Relevant bibliographies by topics / DC Sputter Deposition

Academic literature on the topic 'DC Sputter Deposition'

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Published: 6 September 2023

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Journal articles on the topic "DC Sputter Deposition"

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Thormählen, Lars, Dennis Seidler, Viktor Schell, Frans Munnik, Jeffrey McCord, and Dirk Meyners. "Sputter Deposited Magnetostrictive Layers for SAW Magnetic Field Sensors." Sensors 21, no. 24 (December 15, 2021): 8386. http://dx.doi.org/10.3390/s21248386.

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For the best possible limit of detection of any thin film-based magnetic field sensor, the functional magnetic film properties are an essential parameter. For sensors based on magnetostrictive layers, the chemical composition, morphology and intrinsic stresses of the layer have to be controlled during film deposition to further control magnetic influences such as crystallographic effects, pinning effects and stress anisotropies. For the application in magnetic surface acoustic wave sensors, the magnetostrictive layers are deposited on rotated piezoelectric single crystal substrates. The thermomechanical properties of quartz can lead to undesirable layer stresses and associated magnetic anisotropies if the temperature increases during deposition. With this in mind, we compare amorphous, magnetostrictive FeCoSiB films prepared by RF and DC magnetron sputter deposition. The chemical, structural and magnetic properties determined by elastic recoil detection, X-ray diffraction, and magneto-optical magnetometry and magnetic domain analysis are correlated with the resulting surface acoustic wave sensor properties such as phase noise level and limit of detection. To confirm the material properties, SAW sensors with magnetostrictive layers deposited with RF and DC deposition have been prepared and characterized, showing comparable detection limits below 200 pT/Hz1/2 at 10 Hz. The main benefit of the DC deposition is achieving higher deposition rates while maintaining similar low substrate temperatures.
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Somekh, R. E., and Z. H. Barber. "UHV sputter deposition with a research-scale DC magnetron." Journal of Physics E: Scientific Instruments 21, no. 11 (November 1988): 1029–33. http://dx.doi.org/10.1088/0022-3735/21/11/005.

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Kent, Karl, and Milutin Stoilovic. "Development of latent fingerprints using preferential DC sputter deposition." Forensic Science International 72, no. 1 (March 1995): 35–42. http://dx.doi.org/10.1016/0379-0738(94)01671-q.

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Sonoda, Tsutomu, and Kiyotaka Katou. "Coating of Granular Polymeric Spacers with Copper by Sputter-Deposition for Enhancing Cell Wall Structure of Sintered Highly Porous Aluminum Materials." Materials Science Forum 660-661 (October 2010): 432–36. http://dx.doi.org/10.4028/www.scientific.net/msf.660-661.432.

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The deposition of copper onto acrylic resin powder in its self-convective motion by magnetron DC sputtering was examined in order to prepare granular polymeric spacers coated with the metal, aiming at enhancing the cell wall structure of sintered highly porous aluminum materials. The fabrication of sintered highly porous aluminum materials was carried out in an ordinary powder metallurgy processing combined with a space-holder method with the polymer-copper binary spacer granules prepared by powder-coating using the sputter-deposition technique. The effects of the sputter-deposition of copper onto the spherical polymeric spacers on cell structures of the sintered porous compacts were investigated. According to optical observations, it was found that the sputtered copper could be uniformly and adherently deposited onto the surface of the acrylic granules. According to EPMA analysis on the cross-section on a sintered porous compact, it was found that Cu atoms were distributed at the vicinity of its cell walls, concluding that cell wall structures could be enhanced by this processing. Therefore it was expected that the compressive properties of the sintered highly porous aluminum materials were also improved by this powder coating process.
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Park, Min Woo, Wang Woo Lee, Jae Gab Lee, and Chong Mu Lee. "A Comparison of the Mechanical Properties of RF- and DC- Sputter-Deposited Cr Thin Films." Materials Science Forum 546-549 (May 2007): 1695–98. http://dx.doi.org/10.4028/www.scientific.net/msf.546-549.1695.

