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Academic literature on the topic 'Cvd'

Author: Grafiati

Published: 4 June 2021

Last updated: 28 June 2025

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Journal articles on the topic "Cvd"

1

Jadoon, Adil, Anna V. Mathew, Jaeman Byun, et al. "Gut Microbial Product Predicts Cardiovascular Risk in Chronic Kidney Disease Patients." American Journal of Nephrology 48, no. 4 (2018): 269–77. http://dx.doi.org/10.1159/000493862.

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Background: The gut microbiota is altered in patients with chronic kidney disease (CKD), and cardiovascular risk increases with progressive CKD. This study examined the potential link between short chain fatty acids (SCFAs), which are produced by the gut microbiota, and cardiovascular outcomes in patients with CKD. Methods: SCFAs were measured using a targeted liquid chromatography-mass spectrometry platform in baseline plasma samples from 214 patients with CKD enrolled in the Clinical Phenotyping Resource and Biobank Core; 81 patients with coronary artery disease (CAD) and 133 without CAD were randomly assigned to training and validation subsets. The primary outcome was a history of CAD and the secondary outcome was a composite history of cardiovascular disease (CVD) at enrollment. Results: We found significantly higher levels of the SCFA valerate among patients with CAD as compared with patients without CAD in the training set (p < 0.001). The valerate concentrations were also significantly higher among subjects with composite outcomes of CVD compared to those without CVD (p = 0.006). These results were subsequently replicated in the validation set. Logistic regression analysis revealed a strong independent association between plasma valerate levels and CVD in both training and validation sets. When valerate was added to the base clinical model comprising of diabetes, hypertension, urinary protein-creatinine ratio, and estimated glomerular filtration rate, it increased the c-statistics for predicting CVD from 0.68 to 0.79 (p = 0.02) in the training set, an observation which was confirmed in the validation set. Conclusion: This study provides evidence for alterations in gut-microbiota-derived SCFAs with advancing CKD, demonstrates the association of higher plasma valerate levels with pre-existing CVD, and reveals areas for future exploration of cardiovascular risk in patients with CKD.

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Butcko, Andrew J., Ashley K. Putman, and Emilio P. Mottillo. "The Intersection of Genetic Factors, Aberrant Nutrient Metabolism and Oxidative Stress in the Progression of Cardiometabolic Disease." Antioxidants 13, no. 1 (2024): 87. http://dx.doi.org/10.3390/antiox13010087.

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Cardiometabolic disease (CMD), which encompasses metabolic-associated fatty liver disease (MAFLD), chronic kidney disease (CKD) and cardiovascular disease (CVD), has been increasing considerably in the past 50 years. CMD is a complex disease that can be influenced by genetics and environmental factors such as diet. With the increased reliance on processed foods containing saturated fats, fructose and cholesterol, a mechanistic understanding of how these molecules cause metabolic disease is required. A major pathway by which excessive nutrients contribute to CMD is through oxidative stress. In this review, we discuss how oxidative stress can drive CMD and the role of aberrant nutrient metabolism and genetic risk factors and how they potentially interact to promote progression of MAFLD, CVD and CKD. This review will focus on genetic mutations that are known to alter nutrient metabolism. We discuss the major genetic risk factors for MAFLD, which include Patatin-like phospholipase domain-containing protein 3 (PNPLA3), Membrane Bound O-Acyltransferase Domain Containing 7 (MBOAT7) and Transmembrane 6 Superfamily Member 2 (TM6SF2). In addition, mutations that prevent nutrient uptake cause hypercholesterolemia that contributes to CVD. We also discuss the mechanisms by which MAFLD, CKD and CVD are mutually associated with one another. In addition, some of the genetic risk factors which are associated with MAFLD and CVD are also associated with CKD, while some genetic risk factors seem to dissociate one disease from the other. Through a better understanding of the causative effect of genetic mutations in CMD and how aberrant nutrient metabolism intersects with our genetics, novel therapies and precision approaches can be developed for treating CMD.

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Wang, Hanghang, Patrick H. Pun, Lydia Kwee, et al. "Apolipoprotein L1 Genetic Variants Are Associated with Chronic Kidney Disease but Not with Cardiovascular Disease in a Population Referred for Cardiac Catheterization." Cardiorenal Medicine 7, no. 2 (2016): 96–103. http://dx.doi.org/10.1159/000453458.

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Background: While the association between APOL1 genetic variants and chronic kidney disease (CKD) has been established, their association with cardiovascular disease (CVD) is unclear. This study sought to understand CKD and cardiovascular risk conferred by APOL1 variants in a secondary cardiovascular prevention population. Methods: Two risk variants in APOL1 were genotyped in African-Americans (n = 1,641) enrolled in the CATHGEN biorepository, comprised of patients referred for cardiac catheterization at Duke University Hospital, Durham, NC, USA (2001-2010). Individuals were categorized as noncarriers (n = 722), heterozygote (n = 771), or homozygote carriers (n = 231) of APOL1 risk alleles. Multivariable logistic regression and Cox proportional hazards models adjusted for CVD risk factors were used to assess the association between APOL1 risk variants and prevalent and incident CKD, prevalent coronary artery disease (CAD), incident CVD events, and mortality. Results: The previously identified association between APOL1 variants and prevalent CKD was confirmed (OR: 1.85, 95% CI: 1.33-2.57, p = 0.0002). No statistically significant associations were detected between APOL1 variants and incident CKD or prevalent CAD, incident CVD events or mortality. Age, type 2 diabetes, and ejection fraction at baseline were significant clinical factors that predicted the risk of incident CKD in a subgroup analysis of APOL1 homozygous individuals. Conclusion:APOL1 genetic variants are not associated with CAD or incident CVD events in a cohort of individuals with a high burden of cardiometabolic risk factors. In individuals with homozygous APOL1 status, factors that predicted subsequent CKD included age, presence of type 2 diabetes, and ejection fraction at baseline.

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Solmi, M., N. Veronese, B. Beatrice, et al. "Prevalence, incidence and comparative meta-analysis of all-cause and specific-cause cardiovascular disease in patients with serious mental illness." European Psychiatry 41, S1 (2017): S319—S320. http://dx.doi.org/10.1016/j.eurpsy.2017.02.238.

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Patients with severe mental illness (SMI) have been described at higher risk of cardiovascular disease (CVD). The aim of this systematic review and meta-analysis was to quantify prevalence, incidence, cross-sectional association and longitudinal increased risk of coronary heart disease (CHD), stroke, transient ischemic attack and cerebrovascular disease (CBVD), heart failure (HF), peripheral vascular disease (PVD), death due to CVD, and any CVD in patients with SMI. We included 92 studies, with a total population of 3,371,461 patients (BD = 241,226, MDD = 476,102, SCZ = 1,721,586, SMI = 932,547) and 113,925,577 controls. Pooled prevalence of any CVD in SMI was 9.9% (95% CI = 7.4–13.3) (33 studies, 360,144 patients). Compared to controls, after adjusting for a median of 7 confounders, SMI was associated with higher risk of CVD in cross-sectional studies, OR:1.53 (95% CI = 1.27–1.83) (11 studies), with CHD OR: 1.51 (95% CI = 1.47–1.55) (5 studies), with CBVD OR: 1.42 (95% CI = 1.21–1.66) (6 studies), and tended to be associated with HF OR: 1.28 (95% CI = 0.99–1.65) (4 studies). Cumulative incidence was 3.6 CVD events in a median follow-up period of 8.4 years (range: 1.76–30). After considering a median of 6 confounders, SMI was associated with higher longitudinal risk of CVD in longitudinal studies HR: 1.78 (95% CI = 1.6, 1.98) (31 studies), of CHD: HR: 1.54 (95% CI 1.30–1.82) (18 studies), of CBVD HR: 1.64 (95% CI 1.26–2.14) (11 studies), of HF HR:2.10 (95% CI 1.64–2.70) (2 studies), of PVD, unadjusted RR: 3.11 (95% CI 2.46–3.91) (3 studies), of death due to CVD, HR 1.85 (95% CI 1.53–2.24) (16 studies). In this meta-analysis, the association between SMI and CVD has been quantified in a world representative sample; we suggest prevention of CVD should be warranted as standard care in SMI.Disclosure of interestThe authors have not supplied their declaration of competing interest.

