doi.org/10.32747/2002.7587238.bard.

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The project sought to understand factors and mechanisms involved in the hardening of potato tubers. This syndrome inhibits heat softening due to intercellular adhesion (ICA) strengthening, compromising the marketing of industrially processed potatoes, particularly fresh peeled-cut or frozen tubers. However, ICA strengthening occurs under conditions which are inconsistent with the current ideas that relate it to Ca-pectate following pectin methyl esterase (PME) activity or to formation of rhamnogalacturonan (RG)-II-borate. First, it was necessary to induce strengthening of the middle lamellar complex (MLX) and the ICA as a stress response in some plant parenchyma. As normally this syndrome does not occur uniformly enough to study it, we devised an efficient model in which ICA-strengthening is induced consistently under simulated stress by short-chain, linear, mono-carboxylic acid molecules (OAM), at 65 oC [appendix 1 (Shomer&Kaaber, 2006)]. This rapid strengthening was insufficient for allowing the involved agents assembly to be identifiable; but it enabled us to develop an efficient in vitro system on potato tuber parenchyma slices at 25 ºC for 7 days, whereas unified stress was reliably simulated by OAMs in all the tissue cells. Such consistent ICA-strengthening in vitro was found to be induced according to the unique physicochemical features of each OAM as related to its lipophilicity (Ko/w), pKa, protonated proportion, and carbon chain length by the following parameters: OAM dissociation constant (Kdiss), adsorption affinity constant (KA), number of adsorbed OAMs required for ICA response (cooperativity factor) and the water-induced ICA (ICAwater). Notably, ICA-strengthening is accompanied by cell sap leakage, reflecting cell membrane rupture. In vitro, stress simulation by OAMs at pH<pKa facilitated the consistent assembly of ICAstrengthening agents, which we were able to characterize for the first time at the molecular level within purified insoluble cell wall of ICA-strengthened tissue. (a) With solid-state NMR, we established the chemical structure and covalent binding to cell walls of suberin-like agents associated exclusively with ICA strengthening [appendix 3 (Yu et al., 2006)]; (b) Using proteomics, 8 isoforms of cell wall-bound patatin (a soluble vacuolar 42-kDa protein) were identified exclusively in ICA-strengthened tissue; (c) With light/electron microscopy, ultrastructural characterization, histochemistry and immunolabeling, we co-localized patatin and pectin in the primary cell wall and prominently in the MLX; (d) determination of cell wall composition (pectin, neutral sugars, Ca-pectate) yielded similar results in both controls and ICA-strengthened tissue, implicating factors other than PME activity, Ca2+ or borate ions; (e) X-ray powder diffraction experiments revealed that the cellulose crystallinity in the cell wall is masked by pectin and neutral sugars (mainly galactan), whereas heat or enzymatic pectin degradation exposed the crystalline cellulose structure. Thus, we found that exclusively in ICA-strengthened tissue, heat-resistant pectin is evident in the presence of patatin and suberinlike agents, where the cellulose crystallinity was more hidden than in fresh control tissue. Conclusions: Stress response ICA-strengthening is simulated consistently by OAMs at pH< pKa, although PME and formation of Ca-pectate and RG-II-borate are inhibited. By contrast, at pH>pKa and particularly at pH 7, ICA-strengthening is mostly inhibited, although PME activity and formation of Ca-pectate or RG-II-borate are known to be facilitated. We found that upon stress, vacuolar patatin is released with cell sap leakage, allowing the patatin to associate with the pectin in both the primary cell wall and the MLX. The stress response also includes formation of covalently bound suberin-like polyesters within the insoluble cell wall. The experiments validated the hypotheses, thus led to a novel picture of the structural and molecular alterations responsible for the textural behavior of potato tuber. These findings represent a breakthrough towards understanding of the hardening syndrome, laying the groundwork for potato-handling strategies that assure textural quality of industrially processed particularly in fresh peeled cut tubers, ready-to-prepare and frozen preserved products.
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Fabietti, L. M. R. Interface stability and defect formation during crystal growth. Office of Scientific and Technical Information (OSTI), January 1991. http://dx.doi.org/10.2172/5943509.

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Matragrano, M., and D. G. Ast. Defect formation in low mismatch systems. Final report. Office of Scientific and Technical Information (OSTI), May 1998. http://dx.doi.org/10.2172/610274.

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MENDEZ, P. F., and T. W. EAGAR. PENETRATION AND DEFECT FORMATION IN HIGH CURRENT ARC WELDING. Office of Scientific and Technical Information (OSTI), January 2003. http://dx.doi.org/10.2172/835707.

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Cooper, B. R., L. S. Muratov, B. S. J. Kang, and K. Z. Li. Mechanisms of defect complex formation and environmental-assisted fracture behavior of iron aluminides. Office of Scientific and Technical Information (OSTI), December 1997. http://dx.doi.org/10.2172/330677.

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Zinkle, S. J., L. L. Snead, and D. J. Edwards. Comparison of defect cluster accumulation and pattern formation in irradiated copper and nickel. Office of Scientific and Technical Information (OSTI), April 1995. http://dx.doi.org/10.2172/114927.

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Feenstra, R., S. J. Pennycook, and M. F. Chisholm. Defect formation and carrier doping in epitaxial films of the infinite layer compound. Office of Scientific and Technical Information (OSTI), February 1996. http://dx.doi.org/10.2172/219355.

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Coltrin, M. E., and D. S. Dandy. Simplified models of growth, defect formation, and thermal conductivity in diamond chemical vapor deposition. Office of Scientific and Technical Information (OSTI), April 1996. http://dx.doi.org/10.2172/233352.

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