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Chromium (Cr) films were deposited on plain carbon steel sheets by DC and RF magnetron sputtering as well as by electroplating. Effects of DC or RF sputtering power on the deposition rate and properties such as hardness and surface roughness of the Cr films were investigated. X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microcopy (SEM) analyses were performed to investigate the crystal structure, surface roughness, thickness of the Cr films. The deposition rate, hardness and surface roughness of the Cr film deposited by either DC or RF sputtering increase with the increase of sputtering power. The deposition rate and hardness of the Cr film deposited by DC sputtering are higher than those of the Cr film deposited by RF sputtering, but RF sputtering offers smoother surface. The sputter-deposited Cr film is harder and has a smoother surface than the electroplated one.
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Kharrazi Olsson, M., K. Macák, U. Helmersson, and B. Hjörvarsson. "High rate reactive dc magnetron sputter deposition of Al2O3 films." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 16, no. 2 (March 1998): 639–43. http://dx.doi.org/10.1116/1.581081.

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Ting, Jyh-Ming, and B. S. Tsai. "DC reactive sputter deposition of ZnO:Al thin film on glass." Materials Chemistry and Physics 72, no. 2 (November 2001): 273–77. http://dx.doi.org/10.1016/s0254-0584(01)00451-5.

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Schneider, R., J. Geerk, G. Linker, O. Meyer, and R. Smithey. "Effects of DC bias voltage in sputter deposition of YBaCuO films." Physica C: Superconductivity 235-240 (December 1994): 671–72. http://dx.doi.org/10.1016/0921-4534(94)91559-8.

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Koren, G. "DC sputter deposition of YBa2Cu3O7 thin films for two sided coating." Physica C: Superconductivity 209, no. 4 (May 1993): 369–72. http://dx.doi.org/10.1016/0921-4534(93)90547-4.

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Kellett, B. J., and J. H. James. "Ion beam sputter deposition of YBa2Cu3O7−δ thin films." Journal of Materials Research 8, no. 12 (December 1993): 3032–42. http://dx.doi.org/10.1557/jmr.1993.3032.

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This article addresses issues associated with in situ growth of superconducting YBa2Cu3O7−δ thin films by ion beam sputtering. High oxygen partial pressure during ion beam deposition can cause significant beam broadening and oxidation of filaments and grids. Also, many of the targets used for processing YBCO are unstable when sputtered in a high oxygen partial pressure. It is shown that ion beam sputtering can produce YBCO films of comparable quality to those produced by laser ablation or dc magnetron sputtering. Typical film properties are Tco = 91 K and Jc (77 K) = 106 A cm−2. It appears that the oxygen gas pressure during the postdeposition cooldown has a more important influence on film properties than the oxygen partial pressure during deposition.
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Dissertations / Theses on the topic "DC Sputter Deposition"

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Fan, S. C. "High pressure dc sputter deposition of YBa2Cu3O7-x thin films." Thesis, University of Cambridge, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.598932.

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Thin films of the high-Tc superconductor YBa2Cu3O7-x (YBCO) are the key to devices that function at the temperature of liquid nitrogen. The main priority in depositing YBCO films is the ability to deposit smooth epitaxial films with the desired crystal structure and the correct level of oxygenation. This thesis describes the crystal structure, composition and initial growth stages of YBCO films prepared by planar dc high pressure sputtering. X-ray diffraction (XRD), atomic force microscopy (AFM), and electrical measurements have been used to study the films. Prior to a description of these experiments, two preliminary chapters are included in this thesis. The first chapter is an introduction to some basic concepts of superconductivity, and the crystal structure as well as the physical properties of YBCO. The second chapter reviews important issues and compares the different deposition techniques for preparing YBCO thin films. In a preliminary study of YBCO films deposited under different PxD conditions (the product of pressure and target-to-substrate distance), it was found that a PxD of 2000 Pa-mm is necessary to prevent preferential resputtering. A study of the thermalisation of the high energy particles emanating from a sputtering target was carried out on both Nb films and YBCO films. The sputtering atmospheres and the time for which the ceramic YBCO target has been operated under such atmosphere was found to influence the superconducting critical temperatures of sputtered YBCO films. The effect of oxygenation of the target surface on the superconducting properties of films deposited was studied with various amounts of hydrogen gas added to the sputtering gas or residual water vapour in the vacuum system. The initial stages of YBCO films grown on SrTiO3 substrates were investigated with different film thickness. For the 1-nm-thick film flat island nuclei with one-unit-cell height were found using AFM which is consistent with the observation by XRD. Secondary phases were found to appear in the 2-nm-thick film. The effect of secondary phase precipitates on the superconducting properties and surface morphology of the films is discussed. Spiral growths were found to appear in films with thicknesses larger than 24nm, and their origin is discussed. To study the effect of substrate lattice misfit on the initial stages of film growth, NdGaO3 substrates were chosen.
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Wright, Jason. "Design and Implementation of DC Magnetron Sputter Deposition System and Hall Effect System Via LabView." Ohio University / OhioLINK, 2015. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1417605695.