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Gujral, Unjali P., Ram Jagannathan, Siran He, et al. "Association between varying cut-points of intermediate hyperglycemia and risk of mortality, cardiovascular events and chronic kidney disease: a systematic review and meta-analysis." BMJ Open Diabetes Research & Care 9, no. 1 (2021): e001776. http://dx.doi.org/10.1136/bmjdrc-2020-001776.

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IntroductionWe conducted a systematic review and meta-analysis to evaluate the updated evidence regarding prediabetes for predicting mortality, macrovascular and microvascular outcomes.Research design and methodsWe identified English language studies from MEDLINE, PubMed, OVID and Cochrane database indexed from inception to January 31, 2020. Paired reviewers independently identified 106 prospective studies, comprising nearly 1.85 million people, from 27 countries. Primary outcomes were all-cause mortality (ACM), cardiovascular mortality (CVDM), cardiovascular disease (CVD), coronary heart disease (CHD) and stroke. Secondary outcomes were heart failure, chronic kidney disease (CKD) and retinopathy.ResultsImpaired glucose tolerance was associated with ACM; HR 1.19, 95% CI (1.15 to 1.24), CVDM; HR 1.21, 95% CI (1.10 to 1.32), CVD; HR 1.18, 95% CI (1.11 to 1.26), CHD; HR; 1.13, 95% CI (1.05 to 1.21) and stroke; HR 1.24, 95% CI (1.06 to 1.45). Impaired fasting glucose (IFG) 110–125 mg/dL was associated with ACM; HR 1.17, 95% CI (1.13 to 1.22), CVDM; HR 1.20, 95% CI (1.09 to 1.33), CVD; HR 1.21, 95% CI (1.09 to 1.33), CHD; HR; 1.14, 95% CI (1.06 to 1.22) and stroke; HR 1.22, 95% CI (1.07 to 1.40). IFG 100–125 mg/dL was associated with ACM; HR 1.11, 95% CI (1.04 to 1.19), CVDM; HR 1.14, 95% CI (1.03 to 1.25), CVD; HR 1.15, 95% CI (1.05 to 1.25), CHD HR; 1.10, 95% CI (1.02 to 1.19) and CKD; HR; 1.09, 95% CI (1.01 to 1.18). Glycosylated hemoglobin A1c (HbA1c) 6.0%–6.4% was associated with ACM; HR 1.30, 95% CI (1.03 to 1.66), CVD; HR 1.32, 95% CI (1.00 to 1.73) and CKD; HR 1.50, 95% CI (1.32 to 1.70). HbA1c 5.7%–6.4% was associated with CVD HR 1.15, 95% CI (1.02 to 1.30), CHD; HR 1.28, 95% CI (1.13 to 1.46), stroke; HR 1.23, 95% CI (1.04 to 1.46) and CKD; HR 1.32, 95% CI (1.16 to 1.50).ConclusionPrediabetes is an elevated risk state for macrovascular and microvascular outcomes. The prevention and management of prediabetes should be considered.

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Liu, Yu-Jie, Meng-Yuan Miao, Jia-Min Wang, et al. "Coffee Consumption and Incidence of Cardiovascular and Microvascular Diseases in Never-Smoking Adults with Type 2 Diabetes Mellitus." Nutrients 15, no. 18 (2023): 3910. http://dx.doi.org/10.3390/nu15183910.

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The relationship between coffee consumption and diabetes-related vascular complications remains unclear. To eliminate confounding by smoking, this study assessed the relationships of coffee consumption with major cardiovascular disease (CVD) and microvascular disease (MVD) in never-smokers with type 2 diabetes mellitus (T2DM). Included were 9964 never-smokers with T2DM from the UK Biobank without known CVD or cancer at baseline (7781 were free of MVD). Participants were categorized into four groups according to daily coffee consumption (0, 0.5–1, 2–4, ≥5 cups/day). CVD included coronary heart disease (CHD), myocardial infarction (MI), stroke, and heart failure (HF). MVD included retinopathy, peripheral neuropathy, and chronic kidney disease (CKD). Cox regression models were used to estimate hazard ratios (HRs) and 95% confidential intervals (CIs) of total CVD and MVD and the component outcomes associated with coffee consumption. During a median of 12.7 years of follow-up, 1860 cases of CVD and 1403 cases of MVD were identified. Coffee intake was nonlinearly and inversely associated with CVD (P-nonlinearity = 0.023) and the component outcomes. Compared with no coffee intake, HRs (95% CIs) associated with a coffee intake of 2 to 4 cups/day were 0.82 (0.73, 0.93) for CVD, 0.84 (0.73, 0.97) for CHD, 0.73 (0.57, 0.92) for MI, 0.76 (0.57, 1.02) for stroke, and 0.68 (0.55, 0.85) for HF. Higher coffee intake (≥5 cups/day) was not significantly associated with CVD outcomes. Coffee intake was linearly and inversely associated with risk of CKD (HR for ≥5 vs. 0 cups/day = 0.64; 95% CI: 0.45, 0.91; P-trend = 0.0029) but was not associated with retinopathy or peripheral neuropathy. Among never-smoking individuals with T2DM, moderate coffee consumption (2–4 cups/day) was associated with a lower risk of various CVD outcomes and CKD, with no adverse associations for higher consumption.

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Spanuchart, Ittikorn, Arkom Nongnuch, and Youg Liu. "Nontraditional Biomarkers for Cardiovascular Disease in Patients With Chronic Kidney Disease." Ramathibodi Medical Journal 43, no. 2 (2020): 51–60. http://dx.doi.org/10.33165/rmj.2020.43.2.230208.

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Cardiovascular disease (CVD) is the leading cause of death among patients who have chronic kidney disease (CKD). Nowadays, CKD per se is considered one of the coronary heart disease (CHD) risk equivalents. Apart from traditional CVD risk factors, there are several possible determinants for CVD in patients with CKD, for example, uremic toxins, increased inflammatory stage, abnormal bone mineral metabolism, and positive calcium balance. In this narrative review, we offer a summary of the extensively studied biomarkers for CVD in patients with CKD, including uremic toxins (p-cresol, indoxyl sulfate, and advanced glycated end products), and a novel indicator of arterial stiffness, cardio-ankle vascular index (CAVI), which is an independent prognostic predictor for CVD. For the uremic toxins, we reviewed their metabolisms, particularly, how the reduced renal function in CKD patients affect their clearance and their clearance with dialysis. Also, we pay attention to the recent evidence on how those uremic toxins contribute to CVD and their clinical associations. We do not include the possible treatment targeting at those uremic toxins. As for the novel indicator of arterial stiffness, we reviewed the clinical application of CAVI in comparison to the standard indicator for arterial stiffness, pulse wave velocity.