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Guo, Ting-Ying, and 郭亭瑩. "Reactive DC Sputter Deposition of Tungsten Oxide Films with its Plasma Parameter Effect on the Microstructure and Electrochromic Properties." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/97946296624013085741.

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碩士
逢甲大學
材料科學所
93
Tungsten with various valences can form non-stoichiometric WO3-x which can be applied as gas sensor, photocatalytic materials and electrochromic mateials. Due to its high transmittance, excellent coloration efficiency, reversibility, low cost, longer durability and non- toxicity, it has been made electrochromic device early. In this study, tungsten oxide was deposited by reactive DC magnetron sputtering at different target currents and oxygen partial pressures. A variety of plasma diagnostics are used to correlate discharge parameters with microstructure and electrochromic properties of the deposited films. Experimental results show that when the oxygen partial ratio reaches a value of 37 %, it causes the increase of target voltage to a maximum critical value of 480 V at a fixed target current of 0.3 A, while it reaches 565 V when increasing oxygen partial ratio to the value of 65 % at a fixed target current of 1.0 A. This implies the critical target poisoning occurs at different oxygen partial ratio when different target current were used. W, Ar*, Ar+ and O2+ were found as the main species in the discharge, which the former three species give a manifest decrease at higher oxygen partial ratio, while O2+ monotonically increases indicating the overall increasing in ion density of the discharge is mainly contributed by such species. All over the range of oxygen partial ratio and it exhibit a fine columnar nano-structure, regardless of the target current. This is attributed to the higher crystal formation energy required by tungsten oxide crystal. Film growth rate strongly depends on the oxygen partial ratio and target current. Maximum growth rate occur to a certain oxygen partial ratio nearly the critical target poisoning point at each target current. This is governed by the difference of molar volume ratio of tungsten and its oxide to bring its positive effect, over the target poisoning point is then dominated by the decreased sputter yield. The valence state of tungsten in the deposited films, determined from Raman spectrum, is shown to be dependent on the oxygen partial ratio.Maximum amount of four and five valenced tungsten can be found in the deposited films by using critical target poisoning oxygen partial pressure, eg. oxygen partial ratio to the value of 65 % at the target current of 1.5 A, where maximum transmittance change and optical density of 35.4 % and 0.29, respectively, were obtained.
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Sumesh, M. A. "Investigations On The Effect Of Process Parameters On The Composition Of DC Magnetron Sputter Deposited NiTi Shape Memory Alloy Thin Films." Thesis, 2005. http://etd.iisc.ernet.in/handle/2005/1459.

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Chang, Chih-Wen, and 張智文. "Smoother Substrate Deposition Designs and Process Emulations of DC Magnetron Sputters." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/34427788265232219316.

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碩士
國立中山大學
電機工程學系研究所
100
To smooth the substrate depositions of DC magnetron sputter (MS), such that the supplementary electrical and mechanical adjustment efforts can be alleviated, a refinement scheme that can be applied directly to the existing DC MS will be introduced. By properly controlling the magnetic and electric fields inside the vacuum chamber, trajectories of those atoms that are sputtered from the target surface can be more spread out. In addition, with the resultant higher plasma density, chance of collisions among the sputtered atoms and those Ar ions in the plasma will also be increased, hence the resulting distributions of target atoms deposited on the substrate surface will certainly be evened out. To further confirm such concepts, a rational emulating process that can explore both the atom sputtering process from the target and those collisions at the chamber with different three-dimensional magnetic and electric field environments is also developed. Thus the associated performance investigations on the DC MS with different magnetron arrangements can then be conveniently carried out.
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Book chapters on the topic "DC Sputter Deposition"

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Selinder, T. I., G. Larsson, U. Helmersson, P. Olsson, J. E. Sundgren, S. Rudner, and L. D. Wernlund. "Stoichiometry and Deposition Rate of DC Magnetron Sputtered Y-Ba-Cu-O Thin Films as a Function of Target Presputtering Time." In High-T c Superconductors, 335–39. Boston, MA: Springer US, 1988. http://dx.doi.org/10.1007/978-1-4899-0846-9_46.