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Anderson, R. David, John W. Petersen, Puja K. Mehta, et al. "Prevalence of Coronary Endothelial and Microvascular Dysfunction in Women with Symptoms of Ischemia and No Obstructive Coronary Artery Disease Is Confirmed by a New Cohort: The NHLBI-Sponsored Women’s Ischemia Syndrome Evaluation–Coronary Vascular Dysfunction (WISE-CVD)." Journal of Interventional Cardiology 2019 (March 11, 2019): 1–8. http://dx.doi.org/10.1155/2019/7169275.

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Objective. In a separate, contemporary cohort, we sought to confirm findings of the original Women’s Ischemia Syndrome Evaluation (WISE). Background. The original WISE observed a high prevalence of both invasively determined coronary endothelial and coronary microvascular dysfunction (CMD) that predicted adverse events in follow-up. Methods. We comparatively studied the WISE-Coronary Vascular Dysfunction (CVD) cohort (2009-2011), with signs and symptoms of ischemia but without significant CAD, to the original WISE (1997-2001) cohort. CMD was defined as coronary flow reserve (CFR) ≤2.5, or endothelial dysfunction as epicardial coronary artery constriction to acetylcholine (ACH), or <20% epicardial coronary dilation to nitroglycerin (NTG). Results. In WISE (n=181) and WISE-CVD (n=235) women, mean age in both was 54 years, and 83% were white (WISE) vs 74% (WISE-CVD, p=0.04). Use of hormone replacement therapy was less frequent in WISE-CVD vs WISE (46% vs 57%, p=0.026) as was presence of hypertension (40% vs 52%, p=0.013), hyperlipidemia (20% vs 46%, p<0.0001), and smoking (46% vs 56%, p=0.036). Similar rates were observed in WISE-CVD and WISE cohorts for CMD (mean CFR 2.7±0.6 vs 2.6±0.8, p=0.35), mean change in diameter with intracoronary ACH (0.2±10.0 vs 1.6±12.8 mm, p=0.34), and mean change in diameter with intracoronary NTG (9.7±13.0 vs 9.8±13.5 mm, p=0.94), respectively. Conclusions. This study confirms prevalence of CMD in the contemporary WISE-CVD cohort similar to that of the original WISE cohort, despite a lower risk factor burden in WISE-CVD. Because these coronary functional abnormalities predict major adverse cardiac events, clinical trials of therapies targeting these abnormalities are indicated.

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Shifris, I. M., I. O. Dudar, Е. К. Krasiuk, and А. Yu Shymova. "Predictors of cardiovascular disease in patients with chronic kidney disease VD stage treated with hemodialysis." Medicni perspektivi (Medical perspectives) 26, no. 2 (2021): 59–66. http://dx.doi.org/10.26641/2307-0404.2021.2.234513.

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The aim of the study was to establish the frequency and possible predictors of cardiovascular disease (CVD) in chronic kidney disease (CKD) VD stage patients, treated with hemodialysis, based on results of prospective observation. The prospective observational cohort study included 223 patients with CKD V D stage who were treated with hemodialysis (HD) during 2012-2019. The research was carried out in two stages. At the first stage, main demographic, laboratory and clinical characteristics of patients, including the frequency of CVD, at the time of beginning the study were examined. At the second stage, based on prospective studying of the dynamics of the frequency of CV pathology, an assessment of potential predictors of CVD in CKD V D stage patients treated with HD was made. Patients’ characteristics determined at the beginning of the study were used as possible predictors. The average duration of prospective study was 35.5±17.8 months, cumulative – 579.3 patient-years. For determination of prognostic factors of CVD events, ROC-analysis, univariate and multivariate Cox proportional hazard regression analysis were done. The primary endpoint (newly diagnosed CVDs) was assesses at the end of the study. Statistical processing of the obtained results was performed using the MedCalc Statistical Software, version 19.3. During the study period, a significant increase of all CVD frequency by 80% (р<0.001) was stated, more than twice – of coronary artery disease (CAD; р<0.001) and atrial fibrillation (AF; р=0.0039). The incidence rate of CVD and CAD was 9.8 and 9.15 per 100-patient-years, respectively. The primary endpoint was observed in 92 (41.26%) patients: newly diagnosed CAD – in 53 patients, heart failure – in 12 patients, AF – in 9 patients, acute myocardial infarction – in 8 patients, other heart diseases – in 10 patients. Independent predictors on increased CVD risk in chronic kidney disease VD stage patients treated with hemodialysis are: age over 35 years, use of a central venous catheter as a vascular access during HD initiation, history of nasal MRSA collonization. In the other hand, serum albumin level of more than 36,6 g/l was associated with reduced risk.

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Shifris, I.M., I.O. Dudar, Е.К. Krasiuk, and А.Yu. Shymova. "Predictors of cardiovascular disease in patients with chronic kidney disease VD stage treated with hemodialysis." Medicni perspektivi 26, no. 2 (2021): 59–66. https://doi.org/10.26641/2307-0404.2021.2.234513.

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The aim of the study was to establish the frequency and possible predictors of cardiovascular disease (CVD) in chronic kidney disease (CKD) VD stage patients, treated with hemodialysis, based on results of prospective observation. The prospective observational cohort study  included 223 patients with CKD V D stage who were treated with hemodialysis (HD) during 2012-2019. The research was carried out in two stages. At the first stage, main demographic, laboratory and clinical characteristics of patients, including the frequency of CVD, at the time of beginning the study were examined. At the second stage, based on prospective studying of the dynamics of the frequency of CV pathology, an assessment of potential predictors of CVD in CKD V D stage patients treated with HD was made. Patients’ characteristics determined at the beginning of the study were used as possible predictors. The average duration of prospective study was 35.5±17.8 months, cumulative – 579.3 patient-years. For determination of prognostic factors of CVD events, ROC-analysis, univariate and multivariate Cox proportional hazard regression analysis were done. The primary endpoint (newly diagnosed CVDs) was assesses at the end of the study.  Statistical processing of the obtained results was performed using the MedCalc Statistical Software, version 19.3. During the study period, a significant increase of all CVD frequency by 80% (р<0.001) was stated, more than twice – of coronary artery disease (CAD; р<0.001) and atrial fibrillation (AF; р=0.0039). The incidence rate of CVD and CAD was 9.8 and 9.15 per 100-patient-years, respectively. The primary endpoint was observed in 92 (41.26%) patients: newly diagnosed CAD – in 53 patients, heart failure – in 12 patients, AF – in 9 patients, acute myocardial infarction – in 8 patients, other heart diseases – in 10 patients. Independent predictors on increased CVD risk in chronic kidney disease VD stage patients treated with hemodialysis are: age over 35 years, use of a central venous catheter as a vascular access during HD initiation, history of nasal MRSA collonization. In the other hand, serum albumin level of more than 36,6 g/l was associated with reduced risk.

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Dissertations / Theses on the topic "Cvd"

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Dupel‎, Pascal. "CVD/CVI pulsée du pyrocarbone : application aux matériaux composites thermostructuraux." Bordeaux 1, 1993. http://www.theses.fr/1993BOR10552.

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Stenberg, Pontus. "Fluorinated SiC CVD." Doctoral thesis, Linköpings universitet, Halvledarmaterial, 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-133832.

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For the emerging semiconductor material silicon carbide (SiC) used in high power devices, chemical vapor deposition (CVD) is the most prominent method to create the electrically active SiC epitaxial layers in the device. The process of growing such epitaxial layers is to use a hydrocarbon and silane diluted in hydrogen flow through a hot chamber where chemical reactions take place in such manner that Si and C finally deposit on the surface creating epitaxial SiC. The addition of chlorine (Cl) to the process has been thoroughly investigated due to its ability to reduce homogeneous nucleation in the gas phase attributed to the stronger Si-Cl bond compared to the Si-Si bond. In this thesis the fluorinated chemistry has been investigated, since the Si-F bond is even stronger than the Si-Cl bond and the fluorinated chemistry for SiC CVD has remained poorly understood. Using SiF4 as Si precursor in growth experiments combined with thermal equilibrium calculations of gas phase composition and quantum chemical computations of the surface chemistry first the silicon chemistry in the CVD process has been probed. It is shown that while growth rates on the order of 35 µm/h can be achieved with a fluorinated chemistry, the deposition chemistry is very sensitive to the mass flows of the precursors and not as robust as the chlorinated CVD chemistry which routinely yields 100 µm/h over wide conditions. By using the position for the onset of epitaxial growth along the gas flow direction as a new measurable, together with modeling, it is conclude that SiF is the main Si growth species with SiHF as a minor Si species contributing to growth. The carbon chemistry in a fluorinated SiC CVD process has been probed by a similar approach. Here it is found that the slow kinetics of the SiF4 molecule needs to be matched by a carbon precursor with comparable slow kinetics. It is shown that methane is a suitable carbon precursor in combination with SiF4. Before a fluorinated CVD chemistry can be adopted in device processing, the effect of fluorine on the dopant incorporation must be understood since dopant incorporation is of paramount importance in semiconductor manufacturing. Dopant incorporation studies for n-type doping with N using N2 and p-type doping with Al using TMAl in fluorinated CVD of homoepitaxial SiC are presented. It is found to be possible to control the doping in SiC epitaxial layers when using a fluorinated CVD chemistry for both n- and p-type material using the C/Si ratio as in standard SiC CVD. However, large area doping uniformity seems to be a challenge for a fluorinated CVD chemistry, most likely due to the very strong Si-F and Al-F bonds. It is found that no additional optically or electrically active defects are created due to the use of fluorine in the CVD process. Finally, the fluorinated chemistry is compared to the chlorinated and brominated chemistries for SiC CVD and an overall model for halogen addition to SiC CVD is presented.

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Ćmiel, Milan. "VÝVOJ NÁSTROJŮ S PKD, CVD VRSTVOU A CVD POVLAKEM PRO DOKONČOVÁNÍ DĚR." Master's thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2009. http://www.nusl.cz/ntk/nusl-228661.

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The aim of the thesis is to design, conduct and assess an experiment seeking to look into the utility properties of recent tools manufactured by HAM-FINAL. The tools include polycrystalline diamond (PCD) and CVD diamond cutting edges. In the theoretical part, the attention is devoted to cutting materials with an emphasis on diamond materials, as well as to issues associated with the wearing of the cutting tools, requirements specified for precision of bores and tools used in the manufacture of precision bores. The paper further provides an overview of a selection of world’s leading manufacturers of PCD blanks, CVD diamond coatings, CVD diamond layers and reamers with PCD cutting edges.

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Herron, Christopher Robert. "CVD synthesis of graphene." Thesis, Durham University, 2011. http://etheses.dur.ac.uk/908/.

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The research into the subject of graphene has soared over the past few years. Due to the exceptional nature of some of its properties, it has become ever popular in the field of nanotechnology. The use of graphene for various electronics applications have been displayed using graphene that can be exfoliated or grown via several techniques. However, the scalability of these methods do not allow for bulk synthesis, known in the case of other graphitic nanomaterials like fullerenes and carbon nanotubes. For realistic applications, graphene has to be made in large quantities at a reasonable cost for use in, for example, solar cells, FETs, chemical sensors and engineering composites. Here successful attempts have been made to synthesise few layer graphene via bulk methodologies commonly used in the manufacture of carbon nanotubes, using relatively inexpensive precursor materials. Spray pyrolysis, a simple and scalable technique for the manufacture of few layer graphene using ethanol and various sodium precursors was demonstrated, which showed polymer composite, electronic device and transparent thin film application. Few layer graphene was grown using a bimetallic catalyst of sodium and cobalt. Addition of the sodium caused a visual decrease in the amount of carbon deposited from ethanol chemical vapour deposition. The product when observed using the scanning and transmission electron microscope was shown to be made up of turbostatic few layer graphene platelets. Growth of single and few layer graphene was demonstrated using copper nanoribbons and cobalt nanosheets as catalyst templates. These when incorporated onto inert support material, produced single and few layer graphene in a process that is deemed scalable and compatible with present industrial CVD reactors used for making carbon nanotubes.

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Procházka, Pavel. "Příprava grafenu metodou CVD." Master's thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2012. http://www.nusl.cz/ntk/nusl-230205.

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This diploma thesis is mainly focused on the fabrication of graphene layers on the copper foil by the Chemical Vapor Deposition (CVD). For this purpose the high-temperature chamber for the production of the graphene was completed and fully automated. The production of the high area graphene on the copper foil was experimentally achieved. The Raman microscopy and X-ray photoelectron spectroscopy measurements proved that the produced graphene is mostly a monolayer. Graphene layer was transferred on non-conductive substrate.

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Lahouidak, Jamal 1er. "Etude de couches minces de TiO2 déposées par CVD et CVD assistée plasma." Montpellier 2, 1991. http://www.theses.fr/1991MON20162.

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L'etude de depot d'oxyde de titane en couches minces par les deux techniques cvd et pacvd en vue de realisation des membranes inorganiques, necessite la maitrise de la texture des couches sur le support de membrane pour l'adapter aux conditions de fonctionnement. En cvd thermique, la texture des couches de tio#2 depend de la pression de travail et de la temperature du substrat. Cette texture est colonnaire a basse pression et granuleuse a des pressions plus elevees pour une temperature de 600c. En pacvd, les couches sont equivalentes au point de vue texture, elles sont amorphes et compactes. La morphologie des couches obtenues par pacvd est fonction de la nature de la surface du substrat. La puissance est un parametre qui peut etre responsable de la vitesse de depot en pacvd. Le domaine de la filtration de solution utilise est l'ultrafiltration et la nanofiltration

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Mouchon, Arnaud. "Mécanismes de pyrolyse des hydrocarbures et dépôt de pyrocarbone par CVD/CVI." Bordeaux 1, 2004. http://www.theses.fr/2004BOR12916.

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"Une étude des mécanismes de pyrolyse des hydrocarbures, conduisant au dépôt de pyrocarbone par CVD/CVI, a été menée suivant une double approche expérimentale/numérique. A partir du précurseur propane, la phase gazeuse a été analysée in-situ (spectroscopie IRTF) en cours d'infiltration et en ligne (CPG) en CVD ou CVI : le rôle des espèces en C2 dans la formation du pyrocarbone dit " faiblement anisotrope" et celui des espèces en C3 dans celle du pyrocarbone dit "laminaire colonnaire" ont été identifiés. Les caractérisations micro -et nano-texturales (MOLP, MET et spectroscopie Raman) des dépôts réalisés ont permis d'établir des mécanismes de croissance distincts pour chacune des formes de pyrocarbone laminaire. Des mécanismes homogènes détaillés décrivant la pyrolyse du propane et du méthane ont été introduits dans diverses modélisations numériques de réacteurs 0D et 1D. Ils ont été validés par confrontation avec différentes analyses expérimentales de la phase gazeuse. Des corrélations ont été établies entre la composition de la phase gazeuses déterminée par les modèles et le dépôt des microtextures principales. Les précurseurs effectifs à nombre impair de carbone semblent ainsi favoriser l'anisotropie du pyrocarbone, tandis qu'à l'inverse un précurseur effectif à nombre pair de carbone conduit à la formation de défauts et donc à une chute d'anisotropie. Sur cette base, des schémas réactionnels ont été pjroposés pour décrire la formation des microtextures principales déposées à partir de propane et de méthane. "

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Majdi, Saman. "Electronic Characterization of CVD Diamond." Licentiate thesis, Uppsala University, Electricity, 2010. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-116433.