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Conference papers on the topic "DC Sputter Deposition"

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Adair, Robert, and Bryant Hichwa. "Questions to Consider in the Design of an AC-Sputter System." In Optical Interference Coatings. Washington, D.C.: Optica Publishing Group, 1997. http://dx.doi.org/10.1364/oic.1998.mc.1.

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In the past several years there has been a renewed effort among optical thin film researchers to improve reactive sputtering with either AC or pulsed-DC technology. These related technologies allow one to deposit insulating materials such as SiO2 and Al2O3 in a sputter process that uses metal targets with planar magnetrons. This ability to sputter insulating materials at high rates without arcing represents a breakthrough in technology. Since the invention of the DC magnetron in 1973, arcing has always been one of the limiting factors in reactive sputter deposition. In a 1988 paper, Este and Westwood1 demonstrated an arc reduction technique in which they applied an alternating square wave voltage to a pair of rectangular sputter targets at a frequency in the 100kHz range. Since then a number of researchers have reported on similar arc reduction techniques which allow the deposition of defect free films at DC sputter rates. The results of their work are evident in the number of papers and symposium presentations on AC sputtering and the number of systems currently being set up to sputter oxide coatings reactively. As part of this presentation we will review the current state of the art.
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Vernon, S. P., D. G. Stearns, and R. S. Rosen. "Ion-Assisted Sputter Deposition of Mo-Si Multilayers." In Physics of X-Ray Multilayer Structures. Washington, D.C.: Optica Publishing Group, 1992. http://dx.doi.org/10.1364/pxrayms.1992.md4.

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Mo-Si multilayer (ML) structures fabricated using DC magnetron sputtering in an Ar plasma show a transition from layer to columnar growth as the deposition pressure is increased above ~1 mTorr. The dominant effect of the increased deposition pressure is the increased thermalization of Ar neutrals, reflected in charge exhange collisions with the sputtering target, striking the substrate surface. At high deposition pressure there is less energy deposited at the substrate surface which, in turn, modifies the adatom mobility. These effects markedly impact the layer morphology. The layers are observed to have significantly increased roughness at higher deposition pressures. Consequently, the x-ray optical properties of the ML coatings are strongly effected. The measured normal incidence reflectivity at 130 Å decreases from ~60% to 14% as the deposition pressure is raised from 2.5 to 10 mTorr [1].
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Vernon, S. P., D. G. Stearns, and R. S. Rosen. "Structural Modification of Mo-Si X-Ray Multilayer Mirrors: Ion-Assisted Sputter Deposition." In Soft X-Ray Projection Lithography. Washington, D.C.: Optica Publishing Group, 1992. http://dx.doi.org/10.1364/sxray.1992.tub3.

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Pond, Bradley J., Tu Du, J. Sobczak, Charles K. Carniglia, and Forrest L. Williams. "Low-pressure reactive dc-magnetron sputter deposition of metal-oxide thin films." In Laser-Induced Damage in Optical Materials: 1991, edited by Harold E. Bennett, Lloyd L. Chase, Arthur H. Guenther, Brian E. Newnam, and M. J. Soileau. SPIE, 1992. http://dx.doi.org/10.1117/12.60124.

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"DC-Dual-Anode Reactive Sputter Deposition of Transparent Dielectrics with Low Substrate Heating." In SVC TechCon 2016. Society of Vacuum Coaters, 2016. http://dx.doi.org/10.14332/svc16.proc.0054.