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<p>Diamond is a promising material for high-power, high-frequency and hightemperatureelectronics applications, where its outstanding physical propertiescan be fully exploited. It exhibits an extremely high energy gap, veryhigh carrier mobilities, high breakdown field strength, and the highest thermalconductivity of any wide bandgap material. It could therefore producethe fastest switching, the highest power density, and the most efficient electronicdevices obtainable, with applications in the RF power, automotive andaerospace industries. Lightweight diamond devices, capable of high temperatureoperation in harsh environments, could also be used in radiationdetectors and particle physics applications where no other semiconductordevices would survive.The high defect and impurity concentration in natural diamond or polycrystallinehigh-pressure-high-temperature (HPHT) diamond substrates hasmade it difficult to establish reliable results when studying the electronicproperties of diamond. However, recent progress in the growth of high puritySingle-Crystal Chemical Vapor Deposited Diamond (SC-CVD) has openedthe perspective of applications under such extreme conditions based on thistype of artificial diamond.Despite the improvements, there are still many questions which must beanswered. This work will focus on electrical characterization of (SC-CVD)diamond by different measurements techniques such as internal photoemission,I-V, C-V, Hall and in particular, time-of-flight (TOF) carrier driftvelocity measurements. With the mentioned techniques, some importantproperties of diamond such as drift mobilities, lateral carrier transit velocities,compensation ratio and Schottky barrier heights have been investigated.Low compensation ratios (ND/NA) < 10-4 have been achieved in boron-dopeddiamond and a drift mobility of about 860 cm2 / V for the hole transit nearthe surface in a lateral TOF configuration could be measured.</p>

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Bansa, Patrice B. "Property characterization of CVD nickel." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 2001. http://www.collectionscanada.ca/obj/s4/f2/dsk3/ftp05/MQ63137.pdf.

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Pedersen, Henrik. "Chloride-based Silicon Carbide CVD." Doctoral thesis, Linköpings universitet, Materiefysik, 2008. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-15428.

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Silicon carbide (SiC) is a promising material for high power and high frequency devices due to its wide bandgap, high break down field and high thermal conductivity. The most established technique for growth ofepitaxial layers of SiC is chemical vapor deposition (CVD) at around 1550 °C using silane, SiH4, and lighthydrocarbons e g propane, C3H8, or ethylene, C2H4, as precursors heavily diluted in hydrogen. For high-voltagedevices made of SiC thick (> 100 μm), low doped epilayers are needed. Normal growth rate in SiC epitaxy is~ 5 μm/h, rendering long growth times for such SiC device structures. The main problem when trying to achievehigher growth rate by increasing the precursor flows is the formation of aggregates in the gas phase; for SiCCVD these aggregates are mainly silicon droplets and their formation results in saturation of the growth ratesince if the gas flow does not manage to transport these droplets out of the growth zone, they will eventuallycome in contact with the crystal surface and thereby creating very large defects on the epilayer making theepilayer unusable. To overcome this problem, high temperature- as well as low pressure processes have beendeveloped where the droplets are either dissolved by the high temperature or transported out of the susceptor bythe higher gas flow. A different approach is to use chloride-based epitaxy that uses the idea that the silicondroplets can be dissolved by presence of species that bind stronger to silicon than silicon itself. An appropriatecandidate to use is chlorine since it forms strong bonds to silicon and chlorinated compounds of high purity canbe purchased. In this thesis the chloride-based CVD process is studied by using first a single molecule precursor,methyltrichlorosilane (MTS) that contributes with silicon, carbon and chlorine to the process. Growth of SiCepilayers from MTS is explored in Paper 1 where growth rates up to 104 μm/h are reported together withmorphology studies, doping dependence of growth rate and the influence of the C/Si- and Cl/Si-ratios on thegrowth rate and doping. In Paper 2 MTS is used for the growth of 200 μm thick epilayers at a growth rate of 100μm/h, the epilayers are shown to be of very high crystalline quality and the growth process stable. The growthcharacteristics of the chloride-based CVD process, is further studied in Paper 3, where the approach to add HClgas to the standard precursors silane and ethylene is used as well as the MTS approach. A comparison betweenliterature data of growth rates for different approaches is done and it is found that a precursor molecule withdirect Si-Cl bonds should be more efficient for the growth process. Also the process stability and growth ratedependence on C/Si- and Cl/Si are further studied. In Paper 4 the standard growth process for growth on 4° offaxis substrates is improved in order to get better morphology of the epilayers. It is also shown that the optimizedprocess conditions can be transferred to a chloride-based process and a high growth rate of 28 μm/h wasachieved, using the HCl-approach, while keeping the good morphology. In Paper 5 chloride-based CVD growthon on-axis substrates is explored using both the HCl- and MTS-approaches. The incorporation of dopants in SiCepilayers grown by the chloride-based CVD process is studied in Papers 6 and 7 using the HCl-approach. InPaper 6 the incorporation of the donor atoms nitrogen and phosphorus is studied and in Paper 7 theincorporation of the acceptor atoms boron and aluminum. The incorporation of dopants is found to follow thetrends seen in the standard growth process but it is also found that the Cl/Si-ratio can affect the amount ofincorporated dopants.<br>Kiselkarbid (SiC) är ett fascinerande material som samtidigt är mycket enkelt och mycketkomplicerat. Det är enkelt eftersom det byggs upp av bara två sorters atomer, kisel och kol.Atomerna bygger upp kristallens struktur genom att bilda Si-C bindningar och man kan beskrivakristallstrukturen som uppbyggd av tetraedrar med en kiselatom (eller kolatom) i mitten och enkolatom (eller kiselatom) i varje hörn på tetraedern. Samtidigt är SiC komplicerat eftersomberoende på hur man staplar dessa tetraedrar kan man få olika varianter på kristallstrukturen, såkallade polytyper. Det finns drygt 200 kända polytyper av kiselkarbid, men det är dock bara enhandfull av dessa polytyper som är tekniskt intressanta. Kiselkarbid är intressant eftersom det ärett hårt material som inte heller påverkas nämnvärt av kemiskt aggressiva miljöer ellertemperaturer upp till 2000 °C; dessutom är SiC en halvledare och tack vare dess tålighet är det ettmycket bra material för elektriska komponenter för högspänningselektronik eller för användningi aggressiva miljöer. För att kunna tillverka dessa komponenter måste man kunna odla kristaller av kiselkarbid. Detfinns i princip två typer av kristallodling; i) odling av bulkkristaller, där stora kristaller odlas föratt sedan kan skivas och poleras till kristallskivor (dessa skivor benämns oftast substrat), och ii)odling av epitaxiella skikt, där man odlar ett tunt lager kristall med mycket hög renhet ovanpå ettsubstrat (ordet epitaxi kommer från grekiskans epi = ovanpå och taxis = i ordning, epitaxiellaskikt odlas alltså ovanpå ett substrat och kopierar den kristallina ordningen hos substratet). I detepitaxiella skiktet, eller epilagret som det även kallas, kan man styra den elektriskaledningsförmågan med mycket hög precision genom att blanda in små mängder orenheter iepilagret, man pratar här om att dopa halvledarkristallen. För att odla epilager av SiC använderman CVD, CVD betyder Chemical Vapor Deposition, någon riktigt bra svensk översättningfinns inte men det är en teknik för att framställa ett tunt lager av ett material genom kemiskareaktioner med gaser som startmaterial. I standard CVD-processen för odling av SiC epilager använder man silan (SiH4) som kiselkälla och lätta kolväten som eten (C2H4) eller propan (C3H8) som kolkälla. Dessa gaser späds kraftigtut i vätgas och man odlar epilagret vid ungefär 1500-1600 °C. Med denna process kan man odlaca 5 mikrometer (mikrometer = miljondelsmeter) epilager på en timme. Men för vissakomponenter behöver man ett epilager som är över 100 mikrometer tjockt, vilket görtillverkningen av sådana komponenter både tidsödande och kostsam. Ett problem som manmåste lösa för att få högre tillväxthastighet i processen är att när man ökar mängden silan,kommer kiseldroppar att bildas i gasfasen och om de kommer i kontakt med substratet blirepilagret förstört. I denna avhandling undersöks ett sätt att lösa problemet med kiseldropparnaoch därmed kunna tillåta höga tillväxthastigheter för SiC epilager. Idén är att man kan lösa uppkiseldropparna genom att tillsätta något i gasblandningen som binder starkare till kisel än kisel.En mycket bra atom att använda för detta ändamål är klor eftersom klor binder mycket starkt tillkisel. Man kallar denna process för klorid-baserad CVD. Till att börja med använde vi molekylen metyltriklorsilan (MTS), som innehåller både kol, kiseloch klor, för klorid-baserad tillväxt av SiC epilager. Genom att använda MTS lyckades vi fåtillväxthastigheter mellan 2 och 104 mikrometer i timmen. Vi har även visat att det är möjligtanvända MTS för att odla 200 mikrometer tjocka epilager med en tillväxthastighet på 100mikrometer i timmen utan att den kristallina kvalitén på epilagren försämras. Ett alternativ till attanvända MTS är att addera saltsyra (HCl) i gasform till standard processen. För att förstå denklorid-baserade processen bättre, jämfördes de olika alternativen med litteraturdata från enprocess där man istället för vanlig silan hade använt triklorsilan (TCS) för att få en klorid-baserad process. Det visade sig att MTS- och TCS-processerna krävde mindre kiselhalt i gasfasen för attfå en hög tillväxthastighet, med andra ord var de mer effektiva. Vi förklarade detta med atteftersom dessa startmolekyler har tre kisel-kol bindningar är det enkelt att bilda SiCl2 molekylen,som har visat sig vara ett viktigt mellansteg i den klorid-baserade processen, eftersom man dåbara behöver bryta kemiska bindningar. Om man istället börjar från silan och saltsyra måstekemiska reaktioner ske för att skapa kisel-kol bindningar och därmed SiCl2. När man odlar kristaller underlättar man tillväxten genom att preparera ytan på substratet medatomära steg. Om man tittar på ytan med atomär förstoring kan säga att ytan liknar en trappa,detta är bra eftersom atomerna som bygger upp epilagret gärna fastnar vid atomära steg eftersomde kan binda in till kristallen både neråt och åt sidan. Vi har optimerat standard processen för attfå bättre morfologi, alltså en finare yta, när man odlar på substrat som har mindre andel atomärasteg på ytan och visat att denna optimering går att överföra till en klorid-baserad process medhög tillväxthastighet . Vi har även visat att man kan använda den klorid-baserade processen föratt odla epilager med hög tillväxthastighet på substrat helt utan atomära steg. Slutligen har vi studerat doping av kiselkarbid vid höga tillväxthastigheter med den kloridbaseradeprocessen, både n-typ doping (där man dopar med ämnen som har fler valenselektronerän kol och kisel så att man får ett överskott av elektroner i materialet) med kväve och fosfor, ochp-typ doping (där man dopar med ämnen som har färre valenselektroner än kol och kisel så attman får ett underskott av elektroner i materialet) med bor och aluminium.

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Books on the topic "Cvd"

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Gleason, Karen K., ed. CVD Polymers. Wiley-VCH Verlag GmbH & Co. KGaA, 2015. http://dx.doi.org/10.1002/9783527690275.

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Toivo, Kodas, and Hampden-Smith Mark, eds. Chemistry of Metal CVD. VCH, 1994.

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Moran, Robert. Thin layer deposition: Highlighting CVD. Business Communications Co., 2000.

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Bansa, Patrice B. Property characterization of CVD nickel. National Library of Canada, 2001.

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Gesheva, K. A. Chemical vapor deposition (CVD) technology. Nova Science Publishers, 2008.

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United States. National Aeronautics and Space Administration., ed. An overview of CVD processes. National Aeronautics and Space Administration, 1986.

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Robert, Moran. Thin layer deposition: Highlighting CVD. Business Communications Co., 1996.

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Syrkin, V. G. CVD-metod: Khimicheskoe parofaznoe osazhdenie. "Nauka", 2000.

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M, Kazaroff John, Appel Marshall A, and United States. National Aeronautics and Space Administration., eds. Iridium-coated rhenium thrusters by CVD. National Aeronautics and Space Administration, 1988.

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M, Kazaroff John, Appel Marshall A, and United States. National Aeronautics and Space Administration., eds. Iridium-coated rhenium thrusters by CVD. National Aeronautics and Space Administration, 1988.

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Book chapters on the topic "Cvd"

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Aliano, Antonio, Giancarlo Cicero, Hossein Nili, et al. "Atomic Layer CVD (AL-CVD)." In Encyclopedia of Nanotechnology. Springer Netherlands, 2012. http://dx.doi.org/10.1007/978-90-481-9751-4_100042.

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Asami, Masashi. "CVD (Part 2): Plasma CVD." In Ultraclean Surface Processing of Silicon Wafers. Springer Berlin Heidelberg, 1998. http://dx.doi.org/10.1007/978-3-662-03535-1_23.

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Sekine, Makoto. "CVD (Part 3): Metal CVD." In Ultraclean Surface Processing of Silicon Wafers. Springer Berlin Heidelberg, 1998. http://dx.doi.org/10.1007/978-3-662-03535-1_24.

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Wahl, G. "CVD-Anwendungen." In Vakuumbeschichtung. Springer Berlin Heidelberg, 1993. http://dx.doi.org/10.1007/978-3-642-58008-6_10.

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Seegebrecht, P., N. Bündgens, and R. Schneider. "CVD-Verfahren." In Prozeßtechnologie. Springer Berlin Heidelberg, 1991. http://dx.doi.org/10.1007/978-3-662-09540-9_7.

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Dobkin, Daniel M., and Michael K. Zuraw. "CVD Films." In Principles of Chemical Vapor Deposition. Springer Netherlands, 2003. http://dx.doi.org/10.1007/978-94-017-0369-7_7.

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Dobkin, Daniel M., and Michael K. Zuraw. "CVD Reactors." In Principles of Chemical Vapor Deposition. Springer Netherlands, 2003. http://dx.doi.org/10.1007/978-94-017-0369-7_8.

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Yagüe, Jose L. "CVD Fluoropolymers." In CVD Polymers. Wiley-VCH Verlag GmbH & Co. KGaA, 2015. http://dx.doi.org/10.1002/9783527690275.ch10.