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Oliver, Greig, Jonathan Pomfret, Des Gibson, Lewis Fleming, Sam Ahmadzadeh, Greg Mcgann, Shigeng Song, Parnia Navabpour, Hailin Sun, and Peter Mackay. "High throughput low cost closed field magnetron sputter deposition of durable reflectors based on dielectric overcoated metal for application in non-dispersive infrared gas sensors." In Optical Interference Coatings. Washington, D.C.: Optica Publishing Group, 2022. http://dx.doi.org/10.1364/oic.2022.wd.4.

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Optical & mechanical properties of closed-field magnetron pulsed DC sputter deposited Al, Au & Ag with Al2O3 protective layer are presented. Results show optical & durability performance suitable for use within NDIR optical gas sensors.
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Pinto, H. M., R. G. Jasinevicius, and G. A. Cirino. "A method for deposition rate estimation on a low-cost home-built DC sputter system." In 2022 36th Symposium on Microelectronics Technology (SBMICRO). IEEE, 2022. http://dx.doi.org/10.1109/sbmicro55822.2022.9881038.

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Chun, Youngjae, Daniel S. Levi, K. P. Mohanchandra, and Gregory P. Carman. "Self-Expandable Thin Film Nitinol Endografts for Vascular Repair: Manufacturing and Short-Term Results in Swine." In ASME 2009 4th Frontiers in Biomedical Devices Conference. ASMEDC, 2009. http://dx.doi.org/10.1115/biomed2009-83048.

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A thin film nitinol covered endograft for vessel treatment was manufactured and in vivo swine testing was performed. Thin film nitinol graft material was fabricated by DC sputter deposition and stress-strain behavior and DSC characteristics were investigated. Micro size patterns were fabricated by MEMS technology in order to promote endothelial layer growth. In-vivo studies in swine were conducted to evaluate deployment, placement and patency of the implanted stent device.
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Chun, Youngjae, Daniel S. Levi, K. P. Mohanchandra, and Gregory P. Carman. "Thin Film Nitinol Microstent for Aneurysm Occlusion." In ASME 2008 Conference on Smart Materials, Adaptive Structures and Intelligent Systems. ASMEDC, 2008. http://dx.doi.org/10.1115/smasis2008-389.

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This film nitinol produced by sputter deposition was used in the design of microstents intended to treat small vessel aneurysms. Thin film microstents were fabricated by “hot-target” DC sputter deposition. Both stress-strain curves and DSC curves were generated for the film used to fabricate stents. The films used for stents had an Af temperatures of approximately 36 degrees allowing for body activated response from a micro-catheter. The ten micron film was only slightly radio-opaque; thus, a Td marker was attached to the stents to guide fluoroscopic delivery. Thin film microstents were tested in a flow loop with and without nitinol support skeletons to given additional radial support. Stents could be compressed into and easily delivery in < 3 Fr catheters. Theoretical frictional and wall drag forces on a thin film nitinol small vessel vascular stent were calculated and the radial force exerted by thin film stents was evaluated theoretically and experimentally. In-vivo studies in swine confirmed that thin film nitinol microstents could be deployed accurately and consistently in the swine cranial vasculature.
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Guenther, Karl H., and Walter T. Pawlewicz. "Microstructural and physicochemical Investigations of sputtered dielectric multilayers." In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1986. http://dx.doi.org/10.1364/oam.1986.tur3.

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Dielectric multilayer coatings of SiO2 and Si3N4 were prepared by reactive rf diode sputtering and by reactive dc magnetron sputtering on glass substrates and, in the latter case, also on plastic substrates. Both types of coating show very good environmental stability which surpasses that of conventional vapor-deposited coatings. It is generally assumed that sputtered films have a higher packing density which makes them less susceptible to water penetration. Transmission electron micrographs of cross-sectional replicas of these multilayer structures indeed show a denser columnar microstructure of the individual Si3N4 films compared with many conventional vapor-deposited thin films. But since the microstructure is still columnar, voids must also exist in these films. Hence, other mechanisms than just densification may contribute to the improved resistance of the sputtered coatings to water penetration. One possible explanation is that the plasma discharge which is inherent to the sputtering process has made the thin-film material hydrophobic, so that the voids between the columns in the film are not able to adsorb water. The actual process by which this occurs may be the plasma polymerization of residual hydrocarbons in the vacuum chamber during the sputter deposition of the dielectric films.
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