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Aardahl, C. L., and J. W. Rogers. "Aerosol CVD." In Inorganic Reactions and Methods. John Wiley & Sons, Inc., 2007. http://dx.doi.org/10.1002/9780470145333.ch56.

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Gleason, Karen K. "Overview of Chemically Vapor Deposited (CVD) Polymers." In CVD Polymers. Wiley-VCH Verlag GmbH & Co. KGaA, 2015. http://dx.doi.org/10.1002/9783527690275.ch1.

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Conference papers on the topic "Cvd"

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Oksuz, L., S. Cetebozan, A. Oz, and A. Oksuz. "Production and characterization of CNT and CNW with T-CVD and HF-CVD and PECVD methods." In 2024 IEEE International Conference on Plasma Science (ICOPS). IEEE, 2024. http://dx.doi.org/10.1109/icops58192.2024.10627210.

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Kawasaki, H., M. Gall, D. Jawarani, R. Hernandez, and C. Capasso. "Comparison of via electromigration for Cu, CVD-Al, and CVD-W." In STRESS INDUCED PHENOMENA IN METALLIZATION. ASCE, 1998. http://dx.doi.org/10.1063/1.54646.

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NAKANO, Masayuki, Hideaki KAWAMOTO, Akiyoshi NAGATA, Masataka HIROSE, and Yasuhiro HORIIKE. "Digital CVD of SiO2." In 1989 Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1989. http://dx.doi.org/10.7567/ssdm.1989.a-3-2.

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Weimer, Wayne A., and Curtis E. Johnson. "Diamond CVD growth chemistry." In San Diego '92, edited by Albert Feldman and Sandor Holly. SPIE, 1992. http://dx.doi.org/10.1117/12.130776.

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Fuchs, Baruch A., and Norman J. Brown. "Polishing CVD Silicon Carbide*." In Optical Fabrication and Testing. Optica Publishing Group, 1986. http://dx.doi.org/10.1364/oft.1986.wb7.

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Silicon carbide has a combination of properties that place it high on the list of candidates for sychrotron radiation grazing incidence reflectors. The chemical vapor deposited form has a very fine structure that permits the polisher to obtain very smooth surfaces. 5 cm diameter flats have been polished to about 1 Å rms in the 5 to 400 cycles per milimeter spatial frequency range.

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Lee, H., H. E. Meissner, and O. R. Meissner. "Adhesive-free bond (AFB) CVD diamond/sapphire and CVD diamond/YAG crystal composites." In Defense and Security Symposium, edited by Gary L. Wood and Mark A. Dubinskii. SPIE, 2006. http://dx.doi.org/10.1117/12.665794.

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Vinokurov, Pavel V., Aizhan A. Semenova, Evdokiya I. Popova, Vasiliy A. Yakovlev, and Svetlana A. Smagulova. "Investigation of multilayer MoS2 film grown by CVD method on transferred CVD graphene." In 9TH INTERNATIONAL CONFERENCE ON MATHEMATICAL MODELING: Dedicated to the 75th Anniversary of Professor V.N. Vragov. AIP Publishing, 2021. http://dx.doi.org/10.1063/5.0042148.

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Klein, Claude A. "Bimodal Weibull statistical analysis of CVD-ZnSe and CVD-ZnS flexural strength data." In SPIE Defense, Security, and Sensing, edited by Randal W. Tustison. SPIE, 2011. http://dx.doi.org/10.1117/12.883019.

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Mathews, V. K., G. S. Sandhu, N. Sandler, and P. C. Fazan. "Electrical Characterization of RTN-Poly-Si/CVD-Ta2O5/CVD-TiN Stacked DRAM Capacitors." In 1993 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1993. http://dx.doi.org/10.7567/ssdm.1993.s-iv-3.

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Avram, Andrei, Avram Marioara, Vasilica Tucureanu, et al. "Spectroscopic investigation of CVD graphene." In Advanced Topics in Optoelectronics, Microelectronics and Nanotechnologies IX, edited by Ionica Cristea, Marian Vladescu, and Razvan D. Tamas. SPIE, 2018. http://dx.doi.org/10.1117/12.2323590.

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Reports on the topic "Cvd"

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Checchin, Mattia. Versatile CVD/ALD system. Office of Scientific and Technical Information (OSTI), 2020. http://dx.doi.org/10.2172/1615354.

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IBIS ASSOCIATES INC WELLESLEY MA. CVD Diamond Cost Analysis Update. Defense Technical Information Center, 1994. http://dx.doi.org/10.21236/ada289990.

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Adams, J. W., R. E. Barletta, J. Svandrlik, and P. E. Vanier. Performance of CVD and CVR coated carbon-carbon in high temperature hydrogen. Office of Scientific and Technical Information (OSTI), 1993. http://dx.doi.org/10.2172/10116346.

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เครืองาม, ดุสิต, та สมศักดิ์ ปัญญาแก้ว. ไดโอดเปล่งแสงแบบฟิล์มบางชนิดวัสดุอะมอร์ฟัสสารกึ่งตัวนำ : รายงานการวิจัยฉบับสมบูรณ์ ระยะที่ 1. จุฬาลงกรณ์มหาวิทยาลัย, 1993. http://dx.doi.org/10.58837/chula.res.1993.1.

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ได้มีการคิดค้นออกแบบและประดิษฐ์สิ่งประดิษฐ์ไดโอดเปล่งแสงแบบฟิล์มบางจากวัสดุอะมอร์ฟัสซิลิกอนไนไตรด์และอะมอร์ฟัสซิลิกอนคาร์ไบด์ได้สำเร็จเป็นครั้งแรกในโลกด้วยวิธี glow discharge plasma CVD ไดโอดเปล่งแสงแบบฟิล์มบางนี้สามารถเปล่งแสงที่ตามองเห็นได้ตั้งแต่สีแดง สีส้ม สีเหลือง สีเขียว ไปจนถึงสีน้ำเงินขาว นับเว่าเป็นไดโอดเปล่งแสงชนิดเดียวในโลกที่สามารถเปล่งแสงสีหลักต่างๆ ได้ครบ จากวัสดุเพียงตระกูลเดียวกัน ไดโอดเปล่งแสงแบบฟิล์มบางที่พัฒนาขึ้นสำเร็จในงานวิจัยนี้มีลักษณะเป็นฟิล์มบางของวัสดุอะมอร์ฟัสซิลิกอนไนไตรด์และซิลิกอนคาร์ไบด์ที่เคลือบเป็นฟิล์มบาง ๆ บนแผ่นกระจกในลักษณะรอยต่อ p-i-n กล่าวคือ มีโครงสร้างแผ่นกระจก/ขั้วไฟฟ้าโปร่งแสง/อะมอร์ฟัสซิลิกอนคาร์ไบด์ชนิดพี/อะมอร์ฟัสซิลิกอนไนไตรด์ชนิดบริสุทธิ์/อะมอร์ฟัสซิลิกอนคาร์ไบด์ชนิดเอ็น/ขั้วไฟฟ้าอะลูมิเนียม ความหนาของฟิล์มบางชั้นต่างๆ บนแผ่นกระจากมีค่ารวมกันไม่เกิน 1 ไมครอน ไดโอดเปล่งแสงแบบฟิล์มบางนี้เปล่งแสงได้ด้วยหลักการของการฉีดกระแสไฟฟ้า กล่าวคือ ฉีดโฮลจากชั้นพีและอิเล็กตรอนจากชั้นเอ็นให้เข้าไปรวมตัวกันในชั้นอะมอร์ฟัสซิลิกอนไนไตรด์ชนิดบริสุทธิ์ซึ่งเป็นชั้นเปล่งแสง แรงดันไฟฟ้าที่ใช้ไบแอสเพื่อฉีดกระแสไฟฟ้ามีค่า ประมาณ 5-15 โวลท์ ความสว่างสูงสุดของแสงที่เปล่งมีค่าอยู่ในช่วง 0.1~1 cd/m[square] โดยใช้กระแสไฟฟ้าประมาณ 100-1000 mA/cm[square] สีของการเปล่งแสงกำหนดจากขนาดช่องว่างพลังงานของชั้นอะมอร์ฟัสซิลิกอนไนไตรด์ และช่องว่างพลังงานของชั้นอะมอร์ฟัสซิลิกอนไนไตรด์กำหนดได้จากอัตราส่วนของก๊ซ NH[subscript3]/SiH[subscript4]ที่ใช้ในขณะฟิล์ม ไดโอดเปล่งแสงแบบฟิล์มบางชนิดอะมอร์ฟัสสารกึ่งตัวนำนี้จัดว่าเป็นสิ่งประดิษฐ์อิเล็กทรอนิกส์ชนิดใหม่ที่เกิดขึ้นในโลก ทั้งนี้เพราะว่าไดโอดเปล่งแสงที่มีการผลิตอยู่ในปัจจุบันนั้นทำจากวัสดุผลึกเดี่ยวที่เป็น bulk ทั้งหมด ส่วนในงานวิจัยนี้ใช้วัสดุอะมอร์ฟัสทั้งหมด และเป็นการช่วยขยายการประยุกต์ใช้งานวัสดุอะมอร์ฟัสสารกึ่งตัวนำด้วย ไดโอดเปล่งแสงแบบฟิล์มบางชนิดอะมอร์ฟัสสารกึ่งตัวนำนี้สามารถเปล่งแสงจากพื้นราบ (surface emission) ได้ จึงมีศักยภาพที่จะนำไปผลิตเป็นจอภาพดิสเพลย์แบบบางเรียบ 9flat panel display) หรือจอโทรทัศน์แบบบางเรียบ (flat-panel TV) ได้ ดังนั้นผลงานวิจัยการคิดค้นในงานวิจัยนี้จึงมีเนื้อหาทั้งทางวิชาการที่ลึกซึ้งและมีศักยภาพสูง ในการประยุกต์ผลิตเป็นภาคอุตสาหกรรม ข้อดีเด่นของไดโอดเปล่งแสงแบบฟิล์มบางชนิดอะมอร์ฟัสสารกึ่งตัวนำนี้ ได้แก่ 1) ต้นทุนการผลิตต่ำเพราะใช้วัสดุราคาถูกและผลิตด้วยวิธี CVD ที่อุณหภูมิเพียง 200 องศาเซลเซียส 2) ผลิตเป็นฟิล์มยางพื้นใหญ่ๆ ได้ง่าย ทำให้ได้ดิสเพลย์ขนาดใหญ่ 3) ผลิตบนแผ่นฐานวัสดุชนิดต่าง ๆ ได้เช่น แผ่นกระจก แผ่นโลหะ แผ่นพลาสติก แผ่นเซรามิก ทำให้ได้ดิสเพลย์รูปร่างและการใช้งานหลากหลาย เป็นต้น ในงานวิจัยนี้ได้ดำเนินการวิจัยตั้งแต่การติดตั้งเครื่องมือ CVD สำหรับปลูกฟิล์มอะมอร์ฟัสซิลิกอนไนไตรด์ (a-Sin:H) และซิลิกอนคาร์ไบด์ (a-SiC:H) ซึ่งใช้ก๊าซ Sih[subscript4], NH[subscript3], CH[subscript4] เป็นก๊าซดิบ ได้มีการศึกษาคุณสมบัติพื้นฐานของ a-SiN:H และ a-SiC:H อย่างละเอียดทั้งทางโครงสร้าง (IR, ESCA, ESR) ทางแสง (ช่องว่างพลังงาน, โฟโตลูมิเนสเซนซ์) และแนวทางไฟฟ้า (สภาพนำไฟฟ้า) ของ a-SiN:H และ a-SiC:H อย่างเป็นระบบ สิ่งประดิษฐ์ไดโอดเล่งแสงแบบฟิล์มบางที่ประดิษฐ์ได้ ได้นำไปศึกษาวิเคราะห์กลไกการฉีดพาหะ และกลไกการเปล่งแสงอย่างละเอียด ได้ข้อมูลที่เป็นประโยชน์และสำคัญมากมาย ผลการวิเคราะห์พบว่า การฉีดพาหะได้อาศัยกลไก tunneling เป็นหลักและการเปล่งแสงเกิดจากการรวมตัวอิเล็กตรอนและโฮลที่ระดับ localized states นอกจากนี้ยังได้ประสบความสำเร็จในการประดิษฐ์ให้เปล่งแสงเป็นรูปร่างลักษณะต่างๆ ซึ่งเป็นการพิสูจน์ว่าไดโอดเปล่งแบบฟิล์มบางนี้สามารถผลิตเป็นดิสเพลย์แบบบางเรียบได้จริงได้สำเร็จ และได้การวิจารณ์การนำไดโอดเปล่งแสงแบบฟิล์มบางนี้ไปใช้งานใน optical computer และ optoelectronic IC ชนิดต่าง ๆ

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Hollaway, J. Design Parameters for CVD Shrapnel Tiles. Office of Scientific and Technical Information (OSTI), 2004. http://dx.doi.org/10.2172/15013932.

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Plano, Linda S., Ian Hayward, and John Wegand. CVD Diamond Films for Tribological Applications. Defense Technical Information Center, 1990. http://dx.doi.org/10.21236/ada220265.

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Ruamtawee, Witchakorn, Mathuros Tipayamongkholgul, Natnaree Aimyong, and Weerawat Manosuthi. Prevalence and Risk Factors of Cardiovascular Disease among People Living with HIV in the Asia-Pacific Region: a systematic review. INPLASY - International Platform of Registered Systematic Review and Meta-analysis Protocols, 2022. http://dx.doi.org/10.37766/inplasy2022.9.0108.

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Review question / Objective: This systematic review was conducted to address the situation and associated factors both traditional and HIV-specific for CVD among adult people living with HIV who were aged ≥ 18 years in the Asia Pacific region, and focused only on the counties with the greatest impact of CVD attributable to HIV infection including Bhutan, Cambodia, Indonesia, Malaysia, Myanmar, Papua New Guinea, Solomon Islands, and Thailand in the HAART era since 2005. Information sources: This systematic review was performed in an attempt to retrieve epidemiological studies of CVD among PLHIV in the greatest impact of CVD attributable to HIV countries in the Asia Pacific region from the following sources: • MEDLINE via PubMed (https://www.ncbi.nlm.nih.gov/pubmed) • Embase (https://www.embase.com) • the Cochrane Database of Systematic Reviews (https://www.cochranelibrary.com).

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Starr, T. L. Modeling for CVD of Solid Oxide Electrolyte. Office of Scientific and Technical Information (OSTI), 2002. http://dx.doi.org/10.2172/885565.

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PHILIPP, B. L. Cold Vacuum Drying (CVD) Set Point Determination. Office of Scientific and Technical Information (OSTI), 2000. http://dx.doi.org/10.2172/804794.

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SINGH, G. CVD facility electrical system captor/dapper study. Office of Scientific and Technical Information (OSTI), 1999. http://dx.doi.org/10.2172/798139.

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